A method of fabricating a semiconductor device capable of improving productivity by efficiently polycrystallizing an amorphous silicon film is obtained. This method of fabricating a semiconductor device comprises steps of forming an amorphous film on a substrate, forming a conductor film on the substrate, arranging the substrate so that the surface of the conductor film is substantially parallel to an electric field in a waveguide and irradiating the conductor film with an electromagnetic wave thereby making the conductor film generate heat and crystallizing the amorphous film with the heat. Thus, the substrate is arranged to be substantially parallel to the electric field in the waveguide, whereby the absorptivity of the conductor film for the electromagnetic wave is improved and hence the conductor film can be efficiently heated. Thus, crystallization is performed in a short time, thereby improving productivity. The amorphous film is indirectly homogeneously heated through the conductor film having stable absorptivity regardless of the surface state of the amorphous film, whereby the yield is improved in crystallization of the amorphous film.
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12. A method of fabricating a semiconductor device comprising steps of;
forming an amorphous film on a substrate; forming a conductor film on said substrate; arranging said substrate so that the surface of said conductor film is substantially parallel to an electric field in a waveguide; and irradiating said conductor film with an electromagnetic wave thereby making said conductor film generate heat and crystallizing said amorphous film with said heat, wherein said electromagnetic wave includes a microwave, and said conductor film includes a resistor film. 10. A method of fabricating a semiconductor device comprising steps of;
forming an amorphous film on a substrate; forming a conductor film on said substrate; arranging said substrate so that the surface of said conductor film is substantially parallel to an electric field in a waveguide; and irradiating said conductor film with an electromagnetic wave thereby making said conductor film generate heat and crystallizing said amorphous film with said heat, wherein said step of crystallizing said amorphous film includes a step of irradiating said conductor film with pulsing said electromagnetic wave thereby making said conductor film generate heat and crystallizing said amorphous film with said heat. 1. A method of fabricating a semiconductor device comprising steps of;
forming an amorphous film on a substrate; forming a conductor film on said substrate; arranging said substrate so that the surface of said conductor film is substantially parallel to an electric field in a waveguide; and irradiating said conductor film with an electromagnetic wave thereby making said conductor film generate heat and crystallizing said amorphous film with said heat, wherein said step of arranging said substrate includes a step of arranging said substrate on a position seperated from a reflecting end surface for said electromagnetic wave at an interval of substantially odd times λ/4 assuming that λ represents the wavelength of said electromagnetic wave. 11. A method of fabricating a semiconductor device comprising steps of;
forming an amorphous film on a substrate; forming a conductor film on said substrate; arranging said substrate so that the surface of said conductor film is substantially parallel to an electric field in a waveguide; and irradiating said conductor film with an electromagnetic wave thereby making said conductor film generate heat and crystallizing said amorphous film with said heat, wherein said step of crystallizing said amorphous film includes a step of irradiating said conductor film with said electromagnetic wave while moving at least either said substrate formed with said conductor film or said electromagnetic wave thereby making said conductor film generate heat and crystallizing said amorphous film with said heat. 9. A method of fabricating a semiconductor device comprising steps of;
forming an amorphous film on a substrate; forming a conductor film on said substrate; arranging said substrate so that the surface of said conductor film is substantially parallel to an electric field in a waveguide; and irradiating said conductor film with an electromagnetic wave thereby making said conductor film generate heat and crystallizing said amorphous film with said heat, wherein said step of crystallizing said amorphous film includes steps of: forming said waveguide by folding a linear waveguide a plurality of times while providing a purality of openings for passing said substrate therethrough on high-field portions of the side surface of said waveguide, and moving said substrate to pass through said plurality of openings. 2. The method of fabricating a semiconductor device according to
said reflecting end surface for said electromagnetic wave includes a reflector provided to block an end of said waveguide.
3. The method of fabricating a semiconductor device according to
said step of arranging said substrate includes a step of arranging said substrate while interposing a spacer member, transparent with respect to said electromagnetic wave, having a thickness of substantially odd times λ/4.
4. The method of fabricating a semiconductor device according to
said step of crystallizing said amorphous film includes steps of: arranging an electromagnetic convergent lens on the forward end of said waveguide, and irradiating the surface of said conductor film with said electromagnetic wave converged by said electromagnetic convergent lens. 5. The method of fabricating a semiconductor device according to
said step of crystallizing said amorphous film includes steps of: setting a reflector reflecting said electromagnetic wave, and irradiating said reflector with said electromagnetic wave converged by said electromagnetic convergent lens and moving said substrate in parallel with said reflector while maintaining a distance of substantially odd times λ/4 from said reflector for said electromagnetic wave. 6. The method of fabricating a semiconductor device according to
said step of crystallizing said amorphous film includes a step of providing a slit in said waveguide and linearly emitting said electromagnetic wave from said slit of said waveguide thereby irradiating the surface of said conductor film with said electromagnetic wave.
7. The method of fabricating a semiconductor device according to
said step of crystallizing said amorphous film includes steps of: setting a reflector reflecting said electromagnetic wave, and irradiating said reflector with said electromagnetic wave linearly emitted from said slit of said waveguide and moving said substrate in parallel with said reflector while maintaining a distance of substantially odd times λ/4 from said reflector for said electromagnetic wave. 8. The method of fabricating a semiconductor device according to
said step of crystallizing said amorphous film includes a step of providing an opening for passing said substrate therethrough on said waveguide, providing a choke structure in the vicinity of said opening and inserting said substrate from said opening and passing said substrate through said waveguide while maintaining a distance of substantially odd times λ/4 from said reflecting end surface for said electromagnetic wave.
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1. Field of the Invention
The present invention relates to a method of fabricating a semiconductor device, and more particularly, it relates to a method of fabricating a semiconductor device such as a thin-film transistor.
2. Description of the Prior Art
In relation to a liquid crystal display recently rapidly coming into wide use, it is required to prepare a thin-film transistor (hereinafter referred to as a polycrystalline silicon TFT) employing a polycrystalline silicon film formed on a substrate as an active layer at a low cost, in order to provide a lightweight and compact display of high performance at a low cost. In general, the maximum temperature in a fabrication process for a polycrystalline silicon TFT is reduced from about 1000°C C. to not more than about 600°C C., thereby enabling employment of a low-priced glass substrate in place of a high-priced quartz substrate. The fabrication process for a polycrystalline silicon TFT employing the low-priced glass substrate is generally referred to as a low-temperature process.
In relation to the conventional low-temperature process, known is excimer laser annealing (ELA) for crystallizing an amorphous silicon film employed as a starting material thereby forming a polycrystalline silicon film. In this ELA, the amorphous silicon film is irradiated with a short-wave laser beam of about 200 nm having high absorptivity for the amorphous silicon film or a polycrystalline silicon film by pulse oscillation of several 100 ns, thereby heating the amorphous silicon film or the polycrystalline silicon film to a high temperature and performing crystallization.
In the conventional ELA, however, beam intensity is dispersed due to instability of the pulse oscillation, and hence it is difficult to uniformly perform heating. Therefore, the yield is reduced to disadvantageously reduce productivity.
An object of the present invention is to provide a method of fabricating a semiconductor device capable of improving productivity by efficiently polycrystallizing an amorphous silicon film.
Another object of the present invention is to improve the yield in crystallization of the amorphous silicon film in the aforementioned method of fabricating a semiconductor device.
A method of fabricating a semiconductor device according to an aspect of the present invention comprises steps of forming an amorphous film on a substrate, forming a conductor film on the substrate, arranging the substrate so that the surface of the conductor film is substantially parallel to an electric field in a waveguide, and irradiating the conductor film with an electromagnetic wave thereby making the conductor film generate heat and crystallizing the amorphous film with the heat.
In the method of fabricating a semiconductor device according to this aspect, the substrate is so arranged that the surface of the conductor film is substantially parallel to the electric field in the waveguide as hereinabove described thereby improving absorptivity of the conductor film with respect to the electromagnetic wave, whereby the conductor film can be efficiently heated. Thus, crystallization can be performed in a short time, thereby improving productivity. When a conductor film having stable absorptivity is employed, the amorphous film can be uniformly heated regardless of the surface state thereof due to indirect heating through the conductor film having stable absorptivity, whereby the yield can be improved in crystallization of the amorphous film. The productivity can be improved also according to this.
In the aforementioned method of fabricating a semiconductor device according to this aspect, the step of arranging the substrate preferably includes a step of arranging the substrate on a position separated from a reflecting end surface for the electromagnetic wave at an interval of substantially odd times λ/4 assuming that λ represents the wavelength of the electromagnetic wave. According to this structure, the absorptivity of the conductor film for the electromagnetic wave is further improved, whereby the conductor film can be more efficiently heated.
In the aforementioned method of fabricating a semiconductor device including the step of arranging the substrate on the position separated from the reflecting end surface for the electromagnetic wave at the interval of substantially odd times λ/4, the reflecting end surface for the electromagnetic wave may include a reflector provided to block an end of the waveguide. The step of arranging the substrate preferably includes a step of arranging the substrate while interposing a spacer member, transparent with respect to the electromagnetic wave, having a thickness of substantially odd times λ/4. According to this structure, the substrate can be readily arranged on the position separated from the reflecting end surface for the electromagnetic wave at the interval of substantially odd times λ/4.
In the aforementioned method of fabricating a semiconductor device including the step of arranging the substrate on the position separated from the reflecting end surface for the electromagnetic wave at the interval of substantially odd times λ/4, the step of crystallizing the amorphous film preferably includes steps of arranging an electromagnetic convergent lens on the forward end of the waveguide and irradiating the surface of the conductor film with the electromagnetic wave converged by the electromagnetic convergent lens. According to this structure, the conductor film can be concentrically irradiated with a linear or point electromagnetic wave. In this case, the step of crystallizing the amorphous film may include steps of setting a reflector reflecting the electromagnetic wave and irradiating the reflector with the electromagnetic wave converged by the electromagnetic convergent lens and moving the substrate in parallel with the reflector while maintaining a distance of substantially odd times λ/4 from the reflector for the electromagnetic wave. According to this structure, crystallization can be continuously performed over the entire conductor film, whereby crystallization can be readily performed also on a large-sized substrate.
In the aforementioned method of fabricating a semiconductor device including the step of arranging the substrate on the position separated from the reflecting end surface for the electromagnetic wave at the interval of substantially odd times λ/4, the step of crystallizing the amorphous film preferably includes a step of providing a slit in the waveguide and linearly emitting the electromagnetic wave from the slit of the waveguide thereby irradiating the surface of the conductor film with the electromagnetic wave. According to this structure, the conductor film can be readily concentrically irradiated with a linear electromagnetic wave. In this case, the step of crystallizing the amorphous film includes steps of setting a reflector reflecting the electromagnetic wave and irradiating the reflector with the electromagnetic wave linearly emitted from the slit of the waveguide and moving the substrate in parallel with the reflector while maintaining a distance of substantially odd times λ/4 from the reflector for the electromagnetic wave. According to this structure, crystallization can be continuously performed over the entire conductor film, whereby crystallization can be readily performed also on a large-sized substrate.
In the aforementioned method of fabricating a semiconductor device including the step of arranging the substrate on the position separated from the reflecting end surface for the electromagnetic wave at the interval of substantially odd times λ/4, the step of crystallizing the amorphous film preferably includes a step of providing an opening for passing the substrate therethrough on the waveguide, providing a choke structure in the vicinity of the opening and inserting the substrate from the opening and passing the substrate through the waveguide while maintaining a distance of substantially odd times λ/4 from the reflecting end surface for the electromagnetic wave. In this case, the structure provided with the opening for passing the substrate therethrough can be rendered equivalent to that provided with no opening in view of a high-frequency circuit due to the choke structure. Thus, no leakage of a microwave or the like may be taken into consideration also when the opening is provided. When the substrate is inserted from the opening and passed through the waveguide, crystallization can be continuously performed over the entire conductor film, whereby crystallization can be readily performed also on a large-sized substrate.
In the aforementioned method of fabricating a semiconductor device according to this aspect, the step of crystallizing the amorphous film preferably includes steps of forming the waveguide by folding a linear waveguide a plurality of times while providing a plurality of openings for passing the substrate therethrough on high-field portions of the side surface of the waveguide and moving the substrate to pass through the plurality of openings. According to this structure, the conductor film of the substrate can be continuously irradiated with the electromagnetic wave, whereby the conductor film can be efficiently heated. Thus, crystallization can be performed in a short time, thereby improving productivity.
In the aforementioned method of fabricating a semiconductor device according to this aspect, the step of crystallizing the amorphous film preferably includes a step of irradiating the conductor film with a pulsing electromagnetic wave thereby making the conductor film generate heat and crystallizing the amorphous film with the heat. When the conductor film is thus irradiated with the pulsing electromagnetic wave, crystallization can be performed by short-time heating.
In the aforementioned method of fabricating a semiconductor device according to this aspect, the step of crystallizing the amorphous film preferably includes a step of irradiating the conductor film with the electromagnetic wave while moving at least either the substrate formed with the conductor film or the electromagnetic wave thereby making the conductor film generate heat and crystallizing the amorphous film with the heat. According to this structure, crystallization can be readily continuously performed over the entire conductor film.
In the aforementioned method of fabricating a semiconductor device according to this aspect, the electromagnetic wave preferably includes a microwave, and the conductor film preferably includes a resistor film. In this case, the resistor film can be readily heated with the microwave.
In the aforementioned method of fabricating a semiconductor device according to this aspect, the conductor film may include a polysilicon film. Further, the amorphous film may include an amorphous silicon film.
The foregoing and other objects, features, aspects and advantages of the present invention will become more apparent from the following detailed description of the present invention when taken in conjunction with the accompanying drawings.
Embodiments of the present invention are now described with reference to the drawings.
(First Embodiment)
A fabrication process for a semiconductor device according to a first embodiment of the present invention is described with reference to
First, a sample 100 shown in
A microwave absorption mechanism of the absorption film 5 is now described. A dielectric material, a resistor or a magnetic substance absorbs a microwave. A microwave absorption mechanism formed by a resistor is optimum as a material for absorbing a microwave in a method of fabricating a semiconductor device. In the microwave absorption mechanism formed by the resistor, the resistor is arranged in an electric field formed by a microwave so that a current (charges) resulting from the electric field flows through the resistor according to the Ohm's law. Thus, the resistor generates heat. The microwave forms an alternating field in the resistor, and hence an alternating current is maintained. Thus, the resistor can be efficiently heated by irradiating the same with the microwave.
An experimental device employed in the first embodiment is described with reference to FIG. 3. This experimental device comprises a rectangular waveguide 6, a microwave oscillator 8, an isolator 9, a matcher 10 and a shutter 11. The microwave oscillator 8 oscillates a microwave applied to the absorption film 5 of the sample 100. This microwave oscillator 8 can vary microwave oscillation power between 0.5 kW and 5.0 kW (set to 4.6 kW in the first embodiment). The isolator 9 prevents a returning microwave from returning to the microwave oscillator 8. The matcher 10 matches the microwave. The oscillated microwave is applied to the absorption film 5 of the sample 100 stored in the rectangular waveguide 6 through the isolator 9, the matcher 10 and the shutter 11. In this case, the quantity of the microwave applied to the absorption film 5 is controlled by opening/closing the shutter 11. However, the shutter 11 employed in the first embodiment, confirmed as transmitting about 15% of the microwave in a closed state, is not complete. The rectangular waveguide 6 is an example of the "waveguide" according to the present invention.
According to the first embodiment, the sample 100 was arranged in parallel with the plane 6b, and thereafter irradiated with the microwave with power of 4.6 kW. Thus, the absorption film 5 generated heat due to the applied microwave, and the heat emitted from the absorption film 5 diffused into the insulator film 4, to be substantially uniformly transmitted to the amorphous silicon film 3a. Consequently, the amorphous silicon film 3a was substantially uniformly annealed and homogeneously crystallized with no dispersion. Thus, a polycrystalline silicon film 3 was formed as shown in FIG. 2.
In the first embodiment, the rates of crystallization with respect to shutter opening times were investigated in two types of samples including absorption films 5 having sheet resistance values of 250Ω/ and 550Ω/ irradiated with microwaves at total oscillation times of 24 sec. and 28 sec. respectively according to the microwave application process shown in FIG. 6.
According to the first embodiment, as hereinabove described, the heat generated from the absorption film 5 irradiated with the microwave is utilized for indirectly heating the amorphous silicon film 3a, thereby crystallizing the same. The absorption film 5 has stable microwave absorptivity as well as a stable microwave output, whereby the microwave output absorbed by the absorption film 5 is uniformly stabilized. Consequently, the amorphous silicon film 3a can be substantially uniformly heated.
According to the first embodiment, the sample 100 is so arranged that the surface of the absorption film 5 is substantially parallel to the electric field in the rectangular wave guide 6 thereby improving the absorptivity of the absorption film 5 for the microwave, whereby the absorption film 5 can be efficiently heated. Thus, crystallization can be performed in a short time, for improving productivity.
(Second Embodiment)
A method of fabricating a semiconductor device according to a second embodiment of the present invention is described with reference to
First, an experimental device employed for the second embodiment is described with reference to FIG. 8. According to the second embodiment, a waveguide 21 arranged in a chamber 24 so that an end thereof is blocked with a chamber wall 22 is employed in place of the rectangular waveguide 6 in the experimental device according to the first embodiment shown in FIG. 3. The remaining part of the experimental device employed for the second embodiment is similar in structure to that of the experimental device employed for the first embodiment.
The direction and the position for introducing the sample 100 according to the second embodiment are described with reference to FIG. 10. When a microwave is oscillated in the waveguide 21 having an end blocked with the chamber wall (reflector) 22, a standing wave is formed in the waveguide 21 as shown in FIG. 10. The chamber wall 22 reflects the microwave having a wavelength λg oscillated toward the chamber wall 22. Thus, the field strength of the microwave is increased on positions odd times (λg/4, 3 λg/4, 5 λg/4, . . . ) λg/4 (¼ the wavelength λg of the microwave in the waveguide 21) from the chamber wall 22.
Reflectivity S0 for the microwave in an absorption film 5 arranged on a position odd times λg/4 from the chamber wall 22 is expressed as follows:
where Rs represents the sheet resistance of the absorption film 5, and Z0 represents spatial impedance, which is 377Ω in a free space. The microwave transmittance of the absorption film 5 is zero on the position of λg/4, and hence the microwave absorptivity of the absorption film 5 is increased when the reflectivity S0 is reduced. In other words, the microwave absorptivity of the absorption film 5 is maximized when Rs=Z0=377Ω/. The microwave reflectivity S1 of the waveguide 21 is expressed as follows:
where Zcg represents spatial impedance in the waveguide 21, which is expressed as follows:
where a represents the longitudinal size of a section of the waveguide 21. According to the second embodiment, Zcg=457Ω is obtained by substituting Z0=377Ω/, a=109 mm and λg=122 mm in the equation (3). Therefore, the reflectivity S1 of the absorption film 5 in the waveguide 21 reaches zero when setting Rs=Zcg=457Ω.
When the absorption film 5 is arranged in the waveguide 21 having the end blocked with the chamber wall (reflector) 22 on the position separated from the chamber wall 22 at the interval of substantially odd times λg/4 (¼ the wavelength of the microwave) as hereinabove described, the absorption film 5 can be set on a position having strong field strength. Thus, the absorption film 5 can efficiently absorb the microwave. It has been proved that the microwave can be efficiently absorbed when the sheet resistance of the absorption film 5 is set to about 457Ω/.
According to the second embodiment, a wavelength λg1 is equal to λg·∈½=99.6 mm in consideration of the in-waveguide wavelength λg (147.8 mm) and the dielectric constant ∈ (2.2) of Teflon, and hence the thickness of the Teflon spacer 23 is so adjusted as to arrange the absorption film 5 on a position separated from the chamber wall (reflection end) 22 by about 24.9 mm. The sample 100 is so arranged that the surface of the absorption film 5 is parallel to the chamber wall 22.
Then, the sample 100 located on the position of λg/4 is irradiated with the microwave. Therefore, the absorption film 5 generates heat due to the applied microwave, and this heat is emitted from the absorption film 5 and diffused into an insulator film 4, to be substantially uniformly transmitted to an amorphous silicon film 3a. Thus, the amorphous silicon film 3a is substantially uniformly annealed and homogeneously crystallized with no dispersion, similarly to the first embodiment.
In relation to the second embodiment, the ratios of crystallization to shutter opening times were investigated on three samples including absorption films 5 having sheet resistance values of 250Ω/, 250Ω/ and 550Ω/ irradiated with microwaves preheated for 3.0 sec., 4.0 sec. and 5.5 sec. respectively through a process similar to the microwave application process according to the first embodiment shown in FIG. 6. The annealing times for the three samples were 0.5 sec.
Referring to
According to the second embodiment, absorptivity of the absorption film 5 for the microwave can be more improved by arranging the absorption film 5 on the position separated from the chamber wall 22 serving as the reflection end for the microwave at the interval of about λ/g so that the surface thereof is parallel to the chamber wall 22, as hereinabove described. Thus, the absorption film 5 can be more efficiently heated. Consequently, crystallization can be performed in a shorter time as compared with the first embodiment, whereby productivity can be more improved.
According to the second embodiment, crystallization is performed by irradiating the absorption film 5 having stable absorptivity with the microwave having a stable output and indirectly heating the amorphous silicon film 3a through the heat stably generated from the absorption film 5, whereby the amorphous silicon film 3a can be substantially uniformly heated.
Although the present invention has been described and illustrated in detail, it is clearly understood that the same is by way of illustration and example only and is not to be taken by way of limitation, the spirit and scope of the present invention being limited only by the terms of the appended claims.
For example, while the shutter 11 is provided on part of the rectangular waveguide 6 for irradiating the miniature sample 100 arranged in the rectangular waveguide 6 with the microwave in the aforementioned first embodiment, the present invention is not restricted to this but a microwave oscillation source may alternatively instantaneously output a pulsing microwave. In order to irradiate a large-sized sample with a microwave, a branch may be provided for switching the microwave to a waveguide different from the waveguide 6, thereby controlling the microwave with a magnetic field or the like. Further alternatively, the absorption film 5 may be irradiated with a microwave while moving at least either the sample 100 or the microwave in place of applying a pulsing microwave.
While the miniature sample 100 is arranged in the rectangular waveguide 6 according to the first embodiment shown in
While the miniature sample 100 arranged on the position of λg/4 in the waveguide 21 is irradiated with the microwave in the aforementioned second embodiment, the present invention is not restricted to this but a large-sized sample may be moved and irradiated with a microwave. In a first modification of the second embodiment shown in
More specifically, openings 41a and 41b are provided on parts of the waveguide 41. A reflector 42 consisting of a chamber wall or the like is provided perpendicularly to the direction of application of the microwave. When the large-sized sample 200 is inserted into the opening 41a and passed through a position separated from the reflector 42 by about λg/4, the absorption film of the sample 200 can be efficiently heated. Consequently, crystallization can be performed in a short time similarly to the second embodiment, whereby productivity can be improved. According to the first modification of the second embodiment, choke structures may be provided in the vicinity of the openings 41a and 41b for attaining a structure equivalent to that provided with no openings 41a and 41b in view of a high-frequency circuit. Thus, no leakage of the microwave or the like may be taken into consideration despite the openings 41a and 41b.
While the miniature sample 100 is arranged in the waveguide 21 according to the second embodiment shown in
While the miniature sample 100 is arranged in the waveguide 21 according to the second embodiment shown in
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