According to one embodiment, an electromagnetic wave attenuator includes a multilayer member, and a magnetic member. The multilayer member includes a plurality of magnetic layers and a plurality of nonmagnetic layers. The plurality of nonmagnetic layers is conductive. A direction from one of the plurality of magnetic layers toward an other one of the plurality of magnetic layers is aligned with a first direction from the multilayer member toward the magnetic member. One of the plurality of nonmagnetic layers is between the one of the plurality of magnetic layers and the other one of the plurality of magnetic layers. A thickness along the first direction of the magnetic member is not less than ½ of a thickness along the first direction of the multilayer member.
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1. An electromagnetic wave attenuator, comprising:
a multilayer member; and
a magnetic member,
the multilayer member including a plurality of magnetic layers and a plurality of nonmagnetic layers, the plurality of nonmagnetic layers being conductive,
a direction from one of the plurality of magnetic layers toward an other one of the plurality of magnetic layers being aligned with a first direction from the multilayer member toward the magnetic member,
one of the plurality of nonmagnetic layers being between the one of the plurality of magnetic layers and the other one of the plurality of magnetic layers,
a thickness along the first direction of the magnetic member being not less than ½ of a thickness along the first direction of the multilayer member,
wherein the magnetic member directly contacts the multilayer member.
2. The attenuator according to
3. The attenuator according to
4. The attenuator according to
5. The attenuator according to
6. The attenuator according to
the magnetic member includes a first member region and a second member region,
the first member region is between the second member region and the multilayer member in the first direction,
the first member region includes a plurality of first crystal grains,
the second member region includes a plurality of second crystal grains, and
an average value of sizes of the plurality of first crystal grains is less than an average value of sizes of the plurality of second crystal grains.
7. The attenuator according to
the magnetic member has a first member surface and a second member surface,
the first member surface is between the second member surface and the multilayer member in the first direction,
the first member surface includes a plurality of first crystal grains,
the second member surface includes a plurality of second crystal grains, and
an average value of sizes of the plurality of first crystal grains is less than an average value of sizes of the plurality of second crystal grains.
8. The attenuator according to
the one of the plurality of magnetic layers includes third crystal grains, and
an average value of sizes of the third crystal grains is 40 nm or less.
9. The attenuator according to
the one of the plurality of magnetic layers has a first magnetic layer surface opposing the one of the plurality of nonmagnetic layers,
the first magnetic layer surface includes a first top portion and a first bottom portion, and
a distance along the first direction between the first top portion and the first bottom portion is 10 nm or more.
10. The attenuator according to
the one of the plurality of magnetic layers has a first magnetic layer surface opposing the one of the plurality of nonmagnetic layers,
the first magnetic layer surface includes a first top portion, a second top portion, and a first bottom portion,
a position of the first bottom portion in a second direction is between a position of the first top portion in the second direction and a position of the second top portion in the second direction, the second direction crossing the first direction, and
at least a portion of the one of the plurality of nonmagnetic layers is between the first top portion and the second top portion in the second direction.
11. The attenuator according to
the one of the plurality of magnetic layers includes a plurality of magnetic films and a plurality of nonmagnetic films,
a direction from one of the plurality of magnetic films toward an other one of the plurality of magnetic films is aligned with the first direction,
one of the plurality of nonmagnetic films is between the one of the plurality of magnetic films and the other one of the plurality of magnetic films,
a thickness along the first direction of the one of the plurality of magnetic films is thicker than a thickness along the first direction of the one of the plurality of nonmagnetic films, and
the thickness along the first direction of the one of the plurality of nonmagnetic films is not less than 0.5 nm and not more than 7 nm.
12. The attenuator according to
13. The attenuator according to
14. The attenuator according to
15. The attenuator according to
16. The attenuator according to
at least a portion of the one of the plurality of magnetic layers includes Fe100_x1-x2αx1Nx2, and
α includes at least one selected from the group consisting of Zr, Hf, Ta, Nb, Ti, Si, and Al.
17. The attenuator according to
18. The attenuator according to
19. An electronic device, comprising:
the electromagnetic wave attenuator according to
an electronic element.
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This application is based upon and claims the benefit of priority from Japanese Patent Application No. 2019-012148, filed on Jan. 28, 2019; the entire contents of which are incorporated herein by reference.
Embodiments described herein relate generally to an electromagnetic wave attenuator and an electronic device.
For example, an electromagnetic wave attenuator such as an electromagnetic shield sheet or the like has been proposed. There is an electronic device that includes the electromagnetic wave attenuator and a semiconductor element. It is desirable to improve the attenuation characteristics for electromagnetic waves of the electromagnetic wave attenuator.
According to one embodiment, an electromagnetic wave attenuator includes a multilayer member, and a magnetic member. The multilayer member includes a plurality of magnetic layers and a plurality of nonmagnetic layers. The plurality of nonmagnetic layers is conductive. A direction from one of the plurality of magnetic layers toward an other one of the plurality of magnetic layers is aligned with a first direction from the multilayer member toward the magnetic member. One of the plurality of nonmagnetic layers is between the one of the plurality of magnetic layers and the other one of the plurality of magnetic layers. A thickness along the first direction of the magnetic member is not less than ½ of a thickness along the first direction of the multilayer member.
According to one embodiment, an electronic device includes the electromagnetic wave attenuator described above, and an electronic element.
Various embodiments are described below with reference to the accompanying drawings.
The drawings are schematic and conceptual; and the relationships between the thickness and width of portions, the proportions of sizes among portions, etc., are not necessarily the same as the actual values. The dimensions and proportions may be illustrated differently among drawings, even for identical portions.
In the specification and drawings, components similar to those described previously or illustrated in an antecedent drawing are marked with like reference numerals, and a detailed description is omitted as appropriate.
In
As shown in
The direction from the multilayer member 10M toward the magnetic member 15 is aligned with a first direction. The first direction is taken as a Z-axis direction. One direction perpendicular to the Z-axis direction is taken as an X-axis direction. A direction perpendicular to the Z-axis direction and the X-axis direction is taken as a Y-axis direction.
The multilayer member 10M includes multiple magnetic layers 11 and multiple conductive nonmagnetic layers 12. The direction from one of the multiple magnetic layers 11 toward an other one of the multiple magnetic layers 11 is aligned with the first direction (the Z-axis direction). One of the multiple nonmagnetic layers 12 is between the one of the multiple magnetic layers 11 recited above and the other one of the multiple magnetic layers 11 recited above.
For example, the multiple magnetic layers 11 and the multiple nonmagnetic layers 12 are provided alternately along the first direction. For example, the multiple magnetic layers 11 are arranged along the first direction. For example, the multiple nonmagnetic layers 12 are arranged along the first direction. One of the multiple magnetic layers 11 is between one of the multiple nonmagnetic layers 12 and an other one of the multiple nonmagnetic layers 12.
For example, at least a portion of the multiple magnetic layers 11 is parallel to the X-Y plane. For example, at least a portion of the multiple nonmagnetic layers 12 is parallel to the X-Y plane. For example, the magnetic member 15 is parallel to the X-Y plane.
As shown in
In one example according to the embodiment, the base body 10s is a mold resin, etc. In another example, the base body 10s may be a resin layer, etc. For example, the resin layer is provided on a plastic sheet. In the embodiment, the surface of the base body 10s may have an unevenness. In such a case, as described below, the multiple magnetic layers 11 and the multiple nonmagnetic layers 12 may have uneven configurations along the unevenness of the base body.
As shown in
As shown in
The thickness along the first direction of one of the multiple magnetic layers 11 is taken as a thickness t1. The thickness t1 is, for example, not less than 20 nm and not more than 500 nm.
The thickness along the first direction of one of the multiple nonmagnetic layers 12 is taken as a thickness t2. The thickness t2 is, for example, not less than 2 nm and not more than 500 nm.
The thickness along the first direction of the magnetic member 15 is taken as a thickness t5. The thickness t5 is thicker than the thickness t1. The thickness t5 is thicker than the thickness t2. The thickness t5 is, for example, 1 μm or more. The thickness t5 may be, for example, 1 μm or more. The thickness t5 may be, for example, 4 μm or more. The thickness t5 is, for example, not less than 5 times the thickness t1.
In the embodiment, for example, the thick magnetic member 15 is stacked on the multilayer member 10M which includes the thin magnetic layers and the thin nonmagnetic layers stacked alternately. For example, the thickness t5 along the first direction of the magnetic member 15 is not less than ½ of a thickness t0 along the first direction of the multilayer member 10M.
By such a configuration, it was found that attenuation characteristics exceed the level that is expected by adding the attenuation characteristics of the multilayer member 10M to that of the magnetic member 15.
Experimental results obtained by the inventor of the application will now be described. Samples SP01, SP02, SP03, SP04, and SP05 are fabricated in the experiment.
In the sample SP01, multiple sets of the magnetic layer 11 and the nonmagnetic layer 12 are provided. In one set, the magnetic layer 11 is a NiFeCuMo layer having a thickness (a first thickness t1) of 100 nm and the nonmagnetic layer 12 is a Cu layer having a thickness (a second thickness t2) of 100 nm. A number Ns of sets, that include one magnetic layer 11 and one nonmagnetic layer 12, is 10. The sample SP01 corresponds to the multilayer member 10M.
In the sample SP02, multiple sets of the magnetic layer 11 and the nonmagnetic layer 12 are provided. In one set, the magnetic layer 11 is a NiFeCuMo layer having a thickness (the first thickness t1) of 50 nm and the nonmagnetic layer 12 is a Ta layer having a thickness (the second thickness t2) of 5 nm. The number Ns of sets, that include one magnetic layer 11 and one nonmagnetic layer 12, is 37. The sample SP02 corresponds to the multilayer member 10M.
In the sample SP03, a NiFeCuMo layer having a thickness of 2 μm is provided. In the sample SP03, only the magnetic layer is provided. SP03 does not include a nonmagnetic layer. The sample SP03 corresponds to the magnetic member 15.
In the sample SP04, a magnetic member 15 (the NiFeCuMo layer having the thickness of 2 μm) that has the same configuration as the sample SP03 is further provided on the multilayer member 10M that has the same configuration as the sample SP01 recited above. The nonmagnetic layer 12 (the Cu layer having the thickness of 100 nm) that is included in the sample SP01 contacts the NiFeCuMo layer of the magnetic member 15.
In the sample SP05, the magnetic member 15 (the NiFeCuMo layer having the thickness of 2 μm) that has the same configuration as the sample SP03 is further provided on the multilayer member 10M that has the same configuration as the sample SP02 recited above. The nonmagnetic layer 12 (the Ta layer having the thickness of 5 nm) that is included in the sample SP02 contacts the NiFeCuMo layer of the magnetic member 15.
An electromagnetic wave 81 is incident on the samples and the amplitude of the transmitted electromagnetic wave 81 through these samples is measured.
In these figures, the vertical axis is a transmission characteristic T1 (dB) of the incident electromagnetic wave 81 with the frequency of 100 MHz. A low transmission characteristic T1 (the absolute value being large) corresponds to a large amount of the attenuation of the electromagnetic wave 81 incident on the electromagnetic wave attenuator. It is desirable for the transmission characteristic T1 to be low (for the absolute value to be large).
As shown in
In
As described above, the transmission characteristic T1 for the sample SP04 is −17.6 dB and is clearly lower (has a larger absolute value) than the expected value (calculation result CP13) of −16.2 dB.
As shown in
In
As described above, the transmission characteristic T1 for the sample SP05 is −8.3 dB and is clearly lower (has a larger absolute value) than the expected value (calculation result CP23) of −3.8 dB.
In the embodiment, the configurations of the samples SP04, SP05, etc., are employed. A low transmission characteristic T1 (having a large absolute value) is obtained thereby. According to the embodiment, an electromagnetic wave attenuator can be provided in which the attenuation characteristics for electromagnetic waves can be improved.
From the results shown in
As shown in
The magnetic member 15 is provided on such a multilayer member 10M with the third crystal grains gr3. Because the magnetic member 15 is thick, the sizes of the crystal grains in the magnetic member 15 increase with the thickness during the film deposition process of the magnetic member 15.
For example, the magnetic member 15 includes a first member region 15ra and a second member region 15rb. The first member region 15ra is between the second member region 15rb and the multilayer member 10M in the first direction (the Z-axis direction). The first member region 15ra is a region (a bottom region) on the multilayer member 10M side. The second member region 15rb is a region (an upper region) on the opposite side.
The first member region 15ra includes multiple first crystal grains gr1. The second member region 15rb includes multiple second crystal grains gr2. The average value of sizes d1 of the multiple first crystal grains gr1 is less than the average value of sizes d2 of the multiple second crystal grains gr2.
For example, the magnetic member 15 has a first member surface 15fa and a second member surface 15fb. The first member surface 15fa is between the second member surface 15fb and the multilayer member 10M in the first direction (the Z-axis direction). The first member surface 15fa includes the multiple first crystal grains gr1. The second member surface 15fb includes the multiple second crystal grains gr2. The average value of the sizes d1 of the multiple first crystal grains gr1 is less than the average value of the sizes d2 of the multiple second crystal grains gr2.
Since the magnetic member 15 is deposited on the multilayer member 10M including the thin magnetic layers 11, the size d3 of the third crystal grain gr3 included in the magnetic member 15 becomes small at the vicinity of the multilayer member 10M (e.g., at the first member region 15ra).
When the size d3 of the third crystal grain gr3 is small at the vicinity of the multilayer member 10M, the inter-layer magnetostatic interaction between the magnetic layer 11 and the third crystal grains gr3 seems to be large.
Generally, an exchange coupling interaction align the orientations of the spins inside a ferromagnetic material to some direction. In the magnetic material with a polycrystalline microstructure, the exchange coupling interaction becomes small or zero at the crystal grain boundary. Accordingly, the spins in a crystal grain precess in unison as substantially one spin unit when an alternating-current magnetic field is applied to the magnetic material with a polycrystalline microstructure. When the size of the crystal grain of the magnetic member 15 is small at the vicinity of the multilayer member 10M, the precession unit becomes small and responses the local magnetic field well. Then, for example, the magnetostatic interaction, etc., becomes stronger. Thereby, for example, the attenuation characteristics for electromagnetic waves may improve.
As shown in
For example, one of the multiple magnetic layers 11 has a first magnetic layer surface 11fa opposing one of the multiple nonmagnetic layers 12. The first magnetic layer surface 11fa includes a first top portion 11pp and a first bottom portion 11dp. A distance dz along the first direction (the Z-axis direction) between the first top portion 11pp and the first bottom portion 11dp is 10 nm or more. The distance dz corresponds to the height (the depth) of the unevenness. The distance dz may be 50 nm or more.
For example, the first magnetic layer surface 11fa includes the first top portion 11pp, a second top portion 11pq, and the first bottom portion 11dp. The position of the first bottom portion 11dp in a second direction De2 crossing the first direction (the Z-axis direction) is between the position of the first top portion 11pp in the second direction De2 and the position of the second top portion 11pq in the second direction De2. At least a portion of one of the multiple nonmagnetic layers 12 is between the first top portion 11pp and the second top portion 11pq in the second direction De2.
Because the magnetic layer 11 has such an unevenness, for example, a large magnetostatic interaction may be generated between a magnetization 11pm of the protrusion (the portion including the first top portion 11pp) and a magnetization 15pm of the magnetic member 15.
Because the size d1 of the crystal grain (e.g., the first crystal grain gr1) of the magnetic member 15 is small, the magnetostatic interaction between the magnetization 11pm and the magnetization 15pm may become larger.
Since such an large magnetostatic interaction occurs between the multilayer member 10M and the magnetic member 15, the low transmission characteristic T1 (having the large absolute value) is obtained for the sample SP04 and the sample SP05, as described in reference to
As shown in
The unique characteristics that are obtained when combining the multilayer member 10M and the magnetic member 15 (referring to
In the embodiment, it is favorable for the thickness t1 of the magnetic layer 11 to be sufficiently thin compared to the thickness t5 of the magnetic member 15. For example, the thickness t1 along the first direction of one of the multiple magnetic layers 11 is not more than ⅕ of the thickness t5 along the first direction of the magnetic member 15.
In the embodiment, it is favorable for the thickness t2 of the nonmagnetic layer 12 to be sufficiently thin compared to the thickness t5 of the magnetic member 15. For example, the thickness t2 along the first direction of one of the multiple nonmagnetic layers 12 is not more than ⅕ of the thickness t5 along the first direction of the magnetic member 15.
In
For example, some magnetic layers 11 may be deposited under a magnetic field. The multilayer member 10M with multiple magnetization easy axes as shown in
In the embodiment, the direction of the magnetizations such as those illustrated in
A thickness t3 along the first direction of one of the multiple magnetic films 11f is thicker than a thickness t4 along the first direction of one of the multiple nonmagnetic films 12f. The thickness t4 is, for example, not less than 0.5 nm and not more than 7 nm.
For example, the multiple nonmagnetic films 12f function as under layers. By forming one of the multiple magnetic films 11f on one of the multiple nonmagnetic films 12f, for example, good soft magnetic properties are obtained in the one of the multiple magnetic films 11f. For example, an appropriate magnetic domain or an appropriate domain wall region is formed in the multiple magnetic films 11f. For example, a high attenuation effect is obtained.
At least a portion of at least one of the multiple magnetic films 11f includes at least one selected from the group consisting of Co, Ni, and Fe. For example, one of the multiple magnetic films 11f is a soft magnetic film.
At least a portion of at least one of the multiple nonmagnetic films 12f includes at least one selected from the group consisting of Cu, Ta, Ti, W, Mo, Nb, and Hf. At least one of the multiple nonmagnetic films 12f is, for example, a Cu film.
At least a portion of at least one of the multiple magnetic layers 11 includes at least one selected from the group consisting of Co, Ni, and Fe. One of the multiple magnetic layers 11 is, for example, a soft magnetic layer. At least a portion of at least one of the multiple magnetic layers 11 may further include at least one selected from the group consisting of Cu and Mo.
At least a portion of at least one of the multiple magnetic layers 11 may include Fe100-x1-x2
At least a portion of at least one of the multiple magnetic layers 11 may include, for example, NiFe, CoFe, FeSi, FeZrN, FeCo, etc. At least a portion of at least one of the multiple magnetic layers 11 may include, for example, an amorphous alloy.
At least a portion of at least one of the multiple nonmagnetic layers 12 may include at least one selected from the group consisting of Cu, Al, Ni, Cr, Mn, Mo, Zr, and Si.
As shown in
In the example as shown in
The electronic element 50 includes, for example, at least one of an arithmetic circuit, a control circuit, a memory circuit, a switching circuit, a signal processing circuit, or a high frequency circuit.
The base body 10s of the electromagnetic wave attenuator 10 (referring to
In the example as illustrated in
As shown in
As shown in
As shown in
As shown in
By using the electromagnetic wave attenuator 10 described in reference to the first embodiment, for example, electromagnetic waves in the frequency range around 200 MHz or less can be attenuated effectively. An electronic device with improved attenuation characteristics for electromagnetic waves can be provided.
For example, the emission of the electromagnetic waves generated by the electronic element 50 can be suppressed. The electromagnetic waves from the outside to the electronic element 50 can be suppressed. Stable operations are obtained easily in the electronic element 50.
The planar portion 10p may be, for example, substantially a quadrilateral (including a parallelogram, a rectangle, or a square).
As shown in
As shown in
As shown in
As shown in
The magnetic layers 11 that are included in the first to fourth side surface portions 10a to 10d each may be continuous with the magnetic layer 11 included in the planar portion 10p. The nonmagnetic layers 12 that are included in the first to fourth side surface portions 10a to 10d each may be continuous with the nonmagnetic layer 12 included in the planar portion 10p.
Thus, the electronic device 110 according to the embodiment includes the electronic element 50 and the electromagnetic wave attenuator 10 according to the first embodiment. For example, the direction from the electronic element 50 toward the electromagnetic wave attenuator 10 is the first direction (the Z-axis direction).
For example, the electromagnetic wave attenuator 10 includes multiple regions (or multiple portions). At least a portion of the electronic element 50 is provided between the multiple regions. Multiple electromagnetic wave attenuators 10 may be provided. For example, the multiple electromagnetic wave attenuators 10 corresponds to the planar portion 10p and the first to fourth side surface portions 10a to 10d. For example, at least a portion of the electronic element 50 may be provided between the multiple electromagnetic wave attenuators 10.
As shown in
The electronic elements are provided between multiple regions of the electromagnetic wave attenuator 10. An insulating region (insulating portions 41 and 42, etc.) may be provided between the electronic element and one of the multiple regions of the electromagnetic wave attenuator 10. A resin portion (resin portions 511, 521, 531, etc.) may be provided between the electronic element and the insulating region (the insulating portions 41 and 42, etc.). A connection member (connection members 51N, 52N, 53N, etc.) may be provided for each of the multiple electronic elements. For example, the electronic element and the connector 58 may be electrically connected by the connection member.
As in an electronic device 112 shown in
As in an electronic device 113 shown in
As in an electronic device 114 shown in
As in an electronic device 115 shown in
As in an electronic device 116 shown in
According to the electronic devices 111 to 116 as well, an electronic device can be provided in which the attenuation characteristics for electromagnetic waves can be improved.
For example, the embodiments are applicable to an electronic device and an electromagnetic wave attenuator for EMC (ElectroMagnetic Compatibility).
The embodiments may include the following configurations (e.g., technological proposals).
Configuration 1
An electromagnetic wave attenuator, comprising:
a multilayer member; and
a magnetic member,
the multilayer member including a plurality of magnetic layers and a plurality of nonmagnetic layers, the plurality of nonmagnetic layers being conductive,
a direction from one of the plurality of magnetic layers toward an other one of the plurality of magnetic layers being aligned with a first direction from the multilayer member toward the magnetic member,
one of the plurality of nonmagnetic layers being between the one of the plurality of magnetic layers and the other one of the plurality of magnetic layers,
a thickness along the first direction of the magnetic member being not less than ½ of a thickness along the first direction of the multilayer member.
Configuration 2
The electromagnetic wave attenuator according to Configuration 1, wherein the magnetic member contacts the multilayer member.
Configuration 3
The electromagnetic wave attenuator according to Configuration 1 or 2, wherein an other one of the plurality of nonmagnetic layers contacts the magnetic member.
Configuration 4
The electromagnetic wave attenuator according to Configuration 1 or 2, wherein the one of the plurality of magnetic layers contacts the magnetic member.
Configuration 5
The electromagnetic wave attenuator according to any one of Configurations 1 to 4, wherein the thickness along the first direction of the magnetic member is not less than 5 times a thickness along the first direction of the one of the plurality of magnetic layers.
Configuration 6
The electromagnetic wave attenuator according to any one of Configurations 1 to 5, wherein a thickness along the first direction of the one of the plurality of nonmagnetic layers is not more than ⅕ of the thickness along the first direction of the magnetic member.
Configuration 7
The electromagnetic wave attenuator according to any one of Configurations 1 to 6, wherein
the magnetic member includes a first member region and a second member region,
the first member region is between the second member region and the multilayer member in the first direction,
the first member region includes a plurality of first crystal grains,
the second member region includes a plurality of second crystal grains, and
an average value of sizes of the plurality of first crystal grains is less than an average value of sizes of the plurality of second crystal grains.
Configuration 8
The electromagnetic wave attenuator according to any one of Configurations 1 to 6, wherein
the magnetic member has a first member surface and a second member surface,
the first member surface is between the second member surface and the multilayer member in the first direction,
the first member surface includes a plurality of first crystal grains,
the second member surface includes a plurality of second crystal grains, and
an average value of sizes of the plurality of first crystal grains is less than an average value of sizes of the plurality of second crystal grains.
Configuration 9
The electromagnetic wave attenuator according to any one of Configurations 1 to 8, wherein
the one of the plurality of magnetic layers includes third crystal grains, and
an average value of sizes of the third crystal grains is 40 nm or less.
Configuration 10
The electromagnetic wave attenuator according to any one of Configurations 1 to 9, wherein
the one of the plurality of magnetic layers has a first magnetic layer surface opposing the one of the plurality of nonmagnetic layers,
the first magnetic layer surface includes a first top portion and a first bottom portion, and
a distance along the first direction between the first top portion and the first bottom portion is 10 nm or more.
Configuration 11
The electromagnetic wave attenuator according to any one of Configurations 1 to 9, wherein
the one of the plurality of magnetic layers has a first magnetic layer surface opposing the one of the plurality of nonmagnetic layers,
the first magnetic layer surface includes a first top portion, a second top portion, and a first bottom portion,
a position of the first bottom portion in a second direction is between a position of the first top portion in the second direction and a position of the second top portion in the second direction, the second direction crossing the first direction, and
at least a portion of the one of the plurality of nonmagnetic layers is between the first top portion and the second top portion in the second direction.
Configuration 12
The electromagnetic wave attenuator according to any one of Configurations 1 to 5, wherein
the one of the plurality of magnetic layers includes a plurality of magnetic films and a plurality of nonmagnetic films,
a direction from one of the plurality of magnetic films toward an other one of the plurality of magnetic films is aligned with the first direction,
one of the plurality of nonmagnetic films is between the one of the plurality of magnetic films and the other one of the plurality of magnetic films,
a thickness along the first direction of the one of the plurality of magnetic films is thicker than a thickness along the first direction of the one of the plurality of nonmagnetic films, and
the thickness along the first direction of the one of the plurality of nonmagnetic films is not less than 0.5 nm and not more than 7 nm.
Configuration 13
The electromagnetic wave attenuator according to Configuration 12, wherein at least a portion of the at least one of the plurality of nonmagnetic films includes at least one selected from the group consisting of Cu, Ta, Ti, W, Mo, Nb, and Hf.
Configuration 14
The electromagnetic wave attenuator according to Configuration 12 or 13, wherein at least a portion of the at least one of the plurality of magnetic films includes at least one selected from the group consisting of Co, Ni, and Fe.
Configuration 15
The electromagnetic wave attenuator according to any one of Configurations 1 to 14, wherein at least a portion of the one of the plurality of magnetic layers includes at least one selected from the group consisting of Co, Ni, and Fe.
Configuration 16
The electromagnetic wave attenuator according to Configuration 15, wherein the at least a portion of the at least one of the plurality of magnetic layers further includes at least one selected from the group consisting of Cu and Mo.
Configuration 17
The electromagnetic wave attenuator according to any one of Configurations 1 to 14, wherein
at least a portion of the one of the plurality of magnetic layers includes Fe100-x1-x2
Configuration 18
The electromagnetic wave attenuator according to any one of Configurations 1 to 17, wherein at least a portion of the one of the plurality of nonmagnetic layers further includes at least one selected from the group consisting of Cu, Al, Ni, Cr, Mn, Mo, Zr, and Si.
Configuration 19
The electromagnetic wave attenuator according to any one of Configurations 1 to 18, wherein an orientation of a magnetization of at least a portion of the one of the plurality of magnetic layers crosses an orientation of a magnetization of at least a portion of the other one of the plurality of magnetic layers.
Configuration 20
An electronic device, comprising:
the electromagnetic wave attenuator according to any one of Configurations 1 to 19; and
an electronic element.
According to the embodiments, an electromagnetic wave attenuator and an electronic device can be provided in which the attenuation characteristics for electromagnetic waves can be improved.
Hereinabove, exemplary embodiments of the invention are described with reference to specific examples. However, the embodiments of the invention are not limited to these specific examples. For example, one skilled in the art may similarly practice the invention by appropriately selecting specific configurations of components included in electromagnetic wave attenuators such as multilayer members, magnetic layers, nonmagnetic layers, magnetic members, and included in electronic devices such as electronic elements, semiconductor chips, etc., from known art. Such practice is included in the scope of the invention to the extent that similar effects thereto are obtained.
Further, any two or more components of the specific examples may be combined within the extent of technical feasibility and are included in the scope of the invention to the extent that the purport of the invention is included.
Moreover, all electromagnetic wave attenuators, and electronic devices practicable by an appropriate design modification by one skilled in the art based on the electromagnetic wave attenuators, and the electronic devices described above as embodiments of the invention also are within the scope of the invention to the extent that the purport of the invention is included.
Various other variations and modifications can be conceived by those skilled in the art within the spirit of the invention, and it is understood that such variations and modifications are also encompassed within the scope of the invention.
While certain embodiments have been described, these embodiments have been presented by way of example only, and are not intended to limit the scope of the inventions. Indeed, the novel embodiments described herein may be embodied in a variety of other forms; furthermore, various omissions, substitutions and changes in the form of the embodiments described herein may be made without departing from the spirit of the inventions. The accompanying claims and their equivalents are intended to cover such forms or modifications as would fall within the scope and spirit of the invention.
Kikitsu, Akira, Yamada, Kenichiro, Kurosaki, Yoshinari, Matsunaka, Shigeki
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