The present disclosure relates to a display substrate and a method for manufacturing the same. The display substrate includes: a substrate; a first electrode located on the substrate; and a conductive convex located on the first electrode. A dimension of a cross section of the conductive convex along a plane parallel to the substrate is negatively correlated to a distance from the cross section to a surface of the first electrode.
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1. A display substrate, comprising:
a substrate;
a first electrode located on the substrate; and
a conductive convex located on the first electrode,
wherein a dimension of a cross section of the conductive convex along a plane parallel to the substrate is negatively correlated to a distance from the cross section to a surface of the first electrode, and
wherein a ratio of a minimum dimension of a surface of a side of the conductive convex facing the substrate along a direction parallel to the substrate to a distance from the conductive convex to the first electrode ranges from 1:1 to 1:3, and
wherein the conductive convex comprises a first portion, a second portion covering the first portion, and an inorganic material layer covering the first portion, the inorganic material layer being located between the first portion and the second portion, and
wherein an orthographic projection of the first portion on the substrate is located within an orthographic projection of the first electrode on the substrate,
the second portion is in contact with the first electrode,
a surface of the second portion away from the substrate is conformal to a surface of the first portion away from the substrate, and
the first portion is composed of a dielectric material, the dielectric material comprises an organic material, and the second portion is composed of a conductive material.
10. A method for manufacturing a display substrate, comprising:
provide a substrate;
forming a first electrode on the substrate; and
forming a conductive convex on the first electrode,
wherein a dimension of a cross section of the conductive convex along a plane parallel to the substrate is negatively correlated to a distance from the cross section to a surface of the first electrode, and
wherein a ratio of a minimum dimension of a surface of a side of the conductive convex facing the substrate along a direction parallel to the substrate to a distance from the conductive convex to the first electrode ranges from 1:1 to 1:3,
wherein forming the conductive convex comprises:
forming a dielectric material layer on the first electrode;
patterning the dielectric material layer to form a first portion of the conductive convex;
forming a first conductive material layer on the substrate, the first electrode, and the first portion; and
patterning the first conductive material layer to form a second portion of the conductive convex,
wherein an orthographic projection of the first portion on the first electrode is located within an orthographic projection of the second portion on the first electrode,
the second portion covers the first electrode and is in contact with the first electrode, and
a surface of the second portion away from the substrate is conformal to a surface of the first portion away from the substrate,
wherein forming the conductive convex further comprises: forming an inorganic material layer on the first portion after forming the first portion and before forming the first conductive material layer, wherein a surface of the inorganic material layer away from the substrate is conformal to a surface of the first portion away from the substrate are conformal.
2. The display substrate according to
3. The display substrate according to
4. The display substrate according to
5. The display substrate according to
wherein a ratio of a thickness of the first electrode to a distance from a top of the conductive convex to a bottom of the first electrode ranges from 1:4 to 1:2.
6. The display substrate according to
7. The display substrate according to
the triangular prism comprises a first surface parallel to the surface of the substrate, the first surface comprises a first side and a second side intersecting the first side,
a dimension of the first side is 2-10 μm,
a dimension of the second side is 1-5 μm,
a height of the triangular prism along a direction perpendicular to the substrate is 1-5 μm,
a distance between two adjacent conductive convexes in a direction of the first side is 2-10 μm, and
a distance between two adjacent conductive convexes in a direction of the second side is 2-5 μm.
8. The display substrate according to
an adhesive located between the conductive convexes, the pin is joined to the first electrode by the adhesive.
9. The display substrate according to
a thin film transistor located on the substrate; and
a first dielectric layer located on the thin film transistor,
wherein the first electrode is located on the first dielectric layer and is electrically connected to the thin film transistor.
11. The method according to
12. The method according to
patterning the dielectric material layer comprises exposing the dielectric material layer using a first mask and developing the dielectric material layer,
wherein a radiation dose of a light used for the exposure, a dimension of a light shielding portion of the first mask along a direction perpendicular to a direction in which the light shielding portion extends, and a distance between the first mask and the dielectric material layer are configured such that a diffracted light is generated at an edge of the light shielding portion during the exposure, wherein at least a portion of the diffracted light can reach a surface of the dielectric material layer located below a central portion of the light shielding portion.
13. The method according to
forming a second conductive material layer on the substrate; and
patterning the second conductive material layer to form the first electrode and the conductive convex located on the first electrode.
14. The method according to
forming an adhesive layer to cover the conductive convex and a portion of the first electrode located between the conductive convexes;
placing an electronic device on the adhesive layer and applying a force to the electronic device so that the conductive convex penetrates the adhesive layer and contacts the electronic device; and
curing the adhesive layer.
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This patent application is the National Stage Entry of PCT/CN2019/097348, filed on Jul. 24, 2019, the entire disclosure of which is incorporated herein by reference as part of the present application.
Embodiments of the present disclosure relate to a field of displaying technology, in particular, to a display substrate and a method for manufacturing the same.
Micro LED is regarded as the next-generation display technology which is most likely to replace OLED.
The advantages of micro LED include low power consumption, high brightness, ultra-high resolution and color saturation, fast response, ultra power saving, long lifetime, high efficiency, adaptability to various dimensions, seamless stitching, etc. The power consumption of micro LED is 10% of LCD and 50% of OLED, so it is suitable for wearable devices.
Embodiments of the present disclosure provide a display substrate and a method for manufacturing the same.
In one aspect of the present disclosure, a display substrate is provided. The display substrate includes: a substrate; a first electrode located on the substrate; and a conductive convex located on the first electrode. A dimension of a cross section of the conductive convex along a plane parallel to the substrate is negatively correlated to a distance from the cross section to a surface of the first electrode.
In an exemplary embodiment of the present disclosure, a ratio of a minimum dimension of a surface of a side of the conductive convex facing the substrate along a direction parallel to the substrate to a distance from the conductive convex to the first electrode ranges from 1:1 to 1:3.
In an exemplary embodiment of the present disclosure, a shape of the conductive convex is at least one selected from a group consisting of a cone, a truncated cone, and a prism.
In an exemplary embodiment of the present disclosure, the conductive convex includes a first portion and a second portion covering the first portion. An orthographic projection of the first portion on the substrate is located within an orthographic projection of the first electrode on the substrate. The second portion is in contact with the first electrode. A surface of the second portion away from the substrate is conformal to a surface of the first portion away from the substrate. The first portion is composed of a dielectric material, and the second portion is composed of a conductive material.
In an exemplary embodiment of the present disclosure, the dielectric material includes an organic material. The conductive convex further includes an inorganic material layer covering the first portion and located between the first portion and the second portion.
In an exemplary embodiment of the present disclosure, the second portion further covers a surface of the first electrode adjacent to the first portion.
In an exemplary embodiment of the present disclosure, the conductive convex is composed of a conductive material.
In an exemplary embodiment of the present disclosure, the first electrode is formed integrally with the conductive convex. A ratio of a thickness of the first electrode to a distance from a top of the conductive convex to a bottom of the first electrode ranges from 1:4 to 1:2.
In an exemplary embodiment of the present disclosure, a plurality of conductive convexes arranged in an array are disposed on each of the first electrodes.
In an exemplary embodiment of the present disclosure, the conductive convex includes a triangular prism. The triangular prism includes a first surface parallel to the surface of the substrate, the first surface includes a first side and a second side intersecting the first side. A dimension of the first side is 2-10 μm. A dimension of the second side is 1-5 μm. A height of the triangular prism along a direction perpendicular to the substrate is 1-5 μm. A distance between two adjacent conductive convexes in a direction of the first side is 2-10 μm. A distance between two adjacent conductive convexes in a direction of the second side is 2-5 μm.
In an exemplary embodiment of the present disclosure, the display substrate further includes: an electronic device located on the conductive convex; and an adhesive located between the conductive convexes. A pin of the electronic device is in contact with the conductive convex. The pin is joined to the first electrode by the adhesive.
In an exemplary embodiment of the present disclosure, the display substrate further includes: a thin film transistor located on the substrate; and a first dielectric layer located on the thin film transistor. The first electrode is located on the first dielectric layer and is electrically connected to the thin film transistor.
In an exemplary embodiment of the present disclosure, the first dielectric layer includes a first sub-dielectric layer and a second sub-dielectric layer sequentially stacked. The display substrate further includes a second electrode and a third electrode located between the first sub-dielectric layer and the second sub-dielectric layer. The second electrode is connected to a source/drain region of the thin film transistor via a first hole in the first sub-dielectric layer. The first electrode includes a first sub-electrode and a second sub-electrode. The first sub-electrode is connected to the second electrode via a second hole in the second sub-dielectric layer. The second sub-electrode is connected to the third electrode via a third hole in the second sub-dielectric layer.
In one aspect of the present disclosure, a method for manufacturing a display substrate is provided. The method includes: provide a substrate; forming a first electrode on the substrate; and forming a conductive convex on the first electrode. A dimension of a cross section of the conductive convex along a plane parallel to the substrate is negatively correlated to a distance from the cross section to a surface of the first electrode.
In an exemplary embodiment of the present disclosure, forming the conductive convex includes: forming a dielectric material layer on the first electrode; patterning the dielectric material layer to form a first portion of the conductive convex; forming a first conductive material layer on the substrate, the first electrode, and the first portion; and patterning the first conductive material layer to form a second portion of the conductive convex. An orthographic projection of the first portion on the first electrode is located within an orthographic projection of the second portion on the first electrode. The second portion covers the first electrode and is in contact with the first electrode. A surface of the second portion away from the substrate is conformal to a surface of the first portion away from the substrate.
In an exemplary embodiment of the present disclosure, before forming the first conductive material layer on the first portion, the method further includes roughening a surface of the first portion.
In an exemplary embodiment of the present disclosure, the second portion is formed to also cover a surface of the first electrode adjacent to the first portion.
In an exemplary embodiment of the present disclosure, the dielectric material layer includes a photosensitive material. Patterning the dielectric material layer includes exposing the dielectric material layer using a first mask and developing the dielectric material layer. A radiation dose of a light used for the exposure, a dimension of a light shielding portion of the first mask along a direction perpendicular to a direction in which the light shielding portion extends, and a distance between the first mask and the dielectric material layer are configured such that a diffracted light is generated at an edge of the light shielding portion during the exposure, wherein at least a portion of the diffracted light can reach a surface of the dielectric material layer located below a central portion of the light shielding portion.
In an exemplary embodiment of the present disclosure, forming the conductive convex further includes: forming an inorganic material layer on the first portion after forming the first portion and before forming the first conductive material layer. A surface of the inorganic material layer away from the substrate is conformal to a surface of the first portion away from the substrate.
In an exemplary embodiment of the present disclosure, forming the first electrode on the substrate and forming the conductive convex on the first electrode include: forming a second conductive material layer on the substrate; and patterning the second conductive material layer to form the first electrode and the conductive convex located on the first electrode.
In an exemplary embodiment of the present disclosure, the method further includes: forming an adhesive layer to cover the conductive convex and a portion of the first electrode located between the conductive convexes; placing an electronic device on the adhesive layer and applying a force to the electronic device so that the conductive convex penetrates the adhesive layer and contacts the electronic device; and curing the adhesive layer.
Adaptive and further aspects and scope will become apparent from the description provided herein. It should be understood that various aspects of this disclosure may be implemented individually or in combination with one or more other aspects. It should also be understood that the description and specific examples herein are intended for purposes of illustration only and are not intended to limit the scope of the present disclosure.
The drawings described herein are for illustrative purposes only of selected embodiments and not all possible implementations, and are not intended to limit the scope of the present application.
Corresponding reference numerals indicate corresponding parts or features throughout the several views of the drawings.
As used herein and in the appended claims, the singular form of a word includes the plural, and vice versa, unless the context clearly dictates otherwise. Thus, the references “a”, “an”, and “the” are generally inclusive of the plurals of the respective terms. Similarly, the words “comprise”, “comprises”, and “comprising” are to be interpreted inclusively rather than exclusively. Likewise, the terms “include”, “including” and “or” should all be construed to be inclusive, unless such a construction is clearly prohibited from the context. The term “example” used herein, particularly when followed by a listing of terms, is merely exemplary and illustrative and should not be deemed to be exclusive or comprehensive.
Additionally, further to be noted, when the elements and the embodiments thereof of the present application are introduced, the articles “a/an”, “one”, “the” and “said” are intended to represent the existence of one or more elements. Unless otherwise specified, “a plurality of” means two or more. The expressions “comprise”, “include”, “contain” and “have” are intended as inclusive and mean that there may be other elements besides those listed. The terms such as “first” and “second” are used herein only for purposes of description and are not intended to indicate or imply relative importance and the order of formation.
In addition, in the drawings, the thickness and area of each layer are exaggerated for clarity. It should be understood that when a layer, a region, or a component is referred to as being “on” another part, it is meant that it is directly on the another part, or there may be other components in between. In contrast, when a certain component is referred to as being “directly” on another component, it is meant that no other component lies in between.
The flow diagrams depicted herein are just one example. There may be many variations to this diagram or the steps (or operations) described therein without departing from the spirit of the disclosure. For instance, the steps may be performed in a differing order or steps may be added, deleted or modified. All of these variations are considered a part of the claimed disclosure.
Exemplary embodiments will now be described more fully with reference to the accompanying drawings.
At present, micro LED technology confronts quite a few technical challenges. The transfer and bonding of micro LED is one of the key technologies in micro LED technology.
In the related art, there are four methods for bonding micro LEDs. The first method is to use solder paste for bonding, but the solder paste needs to be heated during bonding, and heating will unnecessarily degrade the performance of the micro LED. The second method is to use anisotropic conductive adhesive for bonding, but the cost of anisotropic conductive adhesive is higher. The third method is to use die bonding welding for bonding, but applying pressure to the display substrate during bonding will adversely affect the characteristics of electronic elements such as thin film transistors in the display substrate. The fourth method is to use the way of metal directly contacting metal to transfer micro LED, but the adhesive between metal and metal is not easy to be discharged, which will reduce the contacting area between metal and metal.
Embodiments of the present disclosure provide a display substrate including conductive convexes. The conductive convex is configured to be easily connected to the micro LED, thereby reducing the manufacturing cost and improving the transferring efficiency for the micro LED.
In an exemplary embodiment of the present disclosure, referring to
It should be noted that in
In an exemplary embodiment of the present disclosure, the ratio of the area of an orthographic projection of the conductive convexes 3 on the surface of the first electrode 2 to the surface area of the first electrode 2 may be greater than 20%, for example.
In an exemplary embodiment of the present disclosure, with continued reference to
In an exemplary embodiment of the present disclosure, a shape of the conductive convex 3 may be at least one selected from a group consisting of: a cone, a truncated cone, and a prism. As an example, in
The structure of the conductive convex 3 of the embodiment of the present disclosure is specifically described below.
On the one hand, in an embodiment of the present disclosure, the conductive convex 3 includes a first portion and a second portion covering the first portion.
Specifically,
In an exemplary embodiment of the present disclosure, the first portion 31 of the conductive convex 3 may be composed of a dielectric material. In an exemplary embodiment of the present disclosure, the second portion 32 of the conductive convex 3 may be composed of a conductive material.
As an example, the dielectric material may include an organic material. Further, as an example, the organic material may include an organic resin material. For example, the organic resin material may include polyimide-type resin or acrylic-type resin.
As an example, the conductive material may include aluminum, copper, molybdenum, titanium, tungsten, or the like.
In an exemplary embodiment of the present disclosure, the material of the second portion 32 of the conductive convex 3 may be the same as or different from the material of the first electrode 2. Those skilled in the art can select according to needs or manufacturing processes, etc., and the present disclosure does not specifically limit this.
In an exemplary embodiment of the present disclosure, the material of the inorganic material layer 33 may include, for example, silicon nitride (SiNx), silicon oxide (SiOx), or the like.
On the other hand, in an embodiment of the present disclosure, the conductive convex 3 may be composed of only a conductive material.
In an embodiment of the present disclosure, the first electrode 2 and the conductive convex 3 may be integrally formed. That is, the first electrode 2 and the conductive convex 3 are made of the same material and formed by the same step.
Similar to the above embodiment, in this embodiment, for example, the conductive material may include aluminum, copper, molybdenum, titanium, tungsten, or the like.
As shown in
As an alternative embodiment, the triangular prism 3 may include a regular triangular prism, as shown in
In an exemplary embodiment of the present disclosure, the pins 41, 42 of the electronic device 4 may be in contact with the conductive convex 3. The adhesive 5 joins the pins 41 and 42 to the first electrode 2. It should be noted that the distances D4, D5 between the conductive convexes 3 in
It should be noted that the contact state between the conductive convex 3 and the pins 41, 42 shown in
In addition, when the hardness of the material of the conductive convex 3 is greater than the hardness of the material of the pins 41, 42, the top of the conductive convex 3 can penetrate into the pins 41, 42 to achieve more effective electrical and mechanical connection, as shown in
In an exemplary embodiment of the present disclosure, the electronic device 4 may include a micro LED.
As an example, the material of the adhesive 5 may include silicone-based glue, resin-based glue, photocurable glue, or the like. As an example, the photocurable glue may include an acrylate-based prepolymer (also referred as oligomer), a reactive monomer, an ultraviolet photoinitiator, or the like.
In an embodiment of the present disclosure, as shown in
In addition, with continued reference to
In an exemplary embodiment of the present disclosure, the second electrode 81 may be disposed in the same layer as the third electrode 82. That is, the second electrode 81 and the third electrode 82 may be composed of the same material and formed by the same step. As an example, the second electrode 81 may be the source/drain electrode of the thin film transistor 7. As an example, the third electrode 82 may be a wiring in the display substrate 100.
Further, In an exemplary embodiment of the present disclosure, with continued reference to
In an embodiment of the present disclosure, for example, after the electronic device 4 is bonded to the first electrode 2, the electronic device 4 can be controlled by the thin film transistor 7. As an example, when the electronic device 4 includes a micro LED, the thin film transistor 7 may control the light emission of the micro LED by the first electrode 2 and the conductive convex 3.
In an embodiment of the present disclosure, a method for manufacturing a display substrate is also provided. The display substrate manufactured according to the embodiments of the present disclosure includes conductive convexes. The conductive convex is configured to be easily connected to the micro LED, thereby being able to reduce the manufacturing cost and improve the bonding yield of the micro LED.
Similar to the description about
For some description about the conductive convex 3, reference may be made to the description about
The method for forming the conductive convex 3 is specifically described below.
On the one hand, the process for forming the conductive convex 3 according to an embodiment of the present disclosure is described with reference to
With continued reference to
In an exemplary embodiment of the present disclosure, the material of the dielectric material layer may include a photosensitive material. Further, as an example, the material of the dielectric material layer includes an organic photosensitive material.
For a material example of the dielectric material layer, reference may be made to the description about
Specifically, in the case where the material of the dielectric material layer may include a photosensitive material, as shown in
In an exemplary embodiment of the present disclosure, a radiation dose of a light L for exposing the dielectric material layer 3′, a dimension D6 of a light shielding portion M1-1 of the first mask M1 along a direction perpendicular to the direction in which the light shielding portion M1-1 extends, and a distance D7 from the first mask M1 to the dielectric material layer 3′ are configured such that a diffracted light LD is generated at an edge of the light shielding portion M1-1 during exposure.
In an exemplary embodiment of the present disclosure, at least a portion of the diffracted light LD can reach the surface of the dielectric material layer 3′ located below the central portion C of the light shielding portion M1-1. Since the intensity of the diffracted light LD incident on the corresponding portion of the dielectric material directly located below the central portion C decreases as the distance from the light shielding portion M1-1 to the corresponding portion decreases, thereby forming an unexposed portion having a convex shape of the corresponding portion of the dielectric material as indicated by the dotted line in
In an exemplary embodiment of the present disclosure, with continued reference to
In addition, in the conventional exposure process, the distance between the mask and the structure to be exposed is generally fixed. In an exemplary embodiment of the present disclosure, when the distance D7 from the first mask M1 to the dielectric material layer 3′ is larger, the radiation dose of the light L may be increased. In contrast, when the distance D7 from the first mask M1 to the dielectric material layer 3′ is smaller (even in contact state), the radiation dose of the light L can be reduced. A person skilled in the art can select according to an actual manufacturing process, which is not specifically limited herein.
As an alternative embodiment of the present disclosure, patterning the dielectric material layer 3′ may include imprinting the dielectric material layer 3′, thereby obtaining the first portion 31 of the conductive convex 3. In this embodiment, a surface of the imprint head for imprinting may have a concave structure corresponding to the convex.
The structure finally obtained by the above method is shown in
Specifically, in an exemplary embodiment of the present disclosure, referring to
In an embodiment of the present disclosure, the method for forming the first conductive material layer 3″ may include, for example, a sputtering method.
With continued reference to
Specifically, in an embodiment of the present disclosure, referring to
As an example, the patterning may use a photolithography method commonly used in the art, which is not specifically limited herein.
For a material example of the first conductive material layer, reference may be made to the description about
In an exemplary embodiment of the present disclosure, as shown in
As an alternative embodiment of the present disclosure, referring to
As an alternative embodiment of the present disclosure, the formation of the first conductive material layer 3″ by the sputtering method may cause the top of the first portion 31 of the conductive convex to collapse. To solve this problem, at least one of the following two methods can be used.
The first method is to reduce the deposition power of the first conductive material layer. That is, multiple times deposition method are used, but a small amount of conductive material is deposited each time, thereby improving the problem of collapse.
The second method is to form an inorganic material layer on the conductive convex after forming the first portion of the conductive convex and before forming the first conductive material layer. Referring to
That is, in an exemplary embodiment of the present disclosure, as shown in
In an exemplary embodiment of the present disclosure, a surface of the inorganic material layer 33 is conformal to the surface of the first portion 31 away from the substrate 1.
In an exemplary embodiment of the present disclosure, the material of the inorganic material layer 33 may include, for example, silicon nitride (SiNx), silicon oxide (SiOx), or the like.
Regarding the manufacturing method of the inorganic material layer 33, a process conventionally used in the art such as CVD can be used as long as the first portion 31 does not undergo undesirable deformation such as collapse.
On the other hand, the process for forming the conductive convex 3 according to an embodiment of the present disclosure is described with reference to
Referring to
Referring to
As an example, the patterning may include a conventional photolithography method, which is not specifically limited herein.
In an exemplary embodiment of the present disclosure, the ratio of the thickness T1 of the first electrode 2 to the distance D3 from the top of the conductive convex 3 to the bottom of the first electrode 2 may range from 1:4 to 1:2. As an example, the thickness T1 may be 0.5 μm. As an example, the range of the distance D3 may be 1-2 μm.
Similar to the above embodiment, in this embodiment, for example, the conductive material may include aluminum, copper, molybdenum, titanium, tungsten, or the like.
It should be understood that, for other detailed descriptions of the conductive convexes, reference may be made to the descriptions in the foregoing embodiments of structures, and details are not described herein again.
Further, in an exemplary embodiment of the present disclosure, the method for manufacturing a display substrate may further include steps S904 to S906, as shown by the steps within the dotted frame in the flowchart in
Referring to
More specifically, in an exemplary embodiment of the present disclosure, when the pins 41, 42 of the electronic device 4 are joined to the first electrode 2 through the adhesive layer 5, a mass transfer technique is used to simultaneously transfer a plurality of electronic devices 4 to the adhesive layer 5 (for example, resin material). The pins 41 and 42 of the electronic device 4 are in contact with the conductive convexes 3. At this time, the pins 41, 42 of the electronic device 4 enter into the resin material.
It should be noted that the mass transfer technique refers to simultaneously transfer a large number of electronic devices to the structure described above with reference to
It should be noted that the contact state between the conductive convexes 3 and the pins 41, 42 shown in
In addition, when the hardness of the material of the conductive convex 3 is greater than the hardness of the material of the pins 41, 42, the top of the conductive convex 3 can be penetrate into the pins 41, 42 to achieve more effective electrical and mechanical connection, as shown in
In step S906, the adhesive layer 5 is cured. As an example, the material of the adhesive layer 5 may include resin. The resin may contain a solvent, for example.
In an exemplary embodiment of the present disclosure, curing may be performed using a commonly used thermal curing process. For example, the resin material is heated to cure the resin material. It should be noted that since the resin material is doped with a solvent, when heating, these solvents evaporate, thereby curing the resin material. As an example, the temperature of heating may be about 140° C.
It should be understood that, when curing the resin material, the surface tension of the resin material will drive the electronic device 4 to be pressed down. In addition, due to the downward pressure exerted by the electronic device 4, the top of the conductive convex 3 pierces the resin material wrapped around the top thereof, thereby achieving electrical connection between the electronic device 4 and the first electrode 2. In addition, as an example, when the material hardness of the pins 41 and 42 of the electronic device 4 is less than that of the conductive convex 3, the top of the conductive convex 3 is finally penetrated into the pins 41 and 42 under the aforementioned tension, thereby the electrical connection between the electronic device 4 and the first electrode 2 is further guaranteed. Moreover, after the resin material is cured, the firmness of the electrical connection is also ensured.
In addition, as an alternative embodiment of the present disclosure, after the substrate is formed and before the first electrode is formed, the method for manufacturing the display substrate may further include steps S2301 to S2307, as shown in the flowchart in
Referring to
More specifically, forming the thin film transistor 6 may include: forming a buffer layer 61 on the substrate 1; forming an active layer material layer on the buffer layer 61; patterning the active layer material layer to form the active layer 62; forming an insulating layer 63 on the buffer layer 61 and the active layer 62; forming a gate material layer on the insulating layer 63; and patterning the gate material layer to form the gate layer 64.
Next, in step S2302, a first sub-dielectric layer is formed. Specifically, the first sub-dielectric layer 71 is formed on the insulating layer 63 and the gate layer 64. As an example, the first sub-dielectric layer 71 may be an interlayer insulating layer.
In step S2303, a first hole is formed in the first sub-dielectric layer. Specifically, a first hole 711 exposing the source/drain region of the thin film transistor 6 (i.e., exposing the active layer 62) is formed in the first sub-dielectric layer 71 through processes such as exposure, development, and etching.
In step S2304, a third conductive material layer is formed. Specifically, a third conductive material layer is formed on the first sub-dielectric layer 71.
In step S2305, the second electrode and the third electrode are formed. Specifically, the third conductive material layer is patterned to form the second electrode 81 and the third electrode 82.
In an exemplary embodiment of the present disclosure, as an example, the second electrode 81 may be the source/drain electrode of the thin film transistor 7. The second electrode 81 may be connected to the active layer 62 of the thin film transistor 6 via the first hole 711. As an example, the third electrode 82 may be a wiring in the display substrate 100.
Then, in step S2306, a second sub-dielectric layer is formed. Specifically, the second sub-dielectric layer 72 is formed on the first sub-dielectric layer 71, the second electrode 81 and the third electrode 82. As an example, the second sub-dielectric layer 72 may be a passivation layer or a planarization layer.
In step S2307, a second hole and a third hole are formed in the second sub-dielectric layer. Specifically, the second sub-dielectric layer 72 is patterned to form the second and the third holes 721 and 722 in the second sub-dielectric layer 72. In this embodiment, the second hole 721 exposes the second electrode 81 and the third hole exposes the third electrode 82.
Furthermore, in an exemplary embodiment of the present disclosure, the first electrode 2 may include a first sub-electrode 21 and a second sub-electrode 22. The first sub-electrode 21 is connected to the second electrode 81 via the second hole 721 in the second sub-dielectric layer 72. The second sub-electrode 22 is connected to the third electrode 82 via the third hole 722 in the second sub-dielectric layer 72. As an example, the first electrode 2 may be a bonding pad used to bond the electronic device 4.
In an embodiment of the present disclosure, for example, after the electronic device 4 is bonded to the first electrode 2, the electronic device 4 can be controlled by the thin film transistor 7. As an example, when the electronic device 4 includes a micro LED, the thin film transistor 7 may control the light emission of the micro LED via the first electrode 2 and the conductive convex 3.
Regarding the specific process used for patterning, those skilled in the art may use conventional processes such as exposure, development, and etching, which will not be repeated here.
The foregoing description of the embodiment has been provided for purpose of illustration and description. It is not intended to be exhaustive or to limit the application. Even if not specifically shown or described, individual elements or features of a particular embodiment are generally not limited to that particular embodiment, are interchangeable when under a suitable condition, can be used in a selected embodiment and may also be varied in many ways. Such variations are not to be regarded as a departure from the application, and all such modifications are included within the scope of the application.
Zhang, Feng, Yuan, Guangcai, LV, Zhijun, Wang, Libo, Li, Haixu, Liu, Wenqu, Dong, Liwen, Cui, Zhao, Song, Xiaoxin, Meng, Detian
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