A method for forming a PECVD deposited ashable hardmask (AHM) with less than 30% H content at a process temperature below 500° C., e.g., about 400° C. produces low H content hard masks having the property of high selectivity of the hard mask film to the underlying layers for successful integration of the film, and are suitable for use with 193 nm generation and below lithography schemes wherein high selectivity of the hard mask to the underlying layers is required. The low temperature, low H films are produced by use of a pulsed film hydrocarbon precursor plasma treatment that reduces the amount of hydrogen incorporated in the film and therefore drives down the etch rate of the hard mask thus increasing the selectivity. The lower temperature process also allows reduction of the overall thermal budget for a wafer.

Patent
   7381644
Priority
Dec 23 2005
Filed
Dec 23 2005
Issued
Jun 03 2008
Expiry
Dec 23 2025
Assg.orig
Entity
Large
421
104
EXPIRED
24. A method of forming an ashable hard mask, comprising:
providing a semiconductor device substrate in a deposition chamber;
depositing on the substrate an ashable hard mask by a plasma enhanced chemical vapor deposition (PECVD) process, the process comprising:
a process temperature of less than 500° C.,
a pulsed delivery flow of a hard mask precursor to the deposition chamber with a duty cycle of less than 100%, and a plasma treatment during a time when the precursor flow is off.
1. A method of forming an ashable hard mask, comprising:
providing a semiconductor device substrate in a deposition chamber;
depositing on the substrate an ashable hard mask film by a plasma enhanced chemical vapor deposition (PECVD) process wherein the process temperature is below 500° C. and the resulting hard mask has a hydrogen content of less than 30%, the deposition process comprising a pulsed delivery flow of a hard mask precursor to the deposition chamber with a duty cycle of less than 100%; and,
treating the deposited film with a plasma, during a time when the precursor flow is off.
28. A method of modulating hydrogen content in a deposited ashable hard mask, comprising:
determining a base ashable hard mask hydrogen concentration resulting from deposition using plasma enhanced chemical vapor deposition (PECVD) process parameters comprising a static hard mask precursor delivery flow to the deposition chamber;
providing a semiconductor device substrate in a deposition chamber; and
depositing on the substrate an ashable hard mask by the plasma enhanced chemical vapor deposition (PECVD) process altered such that the precursor delivery flow is pulsed, and the plasma power is on during a time when the precursor flow is off;
whereby the hydrogen content in the resulting deposited ashable hard mask is less than the base ashable hard mask hydrogen concentration.
2. The method of claim 1, wherein the plasma power is higher when the precursor flow is off.
3. The method of claim 1, wherein the precursor flow and plasma power “on” pulses do not overlap.
4. The method of claim 1, wherein the process temperature is between about 300 and 400° C.
5. The method of claim 1, wherein the process temperature is about 400° C.
6. The method of claim 1, wherein the resulting hard mask has a hydrogen content of less than 25%.
7. The method of claim 6, wherein the resulting hard mask has a hydrogen content of less than 20%.
8. The method of claim 7, wherein the resulting hard mask has a hydrogen content of about 15%.
9. The method of claim 1, wherein the pulsed precursor delivery flow has a frequency of between about 0.05 and 1 Hz.
10. The method of claim 9, wherein the pulsed precursor delivery flow has a frequency of between about 0.09 and 0.2 Hz.
11. The method of claim 10, wherein the pulsed precursor delivery flow has a frequency of between about 0.1 and 0.15 Hz.
12. The method of claim 11, wherein the pulsed precursor delivery flow has a frequency of about 0.1 Hz.
13. The method of claim 12, wherein the duty cycle of the pulsed precursor delivery flow is between 10 and 50%.
14. The method of claim 13, wherein the duty cycle of the pulsed precursor delivery flow is between 20 and 40%.
15. The method of claim 14, wherein the duty cycle of the pulsed precursor delivery flow is about 25%.
16. The method of claim 1, wherein the plasma pulse frequency is synchronized with the precursor pulse frequency such that the power is lower when the precursor flow is on and higher when the precursor flow is off.
17. The method of claim 16, wherein the deposition process further comprises a carrier gas flow.
18. The method of claim 17, wherein the carrier gas flow is pulse modulated in synchrony with the precursor pulse frequency such that the carrier gas flow is lower when the precursor flow is on and higher when the precursor flow is off.
19. The method of claim 18, wherein the deposition process further comprises a chamber pressure.
20. The method of claim 19, wherein the chamber pressure is pulse modulated in synchrony with the precursor pulse frequency such that the chamber pressure is higher when the precursor flow is on and lower when the precursor flow is off.
21. The method of claim 1, wherein the precursor is a hydrocarbon.
22. The method of claim 21, wherein the precursor is a hydrocarbon defined by the formula CXHY, wherein X=2 to 10 and Y=2–24.
23. The method of claim 22, wherein the precursor is ethylene.
25. The method of claim 24, wherein the resulting hard mask has a hydrogen content of less than 30%.
26. The method of claim 24, wherein the process comprises a process temperature of no more than about 400° C., a pulsed delivery flow of a hard mask precursor to the deposition chamber having a frequency of between about 0.05 and 1 Hz with a duty cycle of less than 50%, and the resulting hard mask has a hydrogen content of less than 20%.
27. The method of claim 24, wherein the deposition process further comprises a pulsed plasma power, carrier gas flow and chamber pressure characteristics, and:
the plasma pulse frequency is synchronized with the precursor pulse frequency such that the power is lower when the precursor flow is on and higher when the precursor flow is off;
the carrier gas flow is pulse modulated in synchrony with the precursor pulse frequency such that the carrier gas flow is lower when the precursor flow is on and higher when the precursor flow is off; and
the chamber pressure is pulse modulated in synchrony with the precursor pulse frequency such that the chamber pressure is higher when the precursor flow is on and lower when the precursor flow is off.
29. The method of claim 28, wherein the deposition process parameters further comprise a process temperature of less than 500° C. and the resulting hard mask has a hydrogen content of less than 30%.
30. The method of claim 28, wherein the precursor delivery flow is pulsed at a frequency of between about 0.05 and 1 Hz with a duty cycle of less than 50%.
31. The method of claim 30, wherein the deposition process parameters further comprise a process temperature of less than 400° C. and the resulting hard mask has a hydrogen content of less than 20%.

This invention relates to a novel method of producing ashable hard masks in semiconductor processing.

Ashable hard masks (AHM) are used as etch stop layers in semiconductor processing. Etch selectivity of AHM is influenced primarily by the incorporated concentration of hydrogen. Reducing the amount of hydrogen incorporated in the film drives down the etch rate of the hard mask, thus increasing the selectivity.

To date, known methods of producing AHM with low hydrogen (H) content (e.g., below 20%) rely on a relatively high temperature (greater than 500°) PECVD deposition process. Many PECVD reactors are not designed to withstand such high processing temperatures, however. At backend process temperatures of about 400° C. and below, films typically have a high hydrogen content (about 40%) and corresponding relatively low etch selectivity. Accordingly, it would be desirable to be able to produce a hard mask film with a low hydrogen content (e.g., less than 30%, or 20%) and high etch selectivity at a relatively low deposition temperature (below 500° C., e.g., no more than 400° C.).

The present invention addresses this need by providing a method for forming a PECVD deposited ashable hardmask (AHM) with less than 30 atomic % H content (e.g., less than 20% H content) at a process temperature below 500° C., e.g., about 400° C. Low H content hard masks produced according to the invention have the property of high selectivity of the hard mask film to the underlying layers for successful integration of the film, and are suitable for use with 193 nm generation and below lithography schemes wherein high selectivity of the hard mask to the underlying layers is required. The low temperature, low H films are produced by use of a pulsed film hydrocarbon precursor plasma treatment that reduces the amount of hydrogen incorporated in the film and therefore drives down the etch rate of the hard mask thus increasing the selectivity. The lower temperature process also allows reduction of the overall thermal budget for a wafer.

The invention provides low temperature, low H hard mask films produced by use of a pulsed film hydrocarbon precursor plasma treatment. The pulsed delivery of the precursor reduces the amount of hydrogen incorporated in the resulting film and therefore drives down the etch rate of the hard mask thus increasing the selectivity. Other deposition process parameters, including plasma power, carrier gas flow and chamber pressure, may also be pulsed or modulated. The pulse characteristics can be varied by varying the pulse repetition frequency (frequency of turning the pulse ON and OFF) and duty cycle (fraction of time during which the precursor pulse is ON). For example, for a pulse with a frequency of 0.1 Hz and duty cycle of 40%, one pulse period is 10 seconds with precursor pulse being ON for only 4 seconds. This additional pulsing can enhance the effect in certain applications. Generally, the hydrogen content of the resulting hard mask may be modulated by pulsing of the hard mask precursor delivery alone or in combination with one or more other deposition process parameters.

Deposition of an ashable hard mask by a plasma enhanced chemical vapor deposition (PECVD) process wherein the process temperature is below 500° C. and the resulting hard mask has a hydrogen content of less than 30% can be accomplished by a deposition process including a pulsed delivery flow of a hard mask precursor to the deposition chamber. The ashable hard mask is deposited on the substrate by a plasma enhanced chemical vapor deposition (PECVD) process wherein the process temperature of below 500° C. (e.g., no more than 400° C., or 300–400° C. or about 400° C.) wherein the precursor delivery flow is pulsed (i.e., has a duty cycle of less than 100%; e.g., 10 to 50%, 20 to 40%, such as 25 or 40%). The pulsed precursor delivery flow can have a frequency of between about 0.05 and 1 Hz, or about 0.09 and 0.2 Hz, or about 0.1 and 0.15 Hz, for example about 0.1 Hz.

These and other aspects and advantages of the invention are described further below and with reference to the drawings.

FIG. 1 depicts important stages in a general process flow for a method of forming an ashable hard mask in accordance with the present invention.

FIG. 2 depicts important stages in a general process flow for a method of forming an ashable hard mask in accordance with a specific embodiment of the present invention.

FIG. 3 depicts a timing sequence diagram for one specific embodiment of the invention.

FIG. 4 depicts a timing sequence diagram for another specific embodiment of the invention.

FIG. 5 is a simple block diagram depicting a PECVD reactor arranged for implementing the present invention.

FIG. 6 depicts a histogram plot showing the effect of varying the precursor pulse frequency in accordance with one aspect of the present invention.

FIG. 7 depicts a histogram plot showing the effect of varying the precursor pulse duty cycle in accordance with one aspect of the present invention.

FIG. 8 is a table showing data illustrating the effect of varying the number of precursor pulses in a hard mask film deposition process in accordance with one aspect of the present invention.

Reference will now be made in detail to specific embodiments of the invention. Examples of the specific embodiments are illustrated in the accompanying drawings. While the invention will be described in conjunction with these specific embodiments, it will be understood that it is not intended to limit the invention to such specific embodiments. On the contrary, it is intended to cover alternatives, modifications, and equivalents as may be included within the spirit and scope of the invention as defined by the appended claims. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. The present invention may be practiced without some or all of these specific details. In other instances, well known process operations have not been described in detail in order not to unnecessarily obscure the present invention.

Hard masks are used as etch stop layers in semiconductor processing. Ashable hard masks (AHM) have a chemical composition that allows them to be removed by a technique referred to as ashing once they have served their purpose. An ashable hard mask is generally composed of carbon & hydrogen with trace amount of on eor more dopants (e.g., Nitrogen, Fluorine, Boron, Silicon). The bonding structure in these hard masks can vary from SP2 (graphite-like) to SP3 (diamond-like) or a combination of both, depending on the deposition conditions. In a typical application, after etching, the hard mask has served its purpose and must be removed from the underlying dielectric oxide (e.g., SiO2). This is generally accomplished, at least in part, by ashing, also referred to as “plasma ashing” or “dry stripping.” Substrates with hard masks to be ashed, generally partially fabricated semiconductor wafers, are placed into a chamber under vacuum, and oxygen is introduced and subjected to radio frequency power which creates oxygen radicals (plasma). The radicals react with the hard mask to oxidize it to water, carbon monoxide, and carbon dioxide. In some instances, complete removal of the hard mask may be accomplished by following the ashing with additional wet or dry etching processes, for example when the ashable hard mask leaves behind any residue that cannot be removed by ashing alone.

Etch selectivity of AHM is influenced primarily by the incorporated concentration of hydrogen. Reducing the amount of hydrogen incorporated in the film drives down the etch rate of the hard mask, thus increasing the selectivity relative to an underlying oxide dielectric. The lower temperature process also allows reduction of the overall thermal budget for a wafer.

The present invention produces AHM with low hydrogen content (less than 30%, e.g., less than 25% or less than 20% or about 15%) for process temperatures below 500° C. (e.g., below 400° C., or 300–400° C.). Such lower process temperatures are compatible with existing semiconductor processing equipment, in particular PECVD reactors, such as Sequel™ or Vector™ reactor chambers available from Novellus Systems, Inc., San Jose, Calif. Thus, an ashable hard mask with the improved performance characteristic of increased selectivity, may be made without any hardware change.

Pulsed PECVD Deposition Process

The invention provides low temperature, low H hard mask films produced by use of a pulsed film hydrocarbon precursor plasma treatment. The pulsed delivery of the precursor reduces the amount of hydrogen incorporated in the resulting film and therefore drives down the etch rate of the hard mask thus increasing the selectivity. Other deposition process parameters, including plasma power, carrier gas flow and chamber pressure, may also be pulsed or modulated. The pulse characteristics can be varied by varying the pulse repetition frequency (frequency of turning the pulse ON and OFF) and duty cycle (fraction of time during which the precursor pulse is ON). For example, for a pulse with a frequency of 0.1 Hz and duty cycle of 40%, one pulse period is 10 seconds with precursor pulse being ON for only 4 seconds. This additional pulsing can enhance the effect in certain applications. Generally, the hydrogen content of the resulting hard mask may be modulated by pulsing of the hard mask precursor delivery alone or in combination with one or more other deposition process parameters.

FIG. 1 depicts important stages in a general process flow for a method of forming an ashable hard mask in accordance with the present invention. The method (100) involves providing a semiconductor device substrate in a deposition chamber (102) and depositing on the substrate an ashable hard mask by a plasma enhanced chemical vapor deposition (PECVD) process wherein the process (substrate) temperature is below 500° C. and the resulting hard mask has a hydrogen content of less than 30% (104).

Deposition of an ashable hard mask by a plasma enhanced chemical vapor deposition (PECVD) process wherein the process temperature is below 500° C. and the resulting hard mask has a hydrogen content of less than 30% can be accomplished by a deposition process including a pulsed delivery flow of a hard mask precursor to the deposition chamber. Referring to FIG. 2, a process flow for a method of forming an ashable hard mask according to a specific embodiment of this aspect of the invention. The method (200) again involves providing a semiconductor device substrate in a deposition chamber (202). The ashable hard mask is deposited on the substrate by a plasma enhanced chemical vapor deposition (PECVD) process wherein the process temperature of below 500° C. (e.g., no more than 400° C., or 300–400° C. or about 400° C.) wherein the precursor delivery flow is pulsed, i.e., has a duty cycle of less than 100% (e.g., 10 to 50%, 20 to 40%, such as 25 or 40%) (204). The pulsed precursor delivery flow can have a frequency of between about 0.05 and 1 Hz, or about 0.09 and 0.2 Hz, or about 0.1 and 0.15 Hz, for example about 0.1 Hz.

The precursor is a generally a hydrocarbon, for example, one defined by the formula CXHY, wherein X=2 to 10 and Y=2–24. Specific examples include methane, acetylene, ethylene, propylene, butane, cyclohexane, benzene and toluene and (CH4, C2H2, C2H4, C3H6, C4H10, C6H6, C6H12 and C7H8, respectively). Ethylene is a preferred precursor in many applications.

FIG. 3 depicts a timing sequence diagram for one specific embodiment of the invention in which an ashable hard mask is formed by a plasma enhanced chemical vapor deposition (PECVD) process having the following parameters: a process temperature of about 400° C., a 0.1 Hz pulsed delivery flow of a hard mask precursor to the deposition chamber with a duty cycle of 40%. The remaining process parameters are held static. This results in a pulse width of 10 seconds with a precursor flow on time of 4 seconds/off time of 6 seconds. Three pulse are shown in the figure. In other embodiments, the pulse frequency can be varied, for example from 0.05 to 1 Hz. During each pulse, between about 10 to 100 Å of film is grown; therefore, to grow a 2000 Å film, as would be common for a typical hard mask, 20–200 precursor pulses would be required.

Referring again to FIG. 2, in addition, other deposition process parameters, including plasma power, carrier gas flow and chamber pressure, may also optionally be pulsed or modulated. For example, the plasma pulse frequency can be synchronized with the precursor pulse frequency such that the plasma power is lower when the precursor flow is on and higher when the precursor flow is off; or vice versa such that the plasma power is higher when the precursor flow is on and lower when the precursor flow is off (204a). In addition, or in the alternative, the carrier gas flow is pulse modulated in synchrony with the precursor pulse frequency such that the carrier gas flow is lower when the precursor flow is on and higher when the precursor flow is off; or vice versa such that the carrier gas flow is higher when the precursor flow is on and lower when the precursor flow is off (204b). And in addition, or in the alternative, the chamber pressure is pulse modulated in synchrony with the precursor pulse frequency such that the chamber pressure is higher when the precursor flow is on and lower when the precursor flow is off; or vice versa such that the chamber pressure is lower when the precursor flow is on and higher when the precursor flow is off (204c).

FIG. 4 depicts a timing sequence diagram for another specific embodiment of the invention in which an ashable hard mask is formed by a plasma enhanced chemical vapor deposition (PECVD) process having the same process parameters as described above with reference to FIG. 3, and, in addition, an instance of each of the optional modulated process parameters described with reference to FIG. 2, 204a, 204b and 204c. That is, the plasma pulse frequency is synchronized with the precursor pulse frequency such that the power is lower when the precursor flow is on and higher when the precursor flow is off; the carrier gas flow is pulse modulated in synchrony with the precursor pulse frequency such that the carrier gas flow is lower when the precursor flow is on and higher when the precursor flow is off; and the chamber pressure is pulse modulated in synchrony with the precursor pulse frequency such that the chamber pressure is higher when the precursor flow is on and lower when the precursor flow is off.

Once more referring to FIG. 2, the resulting hard mask has a hydrogen content of less than 30%, e.g., less than 25% or less than 20% or about 15%) (206).

An aspect of the invention may also be expressed as a method of forming an ashable hard mask, the method involving providing a semiconductor device substrate in a deposition chamber, and depositing on the substrate an ashable hard mask by a plasma enhanced chemical vapor deposition (PECVD) process having a process temperature of less than 500° C. and a pulsed delivery flow of a hard mask precursor to the deposition chamber (for example, at a frequency of between about 0.05 and 1 Hz) with a duty cycle of less than 100%. The resulting hard mask has a hydrogen content of less than 30%. In a specific embodiment, the process has a process temperature of no more than about 400° C., a pulsed delivery flow of a hard mask precursor to the deposition chamber having a frequency of between about 0.05 and 1 Hz with a duty cycle of less than 50%, and the resulting hard mask has a hydrogen content of less than 20%.

In yet another aspect, the invention may also be expressed as a method of modulating hydrogen content in a deposited ashable hard mask. The method involves determining a base ashable hard mask hydrogen concentration resulting from deposition using plasma enhanced chemical vapor deposition (PECVD) process parameters comprising a static hard mask precursor delivery flow to the deposition chamber; providing a semiconductor device substrate in a deposition chamber; and depositing on the substrate an ashable hard mask by the plasma enhanced chemical vapor deposition (PECVD) process altered such that the precursor delivery flow is pulsed, for example, at a frequency of between about 0.05 and 1 Hz. The hydrogen content in the resulting deposited ashable hard mask is less than the base ashable hard mask hydrogen concentration. In a specific embodiment, the process has a process temperature of less than 500° C., e.g., no more than about 400° C., a pulsed delivery flow of a hard mask precursor to the deposition chamber having a frequency of between about 0.05 and 1 Hz with a duty cycle of less than 100%, e.g., less than 50%, and the resulting hard mask has a hydrogen content of less than 30%, e.g., less than 20%.

The other parameters for modulating process conditions described above also apply to these alternatively expressed aspects of the invention. In all aspects, the hydrogen content can be modulated by varying the number of pulses and the pulse frequency and duty cycle.

While the invention is not limited by any particular theory, it is believed that the H content in the hard mask film is reduced by breaking —CHx bonds in the film and subsequent formation of —C═C— by plasma treatment of few monolayers of as-deposited film, as is achieved by hard mask precursor pulsing in accordance with the present invention.

Apparatus

The present invention is preferably implemented in a plasma enhanced chemical vapor deposition (PECVD) reactor. Such a reactor may take many different forms. Generally, the apparatus will include one or more chambers or “reactors” (sometimes including multiple stations) that house one or more wafers and are suitable for wafer processing. Each chamber may house one or more wafers for processing. The one or more chambers maintain the wafer in a defined position or positions (with or without motion within that position, e.g. rotation, vibration, or other agitation). In one embodiment, a wafer undergoing hard mask deposition is transferred from one station to another within a reactor chamber during the process. For example, for a 2000 Å hard mask film deposition, 500 Å of film may be deposited at each of four stations in accordance with the present invention. Of course, the full film deposition may occur entirely at a single station or any fraction of the total film thickness may be deposited at any number of stations.

While in process, each wafer is held in place by a pedestal, wafer chuck and/or other wafer holding apparatus. For certain operations in which the wafer is to be heated, the apparatus may include a heater such as a heating plate. In a preferred embodiment of the invention, a Vector™ (e.g., C23 Vector) or Sequel™ (e.g., C2 Sequel) reactor, produced by Novellus Systems of San Jose, Calif., may be used to implement the invention.

FIG. 5 provides a simple block diagram depicting various reactor components arranged for implementing the present invention. As shown, a reactor 500 includes a process chamber 524, which encloses other components of the reactor and serves to contain the plasma generated by a capacitor type system including a showerhead 514 working in conjunction with a grounded heater block 520. A high-frequency RF generator 502, connected to a matching network 506, and a low-frequency RF generator 504 are connected to showerhead 514. The power and frequency supplied by matching network 506 is sufficient to generate a plasma from the process gas, for example 400–700 W total energy. In the implementation of the present invention only the HFRF generator is used. In a typical process, the high frequency RF component is generally between 2–60 MHz; in a preferred embodiment, the HF component is 13.56 MHz.

Within the reactor, a wafer pedestal 518 supports a substrate 516. The pedestal typically includes a chuck, a fork, or lift pins to hold and transfer the substrate during and between the deposition and/or plasma treatment reactions. The chuck may be an electrostatic chuck, a mechanical chuck or various other types of chuck as are available for use in the industry and/or research.

The process gases are introduced via inlet 512. Multiple source gas lines 510 are connected to manifold 508. The gases may be premixed or not. Appropriate valving and mass flow control mechanisms are employed to ensure that the correct gases are delivered during the deposition and plasma treatment phases of the process. In case the chemical precursor(s) is delivered in the liquid form, liquid flow control mechanisms are employed. The liquid is then vaporized and mixed with other process gases during its transportation in a manifold heated above its vaporization point before reaching the deposition chamber.

Process gases exit chamber 500 via an outlet 522. A vacuum pump 526 (e.g., a one or two stage mechanical dry pump and/or a turbomolecular pump) typically draws process gases out and maintains a suitably low pressure within the reactor by a close loop controlled flow restriction device, such as a throttle valve or a pendulum valve.

The invention may be implemented on a multi-station or single station tool. In specific embodiments, the 300 mm Novellus Vector™ tool having a 4-station deposition scheme or the 200 mm Sequel™ tool having a 6-station deposition scheme are used. It is possible to index the wafers after every deposition and/or post-deposition plasma anneal treatment until all the required depositions and treatments are completed, or multiple depositions and treatments can be conducted at a single station before indexing the wafer. It has been shown that film stress is the same in either case. However, conducting multiple depositions/treatments on one station is substantially faster than indexing following each deposition and/or treatment.

The following examples are provided to further illustrate aspects and advantages of the present invention. These examples are provided to exemplify and more clearly illustrate aspects of the present invention and are in no way intended to be limiting.

Referring to FIG. 6, the effect of varying the precursor pulse frequency is illustrated. Hydrogen content in the resulting hard mask film can be varied from about 40% for a 400° C. PECVD process having a static precursor flow (duty cycle of 100%) to about 15% H for a hard mask film deposited using a 400° C. PECVD process having a pulsed precursor flow in accordance with the present invention. Increasing the pulse frequency from 0.02 to 0.15 Hz decreased hydrogen content from about 28% to about 15%. Duty cycle was maintained at 25% for this study, and plasma power, carrier gas flow and chamber pressure were kept static. The following table lists the parameters for the process used in the experiment for this example (with pulse frequency of 0.15 Hz and duty cycle of 25%).

Precursor ON Phase Parameter Range
N2 (sccm) 1000   0 to 10000
C2H2 (sccm) 900   0 to 10000
He (sccm) 9000 1000 to 20000
HF Power (W) 600  0 to 5000
LF Power (W) 600  0 to 5000
Pressure (Torr) 5 1 to 20
Precursor ON time (sec) 1.7 0 to 60
Precursor OFF Phase Parameter Range
N2 1000   0 to 10000
C2H2 0 0
He 9000 1000 to 20000
HF Power 600  0 to 5000
LF Power 1200  0 to 5000
Pressure 4 1 to 20
Precursor OFF time (sec) 5 0 to 60

Referring to FIG. 7, the effect of varying the precursor pulse duty cycle is illustrated. Hydrogen content in the resulting hard mask film can be varied from about 40% for a 400° C. PECVD process having a static precursor flow and 100 duty cycle to about 15% for a hard mask film deposited using a 400° C. PECVD process having a pulsed precursor flow with a frequency of 0.15 Hz and a 25% duty cycle in accordance with the present invention. Plasma power, carrier gas flow and chamber pressure were kept static for this study.

Referring to FIG. 8, the effect of varying the number of precursor pulses is illustrated. For a particular pulse frequency and duty cycle, H content remains the same. Therefore, as shown in the table, films with different thicknesses but with similar H content may be manufactured by changing (increasing) the number of pulses.

Although the foregoing invention has been described in some detail for purposes of clarity of understanding, it will be apparent that certain changes and modifications may be practiced within the scope of the appended claims. It should be noted that there are many alternative ways of implementing both the process and compositions of the present invention. Accordingly, the present embodiments are to be considered as illustrative and not restrictive, and the invention is not to be limited to the details given herein.

All references cited herein are incorporated by reference for all purposes.

Subramonium, Pramod, Fang, Zhiyuan, Henri, Jon

Patent Priority Assignee Title
10023960, Sep 12 2012 ASM IP Holdings B.V. Process gas management for an inductively-coupled plasma deposition reactor
10032628, May 02 2016 ASM IP HOLDING B V Source/drain performance through conformal solid state doping
10043661, Jul 13 2015 ASM IP Holding B.V. Method for protecting layer by forming hydrocarbon-based extremely thin film
10083836, Jul 24 2015 ASM IP Holding B.V.; ASM IP HOLDING B V Formation of boron-doped titanium metal films with high work function
10087522, Apr 21 2016 ASM IP HOLDING B V Deposition of metal borides
10087525, Aug 04 2015 ASM IP Holding B.V. Variable gap hard stop design
10090316, Sep 01 2016 ASM IP Holding B.V.; ASM IP HOLDING B V 3D stacked multilayer semiconductor memory using doped select transistor channel
10103040, Mar 31 2017 ASM IP HOLDING B V Apparatus and method for manufacturing a semiconductor device
10134757, Nov 07 2016 ASM IP Holding B.V. Method of processing a substrate and a device manufactured by using the method
10177025, Jul 28 2016 ASM IP HOLDING B V Method and apparatus for filling a gap
10179947, Nov 26 2013 ASM IP Holding B.V.; ASM IP HOLDING B V Method for forming conformal nitrided, oxidized, or carbonized dielectric film by atomic layer deposition
10190213, Apr 21 2016 ASM IP HOLDING B V Deposition of metal borides
10192759, Dec 14 2012 Lam Research Corporation Image reversal with AHM gap fill for multiple patterning
10211308, Oct 21 2015 ASM IP Holding B.V. NbMC layers
10214816, Mar 25 2010 Novellus Systems, Inc. PECVD apparatus for in-situ deposition of film stacks
10229833, Nov 01 2016 ASM IP Holding B.V.; ASM IP HOLDING B V Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures
10236177, Aug 22 2017 ASM IP HOLDING B V Methods for depositing a doped germanium tin semiconductor and related semiconductor device structures
10249524, Aug 09 2017 ASM IP Holding B.V. Cassette holder assembly for a substrate cassette and holding member for use in such assembly
10249577, May 17 2016 ASM IP Holding B.V.; ASM IP HOLDING B V Method of forming metal interconnection and method of fabricating semiconductor apparatus using the method
10262859, Mar 24 2016 ASM IP Holding B.V. Process for forming a film on a substrate using multi-port injection assemblies
10269558, Dec 22 2016 ASM IP Holding B.V.; ASM IP HOLDING B V Method of forming a structure on a substrate
10276355, Mar 12 2015 ASM IP Holding B.V. Multi-zone reactor, system including the reactor, and method of using the same
10283353, Mar 29 2017 ASM IP HOLDING B V Method of reforming insulating film deposited on substrate with recess pattern
10290508, Dec 05 2017 ASM IP Holding B.V.; ASM IP HOLDING B V Method for forming vertical spacers for spacer-defined patterning
10312055, Jul 26 2017 ASM IP Holding B.V. Method of depositing film by PEALD using negative bias
10312129, Sep 29 2015 ASM IP Holding B.V. Variable adjustment for precise matching of multiple chamber cavity housings
10319588, Oct 10 2017 ASM IP HOLDING B V Method for depositing a metal chalcogenide on a substrate by cyclical deposition
10322384, Nov 09 2015 ASM IP Holding B.V.; ASM IP HOLDING B V Counter flow mixer for process chamber
10340125, Mar 08 2013 ASM IP Holding B.V. Pulsed remote plasma method and system
10340135, Nov 28 2016 ASM IP Holding B.V.; ASM IP HOLDING B V Method of topologically restricted plasma-enhanced cyclic deposition of silicon or metal nitride
10343920, Mar 18 2016 ASM IP HOLDING B V Aligned carbon nanotubes
10361201, Sep 27 2013 ASM IP Holding B.V. Semiconductor structure and device formed using selective epitaxial process
10364496, Jun 27 2011 ASM IP Holding B.V. Dual section module having shared and unshared mass flow controllers
10366864, Mar 18 2013 ASM IP Holding B.V. Method and system for in-situ formation of intermediate reactive species
10367080, May 02 2016 ASM IP HOLDING B V Method of forming a germanium oxynitride film
10378106, Nov 14 2008 ASM IP Holding B.V. Method of forming insulation film by modified PEALD
10381219, Oct 25 2018 ASM IP Holding B.V. Methods for forming a silicon nitride film
10381226, Jul 27 2016 ASM IP Holding B.V. Method of processing substrate
10388509, Jun 28 2016 ASM IP Holding B.V. Formation of epitaxial layers via dislocation filtering
10388513, Jul 03 2018 ASM IP Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
10395919, Jul 28 2016 ASM IP HOLDING B V Method and apparatus for filling a gap
10400333, Mar 04 2011 Novellus Systems, Inc. Hybrid ceramic showerhead
10403504, Oct 05 2017 ASM IP HOLDING B V Method for selectively depositing a metallic film on a substrate
10410943, Oct 13 2016 ASM IP Holding B.V. Method for passivating a surface of a semiconductor and related systems
10435790, Nov 01 2016 ASM IP Holding B.V. Method of subatmospheric plasma-enhanced ALD using capacitively coupled electrodes with narrow gap
10438965, Dec 22 2014 ASM IP Holding B.V. Semiconductor device and manufacturing method thereof
10446393, May 08 2017 ASM IP Holding B.V. Methods for forming silicon-containing epitaxial layers and related semiconductor device structures
10458018, Jun 26 2015 ASM IP Holding B.V.; ASM IP HOLDING B V Structures including metal carbide material, devices including the structures, and methods of forming same
10468251, Feb 19 2016 ASM IP Holding B.V.; ASM IP HOLDING B V Method for forming spacers using silicon nitride film for spacer-defined multiple patterning
10468261, Feb 15 2017 ASM IP HOLDING B V Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
10468262, Feb 15 2017 ASM IP Holding B.V. Methods for forming a metallic film on a substrate by a cyclical deposition and related semiconductor device structures
10480072, Apr 06 2009 ASM IP HOLDING B V Semiconductor processing reactor and components thereof
10483099, Jul 26 2018 ASM IP Holding B.V.; ASM IP HOLDING B V Method for forming thermally stable organosilicon polymer film
10494717, May 26 2015 Lam Research Corporation Anti-transient showerhead
10501866, Mar 09 2016 ASM IP Holding B.V. Gas distribution apparatus for improved film uniformity in an epitaxial system
10504742, May 31 2017 ASM IP Holding B.V.; ASM IP HOLDING B V Method of atomic layer etching using hydrogen plasma
10510536, Mar 29 2018 ASM IP Holding B.V. Method of depositing a co-doped polysilicon film on a surface of a substrate within a reaction chamber
10529542, Mar 11 2015 ASM IP Holdings B.V. Cross-flow reactor and method
10529554, Feb 19 2016 ASM IP Holding B.V. Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
10529563, Mar 29 2017 ASM IP Holdings B.V. Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures
10535516, Feb 01 2018 ASM IP Holdings B.V. Method for depositing a semiconductor structure on a surface of a substrate and related semiconductor structures
10541173, Jul 08 2016 ASM IP Holding B.V. Selective deposition method to form air gaps
10541333, Jul 19 2017 ASM IP Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
10559458, Nov 26 2018 ASM IP Holding B.V. Method of forming oxynitride film
10561975, Oct 07 2014 ASM IP Holdings B.V. Variable conductance gas distribution apparatus and method
10566223, Aug 28 2012 ASM IP Holdings B.V.; ASM IP HOLDING B V Systems and methods for dynamic semiconductor process scheduling
10590535, Jul 26 2017 ASM IP HOLDING B V Chemical treatment, deposition and/or infiltration apparatus and method for using the same
10600673, Jul 07 2015 ASM IP Holding B.V.; ASM IP HOLDING B V Magnetic susceptor to baseplate seal
10604847, Mar 18 2014 ASM IP Holding B.V. Gas distribution system, reactor including the system, and methods of using the same
10605530, Jul 26 2017 ASM IP Holding B.V. Assembly of a liner and a flange for a vertical furnace as well as the liner and the vertical furnace
10607895, Sep 18 2017 ASM IP HOLDING B V Method for forming a semiconductor device structure comprising a gate fill metal
10612136, Jun 29 2018 ASM IP HOLDING B V ; ASM IP Holding, B.V. Temperature-controlled flange and reactor system including same
10612137, Jul 08 2016 ASM IP HOLDING B V Organic reactants for atomic layer deposition
10622375, Nov 07 2016 ASM IP Holding B.V. Method of processing a substrate and a device manufactured by using the method
10636625, Sep 03 2013 Lam Research Corporation System for coordinating pressure pulses and RF modulation in a small volume confined process reactor
10643826, Oct 26 2016 ASM IP HOLDING B V Methods for thermally calibrating reaction chambers
10643904, Nov 01 2016 ASM IP HOLDING B V Methods for forming a semiconductor device and related semiconductor device structures
10644025, Nov 07 2016 ASM IP Holding B.V. Method of processing a substrate and a device manufactured by using the method
10655221, Feb 09 2017 ASM IP Holding B.V. Method for depositing oxide film by thermal ALD and PEALD
10658181, Feb 20 2018 ASM IP Holding B.V.; ASM IP HOLDING B V Method of spacer-defined direct patterning in semiconductor fabrication
10658205, Sep 28 2017 ASM IP HOLDING B V Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber
10665452, May 02 2016 ASM IP Holdings B.V. Source/drain performance through conformal solid state doping
10672636, Aug 09 2017 ASM IP Holding B.V. Cassette holder assembly for a substrate cassette and holding member for use in such assembly
10683571, Feb 25 2014 ASM IP Holding B.V. Gas supply manifold and method of supplying gases to chamber using same
10685834, Jul 05 2017 ASM IP Holdings B.V. Methods for forming a silicon germanium tin layer and related semiconductor device structures
10692741, Aug 08 2017 ASM IP Holdings B.V.; ASM IP HOLDING B V Radiation shield
10707106, Jun 06 2011 ASM IP Holding B.V.; ASM IP HOLDING B V High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules
10714315, Oct 12 2012 ASM IP Holdings B.V.; ASM IP HOLDING B V Semiconductor reaction chamber showerhead
10714335, Apr 25 2017 ASM IP Holding B.V.; ASM IP HOLDING B V Method of depositing thin film and method of manufacturing semiconductor device
10714350, Nov 01 2016 ASM IP Holdings, B.V.; ASM IP HOLDING B V Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
10714385, Jul 19 2016 ASM IP Holding B.V. Selective deposition of tungsten
10720322, Feb 19 2016 ASM IP Holding B.V. Method for forming silicon nitride film selectively on top surface
10720331, Nov 01 2016 ASM IP Holdings, B.V. Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures
10731249, Feb 15 2018 ASM IP HOLDING B V Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus
10734223, Oct 10 2017 ASM IP Holding B.V. Method for depositing a metal chalcogenide on a substrate by cyclical deposition
10734244, Nov 16 2017 ASM IP Holding B.V. Method of processing a substrate and a device manufactured by the same
10734497, Jul 18 2017 ASM IP HOLDING B V Methods for forming a semiconductor device structure and related semiconductor device structures
10741385, Jul 28 2016 ASM IP HOLDING B V Method and apparatus for filling a gap
10755922, Jul 03 2018 ASM IP HOLDING B V Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
10755923, Jul 03 2018 ASM IP Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
10767789, Jul 16 2018 ASM IP Holding B.V. Diaphragm valves, valve components, and methods for forming valve components
10770286, May 08 2017 ASM IP Holdings B.V.; ASM IP HOLDING B V Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
10770336, Aug 08 2017 ASM IP Holding B.V.; ASM IP HOLDING B V Substrate lift mechanism and reactor including same
10784102, Dec 22 2016 ASM IP Holding B.V. Method of forming a structure on a substrate
10787741, Aug 21 2014 ASM IP Holding B.V. Method and system for in situ formation of gas-phase compounds
10797133, Jun 21 2018 ASM IP Holding B.V.; ASM IP HOLDING B V Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
10804098, Aug 14 2009 ASM IP HOLDING B V Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species
10811256, Oct 16 2018 ASM IP Holding B.V. Method for etching a carbon-containing feature
10818758, Nov 16 2018 ASM IP Holding B.V. Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
10829852, Aug 16 2018 ASM IP Holding B.V. Gas distribution device for a wafer processing apparatus
10832903, Oct 28 2011 ASM IP Holding B.V. Process feed management for semiconductor substrate processing
10844484, Sep 22 2017 ASM IP Holding B.V.; ASM IP HOLDING B V Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
10844486, Apr 06 2009 ASM IP HOLDING B V Semiconductor processing reactor and components thereof
10847365, Oct 11 2018 ASM IP Holding B.V.; ASM IP HOLDING B V Method of forming conformal silicon carbide film by cyclic CVD
10847366, Nov 16 2018 ASM IP Holding B.V. Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process
10847371, Mar 27 2018 ASM IP Holding B.V. Method of forming an electrode on a substrate and a semiconductor device structure including an electrode
10851456, Apr 21 2016 ASM IP Holding B.V. Deposition of metal borides
10854498, Jul 15 2011 ASM IP Holding B.V.; ASM JAPAN K K Wafer-supporting device and method for producing same
10858737, Jul 28 2014 ASM IP Holding B.V.; ASM IP HOLDING B V Showerhead assembly and components thereof
10865475, Apr 21 2016 ASM IP HOLDING B V Deposition of metal borides and silicides
10867786, Mar 30 2018 ASM IP Holding B.V. Substrate processing method
10867788, Dec 28 2016 ASM IP Holding B.V.; ASM IP HOLDING B V Method of forming a structure on a substrate
10872771, Jan 16 2018 ASM IP Holding B. V. Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
10883175, Aug 09 2018 ASM IP HOLDING B V Vertical furnace for processing substrates and a liner for use therein
10886123, Jun 02 2017 ASM IP Holding B.V. Methods for forming low temperature semiconductor layers and related semiconductor device structures
10892156, May 08 2017 ASM IP Holding B.V.; ASM IP HOLDING B V Methods for forming a silicon nitride film on a substrate and related semiconductor device structures
10896820, Feb 14 2018 ASM IP HOLDING B V Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
10910262, Nov 16 2017 ASM IP HOLDING B V Method of selectively depositing a capping layer structure on a semiconductor device structure
10914004, Jun 29 2018 ASM IP Holding B.V. Thin-film deposition method and manufacturing method of semiconductor device
10923344, Oct 30 2017 ASM IP HOLDING B V Methods for forming a semiconductor structure and related semiconductor structures
10928731, Sep 21 2017 ASM IP Holding B.V. Method of sequential infiltration synthesis treatment of infiltrateable material and structures and devices formed using same
10934619, Nov 15 2016 ASM IP Holding B.V.; ASM IP HOLDING B V Gas supply unit and substrate processing apparatus including the gas supply unit
10941490, Oct 07 2014 ASM IP Holding B.V. Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same
10943771, Oct 26 2016 ASM IP Holding B.V. Methods for thermally calibrating reaction chambers
10950432, Apr 25 2017 ASM IP Holding B.V. Method of depositing thin film and method of manufacturing semiconductor device
10975470, Feb 23 2018 ASM IP Holding B.V. Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment
11001925, Dec 19 2016 ASM IP Holding B.V. Substrate processing apparatus
11004977, Jul 19 2017 ASM IP Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
11015245, Mar 19 2014 ASM IP Holding B.V. Gas-phase reactor and system having exhaust plenum and components thereof
11018002, Jul 19 2017 ASM IP Holding B.V. Method for selectively depositing a Group IV semiconductor and related semiconductor device structures
11018047, Jan 25 2018 ASM IP Holding B.V. Hybrid lift pin
11022879, Nov 24 2017 ASM IP Holding B.V. Method of forming an enhanced unexposed photoresist layer
11024523, Sep 11 2018 ASM IP Holding B.V.; ASM IP HOLDING B V Substrate processing apparatus and method
11031242, Nov 07 2018 ASM IP Holding B.V. Methods for depositing a boron doped silicon germanium film
11049751, Sep 14 2018 ASM IP Holding B.V.; ASM IP HOLDING B V Cassette supply system to store and handle cassettes and processing apparatus equipped therewith
11053591, Aug 06 2018 ASM IP Holding B.V. Multi-port gas injection system and reactor system including same
11056344, Aug 30 2017 ASM IP HOLDING B V Layer forming method
11056567, May 11 2018 ASM IP Holding B.V. Method of forming a doped metal carbide film on a substrate and related semiconductor device structures
11069510, Aug 30 2017 ASM IP Holding B.V. Substrate processing apparatus
11081345, Feb 06 2018 ASM IP Holding B.V.; ASM IP HOLDING B V Method of post-deposition treatment for silicon oxide film
11087997, Oct 31 2018 ASM IP Holding B.V.; ASM IP HOLDING B V Substrate processing apparatus for processing substrates
11088002, Mar 29 2018 ASM IP HOLDING B V Substrate rack and a substrate processing system and method
11094546, Oct 05 2017 ASM IP Holding B.V. Method for selectively depositing a metallic film on a substrate
11094582, Jul 08 2016 ASM IP Holding B.V. Selective deposition method to form air gaps
11101370, May 02 2016 ASM IP Holding B.V. Method of forming a germanium oxynitride film
11107676, Jul 28 2016 ASM IP Holding B.V. Method and apparatus for filling a gap
11114283, Mar 16 2018 ASM IP Holding B.V. Reactor, system including the reactor, and methods of manufacturing and using same
11114294, Mar 08 2019 ASM IP Holding B.V. Structure including SiOC layer and method of forming same
11127589, Feb 01 2019 ASM IP Holding B.V. Method of topology-selective film formation of silicon oxide
11127617, Nov 27 2017 ASM IP HOLDING B V Storage device for storing wafer cassettes for use with a batch furnace
11139191, Aug 09 2017 ASM IP HOLDING B V Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
11139308, Dec 29 2015 ASM IP Holding B.V.; ASM IP HOLDING B V Atomic layer deposition of III-V compounds to form V-NAND devices
11158513, Dec 13 2018 ASM IP Holding B.V.; ASM IP HOLDING B V Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
11164955, Jul 18 2017 ASM IP Holding B.V. Methods for forming a semiconductor device structure and related semiconductor device structures
11168395, Jun 29 2018 ASM IP Holding B.V. Temperature-controlled flange and reactor system including same
11171025, Jan 22 2019 ASM IP Holding B.V. Substrate processing device
11205585, Jul 28 2016 ASM IP Holding B.V.; ASM IP HOLDING B V Substrate processing apparatus and method of operating the same
11217444, Nov 30 2018 ASM IP HOLDING B V Method for forming an ultraviolet radiation responsive metal oxide-containing film
11222772, Dec 14 2016 ASM IP Holding B.V. Substrate processing apparatus
11227782, Jul 31 2019 ASM IP Holding B.V. Vertical batch furnace assembly
11227789, Feb 20 2019 ASM IP Holding B.V. Method and apparatus for filling a recess formed within a substrate surface
11230766, Mar 29 2018 ASM IP HOLDING B V Substrate processing apparatus and method
11232963, Oct 03 2018 ASM IP Holding B.V. Substrate processing apparatus and method
11233133, Oct 21 2015 ASM IP Holding B.V. NbMC layers
11242598, Jun 26 2015 ASM IP Holding B.V. Structures including metal carbide material, devices including the structures, and methods of forming same
11244825, Nov 16 2018 ASM IP Holding B.V. Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process
11251035, Dec 22 2016 ASM IP Holding B.V. Method of forming a structure on a substrate
11251040, Feb 20 2019 ASM IP Holding B.V. Cyclical deposition method including treatment step and apparatus for same
11251068, Oct 19 2018 ASM IP Holding B.V. Substrate processing apparatus and substrate processing method
11270899, Jun 04 2018 ASM IP Holding B.V. Wafer handling chamber with moisture reduction
11274369, Sep 11 2018 ASM IP Holding B.V. Thin film deposition method
11282698, Jul 19 2019 ASM IP Holding B.V. Method of forming topology-controlled amorphous carbon polymer film
11286558, Aug 23 2019 ASM IP Holding B.V. Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
11286562, Jun 08 2018 ASM IP Holding B.V. Gas-phase chemical reactor and method of using same
11289326, May 07 2019 ASM IP Holding B.V. Method for reforming amorphous carbon polymer film
11295980, Aug 30 2017 ASM IP HOLDING B V Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
11296189, Jun 21 2018 ASM IP Holding B.V. Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
11306395, Jun 28 2017 ASM IP HOLDING B V Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
11315794, Oct 21 2019 ASM IP Holding B.V. Apparatus and methods for selectively etching films
11339476, Oct 08 2019 ASM IP Holding B.V. Substrate processing device having connection plates, substrate processing method
11342216, Feb 20 2019 ASM IP Holding B.V. Cyclical deposition method and apparatus for filling a recess formed within a substrate surface
11345999, Jun 06 2019 ASM IP Holding B.V. Method of using a gas-phase reactor system including analyzing exhausted gas
11355338, May 10 2019 ASM IP Holding B.V. Method of depositing material onto a surface and structure formed according to the method
11361990, May 28 2018 ASM IP Holding B.V. Substrate processing method and device manufactured by using the same
11374112, Jul 19 2017 ASM IP Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
11378337, Mar 28 2019 ASM IP Holding B.V. Door opener and substrate processing apparatus provided therewith
11387106, Feb 14 2018 ASM IP Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
11387120, Sep 28 2017 ASM IP Holding B.V. Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber
11390945, Jul 03 2019 ASM IP Holding B.V. Temperature control assembly for substrate processing apparatus and method of using same
11390946, Jan 17 2019 ASM IP Holding B.V. Methods of forming a transition metal containing film on a substrate by a cyclical deposition process
11390950, Jan 10 2017 ASM IP HOLDING B V Reactor system and method to reduce residue buildup during a film deposition process
11393690, Jan 19 2018 ASM IP HOLDING B V Deposition method
11396702, Nov 15 2016 ASM IP Holding B.V. Gas supply unit and substrate processing apparatus including the gas supply unit
11398382, Mar 27 2018 ASM IP Holding B.V. Method of forming an electrode on a substrate and a semiconductor device structure including an electrode
11401605, Nov 26 2019 ASM IP Holding B.V. Substrate processing apparatus
11410851, Feb 15 2017 ASM IP Holding B.V. Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
11411088, Nov 16 2018 ASM IP Holding B.V. Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
11414760, Oct 08 2018 ASM IP Holding B.V. Substrate support unit, thin film deposition apparatus including the same, and substrate processing apparatus including the same
11417545, Aug 08 2017 ASM IP Holding B.V. Radiation shield
11424119, Mar 08 2019 ASM IP HOLDING B V Method for selective deposition of silicon nitride layer and structure including selectively-deposited silicon nitride layer
11430640, Jul 30 2019 ASM IP Holding B.V. Substrate processing apparatus
11430674, Aug 22 2018 ASM IP Holding B.V.; ASM IP HOLDING B V Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
11437241, Apr 08 2020 ASM IP Holding B.V. Apparatus and methods for selectively etching silicon oxide films
11443926, Jul 30 2019 ASM IP Holding B.V. Substrate processing apparatus
11447861, Dec 15 2016 ASM IP HOLDING B V Sequential infiltration synthesis apparatus and a method of forming a patterned structure
11447864, Apr 19 2019 ASM IP Holding B.V. Layer forming method and apparatus
11453943, May 25 2016 ASM IP Holding B.V.; ASM IP HOLDING B V Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor
11453946, Jun 06 2019 ASM IP Holding B.V. Gas-phase reactor system including a gas detector
11469098, May 08 2018 ASM IP Holding B.V. Methods for depositing an oxide film on a substrate by a cyclical deposition process and related device structures
11473195, Mar 01 2018 ASM IP Holding B.V. Semiconductor processing apparatus and a method for processing a substrate
11476109, Jun 11 2019 ASM IP Holding B.V. Method of forming an electronic structure using reforming gas, system for performing the method, and structure formed using the method
11482412, Jan 19 2018 ASM IP HOLDING B V Method for depositing a gap-fill layer by plasma-assisted deposition
11482418, Feb 20 2018 ASM IP Holding B.V. Substrate processing method and apparatus
11482533, Feb 20 2019 ASM IP Holding B.V. Apparatus and methods for plug fill deposition in 3-D NAND applications
11488819, Dec 04 2018 ASM IP Holding B.V. Method of cleaning substrate processing apparatus
11488854, Mar 11 2020 ASM IP Holding B.V. Substrate handling device with adjustable joints
11492703, Jun 27 2018 ASM IP HOLDING B V Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
11495459, Sep 04 2019 ASM IP Holding B.V. Methods for selective deposition using a sacrificial capping layer
11499222, Jun 27 2018 ASM IP HOLDING B V Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
11499226, Nov 02 2018 ASM IP Holding B.V. Substrate supporting unit and a substrate processing device including the same
11501956, Oct 12 2012 ASM IP Holding B.V. Semiconductor reaction chamber showerhead
11501968, Nov 15 2019 ASM IP Holding B.V.; ASM IP HOLDING B V Method for providing a semiconductor device with silicon filled gaps
11501973, Jan 16 2018 ASM IP Holding B.V. Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
11515187, May 01 2020 ASM IP Holding B.V.; ASM IP HOLDING B V Fast FOUP swapping with a FOUP handler
11515188, May 16 2019 ASM IP Holding B.V. Wafer boat handling device, vertical batch furnace and method
11521851, Feb 03 2020 ASM IP HOLDING B V Method of forming structures including a vanadium or indium layer
11527400, Aug 23 2019 ASM IP Holding B.V. Method for depositing silicon oxide film having improved quality by peald using bis(diethylamino)silane
11527403, Dec 19 2019 ASM IP Holding B.V. Methods for filling a gap feature on a substrate surface and related semiconductor structures
11530483, Jun 21 2018 ASM IP Holding B.V. Substrate processing system
11530876, Apr 24 2020 ASM IP Holding B.V. Vertical batch furnace assembly comprising a cooling gas supply
11532757, Oct 27 2016 ASM IP Holding B.V. Deposition of charge trapping layers
11551912, Jan 20 2020 ASM IP Holding B.V. Method of forming thin film and method of modifying surface of thin film
11551925, Apr 01 2019 ASM IP Holding B.V. Method for manufacturing a semiconductor device
11557474, Jul 29 2019 ASM IP Holding B.V. Methods for selective deposition utilizing n-type dopants and/or alternative dopants to achieve high dopant incorporation
11562901, Sep 25 2019 ASM IP Holding B.V. Substrate processing method
11572620, Nov 06 2018 ASM IP Holding B.V. Methods for selectively depositing an amorphous silicon film on a substrate
11581186, Dec 15 2016 ASM IP HOLDING B V Sequential infiltration synthesis apparatus
11581220, Aug 30 2017 ASM IP Holding B.V. Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
11587814, Jul 31 2019 ASM IP Holding B.V. Vertical batch furnace assembly
11587815, Jul 31 2019 ASM IP Holding B.V. Vertical batch furnace assembly
11587821, Aug 08 2017 ASM IP Holding B.V. Substrate lift mechanism and reactor including same
11594450, Aug 22 2019 ASM IP HOLDING B V Method for forming a structure with a hole
11594600, Nov 05 2019 ASM IP Holding B.V. Structures with doped semiconductor layers and methods and systems for forming same
11605528, Jul 09 2019 ASM IP Holding B.V. Plasma device using coaxial waveguide, and substrate treatment method
11610774, Oct 02 2019 ASM IP Holding B.V. Methods for forming a topographically selective silicon oxide film by a cyclical plasma-enhanced deposition process
11610775, Jul 28 2016 ASM IP HOLDING B V Method and apparatus for filling a gap
11615970, Jul 17 2019 ASM IP HOLDING B V Radical assist ignition plasma system and method
11615980, Feb 20 2019 ASM IP Holding B.V. Method and apparatus for filling a recess formed within a substrate surface
11626308, May 13 2020 ASM IP Holding B.V. Laser alignment fixture for a reactor system
11626316, Nov 20 2019 ASM IP Holding B.V. Method of depositing carbon-containing material on a surface of a substrate, structure formed using the method, and system for forming the structure
11629406, Mar 09 2018 ASM IP Holding B.V.; ASM IP HOLDING B V Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate
11629407, Feb 22 2019 ASM IP Holding B.V. Substrate processing apparatus and method for processing substrates
11637011, Oct 16 2019 ASM IP Holding B.V. Method of topology-selective film formation of silicon oxide
11637014, Oct 17 2019 ASM IP Holding B.V. Methods for selective deposition of doped semiconductor material
11639548, Aug 21 2019 ASM IP Holding B.V. Film-forming material mixed-gas forming device and film forming device
11639811, Nov 27 2017 ASM IP HOLDING B V Apparatus including a clean mini environment
11643724, Jul 18 2019 ASM IP Holding B.V. Method of forming structures using a neutral beam
11644758, Jul 17 2020 ASM IP Holding B.V. Structures and methods for use in photolithography
11646184, Nov 29 2019 ASM IP Holding B.V. Substrate processing apparatus
11646197, Jul 03 2018 ASM IP Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
11646204, Jun 24 2020 ASM IP Holding B.V.; ASM IP HOLDING B V Method for forming a layer provided with silicon
11646205, Oct 29 2019 ASM IP Holding B.V. Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same
11649546, Jul 08 2016 ASM IP Holding B.V. Organic reactants for atomic layer deposition
11658029, Dec 14 2018 ASM IP HOLDING B V Method of forming a device structure using selective deposition of gallium nitride and system for same
11658030, Mar 29 2017 ASM IP Holding B.V. Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures
11658035, Jun 30 2020 ASM IP HOLDING B V Substrate processing method
11664199, Oct 19 2018 ASM IP Holding B.V. Substrate processing apparatus and substrate processing method
11664245, Jul 16 2019 ASM IP Holding B.V. Substrate processing device
11664267, Jul 10 2019 ASM IP Holding B.V. Substrate support assembly and substrate processing device including the same
11674220, Jul 20 2020 ASM IP Holding B.V. Method for depositing molybdenum layers using an underlayer
11676812, Feb 19 2016 ASM IP Holding B.V. Method for forming silicon nitride film selectively on top/bottom portions
11680839, Aug 05 2019 ASM IP Holding B.V. Liquid level sensor for a chemical source vessel
11682572, Nov 27 2017 ASM IP Holdings B.V. Storage device for storing wafer cassettes for use with a batch furnace
11685991, Feb 14 2018 ASM IP HOLDING B V ; Universiteit Gent Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
11688603, Jul 17 2019 ASM IP Holding B.V. Methods of forming silicon germanium structures
11694892, Jul 28 2016 ASM IP Holding B.V. Method and apparatus for filling a gap
11695054, Jul 18 2017 ASM IP Holding B.V. Methods for forming a semiconductor device structure and related semiconductor device structures
11705333, May 21 2020 ASM IP Holding B.V. Structures including multiple carbon layers and methods of forming and using same
11718913, Jun 04 2018 ASM IP Holding B.V.; ASM IP HOLDING B V Gas distribution system and reactor system including same
11725277, Jul 20 2011 ASM IP HOLDING B V Pressure transmitter for a semiconductor processing environment
11725280, Aug 26 2020 ASM IP Holding B.V. Method for forming metal silicon oxide and metal silicon oxynitride layers
11735414, Feb 06 2018 ASM IP Holding B.V. Method of post-deposition treatment for silicon oxide film
11735422, Oct 10 2019 ASM IP HOLDING B V Method of forming a photoresist underlayer and structure including same
11735445, Oct 31 2018 ASM IP Holding B.V. Substrate processing apparatus for processing substrates
11742189, Mar 12 2015 ASM IP Holding B.V. Multi-zone reactor, system including the reactor, and method of using the same
11742198, Mar 08 2019 ASM IP Holding B.V. Structure including SiOCN layer and method of forming same
11746414, Jul 03 2019 ASM IP Holding B.V. Temperature control assembly for substrate processing apparatus and method of using same
11746420, Mar 25 2010 Novellus Systems, Inc. PECVD apparatus for in-situ deposition of film stacks
11749562, Jul 08 2016 ASM IP Holding B.V. Selective deposition method to form air gaps
11767589, May 29 2020 ASM IP Holding B.V. Substrate processing device
11769670, Dec 13 2018 ASM IP Holding B.V. Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
11769682, Aug 09 2017 ASM IP Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
11776846, Feb 07 2020 ASM IP Holding B.V. Methods for depositing gap filling fluids and related systems and devices
11781221, May 07 2019 ASM IP Holding B.V. Chemical source vessel with dip tube
11781243, Feb 17 2020 ASM IP Holding B.V. Method for depositing low temperature phosphorous-doped silicon
11791172, Jun 18 2020 Applied Materials, Inc Methods of controlling gas pressure in gas-pulsing-based precursor distribution systems
11795545, Oct 07 2014 ASM IP Holding B.V. Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same
11798830, May 01 2020 ASM IP Holding B.V. Fast FOUP swapping with a FOUP handler
11798834, Feb 20 2019 ASM IP Holding B.V. Cyclical deposition method and apparatus for filling a recess formed within a substrate surface
11798999, Nov 16 2018 ASM IP Holding B.V. Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
11802338, Jul 26 2017 ASM IP Holding B.V. Chemical treatment, deposition and/or infiltration apparatus and method for using the same
11804364, May 19 2020 ASM IP Holding B.V. Substrate processing apparatus
11804388, Sep 11 2018 ASM IP Holding B.V. Substrate processing apparatus and method
11810788, Nov 01 2016 ASM IP Holding B.V. Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
11814715, Jun 27 2018 ASM IP Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
11814747, Apr 24 2019 ASM IP Holding B.V. Gas-phase reactor system-with a reaction chamber, a solid precursor source vessel, a gas distribution system, and a flange assembly
11821078, Apr 15 2020 ASM IP HOLDING B V Method for forming precoat film and method for forming silicon-containing film
11823866, Apr 02 2020 ASM IP Holding B.V. Thin film forming method
11823876, Sep 05 2019 ASM IP Holding B.V.; ASM IP HOLDING B V Substrate processing apparatus
11827978, Aug 23 2019 ASM IP Holding B.V. Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
11827981, Oct 14 2020 ASM IP HOLDING B V Method of depositing material on stepped structure
11828707, Feb 04 2020 ASM IP Holding B.V. Method and apparatus for transmittance measurements of large articles
11830730, Aug 29 2017 ASM IP HOLDING B V Layer forming method and apparatus
11830738, Apr 03 2020 ASM IP Holding B.V. Method for forming barrier layer and method for manufacturing semiconductor device
11837441, May 29 2019 Lam Research Corporation Depositing a carbon hardmask by high power pulsed low frequency RF
11837483, Jun 04 2018 ASM IP Holding B.V. Wafer handling chamber with moisture reduction
11837494, Mar 11 2020 ASM IP Holding B.V. Substrate handling device with adjustable joints
11840761, Dec 04 2019 ASM IP Holding B.V. Substrate processing apparatus
11848200, May 08 2017 ASM IP Holding B.V. Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
11851755, Dec 15 2016 ASM IP Holding B.V. Sequential infiltration synthesis apparatus and a method of forming a patterned structure
11866823, Nov 02 2018 ASM IP Holding B.V. Substrate supporting unit and a substrate processing device including the same
11873557, Oct 22 2020 ASM IP HOLDING B V Method of depositing vanadium metal
11876008, Jul 31 2019 ASM IP Holding B.V. Vertical batch furnace assembly
11876356, Mar 11 2020 ASM IP Holding B.V. Lockout tagout assembly and system and method of using same
11885013, Dec 17 2019 ASM IP Holding B.V. Method of forming vanadium nitride layer and structure including the vanadium nitride layer
11885020, Dec 22 2020 ASM IP Holding B.V. Transition metal deposition method
11885023, Oct 01 2018 ASM IP Holding B.V. Substrate retaining apparatus, system including the apparatus, and method of using same
11887857, Apr 24 2020 ASM IP Holding B.V. Methods and systems for depositing a layer comprising vanadium, nitrogen, and a further element
11891696, Nov 30 2020 ASM IP Holding B.V. Injector configured for arrangement within a reaction chamber of a substrate processing apparatus
11898242, Aug 23 2019 ASM IP Holding B.V. Methods for forming a polycrystalline molybdenum film over a surface of a substrate and related structures including a polycrystalline molybdenum film
11898243, Apr 24 2020 ASM IP Holding B.V. Method of forming vanadium nitride-containing layer
11898244, Jul 11 2016 Samsung Electronics Co., Ltd. Plasma-enhanced chemical vapor deposition method of forming lithium-based film by using the same
11901175, Mar 08 2019 ASM IP Holding B.V. Method for selective deposition of silicon nitride layer and structure including selectively-deposited silicon nitride layer
11901179, Oct 28 2020 ASM IP HOLDING B V Method and device for depositing silicon onto substrates
11908684, Jun 11 2019 ASM IP Holding B.V. Method of forming an electronic structure using reforming gas, system for performing the method, and structure formed using the method
11908733, May 28 2018 ASM IP Holding B.V. Substrate processing method and device manufactured by using the same
11915929, Nov 26 2019 ASM IP Holding B.V. Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface
7745346, Oct 17 2008 NOVELLUS SYTEMS, INC ; Novellus Systems, Inc Method for improving process control and film conformality of PECVD film
7820556, Jun 04 2008 Novellus Systems, Inc Method for purifying acetylene gas for use in semiconductor processes
7955990, Dec 12 2008 Novellus Systems, Inc. Method for improved thickness repeatability of PECVD deposited carbon films
7981777, Feb 22 2007 Novellus Systems, Inc. Methods of depositing stable and hermetic ashable hardmask films
7981810, Jun 08 2006 Novellus Systems, Inc. Methods of depositing highly selective transparent ashable hardmask films
8110493, Dec 23 2005 Novellus Systems, Inc Pulsed PECVD method for modulating hydrogen content in hard mask
8309473, Jun 04 2008 Novellus Systems, Inc. Method for purifying acetylene gas for use in semiconductor processes
8435608, Jun 27 2008 Novellus Systems, Inc. Methods of depositing smooth and conformal ashable hard mask films
8563414, Apr 23 2010 Novellus Systems, Inc. Methods for forming conductive carbon films by PECVD
8591659, Jan 16 2009 Novellus Systems, Inc. Plasma clean method for deposition chamber
8664124, Oct 31 2005 Novellus Systems, Inc Method for etching organic hardmasks
8669181, Feb 22 2007 Novellus Systems, Inc. Diffusion barrier and etch stop films
8669185, Jul 30 2010 ASM Japan K.K. Method of tailoring conformality of Si-containing film
8962101, Aug 31 2007 Novellus Systems, Inc Methods and apparatus for plasma-based deposition
9023731, May 18 2012 Novellus Systems, Inc Carbon deposition-etch-ash gap fill process
9240320, Jun 27 2008 Novellus Systems, Inc Methods of depositing smooth and conformal ashable hard mask films
9304396, Feb 25 2013 Lam Research Corporation PECVD films for EUV lithography
9320387, Sep 30 2013 Lam Research Corporation Sulfur doped carbon hard masks
9362133, Dec 14 2012 Lam Research Corporation Method for forming a mask by etching conformal film on patterned ashable hardmask
9441296, Mar 04 2011 Novellus Systems, Inc.; Novellus Systems, Inc Hybrid ceramic showerhead
9447498, Mar 18 2014 ASM IP Holding B.V.; ASM IP HOLDING B V Method for performing uniform processing in gas system-sharing multiple reaction chambers
9455138, Nov 10 2015 ASM IP HOLDING B V Method for forming dielectric film in trenches by PEALD using H-containing gas
9478415, Feb 13 2015 ASM IP Holding B.V. Method for forming film having low resistance and shallow junction depth
9543180, Aug 01 2014 ASM IP Holding B.V. Apparatus and method for transporting wafers between wafer carrier and process tool under vacuum
9548188, Jul 30 2014 Lam Research Corporation Method of conditioning vacuum chamber of semiconductor substrate processing apparatus
9556516, Oct 09 2013 ASM IP Holding B.V; ASM IP HOLDING B V Method for forming Ti-containing film by PEALD using TDMAT or TDEAT
9589799, Sep 30 2013 Lam Research Corporation High selectivity and low stress carbon hardmask by pulsed low frequency RF power
9607837, Dec 21 2015 ASM IP Holding B.V.; ASM IP HOLDING B V Method for forming silicon oxide cap layer for solid state diffusion process
9618846, Feb 25 2013 Lam Research Corporation PECVD films for EUV lithography
9627221, Dec 28 2015 ASM IP Holding B.V. Continuous process incorporating atomic layer etching
9640416, Dec 26 2012 ASM IP Holding B.V. Single-and dual-chamber module-attachable wafer-handling chamber
9647114, Aug 14 2015 ASM IP Holding B.V. Methods of forming highly p-type doped germanium tin films and structures and devices including the films
9711345, Aug 25 2015 ASM IP HOLDING B V Method for forming aluminum nitride-based film by PEALD
9735024, Dec 28 2015 ASM IP Holding B.V. Method of atomic layer etching using functional group-containing fluorocarbon
9754779, Feb 19 2016 ASM IP Holding B.V.; ASM IP HOLDING B V Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
9793115, Aug 14 2013 ASM IP Holding B.V. Structures and devices including germanium-tin films and methods of forming same
9793135, Jul 14 2016 ASM IP HOLDING B V Method of cyclic dry etching using etchant film
9793148, Jun 22 2011 ASM Japan K.K. Method for positioning wafers in multiple wafer transport
9812320, Jul 28 2016 ASM IP HOLDING B V Method and apparatus for filling a gap
9859151, Jul 08 2016 ASM IP HOLDING B V Selective film deposition method to form air gaps
9887082, Jul 28 2016 ASM IP HOLDING B V Method and apparatus for filling a gap
9891521, Nov 19 2014 ASM IP Holding B.V.; ASM IP HOLDING B V Method for depositing thin film
9899291, Jul 13 2015 ASM IP Holding B.V.; ASM IP HOLDING B V Method for protecting layer by forming hydrocarbon-based extremely thin film
9899405, Dec 22 2014 ASM IP Holding B.V.; ASM IP HOLDING B V Semiconductor device and manufacturing method thereof
9905420, Dec 01 2015 ASM IP HOLDING B V Methods of forming silicon germanium tin films and structures and devices including the films
9909214, Oct 15 2015 ASM IP Holding B.V.; ASM IP HOLDING B V Method for depositing dielectric film in trenches by PEALD
9916980, Dec 15 2016 ASM IP HOLDING B V Method of forming a structure on a substrate
9960072, Sep 29 2015 ASM IP Holding B.V. Variable adjustment for precise matching of multiple chamber cavity housings
D830981, Apr 07 2017 ASM IP HOLDING B V ; ASM IP Holding B.V. Susceptor for semiconductor substrate processing apparatus
D880437, Feb 01 2018 ASM IP Holding B.V. Gas supply plate for semiconductor manufacturing apparatus
D900036, Aug 24 2017 ASM IP Holding B.V.; ASM IP HOLDING B V Heater electrical connector and adapter
D903477, Jan 24 2018 ASM IP HOLDING B V Metal clamp
D913980, Feb 01 2018 ASM IP Holding B.V. Gas supply plate for semiconductor manufacturing apparatus
D922229, Jun 05 2019 ASM IP Holding B.V. Device for controlling a temperature of a gas supply unit
D930782, Aug 22 2019 ASM IP Holding B.V. Gas distributor
D931978, Jun 27 2019 ASM IP Holding B.V. Showerhead vacuum transport
D935572, May 24 2019 ASM IP Holding B.V.; ASM IP HOLDING B V Gas channel plate
D940837, Aug 22 2019 ASM IP Holding B.V. Electrode
D944946, Jun 14 2019 ASM IP Holding B.V. Shower plate
D947913, May 17 2019 ASM IP Holding B.V.; ASM IP HOLDING B V Susceptor shaft
D948463, Oct 24 2018 ASM IP Holding B.V. Susceptor for semiconductor substrate supporting apparatus
D949319, Aug 22 2019 ASM IP Holding B.V. Exhaust duct
D965044, Aug 19 2019 ASM IP Holding B.V.; ASM IP HOLDING B V Susceptor shaft
D965524, Aug 19 2019 ASM IP Holding B.V. Susceptor support
D975665, May 17 2019 ASM IP Holding B.V. Susceptor shaft
D979506, Aug 22 2019 ASM IP Holding B.V. Insulator
D980813, May 11 2021 ASM IP HOLDING B V Gas flow control plate for substrate processing apparatus
D980814, May 11 2021 ASM IP HOLDING B V Gas distributor for substrate processing apparatus
D981973, May 11 2021 ASM IP HOLDING B V Reactor wall for substrate processing apparatus
ER3967,
ER4489,
ER6015,
ER6328,
ER8750,
Patent Priority Assignee Title
4357451, May 21 1980 Phillips Petroleum Company Chemical dehydroxylation of silica
4882008, Jul 08 1988 TEXAS INSTRUMENTS INCORPORATED, A CORP OF DE Dry development of photoresist
4885262, Mar 08 1989 Intel Corporation Chemical modification of spin-on glass for improved performance in IC fabrication
4968384, Sep 29 1988 Fuji Electric Corporate Research and Development Ltd. Method of producing carbon-doped amorphous silicon thin film
5231057, Aug 20 1990 Fujitsu Semiconductor Limited Method of depositing insulating layer on underlying layer using plasma-assisted CVD process using pulse-modulated plasma
5281546, Sep 02 1992 General Electric Company Method of fabricating a thin film transistor using hydrogen plasma treatment of the intrinsic silicon/doped layer interface
5504042, Jun 23 1994 Texas Instruments Incorporated Porous dielectric material with improved pore surface properties for electronics applications
5648175, Feb 14 1996 Applied Materials, Inc. Chemical vapor deposition reactor system and integrated circuit
5686054, Jun 01 1994 Wacker-Chemie GmbH Process for the silylation of inorganic oxides
5700844, Apr 09 1996 International Business Machines Corporation Process for making a foamed polymer
5789027, Nov 12 1996 University of Massachusetts Method of chemically depositing material onto a substrate
5849640, Apr 01 1996 Vanguard International Semiconductor Corporation In-situ SOG etchback and deposition for IMD process
5851715, Jun 01 1994 Wacker-Chemie GmbH Process for the silylation of inorganic oxides
5858457, Sep 25 1997 National Technology & Engineering Solutions of Sandia, LLC Process to form mesostructured films
5920790, Aug 29 1997 Freescale Semiconductor, Inc Method of forming a semiconductor device having dual inlaid structure
6140252, Jun 23 1994 Texas Instruments Incorporated Porous dielectric material with improved pore surface properties for electronics applications
6149828, May 05 1997 U S BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT Supercritical etching compositions and method of using same
6171661, Feb 25 1998 Applied Materials, Inc. Deposition of copper with increased adhesion
6177329, Apr 15 1999 Integrated circuit structures having gas pockets and method for forming integrated circuit structures having gas pockets
6232658, Jun 30 1999 Bell Semiconductor, LLC Process to prevent stress cracking of dielectric films on semiconductor wafers
6258735, Oct 05 2000 Applied Materials, Inc. Method for using bypass lines to stabilize gas flow and maintain plasma inside a deposition chamber
6268276, Dec 21 1998 Chartered Semiconductor Manufacturing Ltd.; Nanyang Technological University of Singapore Area array air gap structure for intermetal dielectric application
6270846, Mar 02 2000 National Technology & Engineering Solutions of Sandia, LLC Method for making surfactant-templated, high-porosity thin films
6271273, Jul 14 2000 Shipley Company, L.L.C.; SHIPLEY COMPANY, L L C Porous materials
6306564, May 27 1997 Tokyo Electron Limited Removal of resist or residue from semiconductors using supercritical carbon dioxide
6312793, May 26 1999 ALSEPHINA INNOVATIONS INC Multiphase low dielectric constant material
6329017, Dec 23 1998 Battelle Memorial Institute Mesoporous silica film from a solution containing a surfactant and methods of making same
6329062, Feb 29 2000 Novellus Systems, Inc.; Novellus Systems, Inc Dielectric layer including silicalite crystals and binder and method for producing same for microelectronic circuits
6331480, Feb 18 1999 Taiwan Semiconductor Manufacturing Company Method to improve adhesion between an overlying oxide hard mask and an underlying low dielectric constant material
6340628, Dec 12 2000 Novellus Systems, Inc. Method to deposit SiOCH films with dielectric constant below 3.0
6365266, Dec 07 1999 Air Products and Chemicals, Inc Mesoporous films having reduced dielectric constants
6383466, Dec 28 1998 Battelle Memorial Institute Method of dehydroxylating a hydroxylated material and method of making a mesoporous film
6383955, Feb 05 1998 ASM Japan K.K. Silicone polymer insulation film on semiconductor substrate and method for forming the film
6386466, Apr 19 1999 Disco Corporation Cleaning apparatus
6387453, Mar 02 2000 National Technology & Engineering Solutions of Sandia, LLC Method for making surfactant-templated thin films
6391932, Aug 08 2000 Shipley Company, L.L.C. Porous materials
6392017, Jul 27 1999 Heska Corporation Parasitic helminth DiAg2 proteins and uses thereof
6420441, Oct 01 1999 Shipley Company, L.L.C. Porous materials
6444715, Jun 06 2000 Honeywell International, Inc Low dielectric materials and methods of producing same
6455417, Jul 05 2001 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming damascene structure employing bi-layer carbon doped silicon nitride/carbon doped silicon oxide etch stop layer
6479374, Apr 01 1998 Asahi Kasei Kabushiki Kaisha Method of manufacturing interconnection structural body
6500770, Apr 22 2002 Taiwan Semiconductor Manufacturing Company, Ltd Method for forming a multi-layer protective coating over porous low-k material
6541397, Mar 29 2002 Applied Materials, Inc. Removable amorphous carbon CMP stop
6548113, Dec 23 1998 Battelle Memorial Institute Vacuum/gas phase reactor for dehydroxylation and alkylation of porous silica
6573030, Feb 17 2000 Applied Materials, Inc Method for depositing an amorphous carbon layer
6576345, Nov 30 2000 Novellus Systems, Inc Dielectric films with low dielectric constants
6596467, Sep 13 2000 Shipley Company, L.L.C. Electronic device manufacture
6596654, Aug 24 2001 Novellus Systems, Inc. Gap fill for high aspect ratio structures
6610362, Nov 20 2000 Intel Corporation; INTEL CORPORATION, A CORPORATION OF DELAWARE Method of forming a carbon doped oxide layer on a substrate
6632478, Feb 22 2001 Applied Materials, Inc. Process for forming a low dielectric constant carbon-containing film
6667147, Sep 13 2000 Shipley Company, L.L.C. Electronic device manufacture
6677251, Jul 29 2002 Taiwan Semiconductor Manufacturing Co., Ltd Method for forming a hydrophilic surface on low-k dielectric insulating layers for improved adhesion
6715498, Sep 06 2002 Novellus Systems, Inc. Method and apparatus for radiation enhanced supercritical fluid processing
6756085, Sep 14 2001 Axcelis Technologies, Inc.; Axcelis Technologies, Inc Ultraviolet curing processes for advanced low-k materials
6797643, Oct 23 2002 Applied Materials Inc.; Applied Materials, Inc Plasma enhanced CVD low k carbon-doped silicon oxide film deposition using VHF-RF power
6805801, Mar 13 2002 Novellus Systems, Inc Method and apparatus to remove additives and contaminants from a supercritical processing solution
6812043, Apr 25 2002 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD Method for forming a carbon doped oxide low-k insulating layer
6815373, Apr 16 2002 Applied Materials Inc. Use of cyclic siloxanes for hardness improvement of low k dielectric films
6831284, Nov 21 2002 Applied Materials, Inc Large area source for uniform electron beam generation
6846380, Jun 13 2002 BOC EDWARDS, INC Substrate processing apparatus and related systems and methods
6848458, Feb 05 2002 Novellus Systems, Inc.; Novellus Systems, Inc Apparatus and methods for processing semiconductor substrates using supercritical fluids
6849549, Dec 04 2003 Taiwan Semiconductor Manufacturing Co., Ltd Method for forming dummy structures for improved CMP and reduced capacitance
6867086, Mar 13 2003 Novellus Systems, Inc Multi-step deposition and etch back gap fill process
6903004, Dec 16 2003 SHENZHEN XINGUODU TECHNOLOGY CO , LTD Method of making a semiconductor device having a low K dielectric
6914014, Jan 13 2003 Applied Materials, Inc.; Applied Materials, Inc Method for curing low dielectric constant film using direct current bias
6943121, Nov 21 2002 Intel Corporation Selectively converted inter-layer dielectric
6967072, Jun 08 2000 Applied Materials, Inc.; Applied Materials, Inc Photolithography scheme using a silicon containing resist
7018918, Nov 21 2002 Intel Corporation Method of forming a selectively converted inter-layer dielectric using a porogen material
7087271, Jun 29 2001 POSTECH ACADEMY-INDUSTRY FOUNDATION Method for preparing low dielectric films
7094713, Mar 11 2004 Novellus Systems, Inc Methods for improving the cracking resistance of low-k dielectric materials
7223526, Jun 08 2000 Applied Materials, Inc. Method of depositing an amorphous carbon layer
20020001973,
20020016085,
20020034626,
20020064341,
20020106500,
20020123240,
20020141024,
20020192980,
20030064607,
20030066544,
20030119307,
20030157248,
20030198895,
20040018750,
20040069410,
20040096586,
20040096593,
20040096672,
20040099952,
20040101633,
20040102031,
20040102032,
20040161532,
20040170760,
20040185679,
20040224504,
20050064698,
20060110931,
20060154086,
20060197881,
20060205223,
20070128538,
WO9507543,
////
Executed onAssignorAssigneeConveyanceFrameReelDoc
Dec 23 2005Novellus Systems, Inc.(assignment on the face of the patent)
Jan 20 2006SUBRAMONIUM, PRAMODNovellus Systems, IncASSIGNMENT OF ASSIGNORS INTEREST SEE DOCUMENT FOR DETAILS 0173780207 pdf
Jan 20 2006FANG, ZHIYUANNovellus Systems, IncASSIGNMENT OF ASSIGNORS INTEREST SEE DOCUMENT FOR DETAILS 0173780207 pdf
Jan 20 2006HENRI, JONNovellus Systems, IncASSIGNMENT OF ASSIGNORS INTEREST SEE DOCUMENT FOR DETAILS 0173780207 pdf
Date Maintenance Fee Events
Sep 23 2011M1551: Payment of Maintenance Fee, 4th Year, Large Entity.
Dec 03 2015M1552: Payment of Maintenance Fee, 8th Year, Large Entity.
Jan 20 2020REM: Maintenance Fee Reminder Mailed.
Jul 06 2020EXP: Patent Expired for Failure to Pay Maintenance Fees.


Date Maintenance Schedule
Jun 03 20114 years fee payment window open
Dec 03 20116 months grace period start (w surcharge)
Jun 03 2012patent expiry (for year 4)
Jun 03 20142 years to revive unintentionally abandoned end. (for year 4)
Jun 03 20158 years fee payment window open
Dec 03 20156 months grace period start (w surcharge)
Jun 03 2016patent expiry (for year 8)
Jun 03 20182 years to revive unintentionally abandoned end. (for year 8)
Jun 03 201912 years fee payment window open
Dec 03 20196 months grace period start (w surcharge)
Jun 03 2020patent expiry (for year 12)
Jun 03 20222 years to revive unintentionally abandoned end. (for year 12)