A semiconductor fabrication process and the resulting integrated circuit include forming a gate electrode (116) over a gate dielectric (104) over a semiconductor substrate (102). A spacer film (124) exhibiting a tensile stress characteristic is deposited over the gate electrode (116). The stress characteristics of at least a portion of the spacer film is then modulated (132, 192) and the spacer film (124) is etched to form sidewall spacers (160, 162) on the gate electrode sidewalls. The spacer film (124) is an LPCVD silicon nitride in one embodiment. Modulating (132) the spacer film (124) includes implanting xenon or Germanium into the spacers (160) at an implant energy sufficient to break at least some of the silicon nitride bonds. The modulation implant (132) may be performed selectively or non-selectively either before or after etching the spacer film (124).
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13. A semiconductor fabrication process, comprising:
depositing a silicon nitride spacer film over a gate electrode and a semiconductor substrate over which the gate electrode is positioned;
etching the spacer film to form silicon nitride spacers on sidewalls of the gate electrode; and
blanket implanting at least some of the sidewall spacers with Germanium at an implant energy of 80 kev and an implant angle of approximately 10° to modulate a stress characteristic of the implanted spacers.
9. A semiconductor fabrication process, comprising:
depositing a silicon nitride spacer film exhibiting a first tensile stress characteristic over a gate electrode and a semiconductor substrate over which the gate electrode is positioned;
etching the spacer film to form silicon nitride spacers on sidewalls of the gate electrode; and
implanting at least some of the sidewall spacers with an implant species selected from xenon and Germanium using an implant angle of 10° or greater to modulate a stress characteristic of the implanted spacers.
12. A semiconductor fabrication process, comprising:
depositing a silicon nitride spacer film exhibiting a first tensile stress characteristic over a gate electrode and a semiconductor substrate over which the gate electrode is positioned;
etching the spacer film to form silicon nitride spacers on sidewalls of the gate electrode; and
selectively implanting at least some of the sidewall spacers of n-channel transistors with an xenon ions at an implant energy of approximately 180 kev and an implant angle of approximately 45° C. to modulate a stress characteristic of the implanted spacers.
1. A semiconductor fabrication process, comprising:
forming a gate electrode over a gate dielectric over a semiconductor substrate;
thermally depositing, at a temperature in the range of approximately 550 to 750° C., a silicon nitride spacer film over the gate electrode, the deposited spacer film exhibiting a first tensile stress;
modulating a stress characteristic of at least a portion of the spacer film from the first tensile stress to a second tensile stress; and
etching the spacer film to form sidewall spacers laterally disposed on either side of the gate electrode, wherein at least a portion of the sidewall spacers include sidewall spacers exhibiting the second tensile stress.
3. A semiconductor fabrication process, comprising:
forming a gate electrode over a gate dielectric over a semiconductor substrate;
depositing a spacer film over the gate electrode, the deposited spacer film exhibiting a first tensile stress;
modulating a stress characteristic of at least a portion of the spacer film from the first tensile stress to a second tensile stress; and
etching the spacer film to form sidewall spacers laterally disposed on either side of the gate electrode, wherein at least a portion of the sidewall spacers include sidewall spacers exhibiting the second tensile stress;
wherein modulating the stress characteristic comprises implanting xenon into at least a portion of the spacer film.
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1. Field of the Invention
The present invention relates generally to the field of semiconductor fabrication and, more particularly, to a process of fabricating transistors having sidewall spacers.
2. Description of Related Art
The use of sidewall spacers in the formation of metal-oxide-semiconductor (MOS) transistors is well known. A spacer is a structure located adjacent to the sidewalls of a transistor's gate. After forming the transistor gates, the spacers are typically formed by following a conformal deposition process with an anisotropic etch. Portions of the deposited film adjacent vertically oriented portions of the pre-deposition topography remain after the etch. Sidewall spacers provide an implant block that enables, for example, lateral displacement of heavily doped source/drain regions from the edges of the transistor gate. This displacement is beneficial in reducing short channel effects of submicrons and deep submicron transistors. In addition, spacers tend to lessen the severity of the wafer topography thereby facilitating subsequent fabrication processes.
In conventional transistor design, the spacers are ideally intended to be electrically inactive. Other than the electrical effects caused by the lateral displacement of the source/drain regions relative to the transistor gate, the spacer is not supposed to effect the operating characteristics of the transistor. Unfortunately, some of the more prevalent spacer materials tend to impact the transistor's performance. Specifically, dielectric materials including silicon nitride are well known to impart stress on the films over which they are deposited. This stress can affect parameters including electron mobility, defect generation, and dopant activation in the underlying substrate thereby altering the transistor's performance. Even worse, these stress effects tend to be non-symmetrical with respect to n-channel and p-channel transistors in a CMOS process.
The problem highlighted above is address by a semiconductor process and resulting transistor in which the spacer film is subjected to post deposition processing that modulates the film's stress characteristics. The spacer film may be bombarded with an electrically neutral species by ion implantation, as an example, to break at least some of the bonds in the spacer film thereby alter the stress effects of the film. In one embodiment, the spacer film is a tensile dielectric such as LPCVD silicon nitride and the stress modulation processing includes bombarding the spacer from with a heavy implant species such as Germanium or Xenon either selectively (masked) or non-selectively (blanket implant).
The invention, together with further advantages thereof, may best be understood by reference to the following description taken in conjunction with the accompanying drawings in which:
Reference will now be made in detail in the presently preferred embodiments of the invention, examples of which are illustrated in the accompanying drawings. It should be noted that the drawings are in simplified form and are not to precise scale. Although the invention herein refers to certain illustrated embodiments, it is to be understood that these embodiments are presented by way of example and not by way of limitation. The intent of the following detailed description is to cover all modifications, alternatives, and equivalents as may fall within the spirit and scope of the invention as defined by the appended claims.
It is to be understood and appreciated that the process steps and structures described herein do not cover a complete process flow for the manufacture of an integrated circuit. The present invention may be practiced in conjunction with various integrated circuit fabrication techniques that are conventionally used in the art, and only so much of the commonly practiced process steps are included herein as are necessary to provide an understanding of the present invention.
Generally speaking, the present invention contemplates modulating the stress characteristics of sidewall spacers in an integrated circuit fabrication process. A transistor gate structure is formed using conventional processing. A sidewall spacer layer or film is then deposited over the wafer and etched anisotropically to form the sidewall spacers. Either before or after the spacer etch, the stress characteristics of the as-deposited spacer film are modulated or altered. The spacer material modulation may be selective, e.g. affecting only transistors of a certain polarity, or non-selective (blanket). In one embodiment, the modulation process includes implanting the spacer material with an electrically neutral implant species at an energy sufficient to effect the breakdown of a significant portion of the spacer material bonds. Transistor processing is then resumed by implanting source/drain regions into the substrate and so forth. The stress modulated spacer material is theorized to have a reduced impact on transistor operating characteristics compared to the un-modulated spacer material. In an implementation in which the spacers are silicon nitride, as an example, the stress modulated nitride is believed to a have a reduced impact on the carrier mobility, especially in p-channel devices.
Referring now to
An upper portion of semiconductor substrate 102 typically includes a monocrystalline semiconductor material such as silicon on which gate dielectric 104 is formed. In one embodiment particularly suitable for use with low power applications such as mobile and wireless devices, semiconductor substrate 102 is a silicon-on-insulator (SOI) substrate in which the monocrystalline silicon is a relatively thin film (i.e., less than 10,000 angstroms) formed over a buried oxide (not shown) with a thickness roughly in the range of 1,000 to 20,000 angstroms.
Referring now To
Referring now to
Referring now to
One or more implant steps (not explicitly represented in
Referring now to
Referring now to FIG. 6A and
In the embodiments depicted in FIG. 6A and
The implant species may be an inert species such as Xenon or another species, such as Germanium, that is electrically neutral with respect to the transistor. Some implant species enable the use of a greater implant angle than others. In one embodiment of a Germanium implant, a 10 degree tilt is used at an implant energy of 80 keV and a dose of approximately 5×1014 ions/cm2. In a Xenon embodiment, in contrast, a 45 degree tilt may be used with an implant energy of 180 keV or more and a dose of 5×1014 ions/cm2. In addition to affecting the implant angle, the implant species may affect the choice of whether to use resist mask 150. Bombarding a dielectric that is tensile as deposited with Xenon, for example, is theorized to have a beneficial effect on the p-channel transistors, but a potentially detrimental effect on n-channel transistors whereas Germanium is theorized to have a beneficial effect on p-channel transistors without significantly affecting n-channel transistors. Thus, in one embodiment, resist mask 150 is employed in the case of a Xenon implant species to mask the n-channel devices from the implant while resist mask 150 is omitted in the case of a Germanium implant species.
Referring to
In either of the process sequences represented by FIG. 6A and
As shown in
Thus,
Referring now to
In
Although
In a variation on the process flow of
Thus it will apparent to those skilled in the art having the benefit of this disclosure that there has been provided, in accordance with the invention, a process for fabricating an integrated circuit that achieves the advantages set forth above. Although the invention has been described and illustrated with reference to specific illustrative embodiments thereof, it is not intended that the invention be limited to those illustrative embodiments. Those skilled in the art will recognize that variations and modifications can be made without departing from the spirit of the invention. It is therefore intended to include within the invention all such variations and modifications as fall within the scope of the appended claims and equivalents thereof.
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