A light emitting diode (LED) with higher illumination efficiency is revealed. The LED includes a LED chip and an optical layer arranged on the bottom of the LED chip. The optical layer is a light-guiding layer, a light reflective layer or an energy-conversion layer that increases light emitting efficiency of the LED. Furthermore, a rough layer is disposed between the LED chip and the optical layer so as to increase surface area of the LED chip. Thus light emitted from the LED chip enters the optical layer more easily and the illumination efficiency of the LED is increased.
|
1. A light emitting diode (LED) with higher illumination efficiency comprising:
a light emitting diode (LED) chip;
an optical layer disposed on bottom of the LED chip for increasing illumination efficiency of the LED chip while the optical layer is an energy-conversion layer that extends to cover sides of the LED chip; and
a rough layer disposed between the LED chip and the optical layer while surface roughness of the rough layer ranges from 0.5 nm to 150 nm.
2. The LED as claimed in
3. The LED as claimed in
a loading base for mounting the LED and having two conductive pins while the LED chip is electrically connected with the two conductive pins by wires; and
a covering covered over the loading base.
5. The LED as claimed in
6. The LED as claimed in
a selective reflective layer disposed on the LED chip, corresponding to the optical layer and the selective reflective layer is a Bragg grating.
|
The present invention relates to a light emitting diode, especially to a light emitting diode that increases illumination efficiency of light source.
Light emitting diode (LED) is a fine solid-state light source made of semiconductor material. The light source includes two electrodes. After being applied with voltage (minimum current), the electron-hole recombination process produces some photons due to energy gap of electrons and electron-holes when electrons cross the junction from the n- to the p-type material. The LED is different from a general light bulb and it features on low power consumption, with long lifetime, low driving voltage, and fast reaction. Moreover, the LED has compact volume, and good shock resistance so that it's suitable for mass production in the form of mini or array-type elements. It has been applied to electrical appliances, computers and communication products and has become one of the essentials in our daily lives.
According to wavelength, LED is divided into visible LED (wavelength from 450 to 680 nm) and invisible LED (wavelength from 850 to 1550 nm).
Once being classified by material of the epitaxy layer, the LED is divided into four categories: binary compound (such as GaAsGaSbGaN etc.), ternary compound (such as AlxGal-xAsAlxGal-xPInl-xGaxAs etc.), quaternary compound (such as AlInGaPInAlGaAsAlxGal-xAsyPl-y etc.) and GaN-based compound.
If being differentiated by the brightness, there are two types-high brightness LED and the general LED. However, the light from LED is directive and each manufacturer has different standard for illumination. It's difficult to differentiate the high brightness LED and the general LED correctly. Moreover, the brightness and the illumination efficiency of the LED are related to material of the epitaxy layer. It's preferred to use material of the epitaxy layer as criterion to define and brightness. The high brightness LED is formed by quaternary compound and GaN-based compound while the general LED is made from binary compound/ternary compound except GaN-based compound.
Since 1968 a first commercial LED is developed by HP (Hewlett-Packard), functions and applications of the LED are improved dramatically along with improvement of material and manufacturing processes. According to Haitz's law, brightness of the LED is doubled per 18˜24 months while the cost of each unit is reduced to about one tenth per one decade. In recent years, applications of the high brightness LED are getting broader. Besides outdoor displays and traffic signs, the high brightness LED is also used in light sources of vehicles and backlight sources of LCD on portable electric appliances. After analyzing global market of high brightness LED in 2003, the main application is in portable electric appliances, especially the camera phones. Due to population of mobile phones with colorful displays and camera phones with flashlight, demands for high cost white-light LED increase dramatically so that the mobile phones achieves about 41% market share of the high brightness LED in 2003. Compared with the amount in 2002, the market share grows 3%. As to the LED for the future, due to increasing improvement of illumination efficiency and brightness of LED, Mercury became one of the forbidden materials to be used in EU after 2006, and increasing cost of global energy, it is expected that high brightness LED is going to replace other light sources available now in the market of illumination devices, vehicles and middle/large size displays. Generally, high brightness LED is still a niche product in illumination products. Just like clothes and food, the amount of illumination devices should be satisfied firstly and then the quality is required. Without sufficient light or brightness, individual's working efficiency or vision may be affected. This also has negative effects on people's physical and mental health.
Therefore it is a primary object of the present invention to provide a light emitting diode with higher light emitting efficiency that includes an optical layer such as a light-guiding layer, a light reflective layer or an energy-conversion layer arranged on bottom of the LED chip for increasing light emitting efficiency.
It is another object of the present invention to provide a light emitting diode with higher light emitting efficiency that includes a rough layer disposed between LED chip and the optical layer so as to increase surface area of the LED chip. Thus light emitted from the LED chip enters the optical layer more easily and the light emitting efficiency of the LED is improved.
In order to achieve above objects, the present invention provides a light emitting diode that increases illumination efficiency of light source. The LED consists of a LED chip and an optical layer arranged bottom of the LED chip. The optical layer can be a light-guiding layer, a light reflective layer or an energy-conversion layer that increases illumination efficiency of the LED. Moreover, a rough layer is disposed between the LED chip and the optical layer to increase surface area of the LED chip. Thus light from the LED chip enters the optical layer more easily and illumination efficiency of the LED is further improved.
The structure and the technical means adopted by the present invention to achieve the above and other objects can be best understood by referring to the following detailed description of the preferred embodiments and the accompanying drawings, wherein
Refer to
Refer to
Refer to
Refer to
Refer to
Refer to
Refer to
Refer to
Refer to
Refer to
Refer to
In summary, it is learned that a light emitting diode (LED) with higher illumination efficiency according to the present invention includes an optical layer arranged on the bottom of a LED chip. The optical layer is a light-guiding layer, a light reflective layer or an energy-conversion layer that increases light emitting efficiency of the LED. Furthermore, a rough layer is disposed between the LED chip and the optical layer so as to increase surface area of the LED chip. Thus light emitted from the LED chip enters the optical layer more easily and the illumination efficiency of the LED is increased. Moreover, an energy-conversion layer is arranged on the LED for converting wavelength of light. In addition, a plurality of heat dissipation channels is arranged on the energy-conversion layer or the optical layer for releasing heat. A thermal conductive material is arranged on each of the heat dissipation channels for improving heat releasing efficiency. Or a heat dissipation layer is arranged on bottom of the optical layer/energy conversion layer for increasing heat dissipation efficiency. A selective reflective layer is arranged on top of the LED chip so as to select light with certain wavelength being passed or reflected for increasing light conversion efficiency of the LED. Therefore, LED of the present invention do have higher light illumination efficiency.
Additional advantages and modifications will readily occur to those skilled in the art. Therefore, the invention in its broader aspects is not limited to the specific details, and representative devices shown and described herein. Accordingly, various modifications may be made without departing from the spirit or scope of the general inventive concept as defined by the appended claims and their equivalents.
Pan, Shyi-Ming, Huang, Kuo-Chin, Cheng, Wei-Kang
Patent | Priority | Assignee | Title |
Patent | Priority | Assignee | Title |
6586874, | May 16 1997 | Kabushiki Kaisha Toshiba | Image display device and light emission device |
Executed on | Assignor | Assignee | Conveyance | Frame | Reel | Doc |
Mar 10 2008 | PAN, SHYI-MING | Formosa Epitaxy Incorporation | ASSIGNMENT OF ASSIGNORS INTEREST SEE DOCUMENT FOR DETAILS | 020829 | /0102 | |
Mar 10 2008 | CHENG, WEI-KANG | Formosa Epitaxy Incorporation | ASSIGNMENT OF ASSIGNORS INTEREST SEE DOCUMENT FOR DETAILS | 020829 | /0102 | |
Mar 10 2008 | HUANG, KUO-CHIN | Formosa Epitaxy Incorporation | ASSIGNMENT OF ASSIGNORS INTEREST SEE DOCUMENT FOR DETAILS | 020829 | /0102 | |
Apr 19 2008 | Formosa Epitaxy Incorporation | (assignment on the face of the patent) | / | |||
Feb 25 2010 | Formosa Epitaxy Incorporation | JIANG SU CAN YANG OPTOELECTRONIC LTD | LICENSE SEE DOCUMENT FOR DETAILS | 024838 | /0442 | |
Sep 22 2016 | Formosa Epitaxy Incorporation | EPISTAR CORPORATION | ASSIGNMENT OF ASSIGNORS INTEREST SEE DOCUMENT FOR DETAILS | 040149 | /0765 |
Date | Maintenance Fee Events |
Jun 12 2012 | STOL: Pat Hldr no Longer Claims Small Ent Stat |
Jul 23 2012 | M1461: Payment of Filing Fees under 1.28(c). |
May 09 2013 | M1551: Payment of Maintenance Fee, 4th Year, Large Entity. |
Jun 08 2017 | M1552: Payment of Maintenance Fee, 8th Year, Large Entity. |
Jun 09 2021 | M1553: Payment of Maintenance Fee, 12th Year, Large Entity. |
Date | Maintenance Schedule |
Dec 22 2012 | 4 years fee payment window open |
Jun 22 2013 | 6 months grace period start (w surcharge) |
Dec 22 2013 | patent expiry (for year 4) |
Dec 22 2015 | 2 years to revive unintentionally abandoned end. (for year 4) |
Dec 22 2016 | 8 years fee payment window open |
Jun 22 2017 | 6 months grace period start (w surcharge) |
Dec 22 2017 | patent expiry (for year 8) |
Dec 22 2019 | 2 years to revive unintentionally abandoned end. (for year 8) |
Dec 22 2020 | 12 years fee payment window open |
Jun 22 2021 | 6 months grace period start (w surcharge) |
Dec 22 2021 | patent expiry (for year 12) |
Dec 22 2023 | 2 years to revive unintentionally abandoned end. (for year 12) |