An electron generating device extracts electrons, through an electron sheath, from plasma produced using RF fields. The electron sheath is located near a grounded ring at one end of a negatively biased conducting surface, which is normally a cylinder. Extracted electrons pass through the grounded ring in the presence of a steady state axial magnetic field. Sufficiently large magnetic fields and/or RF power into the plasma allow for helicon plasma generation. The ion loss area is sufficiently large compared to the electron loss area to allow for total non-ambipolar extraction of all electrons leaving the plasma. Voids in the negatively-biased conducting surface allow the time-varying magnetic fields provided by the antenna to inductively couple to the plasma within the conducting surface. The conducting surface acts as a Faraday shield, which reduces any time-varying electric fields from entering the conductive surface, i.e. blocks capacitive coupling between the antenna and the plasma.
|
17. A method for generating a beam of electrons, comprising:
supplying an amount of feed gas to into a plasma region of a first chamber, the first chamber enclosing the plasma region, a conductive surface provided within the first chamber around the plasma region and an electron extraction ring provided at one end of the first chamber, a generally constant solenoidal magnetic field provided to the first chamber, a first potential applied to the electron extraction ring, a relatively-negative second potential applied to the conductive surface;
applying a time-varying radio-frequency signal to at least one antenna provided around the first chamber;
generating time varying radio-frequency electric and magnetic fields based on the time-varying radio-frequency signal applied to the at least one antenna;
ionizing at least some of the supplied amount of feed gas to form a plasma within the plasma region, the plasma containing free electrons and free positively-charged ions;
attracting at least some of the free electrons to the electron extraction ring through an electron sheath;
attracting at least some of the free positively-charged ions to the conductive surface through an ion sheath;
converting the attracted positively-charged ions back into neutral feed gas particles, the neutral feed gas particles returning to the plasma region, where they are available to be re-ionized into the plasma.
1. An electron beam generating device, comprising:
a first chamber usable to contain a feed gas and a plasma formed using the feed gas, the first chamber having a first end wall having an opening through which the feed gas is able to exit the first chamber;
a gas supply tube usable to supply the feed gas into the first chamber, the gas supply tube extending at least into the first chamber;
a conductive surface provided within the first chamber, the conductive surface electrically connected to an at least relatively negative potential source that is usable to place an at least relatively negative potential onto the conductive surface;
at least one radio-frequency antenna placed around the first chamber and usable to ionize the feed gas within the first chamber to form a plasma; and
an electron extraction ring provided adjacent to the first end wall of the first chamber and relative to the opening in the first end wall, the electron extraction ring electrically connected to a reference ground potential source and having an electron extraction aperture, wherein:
the potential placed on the conductive surface is negative relative to the plasma and the electron extraction ring;
at least an electron sheath forms within the first chamber relative to the electron extraction ring, the electron sheath permitting electrons and neutral particles to pass out of the plasma toward the electron extraction ring and preventing positively-charged ions from moving towards the electron extraction ring; and
the electron extraction ring extracts and outputs at least a beam of electrons from the electron beam generating device.
16. An electron beam generating device, comprising:
a first chamber usable to contain a feed gas and a plasma formed using the feed gas, the first chamber having a first end wall having an opening through which the feed gas is able to exit the first chamber;
a conductive chamber provided within the first chamber, the conductive chamber having at least a circumferential wall than extends circumferentially within the first chamber, a first end wall and an electron extraction end wall, an aperture formed in the electron extraction end wall that allows electrons and neutral particles to exit the conductive chamber, the conductive chamber electrically connected to an at least relatively negative potential source that is usable to place an at least relatively negative potential onto the conductive chamber;
a gas supply tube usable to supply the feed gas into the conductive chamber, the gas supply tube extending into the first chamber and the conductive chamber;
at least one radio-frequency antenna placed around the first chamber and usable to ionize the feed gas within the conductive chamber into the plasma; and
a conductive end wall of the first chamber provided adjacent to the extraction end wall of the conductive chamber, the conductive end wall having a second aperture located relative to the aperture in the extraction end wall, wherein:
at least an electron sheath forms within the first chamber relative to the aperture provided in the extraction end wall, the electron sheath permitting electrons and neutral particles to pass out of the plasma toward the aperture provided in the extraction end wall and preventing positively-charged ions from moving towards the aperture provided in the extraction end wall; and
the extraction end wall extracts and outputs at least a beam of electrons from the electron beam generating device.
2. The electron beam generating device of
3. The electron beam generating device of
4. The electron beam generating device of
5. The electron beam generating device of
6. The electron beam generating device of
7. The electron beam generating device of
8. The electron beam generating device of
9. The electron beam generating device of
10. The electron beam generating device of
11. The electron beam generating device of
12. The electron beam generating device of
a time-varying electric signal is applied to the at least one radio-frequency antenna to generate time-varying electric and magnetic fields around the at least one radio-frequency antenna; and
a strength of the solenoidal magnetic field generated by the at least one magnet and a power of the time-varying magnetic field generated by the at least one radio-frequency antenna are sufficient to excite helicon waves within the plasma formed in the first chamber.
13. The electron beam generating device of
14. The electron beam generating device of
15. The electron beam generating device of
|
This application is a continuation of U.S. patent application Ser. No. 11/427,273, now U.S. Pat. No. 7,498,592 filed Jun. 28, 2006, the disclosure of which is incorporated herein by reference in its entirety.
This invention was made with United States government support awarded by the following agencies:
DOE DE-FG02-97ER5
NASA NNC04GA82G and T302-9700
The United States government has certain rights in this invention.
1. Field of the Invention
This invention is directed to systems, methods and devices for generating an electron beam.
2. Related Art
Electron beam sources are widely used in a variety of applications. Electron beam generators are used both as sources for the electron beams themselves, as charge neutralizers for charged ion beams, to produce protective thermal spacecraft coatings, to form plasma-assisted thin films, and to deposit optical coatings, such as, for example, for large mirrors, in forming metallized packaging films and in electron beam evaporation, electron beam surface modification, thin film growth, plasma-assisted chemical vapor deposition, plasma vapor deposition, electron beam curing, waste handling, and electron beam reactive deposition.
Ion beams are used both in the semiconductor manufacturing industry and many other industries, as well as in many satellites and other spacecraft, and other applications. In such satellites and other spacecraft, ion beams are used as thrusters to maneuver the satellites or other spacecraft. In the semiconductor industry, ion beams are used for a variety of purposes, including etching, ion implantation, doping, sputtering, and the like.
In both semiconductor manufacturing and spacecraft/satellite maneuvering embodiments, it is highly desirable, if not absolutely necessary, that the plasma stream, i.e., the ion beam, be electrically neutral. The ion beams are typically generated by stripping electrons off of atoms of the desired material to create positively-charged ions. These positively-charged ions are accelerated by an electric field and formed into a beam. Typically, the positively-charged ions originate in a plasma.
However, due to space-charge limitations within the ion beams, the charged ions in the ion beams tend not to stay tightly packed in the beam. Rather, the ion beam tends to “blow apart” due to the repulsive force between the similarly-charged ions. Furthermore, positively-charged ion beams are attracted to negatively-charged surfaces. For example, in the spacecraft/satellite embodiments, if the beam remains positively-charged, two problems arise. First, the spacecraft/satellite itself becomes negatively charged when the positive charge is emitted. Second, because the ion beam is positively charged, it becomes attracted to the negatively-charged spacecraft/satellite, and thus does not travel in a straight line away from the spacecraft or satellite, or, in a worst-case leave the spacecraft environment at all. Rather, the positively-charged ions move within the electric field formed by the negatively-charged spacecraft/satellite and return toward the spacecraft/satellite due to the electrostatic attraction between the negatively-charged spacecraft/satellite and the positively-charged ions. As a result, a positively-charged ion beam does not provide the proper thrust to appropriately maneuver the satellite or spacecraft.
Typically, to avoid these problems, the positively-charged ion beam is neutralized shortly after it leaves the ion beam generating device by combining the positively-charged ion beam with a beam of (negatively-charged) electrons. The combination of the electrons and positively-charged ions renders the net plasma stream neutrally charged. However, because of the relatively light weight of the electrons, relative to the ions, the electrons do not significantly affect the thrust provided by the ion beam. Moreover, by extracting equal currents of ions and electrons, no net charge accumulates in and/or on the spacecraft/satellite. Because the ions in the plasma stream are now balanced by electrons, a net electric field does not arise on the spacecraft or satellite. Thus, the plasma stream moves in a straight line away from the satellite or spacecraft, providing the desired thrust.
Conventionally, electron beams associated with spacecraft are generated by hollow cathodes. However, hollow cathodes are problematic for a number of reasons. First, as the hollow cathodes are used to generate the desired electron beam, they are slowly consumed. Typical maximum lifetimes for commercial hollow electrodes are on the order of only three to four years. Additionally, the present generation of hollow cathodes employ barium oxide-tungsten (BaO—W) inserts as their emitting surface. However, this emitting surface deteriorates over time. Once the hollow cathode becomes inoperable, it is no longer possible to use the electron generating device. Additionally, hollow cathodes are difficult to ignite, either initially or if they should go out during use, and can become contaminated, thus reducing their efficiency.
One proposed solution for this limited lifetime is to provide multiple hollow-cathode electron generating devices and/or to provide multiple hollow cathodes within a single hollow-cathode electron generating device. However, these solutions are problematic for a number of reasons. First, for weight-limited devices such as satellites and spacecraft, providing two electron generating devices consumes valuable and limited weight and space within the spacecraft/satellite. Second, even when two such hollow-cathode electron generating devices are provided, it has not always been easy to ignite the hollow cathode in the second hollow-cathode electron generating device. This is also true when multiple hollow cathodes are provided in the same hollow-cathode electron generating device.
While hollow cathode-electron generating devices have limited useful lifespans and the other problems outlined above, they are generally well-understood devices that reliably provide electron beams over their lifetimes. Any competing technology should be at least as useful, reliable, and efficient or long-lived as hollow cathode devices to be commercially successful.
This invention provides an electrode-less electron beam generating device.
This invention separately provides systems and methods for providing non-ambipolar electron flow in an electron generating device.
This invention separately provides systems and methods for providing total non-ambipolar electron flow in an electron generating device.
This invention separately provides systems and methods for creating an electron-generating plasma using magnetic induction to generate currents in the plasma.
This invention separately provides systems and methods for creating an electron-generating plasma using helicon-wave induction fields to generate currents in the plasma.
This invention separately provides systems and methods for improving electron extraction in an electron beam generating device.
This invention separately provides systems and methods for gridless non-ambipolar electron extraction of electrons from an electron beam generating device.
This invention separately provides systems and methods for extracting electrons from an electron beam generating device through an electron sheath.
In various exemplary embodiments of systems, methods and/or devices according to this invention, an electron beam generating device produces electron beams from a plasma, where the plasma is produced using radio-frequency (RF) fields and electron extraction occurs through electron sheaths. In various exemplary embodiments, an ion loss area is selected based on an electron extraction area, the ion mass and the electron mass. In various exemplary embodiments, the ion loss area is sufficiently large to allow for total non-ambipolar electron extraction. In various exemplary embodiments, the ions are lost to a negatively-biased conducting surface. In various exemplary embodiments, the negatively-biased conducting surface is a cylinder. In various exemplary embodiments, electrons are extracted through a grounded ring that is mounted in or behind an insulating boundary provided at one end of the conducting cylinder. In various exemplary embodiments, the electrons extracted from the plasma pass to or through the grounded ring, while the ions are lost to the negatively-biased conducting surface. In various exemplary embodiments, an axial magnetic field that is parallel to the axis of the ring is used to enhance electron extraction through the ring. In various exemplary embodiments, the axial magnetic field also reduces the electron current to the ring itself.
In various exemplary embodiments, an antenna located outside of the negatively-biased conducting surface generates a varying RF electromagnetic field around the electron beam generating device. The antenna can be capacitively coupled to the plasma, inductively driving currents in the plasma or inductively exciting helicon waves, provided in the negatively-biased conducting cylinder depending on the structure of the device and the plasma density. In various exemplary embodiments, slots or other voids in a negatively-biased conducting cylinder to allow the time-varying magnetic fields provided by the antenna to extend into the interior of the negatively-biased conducting cylinder to inductively couple to the gas within the negatively-biased conducting cylinder. In various exemplary embodiments, the negatively-biased conducting cylinder acts as Faraday shield to reduce, and possibly eliminate, any capacitive coupling of electric fields between the antenna and the plasma. In various exemplary embodiments, a simple antenna is used In various other exemplary embodiments, the antenna is configured to allow inductive or helicon coupling to the plasma.
In various exemplary embodiments, a non-conducting closed surface is placed around the negatively-biased conducting cylinder to confine the plasma and a source gas. In various exemplary embodiments, electron extraction aperture dimensions of the grounded electron extraction ring and the gas flow rate into the chamber determine the appropriate neutral gas pressure within the electron beam generating device. In various exemplary embodiments, any neutral gas can be used.
In various exemplary embodiments, the device can be operated with a variety of non-time-varying (DC) magnetic field configurations. Given sufficient RF power, such steady-state or DC magnetic fields allow helicon waves to be excited within the plasma in the interior of the electron beam generating device. Helicon waves allow the extracted electron current to be increased due to increases in the plasma density. In various exemplary embodiments, the steady-state or DC magnetic fields are aligned axially. In various exemplary embodiments, the steady-state or DC axial magnetic fields are produced by permanent magnets and/or by electromagnets.
These and other features and advantages of various exemplary embodiments of systems and methods according to this invention are described in, or are apparent from, the following detailed descriptions of various exemplary embodiments of various devices, structures and/or methods according to this invention.
Various exemplary embodiments of the systems and methods according to this invention will be described in detail, with reference to the following figures, wherein:
Ion and Hall thrusters use beams of positively-charged ions for propulsion. As discussed above, electrons or negative ions should be introduced into the positively-charged ion beam as it leaves the thruster. This is done to prevent the spacecraft from becoming negatively charged and thus attracting the emitted positively-charged ion beam.
Traditionally, hollow cathodes have been used as neutralizing sources because of their high electron current density and relatively low power requirements. However, the operational lifetime of such hollow cathodes is limited by cathode deterioration, cathode contamination, and other effects. This limited operational lifetime for hollow cathodes renders hollow cathodes less suitable for sustained use or where maintaining such hollow cathodes is difficult or impossible.
Longer duration spacecraft missions that use ion propulsion, such as the proposed Jupiter Icy Moons Mission (JIMO), will take 6-10 years for the total orbital transfer time. While using ion propulsion for such longer duration missions is very beneficial relative to impulsive chemical rocket burns, due to the savings in fuel mass and time, the lifetime for some operating components for ion propulsion, such as the hollow cathodes, may be limited to no more than 3 to 4 years. The hollow cathode neutralizer and plasma sources that were used for the highly successful Deep space 1 and SMART-1 missions were limited to no more than 3 to 4 years of operational lifetime due to significant erosion, sputtering and re-deposition of material within the keeper region and surrounding area of such devices.
The inventors have determined that radio-frequency (RF) plasmas are attractive as sources for neutralizing charge carriers for electric propulsion devices, such as Hall and ion thrusters. Such radio-frequency plasmas allow for an electrode-less design and provide high efficiency and long operational lifetimes. Radio-frequency plasma sources provide an alternative neutralizing approach that does not consume electrode material, while providing electrons, allowing for a longer operational lifetime.
There are a variety of radio-frequency plasma sources, including capacitive and inductive sources, that operate without magnetic fields, and electron cyclotron resonance (ECR) sources and helicon sources that require axial magnetic fields. Helicon sources can produce the highest plasma densities, which can be greater than 1013/cm3, for a given radio-frequency power. However, helicon sources also require magnetic fields. Lower RF power emitted by the excitation antenna into the plasma requires higher magnetic field strengths. For example, a 10 W radio-frequency signal typically requires a 2000 Gauss magnetic field. In contrast, lower magnetic field strengths require higher RF power into the plasma. For example, a 300 Gauss magnetic field typically requires the excitation antenna to emit 600 W. If sufficient power is not available, helicon sources will operate as inductive sources. Inductively coupled plasmas can achieve significant plasma densities, such as, for example, 1010/cm3 to 1012/cm3 and allow for a large total electron extraction current.
As shown in
As shown in
It should be appreciated that, in various exemplary embodiments, the non-conductive exterior chamber 110 is cylindrical in cross section. Accordingly, in such exemplary embodiments, the at least one steady-state magnet 120 has a corresponding cylindrical central opening through which the non-conductive exterior chamber 110 extends. However, it should be appreciated that, in various other exemplary embodiments, the non-conductive exterior chamber 110 can have any desired cross-sectional shape that defines a simple closed curve, such as a circle, a regular or irregular polygon or the like. Typically, the one or more steady-state magnets 120 will be placed around the non-conductive exterior chamber 110 such that the central passageway formed within the at least one steady-state magnet 120 will closely follow the surface of the non-conductive exterior chamber 110.
The one or more steady-state magnets 120 generate a generally solenoidal magnetic field that extends along the axial direction of the non-conductive exterior chamber 110. In various exemplary embodiments, such as that shown in
As shown in
where:
e is the electron charge;
B is the magnetic field strength; and
me is the electron mass.
As shown in
However, it should be appreciated that, in some exemplary embodiments, it may be desirable to allow some capacitive coupling to occur between the antenna 140 and the plasma 108. Such capacitive coupling can be used to ignite the plasma. It should further be appreciated that any other known or later developed ignition device or structure that is usable to ignite the plasma 108 can be used. In such exemplary embodiments, capacitive coupling between the antenna 140 and the plasma 108 can be substantially eliminated, and, potentially, completely eliminated.
As shown in
As shown in
The central aperture, hole or passageway 152 in the electron extraction ring 150 allows the feed gas 102 and the electrons obtained from the plasma 108 to be emitted from the electron beam generating device 100 as the electron beam 104. As shown in
The conductive ion-collection surface 130 acts as a radial boundary for the plasma 108 and acts as the location for the formation of an ion sheath, shown in
The electron extraction ring 150 creates an axial boundary condition, limiting the ability of the ions and the feed gas 102 to exit the interior space 106 through the central aperture, hole or passageway 152. In various exemplary embodiments, the electron extraction ring 150 creates a potential reference for the plasma 108 somewhere near the potential of the plasma 108. An electron loss area Ae is established within the aperture 152 of the electron extraction ring 150. The electron loss area Ae can be as large as the area of the aperture 152. However, an electron sheath usually forms near the extraction ring 150. As indicated above, the electron extraction ring 150 can extend through the extraction end wall 118. In various exemplary embodiments, the electron extraction ring 150 extends into the interior space 106 from the extraction end wall 118 within the conductive ion-collection surface 130.
The plasma 108 is formed by supplying the feed gas 102 from a mass flow controller (not shown) to at least the interior space 106 through the gas supply tube 116. In various exemplary embodiments, the feed gas 102 is argon (Ar), xenon (Xe), or other noble gas. However, it should be appreciated that, in various other exemplary embodiments, the feed gas 102 can be any desired elemental gas, gas mixture or the like. In various exemplary embodiments, the feed gas 102 flows from the gas supply tube 116 into a source, or plasma, region of the interior space 106 where the feed gas 102 is excited by the radio-frequency antenna 140 to form the plasma 108. In the exemplary embodiment shown in
This solenoidal magnetic field ensures that the electrons follow the magnetic field lines that pass through the central aperture, hole or passageway 152, i.e., the exit region, of the electron extraction ring 150. It should be appreciated that, for spacecraft/satellites and other space and/or weight limited structures, permanent magnets are relatively more useful than electromagnets for the electron beam generating device 100, as they do not require a power source for continued operation (in contrast to electromagnets) and are relatively light weight compared to the DC power source that would be required by electromagnets. It should be appreciated that electromagnets provide an option where a magnetic cusp does not exist. Electromagnets can better adjust the strength of the magnetic field, which may increase the amount of extractable electron current.
It should be appreciated that, in general, electron or ion sheaths are non-neutral regions that usually form at plasma boundaries to balance losses of electrons and ions born by ionization within the plasma. An electron sheath is a non-neutral region at the boundary of a plasma that only contains electrons for potential steps much greater than Te/e (the plasma temperature/electron charge ratio), formed in order to conserve particle flux for the plasma as a whole. An electron sheath exhibits a positive potential step with respect to the bulk plasma potential. Normally, electron sheaths can exist near positively-biased Langmuir probes, which extract small electron currents from the plasma. However, electron beam generating devices according to this invention can use an electron sheath to extract a significant electron current from the plasma. Electron sheaths are normally only present 1) near small probes when such small probes are biased more positively than the plasma potential or 2) at electron emitting surfaces in weakly-collisional, low-pressure plasmas. The inventors have determined, experimentally, that an electron sheath can collect all electrons produced by ionization if sufficient ion loss area Ai is provided for the ions, according to Eq. (4), below.
If all of the boundaries are identical, then ambipolar flow of the electrons and ions from the plasma is obtained. Ambipolar flow refers to both the ions and electrons flowing and reaching a physical boundary together. In such ambipolar flows, the ion loss and the electron loss are balanced at each point on the boundary. In contrast, in non-ambipolar flow, the particles flow from the plasma to the plasma-sheath boundary together, but they do not leave the other end of the sheath, i.e., traverse the sheath, with the same current.
In contrast, if several different (i.e., non-identical) boundaries are present, then at least some non-ambipolar flow is created. Such non-ambipolar flow implies that, at least some points along the boundary, the electron and ion flows do not balance. That is, in such non-ambipolar flow, at some points along the boundary, the electron flux is greater than the ion flux. An electron sheath may exist at such points. In contrast, at various other boundary points, the ion flux exceeds the electron flux. An ion sheath exists at such points. It should be appreciated that an ion sheath will also exist for normal ambipolar flow.
With non-ambipolar flow, while the electron and ion fluxes do not balance locally, they continue to balance overall. If there are no points within the plasma boundary where both electrons and ions flow at the same time, the flow within the plasma can be referred to as total non-ambipolar flow. By insuring total non-ambipolar flow, all of the electrons in the plasma remain available for extraction from the ion beam generating device.
As shown in
It should be appreciated that, in various other exemplary embodiments, one or more appropriately-sized gaps can be provided between the outer surface of the conductive end cap 138 and the inner surface of the insulating member or plate 156 and/or the inner surface of the conductive end cap 154 and the outer surface of the insulating member or plate 157. In still other exemplary embodiments, the insulating member or plate 156 can be removed completely, with an appropriately-sized gap provided between the end caps 138 and 154. This gap allows the two conductive end caps 138 and 154 to be at different potentials.
It should be appreciated that each of the exemplary embodiments discussed above with respect to
To maintain steady-state operation, the amount of electron loss from the source plasma 108 must be balanced by an equal amount of ion loss from the source plasma 108. Because electrons and ions are born at an equal rate within the plasma 108 created by the time-varying radio-frequency signal applied to the radio-frequency antenna 140, it is desirable to provide an efficient loss mechanism for the positively-charged ions, so that an equal amount of electron current can be extracted from the plasma 108. It should be appreciated that ion and electron losses, gas utilization rates, plasma density and plasma potential effects all affect the total amount of electron current that can be extracted from the electron beam generating device 100. It should be appreciated that, in general, the electron sheath 136 can extract almost all of the random electron current from the plasma 108 that is incident upon the electron sheath 136. In particular, the random electron flux J0e, directed towards the electron sheath 136 in a weakly magnetized plasma, at the edge of the electron sheath 136 is:
where:
n0e is the electron density in the plasma;
e is the electron charge; equal to 1.60217646×10−19 Coulombs;
αe is an electron factor that takes into account the drop in electron density associated with potential dips preceding the electron sheath;
Te is the temperature of the plasma electrons, measured in electron volts (eV); and
me is the electron mass.
At the same time, the ion flux J0i at the ion sheath edge is:
where:
n0i is the ion density and should be equivalent to the electron density n0e for singly-ionized ions;
αi is an ion factor that takes into account the drop in ion density in the presheath near the conductive ion-collection surface.
Te is the temperature of the plasma electrons measured in electron volts; and
mi is the ion mass.
For total non-ambipolar flow, the ratio of the electron loss area to the ion loss area is found by setting Ie=Ii, where Ic=J0eAe and Ii=J0iAi, and the electron flux J0e to the ion flux J0i associated with electrons created by ionization can be obtained by combining Eq. (1) and Eq. (2) and is approximately equal to:
A limit to the existence of an electron sheath is provided by the condition that the ion loss area Ai be balanced by the electron loss area Ae it should be appreciated that, when the ion loss area is too small, the electron beam device 100 will still work, but this reduced ion loss area Ai reduces the amount of electron current that can be produced by forming a plasma potential dip preceding the electron sheath, as discussed below. Assuming all of the electrons are lost at the electron sheath 136, then:
assuming the electrons are radially confined. It should be appreciated that an electron sheath will form without a potential dip if:
However, an electron sheath will form with a potential dip in front of it if:
It should be appreciated that, for large electron loss areas Ae, the electron sheath 136 is no longer a viable solution. For such sufficiently large electron loss areas Ae, only a plasma potential more positive than the grounded electrode potential, combined with an ion sheath 134, can provide the necessary balance of electron and ion losses.
It should be appreciated that the net electron loss in traditional devices, such as hollow cathodes, equals the sum of the electrons born by ionization within the plasma, and electrons injected into the plasma by thermionic emission at cathodes, secondary electron emission and the like. However, electron loss within the electron beam generating device 100 only comes from electrons that are born by ionization and perhaps secondary emission. It should also be appreciated that if the electron loss area, Ae, is too large, as defined in Eq. (6), then the electron sheath will have a potential dip that reduces the extracted electron current to balance that of the extracted ion current in the device 100. As outlined above, such potential dips occur when the electron extraction area Ae is too large, i.e., the relationship defined in Eq. (6).
In one exemplary electron beam generating device built according to the above-outlined discussion of various exemplary embodiments of electron beam generating devices according to this invention, a cylindrical pyrex chamber has a diameter of 7.5 centimeters and a length of 60 centimeters and was placed within ferrite permanent magnets. A hollow graphite cylinder 7.5 centimeters in diameter and 19 centimeters long was placed within the pyrex chamber and biased at a value between −5V to about −200V compared to the potential on the extraction ring. An electrically grounded 1.25 centimeter diameter graphite ring was placed inside an insulating boron nitride disc and mounted in one end of the cylindrical pyrex chamber. The hollow graphite cylinder was placed adjacent to the electron extraction ring. A single-turn, 0.25-inch-diameter, water-cooled copper pipe was placed, as the radio-frequency antenna, around the pyrex chamber toward the extraction end of the pyrex chamber. In this exemplary embodiment, the grounded electron extraction ring experienced a magnetic field of 72 Gauss.
In this exemplary operating electron beam generating device, ions are lost to the 7.5 centimeter diameter graphite cylinder, which has an ion loss area of 425 cm2. In contrast, the electron loss area Ae is restricted to the central aperture, hole or passageway in the 1.25 centimeter-diameter graphite extraction ring, which has an area of 1.23 cm2. The 1.23 cm2 electron loss area Ae implies that an ion loss area of at least about 350 cm2 for argon (Ar) and at least about 640 cm2 for xenon (Xe) (assuming the electron and ion factors have values of αe˜1, and αi˜0.5) would be needed. When the plasma in this exemplary operating electron beam generating device is operated with an argon feed gas and a plasma density of 5×1012/cm3, a 15 A electron current can be extracted through the central aperture, hole or passageway having an electron loss area of 1.23 cm2. The 15 A current was extracted with the following parameters: 1000 W RF power at a frequency of 13.56 MHz, −50V bias on the ion collection cylinder, 0V bias (grounded) on the extraction ring, an electron loss area of 1.23 cm2, and an Ar neutral gas flow rate of 15 sccm with an aluminum ion-collection cylinder. 10 A electron extraction current was obtained with a graphite ion-collection cylinder with somewhat different dimensions.
A positively-charged ion born within an electron beam generating device according to this invention is transported from the bulk plasma through a presheath and then to the ion sheath, where it contacts the conductive ion-collection surface and picks up an electron, converting the positively-charged ion into a neutral atom. The neutral atom is then free to travel back into the bulk plasma within the plasma chamber portion to be re-ionized. At any one time, only a small fraction, on the order of about 1 atom out of 1000, of the neutral gas is ionized. However, as described above, each neutral atom may be recycled many times, such as, for example, up to 20 times or more, before that neutral atom finally exits the electron beam generating device according to this invention.
Typically, the neutral atoms will exit through the aperture in the electron extraction ring. However, in contrast to the neutral atoms, the positively-charged ions see a potential barrier at the aperture in the electron extraction ring of the electron beam generating device so that only neutrals and electrons can leave the interior chamber. Reusing the neutral gas atoms in this way is possible because the positively-charged ions, in contrast to ion thrusters, are not being extracted through the exit aperture. That is, when extracting ions, as in an ion thruster, the ion outflow rate can never exceed the neutral inflow rate. However, because the electron beam generating device according to this invention is an electron source that extracts electrons, the electron outflow rate can be many times the neutral gas inflow rate. In general, the ratio of extracted electrons to the amount of neutral gas exiting the electron beam generating device depends on the plasma density, the electron temperature, the flow rate of neutral gas into the interior chamber, and the size of the electron extraction aperture.
It should be appreciated that, if higher plasma densities are obtained, a higher electron current can be extracted from the electron beam generating device or a correspondingly smaller electron loss area Ae can be used. Of course, it should be appreciated that, by using a smaller electron loss area Ae, a correspondingly smaller ion loss area Ai for the conductive ion-collection surface can be used. It should be appreciated that the electron extraction current cannot exceed the ion extraction current that is controlled by the ion loss area Ai. It should be appreciated that using a smaller electron loss area Ae has the advantage of lower neutral gas losses.
For electron beam generating devices that are used as charge neutralizers in satellite and/or spacecraft applications, it is beneficial to produce the plasma 108 using a method that creates the largest fraction of ionization possible, so that the neutral feed gas 102 is not wasted. For example, if the plasma source were 100% efficient in ionizing a neutral gas 102, as it flows through the interior space 106, and each neutral atom is used only once before it touches the ion collection cylinder, a feed gas flow rate of 1 sccm (standard cubic centimeter per minute) of argon allows obtaining (is equivalent to) 0.072 A of extraction current.
However, the inventors have experimentally determined that, when the feed gas 102 is neutral argon, the neutral argon feed gas 102 is more efficiently utilized to create extraction current at flow rates between about 2.5 sccm and about 15 sccm. At these flow rates, the amount of extraction current that can be obtained corresponds to using every atom approximately 14 times as it passes from the gas supply tube 116, through the plasma 108 and out through the central aperture, hole or passageway 152 into a target region. In conventional plasma-based electron sources, plasma ions and electrons are both extracted. As indicated above, in various electron beam generating devices according to this invention, any ions that encounter the electron sheath are reflected. Furthermore, all ions encounter the ion-collection walls and are re-circulated as neutrals. As set forth in Eqs. (1) and (2), the amount of extractable current is linear with the plasma density, which, in turn, increases with radio-frequency power applied to the radio-frequency antenna 140.
As shown in
A radio-frequency signal is applied to the radio-frequency antenna 240. The electromagnetic field generated in response to placing this RF signal on the radio-frequency antenna 240 is inductively coupled to inductive or helicon modes through the slots or voids 232 formed in the conductive ion-collection surface 230 to the plasma 208 within the conductive ion-collection surface 230. The negative voltage source 260 is connected by a conductor 262 to the conductive ion-collection surface 230. The electron extraction ring 250 is connected by a conductor 266 to a local reference ground potential 264.
As shown in
One advantage provided by the magnetic field generated by the one or more steady state magnets 120 or 220 is that it increases the plasma density. The magnetic field also reduces the relative electron losses to the extraction ring, while allowing the electron sheath to form at or near the extraction aperture. This makes the electron beam extraction device more efficient and increases the maximum current that can be produced by the electron beam extraction device.
In step S500, a non-ambipolar flow of ions towards the ion collection cylinder and electrons towards the electron extraction ring is created. In various exemplary embodiments, this non-ambipolar flow is a total non-ambipolar flow. Next, in step S600, electrons are ejected through the electron extraction ring while neutral gas passes through the electron extraction ring. Then, in step S700, the extracted electrons are combined with a positively-charged ion stream to neutralize the positively-charged ions in the ion stream. Operation then continues to step S800.
In step S800, a determination is made whether to continue introducing the supply gas into the vacuum chamber. If so, operation jumps back to step S500 and steps 500-700 are repeated. In contrast, if additional gas is not to be introduced into the vacuum chamber, operation continues to step S900, where operation of the method ends.
In various exemplary embodiments, the amount of electron current can be extracted from an electron beam extraction device according to this invention varies linearly with the plasma density. In turn, the plasma density increases as the radio-frequency power increases. In experiments performed by the inventors, the extracted current increase linearly with increases in the radio-frequency power and did not indicate a saturation point at high radio-frequency powers, indicating room for future progress. At radio-frequency powers between 60 W and 90 W, the plasma did not visually fill the entire conductive ion-collection surface, thus decreasing the effective ion loss area Ai, resulting in decreased ion collection current.
As the DC bias on the conductive ion-collection surface was decreased from 0V to −60V, the conductive ion-collection surface repelled a larger number of electrons away from the conductive ion-collection surface. This increased the local plasma density, which then allowed the conductive ion-collection surface to collect more ion current. The measured electron current from an electron beam extraction device according to this invention agreed closely with the total amount of ion extraction current. This shows that, in some exemplary embodiments, all of the electrons that are lost within the electron beam extraction device according to this invention are lost through the electron extraction ring.
One complication to understanding the electron extraction from the plasma source is the plasma potential difference between the plasma side and the extraction side. Regardless of the bias on the conductive ion-collection surface within the electron beam extraction device according to this invention, the plasma potential of the target side remained more positive than the potential of the plasma source region. At the same time, the plasma potential within the plasma source region remained more positive than the potential on the conductive ion-collection surface.
In experiments, the respective plasma source and conductive ion-collection surface potentials were −10V and −50V. It should be appreciated that, in these experiments, the extraction ring was grounded. Accordingly, this allowed ion loss through an ion sheath to the conductive ion-collection surface within the source region. Similarly, the plasma potential in the region around the extraction aperture remained more positive than the plasma potential in the region. This indicated the existence of an electron sheath at the boundary between the plasma region and the electron extraction ring and aperture that is extracting electrons from the plasma.
As discussed above, the conductive ion-collection surface acts as a Faraday shield. By using the conductive ion-collection surface as a Faraday shield, the plasma potential did not fluctuate significantly. In contrast, when the ion-collection surface/Faraday shield was modified in the exemplary embodiment shown in
The conductive ion-collection surface provided the necessary ion loss area Ai, while the smaller grounded electron extraction ring was used to extract the electrons through an electron sheath into a target region. It is possible, using an electron beam extraction device according to this invention, to scale the extracted electron current based on the total amount of the ion loss area Ai of the conductive ion-collection surface that is located within the source plasma. The total amount of extracted electron current from an electron beam extraction device according to this invention is ultimately limited by one or more of the ion loss area Ai, the electron loss area Ae, the neutral gas flow rate, and the radio-frequency power.
While this invention has been described in conjunction with the exemplary embodiments outlined above, various alternatives, modifications, variations, improvements and/or substantial equivalents, whether known or that are or may be presently foreseen, may become apparent to those having at least ordinary skill in the art. Accordingly, the exemplary embodiments of the invention, as set forth above, are intended to be illustrative, not limiting. Various changes may be made without departing from the spirit or scope of the invention. Therefore, the invention is intended to embrace all known or earlier developed alternatives, modifications, variations, improvements and/or substantial equivalents.
Longmier, Benjamin, Hershkowitz, Noah, Baalrud, Scott
Patent | Priority | Assignee | Title |
11325727, | Aug 27 2013 | The Regents of the University of Michigan | Converging/diverging magnetic nozzle |
11365016, | Aug 27 2013 | The Regents of the University of Michigan | Electrodeless plasma thruster |
8907307, | Mar 11 2011 | Varian Semiconductor Equipment Associates, Inc. | Apparatus and method for maskless patterned implantation |
Patent | Priority | Assignee | Title |
2826708, | |||
4517495, | Sep 21 1982 | STATE OF OREGON THE, ACTING BY AND THROUGH THE OREGON STATE BOARD OF HIGH EDUCATION FOR AND ON BEHALF OF OREGON STATE UNIVERSITY | Multi-electrode plasma source |
4549082, | Apr 19 1983 | Synthetic plasma ion source | |
4910436, | Feb 12 1988 | QUANTRAD SENSOR, INC | Wide area VUV lamp with grids and purging jets |
4977352, | Jun 24 1988 | Hughes Electronics Corporation | Plasma generator having rf driven cathode |
5081398, | Oct 20 1989 | Board of Trustees Operating Michigan State University; Board of Trustees | Resonant radio frequency wave coupler apparatus using higher modes |
5107170, | Oct 18 1988 | Nissin Electric Co., Ltd. | Ion source having auxillary ion chamber |
5198718, | Mar 06 1989 | Nordiko Technical Services Limited | Filamentless ion source for thin film processing and surface modification |
5241244, | Mar 07 1991 | FINMECCANICA-SOCIETA PER AZIONI | Cyclotron resonance ion engine |
5468955, | Dec 20 1994 | International Business Machines Corporation | Neutral beam apparatus for in-situ production of reactants and kinetic energy transfer |
5663971, | Apr 02 1996 | The Regents of the University of California, Office of Technology; Regents of the University of California, The | Axial interaction free-electron laser |
5874807, | Aug 27 1997 | The United States of America as represented by the Secretary of the Navy; NAVY, UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE, THE | Large area plasma processing system (LAPPS) |
6014387, | Sep 09 1996 | Los Alamos National Security, LLC | Stable operating regime for traveling wave devices |
6060718, | Feb 26 1998 | Axcelis Technologies, Inc | Ion source having wide output current operating range |
6100536, | May 20 1997 | Applied Materials, Inc | Electron flood apparatus for neutralizing charge build-up on a substrate during ion implantation |
6150755, | Nov 08 1996 | Veeco Instruments, Inc. | Charged particle source with liquid electrode |
6184623, | Jul 23 1998 | Nissin Inc.; NAGOYA UNIVERSITY | Method for controlling plasma-generating high frequency power, and plasma generating apparatus |
6211622, | Nov 10 1998 | Kawasaki Jukogyo Kabushiki Kaisha | Plasma processing equipment |
6417111, | Jul 05 1999 | Mitsubishi Denki Kabushiki Kaisha | Plasma processing apparatus |
6512333, | May 20 1999 | RF-powered plasma accelerator/homogenizer | |
6661165, | Nov 24 2000 | Astrium GmbH | Inductively coupled high-frequency electron source with a reduced power requirement as a result of an electrostatic inclusion of electrons |
6768120, | Aug 31 2001 | Regents of the University of California, The | Focused electron and ion beam systems |
6805779, | Mar 21 2003 | ZOND, INC | Plasma generation using multi-step ionization |
6809310, | May 20 1999 | Accelerated ion beam generator | |
6849857, | Mar 26 2001 | ASM IP HOLDING B V | Beam processing apparatus |
6870321, | Apr 09 2002 | ArianeGroup GmbH | High-frequency electron source |
6967334, | Mar 04 2003 | Shimadzu Corporation | Ion source and ion beam device |
7012263, | Jun 13 2003 | Sen Corporation, An Shi and Axcelis Company | Ion source apparatus and electronic energy optimized method therefor |
7064491, | Nov 30 2000 | SEMEQUIP, INC | Ion implantation system and control method |
7078862, | Mar 14 2003 | TOHOKU TECHNO ARCH CO , LTD | Beam source and beam processing apparatus |
7087912, | Dec 04 2001 | NISSIN ION EQUIPMENT CO , LTD | Ion beam irradiation apparatus for suppressing charge up of substrate and method for the same |
7326937, | Mar 09 2005 | Verian Semiconductor Equipment Associates, Inc. | Plasma ion implantation systems and methods using solid source of dopant material |
7498592, | Jun 28 2006 | Wisconsin Alumni Research Foundation | Non-ambipolar radio-frequency plasma electron source and systems and methods for generating electron beams |
20010015173, | |||
20030209430, | |||
20040036032, | |||
20040221815, | |||
20050194361, | |||
20070018562, | |||
20080067430, | |||
20100032587, |
Executed on | Assignor | Assignee | Conveyance | Frame | Reel | Doc |
Jul 24 2006 | HERSHKOWITZ, NOAH | Wisconsin Alumni Research Foundation | ASSIGNMENT OF ASSIGNORS INTEREST SEE DOCUMENT FOR DETAILS | 033434 | /0910 | |
Jul 24 2006 | LONGMIER, BENJAMIN W | Wisconsin Alumni Research Foundation | ASSIGNMENT OF ASSIGNORS INTEREST SEE DOCUMENT FOR DETAILS | 033434 | /0910 | |
Jul 24 2006 | BAALRUD, SCOTT D | Wisconsin Alumni Research Foundation | ASSIGNMENT OF ASSIGNORS INTEREST SEE DOCUMENT FOR DETAILS | 033434 | /0910 | |
Dec 03 2008 | Wisconsin Alumni Research Foundation | (assignment on the face of the patent) | / | |||
Nov 22 2021 | University of Wisconsin-Madison | United States Department of Energy | CONFIRMATORY LICENSE SEE DOCUMENT FOR DETAILS | 058318 | /0152 |
Date | Maintenance Fee Events |
Jul 31 2014 | M1551: Payment of Maintenance Fee, 4th Year, Large Entity. |
Jul 31 2014 | M1554: Surcharge for Late Payment, Large Entity. |
Aug 01 2014 | STOL: Pat Hldr no Longer Claims Small Ent Stat |
Jun 22 2018 | M1552: Payment of Maintenance Fee, 8th Year, Large Entity. |
Jun 20 2022 | M1553: Payment of Maintenance Fee, 12th Year, Large Entity. |
Date | Maintenance Schedule |
Jan 25 2014 | 4 years fee payment window open |
Jul 25 2014 | 6 months grace period start (w surcharge) |
Jan 25 2015 | patent expiry (for year 4) |
Jan 25 2017 | 2 years to revive unintentionally abandoned end. (for year 4) |
Jan 25 2018 | 8 years fee payment window open |
Jul 25 2018 | 6 months grace period start (w surcharge) |
Jan 25 2019 | patent expiry (for year 8) |
Jan 25 2021 | 2 years to revive unintentionally abandoned end. (for year 8) |
Jan 25 2022 | 12 years fee payment window open |
Jul 25 2022 | 6 months grace period start (w surcharge) |
Jan 25 2023 | patent expiry (for year 12) |
Jan 25 2025 | 2 years to revive unintentionally abandoned end. (for year 12) |