A solid electrolytic capacitor is obtained by mounting a plurality of single plate capacitor elements within a chip by employing a stacking structure such as parallel stacking, opposing stacking, each layer-opposing stacking or closest stacking. As a result, a compact and high-capacitance element can be easily manufactured. The single plate capacitor element is preferably an element having an unfolded fan-like shape.
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15. A solid electrolytic multilayer capacitor having a cv value per unit volume, of 7.1×103 V·F/m3 or more.
4. A solid electrolytic multilayer capacitor comprising a plurality of stacked and fixed single plate capacitor elements each comprising
an anode substrate comprising a plate-like valve-acting metal having on the surface thereof an oxide dielectric film layer, wherein an edge part of the anode substrate acts as an anode part and an area of said oxide dielectric film layer where a solid electrolyte layer and an electrically conducting layer are sequentially formed acts as a cathode part, wherein the solid electrolyte layers of the single plate capacitor elements stacked are not of the same length.
3. A solid electrolytic multilayer capacitor each comprising a plurality of stacked single plate capacitor elements comprising
an anode substrate comprising a plate-like valve-acting metal having on the surface thereof an oxide dielectric film layer, wherein an edge part of the anode substrate acts as an anode part and an area of said oxide dielectric film layer where a solid electrolyte layer and an electrically conducting layer are sequentially formed acts as a cathode part, said plurality of single plate capacitor elements being stacked such that the anode parts of respective single plate capacitor elements are alternately aligned toward opposing directions, the anode parts aligned toward the same direction of alternately stacked elements are stacked and fixed on a lead frame in the anode side, and the cathode parts are stacked and fixed to one another by an electrically conducting adhesive layer, with at least one electrically conductive adhesive layer being fixed on a lead frame in the cathode side.
2. A solid electrolytic multilayer capacitor comprising two multilayer capacitor elements each comprising a plurality of stacked single plate capacitor elements comprising
an anode substrate comprising a plate-like valve-acting metal having on the surface thereof an oxide dielectric film layer, wherein an edge part of the anode substrate acts as an anode part and an area of said oxide dielectric film layer where a solid electrolyte layer and an electrically conducting layer are sequentially formed acts as a cathode part, said plurality of single plate capacitor elements are stacked such that the anode parts are stacked and fixed on a lead frame in an anode side while aligning the respective anode parts toward the same direction, the cathode parts are stacked and fixed on a lead frame in a cathode side through an electrically conducting adhesive layer to have an unfolded fan-like shape spreading out toward the distal end of the cathode part from the anode part side, the cathode parts on the electrically conducting layers of two multilayer capacitor elements are bonded and fixed through the lead frame in the cathode side to lay in different directions respective to the anode parts.
1. A solid electrolytic multilayer capacitor comprising a multilayer capacitor element comprising a plurality of single plate capacitor elements comprising
an anode substrate comprising a plate-like valve-acting metal having on the surface thereof an oxide dielectric film layer, wherein an edge part of the anode substrate acts as the anode part and an area of said oxide dielectric film layer where a solid electrolyte layer and an electrically conducting layer are sequentially formed acts as a cathode part, said plurality of single plate capacitor elements are stacked such that the anode parts are stacked and fixed on a lead flame in the anode side while aligning the respective anode parts toward the same direction, wherein in the single plate capacitor element, a thickness of a distal end portion of the cathode part is larger than a thickness in a basal portion of the cathode part, the cathode parts are stacked and fixed on a lead flame in the cathode side through an electrically conducting adhesive layer to have an unfolded fan-like shape spreading out toward the distal end of the cathode part from the anode part side, and the plate-like valve-acting metal of each single plate capacitor element in the area having said solid electrolyte layer lies almost in parallel with the lead flame in the cathode side.
5. The solid electrolytic multilayer capacitor as claimed in any one of
6. The solid electrolytic multilayer capacitor as claimed in any one of
7. The solid electrolytic multilayer capacitor as claimed in any one of
8. The solid electrolytic multilayer capacitor as claimed in any one of
9. The solid electrolytic multilayer capacitor as claimed in any one of
10. The solid electrolytic multilayer capacitor as daimed in
11. The solid electrolytic multilayer capacitor as claimed in
12. The solid electrolytic multilayer capacitor as claimed in any one of
13. The solid electrolytic multilayer capacitor as claimed in
14. The solid electrolytic multilayer capacitor as claimed in
16. The solid electrolytic multilayer capacitor as claimed in any one of
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This application is an application filed under 35 U.S.C. §111(a) claiming benefit pursuant to 35 U.S.C. §119(e)(1) of the filing date of Provisional Application No. 60/218,804 filed Jul. 18, 2000 pursuant to 35 U.S.C. §111(b).
The present invention relates to a compact and large-capacitance solid electrolytic capacitor. The present invention also relates to a solid electrolytic multilayer capacitor comprising a solid electrolytic capacitor using an organic material such as electrically conducting polymer or an inorganic material such as metal oxide, as a solid electrolyte.
To cope with the requirement for downsizing of electronic instruments, there is a demand for a solid electrolytic capacitor to be compact and have a large capacitance. For further reducing the size and increasing the capacitance of a solid electrolytic capacitor, it is necessary to reduce the size and increase the capacitance of the single plate solid electrolytic capacitor element housed therein itself and also to find a method capable of closely stacking the single plate elements within a limited size. In commercially available aluminum solid electrolytic capacitors, a solid electrolytic capacitor having a CV value per one unit volume of 7.0×103 V·F/m3 is known.
Generally, a solid electrolytic capacitor contains at least one single plate capacitor element consisting of an anode part comprising a plate-like valve-acting metal having on the surface thereof an oxide dielectric film layer, and a cathode part constructed by forming a solid electrolyte layer and an electrically conducting layer sequentially on the oxide dielectric film layer. The solid electrolytic capacitor is completed by covering and sealing the periphery of the capacitor elements with a jacket resin. For the solid electrolyte layer, an organic material such as electrically conducting polymer or an inorganic material such as metal oxide is used.
In the stacking to obtain a solid electrolytic capacitor using an electrically conducting high molecular weight compound (or also called electrically conducting polymer) as the solid electrolyte, the anode part must be bent to enable spot welding after superposing respective cathode parts one on another to lie in parallel, because the cathode part of a single plate capacitor element, where a solid electrolyte layer and an electrically conducting layer are sequentially formed, is larger in the thickness than the anode part. Therefore, concentration of stress is generated in the vicinity of the boundary between the anode part and the cathode part of the single plate capacitor element and the capacitor is disadvantageously deteriorated in the capability. In order to solve this problem, various techniques have been heretofore proposed.
For example, in order to solve the difference in level between the anode part and the cathode part, a method of filling up the space between anode parts of a plurality of single plate capacitor elements with a metal plate having a thickness corresponding to the space at the time of stacking single plate capacitor elements (see, JP-A-5-205984) (the term "JP-A" as used herein means an "unexamined published Japanese patent application"), a method of forming an insulating resin layer in the space between the anode parts and attaining the connection by a metal fine line (see, JP-A-6-29163 and JP-A-6-84716), a method of working the lead frame by dividing it into pieces corresponding to the position of each anode part (see, JP-A-4-167417) and the like are known.
As described above, for further reducing the size and increasing the capacitance of a solid electrolytic capacitor, a matter of great concern is to what degree the single plate solid electrolytic capacitor element is reduced in size and increased in capacitance and how large capacitance can be realized for the solid electrolytic capacitor by closely stacking single plate elements within a limited size (for example, a standard specification size).
More specifically, since concentration of stress is generated in the vicinity of the boundary between the anode part and the cathode part at the time of stacking single plate solid electrolytic capacitor elements, it is necessary to find a method of eliminating the difference in level and thereby preventing the concentration of stress. However, a method of eliminating the difference in level results in increase of the working step or increase in the cost such as cost for processing the material. If the working step is increased, destruction of the single plate capacitor element or deterioration of the capability increases due to the mechanical stress or the like generated during the operation, which gives rise to a problem that the yield decreases in the production of multilayer capacitors or the capacitor obtained is disadvantageously inferior in capability.
The present invention is made to solve these problems and the object of the present invention is to provide a compact and large-capacitance solid electrolytic multilayer capacitor, in which generation of the concentration of stress in the vicinity of the boundary between the anode part and the cathode part at the stacking is prevented, and thereby the capacitor is freed from the reduction of yield in the production of multilayer capacitors.
The present invention provides a solid electrolytic multilayer capacitor fabricated by stacking single plate capacitor elements. More specifically, the present invention provides:
(1) a solid electrolytic multilayer capacitor comprising a multilayer capacitor element fabricated by stacking a plurality of single plate capacitor elements each essentially consisting of an anode substrate comprising a plate-like valve-acting metal having on the surface thereof an oxide dielectric film layer, with the edge part of the anode substrate acting as the anode part; and the area exclusive of the anode part, in which a solid electrolyte layer and an electrically conducting layer are sequentially formed on the oxide dielectric film layer, acting as the cathode part; the plurality of single plate capacitor elements being stacked such that the anode parts are stacked and fixed on a lead frame in the anode side while aligning respective anode parts toward the same direction; the cathode parts are stacked and fixed on a lead frame in the cathode side through an electrically conducting adhesive layer formed thereon, to have an unfolded fan-like shape spreading out toward the distal end of the cathode part from the anode part side; and the plate-like valve-acting metal of each single plate capacitor element in the area having the solid electrolyte layer lies almost in parallel with the lead frame in the cathode side.
(2) a solid electrolytic multilayer capacitor comprising two multilayer capacitor elements each fabricated by stacking a plurality of single plate capacitor elements each essentially consisting of an anode substrate comprising a plate-like valve-acting metal having on the surface thereof an oxide dielectric film layer, with the edge part of the anode substrate acting as the anode part; and the area exclusive of the anode part, in which a solid electrolyte layer and an electrically conducting layer are sequentially formed on the oxide dielectric film layer, acting as the cathode part; the plurality of single plate capacitor elements being stacked such that the anode parts are stacked and fixed on a lead frame in the anode side while aligning respective anode parts toward the same direction; and the cathode parts are stacked and fixed on a lead frame in the cathode side through an electrically conducting adhesive layer formed thereon, to have an unfolded fan-like shape spreading out toward the distal end of the cathode part from the anode part side; the cathode parts on the electrically conducting layers of two multilayer capacitor elements being bonded and fixed through the lead frame in the cathode side to lay respective anode parts in different directions.
(3) a solid electrolytic multilayer capacitor fabricated by stacking a plurality of single plate capacitor elements each essentially consisting of an anode substrate comprising a plate-like valve-acting metal having on the surface thereof an oxide dielectric film layer, with the edge part of the anode substrate acting as the anode part; and the area exclusive of the anode part, in which a solid electrolyte layer and an electrically conducting layer are sequentially formed on the oxide dielectric film layer, acting as the cathode part; the plurality of single plate capacitor elements being stacked such that the anode parts of respective single plate capacitor elements are alternately aligned toward opposing directions; the anode parts aligned toward the same direction of alternately stacked elements are stacked and fixed on a lead frame in the anode side, and the cathode parts are stacked and fixed one on another by forming an electrically conducting adhesive layer thereon, with at least one electrically conductive adhesive layer being fixed on a lead frame in the cathode side.
(4) a solid electrolytic multilayer capacitor fabricated by stacking and fixing a plurality of single plate capacitor elements each essentially consisting of an anode substrate comprising a plate-like valve-acting metal having on the surface thereof an oxide dielectric film layer, with the edge part of the anode substrate acting as the anode part; and the area exclusive of the anode part, in which a solid electrolyte layer and an electrically conducting layer are sequentially formed on the oxide dielectric film layer, acting as the cathode part, wherein the single plate capacitor elements stacked are not the same in the length of the solid electrolyte layer. The periphery of the multilayer capacitor element is sealed by a jacket resin.
The present invention also provides a solid electrolytic capacitor in which the CV value per unit volume of one chip is 7.1×103 V·F/m3 or more and which is fabricated by stacking the above-described multilayer solid electrolytic capacitor elements to have a required capacitor chip size for enabling the housing thereof and then sealing and molding the stacking product with a jacket resin.
In the above-described solid electrolytic multilayer capacitor, an electrically conducting adhesive layer is preferably formed in the range from the distal end of the cathode part to 80% of the cathode part length and also the multilayer capacitor element is preferably obtained by stacking the plurality of single plate capacitor elements under pressure.
Furthermore, in the above-described solid electrolytic multilayer capacitor, the single plate capacitor element is preferably a single plate capacitor element where the thickness in the distal end portion of the cathode part is larger than the thickness in the basal portion of the cathode part. More specifically, a single plate capacitor element where the end part of the anode substrate comprising a plate-like valve-acting metal having on the surface thereof an oxide dielectric film layer acts as an anode part. The area exclusive of the anode part, in which a solid electrolyte layer and an electrically conducting layer are sequentially formed on the oxide dielectric film layer, acts as a cathode part, and the thickness of the distal end portion of the cathode part is larger than the thickness of the basal portion of the cathode part. In a more preferred embodiment of the single plate capacitor element, the stacking and fixing between respective cathode parts of the plurality of single plate capacitor elements and between the cathode part and a lead frame in the cathode side is performed by means of an electrically conducting adhesive layer and the thickness of the electrically conducting adhesive layer is larger in the distal end portion of the cathode part than in the basal side of the cathode part. In the above-described solid electrolytic multilayer capacitor, the solid electrolyte layer is preferably formed using an electrically conducting polymer rather than an inorganic material.
The single plate capacitor element shown in
In the solid electrolytic multilayer capacitor of the present invention, the number of sheets of single plate capacitor elements stacked is generally from 2 to 20 sheets, preferably from 2 to 12 sheets, though it depends on the shape or thickness of the single plate capacitor element, the thickness design or capability required, the stacking form (for example,
The single plate capacitor element 7 for use in the solid electrolytic multilayer capacitor is preferably a single plate capacitor element where, as shown in
The present invention is further described below.
In the present invention, in the case of obtaining a multilayer capacitor element 14 by stacking a plurality of single plate capacitor elements 7, the connection between each cathode parts and between the cathode part and the lead frame 8 in the cathode side is performed by means of an electrically conducting adhesive layer 10 (using an electrically conducting paste). The connection between respective anode parts and between the anode part 11 and the lead frame 9 in the anode side is performed by means of spot welding or laser welding.
It In the case of a stacking structure as shown in
In the case of a stacking structure shown in
An example of an embodiment of mounting two sheets of single plate capacitor elements on a lead frame to have an unfolded fan-like shape is known (see, JP-A-6-13269). However, the example is substantially different from the present invention because the purpose of the example is to form an unfolded fan-like shape is to relax the curing stress of resin at the time of sealing with a jacket resin, and the example does not refer to the stacking and fixing of the anode part on the surface of a lead frame.
In the present invention, a large number of single plate capacitor elements are contained in a predetermined dimension of the jacket resin. Therefore, when a single plate capacitor element is stacked and fixed on a lead frame in the cathode side by means of an electrically conducting paste, the electrically conducting paste is preferably coated on in an appropriate amount a specific range of the cathode area and the lead frame. Furthermore, the single plate capacitor elements are preferably stacked and fixed under pressure, whereby a multilayer capacitor element having an unfolded fan-like shape can be easily obtained.
More specifically, at the time of stacking and fixing single plate capacitor elements on a lead frame in the cathode side using an electrically conducting paste, the pressure applied is preferably from about 17 to about 420 g/cm2. Accordingly, in the case of a single plate capacitor element having a dimension of 0.3 mm (thickness)×3 mm (width)×4 mm (length), the single plate capacitor elements are stacked and fixed under a load of approximately from 2 to 50 g.
It has also been found that a multilayer capacitor element in an unfolded fan-like shape can be obtained without difficulty by forming, as shown in
The single plate capacitor element for manufacturing a solid electrolytic multilayer capacitor is described below.
In the single plate capacitor element of the present invention, as shown in
The oxide dielectric film layer 2 is formed on the surface of a pore comprising an etched valve-acting metal to give a dielectric layer having a large surface area. The oxide dielectric film layer 2 can be constructed by an oxide of a valve-acting metal such as alumina and tantalum oxide, or a sintered body thereof. Examples of the valve-acting metal for use in the present invention include aluminum, tantalum, niobium and titanium.
In the present invention, the anode substrate 1 indicates the support formed of the above-described valve-acting metal and when an oxide dielectric film layer 2 is formed on the surface thereof to manufacture a single plate capacitor, one end is referred to as the anode part 11. Before forming the oxide dielectric film layer 2, an etching treatment or the like is performed to enlarge the surface area of the anode substrate 1 and thereby increase the capacitance.
As shown in
The anode part 11 and the cathode part may be separated by providing the insulating layer 3 like a headband (circumferentially) while contacting the layer with the anode part 11. The insulating layer 3 is a layer for electrically insulating the cathode part from the anode part 11. The insulating layer 3 is formed of an insulating material and the material is not limited. Generally, for example, a heat-resistant resin may be used and a composition comprising a solvent-soluble or swellable heat-resistant resin or a precursor thereof, an inorganic powder and a cellulose-based resin (see, JP-A-11-80596) is preferably used. Specific examples thereof include polyphenylsulfone (PPS), polyethersulfone (PES), cyanic acid ester resin, fluororesin (e.g., tetrafluoroethylene, tetrafluoroethylene-perfluoroalkyl vinyl ether copolymer), polyimide and derivatives thereof. Among these, preferred are polyimide, polyethersulfone, fluororesin and precursors thereof.
The polyimide is a compound containing an imide structure in the main chain. Usually, a solution obtained by dissolving a polyamic acid as a precursor in a solvent is used and by heat-treating the solution after the coating, the imidization is attained. As described above, the material is not limited to the chemical structure of polyimide but is preferably a compound having an average molecular weight of 1,000 to 1,000,000, more preferably from 2,000 to 200,000, and capable of exhibiting excellent insulating property.
The solid electrolyte layer 4 may be formed of an electrically conducting polymer, an organic material containing tetracyanoquinodimethane (TCNQ), or an inorganic material such as metal oxide (e.g., manganese dioxide, lead dioxide), by chemical oxidation or electrolytic oxidation.
The electrically conducting layer 5 on the solid electrolyte layer 4 may be formed of carbon paste and the electrically conducting layer 6 on the electrically conducting layer 5 may be formed of an electrically conducting paste, however, the material and method therefor are not limited.
In the present invention, the electrically conducting polymer used for forming the solid electrolyte layer 4 may be an intrinsic electrically conducting polymer (see, JP-A-1-169914) or a known polymer such as π-conjugated polyaniline (see, JP-A-61-239617), polypyrrole as a 5-membered heterocyclic compound (see, JP-A-61-240625), polythiophene derivative (see, JP-A-2-15611) or polyisothianaphthene (see, JP-A-62-118511).
That is, the solid electrolyte layer 4 may be formed using an electrically conducting polymer containing at least one chemical structure selected from the group consisting of chemical structures of aniline, pyrrole, thophene, isothianaphthene and a substituted derivative thereof of forming a divalent group. In addition, a known electrically conducting polymer, namely, a polymer containing a chemical structure of benzene, p-phenylene vinylene, thienylene vinylene, naphtho[2,3-c]thiophene or a substituted derivative thereof of forming divalent group, may also be used for forming the solid electrolyte layer 4. Such an electrically conducting polymer is used in the form of an electrically conducting polymer composition containing a dopant for forming the solid electrolyte layer 4. Not only the addition of a dopant but also, for example, an organic or inorganic filler may further be used in combination.
In the case of using a polymer of a polymerizable 5-membered heterocyclic compound (hereinafter referred to as a "5-membered heterocyclic compound") such as pyrrole or thiophene, a method of dipping an anode foil in a lower alcohol and/or water-based solution of a 5-membered heterocyclic compound and then dipping it in an aqueous solution having dissolved therein an oxidizing agent and an electrolyte to cause chemical polymerization, thereby forming an electrically conducting polymer on the anode foil (see, JP-A-5-175082); a method of coating separately one after another or simultaneously 3,4-ethylenedioxy-thiophene monomer and an oxidizing agent each preferably in the form of a solution on the oxide dielectric film of a metal foil to form the layer (see, JP-A-2-15611 and JP-A-10-32145); and the like may be applied to the present invention. In addition, poly(3,4-ethylenedioxy-thiophene) doped with a specific organic sulfonic acid such as benzoquinonesulfonic acid or alicyclic sulfonic acid, disclosed in JP-A-10-32145 may also be used in the present invention.
Furthermore, for the solid electrolyte 4 in the single plate capacitor element and the solid electrolytic multilayer capacitor of the present invention, a polymer of a 3,4-ethylenedioxy-thiophene derivative represented by the following formula (I) may also be suitably used:
wherein R1 and R2 each independently represents hydrogen atom, a linear or branched, saturated or unsaturated hydrocarbon group having from 1 to 6 carbon atoms, or a substituent for forming at least one 5-, 6- or 7-membered saturated hydrocarbon ring structure containing the two oxygen elements resulting from combining of the hydrocarbon groups having from 1 to 6 carbon atoms to each other at an arbitrary position. The ring structure formed includes those having a vinylene group which may be substituted, and a phenylene structure which may be substituted.
Also, a polymer containing a chemical structure of a divalent group represented by the following formula (II) may be suitably used for forming the solid electrolyte 4;
wherein R3, R4, R5 and R6 each independently represents a monovalent group selected from the group consisting of hydrogen atom, a linear or branched, saturated or unsaturated alkyl group having from 1 to 10 carbon atoms, an alkoxy group, an alkyl ester group, a halogen atom, a nitro group, a cyano group, a primary, secondary or tertiary amino group, a trifluoromethyl group, a phenyl group and a substituted phenyl group, and the hydrocarbon chains of R3, R4, R5 and R6 may combine with each other at an optional position to form a divalent group for forming a 3-, 4-, 5-, 6- or 7-membered saturated or unsaturated hydrocarbon ring structure together with the carbon atoms to which those groups are substituted.
In formula (II), the alkyl group, the alkoxy group and the alkyl ester group represented by R3, R4, R5 and R6 and the cyclic hydrocarbon chain formed thereby may contain a carbonyl bond, an ether bond, an ester bond, an amido bond, a sulfido bond, a sulfinyl bond, a sulfonyl bond or an imino bond in any number of bonds. In formula (II), δ represents an electric charge number per the repeating unit and is a number of 0 to 1.
In the single plate capacitor element and the solid electrolytic multilayer capacitor of the present invention, however, the chemical structure is not particularly limited and the material for forming the solid electrolyte 4 usually has an electric conductivity of from 0.1 to 200 S/cm, preferably from 1 to 100 S/cm, more preferably from 10 to 100 S/cm.
As the oxidizing agent suitable for the oxidative polymerization of the 5-membered heterocyclic compound such as pyrrole and thiophenes, oxidizing agents over a wide range, such as iron(III) chloride, Fe(ClO4)3, organic acid iron(III) salt, inorganic acid iron(III) salt, alkyl persulfate, ammonium persulfate and hydrogen peroxide described in JP-A-2-15611, may be used. Examples of the organic acid in the organic acid iron(III) include an alkylsulfonic acid having from 1 to 20 carbon atoms, such as methanesulfonic acid and dodecylbenzenesulfonic acid, and an aliphatic carboxylic acid having from 1 to 20 carbon atoms. However, the use range of the oxidizing agent may be sometimes restricted by the chemical structure of the above-described monomer, the oxidizing agent, the reaction conditions and the like. For example, according to Handbook of Conducting Polymers, page 99,
The dopant contained in the electrically conducting polymer is not limited to the polymer having a π electron-conjugated structure. The dopant is usually an anion and the anion may be either a low molecular anion or a high molecular weight anion such as polymer electrolyte. Specific examples thereof include halide anion of Group 5B element, such as PF6-, SbF6- and AsF6-, halide anion of Group 3B element, such as BF4, halogen anion such as I (e.g., I3-), Br and Cl-, perhalogenate anion such as ClO4-, Lewis acid anion such as AlCl4-, FeCl4- and SnCl4-, inorganic acid anion such as NO3- and SO42-, and protonic acid anion including organic sulfonate anion such as p-toluenesulfonic acid, naphthalenesulfonic acid, alkyl-substituted naphthalenesulfonic acid having from 1 to 5 carbon atoms, CF3SO3- and CH3SO3-, and carboxylate anion such as CH3COO- and C6H5COO.
Among these, preferred are organic sulfonate anion and organic phosphate anion. In the case of the organic sulfonic acid anion, various compounds may be applied, such as aromatic sulfonate anion, aromatic polysulfonate anion, organic sulfonate anion substituted by an OH group or a carboxy group, and aliphatic organic sulfonate anion having a skeleton of adamantane or the like.
Examples of the organic sulfonic acid include benzenesulfonic acid, p-toluenesulfonic acid, methanesulfonic acid, ethanesulfonic acid, α-sulfo-naphthalene, β-sulfo-naphthalene, naphthalenedisulfonic acid and alkylnaphthalenesulfonic acid (the alkyl group is butyl, triisopropyl, di-t-butyl or the like).
Other examples include sulfoquinone compound anion having one or more sulfo-anion group and a quinone structure within the molecule (hereinafter simply referred to as "sulfoquinone anion"), anthracene sulfonate anion, naphthalene sulfonate anion, benzene sulfonate anion and xylylene disulfonate anion (including o-, p- and m-).
Examples of the basic skeleton of the sulfoquinone anion include p-benzoquinone, o-benzoquinone, 1,2-naphthoquinone, 1,4-naphthoquinone, 2,6-naphthoquinone, 9,10-anthraquinone, 1,4-anthraquinone, 1,2-anthraquinone, 1,4-5 chrysenequinone, 5,6-chrysenequinone, 6,12-chrysenequinone, acenaphtoquinone, acenaphthenequinone, carhorquinone, 2,3-bornanedione, 9,10-phenanthrenequinone and 2,7-pyrenequinone.
Among these, the sulfoquinone for use in the present invention is preferably a sulfoquinone having a skeleton of anthraquinone, 1,4-naphthoquinone or 2,6-naphthoquinone. In the case of having a skeleton of anthraquinones, examples of the sulfoquinone which can be used include anthraquinone-1-sulfonic acid, anthraquinone-2-sulfonic acid, anthraquinone-1,5-disulfonic acid, anthraquinone-1,4-disulfonic acid, anthraquinone-1,3-disulfonic acid, anthraquinone-1,6-disulfonic acid, anthraquinone-1,7-disulfonic acid, anthraquinone-1,8-disulfonic acid, anthraquinone-2,6-disulfonic acid, anthraquinone-2,3-disulfonic acid, anthraquinone-2,7-disulfonic acid, anthraquinone-1,4,5-trisulfonic acid, anthraquinone-2,3,6,7-tetrasulfonic acid, alkali metal salts thereof and ammonium salts thereof.
In the case of having a skeleton of 1,4-naphthoquinones, examples of the sulfoquinone which can be used include 1,4-naphthoquinone-5-sulfonic acid, 1,4-naphthoquinone-6-sulfonic acid, 1,4-naphthoquinone-5,7-disulfonic acid, 1,4-naphthoquinone-5,8-disulfonic acid, alkali metal salts thereof and ammonium salts thereof.
In the case of having a skeleton of 2,6-naphthoquinones, examples of the sulfoquinone which can be used include 2,6-naphthoquinone-1-sulfonic acid, 2,6-naphthoquinone-3-sulfonic acid, 2,6-naphthoquinone-4-sulfonic acid, 2,6-naphthoquinone-3,7-disulfonic acid, 2,6-naphthoquinone-4,8-disulfonic acid, alkali metal salts thereof and ammonium salts thereof.
In acidition, the sulfoquinone may also be selected from industrial dyes and examples thereof include Anthraquinone Iris R and Anthraquinone Violet RN-3RN. These industrial dyes are a useful sulfoquinone-based dopant and each may be used in the form of the above-described salt.
Furthermore, polyelectrolyte anion may also be used, such as polyacrylic acid, polymethacrylic acid, polystyrenesulfonic acid, polyvinylsulfonic acid, polyvinylsulfuric acid, poly-α-methylsulfonic acid, polyethylenesulfonic acid and polyphosphoric acid.
The dopant also includes reductant anion of known oxidizing agents capable of producing the above-described electrically conducting polymer. Examples thereof include sulfate ion as the product anion of an oxidizing agent such as alkali metal persulfates and ammonium persulfates. Other examples include dopants produced from manganese such as potassium permanganate, or from quinones such as 2,3-dichloro-5,6-dicyano-1,4-benzoquinone (DDQ) and tetra-chloro-1,4-benzoquinone, tetracyano-1,4-benzoquinone.
In the present invention, at least one of these dopants is suitably used in the electrically conducting polymer. For instance, the electrically conducting polymer contains sulfonate ion as a dopant in the range of 0.01 to 10 mol % based on all repeating units of the π-corjugated structure and the above-described sulfoquinone anion, for example, anthraquinone sulfonate anion, as another dopant in the range of 1 to 50 mol %.
The single plate capacitor element is described below.
As shown in
According to another embodiment of the present invention, in the club-shaped single plate capacitor element, the ratio S2/S1 of the thickness S1 in the basal portion of the cathode part to the maximum thickness S2 in the distal end portion is suitably from 1.1 to 5.0, more preferably from 1.3 to 3∅
An example of a method for obtaining a single plate capacitor element 7 having the shape shown in
The single plate capacitor elements may be stacked, for example, by using an electrically conducting paste on the lead frame in the cathode side of each sheet or by previously stacking two or more sheets into the unfolded fan-like shape and bonding the stacking product to the lead frame in the cathode side. The thus-obtained elements may further be stacked one on another. In addition, a method other than these may also be used. The single plate capacitor elements may be stacked on one side (see, for example,
The single plate capacitor element may not be shaped like a club but single plate capacitor elements may be stacked into an unfolded fan-like shape such that the top and bottom surfaces of the element lie almost in parallel. For obtainig a multilayer capacitor element as such, a method of increasing the thickness of the electrically conducting adhesive layer in the distal end side of the cathode part more than in the basal portion side of the cathode part may be used.
The electrically conducting adhesive layer between respective cathode parts and the electrically conducting adhesive layer between a cathode part and the lead frame in the cathode side are each preferably formed in the range from the distal end of the cathode part to 80% of the cathode part length L (see,
The plurality of single plate capacitor elements are preferably stacked while mechanically applying a pressure to give a multilayer capacitor element having an unfolded fan-type shape. More specifically, at the time of stacking a plurality of single plate capacitor elements on a lead frame in the cathode side using an electrically conducting paste, an appropriate pressure is applied to the single plate capacitor elements by means of a pressure board to control the thickness of the electrically conducting paste, whereby a predetermined unfolded fan-like shape can be formed.
At this time, when the thickness of the electrically conducting adhesive layer is gradually increased from the basal portion of the cathode part toward the distal end portion of the cathode part, the thickness in the distal end portion of the cathode part of the multilayer capacitor element becomes larger than the thickness in the basal portion of the cathode part. As a result, the multilayer capacitor element can readily have an unfolded fan-like shape. For example, as shown in
The anode part of the single plate capacitor element may be bent after the stacking of single plate capacitor elements or may be previously bent before the stacking.
For connecting an anode part to an anode part and also for connecting an anode part to the lead frame in the anode part, any method may be used, such as spot welding, laser welding and connection through an electrically conducting paste. The order of stacking the cathode parts and connecting the anode parts is not particularly limited and either may come first or these may be alternately performed. In any case, the matter of importance is to manufacture a multilayer capacitor element while preventing a large mechanical stress from being applied on the single plate capacitor element 7.
The multilayer capacitor element 14 is molded with a jacket resin 15 and a lead frame outside the jacket resin is bent along the jacket resin and used as an exterior lead 12, thereby completing a solid electrolytic multilayer capacitor 16. Examples of the jacket resin include epoxy resin and phenol resin. Examples of the constructive material for the external lead include 42 Alloy.
When single plate capacitor elements are stacked and fixed on the lead frame in the anode side while aligning the anode parts toward the same direction or when a dub-shaped single plate capacitor element is used, the multilayer capacitor element can be prevented from protruding from the jacket resin and at the same time, and the number of sheets of the single plate capacitor elements stacked can be increased to obtain a high-capacitance solid multilayer capacitor.
In the present invention, by designing the stacking structure, the solid electrolytic capacitor can be manufactured to satisfy the capacitor chip size required in the rated specification. For instance, by applying the stacking structure of the present invention, a solid electrolytic capacitor where the capacitor chip has a CV value per unit volume, of 7.1×103 V·F/m3 (or corresponding to 7.1×103 V·F/m3 or more), preferably 7.3×103 V·F/m3 or more, more preferably 7.8×103 V·F/m3 or more, can be provided.
For example, as a solid electrolytic capacitor in the rated specification of 6.3 V/100 μF, a solid electrolytic capacitor manufactured in a D-case size (0.73 cm×0.43 cm×0.29 cm (height)) can have a CV value per unit volume, of 7.1×103 V·F/m3 or more.
The present invention Is described in greater detail below by referring to the Examples, however, the present invention is by no means limited to these Examples. Unless otherwise indicated herein, all parts, percentages, ratios and the like are by weight.
In an etched foil (anode substrate 1) of aluminum (valve-acting metal) having a thickness of 90 μm, a length of 5 mm and a width of 3 mm, where an oxide dielectric film layer 2 of alumina (Al2O3) is formed on the surface, the area having a length of 2 mm at the top end and a width of 3 mm was used as the anode part 11 and the remaining area of 3 mm×3 mm was subjected to chemical forming at 13 V in an aqueous 10 mass % ammonium adipate solution to form an oxide dielectric film layer 2 on the cut end portion and thereby prepare a dielectric material. The surface of this dielectric material was impregnated with an aqueous solution prepared to contain 20 mass % of ammonium persulfate and 0.1 mass % of sodium anthraquinone-2-sulfonate (produced by Tokyo Kasei K.K.), and then the substrate was dipped in 1.2 mol/l of an isopropanol solution having dissolved therein 5 g of 3,4-ethylenedioxy-thiophene (Baytronm™ M, produced by Bayer AG). Thereafter, the substrate was taken out, left standing in an environment at 60°C C. for 10 minutes, thereby completing the oxidative polymerization, and then washed with water. By repeating the polymerization reaction treatment and the washing process each 10 times, a solid electrolyte layer 4 of an electrically conductive polymer was formed.
Subsequently, the substrate was dipped in a carbon paste tank and the paste was solidified to form an electrically conducting layer 5. Thereafter, an operation of dipping the substrate in a silver paste tank and solidifying the paste was repeated to gradually increase the thickness of the electrically conducting layer 6 toward the distal end, thereby obtaining a club-shaped single plate capacitor element 7 shown in FIG. 1. In this single plate capacitor element 7, the ratio S2/S1 between the thickness S1 in the basal portion of the cathode part and the maximum thickness S2 in the distal end thereof was 2.1.
In the manufacture of those single plate solid electrolytic capacitors different in the length of the solid electrolyte layer, the difference in the length was attained by controlling the dipping term in the oxidizing agent bath (an aqueous solution containing ammonium persulfate/sodium anthraquinone-2-sulfonate described in Example 1) and the dipping term in the monomer bath (an isopropanol solution of 3,4-ethylenedioxy-thiophene described in Example 1) used for the production of the solid electrolyte layer.
The multilayer capacitors having a stacking structure described in Examples 2 to 5 were taken as one evaluation unit and after manufacturing 30 chips (n=30) for each capacitor, the properties were evaluated by the yield (%) and the leakage current after reflow soldering test. The results obtained are shown together in Table 1.
TABLE 1 | ||||
Leakage Current after | ||||
Reflow Soldering Test | ||||
Yield | (Note 2) | |||
Stacking Structure (number | (%) | Average | Range (μA) | |
of sheets stacked) | (Note 1) | (μA) | (Note 3) | |
Example 2 | parallel (3 sheets) | 92 | 0.3 | 0.3 |
Example 3 | opposing (6 sheets) | 87 | 0.3 | 0.4 |
Example 4 | opposing (6 sheets) | 78 | 0.5 | 0.5 |
Example 5 | non-parallel (6 sheets) | 80 | 0.4 | 0.5 |
As one example for the evaluation of compactness and large capacitance, a 8-sheet solid electrolytic multilayer capacitor was manufactured according to the method of Example 3. In the manufacture of this capacitor, however, a D-case size (0.73 cm×0.43 cm×0.29 cm (height)) in the rated specification of 6.3 V was used. The CV value of the manufactured compact capacitor having large capacitance was evaluated and the results are shown in Table 2.
TABLE 2 | |||||
Average | |||||
Dimension of Element | Number of | of Capacitance | |||
(Solid Electrolyte Layer) | Sheets | per Chip | |||
Width, | Length, | Stacked, | (n = 30), μF | CV Value, | |
cm | cm | Area, cm2 | sheets | (Note 4) | 103 F · V/m3 |
0.3 | 0.41 | 0.123 | 8 | 108.1 | 7.75 |
0.35 | 0.43 | 0.1505 | 8 | 130.6 | 9.36 |
0.35 | 0.43 | 0.1505 | 6 | 99.3 | 7.12 |
According to the stacking structure of the present invention, the manufacture of a compact and large-capacitance element can be realized. For example, as a solid electrolytic capacitor in the rated specification of 6.3 V/100 μF, a solid electrolytic capacitor in a D-case size and having a CV value per unit volume, of 7.1×103 V·F/m3 or more can be easily manufactured. Also, by the stacking structure of the present invention, a multilayer capacitor element excellent in the yield and heat resistance can be obtained. Furthermore, by virtue of the improved yield, the cost for the manufacture of the capacitor can be greatly reduced.
While the invention has been described in detail and with reference to specific embodiments thereof, it will be apparent to one skilled in the art that various changes and modifications can be made therein without departing from the spirit and scope thereof.
Furuta, Yuji, Sakai, Atsushi, Nitoh, Hiroshi, Minamida, Wataru
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