A power supply device ( #1# 104-1) includes a substrate (20) on which an electric component (25) is mounted, a chassis (10) having a chassis surface (11) and a threaded part (10a), a chassis-side resin part (91) connected to a back surface (20a) and the chassis surface (11), a fixation screw (29), and an insulating member (60). The fixation screw (29) fixes both the electric component (25) and the substrate (20) to the chassis (10) by screw-coupling an end part (29c) of the fixation screw (29), exposed in a direction toward the chassis (10) from an open hole formed through the insulating member (60), to the threaded part (10a) of the chassis (10). In addition, the fixation screw (29) brings the electric component (25) and the chassis (10) into electrical noncontact with each other by being placed in an open hole of the insulating member (60).
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#1# 9. A power supply device to be used in a spacecraft, the power supply device comprising: a substrate on which an electric component is mounted on a mounting surface; a chassis having a chassis surface facing a back surface which is the opposite side of the mounting surface; a chassis-side resin part being an insulating resin-cured material to be placed between the back surface of the substrate and the chassis surface so as to be connected to the back surface and the chassis surface, the cured insulating resin with a thermal conductivity between 1 w/mK and 10 w/mK inclusive; and a fixation screw having a threaded shaft part, wherein open holes are formed through the electric component and the substrate, the fixation screw, having the shaft part inserted into a space formed by continuous placement of the open hole of the electric component and the open hole of the substrate and having an end part of the shaft part exposed from the space, fixes the electric component and the substrate each other by screw-coupling the exposed end part to a nut, the electric component and the chassis are not in electrical contact with each other, the substrate includes a plurality of filled through-holes in which a plurality of through-holes penetrating from the back surface, which is one surface to the mounting surface, which is the other surface are filled with a heat transfer material, and the chassis and a ground terminal of the electric component are kept at different potentials.
#1# 1. A power supply device to be used in a spacecraft, the power supply device comprising: a substrate on which an electric component is mounted on a mounting surface; a chassis having a chassis surface facing a back surface which is the opposite side of the mounting surface and a threaded part having undergone threading; a chassis-side resin part being an insulating resin-cured material to be placed between the back surface of the substrate and the chassis surface so as to be connected to the back surface and the chassis surface, the cured insulating resin with a thermal conductivity between 1 w/mK and 10 w/mK inclusive; a fixation screw having a threaded shaft part; and an insulating member through which an open hole in which the fixation screw is to be placed is formed, wherein open holes are formed through the electric component and the substrate, the insulating member includes a first placement part placed in a space formed by continuous placement of the open hole of the electric component and the open hole of the substrate and a second placement part placed outside the open hole of the electric component so as to be in contact with a peripheral edge of the open hole of the electric component, the fixation screw fixes both the electric component and the substrate to the chassis by screw-coupling an end part of the shaft part, exposed in a direction toward the chassis from the open hole of the insulating member, to the threaded part of the chassis and brings the electric component and the chassis into electrical noncontact with each other by being placed in the open hole of the insulating member, the substrate includes a plurality of filled through-holes in which a plurality of through-holes penetrating from the back surface, which is one surface to the mounting surface, which is the other surface are filled with a heat transfer material, and the chassis and a ground terminal of the electric component are kept at different potentials.
#1# 2. The power supply device according to
the threaded part of the chassis is formed integrally with the chassis.
#1# 3. The power supply device according to
the threaded part of the chassis is a component separate from the chassis.
#1# 4. The power supply device according to
a columnar part which is raised in shape of a column from the chassis surface, is threaded, and has an end surface, facing in a raising direction, to be connected to the back surface of the substrate; and
a coupling screw to be screw-coupled to the columnar part, wherein
an open hole is formed through the substrate at a position to be connected to the columnar part, and
the coupling screw fixes the substrate to the columnar part by penetrating the open hole formed at the position to be connected to the columnar part and by being screw-coupled to the columnar part.
#1# 5. The power supply device according to
the columnar part is formed integrally with the chassis.
#1# 6. The power supply device according to
the columnar part is a component separate from the chassis.
#1# 7. The power supply device according to
an upper limit of a total radiation dose to be received for 15 years is 5 Mrad or less.
#1# 8. The power supply device according to
the chassis-side resin part has a Shore A hardness of 50 or less, after being cured, and has a Shore A hardness of 70 or less, after being exposed to radiation with the total radiation dose of 5 Mrad to be received for 15 years.
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The present application is based on PCT filing of PCT/JP2018/024445, filed Jun. 27, 2018, the entire contents of which are incorporated herein by reference. This application is also related to co-pending U.S. application Ser. No. 16/348,776, filed May 9, 2019, which is a U.S. National Phase application of PCT/JP2017/047296 filed Dec. 28, 2017, the entire contents of each are incorporated herein by its reference.
The present invention relates to a space power supply having a structure with high heat dissipation that allows mounting of high-heat-generating components even with use of conventional substrates such as polyimide substrates or glass epoxy substrates.
Performance and a life of an electric component depend on heat generation from or an ambient temperature of the electric component. Particularly, electric components that are used in a vacuum are incapable of heat transfer through a medium of air or heat radiation into air because there is no air for cooling around the electric components, in contrast to on the ground. For a space power supply, therefore, design for heat dissipation from substrates to a chassis is important.
In recent years, additionally, increase in power of artificial satellites has involved increase in power consumption by equipment installed in the artificial satellites and thus has made technology of the design for the heat dissipation important. Particularly, FET (Field Effect Transistor) and diodes for use in switching power supplies are high-heat-generating electric components. In a conventional measure for the heat dissipation, such high-heat-generating electric components are mounted in positions on substrates that are near to screws for fixation to a chassis. Alternatively, such high-heat-generating electric components are directly installed on the chassis and are electrically connected to patterns on the substrates with contrivance in lead bending or contrivance in extension of interconnections to the substrates.
Such installation methods as mentioned above, however, have problems of increase in or loss of an inductance component due to elongation of interconnection paths, influences of EMC (Electromagnetic Compatibility), and increase in working processes during mounting.
Furthermore, there is a necessity for measures of increase in a number of the screws for connection between the substrates and the chassis and placement of the heat-generating components in positions that are as near as possible to the screws for promotion of the heat dissipation and reduction in heat generation density through distribution with use of a large number of components. Consequently, a problem of increase in sizes and mass of the power supplies has existed.
For power supply devices that are used in spacecraft such as artificial satellites, additionally, measures against vibration and consideration for exposure to radiation are demanded.
The present invention mainly aims at providing a simply-configured heat dissipation structure in a power supply device that prevents elongation of interconnection paths for heat-generating components and that obviates necessity to increase a number of screws for connection between substrates and a chassis.
The present invention additionally aims at providing a space power supply device for which measures against vibration and measures against radiation are employed.
A power supply device to be used in a spacecraft of the present invention includes:
a substrate on which an electric component is mounted on a mounting surface;
a chassis having a chassis surface facing a back surface which is the opposite side of the mounting surface and a threaded part having undergone threading;
a chassis-side resin part being an insulating resin-cured material to be placed between the back surface of the substrate and the chassis surface so as to be connected to the back surface and the chassis surface, the cured insulating resin with a thermal conductivity between 1 W/mK and 10 W/mK inclusive;
a fixation screw having a threaded shaft part; and
an insulating member through which an open hole in which the fixation screw is to be placed is formed, wherein
open holes are formed through the electric component and the substrate,
the insulating member includes
the fixation screw fixes both the electric component and the substrate to the chassis by screw-coupling an end part of the shaft part, exposed in a direction toward the chassis from the open hole of the insulating member, to the threaded part of the chassis and brings the electric component and the chassis into electrical noncontact with each other by being placed in the open hole of the insulating member.
The present invention includes the chassis-side resin part and is thus capable of providing the power supply device having the simply-configured heat dissipation structure.
In the power supply device of the present invention, additionally, the substrate and the electric component are fixed by the fixation screw to the chassis through the insulating member. As a result, the space power supply device having vibration resistance may be provided while electrical noncontact between the chassis and the electric component is ensured.
Hereinbelow, embodiments of the present invention will be described with use of the drawings. In the drawings, identical parts or corresponding parts are provided with identical reference characters. In description on the embodiments, description on the identical parts or the corresponding parts are omitted or simplified appropriately. As Embodiments 1 to 8, space power supply devices 100 having different configurations will be described. Hereinbelow, the space power supply devices 100 will be referred to as power supply devices 100.
The power supply devices 100 may have one of the configurations of Embodiments 1 to 8 or may have a plurality of configurations among the configurations of Embodiments 1 to 8.
In the embodiments below, the power supply devices 100 are distinguished by addition of “−1” as in a power supply device 100-1, for instance.
***Description of Configuration***
With reference to
The power supply device 100-1 includes a chassis 10, a substrate 20 on which the electric component 25 is mounted and which is fixed to the chassis 10, and a fixation part 30 to fix the substrate 20 to the chassis 10. In the power supply device 100-1, the fixation part 30 is a substrate fixation screw 31.
In the power supply device 100-1 of
Thus the power supply device 100-1 includes the substrate 20, the chassis 10, and the cured insulating resin 27-1 that is a chassis-side resin part 91 and the electric component 25 is mounted on the substrate 20. The chassis 10 has the chassis surface 11 that is a surface facing the one surface 20a of the substrate 20. The cured insulating resin 27-1 is placed between the one surface 20a of the substrate 20 and the chassis surface 11. The cured insulating resin 27-1 is cured insulating resin connected to the one surface 20a and the chassis surface 11 and having a thermal conductivity between 1 W/mK and 10 W/mK inclusive.
(Substrate 20)
The electric component 25 that generates a large quantity of heat is installed on the substrate 20. In the embodiment, an FET of SMD (Surface Mount Device) type is used as the electric component 25 that generates the large quantity of heat. Ordinarily, heat generated in an FET of SMD type is conducted from electrodes of the FET to a circuit pattern on the substrate 20, then conducted in in-plane directions, and conducted through screw fastening parts to the chassis 10.
(Filled Through-Hole)
In the power supply device 100-1, potting (molding) between an S surface that is the one surface 20a of the substrate 20 and the chassis surface 11 of the chassis 10 is attained with use of a highly thermal conductive insulating resin composition (uncured insulating resin 27-1) as illustrated in
Thus the substrate 20 includes the filled through-holes 21 in which the through-holes penetrating from the one surface 20a to the other surface 20b are filled with heat transfer material. The cured insulating resin 27-1 is connected to one end part 21a of each of the filled through-holes 21 that appears on the one surface 20a. The heat transfer material that fills the filled through-holes 21 is metal, cured insulating resin having a thermal conductivity between 1 W/mK and 10 W/mK inclusive, or the like.
Subsequently, characteristics of the cured insulating resin 27-1 and the insulating liquid resin composition from which the cured insulating resin 27-1 is made will be described. For the cured insulating resin 27-1, silicone or urethane is used as base resin, though details will be described below. The cured insulating resin 27-1 contains at least one of alumina, boron nitride, aluminum nitride, magnesium oxide, and beryllium oxide, as inorganic filler, and has a Shore A hardness of 70 or less, a low-molecular component volatilization volume of 1000 ppm or less with 300° C. heating, and a glass transition point of −20° C. or lower.
Examples of methods of forming the highly thermal conductive cured insulating resin 27-1 between the S surface of the substrate 20 and the chassis 10 include methods (1) and (2) below.
(1) There is the formation method in which the substrate 20 is fixed to the chassis 10, thereafter the insulating liquid resin composition is poured into between the chassis 10 and the substrate 20, and the insulating resin composition is cured by heat.
(2) Alternatively, the cured insulating resin 27-1 is formed on a bottom surface of the chassis 10 and the substrate 20 is thereafter fixed to the chassis 10 by the substrate fixation screw 31. In the method (2), a thickness L2 of the cured insulating resin 27-1 at time before installation of the substrate 20 on the chassis 10 is formed so as to be in a range between 110% and 250% inclusive of a width L1 between the S surface (the one surface 20a) of the substrate 20 and the chassis surface 11 of the chassis 10, depending on the hardness of the cured insulating resin 27-1.
That is,
L2=(1.1 to 2.5)×L1
holds. More preferably, the thickness L2 of the cured insulating resin 27-1 at time before the installation of the substrate 20 on the chassis 10 is in a range between 120% and 200% inclusive of the width L1.
That is,
L2=(1.2 to 2.0)×L1
holds. On condition that the thickness L2 of the cured insulating resin 27-1 is formed in the range, an interface between the S surface and the cured insulating resin 27-1 is brought into more tight and intimate contact by the fixation part 30 for the substrate 20, so that an effect of the heat dissipation may be enhanced. Furthermore, deterioration of the heat dissipation in case of decrease in the thickness due to cooling-heating cycles in a usage environment may be reduced. On condition that the thickness of the cured insulating resin 27-1 is smaller than 110% of the width between the S surface and the chassis surface 11,
that is, on condition that
L2<1.1×L1
holds, the effect of the heat dissipation is deteriorated by the decrease in the thickness of the cured insulating resin 27-1 due to the cooling-heating cycles.
On condition that the thickness L2 exceeds 200% of the thickness L1,
that is, on condition that
L2>2.0×L1
holds, there is a fear that the substrate 20 may be deformed when the substrate 20 is fixed to the chassis 10 by the screws and that the substrate 20 may be cracked in the cooling-heating cycles because of such deformation.
In the above methods (1) and (2), the cured insulating resin 27-1 may be formed by pouring of the insulating liquid resin composition with the S surface of the substrate 20 directed upward (in +Z direction). In this process as well, the thickness L2 of the cured insulating resin is made as large as the thickness described in relation to the above method (2).
Subsequently, the substrate 20 is fixed to the chassis 10 by the screws so that the cured insulating resin 27-1 having been formed comes into contact with the chassis 10. This fixation prevents bubbles to be insulation weak points from remaining on high-voltage sites such as interconnection pattern on the S surface.
(Insulating Resin Composition and Hardness)
The insulating resin composition is the insulating liquid resin composition containing at least one of alumina, boron nitride, aluminum nitride, magnesium oxide, and beryllium oxide, as the inorganic filler providing high thermal conductivity, in insulating liquid resin.
That is,
<insulating liquid resin composition=[insulating liquid resin+inorganic filler]>+thermal curing→cured insulating resin 27-1 holds. The hardness of the cured insulating resin 27-1 obtained through curing of the insulating liquid resin composition is 80 or less (Shore A) or is 70 or less, more preferably.
On condition that the hardness exceeds 80, there are a fear that the effect of the heat dissipation may not be obtained because of deterioration in adhesion to the substrate 20 and a fear that the substrate 20 may be deformed.
The hardness is indicated with use of a Shore A scleroscope as a representative. Soft materials may be measured with use of Shore E, Shore 00, ASKER C, or the like. On condition that the Shore A hardness is 80 or less, such measurement may be carried out with use of Shore E, Shore 00, ASKER C, or the like.
(Low-Molecular Component Content in Cured Material)
The cured insulating resin 27-1 is cut into small pieces, from which components of the cured insulating resin 27-1 are extracted with use of an organic solvent such as hexane or acetone. With use of a gas chromatography mass spectrometer (GC/MS) and helium as carrier gas, amounts of low-molecular components are analyzed while a temperature of the extraction solvent is increased from 40° C. to 300° C. The amounts of low-molecular components are 2000 ppm or less or 1000 ppm or less, preferably.
In excess of 2000 ppm, there is a fear that contamination of the electric component and interconnections, an electrical contact fault, or deterioration in characteristics of the electrical component may be caused by the cooling-heating cycles in use of the cured insulating resin 27-1.
(Outgas from Cured Material)
The cured insulating resin 27-1 is tested in a vacuum environment (7×10−3 Pa or lower) and under test conditions of a heating temperature of 125° C., retention time of 24 hours, and an emitted gas cooling temperature of 25° C., in conformity with ASTM E595. Measurement for outgas emitted from the cured insulating resin 27-1 under the test conditions is carried out.
Total Mass Loss (TML) calculated from results of the measurement should be 1% or less and Collected Volatile Condensable Material (CVCM) calculated from the same should be 0.1% or less.
On condition that TML exceeds 1% or that CVCM exceeds 0.1%, there is a fear that the contamination of the electric component and the interconnections, an electrical contact fault, or the deterioration in the characteristics of the electrical component may be caused by the cooling-heating cycles in the use.
(Glass Transition Point)
The glass transition point of the cured insulating resin 27-1 is −10° C. or lower or −20° C. or lower, preferably. More preferably, the glass transition point is a temperature that is lower than a lower side of temperatures of the cooling-heating cycles in the use of the cured insulating resin 27-1. On condition that the glass transition point is higher than −10° C., there is a fear that unattainability for stable heat dissipation, warpage of the substrate 20, or the like may be caused by increase in deformation of the cured insulating resin 27-1, in the cooling-heating cycles in the use of the cured insulating resin 27-1.
(Insulating Liquid Resin)
The insulating liquid resin may be thermosetting liquid resin such as silicone resin or urethane resin.
(Silicone Resin)
As the silicone resin, publicly known silicone resin may be used as long as the silicone resin is liquid at a room temperature. A curing system for the silicone resin may be of either addition reaction type or condensation reaction type. The silicone resin may be rubbery (elastomeric) or gelled after being cured.
A base polymer has an average molecular weight between 5,000 and 100,000 and is liquid having a viscosity between 1 Pa·s and 100,000 Pa·s at 25° C., for instance. The base polymer is publicly known organopolysiloxane having at least one kind of alkyl group, alkenyl group, allyl group, hydroxyl group, hydrogen group, alkoxyalkyl group, and alkoxysilyl group in side chains and at ends and having a linear, cyclic, branched, or ladder-like main chain structure. The base polymer may be a mixture of two or more kinds of organopolysiloxane.
In the addition reaction type, a composition containing organopolysiloxane including alkenyl group as the base polymer, hydrogen siloxane as a crosslinking agent, and a platinum compound as a catalyst may be used. Amounts of those may be publicly known effective amounts that result in advance in a curing reaction and obtainment of a hardness required after the curing.
In the condensation reaction type, a composition containing organopolysiloxane including silanol group as the base polymer, a silane compound such as alkoxysilane or acetoxysilane as the crosslinking agent, and an organotin compound as the catalyst may be used.
Amounts of those may be conventionally and publicly known effective amounts that result in the advance in the curing reaction and the obtainment of the hardness required after the curing.
(Urethane Resin)
The urethane resin is a resin having a urethane bond in a composition obtained by combination and copolymerization of polyol resin having a plurality of hydroxyl groups in one molecule as a main agent and a compound having two or more isocyanate groups in one molecule as a curing agent.
As the urethane resin, publicly known urethane resin may be used as long as the urethane resin is liquid having a viscosity between 1 Pa·s and 100,000 Pa·s at 25° C. after being mixed.
As the polyol resin, for instance, polyester-based polyol, dicarboxylate-based polyol, polyether-based polyol, polytetramethylene polyoxyglycol, castor-oil-based polyol, ε-caprolactone-based polyol, polyoxypolyalkylene-based polyol, β-methyl-δ-valerolactone-based polyol, carbonate-based polyol, or the like that are publicly known may be used or two or more kinds thereamong may be used in combination.
As the isocyanate compound, tolylene diisocyanate, naphthalene diisocyanate, hexamethylene diisocyanate, xylidine diisocyanate, diphenylmethane diisocyanate, isophorone diisocyanate, cyclohexyl diisocyanate, or the like that are publicly known may be used or two or more kinds thereamong may be used in combination.
An appropriate urethanization catalyst may be used in order to promote a urethanization reaction. As the urethanization catalyst, a publicly known catalyst such as tertiary amine compound or organometallic compound may be used. As urethanization catalysts, triethylenediamine, N, N′-dimethylhexamethylenediamine, N, N′-dimethylbutanediamine, diazabicyclo(5, 4, 0) undecene-7(DBU) and DBU salt, lead octylate, dibutyltin laurate, bismuth tris(2-ethyl hexanoate), titanium diisopropoxy bis(ethyl acetoacetate), and the like may be enumerated, for instance.
A formulation of the polyol and the isocyanate compound is calculated from an equivalence ratio of the isocyanate groups (NCO) of the isocyanate to the hydroxyl groups (OH) of the polyol. The equivalence ratio (NCO/OH) is not to be particularly specified but is preferably in a range between 0.95 and 1.05. It is undesirable for the equivalence ratio to exceed 1.05, because the hardness of the cured insulating resin composition is increased. In addition, it is undesirable because carbon dioxide as a by-product makes void remain in the cured material and thus deteriorates insulation characteristics. On the other hand, it is undesirable for the equivalence ratio to be less than 0.95, because slow progress in the curing reaction is prone to result in uncured material and insufficient production stability. Besides, it is undesirable because of insufficient heat resistance.
(Filler for Obtainment of Thermal Conductivity)
The filler having the thermal conductivity has a role of providing the composition (cured material) with the thermal conductivity and a thermally conductive filler that is publicly known may be used as the filler. As examples of the filler, alumina powder, magnesium oxide powder, boron nitride powder, aluminum nitride powder, beryllium oxide powder, zinc oxide powder, silicon nitride powder, silicon oxide powder, aluminum powder, copper powder, silver powder, nickel powder, gold powder, diamond powder, carbon powder, indium, gallium, and the like may be enumerated.
On condition that it is necessary to ensure not only thermal paths but also insulation performance between the substrate 20 and the chassis 10, powder providing high insulation performance, such as alumina powder, magnesium oxide powder, boron nitride powder, aluminum nitride powder, beryllium oxide powder, or silicon oxide powder is preferably used.
As the thermally conductive filler, one kind of such filler may be solely used or two or more kinds of such filler may be mixed to be used. The thermally conductive filler preferably has a thermal conductivity equal to or higher than 10 W/m·K. That is because the thermal conductivity lower than 10 W/m·K makes it impossible to provide a sufficient thermal conductivity for the composition (cured material). An average particle size of the filler to provide the thermal conductivity is between 0.1 μm and 200 μm inclusive, or
between 0.5 μm and 100 μm inclusive, preferably.
As the thermally conductive filler having such an average particle size, one kind of such filler may be solely used or two or more kinds of such filler having different particle sizes may be mixed to be used. The thermally conductive filler having an average particle size smaller than 0.1 μm is undesirable because particles may be made prone to aggregate and poor in liquidity. The thermally conductive filler having an average particle size larger than 100 μm is undesirable because particles may be made prone to settle and because the thermal conductivity of the cured material may be consequently made nonuniform.
A form of the filler may be amorphous or spherical or any form is allowed. The average particle size may be measured as an average volume value D50 (that is, a particle size or a median size at time when an accumulated volume is 50%) in a particle size distribution measurement by laser diffractometry.
(Insulating Liquid Resin Composition)
The insulating resin composition is obtained by mixture of the inorganic filler, providing the high thermal conductivity, with the insulating liquid resin. Increase in an amount of the filler causes increase in the thermal conductivity of the cured material. Then workability is deteriorated by increase in viscosity of the composition or adhesion to the substrate is deteriorated by increase in the hardness of the cured material. As a result, the effect of the heat dissipation as a target may not be obtained.
Therefore, a ratio of the inorganic filler contained in the insulating liquid resin composition is not particularly confined as long as the viscosity of the insulating resin composition blended with the inorganic filler is equal to or lower than 300 Pas at 25° C.
In case where the insulating resin composition is required to be poured into a narrow gap, it is desirable for the viscosity to be equal to or lower than 50 Pa·s. The inorganic filler is preferably in a range
between 40 vol % and 80 vol % inclusive, or
more preferably in a range
between 50 vol % and 75 vol % inclusive, for instance.
It is undesirable for the ratio to exceed 80 vol % because the workability may be deteriorated by the increase in the viscosity of the insulating resin composition or because stable heat dissipation characteristics may not be obtained due to the increase in the hardness of the cured material. On the other hand, it is undesirable for the inorganic fuller to be lower than 40 vol % because improvement in the thermal conductivity of the cured material may not be expected due to a high ratio of the resin. In order to control reactivity of the insulating resin composition or the adhesion to the substrate, an additive such as a reaction controlling agent such as an acetylene compound, various nitrogen compounds, an organophosphorus compound, an oxime compound, and an organochloro compound or an adhesion modifying agent such as silane coupling agent may be appropriately added as required.
(Curing Conditions)
Curing conditions for the insulating liquid resin composition may be similar to curing conditions for silicone potting material or urethane potting material that are publicly known.
A curing temperature is
preferably from the room temperature to 180° C. or less or
more preferably
from the room temperature to 150° C. or less.
On condition that the curing temperature is equal to or lower than the room temperature, there is a fear that insufficient curing may result in volatilization of unreacted raw materials in the cooling-heating cycles in the use and the contamination of the electric component. On condition that the curing temperature exceeds 150° C., there is a fear that the temperature may exceed a heat-resistance temperature for the electric component and may thereby cause deterioration of the electric component.
Though curing time is not confined as long as the required hardness is attained, the curing time at the room temperature is
48 hours or shorter time or, preferably,
24 hours or shorter time or
the curing time in thermal curing is
between 0.1 hours and 12 hours inclusive or,
preferably,
between 0.5 hours and 6 hours inclusive.
In case where there is a concern about outgas in the use of the cured insulating resin 27-1, the thermal curing is preferably carried out. By a heating process at an upper limit allowable temperature for the electric component, for instance, the low-molecular components in the cured material that are volatile may be decreased and adverse effects of the outgas may be avoided.
A breakdown field of the cured insulating resin composition is preferably equal to or stronger than 10 kV/mm or more preferably equal to or stronger than 15 kV/mm.
The breakdown field weaker than 10 kV/mm may necessitate increasing distances between interconnections for the electric component and distances between interconnection patterns on the substrate 20, depending on a working voltage, and may decrease a contribution of decrease in sizes of power supply members.
(Volume Resistivity of Cured Insulating Resin)
A volume resistivity of the cured insulating resin composition is preferably 1.0E+10 Ω·cm or more or, more preferably,
1.0E+12 Ω·cm or more.
The volume resistivity lower than 1.0E+10 Ω·cm
may necessitate increasing the distances between the interconnections for the electric component and the distances between the interconnection patterns on the substrate 20, depending on the working voltage, and may decrease the contribution of the decrease in the sizes of the power supply members. Before potting of the insulating liquid resin composition onto heat-generating components or the substrate or pouring of the insulating liquid resin composition into an enclosure, those adherends may be treated with surface modifier (primer) to improve the adhesion. A publicly known primer for silicone or for urethane may be used.
In summary of methods of manufacturing the power supply device 100-1, a manufacturing method of pouring the resin into between the substrate 20 and the chassis 10 is as follows.
The method of manufacturing the power supply device 100-1 includes
a substrate placement step of placing the substrate 20 with respect to the chassis surface 11 so that the one surface 20a of the substrate 20 may face the chassis surface 11,
a pouring step of pouring the insulating liquid resin composition into between the one surface 20a of the substrate 20 and the chassis surface 11, and
a curing step of forming the chassis-side resin part 91 by curing the poured liquid resin composition.
In the liquid resin composition, silicone or urethane is used as the base resin and at least one of alumina, boron nitride, aluminum nitride, magnesium oxide, and beryllium oxide is contained as the inorganic filler.
The hardness of the chassis-side resin part 91 is preferably 70 or less in Shore A hardness. Preferably, the chassis-side resin part 91 has the low-molecular component volatilization volume of 1000 ppm or less in 300° C. heating and has the glass transition point of −20° C. or lower.
A summary of a method of manufacturing the power supply device 100-1 in which the substrate 20 is installed onto the chassis 10 after curing of the resin is as follows.
The method of manufacturing the power supply device 100-1 includes a pouring step of pouring the insulating liquid resin composition onto the chassis surface 11,
a curing step of forming the chassis-side resin part 91 by curing the liquid resin composition poured onto the chassis surface 11, and
an installation step of installing the substrate 20 onto the chassis 10 so that the one surface 20a of the substrate 20 may face the chassis surface 11 and may come into intimate contact with the chassis-side resin part 91.
In the liquid resin composition,
silicone or urethane is used as the base resin and at least one of alumina, boron nitride, aluminum nitride, magnesium oxide, and beryllium oxide is contained as the inorganic filler.
The hardness of the chassis-side resin part 91 is preferably 70 or less in Shore A hardness. Preferably, the chassis-side resin part 91 has the low-molecular component volatilization volume of 1000 ppm or less in 300° C. heating and has the glass transition point of −20° C. or lower.
In both of the manufacturing method, the viscosity of the liquid resin composition is preferably equal to or lower than 300 Pa·s at 25° C.
With reference to
In the power supply device 100-2, in contrast to the power supply device 100-1, an electric component 25 such as TO-254 package in which leads as the electrodes 26 are formed is used as a space power MOSFET. In the power supply device 100-2, the electric component 25 that is a heat-generating component is TO-254. The power supply device 100-2 differs from the power supply device 100-1 in (1) to (3) below. The other configurations are the same as configurations of the power supply device 100-1.
(1) In a configuration, the filled through-holes 21 are provided directly beneath the electric component 25 so as to conduct the heat to the S surface of the substrate 20.
(2) Between a bottom surface of the electric component 25 and the substrate 20, thermally-conductive material 23 is placed in order to efficiently conduct the heat 8 of the electric component 25 to the filled through-holes 21. The thermally-conductive material 23 is solder paste or silver paste, for instance.
(3) The electric component 25 is fixed to the substrate 20 by a fixation screw 29.
Ordinarily, the electric component 25 of the same type to be used for space has a design for heat dissipation in which a semiconductor is mounted in a position adjacent to a surface to be in contact with the substrate 20 or the chassis 10 and the like in the electric component 25 (in the package). Therefore, the heat may be efficiently dissipated to the chassis 10 by the configurations of
With reference to
In space, gases such as air do not exist around the power supply device 100-3 in such a quantity as to influence heat conduction and thus heat generated from the substrate 20 is dissipated to the chassis 10 through the substrate fixation screw 31 that fixes the substrate 20. Due to absence of the gases such as air, however, the heat is dissipated only from a contact area formed between the substrate 20 and the chassis 10 by pressure of the substrate fixation screw 31. Therefore, a number of the screws needs to be increased as the quantity of the heat increases. Paths for the heat dissipation may be enhanced by coverage of an end part of the substrate 20 including the substrate fixation screw 31 and the chassis 10 with the resin 27-2 having the high thermal conductivity as the potting material. The same resin as the cured insulating resin 27-1 may be used as the resin 27-2 in this example. In a configuration in which the plurality of screw holes 12 exist on the chassis 10 and in which the substrate fixation screws 31 are screwed into the screw holes 12, as stated in description on
The power supply device 100-4 illustrated in
(1) The electrodes 26 of the electric component 25 are on top of the electric component 25.
(2) The electrodes 26 and the filled through-holes 21 are connected by wires or bus bars that are electrode connection parts 28-1.
(3) The electric component 25 is fixed to the substrate 20 by adhesive 24.
In the electric component 25 mounted on the substrate 20, in general, the electrodes 26 are directly connected to the circuit pattern on the substrate 20. In case where the substrate 20 and the electric component 25 greatly differ in the coefficient of thermal expansion, however, soldered parts may be cracked in thermal cycles. Therefore, a method may be adopted including daringly orienting the electrodes 26 of the electric component 25 in an upward direction opposite to the substrate 20, connecting the wires or the bus bars as electrode extension parts to the electrodes 26 oriented upward, and connecting the wires or the bus bars to the circuit pattern on the substrate 20. In such a configuration, the heat dissipation is enabled by connection of the wires or the bus bars to the filled through-holes 21.
In order to attain the heat dissipation, in
As illustrated in
As illustrated in
The contact resin part 93 is placed in a position opposed to the cured insulating resin 27-1 with respect to the substrate 20 so as to be in contact with at least a portion of the electric component 25. The chassis connection part 28-2 having heat transference connects the contact resin part 93 and the chassis 10.
In the power supply device 100-8, a through-hole connection part 28-3 is connected to the other end part 21b of each of the filled through-holes 21 on the substrate 20. Thus the heat 8 is dissipated through the cured insulating resin 27-1 to the chassis 10. As a result, paths for the heat dissipation may be made shorter than the paths for the heat dissipation in the power supply device 100-7 of
That is, the filled through-holes 21 are placed in some positions around the electric component 25 on the substrate 20, as illustrated in
Though the power supply device 100-8 is used as an example in Embodiment 9, the method of Embodiment 9 may be applied to the power supply devices 100-1 to 100-7.
(a) of
In the power supply devices 100 described as to Embodiments 1 to 9, the heat dissipation paths are ensured by potting (filling, molding) between the S surface of the substrate on which the high-heat-generating component is mounted and the chassis of the power supply connected to a structure of an artificial satellite with the insulating liquid resin that is resistant to space environment and that has the high thermal conductivity and by potting (filling, molding) on the screw part to connect the substrate and the chassis with the insulating liquid resin that is resistant to the space environment and that has the high thermal conductivity.
That is, curbing increase in a temperature of the component on the substrate is enabled by provision of the paths for the heat dissipation in addition to conventional thermal paths (in in-plane directions along the substrate) that depend on copper foil forming the circuit pattern in the substrate and by resultant increase in capability for the heat dissipation to the chassis that is a casing of the power supply.
The heat dissipation paths are ensured by the potting (filling, molding) around the high-heat-generating component or between the substrate on which the component is mounted and the chassis with the insulating liquid resin that is resistant to the space environment and that has the high thermal conductivity. In addition to the conventional thermal paths (in the in-plane directions along the substrate) made of the circuit pattern formed of the copper foil ordinarily between tens of μm and several hundred μm, the paths for the heat dissipation are provided by connection between the substrate and the chassis through the resin having the high thermal conductivity. The paths for the heat dissipation increase the capability for the heat dissipation in the chassis direction that is an off-plane direction from the substrate. Thus curbing the increase in the temperature of the component on the substrate is enabled.
The insulating liquid resin having the high thermal conductivity contains at least one of alumina, boron nitride, aluminum nitride, magnesium oxide, and beryllium oxide, as the inorganic filler providing the high thermal conductivity.
The hardness of the cured insulating liquid resin is 70 or less (Shore A).
The cured insulating liquid resin has the low-molecular component volatilization volume of 500 ppm or less in 300° C. heating and has the glass transition point of −20° C. or lower. In the cured insulating liquid resin, as described above, silicone or urethane is the base resin.
The configuration in which radiation paths are ensured by the thermally conductive potting rein enables curbing increase in temperatures of electric components such as FET elements and enables decrease in sizes or increase in power of the power supply. Thus a structure with high heat dissipation that allows mounting of high-heat-generating components even with use of conventional substrates such as polyimide substrates or glass epoxy substrates may be provided.
With reference to
The power supply device 101-1 includes the chassis 10, the substrate 20, and the chassis-side resin part 91.
Hereinbelow, the one surface 20a and the other surface 20b of the substrate 20 will be referred to as the surface 20a and the surface 20b.
The electric component 25 is mounted on the substrate 20. The chassis 10 has the chassis surface 11 that is the surface facing the surface 20a of the substrate 20 and the raised part 14 which is raised from the chassis surface 11 toward the surface 20a and whose end part 14a with respect to a raising direction 15 faces the surface 20a without contact with the surface 20a. The raised part 14 is a heat transfer part 94. Heat generated in the electric component 25 is conducted to the raised part 14. The chassis-side resin part 91 is placed between the surface 20a of the substrate 20 and the end part 14a of the raised part 14 and is connected to the surface 20a and the end part 14a. The chassis-side resin part 91 is cured insulating resin having a thermal conductivity between 1 W/mK and 10 W/mK inclusive.
As illustrated in
In
In the raised part 14, an end surface 14b of the end part 14a protrudes from the chassis surface 11 so as to be adjacent to the surface 20a of the substrate 20. The chassis-side resin part 91 is filled between the end surface 14b of the raised part 14 and the surface 20a of the substrate 20. The chassis-side resin part 91 is thermally connected to the filled through-holes 21 thermally connected to the electric component 25.
The filled through-holes 21 are surrounded by a nonconductive region 20c of the substrate 20. The nonconductive region 20c is a region having no electrical conductivity in the substrate 20. As illustrated in
The power supply device 101-1 illustrated in
The heat 8 of the electric component 25 is conducted from the filled through-holes 21 of the substrate 20 to the chassis-side resin part 91 and from the chassis-side resin part 91 to the raised part 14 of the chassis 10. In addition, the heat 8 of the electric component 25 is conducted from around the fixation screw 29 through the substrate 20 to the installation part 16.
In a power supply device having the configuration in which the through-holes formed on the substrate 20 and the chassis 10 are connected by the resin so that the heat may be dissipated unidirectionally, performance of the heat dissipation greatly depends on the thermal conductivity of the resin.
In the power supply devices of Embodiment 10, by contrast, the convex steps are provided on the chassis 10 by the raised part 14. In Embodiment 11 to be described later, a concave recess 55 is provided on the chassis 10.
By diffusion of the heat throughout the convex or concave wall surfaces through thermal diffusion in the resin, the heat dissipation paths are enhanced or the heat dissipation paths of the shortest routes are formed in the resin. The performance of the heat dissipation is improved by such heat dissipation paths and thus the power supply devices may be provided with higher heat dissipation property.
An upper drawing in
The substrate 20 includes the filled through-holes 21 in which the through-holes penetrating from the surface 20a to the surface 20b are filled with heat transfer material. The raised part 14-1 is raised from the chassis surface 11 toward the surface 20a in the chassis-side resin part 91 and has the end part 14a with respect to the raising direction 15 facing the surface 20a. The chassis-side resin part 91 is connected to the one end part 21a of each of the filled through-holes 21 that appears on the surface 20a.
In
The raised part 14-1 is shaped like a column, for instance. The raised part 14-1 is shaped like a cylinder, a triangular column, a square column, or a polygonal column with five or more sides, as examples.
In
As illustrated in
As illustrated in
The power supply device 102-2, the power supply device 102-3, and the power supply device 102-4 differ from the power supply device 102-1 in the shape of the raised part. In both of a raised part 14-2 of the power supply device 102-2 and a raised part 14-4 of the power supply device 102-4, shapes of sections taken with the raising direction 15 being a normal direction vary along the raising direction 15. In the raised part 14-2 and the raised part 14-4, sizes of the shapes of the sections gradually decrease in the raising direction 15.
In the raised part 14-2 of the power supply device 102-2, cross-sectional areas (outside diameters) are varied. In the raised part 14-2 of the power supply device 102-2, the cross-sectional areas are decreased stepwise from the chassis surface 11 toward the surface 20a of the substrate 20. The raised part 14-2 of the power supply device 102-2 is shaped like a plurality of cylinders that differ in outside diameter and that are built up in descending orders of the outside diameter from the chassis surface 11 toward the surface 20a of the substrate 20.
In the raised part 14-3 of the power supply device 102-3, the outside diameters of the cross-sectional areas vary while alternating between a long diameter and a short diameter from the chassis surface 11 toward the surface 20a.
The raised part 14-3 is spirally shaped or has wedged longitudinal sections and has perimeters forming an uneven shape, for instance.
In the raised part 14-4 of the power supply device 102-4, the cross-sectional areas are decreased gently or continuously from the chassis surface 11 toward the surface 20a of the substrate 20. The raised part 14-4 is shaped like a truncated cone or a truncated polygonal pyramid, for instance.
In the power supply device 101-1 and the power supply device 101-2, the chassis-side resin part 91 connects the end surface 14b of the raised part 14 and the surface 20a. The creepage distance d1 has the length equal to or longer than the specified distance d. According to the power supply device 101-1 and the power supply device 101-2, consequently, the potential at the ground terminal 25a and the potential on the chassis 10 may be kept at different potentials and the heat of the electric component 25 may be conducted to the chassis 10.
In the power supply device 102-1 to the power supply device 102-4, the end surface 14b of the raised part 14 is in contact with the surface 20a. The chassis-side resin part 91 connects the end surface 14b of the raised part and the surface 20a. In addition, the creepage distance d1 has the length equal to or longer than the specified distance d. According to the power supply device 102-1 to the power supply device 102-4, consequently, the potential at the ground terminal 25a and the potential on the chassis 10 may be kept at different potentials and the heat of the electric component 25 may be conducted to the chassis 10.
The power supply device 103 includes the electric component 25, the substrate 20, the chassis 10 having the chassis surface 11 facing the surface 20a of the substrate 20, and the chassis-side resin part 91. The substrate 20 includes a solder leveler formation region 51, in which solder leveler 54 is formed in a region to be covered with the electric component 25 on the surface 20b that is on the back side of the surface 20a and includes a solder leveler formation region 51 in which the solder leveler 54 is formed on the surface 20a. The substrate 20 includes a plurality of through-holes 52 which penetrate from the surface 20a to the surface 20b, in which the solder leveler 54 is formed in inside surfaces, and which are placed in the region to be covered with the electric component 25.
The chassis-side resin part 91 is placed between the electric component 25 and the solder leveler formation region 51 formed on the surface 20b of the substrate 20, between the solder leveler formation region 51 formed on the surface 20a of the substrate 20 and the chassis 10, and inside the through-holes 52.
The chassis-side resin part 91 has a thermal conductivity between 1 W/mK and 10 W/mK inclusive and has a hardness of 70 or less on a Shore A scleroscope. The chassis-side resin part 91 is cured insulating resin.
As illustrated in
As illustrated in
(1) The chassis-side resin part 91 is placed between the electric component 25 and the solder leveler formation region 51 formed on the surface 20b of the substrate 20. In the solder leveler formation region 51, the solder leveler 54 is formed on a surface of copper plating 53 applied on the surface 20b of the substrate 20.
(2) The chassis-side resin part 91 is placed between the solder leveler formation region 51 formed on the surface 20a of the substrate 20 and the chassis 10.
(3) The chassis-side resin part 91 is placed inside the through-holes 52 formed in the region of the substrate 20 directly beneath the electric component 25.
Therein, the copper plating 53 is applied on the inside surfaces of the through-holes 52 and the solder leveler 54 is applied on surfaces of the copper plating 53.
The inner side of the through-holes 52 has a laminated structure made of the copper plating 53 and the solder leveler 54.
In the power supply device 103, paths for heat dissipation extending from the heat-generating electric component 25 to the chassis 10 are formed of the chassis-side resin part 91 that is the resin.
With use of the resin having a low hardness, stresses generated due to thermal shock and vibrations may be absorbed or relaxed by the resin.
Thus separation of each of the electric component 25, the substrate 20, the through-holes 52, and the chassis 10 from resin interfaces on the chassis-side resin part 91 may be reduced, so that reliability for the heat dissipation may be increased.
By interposition of the chassis-side resin part 91 having the low hardness between the electric component 25 and the substrate 20, adhesion between the electric component 25 and the substrate 20 may be increased and interfacial thermal resistance may be reduced.
It is desirable that a thickness of the chassis-side resin part 91 that is the cured resin provided between the electric component 25 and the substrate 20 should be small, for decrease in the thermal resistance, and the thickness of the chassis-side resin part 91 is preferably equal to or lower than 0.25 mm.
The electric component 25 may be any of a resin molding, a ceramic package product, and a configuration covered with a metal case.
<Modification 1>
As the chassis-side resin part 91 illustrated in
The bottom surface 11a of the chassis 10 or the surface 20b of the substrate 20 is coated with the liquid resin composition having the high viscosity equal to or higher than 10 Pa·s coated thicker than usual.
The liquid resin composition having the high viscosity as coating is filled into the inside of the through-holes 52 by a pressure generated when the substrate 20 is fixed to the chassis 10 by the substrate fixation screw 31 or when the electric component 25 is fixed to the substrate 20 by the fixation screw 29.
The viscosity of the liquid resin composition having the high viscosity equal to or higher than 10 Pa·s is between 10 Pa·s and 300 Pa·s inclusive, as described above.
More preferably, the viscosity of the liquid resin composition is between 50 Pa·s and 150 Pa·s because difficulty in fixation by the screw is increased with increase in the viscosity of the liquid resin composition.
Even the resin having the viscosity equal to or higher than 10 Pa·s is filled into the through-holes 52 during the coating.
The resin, however, may flow out of the through-holes 52 due to decrease in the viscosity when the resin is cured. In that case, the resin, if curable by heat, is semi-cured by being heated at a low temperature and is thereafter cured at a curing temperature higher than the temperature for semi-curing. Thus outflow from the through-holes 52 may be remedied.
On condition that the viscosity of the liquid resin composition is lower than 10 Pa·s, there is a fear that decrease in the viscosity during the curing of the resin may prevent the resin from remaining inside the through-holes 52 so as to cause occurrence of unfilled regions or so as to make voids remain inside the through-holes 52 after the curing of the resin. In those cases, it is necessary to provide a wall that is to dam the resin so as to prevent the resin from flowing.
<Modification 2>
The cured resin may be formed of the same resin. The term “the same” in “the same resin” means that physical properties of the resin are considered the same.
That is, in case where
(1) a space between the electric component 25 and the solder leveler formation region 51 on the substrate 20,
(2) a space between the solder leveler formation region 51 formed on the surface 20a of the substrate 20 and the chassis 10, and
(3) the inside of the through-holes 52 of the substrate 20 provided directly beneath the electric component 25
are filled with different resins, there is a fear that separation on interfaces between the cured materials may be caused by thermal shock because of difference in the physical properties such as hardness and coefficient of thermal expansion among the cured resins. Problems such as the separation may be avoided by filling of resins having the same physical properties.
With reference to
Predominantly, characteristics of the power supply device 104 may be described as (1) to (3) below.
(1) The power supply device 104 differs from the power supply device 101-1 of
(2) In the power supply device 104, the electric component 25 and the chassis 10 are not in electrical contact with each other. The electric component 25 is assumed to be a semiconductor package.
(3) The power supply device 104 is used in a spacecraft such as artificial satellite and influence of radiation in use in the spacecraft has been taken into consideration for the power supply device 104.
For Embodiment 12, the one surface 20a of the substrate 20 will be referred to as a back surface 20a and the other surface 20b will be referred to as a mounting surface 20b.
(a) The configuration illustrated by the frame A relates to a method of fixing the electric component 25 and the substrate 20.
(b) The configuration illustrated by the frame B relates to a method of fixing an end part of the substrate 20 and the chassis 10.
(c) The configuration illustrated by the frame C relates to a second resin part 96 placed between the bottom surface of the electric component 25 and the mounting surface 20b of the substrate 20. The second resin part 96 has the same resin that the chassis-side resin part 91 has. In case where the chassis-side resin part 91 is placed between the bottom surface of the electric component 25 and the mounting surface 20b of the substrate 20, the chassis-side resin part 91 serves as the second resin part 96.
For Embodiment 12, description will be given on six configurations that are combinations of three types from type A1 to type A3 of the configurations illustrated by the frame A and two types of type B1 and type B2 of the configurations illustrated by the frame B. Besides, the power supply device 104-7 to be described later will be described as a modification. On condition that the configuration made of type A1 and type B1 is represented as A1-B1, the six configurations may be represented as A1-B1, A1-B2, A2-B1, A2-B2, A3-B1, and A3-B2. The power supply device 104-1 corresponds to the configuration A1-B1.
<Configuration of Power Supply Device 104-1>
With reference to
The configuration of type B1 illustrated in
With reference to
<Configuration of Power Supply Device 104-2>
With reference to
<Configuration of Power Supply Device 104-3>
With reference to
<Configuration of Power Supply Device 104-4>
The power supply device 104-4 illustrated in
<Configuration of Power Supply Device 104-5>
The power supply device 104-5 illustrated in
<Configuration of Power Supply Device 104-6>
The power supply device 104-6 illustrated in
<Configuration of Power Supply Device 104-7>
In the power supply device 104-7 illustrated in
Subsequently, relation between the power supply device 104 and radiation will be described. The power supply device 104 that is placed in a spacecraft is exposed to radiation. Permeability of the radiation such as alpha ray, gamma ray, electron beam, and neutron beam may be weakened by setting of a thickness at 2 mm or more of the chassis 10 where the electric component 25 is to be provided. It is desirable that a total radiation dose the power supply device 104 receives for 15 years should be 5 Mrad or less, in terms of prevention against alteration of the chassis-side resin part 91 and the second resin part 96, and it is more desirable that the total radiation dose should be 2 Mrad or less, in terms of prevention against malfunction and characteristic degradation of analog semiconductors. In the power supply device 104 in which digital semiconductors are installed, furthermore, it is the most desirable to set the total radiation dose the power supply device 104 receives for 15 years in a range between 0.1 Mrad and 1 Mrad inclusive, in terms of prevention against malfunction and characteristic degradation of the digital semiconductors.
The chassis-side resin part 91 has a Shore A hardness of 50 or less, after being cured, and has a Shore A hardness of 70 or less, after being exposed to the total radiation dose of 5 Mrad to be received for 15 years. The chassis-side resin part 91 tends to have progressing hardness because exposure to the radiation may cause unreacted active groups to react so that polymerization may progress. Exposure to excess radiation over 50 Mrad, however, may cause cleavage of organic groups in side chains, progression of cross-linkage leading to shrinkage of resin, and remarkable increase in the hardness. Occurrence of the resin shrinkage may result in separation on interfaces between highly thermal conductive resin and adherend such as the chassis, the substrate, the electric component, or solder leveler and thus may result in deterioration in heat dissipation. Presence and absence of such a phenomenon of the resin may be determined based on decrease in peaks of the organic groups in the side chains through a structural analysis with FT-IR analysis. It has been confirmed through the structural analysis with the FT-IR analysis that there is no change in peak intensities of the organic groups in the side chains, meaning that there is no occurrence of the cleavage of the organic groups in the side chains, on condition that the total radiation dose the chassis-side resin part 91 receives for 15 years is 5 Mrad or less. Therefore, desirable use without deterioration in performance of the heat dissipation may be ensured on condition that the total radiation dose the chassis-side resin part 91 receives for 15 years is 5 Mrad or less.
Based on above, an upper limit of the total radiation dose the power supply device 104 receives for 15 years is any of 5 Mrad, 2 Mrad, and a value in the range between 0.1 Mrad and 1 Mrad inclusive. Besides, the chassis-side resin part 91 has the Shore A hardness of 50 or less, after being cured, and has the Shore A hardness of 70 or less, after being exposed to the radiation with the total radiation dose of 5 Mrad to be received for 15 years.
The power supply device 104 and other electronic equipment are placed around the central cylinder 221. By use of above components as shields against the radiation, the radiation dose to which the power supply device 104 and other electronic equipment are to be exposed in a lifespan of the artificial satellite that is a spacecraft may be adjusted. By use of the chassis-side resin part 91 under an adjusted environment, deterioration of the chassis-side resin part 91 under influence of the radiation in the lifespan of the artificial satellite may be reduced.
(1) The power supply device 104 of Embodiment 12 includes the chassis-side resin part 91 and thus may dissipate heat of the power supply device by a simply-configured heat dissipation structure.
(2) In the power supply devices 104-1, 104-2, and 104-5 to 104-7, the substrate and the electric component are fixed by the fixation screw to the chassis through the insulating member 60. As a result, the space power supply devices having vibration resistance may be provided while the electrical noncontact between the chassis and the electric component is ensured.
(3) The electric component 25 and the substrate 20 are fixed to each other by the nut 73 in the power supply device 104-3 and the power supply device 104-4 and thus the electric component 25 and the substrate 20 may be fixed even in the power supply device 104 with specifications including a space between the substrate 20 and the chassis 10.
(4) In the power supply device 104 of Embodiment 12, the upper limit of the total radiation dose to be received for 15 years is restricted so as to be any of 5 Mrad, 2 Mrad, and a value in the range between 0.1 Mrad and 1 Mrad inclusive. Thus the total radiation dose to be received for 15 years is restricted and therefore troubles due to deterioration of the chassis-side resin part 91 caused by the radiation may be prevented. Consequently, an effect of the heat dissipation by the chassis-side resin part 91 may be maintained for 15 years.
Though Embodiment 1 to Embodiment 12 have been described above, those embodiments relate to the space power supply devices and two or more out of the embodiments may be combined. Alternatively, one of the embodiments may be partially embodied. Alternatively, two or more out of the embodiments may be partially embodied in combination. Note that the present invention is not to be limited by those embodiments but may be modified in various manners as appropriate.
8: heat; 10: chassis; 10a: threaded part; 10b: columnar part; 10c: coupling screw; 10d: washer; 11: chassis surface; 11la: bottom surface; 12: screw hole; 13: area; 14, 14-1, 14-2, 14-3, 14-4: raised part; 14a: end part; 14b: end surface; 14c: side surface; 15: raising direction; 16: installation part; 17: insulating body; 18: internal thread; 20: substrate; 20a: one surface; 20b: the other surface; 20c: nonconductive region; 20d: open hole; 20e: open hole; 21: filled through-hole; 21a: one end part; 21b: the other end part; 23: thermally-conductive material; 24: adhesive; 25: electric component; 25a: ground terminal; 25d: open hole; 25e: peripheral edge; 26: electrode; 27-1: cured insulating resin; 27-2: resin; 27-3, 27-4: cured resin; 28-1: electrode connection part; 28-2: chassis connection part; 28-3: through-hole connection part; 29: fixation screw; 29a: head part; 29b: shaft part; 29c: end part; 30: fixation part; 31: substrate fixation screw; 31a: washer; 32a: solder; 32b: screw; 33: spring fixture; 41: void; 42: screw; 51: solder leveler formation region; 52: through-hole; 53: copper plating; 54: solder leveler; 55: recess; 60: insulating member; 60a: first placement part; 60b: second placement part; 61: open hole; 71: space; 72: washer; 73: nut; 74: washer; 75: screw; 76: washer; 77: heavy component; 91: chassis-side resin part; 92: component-side resin part; 93: contact resin part; 94: heat transfer part; 96: second resin part; 100, 100-1, 100-2, 100-3, 100-4, 100-5, 100-6, 100-7, 100-8, 101-1, 101-2, 102-1, 102-2, 102-3, 102-4, 103, 104, 104-1, 104-2, 104-3, 104-4, 104-5, 104-6, 104-7: power supply device; 208: electronic equipment; 221: central cylinder; 222: web panel; 223: ceiling panel; 224: base panel; 225: outer surface panel; 230: artificial satellite structure
Miyamoto, Takashi, Yasuda, Naoki, Okada, Shinichi, Kusano, Ryota
| Patent | Priority | Assignee | Title |
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| Nov 13 2020 | MIYAMOTO, TAKASHI | Mitsubishi Electric Corporation | ASSIGNMENT OF ASSIGNORS INTEREST SEE DOCUMENT FOR DETAILS | 054704 | /0943 | |
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