A method for manufacturing a semiconductor structure is provided. The method includes the following operations. A first semiconductor substrate is provided on a spin chuck. A first humidity factor near the first semiconductor substrate is obtained. A resist material is dispensed on the first semiconductor substrate. The spin chuck is rotated at a first speed. The first speed is determined based on the first humidity factor.
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1. A method for manufacturing a semiconductor structure, comprising:
providing a first semiconductor substrate on a spin chuck;
obtaining a first humidity factor near the first semiconductor substrate, comprising:
sensing a plurality of humidity information; and
determining the first humidity factor based on the plurality of humidity information;
dispensing a first resist material on the first semiconductor substrate; and
rotating the spin chuck at a first speed, wherein the first speed is determined based on the first humidity factor.
16. A method for manufacturing a semiconductor structure, comprising:
providing a semiconductor substrate on a spin chuck;
dispensing photoresist over the semiconductor substrate;
determining a base speed, wherein the base speed is dependent on a viscosity of the photoresist;
obtaining a first humidity factor over a center area of the semiconductor substrate;
obtaining a second humidity factor over a peripheral area of the semiconductor substrate;
determining a modification speed according to the first and second humidity factor; and
rotating the spin chuck at a first speed, wherein the first speed is a summation of the base speed and the modification speed.
12. A method for manufacturing a semiconductor structure, comprising:
providing a semiconductor substrate on a spin chuck;
dispensing a resist material on the semiconductor substrate;
obtaining a humidity factor, comprising:
sensing a first humidity information at a first position near the semiconductor substrate;
sensing a second humidity information at a second position near the semiconductor substrate, wherein the second position is different from the first position; and
determining the humidity factor according to the first humidity information and the second humidity information;
determining a base speed;
determining a modification speed according to the humidity factor; and
rotating the spin chuck at a first speed, wherein the first speed is a summation of the base speed and the modification speed.
2. The method of
removing the first semiconductor substrate from the spin chuck;
providing a second semiconductor substrate on the spin chuck; and
obtaining a second humidity factor near the second semiconductor substrate.
3. The method of
reducing the first speed to a second speed when the second humidity factor is a negative value.
4. The method of
increasing the first speed to a second speed when the second humidity factor is a positive value.
5. The method of
obtaining a second humidity factor near the first semiconductor substrate;
dispensing a second resist material on the first semiconductor substrate; and
rotating the spin chuck at a second speed, wherein the second speed is determined based on the second humidity factor.
6. The method of
7. The method of
obtaining an average data of the plurality of humidity information.
8. The method of
rotating the spin chuck at a base speed; and
changing the base speed to the first speed.
9. The method of
10. The method of
obtaining a material parameter of the resist material; and
providing a base speed prior to determining the first speed.
11. The method of
dispensing a second resist material on the first semiconductor substrate; and
rotating the spin chuck for a rotating duration, wherein the rotating duration is determined based on a second humidity factor near the second semiconductor substrate.
13. The method of
obtaining a material parameter of the resist material; and
determining the modification speed according to the humidity factor and the material parameter.
14. The method of
17. The method of
18. The method of
19. The method of
20. The method of
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This application claims the benefit of prior-filed provisional application No. 62/711,045, filed on Jul. 27, 2018.
Lithography generally refers to processes for transferring one or more patterns between various media. In lithography, a light-sensitive resist coating is formed over one or more layers to which a pattern is to be transferred. The resist coating is then patterned by exposing it to one or more types of radiation or light that (selectively) passes through an intervening mask containing the pattern. The light causes exposed or unexposed portions of the resist coating to become more or less soluble, depending on the type of resist used (positive or negative). A developer is then used to remove the more soluble areas, leaving the patterned resist in place. The patterned resist can then serve as a template for the underlying layer or layers, which can be selectively etched (or doped or otherwise treated). Once the underlying layer is treated, the patterned resist is removed, for example by being chemically stripped, thus leaving in place the treated layer having the pattern formed therein.
Aspects of the present disclosure are best understood from the following detailed description when read with the accompanying figures. It should be noted that, in accordance with the standard practice in the industry, various features are not drawn to scale. In fact, the dimensions of the various features may be arbitrarily increased or reduced for clarity of discussion.
The following disclosure provides many different embodiments, or examples, for implementing different features of the provided subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. These are, of course, merely examples and are not intended to be limiting. For example, the formation of a first feature over or on a second feature in the description that follows may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features may be formed between the first and second features, such that the first and second features may not be in direct contact. In addition, the present disclosure may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed.
Embodiments of the present disclosure are discussed in detail below. It should be appreciated, however, that the present disclosure provides many applicable inventive concepts that can be embodied in a wide variety of specific contexts. The specific embodiments discussed are merely illustrative and do not limit the scope of the disclosure.
Further, spatially relative terms, such as “beneath,” “below,” “lower,” “above,” “upper” and the like, may be used herein for ease of description to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures. The spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The apparatus may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein may likewise be interpreted accordingly.
The humidity level near the semiconductor substrate may affect the fluidity of the resist material. The thickness of the resist layer formed on the semiconductor substrate with the spin chuck rotating at the base speed may fluctuate because of the humidity variation. In some embodiments of the present disclosure, the rotation speed may be modified according to the humidity factor. Thus, the rotation speed may be increased or decreased according to the humidity level near the semiconductor substrate, and the fluctuation in the thickness of the resist layer formed on the semiconductor substrate may be alleviated.
The spin chuck 102 is configured to support a semiconductor substrate 200. The spin chuck 102 is a rotatable platform situated inside the cup 108. The spin chuck 102 may be a vacuum chuck, with vacuum applied from the platform for holding the semiconductor substrate 200. During the manufacturing operations, the bottom surface of the semiconductor substrate 200 contacts the spin chuck 102. A suitable vacuum is then applied to the bottom surface of the semiconductor substrate 200 such that the semiconductor substrate 200 is held securely on the spin chuck 102 even at high rotation speeds. The rotating motion of the spin chuck 102 is achieved by a shaft 112, which is connected to the spin chuck 102 and powered by a motor 114.
The dispensing unit 104 is situated over the spin chuck 102 for dispensing a resist material 110 onto the semiconductor substrate 200. The resist material 110 with corresponding viscosity is dispensed on top of the semiconductor substrate 200.
The humidity sensor 106 is configured to sense a humidity information H near the semiconductor substrate 200. In some embodiments, the humidity sensor 106 is attached to the cup 108. In some other embodiments, the humidity sensor 106 is disposed around the dispensing unit 104. In some embodiments, a plurality of the humidity sensors 106 can be disposed near the semiconductor substrate 200, attached to the cup 108, and/or disposed at the dispensing unit 104. In some embodiments, the plurality of the humidity sensors 106 can be placed at several locations of the apparatus 100 in order to obtain a humidity value with representative meaning. In other embodiments, the humidity sensor 106 may be attached to other predetermined positions near the semiconductor substrate 200. The attached position of the humidity sensor 106 is not intended to be limiting.
Referring to
ω1=ω+Δω=ω+(γ*ΔH) (1)
where ω is a base speed, and γ is a positive constant.
In some embodiments, γ may be related to a material parameter of the resist material 110.
Referring to
In some embodiments, when the humidity factor ΔH is a positive value, the currently-measured humidity level at the location close to the semiconductor substrate 200 is higher than the previously-measured humidity level, the modification speed Δω is a positive value, and the first speed ω1 is accordingly greater than the base speed ω.
In other embodiments, when the humidity factor ΔH is a negative value, the currently-measured humidity level at the location close to the semiconductor substrate 200 is lower than the previously-measured humidity level, the modification speed Δω is a negative value, and the first speed ω1 is accordingly less than the base speed ω.
In one or more embodiments, the spin chuck 102 may initially rotate at the base speed ω, and the controller may subsequently change the rotation speed of the spin chuck 102 to the first speed ω1 according to the humidity factor ΔH.
When the dispensing of the resist material 110 is completed, a resist layer 111 is formed over the semiconductor substrate 200, and the resist layer 111 is subsequently exposed to a light source (not shown) to form a pattern.
The humidity level near the semiconductor substrate 200 may affect the fluidity of the resist material 110. The thickness of the resist layer 111 formed on the semiconductor substrate 200 with the spin chuck 102 rotating at the base speed ω may fluctuate because of variations in humidity. In some embodiments of the present disclosure, the rotation speed (e.g., the first speed ω1) may be modified according to the humidity factor ΔH. Thus, the rotation speed may be increased or decreased according to the humidity level near the semiconductor substrate 200, and the fluctuation in the thickness of the resist layer 111 formed on the semiconductor substrate 200 may be alleviated.
ω1=ω+Δω=ω+(γ*ΔH1) (2)
Referring to
ω2=ω+Δω=ω+(γ*ΔH2) (3)
It should be noted that, depending on the setting, during the determining of the second speed ω2, the base speed ω in equation (3) may use the predetermined speed or the first speed ω1.
For example, if the first speed ω1 is used as the base speed ω in equation (3), the second speed ω2 may be greater than the first speed ω1 when the second humidity factor ΔH2 is a positive value (i.e., the humidity level is increased). The controller 116 may increase the first speed ω1 to the second speed ω2. In other embodiments, the second speed ω2 may be less than the first speed ω1 when the second humidity factor ΔH2 is a negative value (i.e., the humidity level is decreased). The controller 116 may reduce the first speed ω1 to the second speed ω2.
In some embodiments, if the predetermined speed is used as the base speed ω in equation (3), the second speed ω2 may be greater than the predetermined speed and the first speed ω1 when the second humidity factor ΔH2 is a positive value (i.e., the second humidity information H2 is increased from the first humidity information H1. The controller 116 may increase the first speed ω1 to the second speed ω2.
In other embodiments, the second humidity factor ΔH2 may be still a positive value (i.e., the ambient humidity information is used as prior measured humidity information and the second humidity information H2 is increased from the ambient humidity information but lower than the first humidity information H1). The second speed ω2 may be greater than the predetermined speed but lower than the first speed ω1. The controller 116 decreases the first speed ω1 to the second speed ω2.
In other embodiments, the second speed ω2 may be less than the first speed ω1 and the predetermined speed when the second humidity factor ΔH2 is a negative value (i.e., the second humidity information H2 is decreased from the first humidity information H1 or the ambient humidity information). The controller 116 may reduce the first speed ω1 to the second speed ω2.
As described above, the humidity level near the semiconductor substrate 200 may affect the fluidity of the resist materials 110 and 120. The thickness of the resist layers 111 and 121 formed on the semiconductor substrate 200 with the spin chuck 102 rotating at the base speed ω may fluctuate because of variations in humidity. In some embodiments of the present disclosure, the rotation speed may be modified according to the humidity factors ΔH1 and ΔH2. Thus, the rotation speed may be increased or decreased according to the humidity level, and the fluctuation in the thickness of the resist layers 111 and 121 formed on the semiconductor substrate 200 may be alleviated.
Referring to
It should be noted that, depending on the setting, during the determining of the second speed ω2, the base speed ω in equation (3) may use the predetermined speed or the first speed ω1.
For example, if the first speed ω1 is used as the base speed ω1 in equation (3), the second speed ω2, may be greater than the first speed ω1 when the second humidity factor ΔH2 is a positive value (i.e., the humidity level is increased). The controller 116 may increase the first speed ω1 to the second speed ω2. In other embodiments, the second speed ω2 may be less than the first speed ω1 when the second humidity factor ΔH2 is a negative value (i.e., the humidity level is decreased). The controller 116 may reduce the first speed ω1 to the second speed ω2.
In some embodiments, if the predetermined speed is used as the base speed ω in equation (3), the second speed ω2 may be greater than the predetermined speed and the first speed ω1 when the second humidity factor ΔH2 is a positive value (i.e., the second humidity information H2 is increased from the first humidity information H1). The controller 116 may increase the first speed ω1 to the second speed ω2.
In other embodiments, the second humidity factor ΔH2 may be still a positive value (i.e., the ambient humidity information is used as prior measured humidity information and the second humidity information H2 is increased from the ambient humidity information but lower than the first humidity information H1). The second speed ω2 may be greater than the predetermined speed but lower than the first speed ω1. The controller 116 decreases the first speed ω1 to the second speed ω1.
In other embodiments, the second speed ω2 may be less than the first speed ω1 and the predetermined speed when the second humidity factor ΔH2 is a negative value (i.e., the second humidity information H2 is decreased from the first humidity information H1 or the ambient humidity information). The controller 116 may reduce the first speed ω1 to the second speed ω2.
It should be noted that the semiconductor substrates 200 and 210 may receive multiple resist materials dispensed thereon, as described in
As described above, the humidity level near the semiconductor substrates 200 and 210 may affect the fluidity of the resist material 110. The thickness of the resist layer 111 formed on the semiconductor substrates 200 and 210 with the spin chuck 102 rotating at the base speed ω may fluctuate because of variations in humidity. In some embodiments of the present disclosure, the rotation speed may be modified according to the humidity factors ΔH1 and ΔH2. Thus, the rotation speed may be increased or decreased according to the humidity level, and the fluctuation in the thickness of the resist layer formed on the semiconductor substrates 200 and 210 may be alleviated. In some embodiments, a rotating duration at a given rotating speed may be optionally determined based on the given rotating speed, the modification speed Δω, or the humidity level. For example, a rotating duration of the semiconductor substrates 200 at the second speed ω2 may be positively correlated to the second speed ω2, the modification speed Δω (i.e., difference between the second speed ω2 and the first speed ω1), or the second humidity factor ΔH2. In some embodiments, a rotating duration may be increased when a rotation speed of the semiconductor substrates 200 is increase from the first speed ω1 to the second speed ω2. In some embodiments, the rotating duration may be increased when the modification speed Δω is positive. In some embodiments, the rotating duration may be increased when the humidity factor (e.g., ΔH1 or ΔH2) is positive (e.g., the second humidity information shows greater humidity than the first humidity information). In some embodiments, the rotating duration may be increased in response to the positive modification speed Δω or the positive humidity factor while keeping the rotation speed at constant.
In some embodiments, photoresist with an original thickness under a standard humidity level may subsequently turn into a greater thickness when the humidity level increases from the standard humidity level, and similarly, turn into a smaller thickness when the humidity level decreases from the standard humidity level. Therefore, when the humidity level increases, a longer rotating duration and/or a faster rotating speed shall be applied in order to obtain the desired photoresist thickness. In contrast, when the humidity level decreases, a shorter rotating duration and/or a slower rotating speed shall be applied in order to obtain the desired photoresist thickness.
As such, the accuracy of the humidity factor ΔH may be increased, the rotation speed may be precisely controlled, and the fluctuation in the thickness of the resist layer formed on the semiconductor substrate 200 may be alleviated.
It should be noted that the apparatuses 500 and 600 in
In operation 804, a resist material is dispensed on the semiconductor substrate. In operation 806, a humidity factor near the semiconductor substrate is obtained. In operation 808, a base speed is determined. In operation 810, a modification speed according to the humidity factor is determined. In operation 812, the spin chuck is rotated at a first speed. The first speed is a summation of the base speed and the modification speed. The operations are similar to the operations described in accordance with
In summary, the humidity level near the semiconductor substrate may affect the fluidity of the resist material. The thickness of the resist layer formed on the semiconductor substrate with the spin chuck rotating at the base speed may fluctuate because of the humidity variation. In some embodiments of the present disclosure, the rotation speed may be modified according to the humidity factor. Thus, the rotation speed may be increased or decreased according to the humidity level near the semiconductor substrate, and the fluctuation in the thickness of the resist layer formed on the semiconductor substrate may be alleviated.
According to some embodiments, a method for manufacturing a semiconductor structure is provided. The method includes the following operations. A first semiconductor substrate is provided on a spin chuck. A first humidity factor near the first semiconductor substrate is obtained. A resist material is dispensed on the first semiconductor substrate. The spin chuck is rotated at a first speed. The first speed is determined based on the first humidity factor.
According to other embodiments, a method for manufacturing a semiconductor structure is provided. The method includes the following operations. A semiconductor substrate is provided on a spin chuck. A resist material is dispensed on the semiconductor substrate. A humidity factor near the semiconductor substrate is obtained. A base speed is determined. A modification speed is determined according to the humidity factor. The spin chuck is rotated at a first speed. The first speed is a summation of the base speed and the modification speed.
According to other embodiments, an apparatus for manufacturing a semiconductor structure is provided. The apparatus includes a spin chuck, a dispensing unit and a humidity sensor. The spin chuck is configured to support a semiconductor substrate and rotate at a first speed. The dispensing unit is configured to dispense a resist material onto the semiconductor substrate. The humidity sensor is configured to sense a humidity information near the semiconductor substrate.
The foregoing outlines features of several embodiments so that those skilled in the art may better understand the aspects of the present disclosure. Those skilled in the art should appreciate that they may readily use the present disclosure as a basis for designing or modifying other processes and structures for carrying out the same purposes and/or achieving the same advantages of the embodiments introduced herein. Those skilled in the art should also realize that such equivalent constructions do not depart from the spirit and scope of the present disclosure, and that they may make various changes, substitutions and alterations herein without departing from the spirit and scope of the present disclosure.
Lee, Yung-Yao, Tseng, Wei-Hsiang
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