A carrier head for a chemical mechanical polishing apparatus. A layer of conformable material is disposed in a recess of the carrier head to provide a mounting surface for a substrate. The conformable material may be elastic and undergo normal strain in response to an applied load. The carrier head may also include a support fixture detachably connected to a backing fixture, a retaining ring connected directly to the conformable material, and a shield ring which projects over a portion of the layer of conformable material.
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1. A carrier head for a chemical mechanical polishing apparatus, comprising: a housing;
a rigid backing fixture movably connected to the housing by a flexible member, a volume between the housing and backing fixture providing a pressurizable chamber, the backing fixture having a surface located on a side of the flexible member opposite the chamber; and a module having a rigid support fixture detachably connected to and abbutting the surface of the backing fixture, the support fixture being detachable from the backing fixture and including a recess formed therein and a layer of conformable material disposed in the recess to provide a mounting surface for a substrate.
4. The carrier head of
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This is a continuation application of U.S. application Ser. No. 08/728,688, filed Oct. 10, 1996.
The present invention relates generally to chemical mechanical polishing of substrates, and more particularly to a carrier head for a chemical mechanical polishing system.
Integrated circuits are typically formed on substrates, particularly silicon wafers, by the sequential deposition of conductive, semiconductive or insulative layers. After each layer is deposited, the layer is etched to create circuitry features. As a series of layers are sequentially deposited and etched, the outer or uppermost surface of the substrate, i.e., the exposed surface of the substrate, becomes increasingly more non-planar. This non-planar outer surface presents a problem for the integrated circuit manufacturer. If the outer surface of the substrate is non-planar, then a photoresist layer placed thereon is also non-planar. A photoresist layer is typically patterned by a photolithographic apparatus that focuses a light image onto the photoresist. If the outer surface of the substrate is sufficiently non-planar, then the maximum height difference between the peaks and valleys of the outer surface may exceed the depth of focus of the imaging apparatus, and it will be impossible to properly focus the light image onto the outer substrate surface.
It may be prohibitively expensive to design new photolithographic devices having an improved depth of focus. In addition, as the feature size used in integrated circuits becomes smaller, shorter wavelengths of light must be used, resulting in further reduction of the available depth of focus. Therefore, there is a need to periodically planarize the substrate surface to provide a substantially planar layer surface.
Chemical mechanical polishing (CMP) is one accepted method of planarization. This planarization method typically requires that the substrate be mounted to a carrier or polishing head. The exposed surface of the substrate is then placed against a rotating polishing pad. The carrier provides a controllable load, i.e., pressure, on the substrate to push it against the polishing pad. In addition, the carrier may rotate to provide additional motion between the substrate and polishing pad. A polishing slurry, including an abrasive and at least one chemically-reactive agent, is distributed over the polishing pad to provide an abrasive chemical solution at the interface between the pad and substrate. A CMP process is fairly complex, and differs from simple wet sanding. In a CMP process the reactive agent in the slurry reacts with the outer surface of the substrate to form reactive sites. The interaction of the polishing pad and abrasive particles with the reactive sites results in polishing.
An effective CMP process has a high polishing rate and generates a substrate surface which is finished (lacks small-scale roughness) and flat (lacks large-scale topography). The polishing rate, finish and flatness are determined by the pad and slurry combination, the relative speed between the substrate and pad, and the force pressing the substrate against the pad. Because inadequate flatness and finish can create defective substrates, the selection of a polishing pad and slurry combination is usually dictated by the required finish and flatness. Given these constraints, the polishing rate sets the maximum throughput of the polishing apparatus.
The polishing rate depends upon the force pressing the substrate against the pad. Specifically, the greater this force, the higher the polishing rate. If the carrier head applies a non-uniform load, i.e., if the carrier applies more force to one region of the substrate than to another, then the high pressure regions will be polished faster than the lower pressure regions. Therefore, a non-uniform load may result in non-uniform polishing of the substrate.
An additional consideration in the production of integrated circuits is process and product stability. To achieve a high yield, i.e., a low defect rate, each successive substrate should be polished under substantially similar conditions. Each substrate should be polished by approximately the same amount so that each integrated circuit is substantially identical.
In view of the foregoing, there is a need for a chemical mechanical polishing apparatus which optimizes polishing throughput, while providing the desired flatness and finish. Specifically, the chemical mechanical polishing apparatus should have a carrier head which applies a substantially uniform load to the substrate.
In one aspect, the invention is directed to an apparatus for use with a carrier head of a chemical mechanical polishing apparatus. A module has a recess, and a layer of conformable material is disposed in the recess to provide a mounting surface for a substrate. The module is detachably connected to the carrier head.
Implementations of the invention may include the following. The carrier head may have a backing fixture, and a loading mechanism may connect the backing fixture to the housing. The module may be mechanically or magnetically connected to the carrier head. The module may have a rim surrounding the recess, and the conformable material may be flush with the rim.
In another aspect, the invention is directed to a carrier head for positioning a substrate on a polishing surface in a chemical mechanical polishing apparatus. A base assembly has a recess, and a layer of conformable material is disposed in the recess to provide a mounting surface for a substrate. A retaining ring is connected to the mounting surface.
In another aspect, the carrier head has a base assembly, a layer of conformable material, and a shield ring which is connected to the base assembly and projects over a portion of the layer of conformable material.
Implementations of the invention may include the following. The retaining ring may be approximately the same thickness as the substrate. The shield ring may surround, but be thinner than, the retaining ring. An upper surface of the shield may be adjacent to the rim of the base assembly and be flush with the conformable material. The shield may be positioned to prevent the conformable material from extruding when the substrate is pressed against the polishing surface.
In another aspect, the carrier head has a base assembly, a layer of conformable material, and a chucking mechanism to attach the substrate to the mounting surface.
Implementations of the invention may include the following. The chucking mechanism may include a pump and a passageway through the layer of conformable material connecting the passageway to the mounting surface. The passageway may have a diameter such that it does not collapse if the pump applies suction to the passageway. The chucking mechanism includes an actuating mechanism, and a movable section of the base assembly may be connected to the actuating mechanism. The vertical motion of the movable section may form a pocket between a substrate and the layer of conformable material to suction the substrate to the mounting surface.
In another aspect, the invention is directed to a carrier head having a base assembly and a conformable material disposed in a recess of the base assembly. The conformable material has a durometer measurement selected to provide both elasticity and normal strain in response to an applied load.
Implementations of the invention include the following. The conformable material may have a durometer between about fifteen and twenty-five, such as about twenty-one. The conformable material may be substantially pure urethane. A sheet of non-adhesive material may be attached to the underside of the conformable material to provide the mounting surface.
Advantages of the invention include the following. The carrier head includes a conformable layer that applies a uniform load to the substrate. The conformable layer is chemically inert vis-a-vis the polishing process. The carrier head is also able to vacuum chuck the substrate to lift the substrate off the polishing pad.
Additional advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The advantages of the invention may be realized by means of the instrumentalities and combinations particularly pointed out in the claims.
The accompanying drawings, which are incorporated in and constitute a part of the specification, schematically illustrate the present invention, and together with the general description given above and the detailed description given below, serve to explain the principles of the invention.
Referring to
According to the invention CMP apparatus 20 includes a lower machine base 22 with a table top 23 mounted thereon and removable upper outer cover (not shown). Table top 23 supports a series of polishing stations 25a, 25b and 25c, and a transfer station 27. Transfer station 27 forms a generally square arrangement with the three polishing stations 25a, 25b and 25c. Transfer station 27 serves multiple functions of receiving individual substrates 10 from a loading apparatus (not shown), washing the substrates, loading the substrates into carrier heads (to be described below), receiving the substrates from the carrier heads, washing the substrates again, and finally transferring the substrates back to the loading apparatus.
Each polishing station 25a-25c includes a rotatable platen 30 on which is placed a polishing pad 32. If substrate 10 is an eight-inch (200 mm) diameter disk, then platen 30 and polishing pad 32 will be about twenty inches in diameter. Platen 30 is preferably a rotatable aluminum or stainless steel plate connected by stainless steel platen drive shaft (not shown) to a platen drive motor (not shown). For most polishing processes, the drive motor rotates platen 30 at thirty to two-hundred revolutions per minute, although lower or higher rotational speeds may be used.
Referring to
Referring again to
A slurry 50 containing a reactive agent (e.g., deionized water for oxide polishing), abrasive particles (e.g., silicon dioxide for oxide polishing) and a chemically reactive catalyzer (e.g., potassium hydroxide for oxide polishing), is supplied to the surface of polishing pad 32 by a slurry supply tube 52. Sufficient slurry is provided to cover and wet the entire polishing pad 32. Two or more intermediate washing stations 55a and 55b are positioned between neighboring polishing stations 25a, 25b and 25c. The washing stations rinse the substrates as they pass from one polishing station to another.
A rotatable multi-head carousel 60 is positioned above lower machine base 22. Carousel 60 is supported by a center post 62 and rotated thereon about a carousel axis 64 by a carousel motor assembly located within base 22. Center post 62 supports a carousel support plate 66. and a cover 68. Multi-head carousel 60 includes four carrier head systems 70a, 70b, 70c, and 70d. Three of the carrier head systems receive and hold substrates, and polish them by pressing them against the polishing pad 32 on platen 30 of polishing stations 25a-25c. One of the carrier head systems receives a substrate from and delivers the substrate to transfer station 27.
The four carrier head systems 70a-70d are mounted on carousel support plate 66 at equal angular intervals about carousel axis 64. Center post 62 allows the carousel motor to rotate the carousel support plate 66 and to orbit the carrier head systems 70a-70d, and the substrates attached thereto, about carousel axis 64.
Each carrier head system 70a-70d includes a polishing or carrier head 100. Each carrier head 100 independently rotates about its own axis, and independently laterally oscillates in a radial slot 72 formed in carousel support plate 66. A carrier drive shaft 74 connects a carrier head rotation motor 76 to carrier head 100 (shown by the removal of one-quarter of cover 68). There is one carrier drive shaft and motor for each head.
Referring to
As shown in
A bearing stop 85 anchored to the outer end one of the rails 82 prevents slide 80 from accidentally coming off the end of the rails. One of the arms of each slide 80 contains an unillustrated threaded receiving cavity or nut fixed to the slide near its distal end. The threaded cavity or nut receives a worm-gear lead screw 86 driven by a slide radial oscillator motor 87 mounted on carousel support plate 66. When motor 87 turns lead screw 86, slide 80 moves radially. The four motors 87 are independently operable to independently move the four slides along the radial slots 72 in carousel support plate 66.
A carrier head assembly or system, each including a carrier head 100, a carrier drive shaft 74, a carrier motor 76, and a surrounding non-rotating shaft housing 78, is fixed to each of the four slides. Drive shaft housing 78 holds drive shaft 74 by paired sets of lower ring bearings 88 and a set of upper ring bearings 89. Each carrier head assembly can be assembled away from polishing apparatus 20, slid in its untightened state into radial slot 72 in carousel support plate 66 and between the arms of slide 80, and there tightened to grasp the slide.
A rotary coupling 90 at the top of drive motor 186 couples two or more fluid or electrical lines 92 into two or more channels 94 in drive shaft 74. Channels 94 are used, as described in more detail below, to pneumatically power carrier head 100, to vacuum-chuck the substrate to the bottom of the carrier head and to actuate a retaining ring against the polishing pad.
During actual polishing, three of the carrier heads, e.g., those of carrier head systems 70a-70c, are positioned at and above respective polishing stations 25a-25c. Carrier head 100 lowers a substrate into contact with polishing pad 32, and slurry 50 acts as the media for chemical mechanical polishing of the substrate or wafer. The carrier head 100 uniformly loads the substrate against the polishing pad.
The substrate is typically subjected to multiple polishing steps, including a main polishing step and a final polishing step. For the main polishing step, usually performed at station 25a, carrier head 100 applies a force of approximately four to ten pounds per square inch (psi) to substrate 10. At subsequent stations, carried head 100 may apply more or less force. For example, for a final polishing step, usually performed at station 25c, carrier head 100 may apply a force of about three psi. Carrier motor 76 rotates carrier head 100 at about thirty to two-hundred revolutions per minute. Platen 30 and carrier head 100 may rotate at substantially the same rate.
Generally, carrier head 100 holds the substrate against the polishing pad and evenly distributes a downward pressure across the back surface of the substrate. The carrier head also transfers torque from the drive shaft to the substrate and ensures that the substrate does not slip from beneath the carrier head during polishing.
Referring to
Housing assembly 102 may be formed of aluminum or stainless steel. The housing assembly is generally circular in shape to correspond the circular configuration of the substrate to be polished. The top surface of the housing assembly may include a cylindrical hub 120 having a threaded neck 122. To connect drive shaft 74 to carrier head 100, two dowel pins 124 may be inserted into matching dowel pin holes in hub 120 and a flange 96. Then, a threaded perimeter nut 98 is screwed onto threaded neck 122 to firmly attach carrier head 100 to drive shaft 74. When drive shaft 74 rotates, dowel pins 124 transfer torque to housing assembly 102 to rotate the carrier head about the same axis as the drive shaft.
At least two conduits 126 and 128 extend through hub 120. There may be one conduit for each channel 94 in drive shaft 74. When carrier head 100 is attached to drive shaft 74, the dowel pins align the carrier head so that conduits 126 and 128 connect to channels 94. O-rings (not shown) may be positioned in hub 120 surrounding each conduit 126 and 128 to form a fluid-tight seal between the conduits to the channels.
Loading mechanism 104 forms a vertically-movable seal between housing assembly 102 and base assembly 106 and defines a pressure chamber 130. A gas, such as air, is pumped into and out of pressure chamber 130 through conduit 126 to control the load applied to base assembly 106. When air is pumped into pressure chamber 130, base assembly 106 is forced downwardly to bring substrate 10 into contact with polishing pad 32. When air is pumped out of pressure chamber 130, base assembly is lifted upwardly to remove the substrate from polishing pad 32.
Loading mechanism 104 may include a cylindrical bellows 132 which is bolted or fixed to housing assembly 102 and base assembly 106 to form pressure chamber 130. Bellows 132 may be a stainless steel cylinder which expands or contracts depending upon whether a gas is supplied to or removed from pressure chamber 130. Bellows 132 may include upper and lower support plates 134 and 136 which are bolted or otherwise secured to housing assembly 102 and a base assembly 106, respectively. A cylindrical seal 138 may fit into a circumferential groove 112 on rim 110 of housing 102 and in a circumferential groove 139 in an upwardly-extending wall portion 118. of, base assembly 106. The seal 138 surrounds and protects bellows 132 from the corrosive effects of slurry 50. When housing assembly 102 is rotated, bellows 132 transfers torque from the housing assembly to the base assembly, causing it to also rotate. However, because the bellows are flexible, base assembly 106 can pivot with respect to the housing assembly about an axis parallel to the surface of the polishing pad to remain substantially parallel to the polishing pad surface.
Base assembly 106 includes a rigid backing fixture or plate 150 and a detachable module 152 which is attached to the underside of backing plate 150. Backing plate 150 may be generally disk-shaped to match the configuration of substrate 10, and may be formed of a metal such as aluminum or stainless steel. Module 152 includes a rigid support fixture or cup 154, conformable layer 108, an annular shield ring 160, and an annular retaining ring 162. Each of these elements will be discussed in detail below.
Module 152 may be removably attached to backing plate 150 by various attachment mechanisms, such as bolts, screws, key and key slot combination, vacuum chucking, or magnets. As such, module 152 can be detached and replaced if it is damaged or worn out. In addition, it may be replaced to change the polishing parameters. For example, different modules may incorporate conformable layers with different durometer measurements. The different modules may also have different retaining ring widths or retaining ring heights. The height and width of the retaining ring affects the polishing rate near the edge of the substrate. These module features can be selected to provide an optimal polishing performance.
Cup 154 may be formed of aluminum or stainless steel and may have an outer lip or rim 156 which projects downwardly to surround a recess. The conformable layer 108 is disposed within the recess so that the bottom surface of the conformable layer is substantially flush with the bottom surface of rim 156. The recess may be approximately one-eighth to one-quarter inch deep.
The conformable layer 108 is made of a visco-elastic material that has a substantially homogeneous density. Conformable layer 108 is elastic; i.e., it will return to its original shape when an applied load is removed. Conformable layer 108 is slightly compressible. In addition, conformable layer 108 undergoes normal strain; i.e., it will redistribute its mass in directions normal to an applied load. The durometer measurement of the conformable layer must be carefully selected. If the durometer measurement is too low, the material will lack elasticity. On the other hand, if the durometer measurement is too high, the material will not undergo normal strain. Conformable layer 108 may have a durometer measurement of between approximately fifteen to twenty-five on the Shore scale. Preferably, conformable layer 108 has a durometer measurement of about twenty-one on the Shore scale. The conformable material may have an adhesive surface so that it adheres to the walls of cup 154. In addition, it should be resistant to heat and be chemically inert vis-a-vis the polishing process. An appropriate conformable material is a urethane material available from Pittsburgh Plastics of Zelienopal, Pa. Module 152 may be manufactured by pouring liquid urethane into cup 154 and curing it to form layer 109.
Referring to
A thin sheet 158 of a low-friction material may be laminated to the outer surface of conformable layer 108 to provide a low-friction substrate mounting surface 164. The sheet 158 may be a seven mil thick film of urethane having a durometer measurement of approximately eighty-three on the Shore scale. Sheet 158 permits the conformable material layer 108 to closely conform to the back side of substrate 10 but prevents the substrate from adhering to the conformable material. Sheet 158 is sufficiently thin that substrate 10 may be considered to be in direct contact with conformable layer 108.
Referring to
Retaining ring 162 is an annular rigid ring, positioned within the circumference of shield ring 160. Retaining ring 162 may be adhesively attached directly to conformable layer 108. Retaining ring 162 may be formed of a hard plastic or ceramic material. Retaining ring 162 is separated from shield ring 160 by a small gap "r" so that the retaining ring may shift or pivot to accommodate variations in the vertical height of the surface of polishing pad 32. In operation, substrate 10 fits into a circular recess defined by retaining ring 162 and abuts mounting surface 164 of the conformable layer. Retaining ring 162 and substrate 10 have substantially the same thickness, so that retaining ring 162 also contacts polishing pad 32. The shear force created by the relative velocity between substrate 10 and polishing pad 32 tends to push the substrate from beneath carrier head 10. Retaining ring 162 prevents substrate 10 from moving from beneath base assembly 106.
Referring to
Housing assembly 102' includes two opposing flanges 114 which project downwardly from rim 110. Each flange 114 may have a rectangular slot 115. A torque pin 116 extends through each rectangular slot 115 and is secured in a receiving recess 117 in upward-extending wall portion 118' of backing plate 150 of base assembly 106'. The width of rectangular slot 115 is comparable to the width of torque pin 116 so that the pin cannot move horizontally in the slot. When drive shaft 74 rotates housing assembly 102', torque pins 116 transfer torque from the housing assembly to the base assembly. The height of rectangular slot 115 is greater than the height of torque pin 116 so that the pin can move vertically in the slot. Thus, base assembly 106' must rotate with housing assembly 102', but it is free to move vertically with respect to the housing assembly.
As discussed above, carrier head 100 may lift substrate 10 away from polishing pad 32 in order to move the substrate from one polishing station to another. In addition, the substrate may be ejected from carrier head 100 to return the substrate to transfer station 27 (see FIG. 1). Specifically, carrier head 100 may vacuum-chuck or pressure-eject the substrate to or from mounting surface 164, as explained in more detail below.
The carrier head includes several fluid lines which permit a gas, such as air, to flow into and out of base assembly 106 to vacuum-chuck or pressure-eject the substrate. Because base assembly 106 and housing assembly 102 can move vertically relative to each other, flexible fluid conduits are used to link conduit 128 to a passageway 170 in backing plate 150. As shown in
Referring to
A pump 182 is connected via fluid line 921 channel 94, conduit 128, conduit 172, passageway 170, passages 176, and vacuum-chucking passages 180 to mounting surface 164. If a vacuum is applied to passages 180 by pump 182, substrate 10 will be vacuum-chucked to mounting surface 164. If air is forced into passages 180 by pump 182, substrate 10 will be ejected from mounting surface 164.
Referring to
Referring to
A conformable layer in accordance with the present invention may be incorporated into various other carrier head designs, such as the one described in U.S. patent application Ser. No. 08/637,208 by Zuniga et al., filed on Apr. 24, 1996, entitled CARRIER HEAD DESIGN FOR A CHEMICAL MECHANICAL POLISHING APPARATUS, assigned to the assignee of the subject application, the entire disclosure of which is hereby incorporated by reference.
Referring specifically to
The present invention has been described in terms of a preferred embodiment. The invention however, is not limited to the embodiment depicted and described. Rather, the scope of the invention is defined by the appended claims.
Tolles, Robert D., Prince, John, Cheng, Tsungan
Patent | Priority | Assignee | Title |
11344991, | Feb 28 2019 | Applied Materials, Inc | Retainer for chemical mechanical polishing carrier head |
7223690, | Dec 04 2000 | Ebara Corporation | Substrate processing method |
7357699, | Feb 10 2003 | Ebara Corporation | Substrate holding apparatus and polishing apparatus |
7635292, | Dec 10 2004 | Ebara Corporation | Substrate holding device and polishing apparatus |
7867063, | Feb 10 2003 | Ebara Corporation | Substrate holding apparatus and polishing apparatus |
7967665, | Mar 31 2006 | Ebara Corporation | Substrate holding apparatus, polishing apparatus, and polishing method |
7988537, | Feb 10 2003 | Ebara Corporation | Substrate holding apparatus and polishing apparatus |
8092281, | Oct 27 2006 | SHIN-ETSU HANDOTAI CO , LTD ; FUJIKOSHI MACHINERY CORP | Polishing head and polishing apparatus |
8100739, | Mar 31 2006 | Ebara Corporation | Substrate holding apparatus, polishing apparatus, and polishing method |
8267746, | Mar 31 2006 | Ebara Corporation | Substrate holding apparatus, polishing apparatus, and polishing method |
8485866, | Mar 31 2006 | Ebara Corporation | Substrate holding apparatus, polishing apparatus, and polishing method |
Patent | Priority | Assignee | Title |
4132037, | Feb 28 1977 | CYBEQ NANO TECHNOLOGIES, INC | Apparatus for polishing semiconductor wafers |
4270316, | Mar 03 1978 | WACKER SILTRONIC GESELLSCHAFT FUR HALBLEITERMATERIALIEN MBH | Process for evening out the amount of material removed from discs in polishing |
4373991, | Jan 28 1982 | AT & T TECHNOLOGIES, INC , | Methods and apparatus for polishing a semiconductor wafer |
4519168, | Sep 18 1979 | SpeedFam-IPEC Corporation | Liquid waxless fixturing of microsize wafers |
4669226, | Aug 03 1984 | Wilhelm Loh Wetzlar Optikmaschinen GmbH & Co. KG | Device for holding delicate workpieces, in particular optical lenses and other optical structural elements |
4918869, | Oct 28 1987 | Fujikoshi Machinery Corporation | Method for lapping a wafer material and an apparatus therefor |
4954142, | Mar 07 1989 | Cabot Microelectronics Corporation | Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor |
5081795, | Oct 06 1988 | Shin-Etsu Handotai Company, Ltd. | Polishing apparatus |
5193316, | Oct 29 1991 | Texas Instruments Incorporated | Semiconductor wafer polishing using a hydrostatic medium |
5205082, | Dec 20 1991 | Ebara Corporation | Wafer polisher head having floating retainer ring |
5230184, | Jul 05 1991 | Freescale Semiconductor, Inc | Distributed polishing head |
5255474, | Aug 06 1990 | Matsushita Electric Industrial Co., Ltd. | Polishing spindle |
5423558, | Mar 24 1994 | IPEC/Westech Systems, Inc. | Semiconductor wafer carrier and method |
5423716, | Jan 05 1994 | Applied Materials, Inc | Wafer-handling apparatus having a resilient membrane which holds wafer when a vacuum is applied |
5441444, | Oct 12 1992 | Fujikoshi Kikai Kogyo Kabushiki Kaisha | Polishing machine |
5443416, | Sep 09 1993 | Ebara Corporation | Rotary union for coupling fluids in a wafer polishing apparatus |
5449316, | Jan 05 1994 | Applied Materials, Inc | Wafer carrier for film planarization |
5584746, | Oct 18 1993 | Shin-Etsu Handotai Co., Ltd. | Method of polishing semiconductor wafers and apparatus therefor |
5624299, | Mar 02 1994 | Applied Materials, Inc.; Applied Materials, Inc | Chemical mechanical polishing apparatus with improved carrier and method of use |
5733182, | Mar 04 1994 | Fujitsu Semiconductor Limited | Ultra flat polishing |
FR2558095, | |||
JP2243263, | |||
JP6125768, |
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