A lithographic apparatus is disclosed that includes a first gas shower configured to supply a first gas flow to an interior space of the apparatus, and a second gas shower configured to supply a second gas flow to the interior space of the apparatus, the gas showers configured to direct the first gas flow and the second gas flow at least partly towards each other. Also, a method for conditioning an interior space of a device manufacturing apparatus is provided that includes supplying a first conditioned gas flow and a second conditioned gas flow to the interior space, such that the first conditioned gas flow and the second conditioned gas flow are at least partly directed to each other.
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33. A method for conditioning an interior space of a device manufacturing apparatus, comprising:
supplying a first conditioned gas flow, a second conditioned gas flow, a third conditioned gas flow, and a fourth conditioned gas flow to the interior space, such that the first conditioned gas flow and the third conditioned gas flow are at least partly directed towards each other,
wherein a shape of sides of an outlet producing the first or the third conditioned gas flow is configured to produce a self-converging or a self-diverging gas flow to the interior space.
1. A lithographic apparatus, comprising:
a first gas shower configured to supply a first gas flow and a second gas flow to an interior space of the apparatus; and
a second gas shower configured to supply a third gas flow and a fourth gas flow to the interior space of the apparatus,
wherein the first and second gas showers are configured to direct the first gas flow and the third gas flow at least partly towards each other, and
wherein a shape of sides of an outlet of the first or the second gas showers is configured to produce a self-converging or a self-diverging gas flow to the interior space.
52. A lithographic apparatus, comprising:
a first gas shower configured to supply a first gas flow and a second gas flow to an interior space of the apparatus; and
a second gas shower configured to supply a third gas flow and a fourth gas flow to the interior space of the apparatus,
wherein the first and second gas showers are configured to direct the first gas flow and the third gas flow at least partly towards each other,
wherein the first and second gas showers are configured to direct the second gas flow and the fourth gas flow substantially parallel to each other, and
wherein the first and third gas flows comprise high velocity gas and the second and fourth gas flows comprise low velocity gas.
20. A lithographic apparatus, comprising:
an apparatus component having a first side and a second side facing away from the first side; and
a gas shower system comprising a first and second gas showers configured to supply a first gas flow at least partially towards the first side of the apparatus component, a second gas flow into an interior space of the lithographic apparatus, a third gas flow at least partially towards the second side of the apparatus component, and a fourth gas flow into the interior space and substantially parallel with the second gas flow,
wherein a shape of sides of an outlet of the first or the second gas showers is configured to produce a self-converging or a self-diverging gas flow towards the apparatus component.
48. A method for conditioning an interior space of a device manufacturing apparatus, comprising:
at least partially directing a first gas flow towards a first side of an apparatus component;
at least partially directing a second gas flow into the interior space of the device manufacturing apparatus;
at least partially directing a third gas flow towards a second side of the apparatus component; and
at least partially directing a fourth gas flow into the interior space of the device manufacturing apparatus substantially parallel with the second gas flow;
wherein the second side faces away from the first side, and
wherein a shape of sides of an outlet producing the first gas flow, the third gas flow, or both, is configured to produce a self-converging or a self-diverging gas flow.
2. The apparatus of
a component that extends at least partially between the first and third gas showers.
4. The apparatus of
an interferometer system configured to measure a displacement of a part of the apparatus utilizing one or more interferometer beams,
wherein the first gas shower is configured to supply at least part of the first gas flow to a region which is traversed by the one or more interferometer beams.
5. The apparatus of
a component of the apparatus that extends at least partially between the first and second gas showers and abuts or is located near the region that is traversed by the one or more interferometer beams.
6. The apparatus of
7. The apparatus of
8. The apparatus of
a substrate support moveable in an X- and/or Y- direction with respect to a projection system.
9. The apparatus of
a mirror that extends at least partially between the first and second gas showers and is used to measure a displacement of the substrate support in a Z-direction.
10. The apparatus of
11. The apparatus of
12. The apparatus of
13. The apparatus of
14. The apparatus of
a substrate support moveable with respect to a projection system,
wherein the first gas shower, the second gas shower, or both, is configured to direct part of its respective gas flow at least partly in a same direction as a movement of the substrate support.
15. The apparatus of
16. The apparatus of
17. The apparatus of
a gas outlet side comprising a plurality of inclined gas passages.
18. The apparatus of
a sheet having the plurality of inclined passages, each passage extending substantially obliquely through the sheet.
19. The apparatus of
21. The apparatus of
first and second gas showers which are configured to supply the first and third gas flows, respectively.
22. The apparatus of
23. The apparatus of
24. The apparatus of
25. The apparatus of
a third side extending between the first and second sides,
wherein the gas shower system is configured so that at least part of the first and third gas flows meet each other in front of the third side of the apparatus component during use.
27. The apparatus of
an interferometer system configured to measure a displacement of a part of the apparatus utilizing an interferometer beam,
wherein the gas shower system is configured to supply at least part of at least one of the first gas flow, the second gas flow, the third gas flow, or the fourth gas flow, to a region which is traversed by the interferometer beam.
28. The apparatus of
29. The apparatus of
30. The apparatus of
31. The apparatus of
32. The apparatus of
34. The method of
36. The method of
directing an interferometer beam across a region of the interior space; and
conditioning a path of the interferometer beam with the first gas flow, the third gas flow, or both.
37. The method of
38. The method of
directing the first gas flow towards a first side of a component of the apparatus; and
directing the third gas flow towards a second side of the component of the apparatus, the first side and the second side of the component facing away from each other.
39. The method of
40. The method of
41. The method of
towards a part of the third gas flow,
towards a component of the apparatus, or both.
42. The method of
towards a part of the third gas flow,
towards a component of the apparatus, or both.
43. The method of
towards a part of the third gas flow,
towards a component of the apparatus, or both.
44. The method of
to a converging part of the third gas flow,
towards a component of the apparatus, or both.
45. The method of
towards a collimated part of the third gas flow,
towards a component of the apparatus, or both.
46. The method of
toward each other,
towards a component of the apparatus, or both.
47. The method of
49. The method of
50. The method of
51. The method of
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The present invention relates to a lithographic apparatus and a method for conditioning an interior space of a device manufacturing apparatus.
A lithographic apparatus is a machine that applies a desired pattern onto a substrate, usually onto a target portion of the substrate. A lithographic apparatus can be used, for example, in the manufacture of integrated circuits (ICs). In that instance, a patterning structure, which is alternatively referred to as a mask or a reticle, may be used to generate a circuit pattern to be formed on an individual layer of the IC. This pattern can be transferred onto a target portion (e.g. comprising part of, one, or several dies) on a substrate (e.g. a silicon wafer). Transfer of the pattern is typically via imaging onto a layer of radiation-sensitive material (resist) provided on the substrate. In general, a single substrate will contain a network of adjacent target portions that are successively patterned. Known lithographic apparatus include so-called steppers, in which each target portion is irradiated by exposing an entire pattern onto the target portion at one time, and so-called scanners, in which each target portion is irradiated by scamming the pattern through a radiation beam in a given direction (the “scanning”-direction) while synchronously scanning the substrate parallel or anti-parallel to this direction. It is also possible to transfer the pattern from the patterning structure to the substrate by imprinting the pattern onto the substrate.
The application of gas showers is known from the art. For example, European patent EP 0 498 499 illustrates, in
Accordingly, it is desirable to provide a lithography apparatus, wherein the conditioning of at least part of the interior, and/or optical paths, in the apparatus may be improved.
According to an aspect of the invention, there is provided a lithographic apparatus, comprising a first gas shower configured to supply a first gas flow to an interior space of the apparatus, and a second gas shower configured to supply a second gas flow to the interior space of the apparatus, the gas showers configured to direct the first gas flow and the second gas flow at least partly towards each other.
According to an aspect of the invention, there is provided a lithographic apparatus, comprising an apparatus component having a first side and a second side facing away from the first side, and a gas shower system configured to supply a first gas flow at least partially towards the first side of the apparatus component, and to supply a second gas flow at least partially towards the second side of the apparatus component.
According to an aspect of the invention, there is provided a method for conditioning an interior space of a device manufacturing apparatus, comprising supplying a first conditioned gas flow and a second conditioned gas flow to the interior space, such that the first conditioned gas flow and the second conditioned gas flow are at least partly directed to each other.
According to an aspect of the invention, there is provided a method for conditioning an interior space of a device manufacturing apparatus, comprising at least partially directing a first gas flow towards a first side of an apparatus component, and at least partially directing a second gas flow towards a second side of the apparatus component, wherein the second side faces away from the first side.
Embodiments of the invention will now be described, by way of example only, with reference to the accompanying schematic drawings in which corresponding reference symbols indicate corresponding parts, and in which:
The illumination system may include various types of optical components, such as refractive, reflective, magnetic, electromagnetic, electrostatic or other types of optical components, or any combination thereof, for directing, shaping, or controlling radiation.
The support structure holds the patterning structure in a manner that depends on the orientation of the patterning structure, the design of the lithographic apparatus, and other conditions, such as for example whether or not the patterning structure is held in a vacuum environment. The support structure can use mechanical, vacuum, electrostatic or other clamping techniques to hold the patterning structure. The support structure may be a frame or a table, for example, which may be fixed or movable as required. The support structure may ensure that the patterning structure is at a desired position, for example with respect to the projection system. Any use of the terms “reticle” or “mask” herein may be considered synonymous with the more general term “patterning structure.”
The term “patterning structure” used herein should be broadly interpreted as referring to any device that can be used to impart a radiation beam with a pattern in its cross-section such as to create a pattern in a target portion of the substrate. It should be noted that the pattern imparted to the radiation beam may not exactly correspond to the desired pattern in the target portion of the substrate, for example if the pattern includes phase-shifting features or so called assist features. Generally, the pattern imparted to the radiation beam will correspond to a particular functional layer in a device being created in the target portion, such as an integrated circuit.
The patterning structure may be transmissive or reflective. Examples of patterning structures include masks, programmable mirror arrays, and programmable LCD panels. Masks are well known in lithography, and include mask types such as binary, alternating phase-shift, and attenuated phase-shift, as well as various hybrid mask types. An example of a programmable mirror array employs a matrix arrangement of small mirrors, each of which can be individually tilted so as to reflect an incoming radiation beam in different directions. The tilted mirrors impart a pattern in a radiation beam which is reflected by the mirror matrix.
The term “projection system” used herein should be broadly interpreted as encompassing any type of projection system, including refractive, reflective, catadioptric, magnetic, electromagnetic and electrostatic optical systems, or any combination thereof, as appropriate for the exposure radiation being used, or for other factors such as the use of an immersion liquid or the use of a vacuum. Any use of the term “projection lens” herein may be considered as synonymous with the more general term “projection system”.
As here depicted, the apparatus is of a transmissive type (e.g. employing a transmissive mask). Alternatively, the apparatus may be of a reflective type (e.g. employing a programmable mirror array of a type as referred to above, or employing a reflective mask).
The lithographic apparatus may be of a type having two (dual stage) or more substrate tables (and/or two or more support structures). In such “multiple stage” machines the additional tables may be used in parallel, or preparatory steps may be carried out on one or more tables while one or more other tables are being used for exposure.
The lithographic apparatus may also be of a type wherein at least a portion of the substrate may be covered by a liquid having a relatively high refractive index, e.g. water, so as to fill a space between the projection system and the substrate. An immersion liquid may also be applied to other spaces in the lithographic apparatus, for example, between the patterning structure and the projection system. Immersion techniques are well known in the art for increasing the numerical aperture of projection systems. The term “immersion” as used herein does not mean that a structure, such as a substrate, must be submerged in liquid, but rather only means that liquid is located between the projection system and the substrate during exposure.
Referring to
The illuminator IL may comprise an adjuster AD for adjusting the angular intensity distribution of the radiation beam. Generally, at least the outer and/or inner radial extent (commonly referred to as σ-outer and σ-inner, respectively) of the intensity distribution in a pupil plane of the illuminator can be adjusted. In addition, the illuminator IL may comprise various other components, such as an integrator IN and a condenser CO. The illuminator may be used to condition the radiation beam, to have a desired uniformity and intensity distribution in its cross-section.
The radiation beam B is incident on the patterning structure (e.g., mask) MA, which is held on the support structure (e.g., mask table) MT, and is patterned by the patterning structure. Having traversed the patterning structure MA, the radiation beam B passes through the projection system PS, which focuses the beam onto a target portion C of the substrate W. With the aid of the second positioner PW and position sensor IF (e.g. an interferometric device, linear encoder or capacitive sensor), the substrate table WT can be moved accurately, e.g. so as to position different target portions C in the path of the radiation beam B. Similarly, the first positioner PM and another position sensor (which is not explicitly depicted in
The depicted apparatus could be used in at least one of the following modes:
1. In step mode, the support structure MT and the substrate table WT are kept essentially stationary, while an entire pattern imparted to the radiation beam is projected onto a target portion C at one time (i.e. a single static exposure). The substrate table WT is then shifted in the X and/or Y direction so that a different target portion C can be exposed. In step mode, the maximum size of the exposure field limits the size of the target portion C imaged in a single static exposure.
2. In scan mode, the support structure MT and the substrate table WT are scanned synchronously while a pattern imparted to the radiation beam is projected onto a target portion C (i.e. a single dynamic exposure). The velocity and direction of the substrate table WT relative to the support structure MT may be determined by the (de-)magnification and image reversal characteristics of the projection system PS. In scan mode, the maximum size of the exposure field limits the width (in the non-scanning direction) of the target portion in a single dynamic exposure, whereas the length of the scanning motion determines the height (in the scanning direction) of the target portion.
3. In another mode, the support structure MT is kept essentially stationary holding a programmable patterning structure, and the substrate table WT is moved or scanned while a pattern imparted to the radiation beam is projected onto a target portion C. In this mode, generally a pulsed radiation source is employed and the programmable patterning structure is updated as required after each movement of the substrate table WT or in between successive radiation pulses during a scan. This mode of operation can be readily applied to maskless lithography that utilizes programmable patterning structure, such as a programmable mirror array of a type as referred to above.
Combinations and/or variations on the above described modes of use or entirely different modes of use may also be employed.
In an embodiment, the apparatus includes one or more interferometer systems IF, as well as one or more gas showers arranged to supply laminar gas to at least part of an optical path OP of the interferometer system IF. This is depicted schematically in
As
In a conventional apparatus, a gas shower extends 101 next to the apparatus component 10, to supply a respective flow of conditioned gas to the interior space. The conditioned gas may be, for example, an inert gas, a gas mixture, air, or a different gas. The conditioned gas may be ultra clean air of purity class 1. The temperature of the gas may be relatively stable, for example, stable within 0.10 degrees C. or stable within 0.0010 degrees C. It is known from the prior art how such a thermally stable gas may be provided.
In
The gas shower system may be used to condition the paths OP of the interferometer beams to 0.001 degrees C. stability. Because of the location of the apparatus component 10, the gas shower 101 may not condition the optical paths OP from above (in
In the embodiment of
In the present embodiment, the apparatus component is provided with a first side 13 and a second side 14. The second side 14 of the component 10 substantially faces away from the first side 13. Also, the apparatus component 10 may comprise a third side 15 extending between the first and second sides 13, 14. For example, in an embodiment, the third side 15 comprises a mirror surface, to reflect one or more positioning beams (not depicted). For example, the apparatus component 10 may have a substantially rectangular or square cross-section, or be shaped differently.
As is shown, the gas shower system 1, 2 is configured to supply the first gas flow g1 at least partially towards the first side 13 of the apparatus component 10 and to supply the second gas flow g2 at least partially towards the second side 14 of the apparatus component 10. Particularly, opposite sides 3, 4 of the gas showers 1, 2 are configured to supply the first and second gas flows. Also, in the present embodiment, at least part of the first and second gas flows g1, g2 meet each other in front of the third side 15 of the apparatus component 10 during use, particularly to condition the optical paths OP. Other parts of the gas flows g1, g2 may be directed in an opposite direction, for example along the apparatus component 10, away from the optical paths OP, as is clearly depicted in
In the present embodiment, the first and second gas showers 1, 2 of the gas shower system may be arranged such, that the first gas flow g1 and the second gas flow g2 are at least partly directed toward each other, as is clearly visible in
In an assembly, the two gas showers 1, 2 may be spaced-apart from each other. Each of the gas showers 1, 2 may be spaced-apart from the apparatus component 10. In an embodiment, the gas showers 1, 2 extend between a projection system PS and an interferometer “block” IF (see
In
Each of the gas showers 1, 2 may be arranged and configured in various ways. For example, each gas shower 1, 2 may include one or more suitable gas outlet sides 3, 4 to disperse laminar gas flows g1, g2 into the apparatus. Each of the outlet sides 3, 4 may be provided, for example, with a porous material, a suitable gas disperser, monofilament cloth, one or more sheets having gas apertures, or a different gas distributor. Each gas shower outlet sides 3, 4 may include one or more layers of one or more materials. The outlet sides 3, 4 may be, or provide, a wall or wall part of an upstream gas distribution chamber of the respective gas showers 1, 2. In the present embodiment of
In an embodiment, each gas shower 1, 2, or respective gas outlet side 3, 4, is configured to generate a substantially uniform laminar gas flow g from gas that is being supplied to the gas shower during use. One or more gas sources to supply gas to the gas showers 3, 4 are not depicted. In the present embodiment of
In an embodiment, the opposite gas outlet sides 3, 4 of the first and second gas showers 1, 2 may be arranged to direct the first gas flow g1 and the second gas flow g2 at least towards each other, as in the present embodiment, and towards the first and second sides 13, 14 of the component 10. For example, in the present embodiment, the opposite gas outlet sides 3, 4 of the gas showers 1, 2 are arranged respectively to supply diverging gas flows g1, g2 to the interior space. Herein, each gas flow g1, g2 as such diverges at least partly. For example, each gas flow g1, g2 may be diverging when viewed in a virtual plane which is perpendicular to respective optical paths OP, for example a XZ or YZ plane. Each diverging gas flow g1, g2 can reach a respective side 13, 14 of the apparatus component 10, as well as the optical paths OP that are located near that apparatus component 10. To provide diverging gas flows g1, g2, the opposite sides 3, 4 of the first and second gas shower may simply be curved surfaces, such as convex surfaces as shown in
In an embodiment, the first and second gas showers 1, 2 may be configured to induce one or more flow wakes (or underpressure) in the interior space. In the present embodiment of
During use of the embodiment of
In the present
The respective gas showers 1′, 2′ may be constructed in various ways to provide the respective inclined gas flows. For example, each gas shower 1′, 2′ may comprise a gas outlet side 3′, 4′, comprising a plurality of inclined gas passages, as is shown in detail in
In an embodiment, each gas outlet side 3′, 4′ may comprise a thin metal or alloy sheet 8 having a plurality of passages 9, each of the passages 9 extending obliquely with respect to an outer surface of the metal sheet. Also, a plurality of the passages may extend substantially parallel with respect to each other.
In an embodiment, a thickness t of the sheet 8 (measured in a Y direction in
The gas passages 9 may have various diameters or dimensions. A diameter or width D of each of the passages 9 may be, for example, smaller than about 0.2 mm. For example, the diameter or width may be smaller than about 0.1 mm. Good results may be obtained when the diameter or width of each of the passages is about 0.08 mm.
In an embodiment, the lithographic apparatus may include a movable substrate support WT. For example, in the embodiment of
In the embodiment of
In the embodiment of
The opposite gas outlet sides 3, 4, 203, 204 may be arranged in various other ways. For example, both of the opposite gas outlet sides may be flat sides, or concave sides. One of the gas outlet sides may be substantially flat or concave (as in
Also, the embodiment of
The embodiments shown in
The gas showers described herein may provide two gas supply areas, one on each side 13, 14 of the apparatus component 10. As follows from the above, the surface or gas outlet side of each supply part of each gas shower may be covered or provided with a mono filament cloth to generate a uniform laminar ‘down’ flow of a certain velocity. The gas outlet sides of the gas showers may, for example, be positioned at an inclined angle towards the apparatus component 10, such that potential mixing zones of low momentum and unconditioned gas may be located outside interferometer paths OP, and such that a flow wake FW under the apparatus component 10 is minimal. Slight amounts of unconditioned gas may be sucked into this flow wake FW, particularly at outer ends of the apparatus component 10, for example near an interferometer part IF and near the projection system PS (see
In an embodiment, near the projection system PS, a top surface of the substrate support may be configured to induce a pressure stagnation point PSP, for example in cooperation with lateral end parts of the gas showers 1, 2. Such a pressure stagnation point PSP may avoid or reduce entrainment of unconditioned gas into interferometer paths OP. This is schematically depicted in
In an embodiment, the first and second gas showers may be separate gas shower units, or be parts of one gas shower unit. The first and second gas showers may be part of the same gas shower system, or of different gas shower systems. Together, the first and second gas showers may form a gas shower assembly. The first and second gas showers may be integrated with each other, connected to each other, be connected to the same gas supply or be connected to different gas supplies. The first and second gas showers may also be configured differently. One or more further gas showers may be provided, as will be clear to the skilled person.
Although specific reference may be made in this text to the use of lithographic apparatus in the manufacture of ICs, it should be understood that the lithographic apparatus described herein may have other applications, such as the manufacture of integrated optical systems, guidance and detection patterns for magnetic domain memories, flat-panel displays, liquid-crystal displays (LCDs), thin-film magnetic heads, etc. The skilled artisan will appreciate that, in the context of such alternative applications, any use of the terms “wafer” or “die” herein may be considered as synonymous with the more general terms “substrate” or “target portion”, respectively. The substrate referred to herein may be processed, before or after exposure, in for example a track (a tool that typically applies a layer of resist to a substrate and develops the exposed resist), a metrology tool and/or an inspection tool. Where applicable, the disclosure herein may be applied to such and other substrate processing tools. Further, the substrate may be processed more than once, for example in order to create a multi-layer IC, so that the term substrate used herein may also refer to a substrate that already contains multiple processed layers.
Although specific reference may have been made above to the use of embodiments of the invention in the context of optical lithography, it will be appreciated that the invention may be used in other applications, for example imprint lithography, and where the context allows, is not limited to optical lithography. In imprint lithography a topography in a patterning structure defines the pattern created on a substrate. The topography of the patterning structure may be pressed into a layer of resist supplied to the substrate whereupon the resist is cured by applying electromagnetic radiation, heat, pressure or a combination thereof. The patterning structure is moved out of the resist leaving a pattern in it after the resist is cured.
The terms “radiation” and “beam” used herein encompass all types of electromagnetic radiation, including ultraviolet (UV) radiation (e.g. having a wavelength of or about 365, 355, 248, 193, 157 or 126 nm) and extreme ultra-violet (EUV) radiation (e.g. having a wavelength in the range of 5-20 nm), as well as particle beams, such as ion beams or electron beams.
The term “lens”, where the context allows, may refer to any one or combination of various types of optical components, including refractive, reflective, magnetic, electromagnetic and electrostatic optical components.
While specific embodiments of the invention have been described above, it will be appreciated that the invention may be practiced otherwise than as described. For example, the invention may take the form of a computer program containing one or more sequences of machine-readable instructions describing a method as disclosed above, or a data storage medium (e.g. semiconductor memory, magnetic or optical disk) having such a computer program stored therein.
The descriptions above are intended to be illustrative, not limiting. Thus, it will be apparent to one skilled in the art that modifications may be made to the invention as described without departing from the scope of the claims set out below.
Van Der Ham, Ronald, Roset, Niek Jacobus Johannes, Van Empel, Tjarko Adriaan Rudolf
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