To provide a sialon-based phosphor capable of forming a thin film by mixing it with a resin, and giving a uniform photoluminescent light with high light emission intensity, and to provide a method for producing a sialon-based phosphor not having excessively large agglomerated particles and a wide particle size distribution, there is provided a method for producing an α-sialon based phosphor represented by the formula:
mxlnySi12−(m+n)Al(m+n)OnN16−n
wherein m is at least one metal selected from Ca, Mg, Y and Li, ln is at least one lanthanide metal selected from Eu, Dy, Er, Tb, Yb and Ce, ax+by=m (assuming that the valence of metal m is a and the valence of lanthanide metal ln is b), 0<x≦1.5, 0.3≦m≦4.5, and 0<n<2.25), wherein the silicon nitride raw material used as the raw material is a silicon nitride raw material powder comprising amorphous silicon nitride and crystalline silicon nitride.
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1. A method for producing a sialon-based phosphor, comprising
mixing a silicon nitride raw material powder with an AlN-containing substance acting as an aluminum source, an oxide of metal m (wherein m is at least one metal selected from Ca, Mg, Y and Li) or a precursor substance to an oxide of metal m upon thermal decomposition, and an oxide of lanthanide metal ln or a precursor substance to an oxide of lanthanide metal ln upon thermal decomposition, and
firing the mixture at 1,400 to 2,000° C. in an inert gas atmosphere containing nitrogen to produce an α-sialon based phosphor represented by the formula:
mxlnySi12−(m+n)Al(m+n)OnN16−n wherein m is at least one metal selected from Ca, Mg, Y and Li, ln is at least one lanthanide metal selected from Eu, Dy, Er, Tb, Yb and Ce, ax+by=m (assuming that the valence of metal m is a and the valence of lanthanide metal ln is b), O<x≦1.5, 0.3≦m<4.5, and 0<n<2.25,
wherein said silicon nitride raw material powder comprises amorphous silicon nitride and crystalline silicon nitride.
2. The method for producing a sialon-based phosphor as claimed in
wherein the ratio of the crystalline silicon nitride in said silicon nitride raw material powder is from 5 to 95 wt %.
3. The method for producing a sialon-based phosphor as claimed in
4. The method for producing a sialon-based phosphor as claimed in
5. The method for producing a sialon-based phosphor as claimed in
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The present invention relates to a method for producing a material having a function of converting a part of irradiated light into light with a different wavelength from that of the irradiated light and, at the same time, mixing the converted light with the unconverted irradiated light to cause conversion into light having a different color. More specifically, the present invention relates to a method for producing a sialon-based phosphor activated with a rare earth metal element, which is used for a white light emitting diode (white LED) using a blue light emitting diode (blue LED) as the light source. The present invention also relates to a sialon-based phosphor obtained by the production method.
With recent implementation of blue LED in practical use, studies are being aggressively made to develop white LED by utilizing the blue LED. The white LED is low in power consumption and extended in life as compared with existing white light sources and therefore, its application to a liquid crystal panel backlight, an indoor or an outdoor illumination device, and the like, is proceeding.
The white LED developed at present is obtained by coating Ce-doped YAG (yttrium.aluminum.garnet) on the surface of a blue LED. However, the Ce-doped YAG has a photoluminescent wavelength in the vicinity of 530 nm and when this photoluminescent light and the light of blue LED are mixed to provide white light, the resulting color of the light is slightly blue-tinted and good white light cannot be obtained.
On the other hand, a sialon-based phosphor activated with a rare earth element is known to emit photoluminescent light with a longer wavelength (shifted to the red side) than the photoluminescent wavelength of Ce-doped YAG (see, Japanese Unexamined Patent Publication (Kokai) No. 2002-363554). When this photoluminescent light of sialon-based phosphor is mixed with the light of blue LED, good white light can be obtained. In this way, practical use of a sialon-based phosphor material as a new phosphor material is expected.
However, the phosphor having the composition disclosed in Japanese Unexamined Patent Publication (Kokai) No. 2002-363554 uses crystalline silicon nitride as the raw material and is produced by a hot-pressing method where the reaction into sialon is allowed to proceed while compressing the powder material. The sialon-based phosphor obtained by this method is in the lump form and is not suited for use as a phosphor powder.
The present inventors had attempted to obtain a sialon-based phosphor by mixing a crystalline silicon nitride powder with a calcium source, a rare earth element source and an aluminum source and firing it in an atmospheric pressure furnace. As a result, it was confirmed that a phosphor in the powder state can be obtained by selecting the appropriate particle size of silicon nitride and the reaction conditions, but the powder is a gathering of strongly agglomerated particles (hereinafter called a “agglomerated particles”) and the agglomerated particles have a large diameter and a broad and non-uniform particle size distribution. A phosphor comprising such agglomerated particles is improper for forming a thin film by mixing it with a resin and also, the photoluminescent light emitted therefrom is non-uniform and insufficient in the photoluminescent intensity.
The present invention has been made to solve these problems and an object of the present invention is to provide a method for producing a sialon-based phosphor not having a broad size distribution. Another object of the present invention is to provide a sialon-based phosphor, obtained by the method, which can form a thin film and give uniform photoluminescent light with high light emission intensity.
The present invention relates to a method for producing a sialon-based phosphor, comprising
In particular, the ratio of the crystalline silicon nitride in the silicon nitride raw material is preferably from 5 to 95 wt %.
In the production method of a sialon-based phosphor of the present invention, the specific surface area of the silicon nitride raw material powder is preferably from 15 to 300 m2/g.
Also, the silicon nitride raw material powder is preferably a silicon nitride powder obtained by thermally decomposing silicon diimide (Si(NH)2).
Furthermore, the production method of a sialon-based phosphor of the present invention is characterized in that the silicon nitride raw material is a silicon nitride powder containing both an amorphous component and a crystalline component, obtained by heat-treating an amorphous silicon nitride powder.
The present invention also relates to an α-sialon based phosphor represented by the formula:
MxLnySi12−(m+n)Al(m+n)OnN16−n
(wherein M is at least one metal selected from Ca, Mg, Y and Li, Ln is at least one lanthanide metal selected from Eu, Dy, Er, Tb, Yb and Ce, ax+by=m (assuming that the valence of metal M is a and the valence of lanthanide metal Ln is b), 0<x≦1.5, 0.3≦m<4.5, and 0<n<2.25), wherein the 50% size in the particle size distribution curve of the phosphor particles measured by a laser diffraction/scattering method is from 2 to 19 μm.
In the production method of a phosphor of the present invention, a silicon nitride powder where the ratio of crystalline silicon nitride is from 5 to 95 wt % is used as the raw material and therefore, the produced sialon-based phosphor particles undergo less aggregation, so that the phosphor particles can have appropriate size and distribution and are suited as a phosphor material for forming a thin film by mixing it with a resin and, also, a photoluminescent material of giving uniform photoluminescent light with high light emission intensity can be obtained.
The present invention is described in detail below. The α-sialon is obtained by solid-dissolving a slight amount of metal M in a composition comprising Si, Al, O and N, and this is represented by the following formula (1):
MxLnySi12−(m+n)Al(m+n)OnN16−n (1)
and the α-sialon based phosphor is obtained by displacing a part of the solid-dissolved metal M with a lanthanide metal Ln working as the center of light emission.
The metal M solid-dissolved is at least one metal selected from Ca, Mg, Y and Li, and the lanthanide metal Ln working as the center of light emission is at least one member selected from Eu, Dy, Er, Tb, Yb and Ce. In formula (1), assuming that the valence of metal M is a and the valence of lanthanide metal Ln is b, ax+by=m.
In formula (1), the factors m and n are 0.3≦m<4.5 and 0<n<2.25. If m and n are out of respective ranges, α-sialon is hardly formed and this is not preferred. The factors m and n are more preferably 1.0≦m≦3.5 and 0.5≦n≦2.0.
In the α-Sialon phosphor of the present invention, it is preferred that the metal M comprises (i) at least one of Ca, Mg and Y as well as (ii) Li, and this α-Sialon phosphor is represented by the following formula (2):
LizM′xLnySi12−(m+n)Al(m+n)OnN16−n
In formula (2), M′ is at least one metal selected from Ca, Mg and Y. Ln, m and n are as defined in formula (1). In formula (2), assuming that the valence of metal M is a and the valence of lanthanide metal Ln is b, z+ax+by=m. In formula (2), the factor z of Li is preferably larger than 0 and up to 0.8. The lithium mixed even in a very small amount exerts an effect and the photoluminescent intensity is remarkably enhanced. However, if z exceeds 0.8, the photoluminescent intensity tends to decrease. The content (factor z) of Li is more preferably from 0.01 to 0.3, still more preferably from 0.03 to 0.2. With the content in this range, a higher photoluminescent intensity can be obtained.
The color of the photoluminescent light of the phosphor where the metal M solid-dissolved in α-sialon is Ca and the lanthanide metal Ln is Eu is yellow (wavelength: about 560 to 590 nm) and this is optimal for obtaining white LED.
The method for producing an α-sialon based phosphor of the present invention is described below. The powder of the α-sialon based phosphor of the present invention is obtained by mixing (a) a silicon nitride powder containing both an amorphous component and a crystalline component, (b) a substance containing AlN and working as aluminum source, (c) an oxide of the metal M or a precursor substance to the oxide upon thermal decomposition, and (d) an oxide of the lanthanide metal Ln or a precursor substance to the oxide upon thermal decomposition to give a desired α-sialon composition, and firing the resulting mixed powder at 1,400 to 2,000° C. in a nitrogen-containing inert gas atmosphere. Here, the substance containing AlN and working as an aluminum source may be an AlN powder alone, a mixture of AlN powder and Al powder, or a mixture of AlN powder and a powder of Al oxide or a precursor substance to an Al oxide upon thermal decomposition, and this works as an Al source and/or a nitrogen or oxygen source of the α-sialon.
Examples of the precursor substances which become an oxide of Al, the precursor substances which become an oxide of metal M, and the precursor substances which become an oxide of lanthanide metal Ln upon thermal decomposition, include nitrides, hydroxides, carbonates and chlorides of respective elements.
More specifically, examples of the Al oxide and the precursor substance to Al oxide upon thermal decomposition include Al2O3 and Al(OH)3. Examples of the metal M oxide and the precursor substance to the oxide upon thermal decomposition include CaCO3, Ca(OH)2, CaCl2 and Ca(NO3)2, for example, in the case where M is Ca. Examples of the lanthanide metal Ln oxide and the precursor substance becoming a lanthanide metal Ln oxide upon thermal decomposition include Eu2O3, EuCl3, Eu(NO3)3 and Eu2(C2O4)3, for example, in the case where Ln is Eu. The Al oxide or the precursor to Al oxide upon thermal decomposition, the metal M oxide or the precursor substance to metal M oxide upon thermal decomposition, and the lanthanide metal Ln oxide or the precursor substance to the oxide upon thermal decomposition each is preferably used in the powder state.
If a crystalline silicon nitride powder is used as the raw material of silicon nitride powder, this has low reactivity and in a conventional powder synthesis method of mixing raw materials and firing the mixture in a crucible, a large amount of unreacted silicon nitride remains and the sialon powder cannot be efficiently produced. In order to accelerate the reaction, a method of accelerating the reaction, such as hot-pressing treatment, is necessary. In this method, the sialon is obtained as a lump like a sintered body. To obtain a phosphor powder from the lump, a grinding step is necessary but in the grinding step, contamination of impurities occurs and due to contamination of iron or the like harmful to the phosphor, the photoluminescent intensity decreases. In order to avoid such a problem, it is crutical to use, as the raw material, a silicon nitride powder containing both an amorphous component and a crystalline component, obtained by partially crystallizing silicon nitride. The partially crystallized silicon nitride powder has high reactivity and therefore, a sialon powder can be obtained by a simple method of mixing raw materials and firing the mixture in a crucible. The ratio of the crystalline silicon nitride in the silicon nitride raw material powder comprising amorphous silicon nitride and crystalline silicon nitride is preferably from 5 to 95 wt %. If the ratio of crystalline silicon nitride is less than 5%, the grain size of crystal obtained becomes too small and the photoluminescent intensity tends to rather decrease, whereas if the ratio exceeds 95%, the produced sialon powder undergoes strong agglomeration.
Also, when the ratio of crystalline silicon nitride in the silicon nitride raw material powder comprising amorphous silicon nitride and crystalline silicon nitride is from 5 to 95 wt %, the specific surface area of the raw material silicon nitride powder is approximately from 15 to 300 m2/g and this range is preferred because a sialon phosphor powder undergoing less aggregation and giving high light emission intensity can be easily obtained.
The silicon nitride powder containing both an amorphous component and a crystalline component can be efficiently obtained by heat-treating an amorphous silicon nitride powder. The silicon nitride powder obtained by heat-treating an amorphous silicon nitride powder has a small crystal particle size and advantageously allows a uniform reaction to readily proceed. The silicon nitride powder containing both an amorphous component and a crystalline component may also be prepared by mixing an amorphous silicon nitride powder and a crystalline silicon nitride powder.
The amorphous silicon nitride powder can be obtained by thermally decomposing silicon diimide (Si(NH)2) at about 700 to 1,100° C. in a nitrogen atmosphere.
The method for mixing these starting materials is not particularly limited and a known method such as a method of dry-mixing the starting materials or a method of wet-mixing the starting materials in an inactive solvent substantially incapable of reacting with each component of the raw materials and then removing the solvent, may be employed. As for the mixing device, a V-shaped mixer, a rocking mixer, a ball mill, a vibration mill, a medium stirring mill or the like is suitably used. However, the partially crystallized amorphous silicon nitride powder is very sensitive to water or moisture and therefore, the mixing of starting materials must be performed in a controlled inert gas atmosphere.
The mixture of starting materials may be preferably fired at 1,400 to 1,800° C., preferably from 1,500 to 1,800° C., in a nitrogen-containing inert gas atmosphere under 1 atm. or atmospheric pressure, whereby a desired α-sialon powder is obtained. If the firing temperature is less than 1,400° C., the production of the desired α-sialon powder requires heating for a long time and this is not practical. Also, the ratio of α-sialon phase in the produced powder decreases. On the other hand, if the firing temperature exceeds 1,800° C., this disadvantageously causes sublimation and decomposition of silicon nitride and sialon to produce free silicon.
The mixed powder of starting materials can also be fired at a temperature of 1,600 to 2,000° C., preferably from 1,600 to 1,900° C., in a pressurized nitrogen gas atmosphere. In this case, the pressurization with nitrogen gas prevents the silicon nitride and sialon from sublimation and decomposition at a high temperature and a desired α-sialon based phosphor can be obtained in a short time. By increasing the nitrogen gas pressure, the firing temperature can be elevated, but the mixed powder can be fired, for example, at 1,600 to 1,850° C. under a nitrogen gas pressure of 5 atm and at 1,600 to 2,000° C. under a nitrogen gas pressure of 10 atm.
The heating furnace used for the firing of powder mixture is not particularly limited and, for example, a batch electric furnace heated by a high frequency induction heating system or resistance heating system, a rotary kiln, a fluidized kiln or a pusher type electric furnace can be used.
The α-sialon based phosphor of the present invention is characterized in that aggregation less occurs and the size distribution is narrow as compared with those using a crystalline silicon nitride powder as the raw material. The 50% size in the particle size distribution curve of the α-sialon based phosphor of the present invention is from 2 to 19 μm, preferably from 3.5 to 17.5 μm. If the 50% size is less than 2 μm, the light emission intensity seriously decreases. This is considered to occur due to increase of defects on the particle surface. On the other hand, if the 50% size exceeds 19 μm, extremely non-uniform light emission intensity disadvantageously results due to aggregation of particles.
The α-sialon based phosphor activated with a rare earth element of the present invention may be kneaded with a transparent resin such as epoxy resin or acrylic resin by a known method to produce a coating agent, and a light emitting diode (LED) coated with this coating agent is used as a light conversion element.
Silicon diimide obtained by reacting silicon tetrachloride with ammonia at room temperature was decomposed under heating at a temperature in the range from 1,150 to 1,350° C. to obtain 6 kinds of a silicon nitride powder containing both an amorphous component and a crystalline component. The heating temperature of silicon diimide, and the crystallinity and the specific surface area of obtained silicon nitride powder are shown in Table 1.
The crystallinity was determined by hydrolyzing the amorphous component of the silicon nitride powder and measuring the weight of the residue.
With each of the obtained powders, an aluminum nitride powder, a calcium carbonate powder and a europium oxide powder which were weighed to give a composition of Ca0.525Eu0.15Si9.75Al2.25O0.75N15.25, were mixed by a vibration mill for 1 hour in a nitrogen atmosphere. The mixed powder was filled in an SiC-coated carbon crucible, the crucible was set in a high-frequency heating furnace, and the furnace was heated in a nitrogen gas atmosphere according to a temperature-increasing schedule of holding the furnace at from room temperature to 1,200° C. for 1 hour, at from 1,200 to 1,400° C. for 4 hours and at from 1,400 to 1,600° C. for 2.5 hours, whereby a sialon powder was obtained.
This powder was evaluated on photoluminescent properties by a photoluminescent measuring apparatus set to an excitation wavelength of 450 nm.
Silicon diimide obtained by reacting silicon tetrachloride with ammonia at room temperature was decomposed and crystallized under heating up to 1,550° C. to obtain a crystalline silicon nitride powder. With this raw material, an aluminum nitride powder, a calcium carbonate powder and a europium oxide powder which were weighed to give a composition of Ca0.525Eu0.15Si9.75Al2.25O0.75N15.25, were mixed by a vibration mill for 1 hour in a nitrogen atmosphere.
The mixed powder was filled in an SiC-coated carbon crucible, the crucible was set in a high-frequency heating furnace, and the furnace was heated in a nitrogen gas atmosphere according to a temperature-increasing schedule of holding the furnace at from room temperature to 1,200° C. for 1 hour, at from 1,200 to 1,400° C. for 4 hours and at from 1,400 to 1,600° C. for 2.5 hours, whereby a sialon powder was obtained. This powder was strongly agglomerated and the raw material in the crucible became one lump.
The lump was crushed in an agate mortar and then evaluated on photoluminescent properties by a photoluminescent measuring apparatus set to an excitation wavelength of 450 nm.
TABLE 1
Particle Size
Heating
Specific
Distribution of
Tem-
Crystal-
Surface
Sialon Powder
perature
linity
Area
10%
50%
90%
° C.
%
m2/g
size
size
size
Example 1
1150
11.8
227
0.5
2.5
12
Example 2
1170
35.4
150
0.7
3.8
21
Example 3
1190
50.3
105
0.9
7.2
37
Example 4
1250
76.5
40
1.3
12.1
40
Example 5
1300
84.6
27
1.6
15.3
51
Example 6
1350
89.4
15
1.9
19.1
83
Comparative
1550
100
10
2.1
30.2
131
Example 1
According to the production method of the present invention, a phosphor powder limited in the size of agglomerated powder and narrow in the particle size distribution can be obtained. This phosphor powder can be readily mixed with a resin or the like and coated on blue LED, and high-brightness white LED can be easily obtained.
Yamada, Tetsuo, Sakata, Shin-Ichi, Yamao, Takeshi
| Patent | Priority | Assignee | Title |
| 10266766, | Nov 13 2012 | Denka Company Limited | Phosphor, light-emitting element and lighting device |
| 7402943, | Mar 22 2004 | National Institute for Materials Science | Oxynitride phosphor and a light emitting device |
| 7910023, | Apr 28 2005 | National Institute for Materials Science | Lithium-containing sialon phosphor and method of manufactring the same |
| 8310143, | Aug 23 2006 | IDEAL Industries Lighting LLC | Lighting device and lighting method |
| 8497624, | Mar 01 2010 | UBE Corporation | Li-containing α-sialon-based phosphor particle, production method thereof, lighting device, and image display device |
| 8628687, | Jul 05 2006 | Ube Industries, Ltd. | Sialon-based oxynitride phosphor and production method thereof |
| 8883039, | Jul 01 2005 | National Institute for Materials Science | Fluorophor and method for production thereof and illuminator |
| 9677000, | Jul 01 2005 | National Institute for Materials Science | Fluorophor and method for production thereof and illuminator |
| Patent | Priority | Assignee | Title |
| 6657379, | Jul 16 2001 | OSRAM Opto Semiconductors GmbH; OSRAM OLED GmbH | Illumination unit having at least one LED as light source |
| 6670748, | Sep 25 2001 | OSRAM Opto Semiconductors GmbH; OSRAM OLED GmbH | Illumination unit having at least one LED as light source |
| 6674233, | Sep 20 2001 | Patent-Treuhand-Gesellschaft für Elektrische Glühlampen MbH | Illumination unit having at least one LED as light source |
| EP1445295, | |||
| JP2002363554, |
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