In a defect inspection for a semiconductor substrate, inspection objects include, in addition to a bare Si wafer, a wafer with various films formed on the surface thereof. For a sample formed with a metal film in particular, scattering light generated by surface roughness thereof is large, thus making it difficult to detect a minute defect and a minute foreign substance. It is desirable that a minute defect and a minute foreign substance be detected regardless of scattering light generated by the roughness of the sample surface. Insertion of an analyzer in an optical path of a detection optical system at such an angle that the scattering light generated by the roughness becomes minimum permits suppressing the scattering light generated by the roughness.
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10. A defect detection method, by using a defect inspection device including:
a laser light source;
an illumination optical system for controlling light emitted from the laser light source;
a sample support for holding a sample to be inspected; and
a detection optical system for, when light emitted from the illumination optical system is irradiated to a surface of the sample to be inspected under an inspection condition, detects first scattering light scattered from an object on a surface of the sample including a foreign substance and a defect present on the surface and second scattering light scattered from surface roughness of the surface of the sample, the detection optical system having: a condensing part for condensing the first and second scattering light; a photoelectric converter for converting the first and second scattering light into an electrical signal; and an analyzer disposed between the condensing part and the photoelectric converter for suppressing the second scattering light inputted to the photoelectric converter, the analyzer having an adjustable angle;
a storage member which stores a database of analyzer angles in correspondence with inspection conditions including a direction of polarization, a direction of the detection, and a complex refractive index of a film material; and
a retrieval member which retrieves an inspection recipe including the inspection conditions for the sample to be inspected
wherein the defect detection method comprises the step of setting the angle of the analyzer based upon the inspection recipe and the inspection condition of the sample retrieved by the retrieval member in accordance with the stored database which stores a relationship of each of inspection conditions and the angle of the analyzer stored by the storage member so that intensity of the second scattering light becomes a minimum.
1. A defect inspection device comprising:
a laser light source;
an illumination optical system which controls light emitted from the laser light source;
a sample support which holds a sample to be inspected; and
a detection optical system which, when light emitted from the illumination optical system is irradiated to a surface of the sample to be
inspected under an inspection condition, detects first scattering light scattered from an object on a surface of the sample including a foreign substance and a defect present on the surface and second scattering light scattered from surface roughness of the surface of the sample;
wherein the detection optical system includes:
a condensing part for condensing the first and second scattering light;
a photoelectric converter for converting the first and second condensed scattering light into an electrical signal; and
an analyzer disposed between the condensing part and the photoelectric converter and configured so as to be rotatable about an optical center axis of the detection optical system;
a storage member which stores a database of analyzer angles in correspondence with inspection conditions including a direction of polarization, a direction of the detection, and a complex refractive index of a film material;
a retrieval member which retrieves an inspection recipe including the inspection condition for the sample to be inspected; and
an adjuster which adjusts the angle of the analyzer based upon the inspection recipe and the inspection condition of the sample retrieved by the retrieval member in accordance with the stored database which stores a relationship of each of inspection conditions and the angle of the analyzer stored by the storage member; and
wherein the defect inspection device, based on the electrical signal at the adjusted angle of the analyzer, detects the foreign substance and the defect present on the surface of the sample to be inspected.
2. The defect inspection device according to
wherein, as the detection optical system, at least two detection optical systems are provided.
3. The defect inspection device according to
wherein the illumination optical system has:
the laser light source;
an attenuator for adjusting an amount of light emitted from the laser light source;
a beam expander for expanding a beam diameter of light that has passed through the attenuator; and
a wavelength plate for setting polarization of light illuminating the sample to be inspected.
4. The defect inspection device according to
wherein the angle of the analyzer is set for each of the detection directions.
5. The defect inspection device according to
6. The defect inspection device according to
7. The defect inspection device according to
8. The defect inspection device according to
9. The defect inspection device according to
11. The defect detection method according to
wherein the sample to be inspected is a bare Si wafer.
12. The defect detection method according to
wherein the sample to be inspected is a wafer formed with a metal film.
13. The defect detection method according to
wherein as the detection optical system, at least two detection optical systems are provided, and
wherein the angle of the analyzer is set for each of the detection directions.
14. The defection detection method according to
15. The defect inspection method according to
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(1) Field of the Invention
The present invention relates to a defect inspection tool and a defect detection method, and more specifically to a foreign substance and defect inspection tool for inspecting a minute foreign substance and a minute defect present on the surface of a semiconductor substrate or the like with high sensitivity and high speed, and a defect detection method.
(2) Description of the Related Arts
In a manufacturing line for a semiconductor substrate, a thin-film substrate, or the like, to maintain and improve the yield ratio of the product, a defect and a foreign substance present on the surface of the semiconductor substrate, the thin-film substrate, or the like are inspected. For example, for a sample such as a semiconductor substrate before circuit pattern formation, it is required to detect a minute defect and foreign substance of 0.05 μm or less in size on the surface. With conventional inspection tools, for example, as in Japanese Patent Application Laid-Open Publication No. H9-304289) and U.S. Pat. No. 5,903,342, to detect such a minute defect and such a minute foreign substance, a laser beam condensed into several tens of micrometers in size is irradiated to a sample surface, and scattering light from the defect and the foreign substance is condensed and detected.
In a defect inspection for a semiconductor substrate, inspection objects include, in addition to a bare Si wafer, a wafer with various films formed on the surface thereof. For a sample formed with a metal film in particular, scattering light generated by surface roughness thereof is large, thus making it difficult to detect a minute defect and a minute foreign substance.
Therefore, it is an object of the present invention to provide a defect inspection tool and a defect detection method capable of detecting a minute defect and a minute foreign substance regardless of scattering light generated by roughness of a sample surface.
Main configuration of one aspect of the invention includes: a laser light source; an illumination optical system for controlling light emitted from the laser light source; a sample support for holding a sample to be inspected; and a detection optical system for, when light emitted from the illumination optical system is irradiated to a surface of the sample to be inspected, detecting first scattering light scattered from an object including a foreign substance and defect present on the surface and second scattering light scattered from surface roughness the surface has. The detection optical system includes: a condensing part for condensing the first and second scattering light; a photoelectric converter for converting these condensed scattering light into an electrical signal; and an analyzer for suppressing the second scattering light inputted to the photoelectric converter.
Insertion of the analyzer in an optical path of the detection optical system at such an angle that the scattering light generated by the roughness becomes minimum suppresses the scattering light generated by the roughness, thereby permitting detection of a minute defect and a minute foreign substance.
As described above, the invention can achieve an inspection while suppressing scattering light from roughness by the analyzer, thus permitting a detection of a minute foreign substance and a minute defect even in a sample formed with a metal film and large roughness.
These and other features, objects and advantages of the present invention will become more apparent from the following description when taken in conjunction with the accompanying drawings wherein:
Hereinafter, the embodiments of the present invention will be described with reference to the accompanying drawings.
The illumination optical system 101 is composed of a laser light source 2, an attenuator 3, a beam expander 4, a wavelength plate 5, and a condensing lens 7. A laser beam emitted from the laser light source 2 is adjusted to a required light amount by the attenuator 3, the beam diameter is expanded by the beam expander 4, and the polarization direction of illumination is set by the wavelength plate 5 to illuminate a detection area 8 of a wafer 1 while condensing light thereon by the condensing lens 7. Numerals 6a and 6b denote mirrors for changing the illumination optical path, and they are used when necessary. The wavelength plate 5 sets illuminating polarized light to S-polarized light, P-polarized light, or circular polarized light.
The detection optical system 102 is composed of a scattering light detecting lens 9 and a photoelectric conversion element 12. Scattering light from a foreign substance and a defect present in the detection area is condensed on the light receiving surface of the photoelectric conversion element 12 by the scattering light detecting lens 9. The photoelectric conversion element 12 generates an electrical signal of a magnitude proportional to the amount of scattering light received, and a signal processing circuit (not shown) performs signal processing to thereby detect a foreign substance and a defect and then detect the magnitude and position thereof. The photoelectric conversion element 12 is used for receiving this scattering light condensed by the detection optical system 102 and then performing photoelectric conversion thereon. Examples of such a photoelectric conversion element 12 include a TV camera, a COD linear sensor, a TDI sensor, and a photoelectric multiplier tube.
The wafer stage 103 is composed of a chuck (not shown) for holding the wafer 1, a rotating mechanism 14 for rotating the wafer 1, and a straight feed mechanism 13 for feeding the wafer 1 straight in the radial direction. Horizontal rotational scanning and straight movement of the wafer 1 on the wafer stage 103 permits detection of a foreign substance and a defect over the entire region of the wafer 1 and also permits magnitude measurement thereof.
The attenuator 3 is composed of a ½ wavelength plate and a polarized beam splitter (PBS). The attenuator 3 changes, by the ½ wavelength plate, the polarization direction of a beam (linear polarized light) emitted from the laser light source to change the amount of light passing through the PBS. Rotating the ½ wavelength plate changes the polarization direction, thereby permitting adjustment of the amount of light.
The detection optical systems 102 can be oriented multidirectionally, and outputs of photoelectric conversion elements 12a and 12b are subjected to addition, subtraction, division, or the like in accordance with purposes.
When a metal film or the like is formed on the surface of the wafer 1, the photoelectric conversion element 12 receives, in addition to scattering light from a foreign substance and a defect, scattering light from roughness of the sample surface. Thus, an analyzer 15 is inserted in an optical path of the detection optical system 102 and its angle is set so that the scattering light from the roughness becomes minimum. The angle setting is achieved by measuring the scattering light from the roughness, and this angle is fixed after set.
As shown in
As described above, the optimum analyzer angle varies depending on the condition such as the detected angle of elevation (θ0), the detected angle of orientation (φ), and the like.
(1) angle at which the scattering light from the roughness becomes minimum, and
(2) angle at which the ratio (S/N) between a defect detection signal and a roughness detection signal becomes maximum.
For the case (1) above, as in an inspection flow shown in
For the case (2) above, a database based on the inspection condition and the complex refractive indexes of the material can be prepared for each orientation of the detection optical system 102 through actual measurement or calculation, and then the analyzer angle can be adjusted after the recipe is downloaded, as in the inspection flow shown in
Nakao, Toshiyuki, Oshima, Yoshimasa
Patent | Priority | Assignee | Title |
10254235, | Feb 27 2009 | HITACHI HIGH-TECH CORPORATION | Defect inspecting method and defect inspecting apparatus |
10699927, | Dec 10 2018 | Samsung Electronics Co., Ltd. | Inspection apparatus and semiconductor structure-manufacturing apparatus including the same |
8638429, | Feb 27 2009 | Hitachi High-Technologies Corporation | Defect inspecting method and defect inspecting apparatus |
8922764, | Dec 27 2010 | HITACHI HIGH-TECH CORPORATION | Defect inspection method and defect inspection apparatus |
9228960, | Feb 27 2009 | HITACHI HIGH-TECH CORPORATION | Defect inspecting method and defect inspecting apparatus |
9683946, | Nov 08 2012 | HITACHI HIGH-TECH CORPORATION | Method and device for detecting defects and method and device for observing defects |
9841384, | Feb 27 2009 | HITACHI HIGH-TECH CORPORATION | Defect inspecting method and defect inspecting apparatus |
Patent | Priority | Assignee | Title |
4668860, | Oct 09 1985 | Optical Coating Laboratory, Inc. | Scattermeter using polarized light to distinguish between bulk and surface scatter |
4866264, | Oct 31 1988 | Northrop Corporation | Method and apparatus for measuring non-reciprocal loss of thin magnetic films and magnetic mirrors |
5333052, | Nov 27 1990 | Orbotech Ltd | Method and apparatus for automatic optical inspection |
5764363, | Jun 30 1995 | Nikon Corporation | Apparatus for observing a surface using polarized light |
5903342, | Apr 10 1995 | Hitachi High-Technologies Corporation | Inspection method and device of wafer surface |
6690469, | Sep 18 1998 | Hitachi, LTD | Method and apparatus for observing and inspecting defects |
6833913, | Feb 26 2002 | KLA-Tencor Technologies Corporation | Apparatus and methods for optically inspecting a sample for anomalies |
20010030296, | |||
20030206299, | |||
20050094864, | |||
EP335163, | |||
JP1245136, | |||
JP2000155099, | |||
JP2000193434, | |||
JP2001343329, | |||
JP2005526239, | |||
JP9304289, |
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