A lead frame with a plurality of bump terminals is provided. Stamping an indentation into each lead in the lead frame forms the bump terminals. The bump terminals will be used as contact points in a completed semiconductor device.
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1. A packaged semiconductor device comprising:
a leadframe having a die carrier and a plurality of leads having a first surface formed having bump indentations and a second surface formed having bump terminals; and
a semiconductor die having a surface supported by the die carrier, wherein the surface is formed with a plurality of conductive bumps for attaching to the plurality of bump indentations.
2. The packaged semiconductor device of
3. The packaged semiconductor device of
8. The package semiconductor device of
9. The packaged semiconductor device of
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This invention relates to semiconductor packaging and, more particularly, to a bump chip lead frame and package.
With pressure for miniaturization of end-user consumer products, there is continuing pressure to reduce the size of semiconductor packages that are used in such products, while at the same time providing greater functionality with the smaller semiconductor packages. This has resulted in a variety of surface mount semiconductor packages having smaller package outlines and a greater number of inputs and outputs.
One such package is known as the bumped chip carrier (BCC) package. A BCC package contains a semiconductor die that is connected via interconnecting wires to a plurality of terminals. The semiconductor die and the interconnecting wires are encapsulated in mould compound with the terminals exposed and secured onto the surface of the package.
The BCC package is formed by first forming a patterned layer of resist on an upper surface of a sheet of copper alloy. The patterned layer of resist has openings, and a half-etching process is used to etch cavities in the copper alloy at the openings. Then, layers of plating are formed on the inside surface of the cavities and the layer of resist is removed, forming a copper alloy substrate.
A semiconductor die is centrally mounted on the copper alloy substrate, and gold bumps are bonded to the layers of plating. Interconnecting wires are connected between the semiconductor die and the gold bumps. The semiconductor die, the interconnecting wires, the gold bumps, and the cavities are then encapsulated using a mould compound. The copper alloy substrate is dissolved away, leaving the plating layers, resembling small bumps, exposed to form the terminals. Such a structure is disclosed in European Patent Application EP 0773584A2, as entitled “Device Having Resin Package and Method of Produce the Same”.
There are several disadvantages associated with the BCC package including the difficulty of controlling the etching process to form the cavities on the copper substrate, and the final process of dissolving the copper alloy substrate. Such processes can adversely affect the integrity of the plating layer and also adversely affect mould locking between the semiconductor die and the mould compound. Another disadvantage is the need and cost of gold bumping which requires a specialized and dedicated machine. In addition, the relatively high cost of using and forming the copper alloy substrate, and later removing the copper alloy substrate altogether is another disadvantage.
For a more complete understanding of the present invention and advantages thereof, reference is now made to the following descriptions, taken in conjunction with the following drawings, in which like reference numerals represent like parts, and in which:
In
An encapsulant 506 covers the top portion of semiconductor device 500 leaving bump terminals 110 exposed. Encapsulant 506 can be any encapsulant applied in any traditional manner such as in an one-sided encapsulation process. In one embodiment, tape molding is used. In this embodiment a layer of tape such as adhesive polymide of tape is applied over the bottom portion of semiconductor device 500 and over the bump terminals. Then, the semiconductor device is placed in a mold and encapsulated. The mold and tape are then removed and the individual devices are separate. Tape molding process are well known in the art.
Encapsulant 506 is generally applied to an entire lead frame and the individual devices are then separated. By applying encapsulant only to one side of semiconductor device 500, no further processing, such as etching or other removal of encapsulant molded directly to the bump terminals 110 needs to be done providing an advantage over the prior art. Application of encapsulant 506 provides for mold lock region 510, which helps to keep the spacing between die carrier 106 and leads 108 intact as well as provide for enhanced mechanical adhesion between the lead frame and molding compound.
Although the present invention has been described in several embodiments, a myriad of changes, variations, alterations, transformations and modifications may be suggested to one skilled in the art. It is intended that the present invention encompass such changes, variations, alterations, transformations and modifications and that they fall within the spirit and scope of the appended claims.
Chew, Chee Chuan, Tan, Aik Chong, Tan, Chong Un
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