A profile model to characterize a structure to be examined using optical metrology is evaluated by displaying a set of profile parameters that characterizes the profile model. Each profile parameter has a range of values for the profile parameter. For each profile parameter having a range of values, an adjustment tool is displayed for selecting a value for the profile parameter within the range of values. A measured diffraction signal, which was measured using an optical metrology tool, is displayed. A simulated diffraction signal, which was generated based on the values of the profile parameters selected using the adjustment tools for the profile parameters, is displayed. The simulated diffraction signal is overlaid with the measured diffraction signal.
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1. A method of evaluating a profile model to characterize a structure to be examined using optical metrology, the method comprising:
a) displaying a set of profile parameters that characterizes the profile model, each profile parameter having a range of values for the profile parameter;
b) for each profile parameter having a range of values, displaying an adjustment tool for selecting a value for the profile parameter within the range of values;
c) displaying a measured diffraction signal, wherein the measured diffraction signal was measured using an optical metrology tool; and
d) displaying a simulated diffraction signal, wherein the simulated diffraction signal was generated based on the values of the profile parameters selected using the adjustment tools for the profile parameters, and wherein the simulated diffraction signal is overlaid with the measured diffraction signal.
11. A computer-readable medium containing computer-executable instructions for evaluating a profile model to characterize a structure to be examined using optical metrology, comprising instructions for:
a) displaying a set of profile parameters that characterizes the profile model, each profile parameter having a range of values for the profile parameter;
b) for each profile parameter having a range of values, displaying an adjustment tool for selecting a value for the profile parameter within the range of values;
c) displaying a measured diffraction signal, wherein the measured diffraction signal was measured using an optical metrology tool; and
d) displaying a simulated diffraction signal, wherein the simulated diffraction signal was generated based on the values of the profile parameters selected using the adjustment tools for the profile parameters, and wherein the simulated diffraction signal is overlaid with the measured diffraction signal.
18. A system for evaluating a profile model to characterize a structure to be examined using optical metrology, the system comprising:
a display unit; and
a processor connected to the display unit and configured to:
a) display on the display unit a set of profile parameters that characterizes the profile model, each profile parameter having a range of values for the profile parameter;
b) for each profile parameter having a range of values, display on the display unit an adjustment tool for selecting a value for the profile parameter within the range of values;
c) display on the display unit a measured diffraction signal, wherein the measured diffraction signal was measured using an optical metrology tool; and
d) display on the display unit a simulated diffraction signal, wherein the simulated diffraction signal was generated based on the values of the profile parameters selected using the adjustment tools for the profile parameters, and wherein the simulated diffraction signal is overlaid with the measured diffraction signal.
3. The method of
when a new value is selected for a profile parameter using the adjustment tool for the profile parameter, displaying a new simulated diffraction signal, wherein the new simulated diffraction signal was generated based on the new value selected for the profile parameter, and wherein the new simulated diffraction signal is overlaid with the measured diffraction signal.
4. The method of
when the new value is selected, displaying a new profile model.
5. The method of
for each profile parameter having a range of values, displaying the selected value for the profile parameter.
6. The method of
for each profile parameter having a range of values, displaying the range of values.
7. The method of
8. The method of
9. The method of
generating a set of hypothetical profiles by varying one or more of the profile parameters that characterize the profile model;
generating a set of simulated diffraction signals using the set of hypothetical profiles; and
storing the set of hypothetical profiles and set of simulated diffraction signals in a library.
10. The method of
generating a first hypothetical profile using the profile model;
generating a first simulated diffraction signal using the first hypothetical profile;
obtaining a measured diffraction signal;
comparing the first simulated diffraction signal and the measured diffraction signal; and
when the first simulated diffraction signal and the measured diffraction signal do not match within a matching criterion, generating a second hypothetical profile by adjusting one or more of the profile parameters that characterize the profile model;
generating a second simulated diffraction signal using the second hypothetical profile; and
comparing the second simulated diffraction signal and the measured diffraction signal.
12. The computer-readable medium of
when a new value is selected for a profile parameter using the adjustment tool for the profile parameter, displaying a new simulated diffraction signal, wherein the new simulated diffraction signal was generated based on the new value selected for the profile parameter, wherein the new simulated diffraction signal is overlaid with the measured diffraction signal.
13. The computer-readable medium of
when the new value is selected, displaying a new profile model.
14. The computer-readable medium of
for each profile parameter having a range of values, displaying the selected value for the profile parameter.
15. The computer-readable medium of
for each profile parameter having a range of values, displaying the range of values.
16. The computer-readable medium of
generating a set of hypothetical profile by varying one or more of the profile parameters that characterize the profile model;
generating a set of simulated diffraction signals using the set of hypothetical profiles; and
storing the set of hypothetical profiles and set of simulate diffraction signals in a library.
17. The computer-readable medium of
generating a first hypothetical profile using the profile model;
generating a first simulated diffraction signal using the first hypothetical profile;
obtaining a measured diffraction signal;
comparing the first simulated diffraction signal and the measured diffraction signal; and
when the first simulated diffraction signal and the measured diffraction signal do not match within a matching criteria, generating a second hypothetical profile by adjusting one or more of the profile parameters that characterize the profile model;
generating a second simulated diffraction signal using the second hypothetical profile; and
comparing the second simulated diffraction signal and the measured diffraction signal.
19. The system of
when a new value is selected for a profile parameter using the adjustment tool for the profile parameter, display on the display unit a new simulated diffraction signal, wherein the new simulated diffraction signal was generated based on the new value selected for the profile parameter, wherein the new simulated diffraction signal is overlaid with the measured diffraction signal.
20. The system of
for each profile parameter having a range of values, display on the display the selected value for the profile parameter.
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1. Field
The present application generally relates to optical metrology of a structure formed on a semiconductor wafer, and, more particularly, to evaluating a profile model to characterize the structure to be examined using optical metrology.
2. Description of the Related Art
Optical metrology involves directing an incident beam at a structure, measuring the resulting diffracted beam, and analyzing the diffracted beam to determine a feature of the structure. In semiconductor manufacturing, optical metrology is typically used for quality assurance. For example, after fabricating a structure on a semiconductor wafer, an optical metrology tool is used to determine the profile of the structure. By determining the profile of the structure, the quality of the fabrication process utilized to form the structure can be evaluated.
In one conventional optical metrology system, a diffraction signal collected from illuminating a structure (a measured diffraction signal) is compared to simulated diffraction signals, which are associated with hypothetical profiles of the structure. When a match is found between the measured diffraction signal and one of the simulated diffraction signals, the hypothetical profile associated with the matching simulated diffraction signal is presumed to represent the actual profile of the structure.
The hypothetical profiles, which are used to generate the simulated diffraction signals, are generated based on a profile model that characterizes the structure to be examined. Thus, in order to accurately determine the profile of the structure using optical metrology, a profile model that accurately characterizes the structure should be used.
In one exemplary embodiment, a profile model to characterize a structure to be examined using optical metrology is evaluated by displaying a set of profile parameters that characterizes the profile model. Each profile parameter has a range of values for the profile parameter. For each profile parameter having a range of values, an adjustment tool is displayed for selecting a value for the profile parameter within the range of values. A measured diffraction signal, which was measured using an optical metrology tool, is displayed. A simulated diffraction signal, which was generated based on the values of the profile parameters selected using the adjustment tools for the profile parameters, is displayed. The simulated diffraction signal is overlaid with the measured diffraction signal.
The following description sets forth numerous specific configurations, parameters, and the like. It should be recognized, however, that such description is not intended as a limitation on the scope of the present invention, but is instead provided as a description of exemplary embodiments.
1. Optical Metrology Tools
With reference to
As depicted in
Optical metrology system 100 also includes a processing module 114 configured to receive the measured diffraction signal and analyze the measured diffraction signal. The processing module is configured to determine one or more features of the periodic grating using any number of methods which provide a best matching diffraction signal to the measured diffraction signal. These methods have been described elsewhere and include a library-based process, or a regression based process using simulated diffraction signals obtained by rigorous coupled wave analysis and machine learning systems.
2. Library-Based Process of Determining Feature of Structure
In a library-based process of determining one or more features of a structure, the measured diffraction signal is compared to a library of simulated diffraction signals. More specifically, each simulated diffraction signal in the library is associated with a hypothetical profile of the structure. When a match is made between the measured diffraction signal and one of the simulated diffraction signals in the library or when the difference of the measured diffraction signal and one of the simulated diffraction signals is within a preset or matching criterion, the hypothetical profile associated with the matching simulated diffraction signal is presumed to represent the actual profile of the structure. The matching simulated diffraction signal and/or hypothetical profile can then be utilized to determine whether the structure has been fabricated according to specifications.
Thus, with reference again to
The set of hypothetical profiles stored in library 116 can be generated by characterizing the profile of periodic grating 102 using a profile model. The profile model is characterized using a set of profile parameters. The profile parameters of the profile model are varied to generate hypothetical profiles of varying shapes and dimensions. The process of characterizing the actual profile of periodic grating 102 using profile model and a set of profile parameters can be referred to as parameterizing.
For example, as depicted in
As described above, the set of hypothetical profiles stored in library 116 (
With reference again to
For a more detailed description of a library-based process, see U.S. patent application Ser. No. 09/907,488, titled GENERATION OF A LIBRARY OF PERIODIC GRATING DIFFRACTION SIGNALS, filed on Jul. 16, 2001, which is incorporated herein by reference in its entirety.
3. Regression-Based Process of Determining Feature of Structure
In a regression-based process of determining one or more features of a structure, the measured diffraction signal is compared to a simulated diffraction signal (i.e., a trial diffraction signal). The simulated diffraction signal is generated prior to the comparison using a set of profile parameters (i.e., trial profile parameters) for a hypothetical profile. If the measured diffraction signal and the simulated diffraction signal do not match or when the difference of the measured diffraction signal and one of the simulated diffraction signals is not within a preset or matching criterion, another simulated diffraction signal is generated using another set of profile parameters for another hypothetical profile, then the measured diffraction signal and the newly generated simulated diffraction signal are compared. When the measured diffraction signal and the simulated diffraction signal match or when the difference of the measured diffraction signal and one of the simulated diffraction signals is within a preset or matching criterion, the hypothetical profile associated with the matching simulated diffraction signal is presumed to represent the actual profile of the structure. The matching simulated diffraction signal and/or hypothetical profile can then be utilized to determine whether the structure has been fabricated according to specifications.
Thus, with reference again to
The simulated diffraction signals and hypothetical profiles can be stored in a library 116 (i.e., a dynamic library). The simulated diffraction signals and hypothetical profiles stored in library 116 can then be subsequently used in matching the measured diffraction signal.
For a more detailed description of a regression-based process, see U.S. patent application Ser. No. 09/923,578, titled METHOD AND SYSTEM OF DYNAMIC LEARNING THROUGH A REGRESSION-BASED LIBRARY GENERATION PROCESS, filed on Aug. 6, 2001, which is incorporated herein by reference in its entirety.
4. Rigorous Coupled Wave Analysis
As described above, simulated diffraction signals are generated to be compared to measured diffraction signals. As will be described below, the simulated diffraction signals can be generated by applying Maxwell's equations and using a numerical analysis technique to solve Maxwell's equations. It should be noted, however, that various numerical analysis techniques, including variations of RCWA, can be used.
In general, RCWA involves dividing a hypothetical profile into a number of sections, slices, or slabs (hereafter simply referred to as sections). For each section of the hypothetical profile, a system of coupled differential equations is generated using a Fourier expansion of Maxwell's equations (i.e., the components of the electromagnetic field and permittivity (ε)). The system of differential equations is then solved using a diagonalization procedure that involves eigenvalue and eigenvector decomposition (i.e., Eigen-decomposition) of the characteristic matrix of the related differential equation system. Finally, the solutions for each section of the hypothetical profile are coupled using a recursive-coupling schema, such as a scattering matrix approach. For a description of a scattering matrix approach, see Lifeng Li, “Formulation and comparison of two recursive matrix algorithms for modeling layered diffraction gratings,” J. Opt. Soc. Am. A13, pp 1024-1035 (1996), which is incorporated herein by reference in its entirety. For a more detail description of RCWA, see U.S. patent application Ser. No. 09/770,997, titled CACHING OF INTRA-LAYER CALCULATIONS FOR RAPID RIGOROUS COUPLED-WAVE ANALYSES, filed on Jan. 25, 2001, which is incorporated herein by reference in its entirety.
5. Machine Learning Systems
The simulated diffraction signals can be generated using a machine learning system (MLS) employing a machine learning algorithm, such as back-propagation, radial basis function, support vector, kernel regression, and the like. For a more detailed description of machine learning systems and algorithms, see “Neural Networks” by Simon Haykin, Prentice Hall, 1999, which is incorporated herein by reference in its entirety. See also U.S. patent application Ser. No. 10/608,300, titled OPTICAL METROLOGY OF STRUCTURES FORMED ON SEMICONDUCTOR WAFERS USING MACHINE LEARNING SYSTEMS, filed on Jun. 27, 2003, which is incorporated herein by reference in its entirety.
In one exemplary embodiment, the simulated diffraction signals in a library of diffraction signals, such as library 116 (
In another exemplary embodiment, the simulated diffractions used in regression-based process are generated using a MLS, such as MLS 118 (
6. Evaluating a Profile Model
As described above, in both a library-based process and a regression-based process, a simulated diffraction signal is generated based on a hypothetical profile of the structure to be examined. As also described above, the hypothetical profile is generated based on a profile model that characterizes the structure to be examined. The profile model is characterized using a set of profile parameters, which are varied to generate hypothetical profiles of varying shapes and sizes.
With reference to
In step 302, a set of profile parameters that characterize the profile model is displayed.
As depicted in
In the present example, the profile parameters in set of profile parameters 402 have ranges of values. In particular, profile parameters x0, x1, x2, and x3 have ranges of values associated with ranges of values for the top width, bottom width, footing height, and height from the top of the footing to the top of profile model 404, respectively. It should be recognized, however, that profile model 404 can be characterized with one or more profile parameters that are fixed. For example, the profile parameters characterizing the angle of incidence of the metrology beam can be fixed, such as at zero degrees. In the present example, the profile parameters having ranges of values are displayed, while the profile parameters that are fixed are not displayed. It should be recognized, however, that profile parameters that are fixed can be displayed with the profile parameters having ranges of values.
With reference again to
It should be recognized, however, that various types of adjustment tools can be used. For example, the adjustment tool can be a dial/knob interface, two arrow buttons (for adjusting numerical values up or down), and the like. It should also be recognized that the range of values can be displayed along with the selected value within the range. Furthermore, an adjustment tool can be provided to allow the range to be adjusted.
With reference again to
For example, with reference again to
In the present exemplary embodiment, a user can adjust the values of any one or more of the displayed profile parameters. A new simulated diffraction signal, which is generated using the adjusted values of the profile parameters, is then displayed. Thus, in this manner, a user can visually evaluate the effect that adjusting one or more profile parameters will have on the simulated diffraction signal. Additionally, by displaying the simulated diffraction signal overlaid with the measured diffraction signal, the user can adjust the values of the profile parameters to improve the match between the simulated diffraction signal and the measured diffraction signal. Furthermore, the user can determine the desired ranges of values of the profile parameters.
For example,
With reference to
It should be recognized that computer system 500 can include various additional components not depicted in
Although exemplary embodiments have been described, various modifications can be made without departing from the spirit and/or scope of the present invention. Therefore, the present invention should not be construed as being limited to the specific forms shown in the drawings and described above.
Bao, Junwei, Yedur, Sanjay, Wen, Youxian, Chard, Jeffrey A.
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