Provided are a display panel and a display device. The display panel includes a substrate and a plurality of pixel units disposed on the substrate. Each pixel unit includes a driving circuit and a light-emitting component, the driving circuit is disposed between the substrate and the light-emitting component, and the driving circuit is used for driving a corresponding light-emitting component to emit light. At least one light-emitting component is a micro light emitting diode (led). For a pixel unit in which the light-emitting component is the micro led, the driving circuit at least includes a first thin film transistor, and a source and a drain of the first thin film transistor are disposed in a source-drain layer. A first electrode of the micro led is electrically connected to a source or a drain of a corresponding first thin film transistor.
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12. A display panel, comprising:
a substrate, a micro light emitting diode (led), and a driving circuit,
wherein the micro led and the driving circuit are disposed on a same side of the substrate, and the driving circuit is located between the micro led and the substrate;
wherein the driving circuit comprises a first thin film transistor, an insulating layer and a metal structure, wherein a source of the first thin film transistor and a drain of the first thin film transistor are disposed in a source-drain layer, the metal structure is disposed between the substrate and the source-drain layer, the insulating layer is disposed between the source-drain layer and the metal structure, and an active layer of the first thin film transistor is disposed between the insulating layer and the substrate;
wherein the micro led comprises a first electrode, an led semiconductor structure and a second electrode, and the first electrode and the second electrode are disposed on a same side of the led semiconductor structure along a direction perpendicular to the substrate and are both disposed between the led semiconductor structure and the first thin film transistor;
wherein the display panel further comprises a light shielding structure disposed between an active layer of the first thin film transistor and the substrate, the light shielding structure is overlapped with the active layer of the first thin film transistor, the light shielding structure and the metal structure are arranged in a same layer and are spaced apart from each other;
wherein the source of the first thin film transistor is electrically connected to the first electrode of the micro led, the source of the first thin film transistor is electrically connected to the active layer at a first position through a first connection portion penetrating through the insulating layer and is electrically connected to the metal structure at a second position through a second connection portion penetrating through the insulating layer, and the first position and the second position do not overlap; or, wherein the drain of the first thin film is electrically connected to the first electrode of the micro led, the drain of the first thin film transistor is electrically connected to the active layer at a first position through a first connection portion penetrating through the insulating layer and is electrically connected to the metal structure at a second position through a second connection portion penetrating through the insulating layer, and the first position and the second position do not overlap; and
wherein the metal structure has an E-shape or U-shape.
1. A display panel, comprising:
a substrate, a micro light emitting diode (led), and a driving circuit,
wherein the micro led and the driving circuit are disposed on a same side of the substrate, and the driving circuit is located between the micro led and the substrate;
wherein the driving circuit comprises a first thin film transistor, an insulating layer and a metal structure, wherein a source of the first thin film transistor and a drain of the first thin film transistor are disposed in a source-drain layer, the metal structure is disposed between the substrate and the source-drain layer, the insulating layer is disposed between the source-drain layer and the metal structure, and an active layer of the first thin film transistor is disposed between the insulating layer and the substrate;
wherein the micro led comprises a first electrode, an led semiconductor structure and a second electrode, and the first electrode and the second electrode disposed on a same side of the led semiconductor structure along a direction perpendicular to the substrate and are both disposed between the led semiconductor structure and the first thin film transistor;
wherein the display panel further comprises a light shielding structure disposed between the active layer of the first thin film transistor and the substrate, the light shielding structure is overlapped with the active layer of the first thin film transistor, the light shielding structure and the metal structure are arranged in a same layer and are spaced apart from each other;
wherein the source of the first thin film transistor is electrically connected to the first electrode of the micro led, the source of the first thin film transistor is electrically connected to the active layer at a first position through a first connection portion penetrating through the insulating layer and is electrically connected to the metal structure at a second position through a second connection portion penetrating through the insulating layer, and the first position and the second position do not overlap; or, wherein the drain of the first thin film is electrically connected to the first electrode of the micro led, the drain of the first thin film transistor is electrically connected to the active layer at a first position through a first connection portion penetrating through the insulating layer and is electrically connected to the metal structure at a second position through a second connection portion penetrating through the insulating layer, and the first position and the second position do not overlap; and
wherein the metal structure is used as a heat dissipation structure for the micro led.
2. The display panel according to
wherein the driving circuit further comprises a capacitance structure, the capacitance structure comprises a first electrode plate and a second electrode plate disposed opposite to the first electrode plate, and wherein the first thin film transistor comprises a gate.
3. The display panel of
wherein the metal structure is disposed in at least two metal layers, an insulating layer is provided between adjacent two metal layers of the at least two metal layers, and the adjacent two metal layers of the at least two metal layers are electrically connected through a via hole disposed in the insulating layer between the adjacent two metal layers of the at least two metal layers, and the metal structure is disposed in a same layer as at least two of the first electrode plate, the second electrode plate, or the gate of the first thin film transistor, respectively.
4. The display panel of
wherein the pixel unit in which the light-emitting component is the micro led further comprises a light shielding structure disposed between an active layer of the first thin film transistor and the substrate, and wherein the light shielding structure is overlapped with a channel region of the active layer; and wherein the metal structure is disposed in at least two metal layers, an insulating layer is provided between adjacent two metal layers of the at least two metal layers, and the adjacent two metal layers of the at least two metal layers are electrically connected through a via hole disposed in the insulating layer between the adjacent two metal layers of the at least two metal layers, and the metal structure is disposed in a same layer as at least two of the first electrode plate, the second electrode plate, the gate of the first thin film transistor, or the light shielding structure, respectively.
5. The display panel of
6. The display panel of
7. The display panel of
8. The display panel of
9. The display panel of
10. The display panel of
13. The display panel according to
14. The display panel of
15. The display panel of
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This application claims priority to Chinese patent application No. CN201910251996.6 filed on Mar. 29, 2019, the disclosure of which is incorporated herein by reference in its entirety.
Embodiments of the present disclosure relate to the field of display technologies, in particular, to a display panel and a display device.
With the development of display technologies, a micro light-emitting diode (micro LED) has been gradually applied in the display field because of its small size, high light-emitting efficiency and low energy consumption. For example, in order to solve the problem that the area of a display region of a display panel is reduced due to a need to provide a hollowed-out region in the middle of an upper end of a display screen of a mobile phone for disposing an optical electronic component such as a front-facing camera for a current full-screen smartphone in the hollowed-out region, the micro LED may be used in the region of the display panel where the optical electronic component is disposed for implementing high-transmittance display by using the characteristic that the micro LED is much smaller in size than the organic light-emitting component.
For the display panel integrated with the micro LED, the present manufacturing method of the display panel is to bind the micro LED directly to an array substrate provided with the driving circuit. However, the defects existing in the chip material of the micro LED will rapidly proliferate and multiply when the temperature is high, resulting in defects invading a light-emitting layer of the micro LED to form a large number of non-radiative recombination centers, so that the light-emitting efficiency of the micro LED is reduced, the service life of the micro LED is reduced, and the higher the temperature is, the shorter the service life of the micro LED is, which affects the service life of the display panel.
In view of the above, the present disclosure provides a display panel and a display device, which effectively reduces a temperature of a micro LED, thereby improving the problems that a light-emitting efficiency of the micro LED is reduced and that a service life of the micro LED is reduced since defects of the micro LED caused by an increase in the temperature invade the light-emitting layer of a micro LED.
In a first aspect, embodiments of the present disclosure provide a display panel.
The display panel includes: a substrate and a plurality of pixel units disposed on the substrate, where each of the plurality of pixel units includes a driving circuit and a light-emitting component, and the driving circuit is disposed between the substrate and the light-emitting component, and the driving circuit is configured for driving a corresponding light-emitting component to emit light.
At least one light-emitting component is a micro LED.
For a pixel unit in which the light-emitting component is the micro LED, the driving circuit at least includes a first thin film transistor, a source and a drain of the first thin film transistor are disposed in a source-drain layer, and a first electrode of the micro LED is electrically connected to a source or a drain of a corresponding first thin film transistor.
The pixel unit in which the light-emitting component is the micro LED further includes a metal structure, the metal structure is disposed between the substrate and the source-drain layer, and the source or the drain of the first thin film transistor electrically connected to the first electrode of the micro LED is electrically connected to the metal structure.
In a second aspect, embodiments of the present disclosure further provide a display device including the display panel described in the first aspect.
Embodiments of the present disclosure provide a display panel and a display device. The display panel includes a substrate and a plurality of pixel units disposed on the substrate, each pixel unit includes a driving circuit and a light-emitting component. The driving circuit is disposed between the substrate and the light-emitting component, and the driving circuit is configured for driving the corresponding light-emitting component to emit light. At least one light-emitting component is a micro LED, and for the pixel unit in which the light-emitting component is the micro LED, the driving circuit at least includes a first thin film transistor, and the source and the drain of the first thin film transistor are disposed in a source-drain layer. A first electrode of the micro LED is electrically connected to the source or the drain of the corresponding first thin film transistor. The pixel unit in which the light-emitting component is the micro LED further includes a metal structure, the metal structure is disposed between the substrate and the source-drain layer, and the source or the drain of the first thin film transistor electrically connected to the first electrode of the micro LED is electrically connected to the metal structure. In this way, the source or the drain of the first thin film transistor electrically connected to the first electrode of the micro LED and the metal structure electrically connected to the first electrode of the micro LED are used as a heat dissipation structure of the micro LED so that a temperature of the micro LED is effectively reduced, thereby improving the problem that the light-emitting efficiency of the micro LED is reduced and that a service life of the micro LED is reduced since defects of the micro LED caused by an increase in temperature invade the light-emitting layer of the micro LED.
Other features, purposes and advantages of the present application will become more apparent after a detailed description of non-restrictive embodiments with reference to the drawings is read.
Hereinafter the present disclosure will be further described in detail in conjunction with the drawings and embodiments. It is to be understood that the specific embodiments set forth below are intended to illustrate and not to limit the present disclosure. Additionally, it is to be noted that, for ease of description, only part, not all, of the structures related to the present disclosure are illustrated in the drawings. Throughout this specification, same or similar labels in the drawings denote same or similar structures, components or processes. It is to be noted that if not in collision, the embodiments and features therein in the present application may be combined with each other.
Embodiments of the present disclosure provide a display panel. The display panel includes a substrate and a plurality of pixel units disposed on the substrate, and each pixel unit includes a driving circuit and a light-emitting component. The driving circuit is disposed between the substrate and the light-emitting component, and the driving circuit is configured for driving a corresponding light-emitting component to emit light. At least one light-emitting component is a micro LED. For a pixel unit in which the light-emitting component is the micro LED, the driving circuit at least includes a first thin film transistor, a source and a drain of the first thin film transistor are disposed in a source-drain layer, and a first electrode of the micro LED is electrically connected to a source or a drain of a corresponding first thin film transistor. The pixel unit in which the light-emitting component is the micro LED further includes a metal structure, the metal structure is disposed between the substrate and the source-drain layer, and the source or the drain of the first thin film transistor electrically connected to the first electrode of the micro LED is electrically connected to the metal structure.
With the development of display technologies, a micro light-emitting diode (micro LED) has been gradually applied in the display field because of its small size, high light-emitting efficiency and low energy consumption. For example, in order to solve the problem that the area of a display region of a display panel is reduced due to a need to provide a hollowed-out region in the middle of an upper end of a display screen of a mobile phone for disposing an optical electronic component such as a front-facing camera for a current full-screen smartphone in the hollowed-out region, the micro LED may be used in the region of the display panel where the optical electronic component is disposed for implementing high-transmittance display by using the characteristic that the micro LED is much smaller in size than the organic light-emitting component. For the display panel integrated with the micro LED, the present manufacturing method of the display panel is to bind the micro LED directly to an array substrate provided with the driving circuit. However, defects existing in the chip material of the micro LED will rapidly proliferate and multiply when the temperature is high, resulting in the defects invading a light-emitting layer of the micro LED to form a large number of non-radiative recombination centers, so that the light-emitting efficiency of the micro LED is reduced, the service life of the micro LED is reduced, and the higher the temperature is, the shorter the service life of the micro LED is, which affects the service life of the display panel.
Embodiments of the present disclosure provide a display panel, the display panel includes a substrate and a plurality of pixel units disposed on the substrate, and each pixel unit includes a driving circuit and a light-emitting component. The driving circuit is disposed between the substrate and the light-emitting component, and the driving circuit is used for driving the corresponding light-emitting component to emit light. At least one light-emitting component is the micro LED. For the pixel unit in which the light-emitting component is the micro LED, the driving circuit at least includes a first thin film transistor, the source and the drain of the first thin film transistor being disposed in a source-drain layer. A first electrode of the micro LED is electrically connected to the source or the drain of the corresponding first thin film transistor. The pixel unit in which the light-emitting component is the micro LED further includes a metal structure, the metal structure is disposed between the substrate and the source-drain layer, and the source or the drain of the first thin film transistor electrically connected to the first electrode of the micro LED is electrically connected to the metal structure. In this way, the source or the drain of the first thin film transistor electrically connected to the first electrode of the micro LED and the metal structure electrically connected to the first electrode of the micro LED are used as a heat dissipation structure of the micro LED so that a temperature of the micro LED is effectively reduced, thereby improving the problem that the light-emitting efficiency of the micro LED is reduced and that a service life of the micro LED is reduced since defects of the micro LED caused by an increase in temperature invade the light-emitting layer of the micro LED.
The above is a core idea of the present disclosure, and technical solutions in the embodiments of the present disclosure will be described clearly and completely in conjunction with drawings in the embodiments of the present disclosure. Based on the embodiments of the present disclosure, all other embodiments obtained by those skilled in the art without making creative work are within the scope of the present disclosure.
At least one light-emitting component 4 in the display panel is a micro LED 5 in the display panel. For the pixel unit 2 in which the light-emitting component 4 is the micro LED 5, the driving circuit 3 at least includes a first thin film transistor 6, a source S and a drain D of the first thin film transistor 6 are disposed in a source-drain layer 61, and a first electrode 51 of the micro LED 5 is electrically connected to a source S or a drain D of a corresponding first thin film transistor 6.
Specifically, combining with
It should be noted that the above-mentioned embodiment will merely be described by taking the first thin film transistor 6 as the driving transistor as an example. The first thin film transistor 6 is not limited to the driving transistor. The first thin film transistor 6 may be determined according to the connection relationship of the thin film transistors in the different driving circuits 3, to ensure that the source S or the drain D of the first thin film transistor 6 is electrically connected to the first electrode 51 of the micro LED 5.
In the embodiments of the present disclosure, the pixel unit 2 in which the light-emitting component 4 is the micro LED 5 further includes a metal structure 7. The metal structure 7 is disposed between the substrate 1 and the source-drain layer 61, and the source S or the drain D of the first thin film transistor 6 electrically connected to the first electrode 51 of the micro LED 5 is electrically connected to the metal structure 7. That is, the first electrode 51 of the micro LED 5 is electrically connected to the source S or the drain D of the corresponding first thin film transistor 6, and the source S or the drain D of the first thin film transistor 6 electrically connected to the first electrode 51 of the micro LED 5 is also electrically connected to the metal structure 7, so that a heat dissipation branch of the micro LED 5 is formed from the first electrode 51 of the micro LED 5 to the source S or the drain D of the first thin film transistor 6 electrically connected to the first electrode 51 of the micro LED 5 to the metal structure 7, and heat generated by the micro LED 5 is conducted to one side of the source-drain layer 61 facing away from the micro LED 5, thereby improving the problem that the light-emitting efficiency of the micro LED is reduced and that a service life of the micro LED is reduced since defects of the micro LED caused by an increase in temperature invade the light-emitting region of the micro LED.
Exemplarily, the light-emitting components 4 in each pixel unit 2 in the display panel may be set to be the micro LED 5s, and the driving circuits 3 disposed between the substrate 1 and the micro LED 5s are in one-to-one correspondence with the micro LED 5s, and the driving circuit 3 drives the corresponding micro LED 5 to emit light, so that the display panel implements the display function. Alternatively, as shown in
Exemplarily, a region provided with the micro LED 5 may be a notch region of a screen with a notch, as shown in
Optionally, combining with
Specifically, as shown in
Combining with
Combining with
Exemplarily, the metal structure 7 may be disposed in one metal layer and is manufactured in the same layer as the first electrode plate 81, or the metal structure 7 is disposed in one metal layer and is manufactured in the same layer as the second electrode plate 82. Similarly, the first electrode plate 81 of the capacitance structure 8 may be manufactured in the same layer as the gate G of the first thin film transistor 6 as shown in
Specifically, as shown in
The metal structure 7 may be disposed in one metal layer and is manufactured in the same layer as any one of the first electrode plate 81, the second electrode plate 82, the gate G of the first thin film transistor, or the light shielding structure 10.
Exemplarily, the metal structure 7 may also be disposed in at least two metal layers, an insulating layer 9 is provided between adjacent two metal layers, and the adjacent two metal layers are electrically connected through the via hole disposed in the insulating layer 9 between the adjacent two metal layers, with the metal structure 7 being disposed in the same layer as at least two of the first electrode plate 81, the second electrode plate 82, the gate G of the first thin film transistor 6, or the light shielding structure 10, respectively. For example, the metal structure 7 may be disposed in two metal layers and is manufactured in the same layer as any two of the first electrode plate 81, the second electrode plate 82, the gate G of the first thin film transistor 6, or the light shielding structure 10, respectively, the metal structure 7 may also be disposed in three metal layers and is manufactured in the same layer as any three of the first electrode plate 81, the second electrode plate 82, the gate G of the first thin film transistor 6, or the light shielding structure 10, respectively, and the metal structure 7 may also be disposed in four metal layers and is manufactured in the same layer as the first electrode plate 81, the second electrode plate 82, the gate G of the first thin film transistor 6, or the light shielding structure 10, respectively. An extension manner of the specific arrangement of the metal structure 7 is similar to the extension manner of the metal structure 7 in the display panel having the structure shown in
Specifically, the metal structure 7 and the source S or the drain D of the first thin film transistor 6 electrically connected to the first electrode 51 of the micro LED 5 are light-opaque structures. The vertical projection of the micro LED 5 on the substrate 1 covers the vertical projection of the metal structure 7 on the substrate 1 and the vertical projection of the source S or the drain D of the first thin film transistor 6 electrically connected to the first electrode 51 of the micro LED 5 on the substrate 1, so that the influence of the metal structure 7 and the source S or the drain D of the first thin film transistor 6 electrically connected to the first electrode 51 of the micro LED 5 on the aperture ratio of the display panel AA1 provided with the micro LED 5 is reduced while the temperature of the micro LED 5 is effectively reduced by using the source S or the drain D of the first thin film transistor 6 electrically connected to the first electrode 51 of the micro LED 5 and the metal structure 7 electrically connected to the first electrode 51 of the micro LED 5 as the heat dissipation structure of the micro LED 5.
It should be noted that
Specifically, taking the display panel having the structure shown in
Exemplarily, the source S or the drain D of the first thin film transistor 6 electrically connected to the first electrode 51 of the micro LED 5 may also include at least one gap 11 in the plane parallel to the substrate 1, and the source S or the drain D of the first thin film transistor 6 electrically connected to the first electrode 51 of the micro LED 5 and the portion of the metal structure 7 disposed in at least one metal layer each may include at least one gap 11 in the plane parallel to the substrate 1. In this way, the gap 11 is disposed, facilitating an increase in the heat dissipation area of the heat dissipation structure, i.e., the source S or the drain D of the first thin film transistor 6 electrically connected to the first electrode 51 of the micro LED 5 and the metal structure 7, of the micro LED 5 by using the surface area of the gap 11, thereby further reducing the temperature of the micro LED 5, and improving the problem that the light-emitting efficiency of the micro LED 5 is reduced and that the service life of the micro LED 5 is reduced since defects of the micro LED 5 caused by an increase in temperature invade the light-emitting region of the micro LED 5.
Exemplarily, combining with
Specifically, combining with
It should be noted that the above-mentioned embodiment is only described by taking at least one of the source S or the drain D of the first thin film transistor 6 electrically connected to the first electrode 51 of the micro LED 5 or the portion of the metal structure 7 disposed in at least one metal layer being E-shaped or U-shaped in the plane parallel to the substrate 1 as an example. Embodiments of the present disclosure do not limit the specific shape of at least one of the source S or the drain D of the first thin film transistor 6 electrically connected to the first electrode 51 of the micro LED 5 or the portion of the metal structure 7 disposed in at least one metal layer in the plane parallel to the substrate 1. In addition, the embodiments of the present disclosure do not limit the positions of the gaps in the heat dissipation structures disposed in different layers and the upper-lower correspondence relationship of the gaps in the heat dissipation structures disposed in different layers.
Optionally, combining with
Exemplarily, the micro LED 5 may be a micro LED having the same-side electrode structure, the first electrode 51 and the second electrode 52 are disposed on the same side of the LED semiconductor structure, and it should be noted that in the manufacturing process of the first electrode 51 and the second electrode 52, the first electrode 51 is disposed on a surface of the first-type semiconductor layer facing away from the active layer and etches the first-type semiconductor layer and the active layer to expose part of the second-type semiconductor layer, and then the second electrode 52 is manufactured on a surface of the second-type semiconductor layer facing towards the active layer, and finally a micro LED structure having the same-side electrode structure is formed. Specifically, combining with
Optionally, combining with
Optionally, as shown in
It should be noted that
Embodiments of the present disclosure provide a display panel, the display panel includes a substrate and a plurality of pixel units disposed on the substrate, and each pixel unit includes a driving circuit and a light-emitting component. The driving circuit is disposed between the substrate and the light-emitting component, and the driving circuit is used for driving the corresponding light-emitting component to emit light. At least one light-emitting component is a micro LED. For a pixel unit in which the light-emitting component is the micro LED, the driving circuit at least includes a first thin film transistor, the source and the drain of the first thin film transistor being disposed in a source-drain layer. A first electrode of the micro LED is electrically connected to the source or the drain of the corresponding first thin film transistor. The pixel unit in which the light-emitting component is the micro LED further includes a metal structure, the metal structure is disposed between the substrate and the source-drain layer, and the source or the drain of the first thin film transistor electrically connected to the first electrode of the micro LED is electrically connected to the metal structure. In this way, the source or the drain of the first thin film transistor electrically connected to the first electrode of the micro LED and the metal structure electrically connected to the first electrode of the micro LED are used as heat dissipation structures of the micro LED so that a temperature of the micro LED is effectively reduced, thereby improving the problem that the light-emitting efficiency of the micro LED is reduced and that a service life of the micro LED is reduced since defects of the micro LED caused by an increase in temperature invade the light-emitting layer of the micro LED.
A display device is further provided in the embodiments of the present disclosure.
It should be noted that the above are merely preferred embodiments of the present disclosure and the technical principles used therein. It will be understood by those skilled in the art that the present disclosure is not limited to the specific embodiments described herein. Those skilled in the art can make various apparent modifications, adaptations and substitutions without departing from the scope of the present disclosure. Therefore, while the present disclosure has been described in detail through the above-mentioned embodiments, the present disclosure is not limited to the above-mentioned embodiments and may include other equivalent embodiments without departing from the concept of the present disclosure. The scope of the present disclosure is determined by the scope of the appended claims.
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