Aspects of this disclosure relate to an impedance transformation circuit for use in an amplifier, such as a low noise amplifier. The impedance transformation circuit includes a matching circuit including a first inductor. The impedance transformation circuit also includes a second inductor. The first and second inductors are magnetically coupled to each other to provide negative feedback to linearize the amplifier.

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Patent
   11870402
Priority
Dec 30 2015
Filed
Jan 08 2021
Issued
Jan 09 2024
Expiry
Mar 22 2038
Extension
455 days
Inventors
Wallis, Le…
Assg.orig
Skyworks S…
Assg.curr
Skyworks S…
Entity
unknown
Referenced by
0
References
355
Maint.:
currently ok
CROSS-REFERENCE TO R…
BACKGROUND
Technical Field
Description of Relat…
SUMMARY OF CERTAIN I…
BRIEF DESCRIPTION OF…
DETAILED DESCRIPTION…
12. A method of radio frequency signal amplification, the method comprising:
receiving a radio frequency signal at a first inductor, the first inductor in series with a second inductor that is implemented in a first metal layer of a semiconductor die;
amplifying the radio frequency signal with an amplification circuit; and
providing negative feedback to linearize the amplification circuit with a third inductor magnetically coupled to the second inductor, the third inductor implemented in a second metal layer of the semiconductor die, and the second metal layer is conductively connected to the first metal layer.
1. A radio frequency device comprising:
a first inductor that receives a radio frequency signal and a second inductor in series with the first inductor, the second inductor implemented in a first metal layer of a semiconductor die;
an amplification circuit in communication with the second inductor, the amplification circuit amplifies the radio frequency signal; and
a third inductor magnetically coupled to at least the second inductor to provide negative feedback to linearize the amplification circuit, the third inductor implemented in a second metal layer of the semiconductor die, and the second metal layer is conductively connected to the first metal layer.
18. A semiconductor die for a front end system, the semiconductor die comprising:
a first inductor;
a second inductor arranged in series with the first inductor, the second inductor implemented in a first metal layer of the semiconductor die;
an amplification circuit that receives a radio frequency signal by way of the first inductor and second inductors, the amplification circuit configured to amplify the radio frequency signal; and
a third inductor magnetically coupled to the second inductor to provide negative feedback to linearize the amplification circuit, the third inductor implemented in a second metal layer of the semiconductor die, the second metal layer is conductively connected to the first metal layer, and the semiconductor die is a single semiconductor-on-insulator die.
2. The radio frequency device of claim 1 wherein the first, second and third inductors are on a common semiconductor-on-insulator die.
3. The radio frequency device of claim 1 further comprising a bias circuit configured to provide a bias signal to the amplification circuit at a node between the first and second inductors.
4. The radio frequency device of claim 3 wherein the amplification circuit includes a first transistor and a cascode transistor arranged in series with the first transistor, the first transistor configured to receive the bias signal by way of the second inductor to thereby bias to the first transistor, and the cascode transistor configured to receive a second bias signal from the bias circuit to thereby bias the cascode transistor.
5. The radio frequency device of claim 1 wherein the second inductor and the third inductor are interleaved with each other in physical layout.
6. The radio frequency device of claim 1 further including a direct current blocking capacitor in communication with the first inductor, the direct current blocking capacitor provides the radio frequency signal to the amplification circuit by way of the first inductor.
7. The radio frequency device of claim 1 wherein the third inductor is electrically connected between a terminal of a transistor of the amplification circuit and ground.
8. The radio frequency device of claim 1 wherein the amplification circuit includes a common source amplifier and a cascode transistor arranged in series with the common source amplifier.
9. The radio frequency device of claim 1 wherein the amplification circuit includes a common emitter amplifier and a cascode transistor arranged in series with the common emitter amplifier.
10. The radio frequency device of claim 1 wherein the second and third inductors are wound around a common magnetic core.
11. The radio frequency device of claim 1 wherein the amplification circuit includes a common source amplifier, and the second inductor is a source degeneration inductor.
13. The method of claim 12 wherein the first inductor is non-concentric with the second inductor in physical layout.
14. The method of claim 12 wherein the first inductor, the second inductor, the third inductor, and the amplification circuit are on a single semiconductor-on-insulator die.
15. The method of claim 12 further comprising biasing a transistor of the amplification circuit with a bias signal coupled between the first and second inductors.
16. The method of claim 15 further comprising biasing a cascode transistor of the amplification circuit with a second bias signal, the cascode transistor arranged in series with the transistor.
17. The method of claim 12 further comprising interleaving the second inductor and the third inductor in physical layout.
19. The semiconductor die of claim 18 wherein the single semiconductor-on-insulator die is a silicon-on-insulator die.
20. The semiconductor die of claim 18 wherein the first inductor is non-concentric with the second inductor in physical layout.
CROSS-REFERENCE TO RELATED APPLICATION

Any and all applications for which a foreign or domestic priority claim is identified in the Application Data Sheet, or any correction thereto, are hereby incorporated by reference under 37 CFR 1.57.

BACKGROUND
Technical Field

Embodiments of this disclosure relate to electronic systems and, in particular, to impedance transformation circuits for amplifiers.

Description of Related Technology

A low noise amplifier (LNA) can receive a radio frequency (RF) signal from an antenna. The LNA can be used to boost the amplitude of a relatively weak RF signal. Thereafter, the boosted RF signal can be used for a variety of purposes, including, for example, driving a switch, a mixer, and/or a filter in an RF system.

LNAs can be included in a variety of applications, such as base stations or mobile devices, to amplify signals of a relatively wide range of frequencies. For example, a low noise amplifier (LNA) can be used to provide low noise amplification to RF signals in a frequency range of about 30 kHz to 300 GHz.

SUMMARY OF CERTAIN INVENTIVE ASPECTS

The innovations described in the claims each have several aspects, no single one of which is solely responsible for its desirable attributes. Without limiting the scope of the claims, some prominent features of this disclosure will now be briefly described.

One aspect of this disclosure is an impedance transformation circuit for use in an amplifier. The impedance transformation circuit includes a matching circuit including a first inductor. The impedance transformation circuit also includes a second inductor. The first and second inductors are magnetically coupled to each other to provide negative feedback to linearize the amplifier.

The second inductor can be configured as a degeneration inductor. For instance, the second inductor can be configured as a source degeneration inductor. Alternatively, the second inductor can be configured as an emitter degeneration inductor.

The first inductor can provide a radio frequency signal to an amplification circuit of the amplifier. The first inductor, the second inductor, and the amplification circuit of amplifier can be embodied on a single die.

The matching circuit can include a series inductor having a first end and a second end, in which the first end is configured to receive a radio frequency signal and the second end is electrically coupled to the first inductor. The matching circuit can include a shunt capacitor electrically coupled to the first end of the series inductor. Alternatively or additionally, the matching circuit can include a direct current blocking capacitor configured to provide the radio frequency signal to the series inductor.

Another aspect of this disclosure is a low noise amplifier (LNA) that includes a matching circuit including a first inductor, an amplification circuit, and a second inductor. The amplification circuit is configured to receive a radio frequency signal by way of the first inductor and to amplify the radio frequency signal. The first and second inductors are magnetically coupled to each other to provide negative feedback to linearize the LNA.

The amplification circuit can include a common source amplifier and the second inductor can be a source degeneration inductor. The amplification circuit can include a cascode field effect transistor having a source electrically connected to a drain of the common source amplifier.

The amplification circuit can include a common emitter amplifier and the second inductor can be an emitter degeneration inductor. The amplification circuit can include a cascode bipolar transistor having an emitter electrically connected to a collector of the common emitter amplifier.

The first inductor, the second inductor, and the amplification circuit of amplifier can be embodied on a single die.

The matching circuit can include a series inductor having a first end and a second end, in which the first end is configured to receive the radio frequency signal and the second end is electrically coupled to the first inductor. The matching circuit can further include a shunt capacitor electrically coupled to the first end of the series inductor. The matching circuit can include a direct current blocking capacitor configured to provide the radio frequency signal to the series inductor.

Another aspect of this disclosure is a front end system that includes a low noise amplifier and a bypass path. The low noise amplifier includes a matching circuit including a first inductor, an amplification circuit configured to receive a radio frequency signal by way of the first inductor and to amplify the radio frequency signal, and a second inductor magnetically coupled with the first inductor to provide negative feedback to linearize the low noise amplifier.

The front end system can include a multi-throw switch having at least a first throw electrically connected to the low noise amplifier and a second throw electrically connected to the bypass path. The low noise amplifier, the multi-throw switch, and the bypass path can be embodied on a single die. The multi-throw can electrically connect an input of the low noise amplifier to an antenna port in a first state, and the multi-throw switch can electrically connect the bypass path to the antenna port in a second state.

The multi-throw switch can include a third throw. The front end system can include a power amplifier, in which the third throw of the multi-throw switch is electrically coupled to the power amplifier. The low noise amplifier, the bypass path, the multi-throw switch, and the power amplifier can be embodied on a single die. The front end system can include a second multi-throw switch having at least a first throw electrically connected to the low noise amplifier and a second throw electrically connected to the bypass path. The low noise amplifier can be included in a first signal path between the multi-throw switch and the second multi-throw switch, and the bypass path can be included in a second signal path between the multi-throw switch and the second multi-throw switch.

The front end system can include an antenna.

The front end system can include one or more suitable features of the impedance transformation circuits and/or the low noise amplifiers discussed herein.

The amplification circuit can include a common source amplifier and the second inductor can be a source degeneration inductor. The amplification circuit can include a cascode field effect transistor having a source electrically connected to a drain of the common source amplifier.

The amplification circuit can include a common emitter amplifier and the second inductor can be an emitter degeneration inductor. The amplification circuit can include a cascode bipolar transistor having an emitter electrically connected to a collector of the common emitter amplifier.

The matching circuit can include a series inductor having a first end and a second end, in which the first end is configured to receive the radio frequency signal and the second end electrically coupled to the first inductor. The matching circuit can include a shunt capacitor electrically coupled to the first end of the series inductor. The matching circuit can include a direct current blocking capacitor configured to provide the radio frequency signal to the series inductor.

For purposes of summarizing the disclosure, certain aspects, advantages and novel features of the innovations have been described herein. It is to be understood that not necessarily all such advantages may be achieved in accordance with any particular embodiment. Thus, the innovations may be embodied or carried out in a manner that achieves or optimizes one advantage or group of advantages as taught herein without necessarily achieving other advantages as may be taught or suggested herein.

BRIEF DESCRIPTION OF THE DRAWINGS

Embodiments of this disclosure will now be described, by way of non-limiting example, with reference to the accompanying drawings.

FIG. 1A is a schematic diagram of a low noise amplifier that includes field effect transistors and an impedance transformation circuit according to an embodiment.

FIG. 1B is a schematic diagram of a low noise amplifier that includes bipolar transistors an impedance transformation circuit according to an embodiment.

FIG. 1C is a schematic diagram of a low noise amplifier that includes a bipolar transistor, a field effect transistor, and an impedance transformation circuit according to an embodiment.

FIG. 1D is a schematic diagram of a low noise amplifier that includes an amplification circuit and an impedance transformation circuit according to an embodiment.

FIG. 2A is a schematic diagram of a low noise amplifier system according to an embodiment.

FIG. 2B is a schematic diagram of a low noise amplifier system according to an embodiment.

FIG. 2C is a schematic diagram of a low noise amplifier system according to an embodiment.

FIG. 2D is a schematic diagram of a low noise amplifier system that includes an illustrative bias circuit according to an embodiment.

FIG. 2E is a schematic diagram of a low noise amplifier system with a bias and matching circuit according to an embodiment.

FIG. 2F is a schematic diagram of a low noise amplifier system that includes an illustrative bias and matching circuit according to an embodiment.

FIG. 3 is a Smith chart corresponding to the passive impedance network of FIG. 2A.

FIG. 4A is a schematic block diagram of front end system that includes a low noise amplifier, a bypass path, a power amplifier, and multi-throw switches according to an embodiment.

FIG. 4B is a schematic block diagram of front end system that includes a plurality of antenna ports according to an embodiment.

FIG. 4C is a schematic block diagram of front end system that includes a bypass path and low noise amplifier according to an embodiment.

FIG. 4D is a schematic block diagram of front end system that includes a bypass path, ports connectable to a radio frequency signal path such as a transmit path, and low noise amplifier according to an embodiment.

FIG. 4E is a schematic block diagram of front end system with an antenna port coupled to a switch and a low noise amplifier according to an embodiment.

FIG. 4F is a schematic block diagram of front end system according to another embodiment.

FIG. 4G illustrates a physical layout of magnetically coupled inductors of a low noise amplifier according to an embodiment.

FIGS. 5A and 5B are schematic block diagrams of illustrative wireless communication devices that include low noise amplifiers and/or front end systems in accordance with certain embodiments.
DETAILED DESCRIPTION OF CERTAIN EMBODIMENTS

The following detailed description of certain embodiments presents various descriptions of specific embodiments. However, the innovations described herein can be embodied in a multitude of different ways, for example, as defined and covered by the claims. In this description, reference is made to the drawings where like reference numerals can indicate identical or functionally similar elements. It will be understood that elements illustrated in the figures are not necessarily drawn to scale. Moreover, it will be understood that certain embodiments can include more elements than illustrated in a drawing and/or a subset of the elements illustrated in a drawing. Further, some embodiments can incorporate any suitable combination of features from two or more drawings.

There are several performance parameters for any given amplifier design to satisfy simultaneously. Supply current for an amplifier is often pre-determined. In such circumstances, there are relatively few variables that can be manipulated to set the overall behavior of the circuit. This disclosure provides one more controlling variable to set the overall performance of the circuit. In particular, linearity can be improved by implementing features of this disclosure.

In a low noise amplifier (LNA), linearity can be a significant parameter. It can be desirable for an LNA to have a relatively high linearity. Linearity can be measured by a 1 dB compression point and/or a 3rd order intermodulation. Accordingly, a 1 dB compression point and/or a 3rd order intermodulation of an LNA can be significant. Specifications for LNAs and other circuits are specifying higher linearity with lower supply current. This trend is expected to continue. Such specifications can be challenging to meet while also meeting other performance specifications. Accordingly, there is a need for LNAs with improved linearity.

This disclosure provides a new way to control the input match of an LNA, and in such a way the linearity of the LNA can be improved. For instance, using the principles and advantages discussed herein, the 1 dB compression point and 3rd order intermodulation can be improved. This disclosure provides circuits that can extend inductively degenerated amplifier concepts such that both self and mutual inductance effects can improve linearity of an LNA, instead of only self-inductive degeneration.

An LNA can include an inductively degenerated common source or common emitter amplifying device. The inductive degeneration can linearize such a circuit. In addition, the degeneration inductor can set the input impedance of the circuit in conjunction with the size and bias current of the amplifying device. A series input matching inductor at the input can be included to achieve a desired input impedance and obtain a relatively good input match.

Aspects of this disclosure relate to an LNA with magnetic coupling between a degeneration inductor (e.g., a source degeneration inductor or an emitter degeneration inductor) and a series input inductor. These magnetically coupled inductors can in effect provide a transformer, with a primary winding in series with the input and a secondary winding electrically connected where the degeneration inductor is electrically connected to the amplifying device (e.g., at the source of a field effect transistor amplifying device or at the emitter of a bipolar transistor amplifying device). The phase of the magnetic coupling can be significant. This phase is indicated by the dot notation in the accompanying drawings. With the magnetically coupled inductors disclosed herein, inductively degenerated amplifier concepts can be extended by using both self and mutual inductance.

In the LNAs discussed herein, several effects can occur at the same time. Typically, metal oxide semiconductor (MOS) LNAs have a voltage gain from the input of the circuit to a gate of the amplifying device. This voltage gain can degrade the 3rd order intermodulation (IIP3) performance of the circuit. An attenuator is typically not used to reduce signal amplitude because such an attenuator can undesirably degrade the noise performance of the circuit. The LNAs discussed herein can include a negative feedback circuit. An amplifying device of an LNA can receive a radio frequency (RF) signal by way of a first inductor that is magnetically coupled to a degeneration inductor. The first inductor can have a first end configured to receive the RF signal and a second end electrically coupled to the amplifying device. The impedance looking into a node at the first end of the first inductor (e.g., node n2 in FIGS. 2A to 2F) can be increased and the voltage at a node at the second end of the first inductor (e.g., node n3 in FIGS. 2A to 2F) can be decreased. This may not reduce the gain, but the effect can allow the circuit to be scaled differently, with a larger amplifying device. The higher input impedance can also allow the inductance of the input match inductor that provides the RF signal to the first inductor to have a lower value. This can be advantageous when an on chip match inductor is implemented, as the Q of such devices can be limited, and the effective series impedance of the input matching inductor can degrade the noise performance of the LNA. For instance, in one implementation, the input match inductor value is approximately half the value it would otherwise be without the magnetically coupled inductors. While the circuits discussed herein may not give the absolutely best possible noise match, the magnetically coupled inductors can allow the input match inductor to have a lower inductance and thereby recover at least some of the noise performance. The negative feedback provided by magnetically coupled inductors discussed herein can provide an amplifier with increased linearity.

One aspect of this disclosure is an impedance transformation circuit for use in an amplifier. The impedance transformation circuit includes a matching circuit including a first inductor. The impedance transformation circuit also includes a second inductor. The first and second inductors are magnetically coupled to each other to provide negative feedback to linearize the amplifier.

The second inductor can be a degeneration inductor, such as a source degeneration inductor or an emitter degeneration inductor. The first inductor can provide a radio frequency signal to an amplification circuit of the amplifier. The first inductor, the second inductor, and the amplification circuit of amplifier can be embodied on a single die.

The matching circuit can further include a series inductor having a first end and a second end, in which the first end is configured to receive a radio frequency signal and the second end is electrically coupled to the first inductor. The matching circuit can further include a shunt capacitor electrically coupled to the first end of the series inductor and/or a direct current (DC) blocking capacitor configured to provide the radio frequency signal to the series inductor.

Another aspect of this disclosure is a low noise amplifier (LNA). The LNA includes a matching circuit including a first inductor, an amplification circuit configured to receive a radio frequency signal by way of the first inductor and to amplify the radio frequency signal, and a second inductor. The first and second inductors are magnetically coupled to each other to provide negative feedback to linearize the LNA.

The amplification circuit can include a common source amplifier or a common emitter amplifier. A cascode transistor can be arranged in series with either of these amplifiers. Such a cascode transistor can be a common drain amplifier or a common base amplifier. The second inductor can be a source degeneration inductor or an emitter degeneration inductor.

The first inductor, the second inductor, and the amplification circuit of amplifier are can be embodied on a single die. The matching circuit can further include a series inductor having a first end and a second end, in which the first end is configured to receive the radio frequency signal and the second end is electrically coupled to the first inductor. The matching circuit can further include a shunt capacitor electrically coupled to the first end of the series inductor and/or a direct current (DC) blocking capacitor configured to provide the radio frequency signal to the series inductor.

Another aspect of this disclosure is a front end system that includes a low noise amplifier, a bypass path, and a multi-throw switch. The low noise amplifier includes a matching circuit including a first inductor, an amplification circuit configured to receive a radio frequency signal by way of the first inductor and to amplify the radio frequency signal, and a second inductor magnetically coupled with the first inductor to provide negative feedback to linearize the amplification circuit. The multi-throw switch has at least a first throw electrically connected to the low noise amplifier and a second throw electrically connected to the bypass path.

The front end system can further include a power amplifier. The multi-throw switch can have a third throw electrically coupled to the power amplifier. The low noise amplifier, the bypass path, the multi-throw switch, and the power amplifier can be embodied on a single die.

The front end system can further include a second multi-throw switch having at least a first throw electrically connected to the low noise amplifier and a second throw electrically connected to the bypass path, in which the low noise amplifier is included in a first signal path between the multi-throw switch and the second multi-throw switch, and in which the bypass path is included in a second signal path between the multi-throw switch and the second multi-throw switch.

The multi-throw switch can electrically connect an input of the low noise amplifier to an antenna in a first state, and the multi-throw switch can electrically connect the bypass path to the antenna in a second state. The front end system can further include the antenna. The antenna can be integrated with the low noise amplifier, the bypass path, and the multi-throw switch.

The low noise amplifier, the multi-throw switch, and the bypass path can be embodied on a single die. The front end system can include a package enclosing the low noise amplifier, the multi-throw switch, and the bypass path.

In the front end system, the LNA can include any suitable combination of features of the LNAs and/or amplifiers discussed herein.

FIGS. 1A to 1D illustrate example low noise amplifier that include impedance transformation circuits with magnetically coupled inductors arranged to linearize the low noise amplifiers. And of these low noise amplifiers can be implemented in a receive path in an RF system. The low noise amplifiers can be implemented by any suitable process technology, such as silicon-on-insulator. Any combination of features of the low noise amplifiers of FIGS. 1A to 1D can be implemented as suitable.

FIG. 1A is a schematic diagram of a low noise amplifier (LNA) 10 that includes an impedance transformation circuit according to an embodiment. As illustrated, the LNA 10 includes an impedance transformation circuit and an amplification circuit. The illustrated impedance transformation circuit includes a first inductor 12 and a second inductor 14. The illustrated amplification circuit includes field effect transistors 16 and 18.

The second inductor 14 illustrated in FIG. 1A is a source degeneration inductor that can provide self-inductive degeneration. The first inductor 12 and the second inductor 14 can together provide mutual inductance effects that can improve linearity of the LNA 10. The first inductor 12 and the second inductor 14 can together function as a transformer, with a primary winding in series with a gate of the field effect transistor 16 and a secondary winding electrically connected at the source of the field effect transistor 16. As illustrated, the first inductor 12 is magnetically coupled with the second inductor 14. Accordingly, these inductors can provide negative feedback to linearize the LNA 10. The dot notation in FIG. 1A indicates the phase of magnetic coupling between the first inductor 12 and the second inductor 14.

The amplification circuit illustrated in FIG. 1A includes a common source amplifier 16 and a common gate amplifier 18. An RF input signal RF_IN can be provided to the gate of the common source amplifier 16 by way of the first inductor 12. As illustrated, the common gate amplifier 18 is arranged in series with the common source amplifier 16. Accordingly, the common gate amplifier 18 can be referred to as a cascode transistor or a cascode field effect transistor. A bias circuit can provide a bias signal BIAS to the gate of the common gate amplifier 18. The common gate amplifier 18 can provide an RF output signal RF_OUT.

FIG. 1B is a schematic diagram of a low noise amplifier 10′ that includes an impedance transformation circuit according to an embodiment. The low noise amplifier 10′ of FIG. 1B is similar to the low noise amplifier 10 of FIG. 1A, except that the amplification circuit in FIG. 1B is implemented by bipolar transistors instead of field effect transistors. As illustrated in FIG. 1B, the amplification circuit includes bipolar transistors 22 and 24. The amplification circuit of FIG. 1B includes a common emitter amplifier 22 in series with a common base amplifier 24. The second inductor 14 of FIG. 1B is an emitter degeneration inductor.

FIG. 1C is a schematic diagram of a low noise amplifier 10″ that includes an impedance transformation circuit according to an embodiment. An amplification circuit of an LNA can include a bipolar transistor and a field effect transistor. The bipolar transistor and the field effect transistor of such an LNA can be arranged in a stack. FIG. 1C illustrates an example of an LNA 10″ that includes a bipolar transistor and a field effect transistor arranged in a stack. As illustrated in FIG. 1C, the LNA 10″ includes a bipolar transistor 22 arranged as a common emitter amplifier and a cascode filed effect transistor 18 arranged as a common gate amplifier. Alternatively, a low noise amplifier can include a common source amplifier and a common base amplifier arranged in a stack.

FIG. 1D is a schematic diagram of a low noise amplifier 10′″ that includes an impedance transformation circuit according to an embodiment. The amplification circuits shown in FIGS. 1A to 1C are example amplification circuits that can be implemented in connection with an impedance transformation circuit that includes magnetically coupled inductors that provide negative feedback to linearize an LNA. FIG. 1D shows that the first inductor 12 and the second inductor 14 can be implemented in connection with any suitable amplification circuit, as shown by amplification circuit 26. The amplification circuit 26 can be implemented by the amplification circuit of FIG. 1A, the amplification circuit of FIG. 1B, the amplification circuit of FIG. 1C, or any other suitable amplification circuit.

FIGS. 2A, 2B, and 2C are schematic diagrams of low noise amplifier systems that include low noise amplifiers according to certain embodiments. These LNAs include different input matching circuits. Any of the principles and advantages of these matching circuits can be implemented in connection with any of the amplifiers discussed herein as appropriate.

FIG. 2A is a schematic diagram of a low noise amplifier system 30 that includes an LNA and a bias circuit 32. The LNA illustrated in FIG. 2A includes a matching circuit, an amplification circuit, and a degeneration inductor. The amplification circuit of this LNA corresponds to the amplification circuit of the LNA 10 of FIG. 1A. It will be understood that any of the principles and advantages discussed with reference to FIGS. 2A to 2C can be implemented in connection with other suitable amplification circuits, such as the amplification circuit of the LNA 10′ of FIG. 1B and/or the amplification circuit 26 of the LNA 10″ of FIG. 1C. In FIG. 2B, the inductors 12 and 14 are magnetically coupled to each other and can function as discussed above.

The matching circuit illustrated in FIG. 2A includes the first inductor 12, a series inductor 36, and a shunt capacitor 38. The matching circuit can provide input impedance matching for the LNA. The RF input signal RF_IN can be provided at node n1. The shunt capacitor 38 is electrically connected to the series inductor 36 at node n1. The shunt capacitor 38 can provide impedance matching at node n1. For instance, the impedance of the shunt capacitor 38 can terminate at a phase corresponding to a fundamental frequency of the RF input signal RF_IN. The RF input signal RF_IN can be provided to the amplification circuit of the LNA by way of the series inductor 36 and the first inductor 12. Magnetic coupling between the first inductor 12 and the second inductor 14 can increase the impedance at node n2. Accordingly, the impedance at node n1 can be increased by this magnetic coupling. Thus, with the increase in impedance from this magnetic coupling, the inductance of the first inductor 12 and/or the inductance of the series inductor 36 can be decreased and provide similar input matching. This can advantageously decrease the physical area of the first inductor 12 and/or the series inductor 36, which can be significant. Inductors with relatively lower inductance can also improve noise performance of the LNA.

The bias circuit 32 can provide a first bias for the common source amplifier 16 at node n2. The first bias can be provided to the gate of the common source amplifier 16 by way of the first inductor 12. In some instances, the bias circuit 32 can provide a second bias to the gate of the common gate amplifier 18. The bias circuit 32 can be implemented by any suitable bias circuit.

The low noise amplifier system 30′ of FIG. 2B is similar to the low noise amplifier system 30 of FIG. 2A, except that the matching circuit of the LNA in FIG. 2B also includes a DC blocking capacitor 39. As illustrated, the DC blocking capacitor 39 is coupled between a received RF signal and node n1. The DC blocking capacitor 39 can block DC signal components of the RF input signal RF_IN from being provided to node n1.

The low noise amplifier system 30″ of FIG. 2C is similar to the low noise amplifier system 30′ of FIG. 2B, except that the matching circuit of the LNA in FIG. 2C does not include the shunt capacitor 38.

FIG. 2D is schematic diagram of low noise amplifier system 30′″ that includes an example bias circuit according to an embodiment. The bias circuit of FIG. 2D is an example of the bias circuit 32 of FIGS. 2A to 2C. The bias circuit can include a current mirror to provide a bias signal to an amplification circuit of an LNA. As illustrated in FIG. 2D, the bias circuit includes transistors 61 and 62, and a biasing element 63, such as a resistor. The bias circuit is configured to provide a bias voltage to the transistor 16 by way of the biasing element 63. The biasing input BIAS_IN can be a current provided by a current source.

FIG. 2E is schematic diagram of low noise amplifier system 30″″ that includes a bias and matching circuit 64 coupled to an output of a low noise amplifier according to an embodiment. The bias and matching circuit 64 can include any suitable circuit elements to bias the output of the LNA and/or to provide impedance matching at the output of the LNA. The bias and matching circuit 64 can be implemented in connection with any of the LNAs discussed herein.

FIG. 2F is schematic diagram of low noise amplifier system 30′″″ that includes an example bias and matching circuit coupled to an output of a low noise amplifier according to an embodiment. The bias and matching circuit of FIG. 2F is an example of the bias and matching circuit 64 of FIG. 2E. The bias and matching circuit of 2F includes an inductor 65 and a capacitor 67. The inductor 65 can provide a bias to the output of the LNA. The capacitor 67 can provide impedance matching. Other suitable passive impedance networks can alternatively be implemented to provide biasing and impedance matching at the output of the LNA.

FIG. 3 is a Smith chart corresponding to the matching circuit and the degeneration inductor of the low noise amplifier system of FIG. 2A. This Smith chart shows how the input impedance from the starting impedance varies when the magnetically coupled inductors 12 and 14 are implemented. The arrow on this chart shows the direction for increasing magnetic coupling. Locus A shows how the impedance at node n2 of FIG. 2A varies as the coupling factor is changed between the first inductor 12 and the second inductor 14. Locus A is relatively close to the effect of adding a series resistance. Locus B is the addition of the series inductor 36, from the point where locus A crosses the 50 Ohm resistance line. The net effect is that the series inductor 36 can also be significantly smaller (e.g., in the example shown B=1 nH and C=2.7 nH at 2.5 GHz). Locus C shows the effect of the series inductor 36. Locus D shows the effect of the shunt capacitor 38.

A front end system can include circuits in signal paths between one or more antennas and a baseband system. Some front end systems can include circuits in signal paths between one or more antennas and a mixer configured to modulate a signal to RF or to demodulate an RF signal. Front end systems can process RF signals. Accordingly, front end systems can be referred to as RF front end systems.

FIGS. 4A to 4F are schematic block diagrams of front end systems according to certain embodiments. The front end systems in FIGS. 4A to 4F can be in implemented in a packaged module. The packaged module can be referred to as a front end module. Such packaged modules can include relatively low cost laminate substrate based front end module that combines switch functions with LNAs and/or power amplifiers in certain instances. Some such packaged modules can be multi-chip modules. In certain implementations, one or more of the illustrated components in any of the front end systems in FIGS. 4A to 4F can be embodied on a single die. Such a die can be manufactured using any suitable process technology. As one example, the die can be a semiconductor-on-insulator die, such as a silicon-on-insulator die. According to some implementations, one or more antennas can be integrated with any of the front end systems discussed herein.

FIG. 4A is a schematic block diagram of an RF front end system 40 according to an embodiment. The RF front end system 40 is configured to receive RF signals from an antenna 41 and to transmit RF signals by way of the antenna 41. The illustrated front end system 40 includes a first multi-throw switch 42, a second multi-throw switch 43, a receive signal path that includes an LNA 10, a bypass signal path that includes a bypass network 44, and a transmit signal path that includes a power amplifier 45. The LNA 10 includes an impedance transformation circuit that includes magnetically coupled inductors to provide negative feedback to linearize the LNA 10. The LNA 10 can include any of the principles and advantages of any of the LNAs discussed herein. The bypass network 44 can include any suitable network for matching and/or bypassing the receive signal path and the transmit signal path. The bypass network 44 can be implemented by a passive impedance network or by a conductive trace or wire. The power amplifier 45 can be implemented by any suitable power amplifier configured to amplify am RF signal for transmission via the antenna 41.

The first multi-throw switch 42 can selectively electrically connect a particular signal path to the antenna 41. The first multi-throw switch 42 can electrically connect the receive signal path to the antenna 41 in a first state, electrically connect the bypass signal path to the antenna 41 in a second state, and electrically connect the transmit signal to the antenna 41 in a third state. The second multi-throw switch 43 can selectively electrically connect a particular signal path to an input/output port of the front end system 40, in which the particular signal path is the same signal path electrically connected to the antenna 41 by way of the first multi-throw switch 42. Accordingly, second multi-throw switch 43 together with the first multi-throw switch 42 can provide signal path between the antenna 41 and the input/output port of the front end system 40.

The control and biasing block 46 can provide any suitable biasing and control signals to the front end system 40. For example, the control and biasing block 46 can provide bias signals to the LNA 10 and/or the PA 45. Alternatively or additionally, the control and biasing block 46 can also provide control signals to the multi-throw switches 42 and 43.

FIG. 4B is a schematic block diagram of an RF front end system 40′ according to an embodiment. The RF front end system 40′ of FIG. 4B is similar to the RF front end system 40 of FIG. 4A, except the multi-throw switch 42′ is configured to selectively electrically connect a particular signal path to either a first antenna 41 or a second antenna 47. The multi-throw switch 42′ can be a multi-throw, multi-pole switch.

FIG. 4C is a schematic block diagram of an RF front end system 40″ according to an embodiment. The RF front end system 40″ of FIG. 4C is similar to the RF front end system 40 of FIG. 4A, except that a transmit signal path is omitted and the multi-throw switches 42″ and 43′ each have one fewer throw. The illustrated front end system 40″ includes a receive signal path and a bypass signal path and does not include a transmit signal path.

FIG. 4D is a schematic block diagram of an RF front end system 40′″ according to an embodiment. The RF front end system 40′″ of FIG. 4D is like the RF front end system 40 of FIG. 4A, except that a power amplifier of the transmit signal path is omitted from the RF front end system 40′″. The RF front end system 40′″ includes input/output ports for coupling to throws of the multi-throw switches 42 and 43. A power amplifier external to the front end system 40′″ can be electrically connected between these input/output ports such that the power amplifier is included in the transmit signal path between the multi-throw switches 42 and 43. The power amplifier can be included in a different packaged module and/or embodied on a different die that the any or all of the illustrated elements of the RF front end system 40′″.

FIG. 4E is a schematic block diagram of an RF front end system 40″″ according to an embodiment. The RF front end system 40″″ of FIG. 4E is like the RF front end system 40″ of FIG. 4C, except that an antenna port of the RF front end system 40″″ of FIG. 4E is connected to both the LNA 10 and a switch 48. The switch 48 can selectively electrically connect the antenna port to the bypass path 44. As illustrated, the switch 48 is a single through switch. FIG. 4E illustrates that a front end module can be implemented without a multi-throw switch coupled between an antenna port and an LNA. When the switch 48 is connecting the antenna port to the bypass path 44, an enable signal provided to the LNA 10 can be de-asserted to turn off the LNA 10. This can deactivate the LNA 10 without decoupling an input of the LNA 10 from the antenna port. Without a switch coupled between an input of the LNA 10 and the antenna port, insertion loss in the LNA path can be reduced. The control and biasing circuit 46 can provide the enable signal for the LNA 10 and/or control the switch 48.

FIG. 4F is a schematic block diagram of an RF front end system 40′″″ according to an embodiment. The RF front end system 40′″″ includes a receive output port RX_OUT and a transmit input port TX_IN to connect with circuitry implemented outside of a front end module. As shown in FIG. 4F, the LNA 10 can have an input connected to an LNA input port LNA_IN and/or and output connected to an LNA output port LNA_OUT of the front end module. This can enable additional circuitry, such as a filter and/or an impedance matching circuit, to be implemented external to the front end module. FIG. 4F also illustrates that the multi-throw switch 43 and/or 43′ can be implemented external to a front end module that includes the LNA 10.

Some or all of the circuit elements of the LNAs and/or front end systems discussed above can be implemented on a single semiconductor die. FIG. 4G illustrates a physical layout of magnetically coupled inductors of a low noise amplifier according to an embodiment. As illustrated, a die 49 includes an amplification circuit 26, a first inductor 12, and a second inductor 14 that is magnetically coupled with the first inductor 12. The die 49 can also include a series inductor 36, as illustrated. The die 49 can be manufactured using any suitable process technology. As one example, the die 49 can be a semiconductor-on-insulator die, such as a silicon-on-insulator die.

The first inductor 12 and the second inductor 14 can each include one or more annular turns. The first inductor 12 and the second inductor 14 can be interleaved with each other. In some instances, the first inductor 12 and/or the second inductor 14 can be implemented in two metal layers with conductive connections between metals in the two metal layers. This can lower resistance of the metal and increase the quality factor of an inductor.

The first inductor 12 and the second inductor can be wound around a magnetic core in some instances. Alternatively, a magnetic core can be implemented around the first inductor 12 and the second inductor 14 in certain applications.

While FIG. 4G is not necessarily to scale, this drawing illustrates that the first inductor 12 and the second inductor 14 can be relatively large and can consume significant physical die area. As also illustrated, the series inductor 36 can be relatively large and can consume significant physical die area. Accordingly, reducing the inductance and thus the size of the first inductor 12 (and/or the series inductor 36 described above) can result in a significant reduction in physical area consumed by an LNA.

FIGS. 5A and 5B are schematic block diagrams of illustrative wireless communication devices that include a low noise amplifier and/or a front end system in accordance with one or more embodiments. The wireless communication device 50 can be any suitable wireless communication device. For instance, the wireless communication device can be a mobile phone such as a smart phone.

FIG. 5A is a schematic diagram of a wireless communication device 50 according to an embodiment. As illustrated, the wireless communication device 50 includes a first antenna 41, a wireless personal area network (WPAN) system 51, a transceiver 52, a processor 53, a memory 54, a power management block 55, a second antenna 56, and an RF front end system 57. Any of the LNAs and/or impedance transformation circuits discussed herein can be implemented in the WPAN system 51 and/or the RF front end system 57. The WPAN system 51 is an RF front end system configured for processing RF signals associated with personal area networks (PANs). The WPAN system 51 can be configured to transmit and receive signals associated with one or more WPAN communication standards, such as signals associated with one or more of Bluetooth, ZigBee, Z-Wave, Wireless USB, INSTEON, IrDA, or Body Area Network. In another embodiment, a wireless local area network (WLAN) system can be in place of the illustrated WPAN system, and the WLAN system can process wireless local area network signals, such as Wi-Fi signals.

FIG. 5B is a schematic diagram of a wireless communication device 50′ according to another embodiment. The illustrated wireless communication device 50′ of FIG. 5B is a device configured to communicate over a PAN. This wireless communication device can be relatively less complex than the wireless communication device 50 of FIG. 5A. As illustrated, the wireless communication device 50′ includes an antenna 41, a WPAN system 51, a transceiver 52′, a processor 53, and a memory 54. The WPAN system 51 can include LNAs and/or impedance transformation circuits in accordance with any of the principles and advantages discussed herein. In another embodiment, a wireless local area network (WLAN) system can be implemented in place of the illustrated WPAN system 51, and the WLAN system can process WLAN signals such as Wi-Fi signals.

Any of the principles and advantages discussed herein can be applied to other systems, not just to the systems described above. The elements and operations of the various embodiments described above can be combined to provide further embodiments. Some of the embodiments described above have provided examples in connection with low noise amplifiers, front end modules and/or wireless communications devices. However, the principles and advantages of the embodiments can be used in association with any other systems, apparatus, or methods that could benefit from any of the teachings herein. For instance, any of the impedance transformation circuits discussed can be implemented in any amplifier that could benefit from enhanced linearity. Any of the principles and advantages of the embodiments discussed can be used in any other systems or apparatus that could benefit from an amplifier with enhanced linearity. Any of the principles and advantages discussed herein can be implemented in RF circuits configured to process signals having a frequency in a range from about 30 kHz to 300 GHz, such as in a range from about 450 MHz to 6 GHz.

Aspects of this disclosure can be implemented in various electronic devices. Examples of the electronic devices can include, but are not limited to, consumer electronic products, parts of the consumer electronic products such as semiconductor die and/or packaged radio frequency modules, electronic test equipment, wireless communication devices, personal area network communication devices, uplink cellular devices, wireless communications infrastructure such as a base station, etc. Examples of the electronic devices can include, but are not limited to, a mobile phone such as a smart phone, a wearable computing device such as a smart watch or an ear piece, a telephone, a television, a computer monitor, a computer, a router, a modem, a hand-held computer, a laptop computer, a tablet computer, a personal digital assistant (PDA), a microwave, a refrigerator, a vehicular electronics system such as an automotive electronics system, a stereo system, a DVD player, a CD player, a digital music player such as an MP3 player, a radio, a camcorder, a camera such as a digital camera, a portable memory chip, a washer, a dryer, a washer/dryer, peripheral device, a clock, etc. Further, the electronic devices can include unfinished products.

Unless the context clearly requires otherwise, throughout the description and the claims, the words “comprise,” “comprising,” “include,” “including,” and the like are generally to be construed in an inclusive sense, as opposed to an exclusive or exhaustive sense; that is to say, in the sense of “including, but not limited to.” The word “coupled,” as generally used herein, refers to two or more elements that may be either directly coupled to each other, or coupled by way of one or more intermediate elements. Likewise, the word “connected,” as generally used herein, refers to two or more elements that may be either directly connected to each other, or connected by way of one or more intermediate elements. Additionally, the words “herein,” “above,” “below,” and words of similar import, when used in this application, shall refer to this application as a whole and not to any particular portions of this application. Where the context permits, words in the above Detailed Description of Certain Embodiments using the singular or plural number may also include the plural or singular number respectively. The word “or” in reference to a list of two or more items is generally intended to encompass all of the following interpretations of the word: any of the items in the list, all of the items in the list, and any combination of the items in the list.

Moreover, conditional language used herein, such as, among others, “can,” “could,” “might,” “may,” “e.g.,” “for example,” “such as” and the like, unless specifically stated otherwise, or otherwise understood within the context as used, is generally intended to convey that certain embodiments include, while other embodiments do not include, certain features, elements and/or states. Thus, such conditional language is not generally intended to imply that features, elements and/or states are in any way required for one or more embodiments or that one or more embodiments necessarily include logic for deciding, with or without author input or prompting, whether these features, elements and/or states are included or are to be performed in any particular embodiment.

While certain embodiments have been described, these embodiments have been presented by way of example only, and are not intended to limit the scope of the disclosure. Indeed, the novel methods, apparatus, and systems described herein may be embodied in a variety of other forms; furthermore, various omissions, substitutions and changes in the form of the methods, apparatus, and systems described herein may be made without departing from the spirit of the disclosure. For example, circuit blocks described herein may be deleted, moved, added, subdivided, combined, and/or modified. Each of these circuit blocks may be implemented in a variety of different ways. The accompanying claims and their equivalents are intended to cover any such forms or modifications as would fall within the scope and spirit of the disclosure.

INVENTORS:

Wallis, Leslie Paul

THIS PATENT IS REFERENCED BY THESE PATENTS:
Patent Priority Assignee Title
THIS PATENT REFERENCES THESE PATENTS:
Patent Priority Assignee Title
10062670, Apr 18 2016 Skyworks Solutions, Inc Radio frequency system-in-package with stacked clocking crystal
10084416, Mar 25 2016 Skyworks Solutions, Inc Apparatus and methods for overload protection of low noise amplifiers
10098229, Feb 25 2013 Murata Manufacturing Co., Ltd. Module, module component composing the module, and method of manufacturing the module
10110168, Apr 01 2016 Skyworks Solutions, Inc Multi-mode stacked amplifier
10110468, Jun 01 2016 HUAWEI TECHNOLOGIES CO , LTD System and method for semi-static traffic engineering
10171053, May 05 2016 Skyworks Solutions, Inc Apparatus and methods for power amplifiers with an injection-locked oscillator driver stage
10211795, Jul 21 2016 Skyworks Solutions, Inc Impedance transformation circuit and overload protection for low noise amplifier
10230337, Dec 30 2015 Skyworks Solutions, Inc. Impedance transformation circuit for amplifier
10231341, Apr 18 2016 Skyworks Solutions, Inc. Surface mount device stacking for reduced form factor
10256535, Apr 19 2016 Skyworks Solutions, Inc Selectively shielding radio frequency module with multi-layer antenna
10269769, Apr 18 2016 Skyworks Solutions, Inc System in package with vertically arranged radio frequency componentry
10276521, Dec 29 2016 Skyworks Solutions, Inc Front end systems and related devices, integrated circuits, modules, and methods
10283859, Apr 19 2016 Skyworks Solutions, Inc Selective shielding of radio frequency modules
10297576, Apr 18 2016 Skyworks Solutions, Inc Reduced form factor radio frequency system-in-package
10297913, May 04 2016 Skyworks Solutions, Inc Shielded radio frequency component with integrated antenna
10320058, Mar 29 2017 Inpaq Technology Co., Ltd. Portable electronic device and back cover assembly thereof
10320071, Apr 19 2016 Skyworks Solutions, Inc Methods for selectively shielding radio frequency modules
10362678, Apr 18 2016 Skyworks Solutions, Inc Crystal packaging with conductive pillars
10446524, Apr 18 2016 Skyworks Solutions, Inc. Radio frequency system-in-package with stacked clocking crystal
10454432, Dec 29 2016 Skyworks Solutions, Inc Radio frequency amplifiers with an injection-locked oscillator driver stage and a stacked output stage
10505255, Jan 30 2017 Infineon Technologies AG Radio frequency device packages and methods of formation thereof
10515924, Mar 10 2017 Skyworks Solutions, Inc Radio frequency modules
10530050, Apr 19 2016 Skyworks Solutions, Inc. Selectively shielding radio frequency module with multi-layer antenna
10535637, Apr 18 2016 Skyworks Solutions, Inc. Methods to form reduced form factor radio frequency system-in-package
10548223, Apr 18 2016 Skyworks Solutions, Inc. Surface mount device stacking for reduced form factor
10629553, Dec 29 2016 Skyworks Solutions, Inc. Front end systems with linearized low noise amplifier and injection-locked oscillator power amplifier stage
10651798, Apr 01 2016 Skyworks Solutions, Inc. Multi-mode stacked amplifier
10666205, Mar 25 2016 Skyworks Solutions, Inc. Apparatus and methods for overload protection of low noise amplifiers
10770452, Dec 30 2015 Skyworks Solutions, Inc Apparatus and methods for electrical overstress protection
10892718, Dec 30 2015 Skyworks Solutions, Inc. Impedance transformation circuit for amplifier
10931009, Apr 19 2016 Skyworks Solutions, Inc. Methods for selectively shielding radio frequency modules
10957973, Aug 24 2016 Murata Manufacturing Co., Ltd. Antenna module
11037893, Dec 29 2016 Skyworks Solutions, Inc. Selectively shielded radio frequency module with linearized low noise amplifier
11038266, May 04 2016 Skyworks Solutions, Inc. Shielded radio frequency component with integrated antenna
11043466, Mar 10 2017 Skyworks Solutions, Inc. Radio frequency modules
11049824, Oct 17 2019 Viasat, Inc Antenna apparatus with integrated antenna array and low loss multi-layer interposer
11069952, Apr 26 2017 Nokomis, Inc. Electronics card insitu testing apparatus and method utilizing unintended RF emission features
11082008, Apr 01 2016 Skyworks Solutions, Inc. Multi-mode stacked amplifier
11088112, Apr 18 2016 Skyworks Solutions, Inc. Radio frequency system-in-package with stacked clocking crystal
11223116, Jun 29 2018 Qualcomm Incorporated Glass ceramic antenna package
11380979, Mar 29 2018 Intel Corporation Antenna modules and communication devices
11451195, May 08 2019 Murata Manufacturing Co., Ltd. Amplifying apparatus
11552393, May 04 2016 Skyworks Solutions, Inc. Shielded radio frequency component with integrated antenna and related methods
11576248, Dec 29 2016 Skyworks Solutions, Inc. Front end systems with multi-mode power amplifier stage and overload protection of low noise amplifier
11682649, Mar 10 2017 Skyworks Solutions, Inc. Radio frequency modules
2293414,
4079336, Dec 22 1976 National Semiconductor Corporation Stacked transistor output amplifier
4122403, Jun 13 1977 Motorola, Inc. Temperature stabilized common emitter amplifier
4159450, May 22 1978 RCA Corporation Complementary-FET driver circuitry for push-pull class B transistor amplifiers
4821005, Dec 22 1987 AMP Incorporated Electrical circuit component assembly for circuit boards
4859967, Nov 09 1988 HARRIS CORPORATION, A CORP OF DE RF power amplifier protection
5251331, Mar 13 1992 Motorola Mobility, Inc High efficiency dual mode power amplifier apparatus
5438684, Mar 13 1992 Motorola Mobility, Inc Radio frequency signal power amplifier combining network
5500628, Jan 24 1995 CTS Corporation Double-sided oscillator package and method of coupling components thereto
5847610, Dec 05 1995 Yamaha Corporation Protection circuit for an audio amplifier
5949294, Sep 20 1996 JVC Kenwood Corporation Reference frequency source oscillator formed from first and second containers
6064249, Jun 20 1997 Texas Instruments Incorporated Lateral DMOS design for ESD protection
6188277, Aug 19 1998 Harris Corporation Power amplifier having monitoring and circuit protection
6229249, Aug 31 1998 Kyocera Corporation Surface-mount type crystal oscillator
6388546, Sep 04 1998 National Institute of Information and Communications Technology Method and apparatus for cascading frequency doublers
6388623, Apr 18 2000 Sharp Kabushiki Kaisha Antenna-integrated microwave-millimeter wave module
6392603, Oct 27 2000 Infineon Technologies AG Module antenna device
6417817, Nov 17 1999 Nokia Technologies Oy Integrated antenna ground plate and EMC shield structure
6472598, Aug 28 1998 AMKOR TECHNOLOGY SINGAPORE HOLDING PTE LTD Electromagnetic interference shield device with conductive encapsulant and dam
6549077, Feb 20 2002 United Microelectronics Corp. Integrated inductor for RF transistor
6606483, Oct 10 2000 Google Technology Holdings LLC Dual open and closed loop linear transmitter
6664864, Oct 31 2001 CTS Corporation Cavity design printed circuit board for a temperature compensated crystal oscillator and a temperature compensated crystal oscillator employing the same
6686649, May 14 2001 AMKOR TECHNOLOGY SINGAPORE HOLDING PTE LTD Multi-chip semiconductor package with integral shield and antenna
6734539, Dec 27 2000 Lucent Technologies Inc.; Lucent Technologies Inc Stacked module package
6744213, Nov 15 1999 Lam Research Corporation Antenna for producing uniform process rates
6744310, Mar 21 2001 Pioneer Corporation Power amplifying device
6850196, Jan 06 2003 VTech Telecommunications Limited Integrated inverted F antenna and shield can
6861731, Mar 02 2001 III Holdings 6, LLC Module and electronic device
6873211, Sep 10 2003 Skyworks Solutions, Inc. Multi-mode bias circuit for power amplifiers
6946919, Jan 14 2002 CTS Corporation Controllable crystal oscillator component
6977552, Nov 08 2000 Malikie Innovations Limited Impedance matching low noise amplifier having a bypass switch
6991947, Mar 22 2004 Tushar, Gheewala Hybrid semiconductor circuit with programmable intraconnectivity
7053718, Sep 25 2003 Qualcomm Incorporated Stacked RF power amplifier
7110741, Nov 27 2002 STMICROELECTRONICS FRANCE Radiofrequency unit
7123197, Dec 05 2003 ALPS Electric Co., Ltd. Miniaturized antenna-coupled module
7274546, Aug 31 2005 International Business Machines Corporation Apparatus and method for improved triggering and leakage current control of ESD clamping devices
7348854, Apr 28 2006 Scientific Components Corporation Automatic biasing and protection circuit for field effect transistor (FET) devices
7352247, Dec 02 2004 Electronics and Telecommunications Research Institute Triple cascode power amplifier of inner parallel configuration with dynamic gate bias technique
7378780, Nov 09 2005 Nihon Dempa Kogyo Co., Ltd. Surface mount type crystal oscillator
7409192, Jul 21 2005 TELEFONAKTIEBOLAGET LM ERICSSON PUBL Method and apparatus for frequency synthesis in direct-conversion transmitters
7425873, Jul 27 2005 COLLABO INNOVATIONS, INC Radio frequency amplification apparatus
7477197, Dec 29 2006 Intel Corporation Package level integration of antenna and RF front-end module
7515000, Jun 16 2004 CAVIUM INTERNATIONAL; MARVELL ASIA PTE, LTD Active bias circuit for low-noise amplifiers
7579672, Jan 26 2007 Advanced Semiconductor Engineering, Inc. Semiconductor package with electromagnetic shielding capabilities
7593204, Jun 06 2006 Qorvo US, Inc On-chip ESD protection circuit for radio frequency (RF) integrated circuits
7649722, Sep 14 2005 INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM IMEC Electrostatic discharge protected circuits
7679452, Jul 26 2005 Austriamicrosystems AG Amplifier arrangement and method
7786807, Apr 23 2009 AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE LIMITED Cascode CMOS RF power amplifier with programmable feedback cascode bias under multiple supply voltages
7881029, Jul 07 2008 Qorvo US, Inc Depletion-mode field effect transistor based electrostatic discharge protection circuit
7911269, Jan 19 2009 Qualcomm Incorporated Ultra low noise high linearity LNA for multi-mode transceiver
7952433, Nov 25 2008 SAMSUNG ELECTRO-MECHANICS, LTD ; Georgia Tech Research Corporation Power amplifiers with discrete power control
8125788, Mar 29 2006 Kyocera Corporation Circuit module and radio communications equipment, and method for manufacturing circuit module
8131251, Jun 23 2004 pSemi Corporation Integrated RF front end with stacked transistor switch
8199518, Feb 18 2010 AMKOR TECHNOLOGY SINGAPORE HOLDING PTE LTD Top feature package and method
8289084, Jun 07 2010 Renesas Electronics Corporation RF power amplifier device and operating method thereof
8310835, Jul 14 2009 Apple Inc. Systems and methods for providing vias through a modular component
8362840, Jun 03 2010 Skyworks Solutions, Inc Apparatus and methods for biasing a power amplifier
8410990, Dec 17 2007 MODULUS SYSTEMS LLC Antenna with integrated RF module
8456856, Mar 30 2009 Qualcomm Incorporated Integrated circuit chip using top post-passivation technology and bottom structure technology
8554162, Aug 03 2011 TELEFONAKTIEBOLAGET L M ERICSSON PUBL High efficiency power amplifier
8610503, Dec 17 2010 Skyworks Solutions, Inc Apparatus and methods for oscillation suppression
8626084, May 13 2010 Qualcomm Incorporated Area efficient concurrent matching transceiver
8686796, Apr 19 2011 Qualcomm Incorporated RF power amplifiers with improved efficiency and output power
8773204, Feb 14 2012 Qualcomm Incorporated Amplifier with reduced source degeneration inductance
8803615, Jan 23 2012 Qualcomm Incorporated Impedance matching circuit with tunable notch filters for power amplifier
8847689, Aug 19 2009 Qualcomm Incorporated Stacked amplifier with diode-based biasing
8912959, Oct 17 2011 Siliconware Precision Industries Co., Ltd. Packaging structure and method of fabricating the same
9000847, Aug 19 2009 Qualcomm Incorporated Digital tunable inter-stage matching circuit
9019010, May 22 2012 Qorvo US, Inc Integrated stacked power amplifier and RF switch architecture
9219445, Dec 28 2012 pSemi Corporation Optimization methods for amplifier with variable supply power
9225303, Jul 11 2014 Nuvoton Technology Corporation Method and apparatus for Class AB audio amplifier output stage voltage protection
9343817, Mar 15 2011 Intel Corporation Conformal mm-wave phased array antenna with increased scan coverage
9369087, Jun 23 2004 pSemi Corporation Integrated RF front end with stacked transistor switch
9595926, Jul 29 2014 Skyworks Solutions, Inc Apparatus and methods for overdrive protection of radio frequency amplifiers
9660609, Jul 07 2015 Skyworks Solutions, Inc Devices and methods related to stacked duplexers
9680416, Jun 23 2004 pSemi Corporation Integrated RF front end with stacked transistor switch
9691710, Dec 04 2015 CYNTEC CO., LTD; CYNTEC CO , LTD Semiconductor package with antenna
9743522, Sep 26 2012 Apple Inc Printed circuit board with compact groups of devices
9786613, Aug 07 2014 Qualcomm Incorporated EMI shield for high frequency layer transferred devices
9825597, Dec 30 2015 Skyworks Solutions, Inc Impedance transformation circuit for amplifier
9831414, Jun 19 2012 Daishinku Corporation Surface mounted piezoelectric vibrator
9838047, Mar 08 2010 Intel Corporation Radio-frequency transmitter and amplifier
9871007, Sep 25 2015 Intel Corporation Packaged integrated circuit device with cantilever structure
9887454, Jul 29 2013 Murata Manufacturing Co., Ltd. Antenna-integrated wireless module and method for manufacturing antenna-integrated wireless module
9918386, Apr 18 2016 Skyworks Solutions, Inc Surface mount device stacking for reduced form factor
20020053947,
20020067205,
20020153570,
20040207021,
20040238857,
20040252064,
20050045729,
20050078038,
20050122644,
20050184626,
20050269659,
20050272399,
20060006950,
20060245308,
20070010300,
20070046376,
20070070564,
20070075693,
20070109697,
20070138629,
20070164907,
20070273445,
20080030282,
20080061419,
20080084677,
20080158063,
20080232010,
20080239597,
20080239599,
20080291115,
20090027741,
20090091904,
20090108431,
20090163159,
20090267220,
20090295645,
20100103058,
20100117750,
20100158084,
20100202126,
20100233975,
20100237947,
20110003571,
20110018635,
20110042798,
20110043284,
20110076979,
20110084378,
20110175789,
20110273360,
20110291765,
20110292554,
20120049894,
20120062286,
20120062325,
20120074990,
20120079468,
20120092220,
20120224407,
20120262239,
20120274409,
20120313821,
20130009704,
20130056882,
20130084915,
20130093629,
20130100616,
20130162362,
20130241662,
20130331043,
20130334321,
20130342022,
20130343022,
20140003000,
20140009204,
20140015614,
20140023012,
20140042607,
20140043105,
20140062607,
20140071566,
20140085760,
20140104010,
20140124956,
20140148434,
20140151105,
20140167232,
20140175621,
20140179239,
20140184334,
20140225795,
20140232477,
20140252595,
20140253242,
20140253382,
20140256271,
20140266461,
20140266480,
20140308907,
20140348274,
20150015339,
20150015863,
20150035600,
20150056940,
20150061770,
20150091658,
20150097031,
20150097629,
20150155831,
20150162877,
20150222012,
20150249051,
20150263421,
20150270806,
20150270943,
20150303806,
20150310994,
20150333760,
20150340992,
20150364214,
20150364429,
20160013638,
20160064337,
20160079854,
20160079993,
20160087593,
20160094192,
20160099720,
20160112054,
20160128179,
20160149300,
20160164476,
20160172845,
20160226496,
20160337117,
20160365994,
20170040941,
20170117907,
20170163223,
20170194317,
20170194918,
20170201291,
20170207791,
20170232345,
20170237181,
20170278816,
20170278840,
20170279415,
20170280392,
20170288609,
20170290011,
20170301630,
20170301653,
20170301654,
20170301655,
20170301985,
20170301986,
20170302224,
20170302325,
20170303400,
20170324160,
20170324388,
20180026592,
20180138872,
20180219516,
20180226367,
20180255643,
20180286840,
20180323752,
20190007002,
20190043837,
20190097594,
20190103365,
20190181809,
20190181815,
20190198990,
20190214354,
20190223079,
20190230794,
20190237433,
20190334237,
20190341687,
20190343000,
20200058619,
20200106403,
20200279825,
20200336107,
20200357756,
20210143542,
20210217713,
20210217714,
20210273326,
20210320081,
20230111462,
20230126116,
CN101401206,
CN102237342,
CN102469051,
CN102577110,
CN102884724,
CN103050482,
CN103247581,
CN103748785,
CN104936395,
CN105409060,
CN105409116,
CN105515542,
JP2008054260,
JP2009027741,
JP2012079468,
JP2013179152,
JP2014023012,
JP2014178731,
KR1020050084978,
KR1020100059724,
KR102010062316,
KR1020120133119,
KR1020150028844,
TW201517506,
TW201603477,
TW528736,
TW577191,
WO2015015863,
WO2016189199,
WO2017184654,
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