A hard bias (HB) structure for biasing a free layer in a mr sensor within a magnetic read head is comprised of a main biasing layer with a large negative magnetostriction (λS) value. compressive stress in the device after lapping induces a strong in-plane anisotropy that effectively provides a longitudinal bias to stabilize the sensor. The main biasing layer is formed between two fm layers, and at least one AFM layer is disposed above the upper fm layer or below the lower fm layer. Additionally, there may be a Ta/Ni or Ta/NiFe seed layer as the bottom layer in the HB structure. Compared with a conventional abutted junction exchange bias design, the HB structure described herein results in higher output amplitude under similar asymmetry sigma and significantly decreases sidelobe occurrence. Furthermore, smaller MRWu with a similar track width is achieved since the main biasing layer acts as a side shield.
|
1. A method of forming a hard bias structure in a magnetic read head based on an mr element, comprising:
(a) providing a substrate on which an mr element having a top surface and two sides and that is comprised of a free layer which has two sidewalls coincident with said sides is formed; and
(b) depositing a hard bias structure on the substrate on either side of the mr element wherein the hard bias structure abuts the sides of the mr element and is comprised of a hard bias (HB) layer formed between a lower fm layer and an upper fm layer and a first antiferromagnetic (AFM1) layer is disposed on the upper fm layer or below the lower fm layer, said HB layer has a sufficiently high negative λS value such that a compressive stress resulting from a lapping process will induce a strong in-plane anisotropy in said hard bias layer that effectively maintains a single magnetic domain state in the free layer.
10. A method of forming a hard bias structure in a magnetic read head based on an mr element, comprising:
(a) providing a substrate on which an mr element having a top surface and two sides and that is comprised of a free layer which has two sidewalls coincident with said sides is formed;
(b) depositing an insulation layer on the substrate and along the sides of the mr element; and
(c) depositing a hard bias structure on the insulation layer on either side of the mr element wherein the hard bias structure is comprised of a hard bias (HB) layer formed between a lower fm layer and an upper fm layer and a first antiferromagnetic (AFM1) layer is disposed on the upper fm layer or below the lower fm layer, said HB layer has a sufficiently high negative λS value such that a compressive stress resulting from a lapping process will induce a strong in-plane anisotropy in said hard bias layer that effectively maintains a single magnetic domain state in the free layer.
2. The method of
3. The method of
4. The method of
5. The method of
7. The method of
8. The method of
9. The method of
11. The method of
12. The method of
13. The method of
14. The method of
15. The method of
16. The method of
17. The method of
18. The method of
19. The method of
|
|||||||||||||||||||||||||||
This application is related to U.S. patent application Ser. No. 11/074,270 and filed Mar. 4, 2005, owned by a common assignee as the instant invention.
The invention relates to an improved abutted junction exchange (ABJ-EX) bias structure formed adjacent to a magnetoresistive (MR) sensor in a magnetic read head and a method for making the same. In particular, a high negative magnetostrictive ferromagnetic material is used as the main biasing layer in an ABJ-EX structure to suppress side-lobe occurrence while maintaining read back sensitivity.
In a magnetic recording device in which a read head is based on a tunneling magnetoresistive (TMR) sensor or a giant magnetoresistance (GMR) sensor, there is a constant drive to increase recording density. One method of accomplishing this objective is to decrease the size of the sensor element in the read head that is suspended over a magnetic disk on an air bearing surface (ABS). The sensor is a critical component in which different magnetic states are detected by passing a sense current there through and monitoring a resistance change. In a GMR configuration, two ferromagnetic layers are separated by a non-magnetic conductive layer in the sensor stack while in a TMR sensor, a tunnel barrier layer such as AlXOY separates the two ferromagnetic layers. One of the ferromagnetic layers is a pinned layer wherein the magnetization direction is fixed by exchange coupling with an adjacent anti-ferromagnetic (AFM) pinning layer. The second ferromagnetic layer is a free layer wherein the magnetization vector can rotate in response to external magnetic fields. In the absence of an external magnetic field, the magnetization direction of the free layer is aligned perpendicular to that of the pinned layer by the influence of hard bias layers on opposite sides of the sensor stack. When an external magnetic field is applied by passing the sensor over a recording medium on the ABS, the free layer magnetic moment may rotate to a direction which is parallel to that of the pinned layer.
A sense current is used to detect a resistance value which is lower when the magnetic moments of the free layer and pinned layer are in a parallel state. In a CPP configuration, a sense current is passed through the sensor in a direction perpendicular to the layers in the sensor stack. Alternatively, there is a current-in-plane (CIP) configuration where the sense current passes through the sensor in a direction parallel to the planes of the layers in the sensor stack.
Ultra-high density (over 100 Gb/in2) recording requires a highly sensitive read head in which the cross-sectional area of the sensor is typically smaller than 0.1×0.1 microns at the ABS plane. Current recording head applications are typically based on an abutting junction (ABJ) configuration in which a hard bias layer is formed adjacent to each side of a free layer in a GMR spin valve structure. As the recording density further increases and track width decreases, the junction edge stability becomes more important so that edge domain formations in the free layer are prevented. In other words, longitudinal biasing is necessary so that a single domain magnetization state in the free layer will be stable against all reasonable perturbations while the sensor maintains relatively high signal sensitivity.
In longitudinal biasing read head design, films of high coercivity material are abutted against the edges of the GMR sensor and particularly against the sides of the free layer. By arranging for the flux flow in the free layer to be equal to the flux flow in the adjoining hard bias layer, the demagnetizing field at the junction edges of the aforementioned layers vanishes because of the absence of magnetic poles at the junction. As the critical dimensions for sensor elements become smaller with higher recording density requirements, the minimum longitudinal bias field necessary for free layer domain stabilization increases.
A high coercivity in the in-plane direction is needed in the hard bias layer to provide a stable longitudinal bias that maintains a single domain state in the free layer and thereby avoids undesirable Barkhausen noise. This condition is realized when there is a sufficient in-plane remnant magnetization (Mr) which may also be expressed as Mrt since Mr is dependent on the thickness (t) of the hard bias layer. Mrt is the component that provides the longitudinal bias flux to the free layer and must be high enough to assure a single magnetic domain in the free layer but not so high as to prevent the magnetic field in the free layer from rotating under the influence of a reasonably sized external magnetic field.
Referring to
The ABJ-HB structure consists of a seed layer 4 formed on the substrate 2 and along each side of the sensor element 3, and the overlying hard bias layers 5 that have a proper microstructure due to the crystalline nature of the seed layers. The hard bias layers 5 form an abutting junction on either side of the free layer (not shown) in the sensor element 3. Leads 6 are provided on the hard bias layers 5 to carry current to and from the sensor element 3. The distance between the leads 6 defines the track width TW of the read head 1. Above the leads 6 and sensor element 3 are successively formed a second gap layer 7 and a second shield layer 8.
The conventional ABJ-HB design has been employed for magnetic sensor stabilization for several production generations. However, with further reduction of the magnetic read width (MRWu) to less than 0.3 microns, the ABJ-HB configuration tends to fail in producing sufficient biasing efficiency. In other words, the conventional ABJ-HB structure either reduces the sensor amplitude too much or causes a loss in sensor stability when the hard bias layer is either too thick or too thin. Moreover, the dead zone which is the area in the sensor element between the MRWu and the track width is always large. Therefore, further optimization in hard bias materials or in junction geometry is necessary to achieve high performance magnetic read heads that satisfy the newest design requirements.
In related art, an additional AFM layer is provided between a hard bias layer and an overlying lead in U.S. Pat. No. 6,779,248 so that there is no fall off in bias strength before the edge of the gap is reached. In U.S. Pat. No. 6,760,966, a soft magnetic layer is added above hard bias layers to provide flux closure to the hard bias layers and thereby prevent flux leakage into the gap region.
A magnetoresistive effect head with an improved output is described in U.S. Pat. No. 6,545,847 and includes a design wherein the hard bias structure is comprised of a stacked layer of an alloy of NiFe and an AFM film such as FeMn, NiMn, or CrMn. The hard bias structure is disposed on a seed layer and below an electrode.
In U.S. Pat. No. 5,754,376, a longitudinal bias applied to a soft magnetic layer is weak enough that the sense current flowing through the magnetoresistive (MR) conductive layer sufficiently magnetizes a SAL transversely.
U.S. Pat. No. 6,469,878 discloses exchange tabs which are formed above and adjacent outer portions of a free layer to bias the free layer. The exchange tabs are formed from the same AFM material as in the first pinning layer.
In U.S. Patent Application 2004/0105192, poor squareness and coercivity resulting from lattice distortion in a seed layer that contacts an AFM layer in a bottom spin valve is corrected by inserting a NiCr, NiFe, or Cr film between the seed layer and AFM layer thereby producing a smoother surface onto which the longitudinal bias structure is deposited.
A longitudinal bias layer comprised of an AFM layer formed over a ferromagnetic layer of Fe, Co, Ni, or NiFe which is disposed on either side of a protective film on a free layer is described in U.S. Pat. No. 6,338,899. The longitudinal bias structure may also be a laminate that includes an underlayer/FM layer/AFM layer configuration.
In U.S. Patent Application 2002/0191354, a sidewall layer is formed on a magneto-resistive element by oxidizing, nitrifying, fluoridating, carbonizing, sulfurating, or boronizing the side surface of the MR element. The specular reflecting effect is increased while the sidewall layer maintains the biasing effect of an adjacent hard bias structure.
A first objective of the present invention is to provide a hard bias structure for biasing a sensor element in a magnetic read head that suppresses side-lobes during a readback operation.
A further objective of the present invention is to provide a hard bias structure according to the first objective that also results in a higher output amplitude under a similar asymmetry sigma.
A still further objective of the present invention is to provide a method of making a hard bias structure for longitudinally biasing a free layer in a magnetoresistive sensor element according to the first two objectives.
According to a first embodiment, these objectives are achieved by providing a magnetoresistive (MR) sensor element with sidewalls and a top surface that is formed on a substrate in a magnetic read head. The MR sensor element can have a top spin valve, bottom spin valve, or multilayer structure that is formed along an ABS plane and is comprised of an AFM layer, a pinned layer, a free layer, and a capping layer. The pinned layer is pinned in a first direction perpendicular to the ABS plane and parallel to the top surface of the substrate by exchange coupling with an adjacent AFM layer. The free layer is separated from the pinned layer by a spacer (in a GMR sensor) or tunnel barrier layer (in a TMR sensor) and is longitudinally biased in a direction parallel to the ABS plane by a hard bias structure on either side of the MR sensor element. The hard bias structure is a stack of layers disposed on the substrate and along the sidewalls of a GMR-CIP sensor or on an Al2O3 insulation layer in a TMR or GMR-CPP sensor.
In one aspect, the hard bias stack has a seed/AFM1/FM/HB/FM/AFM2 configuration wherein the bottom seed layer has a composition and crystal structure that produces a sufficiently large exchange coupling field (HEX) and a small coercivity (HC). The AFM1 and AFM2 layers can be any antiferromagnetic film but preferably have a low critical thickness. Ni or another material with a high negative magnetostriction value (compressive stress) is selected as the main hard bias (HB) layer so that after the device is lapped, the resulting compressive stress will induce a strong in-plane anisotropy to produce a sufficient longitudinal bias for stabilization. The HB layer is sandwiched between two ferromagnetic (FM) layers to enhance the exchange coupling strength with the AFM1 and AFM2 layers. Optionally, the seed layer may be removed to reduce the spacing between the MR sensor element and HB layer. In an alternative embodiment, the AFM2 layer may be removed in order to reduce the shield to shield topography (sensor thickness) even though HEX may be decreased somewhat.
The present invention also encompasses a second embodiment wherein the hard bias stack has a seed/FM/HB/FM/AFM1 configuration. In this case, the composition and thicknesses of the layers within the hard bias stack are the same as in the first embodiment but the order of the layers is different. The hard bias stack of the second embodiment may be preferred when stabilizing a top spin valve sensor although a bottom spin valve sensor could also be stabilized by this configuration.
The hard bias stack is magnetized in a direction orthogonal to that of the pinned layer and parallel to the top surface of the MR sensor element. The hard bias structure is magnetically coupled to the free layer and provides a longitudinal (in-plane) bias that ensures a single magnetic domain within the free layer. In an embodiment where the MR sensor element is based on a GMR-CIP design, electrical leads are formed above the hard bias stack and contact the sensor along its sidewalls on or near the top surface of the capping layer. A second gap layer is formed on the leads and on the GMR-CIP sensor and a second shield is formed on the second gap layer to complete the magnetic read head. In an embodiment where the HB stack is formed on a first insulation layer near the sides of a GMR-CPP sensor or TMR sensor, a second insulation layer may be disposed on the HB structure and then a top shield is formed above the second insulation layer and sensor element. The first insulation layer separates the bottom and top shields to prevent a short circuit.
The present invention is also a method of forming a magnetic read head comprised of an improved hard bias structure according to the first and second embodiments. A MR sensor stack comprised of a free layer, pinned layer, an AFM layer, and a capping layer is formed on a substrate by a conventional method. Known methods are also employed to pattern a photoresist mask above the capping layer in the MR sensor stack. An etch process may be used to define a MR sensor element and a track width. In the case of a GMR-CIP sensor, a seed layer is deposited on exposed portions of the substrate adjacent to the sensor element. Next, the remainder of the hard bias stack is deposited on the seed layer and along a substantial portion of the sidewalls on the sensor element. The hard bias stack described in the first or second embodiment is formed by a magnetron sputtering or an ion beam deposition (IBD) method.
The hard bias structure may be magnetically aligned in a direction parallel to the top surface of the MR sensor element and parallel to the ABS by applying an external magnetic field during or after the deposition step. Electrical leads are subsequently formed on the hard bias structure by a conventional method. The photoresist layer is then removed by a lift-off process, for example. A second gap layer and second shield are sequentially formed on the electrical leads and GMR-CIP sensor by well known methods. Alternatively, the substrate is a bottom shield and an upper shield is formed on a GMR-CPP or TMR sensor and above an adjacent stack comprised of a first insulation layer, hard bias structure of the first or second embodiment, and optional second insulation layer by a conventional method.
The present invention is a hard bias configuration comprised of a main biasing layer with a high negative magnetostriction value (λS) that improves the performance of a magnetic read head based on a magnetoresistive (MR) sensor element. Although the exemplary embodiments describe GMR-CIP, GMR-CPP, or TMR sensors having a single spin valve, those skilled in the art will appreciate that the present invention may also apply to multilayer sensor designs based on a GMR, TMR, or spin valve magneto-resistive (SVMR) effect. The drawings are provided by way of example and are not intended to limit the scope of the invention. For example, the shape of a MR element in a magnetic device is not a limitation and the present invention encompasses any configuration wherein a hard bias stack as described in the first or second embodiment maintains a single magnetic domain in a free layer within the MR sensor element. Moreover, the MR sensor element may be comprised of either a top spin valve or a bottom spin valve. The present invention is also a method of forming a magnetic read head with a hard bias configuration wherein a main biasing layer with a high negative λS value significantly reduces sidelobe occurrence, provides better biasing efficiency, and has a smaller MRWU for a given track width.
An abutted-junction exchange bias (ABJ-EX) structure shown in
In
Ideally, a microtrack profile of a read head should appear as a symmetrical bell curve as depicted in
A first embodiment of the present invention is depicted in
The AFM layer may be a PtMn or IrMn layer that is magnetized in the y direction. The AFM layer is exchange coupled to the pinned layer that may be comprised of CoFe and which is pinned in the y direction. Optionally, the pinned layer may have a synthetic anti-parallel (SyAP) configuration wherein a coupling layer such as Ru is sandwiched between an AP2 pinned layer on the AFM layer and an overlying AP1 pinned layer. The free layer may be comprised of CoFe and/or NiFe, for example, and has a magnetic moment oriented in the x direction under the influence of a longitudinal bias from the adjoining ABJ-EX hard bias structure 39 which is magnetized in the x direction and will be described in a later section. The capping layer may be comprised of Ta or Ru or may be a composite layer based on a Ru/Ta/Ru configuration, for example. Other capping layers used in the art such as a composite layer comprised of NiCr on tantalum oxide are also acceptable.
In the presence of an appropriately sized external magnetic field which can be applied when the magnetic head 30 is passed over a magnetic recording medium in the z direction, the magnetization direction in the free layer within the sensor element 32 switches to the y or -y direction. In a GMR-CIP spin valve, the changed magnetic state in the free layer may be sensed by passing a current Is through the sensor element 32 to detect a lower resistance than when the magnetization of the pinned layer and free layer are orthogonal to each other.
An important feature of the present invention is the ABJ-EX hard bias structure 39 formed on the substrate 31 and adjacent to the sidewall on each side of the sensor element 32. In one aspect, the hard bias structure 39 is comprised of a stack of layers having a seed/AFM1/FM/HB/FM/AFM2 configuration wherein the main hard bias (HB) layer 36 has a high negative λS value. The seed layer 33 is preferably Ta/NiFe, Ta/Ni, Ta/Ru, Ta/Au, Ta/Cu or composites of the aforementioned combinations with NiCr or TiCr, for example, that produce a large enough exchange bias field (HEX) of greater than about 100 Oe and a small Hc of less than about 50 Oe. Optionally, the seed layer 33 may be made of Ni and one or more elements that satisfy the previously mentioned HEX and Hc requirements. In an example where the seed layer 33 is a Ta/NiFe composite layer, the lower Ta layer is from 10 to 50 Angstroms thick and the upper NiFe layer is from 10 to 30 Angstroms thick and has a Ni content of between 50 and 100 atomic %. The Ta/NiFe composite layer is especially advantageous in improving the (111) texture of an overlying AFM1 layer 34 that is comprised of IrMn.
The AFM1 layer 34 and AFM2 layer 38 may be any type of antiferromagnetic material such as IrMn, PtMn, NiMn, RuRhMn, PtCrMn or the like and are used to produce a larger HEX value. However, IrMn and RuRhMn are preferred because of their low critical thicknesses of 30 Angstroms and about 50 Angstroms, respectively. It should be understood that for a disordered structure which is characteristic of ABJ-EX hard bias structure 39, no annealing is required to achieve HEX. The thickness of the AFM1 layer 34 is between 45 and 70 Angstroms and the thickness of the AFM2 layer 38 is from 45 to 70 Angstroms. In one embodiment, the AFM1 layer 34 and AFM2 layer 38 are made from the same material. Alternatively, the AFM1 and AFM2 layers are comprised of different materials. Furthermore, the AFM2 layer 38 may be omitted when reducing the gap spacing and yet maintaining similar shield to shield topography. In other words, when the sensor element 32 is a GMR-CIP spin valve, removing the AFM2 layer 38 in the ABJ-EX hard bias structure 39 reduces the distance between the first gap 31 and second gap 41 but the distance between the bottom shield (not shown) and top shield 42 may remain the same.
The HB layer 36 is sandwiched between two ferromagnetic (FM) layers 35, 37 which are employed to enhance the exchange coupling strength between the HB layer and the AFM1 layer 34 and AFM 2 layer 38. In one embodiment, the FM layers 35, 37 have a thickness between 5 and 30 Angstroms and are preferably comprised of CoFe which has an Fe content of from 20 to 40 atomic % when a large HEX is desired. More preferably, the Fe content in CoFe is 25 atomic %. Optionally, other ferromagnetic materials such as NiFe and CoNiFe may be used as the FM layers 35, 37.
A key component of the hard bias structure 39 is the HB layer 36 that has a thickness of from 50 to 400 Angstroms and is preferably a negative magnetostriction material having a λS greater than about −1×10−6 which may be otherwise represented as |λS|>1×106 wherein λS is a negative value. In particular, Ni is preferred as the HB layer 36 and has the advantage over prior art HB layers in ABJ-EX designs because of its high electrical conductivity that leads to improved junction conductivity. Alternatively, other high negative λS materials such as NiMFeN wherein M and N represent the atomic % of Ni and Fe, respectively, and wherein M+N=100, M is about 90, and N is about 10 may be used as the HB layer 36. By adjusting the HB layer 36 thickness, the desired Mrt, HEX, and λS values can be achieved. During the fabrication method practiced by the inventors, a compressive stress exists after the device is lapped. Thus, when a high negative magnetostriction material such as Ni or Ni90Fe10 is employed as the HB layer 36, the compressive stress will induce a strong in-plane anisotropy that produces an effective longitudinal biasing layer and thereby stabilizes the sensor element 32.
Above the hard bias structure 39 on each side of the sensor element 32 is a lead or electrode 40. The leads may be a composite layer in which a thicker conductive layer such as Au or Cu is sandwiched between thinner Ta layers. In one embodiment (not shown), the leads 40 are comprised of a 30 Angstrom thick first Ta layer on the hard bias structure 39, a 400 Angstrom thick gold or copper layer on the first Ta layer, and a 30 Angstrom thick second Ta layer on the gold or copper layer. The distance between the leads 40 on the top surface 32b is the track width (TW) of the read head 30. The remainder of the read head 30 is comprised of a second gap layer 41 formed on the leads 40 and top surface 32b and a second shield 42 on the second gap layer.
TABLE 1
Magnetic properties of various Ni-based
ABJ-EX stacks with different seed layers
Seed layer
Biasing layer configuration
Mrt
Hex (Oe)
Hc (Oe)
Ta30/NiFe20
IrMn50/FM20/Ni330/FM20/IrMn50
2.15
123
25
Ta30/NiFe20
IrMn50/FM20/Ni250/FM20/IrMn50
1.79
153
6
Ta30/NiFe20
IrMn50/FM10/Ni400/FM10/IrMn50
2.22
96
12
Ta30/NiFe20
IrMn50/FM10/Ni200/FM10/IrMn50
1.38
188
6
Ta30/NiFe20
IrMn50/FM10/Ni170/FM10/IrMn50
1.09
221
21
Ta30/NiFe20
IrMn50/FM10/Ni150/FM10/IrMn50
0.99
262
22
Ta30/NiFe20
IrMn50/FM10/Ni130/FM10/IrMn50
0.88
288
13
Ta30/Ni20
IrMn50/FM10/Ni170/FM10/IrMn50
1.09
239
9
Ta30/Ni20
IrMn50[FM10/Ni130/FM10/IrMn50] × 2
1.76
269
28
Results in Table 1 are from an experiment where the FM layers are Co75Fe25. In this ABJ-EX biasing design, the inventors have found that Ni effectively acts as a side shield. As a result, some benefit is achieved in reducing the MRWU. For instance, a smaller MRWu is achieved in the present invention compared with a conventional ABJ-HB design for a similar photo critical dimension (CD) in the sensor element. The sensor element CD is the width of the top surface 32b also known as the track width (TW). Because of its intrinsic better longitudinal biasing efficiency compared with that of a conventional ABJ-HB design or an earlier version (AFM1/HB/AFM2) of an ABJ-EX stack such as seed/IrMn50/NiFe300/IrMn50, the ABJ-EX biasing configuration of the present invention should show better output/asymmetry sigma performance. Indeed, the advantages including a lower MRWu, better output amplitude, and improved asymmetry sigma have been confirmed. Another important advantage is that sidelobe occurrence in the microtrack profiles has been completely removed on five wafers (substrates) tested thus far.
As indicated by the last entry in Table 1, the present invention also anticipates a multilayer hard bias configuration represented by seed/AFM1[FM/HB/FM/AFM2]x2 in which two FM/HB/FM/AFM2 stacks are formed on the AFM1 layer.
As illustrated in
In order to stabilize a GMR-CPP or TMR type of sensor, the Mrt of the HB layer 36 has to be larger than for a GMR-CIP sensor since the free layer and HB layer are separated by the insulation layer 53. Furthermore, the seed layer 33 may be removed to reduce the spacing between the free layer (not shown) and HB layer 36 and thereby increase the biasing strength. The advantages of high output amplitude, better asymmetry sigma, lower MRWu, and reduced sidelobe occurrence are also realized when the hard bias structure 39 of the present invention is used to stabilize a GMR-CPP or TMR sensor in a read head. Additionally, the magnetic read head resistivity (MRR) can be reduced significantly, especially for TMR applications.
TABLE 2
DP performance comparison between ABJ-HB
and Ni-based ABJ-EX biasing schemes
Spi
Slider
MRWu50/
Asym.
TAAL
S/N
Design
MRR
MRWu
MRWu10
σ
(mV)
t2 (dB)
ABJ-HB
47
0.118
47.3
11.9
1.14
13.8
ABJ-EX
43.3
0.112
47.7
11.2
1.25
14.1
Results in Table 2 compare the DP (dynamic probing for device in a hard drive like environment) performance of a conventional ABJ-HB design to the Ni-based ABJ-EX scheme of the present invention. Under similar output asymmetry sigma, the output amplitude (TML) is higher for the ABJ-EX biasing scheme with improved MRWu, signal to noise (S/N) ratio, and MRWu50/MRWu10 which is a measure of the microtrack profile sharpness or resolution. Additionally, the slider MRR is significantly reduced in the ABJ-EX example for a read head with a GMR-CIP sensor. This MRR reduction becomes even greater when the improved ABJ-EX biasing configuration of the present invention is applied in TMR sensor stabilization.
A second embodiment of the present invention is depicted in
The leads 40 are formed on the AFM1 layer 34 on either side of the sensor element 32. The second gap layer 41 and second shield 42 are successively formed on the leads 40 and top surface 32b of the sensor element as in the first embodiment.
Alternatively, the HB structure 43 may be used to stabilize a GMR-CPP or TMR sensor as depicted in
The present invention is also a method of fabricating a stabilized magnetic read head having a high output amplitude with reduced MRWu and essentially no sidelobe occurrence in the microtrack profiles from a readback operation. The method involves the formation of a hard biasing configuration adjacent to the sensor element as described in the first or second embodiments.
Referring to
An important feature of the present invention is the hard bias structure 39 which is deposited by a sputtering or IBD method on the first gap layer 31. A seed layer 33 such as Ta/NiFe or Ta/Ni may be deposited on exposed regions of the first gap layer 31 and along a portion of the sensor element 32 by a sputtering method or ion beam deposition (IBD). The remainder of the hard bias structure 39 is comprised of an AFM1/FM/HB/FM/AFM2 configuration that was described in the first embodiment. The layers 34-38 are deposited in sequential order and preferably in the same process tool that may be an Anelva 7100 system or the like which includes ultra high vacuum sputter chambers and oxidation chambers and has the capability to form all layers in the hard bias structure 39 after a single pump down step. Alternatively, the AFM2 layer 38 is omitted when a seed/AFM1/FM/HB/FM configuration is employed. One or more of the layers in the hard bias structure may be annealed during or after deposition as is understood by those skilled in the art. In particular, the AFM1 layer 34 and AFM2 layer 38 can be annealed to improve the exchange bias field.
It should be understood that a similar process is used to form the hard bias structure 43 shown in
Continuing with
Referring again to
The properties of the hard bias structure 39 of the present invention are very stable with or without annealing. Although no annealing is necessary, the hard bias structure 39 may be annealed by heating the substrate 31 at a temperature of about 200° C. to 250° C. in a N2 ambient for a period of about 0.5 to 5 hours.
Those skilled in the art will appreciate that a similar process sequence is followed in a second embodiment except that the hard bias structure 39 is replaced by the hard bias structure 43 on substrate 31. In this case, leads 40 are formed on the AFM1 layer 34 on each side of the sensor element 32 followed by a lift off process to remove the photoresist mask and then formation of the second gap layer 41 and second shield 42 as shown in
In an embodiment where a GMR-CPP or TMR read head 50 (
A photoresist layer 56 having a width w2 is patterned on the top surface 52b of the sensor stack and then an IBE process is used to remove regions of the sensor stack that are not covered by the photoresist layer. Preferably, an undercut profile is generated adjacent to the top surface 52b at the bottom corners of the photoresist layer 56 to facilitate a subsequent lift-off step. The etch stops on the substrate 51 and typically generates a sensor element 52 having sloped sidewalls such that the bottom surface 52a has a width greater than w2.
After the IBE process, a first insulation layer 53 preferably comprised of Al2O3 is deposited to a thickness of about 50 to 250 Angstroms by a chemical vapor deposition (CVD) or physical vapor deposition (PVD) on the sidewalls of the sensor element 52 and on the first shield 51. Next, the hard bias structure 39 is deposited on the first insulation layer 53 by an IBD method as described previously. The AFM2 layer 38 may be omitted in some applications. An annealing step may be performed during or after deposition of certain layers in the hard bias structure 39. Optionally, a second insulation layer 54 comprised of Al2O3 may be deposited on the hard bias structure 39 by a CVD or PVD technique.
Returning to
It should be understood that a similar sequence may be followed except that the hard bias structure 39 is replaced by the hard bias structure 43 on the first insulation layer 53 to form the read head 50 shown in
While this invention has been particularly shown and described with reference to, the preferred embodiment thereof, it will be understood by those skilled in the art that various changes in form and details may be made without departing from the spirit and scope of this invention.
Sakai, Masanori, Zhang, Kunliang, Torng, Chyu-Jiuh, Li, Yunfei, Takano, Kenichi, Wang, Po-Kang
| Patent | Priority | Assignee | Title |
| 8316527, | Apr 01 2008 | Western Digital Technologies, INC | Method for providing at least one magnetoresistive device |
| 8349195, | Jun 27 2008 | Western Digital Technologies, INC | Method and system for providing a magnetoresistive structure using undercut free mask |
| 8373947, | Sep 29 2011 | TDK Corporation | Magnetic head slider including protective film for head-to-medium spacing detecting element |
| 8422176, | Nov 15 2011 | Western Digital Technologies, INC | Method and system for providing a magnetic read transducer having a bilayer magnetic seed layer |
| 8580580, | Apr 01 2010 | Seagate Technology LLC | Magnetic element with varying areal extents |
| 8611054, | Apr 11 2012 | Western Digital Technologies, INC | Antiferromagnetically-coupled soft bias magnetoresistive read head, and fabrication method therefore |
| 8614864, | Apr 01 2008 | Western Digital Technologies, INC | Magnetoresistive device with a hard bias capping layer |
| 9007725, | Oct 07 2014 | Western Digital Technologies, INC | Sensor with positive coupling between dual ferromagnetic free layer laminates |
| 9196270, | Dec 07 2006 | Western Digital Technologies, INC | Method for providing a magnetoresistive element having small critical dimensions |
| 9449621, | Mar 26 2015 | Western Digital Technologies, INC | Dual free layer magnetic reader having a rear bias structure having a high aspect ratio |
| 9922672, | Mar 26 2015 | Western Digital Technologies, INC | Dual free layer magnetic reader having a rear bias structure having a high aspect ratio |
| Patent | Priority | Assignee | Title |
| 5754376, | Sep 12 1995 | Hitachi Metals, Ltd. | Magnetoresistive head with hard magnetic bias |
| 6249407, | Feb 05 1999 | Fujitsu Limited | Magnetoresistive device having a tantalum layer connected to a shielding layer via a layer of a body-centered cubic structure |
| 6262869, | Aug 02 1999 | Western Digital Technologies, INC | Spin valve sensor with encapsulated keeper layer and method of making |
| 6338899, | Jun 30 1998 | Kabushiki Kaisha Toshiba | Magnetoresistance effect element, magnetic head, magnetic head assembly, magnetic storage system |
| 6340533, | Nov 19 1999 | Western Digital Technologies, INC | Spin-valve magnetoresistance sensor and thin film magnetic head |
| 6469878, | Feb 11 1999 | Seagate Technology LLC | Data head and method using a single antiferromagnetic material to pin multiple magnetic layers with differing orientation |
| 6545847, | Feb 14 1996 | Western Digital Technologies, INC | Magnetoresistive effect head |
| 6621666, | Mar 02 2000 | Sony Corporation | Magnetoresistive-effect element having electrode layers oppositely disposed on main surfaces of a magnetoresistive-effect thin film having hard magnetic bias layers with a particular resistivity |
| 6760966, | Apr 30 2002 | Headway Technologies, Inc. | Process of manufacturing a side reading reduced GMR for high track density |
| 6779248, | Mar 07 2002 | Headway Technologies, Inc. | Method of manufacturing a lead overlay bottom spin valve with improved side reading |
| 20040105192, | |||
| 20040191354, |
| Executed on | Assignor | Assignee | Conveyance | Frame | Reel | Doc |
| Feb 24 2005 | SAKAI, MASANORI | Headway Technologies, Inc | ASSIGNMENT OF ASSIGNORS INTEREST SEE DOCUMENT FOR DETAILS | 016366 | /0449 | |
| Feb 24 2005 | ZHANG, KUNLIANG | Headway Technologies, Inc | ASSIGNMENT OF ASSIGNORS INTEREST SEE DOCUMENT FOR DETAILS | 016366 | /0449 | |
| Feb 24 2005 | TAKANO, KENICHI | Headway Technologies, Inc | ASSIGNMENT OF ASSIGNORS INTEREST SEE DOCUMENT FOR DETAILS | 016366 | /0449 | |
| Feb 24 2005 | TORNG, CHYU-JIUH | Headway Technologies, Inc | ASSIGNMENT OF ASSIGNORS INTEREST SEE DOCUMENT FOR DETAILS | 016366 | /0449 | |
| Feb 24 2005 | LI, YUNFEI | Headway Technologies, Inc | ASSIGNMENT OF ASSIGNORS INTEREST SEE DOCUMENT FOR DETAILS | 016366 | /0449 | |
| Feb 24 2005 | WANG, PO-KANG | Headway Technologies, Inc | ASSIGNMENT OF ASSIGNORS INTEREST SEE DOCUMENT FOR DETAILS | 016366 | /0449 | |
| Mar 04 2005 | Headway Technologies, Inc. | (assignment on the face of the patent) | / |
| Date | Maintenance Fee Events |
| Mar 21 2011 | M1551: Payment of Maintenance Fee, 4th Year, Large Entity. |
| May 15 2015 | REM: Maintenance Fee Reminder Mailed. |
| Oct 02 2015 | EXP: Patent Expired for Failure to Pay Maintenance Fees. |
| Date | Maintenance Schedule |
| Oct 02 2010 | 4 years fee payment window open |
| Apr 02 2011 | 6 months grace period start (w surcharge) |
| Oct 02 2011 | patent expiry (for year 4) |
| Oct 02 2013 | 2 years to revive unintentionally abandoned end. (for year 4) |
| Oct 02 2014 | 8 years fee payment window open |
| Apr 02 2015 | 6 months grace period start (w surcharge) |
| Oct 02 2015 | patent expiry (for year 8) |
| Oct 02 2017 | 2 years to revive unintentionally abandoned end. (for year 8) |
| Oct 02 2018 | 12 years fee payment window open |
| Apr 02 2019 | 6 months grace period start (w surcharge) |
| Oct 02 2019 | patent expiry (for year 12) |
| Oct 02 2021 | 2 years to revive unintentionally abandoned end. (for year 12) |