An etchant composition is provided. The etchant composition includes about 40 to about 65 wt % of phosphoric acid, about 2 to about 5 wt % of nitric acid, about 2 to about 20 wt % of acetic acid, about 0.1 to about 2 wt % of a compound containing phosphate, about 0.1 to about 2 wt % of a compound simultaneously containing an amino group and a carboxyl group, and a remaining weight percent of water for the total weight of the composition.
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1. An etchant composition comprising about 40 to about 65 wt % of phosphoric acid, about 2 to about 5 wt % of nitric acid, about 2 to about 20 wt % of acetic acid, about 0.1 to about 2 wt % of a compound containing phosphate, about 0.1 to about 2 wt % of a compound simultaneously containing an amino group and a carboxyl group, and a remaining weight percent of water for the total weight of the etchant composition.
9. A method of forming a metal pattern, the method comprising the steps of:
depositing a metal layer comprising copper or a copper alloy;
forming a photoresist pattern on the metal layer;
etching the metal layer by using the photoresist pattern as a mask; and
removing the photoresist pattern,
wherein the step of etching the metal layer is conducted using an etchant composition comprising about 40 to about 65 wt % of phosphoric acid (H3PO4), about 2 to about 5 wt % of nitric acid (HNO3), about 2 to about 20 wt % of acetic acid (CH3COOH), about 0.1 to about 2 wt % of a compound containing phosphate, about 0.1 to about 2 wt % of a compound simultaneously containing an amino group and a carboxyl group, and a remaining weight percent of water for the total weight of the etchant composition.
18. A method of fabricating a thin film transistor array panel, the method comprising the steps of:
forming gate lines on an insulation substrate;
forming data lines crossing the gate lines and having source electrodes, and drain electrodes facing the source electrodes;
forming a semiconductor layer around the source and drain electrodes; and
forming pixel electrodes contacting the drain electrodes,
wherein at least one of the steps of forming the gate lines and forming the data lines comprises the sub-steps of:
depositing a metal layer comprising copper or a copper alloy onto the insulation substrate; and
etching the metal layer by using an etchant composition comprising about 40 to about 65 wt % of phosphoric acid (H3PO4), about 2 to about 5 wt % of nitric acid (HNO3), about 2 to about 20 wt % of acetic acid (CH3COOH), about 0.1 to about 2 wt % of a compound containing phosphate, about 0.1 to about 2 wt % of a compound simultaneously containing an amino group and a carboxyl group, and a remaining weight percent of water for the total weight of the etchant composition.
2. The etchant composition of
3. The etchant composition of
4. The etchant composition of
6. The etchant composition of
7. The etchant composition of
8. The etchant composition of
10. The method of
11. The method of
12. The method of
13. The method of
14. The method of
16. The method of
17. The method of
19. The method of
depositing a metal layer comprising copper or a copper alloy onto the insulation substrate;
etching the metal layer by using an etchant composition comprising about 40 to about 65 wt % of phosphoric acid (H3PO4), about 2 to about 5 wt % of nitric acid (HNO3), about 2 to about 20 wt % of acetic acid (CH3COOH), about 0.1 to about 2 wt % of a compound containing phosphate, about 0.1 to about 2 wt % of a compound simultaneously containing an amino group and a carboxyl group, and a remaining weight percent of water for the total weight of the etchant composition, thereby forming the gate lines or the data lines;
coating a photoresist film onto the gate lines;
exposing the photoresist film to light illuminated from the rear of the insulation substrate by using the metal layer as a mask, and developing the etched photoresist film to thereby form a photoresist pattern; and
applying heat or light to the photoresist pattern.
20. The method of
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This application claims priority to Korean Patent Application No. 10-2008-0110435 filed on Nov. 7, 2008, the entire disclosure of which is hereby incorporated by reference herein in its entirety.
(a) Technical Field
The present disclosure relates to an etchant composition, and to a method of fabricating a metal pattern and a thin film transistor array panel.
(b) Description of the Related Art
In recent times, there has been an increase in the amount of the usage of flat panel displays, such as, for example, a liquid crystal display, a plasma display device, an electrophoretic display, and an organic electroluminescence device.
Such a display device may be provided with a thin film transistor, which may be connected to gate and data lines crossing each other in an insulated manner.
Scan signals (or gate signals), such as a gate-on voltage and a gate-off voltage, may be input through the gate line, and display signals (or data signals) may be output through the data line.
As the display device is enlarged in dimension, the length of wiring lines like the gate and data lines may also increase therewith. With an increase in the length of the wiring lines and resistance thereof, it may be necessary to lower the heightened resistance of the wiring lines so as to properly transmit signals therethrough.
Furthermore, the thickness or width of the wiring lines should be enlarged so as to lower the resistance of the wiring lines. However, certain difficulties may be encountered with the enlarged thickness thereof such that a stepped difference may be made due to the thickness enlargement and other wiring lines placed over the enlarged wiring lines may be broken due to the stepped difference. Consequently with the enlarged width thereof, the aperture ratio may be reduced.
Exemplary embodiments of the present invention may provide an etchant composition and a method of fabricating a metal pattern and a thin film transistor array panel having the benefits of ensuring good etching characteristics of wiring lines.
In accordance with an exemplary embodiment of the present invention, an etchant composition is provided. The etchant composition includes about 40 to about 65 wt % of phosphoric acid, about 2 to about 5 wt % of nitric acid, about 2 to about 20 wt % of acetic acid, about 0.1 to about 2 wt % of a compound containing phosphate, about 0.1 to about 2 wt % of a compound simultaneously containing an amino group and a carboxyl group, and a remaining weight percent of water for the total weight of the composition.
The etchant composition may further include about 0.1 to about 2 wt % of an organic acid excluding acetic acid.
The organic acid excluding acetic acid may be at least one material selected from the group consisting of butanoic acid, citric acid, formic acid, gluconic acid, glycolic acid, malonic acid, oxalic acid, pentanoic acid, and a water-soluble organic acid excluding acetic acid.
The compound containing phosphate may be a material where one, two, or three hydrogen atoms in phosphoric acid are substituted by alkali metals or alkali earth metals.
The compound containing phosphate may be at least one material selected from the group consisting of sodium dihydrogen phosphate and potassium dihydrogen phosphate.
The compound simultaneously containing an amino group and a carboxyl group may be at least one material selected from an alanine-based compound, an aminobutyric acid-based compound, a glutamic acid-based compound, a glycine-based compound, an iminodiacetic acid-based compound, a nitrilotriacetic acid-based compound, and a sarcosine-based compound.
The etchant composition may etch a single-layered structure based on copper or a copper alloy and a multi-layered structure of two or more layers based on the copper or copper alloy.
The etchant composition may further include at least one material selected from the group consisting of an etch control agent, a surfactant, a metal ion sequestering agent, a corrosion inhibitor, and a pH control agent.
The water is preferably deionized water.
In accordance with another exemplary embodiment of the present invention, a method of forming a metal pattern is provided. The method includes the steps of depositing a metal layer including copper or a copper alloy, forming a photoresist pattern on the metal layer, etching the metal layer by using the photoresist pattern as a mask, and removing the photoresist pattern. The step of etching the metal layer is conducted using an etchant composition including about 40 to about 65 wt % of phosphoric acid (H3PO4), about 2 to about 5 wt % of nitric acid (HNO3), about 2 to about 20 wt % of acetic acid (CH3COOH), about 0.1 to about 2 wt % of a compound containing phosphate, about 0.1 to about 2 wt % of a compound simultaneously containing an amino group and a carboxyl group, and a remaining weight percent of water for the total weight of the composition.
The etching composition may further include about 0.1 to about 2 wt % of an organic acid excluding acetic acid.
The organic acid excluding acetic acid may be at least one material selected from the group consisting of butanoic acid, citric acid, formic acid, gluconic acid, glycolic acid, malonic acid, oxalic acid, pentanoic acid, and a water-soluble organic acid excluding acetic acid.
The compound containing phosphate may be a material where one, two, or three hydrogen atoms in phosphoric acid are substituted by alkali metals or alkali earth metals.
The compound containing phosphate may be at least one material selected from the group consisting of sodium dihydrogen phosphate and potassium dihydrogen phosphate.
The compound simultaneously containing an amino group and a carboxyl group may be at least one material selected from an alanine-based compound, an aminobutyric acid-based compound, a glutamic acid-based compound, a glycine-based compound, an iminodiacetic acid-based compound, a nitrilotriacetic acid-based compound, and a sarcosine-based compound.
The etchant composition may etch a single-layered structure based on copper or a copper alloy and a multi-layered structure of two or more layers based on the copper or copper alloy.
The etchant composition may further include at least one material selected from the group consisting of an etch control agent, a surfactant, a metal ion sequestering agent, a corrosion inhibitor, and a pH control agent.
The water is preferably deionized water.
In another exemplary embodiment of the present invention, a method of fabricating a thin film transistor array panel is provided. The method includes the steps of forming gate lines on an insulation substrate, forming data lines crossing the gate lines and having source electrodes, and drain electrodes facing the source electrodes, forming a semiconductor layer around the source and drain electrodes, and forming pixel electrodes contacting the drain electrodes. With at least one of the steps of forming the gate lines and forming the data lines, a metal layer including copper or a copper alloy is deposited onto the insulation substrate, and the metal layer is etched by using an etchant composition including about 40 to about 65 wt % of phosphoric acid (H3PO4), about 2 to about 5 wt % of nitric acid (HNO3), about 2 to about 20 wt % of acetic acid (CH3COOH), about 0.1 to about 2 wt % of a compound containing phosphate, about 0.1 to about 2 wt % of a compound simultaneously containing an amino group and a carboxyl group, and a remaining weight percent of water for the total weight of the composition.
With the step of forming the gate lines, a metal layer including copper or a copper alloy is deposited onto the insulation substrate, and the metal layer is etched by using an etchant composition including about 40 to about 65 wt % of phosphoric acid (H3PO4), about 2 to about 5 wt % of nitric acid (HNO3), about 2 to about 20 wt % of acetic acid (CH3COOH), about 0.1 to about 2 wt % of a compound containing phosphate, about 0.1 to about 2 wt % of a compound simultaneously containing an amino group and a carboxyl group, and a remaining weight percent of water for the total weight of the composition, thereby forming the gate lines or the data lines. Then, a photoresist film is coated onto the gate lines. The photoresist film is exposed to light illuminated from the rear of the insulation substrate by using the metal layer as a mask and developed to thereby form a photoresist pattern. Heat or light is then applied to the photoresist pattern.
The etchant composition may further include about 0.1 to about 2 wt % of an organic acid excluding acetic acid.
With the usage of an etchant composition according to an exemplary embodiment of the present invention, the metal wires of a single-layered structure based on copper or a copper alloy or a multi-layered structure of two or more layers based on the metal of copper or a copper alloy can be simultaneously etched with process stability and good etch profiles.
Furthermore, the etchant composition may exhibit excellent productivity in that it may have uniform etching characteristics without damaging the underlying layer components, and it may be applicable to a large area substrate without damaging the device.
In addition, the etchant composition may serve to form low resistance wires of a thin film transistor array panel without causing breakage of the wires or reducing the aperture ratio.
Exemplary embodiments of the present invention can be understood in more detail from the following description taken in conjunction with the attached drawings in which:
The present invention will be described more fully hereinafter with reference to the accompanying drawings, in which exemplary embodiments of the invention are shown.
The merits and features of the present invention, and the method of achieving them, will be clearly understood by way of the exemplary embodiments to be described in detail with reference to the accompanying drawings. However, as those skilled in the art would realize, the described embodiments may be modified in various different ways, all without departing from the spirit or scope of the present invention. The exemplary embodiments disclosed in this detailed description are only for enhancement of understanding of the present invention, and it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the appended claims.
An etchant composition according to an exemplary embodiment of the present invention will now be described in detail.
An etchant composition according to an exemplary embodiment of the present invention includes, for example, about 40 to about 65 wt % of phosphoric acid (H3PO4), about 2 to about 5 wt % of nitric acid (HNO3), about 2 to about 20 wt % of acetic acid (CH3COOH), about 0.1 to about 2 wt % of an organic acid excluding acetic acid, about 0.1 to about 2 wt % of a compound containing phosphate, about 0.1 to about 2 wt % of a compound simultaneously containing an amino group and a carboxyl group, and the remaining weight percent of water for the total weight of the composition.
The phosphoric acid may etch copper and a copper alloy as a main oxidizing agent. The content of the phosphoric acid is, for example, about 40 wt % to about 65 wt % by total weight of the composition. In the case where the content of the phosphoric acid is less than about 40 wt %, the copper etching speed may be lowered or non-uniform etching may be made so that the desired etching characteristics may not be obtained. By contrast, in the case where the content of the phosphoric acid exceeds about 65 wt %, the chemical wettability of a photosensitive film may become heightened, and as a result, the end portion of the photosensitive film may be lifted or curled up. In the case where the photosensitive film curls up at the end thereof, a gap may be made between the end of the photosensitive film and the metals of copper and copper alloy contacting the photosensitive film, and the etchant may over flow in through the gap so that the target may be partially over-etched. In such a case, the one-sided critical dimension between the over-etched portion and the non-overetched portion may be enlarged, and the aspect ratio, the etch depth, and the etch time may be altered. Furthermore, the line width of the copper and the copper alloy film patterns may be reduced so that the desired resistance characteristics may not be obtained.
The nitric acid functions as an oxidizing agent, and has a role of controlling the etch speed, the etch depth, and the aspect ratio, together with phosphoric acid. The content of the nitric acid is, for example, about 2 wt % to about 5 wt % by total weight of the composition. In the case where the content of the nitric acid is less than about 2 wt %, the copper etching speed may be lowered, or non-uniform etching may occur so that stains or spots are generated. By contrast, in the case where the content of the nitric acid exceeds about 5 wt %, the photosensitive film may peel off. With the peeling off of the photosensitive film, the underlying metal layer may be over-etched so that the wiring is broken, or it may become difficult for the layer to properly function as an electrode.
The acetic acid also functions as an oxidizing agent, and the content thereof is, for example, about 2 wt % to about 20 wt % by total weight of the composition. In the case where the content of the acetic acid is less than about 2 wt %, the copper etching may not be made fluently so that copper remnants may be partially produced in the substrate. In the case where the content of the acetic acid exceeds about 20 wt %, the copper metal may be over-etched so that uniform etching characteristics may not be obtained.
The organic acid excluding acetic acid functions as a subsidiary oxidizing agent for oxidizing the copper metal, and the content thereof is, for example, about 0.1 wt % to about 2 wt % by total weight of the composition. In the case where the content of the organic acid is less than about 0.1 wt %, copper remnants may be partially produced, while in case where the content of the organic acid exceeds about 2 wt %, the copper metal may be over-etched.
The organic acid excluding acetic acid may be at least one material selected from, for example, butanoic acid, citric acid, formic acid, gluconic acid, glycolic acid, malonic acid, oxalic acid, pentanoic acid, and a water-soluble organic acid excluding acetic acid.
The compound containing phosphate controls the copper etching speed, and the content thereof is about 0.1 wt % to about 2 wt % by total weight of the composition. In the case where the content of the compound containing phosphate is less than about 0.1 wt %, it may not properly function as a copper etching speed control agent. By contrast, in case the content of the phosphate-contained compound exceeds about 2 wt %, the copper etching speed may be lowered so that copper remnants may be produced, and non-uniform etching characteristics result.
The phosphate-contained compound is, for example, a salt where one, two, or three hydrogen atoms in phosphoric acid are substituted by alkali metals or alkali earth metals, and may be at least one material selected from, for example, sodium dihydrogen phosphate and potassium dihydrogen phosphate.
The compound simultaneously containing an amino group and a carboxyl group also controls the copper etching speed, and the content thereof is about 0.1 wt % to about 2 wt % by total weight of the composition. In the case where the content of the compound simultaneously containing the amino group and carboxyl group is less than about 0.1 wt %, the copper etching speed may not be controlled so that over-etching may occur. In the case where the content of the compound simultaneously containing the amino group and carboxyl group exceeds about 2 wt %, the copper etching speed may be lowered so that the etch time may be increased and difficulties associated with productivity may result.
The compound simultaneously containing the amino group and carboxyl group may be at least one material selected from, for example, the compounds based on alanine, aminobutyric acid, glutamic acid, glycine, iminodiacetic acid, nitrilotriacetic acid, and sarcosine.
The etchant composition according to an exemplary embodiment of the present invention may further include at least one material selected from, for example, an etch control agent, a surfactant, a metal ion sequestering agent, a corrosion inhibitor, and a pH control agent.
With an exemplary embodiment of the present invention, deionized water is preferably used as the water content, and the deionized water more preferably has resistivity of about 18 MΩ/cm or more, which is well adapted for use in the semiconductor fabrication process.
The present invention will be described more fully hereinafter by way of examples and comparative examples, but it is to be understood that the examples are only for enhancement of understanding of the present invention, and the invention is not limited to those examples.
Examples will be now described with reference to
A display panel with metal wiring layers containing copper or a copper alloy was fabricated.
A substrate based on a glass material with a size of about 300× about 400 mm was prepared, and metal layers containing copper or a copper alloy were deposited onto the substrate as gate and data lines. A photoresist pattern was formed on the metal layers.
An etchant composition of about 180 kg containing phosphoric acid (H3PO4), nitric acid (HNO3), acetic acid (CH3COOH), glycolic acid, sodium dihydrogen phosphate, iminodiacetic acid, and water in accordance with the composition ratios listed in Table 1 was prepared. The etchant composition was put into experimental spray etching equipment (manufactured by K. C Tech Company, model ETCHER(TFT)), and the etching process was conducted at about 30° C., about 33° C., and about 35° C. The total etch time was established such that the time detected by an end point detector (EPD) was added by the amounts of about 50%, about 70%, about 90%, and about 110%, respectively. The substrate was put into the etching equipment and sprayed. When the etching with respect to the gate and data lines was completed, the substrate was taken out and cleaned with deionized water. The etching profile was observed by a scanning electronic microscope (SEM, manufactured by HITACHI Company, model S-4700), and the total time detected by the end point detector (for convenience, referred to hereinafter simply as EPD), the one-sided critical dimension loss (for convenience, referred to hereinafter simply as CD skew), and the presence or absence of remnants after the etching were evaluated. Thereafter, the substrate was dried by using a hot air dryer, and the photoresist was stripped by using a photoresist stripper. After the cleaning and the drying, the etching profile was again observed, and the EPD, the CD skew, the taper angle, and the presence or absence of remnants after the etching were evaluated.
((Etching characteristic result standard))
⊚ (Excellent): EPD≦about 70 sec, CD skew≦about 2 μm, Taper angle=about 70-about 90 degrees
∘ (Good): EPD≦about 75 sec, CD skew≦about 3 μm, Taper angle=about 60-about 70 degrees
Δ(Fair): EPD≦about 80 sec, CD skew≦about 4 μm, Taper angle=about 50-about 60 degrees
x (Poor): EPD≦about 80 sec, CD skew>about 4 μm, Taper angle<about 50 degrees
The results based on the above-identified standards are listed in Table 1.
TABLE 1
Composition (wt %)
Sodium
Etching characteristic result
Phosphoric
Nitric
Acetic
Glycolic
dihydrogen
Iminodiacetic
CD
Taper
Ex.
acid
acid
acid
acid
phosphate
acid
Water
EPD
skew
angle
Remnants
1
45
4
15
2.0
0.7
0.5
32.8
Δ
Δ
Δ
None
2
47
3
20
1.0
0.3
0.7
28
Δ
◯
Δ
None
3
48
5
18
0.8
0.7
1.0
26.5
◯
Δ
Δ
None
4
48
7
20
0.5
0.5
0.5
23.5
◯
Δ
Δ
None
5
50
3
20
1.0
0.7
0.7
24.6
◯
◯
Δ
None
6
52
3
20
2.0
0.5
0.5
22
◯
◯
Δ
None
7
55
4
20
1.5
1.5
2.0
16.0
⊚
◯
⊚
None
8
60
3
12
1.0
2.0
2.0
20.0
⊚
⊚
⊚
None
9
65
7
10
0.5
1.3
0.7
15.5
⊚
Δ
◯
None
10
68
4
10
1.0
1.5
1.5
14.0
⊚
Δ
◯
None
11
60
3
12
0.0
2.0
2.0
21.0
⊚
◯
◯
None
12
60
3
12
1.0
0.0
2.0
22.0
◯
◯
◯
None
13
60
3
12
1.0
2.0
0.0
22.0
◯
Δ
◯
None
14
60
3
12
0.0
0.0
2.0
23.0
◯
Δ
Δ
None
15
60
3
12
0.0
2.0
0.0
23.0
⊚
◯
Δ
None
16
60
3
12
1.0
0.0
0.0
24.0
⊚
Δ
Δ
None
(EX.: Example)
As known from Table 1, in case a plurality of metal layers were collectively etched using an etchant composition according to an exemplary embodiment of the present invention, the etching characteristics of Fair (Δ), Good (∘), or Excellent (⊚) could be obtained, and etching remnants were not found.
As the EPD increased, the CD skew was proportionally increased, and the CuO-contained double-layered pattern turned out to be smaller in CD skew than that of the Cu layer. No significant difference occurred in CD skew as a function of different temperatures, and etching remnants were not found throughout the entire structure.
As described above, it can be known from the sectional SEM photographs of the Cu layer and the CuO/Cu layer after the etching process that excellent profiles can be obtained in case the gate and data lines are etched using an etchant composition according to an exemplary embodiment of the present invention.
As the EPD increased, the CD skew was proportionally increased, and the CuO-contained double-layered pattern turned out to be smaller in taper angle than that of the Cu layer. No significant difference in CD skew occurred as a function of different temperatures, and etching remnants were not found throughout the entire structure.
As described above, it can be known from the sectional SEM photographs of the Cu layer and the CuO/Cu layer after the etching process was completed and the overlying photoresist pattern was removed therefrom that excellent profiles can be obtained in case the gate and data lines are etched using an etchant composition according to an exemplary embodiment of the present invention.
With comparative examples, experiments were undertaken under the same conditions as those related to the examples except that the etchant composition was differentiated from that of the examples.
A substrate based on a glass material with a size of about 300× about 400 mm was prepared, and metal layers containing copper or a copper alloy were deposited onto the substrate as gate and data lines.
An etchant composition of about 180 kg containing phosphoric acid (H3PO4), nitric acid (HNO3), acetic acid (CH3COOH), glycolic acid, sodium dihydrogen phosphate, iminodiacetic acid, and water in accordance with the composition ratios listed in Table 2 was prepared. The etchant composition was put into experimental spray etching equipment (manufactured by K. C Tech Company, model ETCHER(TFT)), and the etching process was conducted at about 30° C., about 33° C., and about 35° C. The total etch time was established such that the time detected by an end point detector (EPD) was added by the amount of about 50%, about 70%, about 90%, and about 110%, respectively. The substrate was put into the etching equipment and sprayed. When the etching with respect to the gate and the data lines was completed, the substrate was taken out and cleaned by deionized water. The etching profile was observed by a scanning electronic microscope (SEM, manufactured by HITACHI Company, model S-4700), and the total etch time detected by the end point detector (for convenience, referred to hereinafter simply as EPD), the one-sided critical dimension loss (for convenience, referred to hereinafter simply as CD skew), and the presence or absence of remnants after the etching were evaluated. Thereafter, the substrate was dried by using a hot air dryer, and the photoresist was stripped by using a photoresist stripper. After the cleaning and the drying, the etching profile was again observed, and the EPD, the CD skew, the taper angle, and the presence or absence of remnants after the etching were evaluated.
((Etching characteristic result standard))
⊚ (Excellent): EPD≦about 70 sec, CD skew≦about 2 μm, Taper angle=about 70-about 90 degrees
∘ (Good): EPD≦about 75 sec, CD skew≦about 3 μm, Taper angle=about 60-about 70 degrees
Δ(Fair): EPD≦about 80 sec, CD skew≦about 4 μm, Taper angle=about 50-about 60 degrees
x (Poor): EPD≦about 80 sec, CD skew>about 4 μm, Taper angle<about 50 degrees
The results based on the above-identified standards are listed in Table 2.
TABLE 2
Composition (wt %)
Sodium
Etching characteristic result
Comp.
Phosphoric
Nitric
Acetic
Glycolic
dihydrogen
Iminodiacetic
CD
Taper
Ex.
acid
acid
acid
acid
phosphate
acid
Water
EPD
skew
angle
Remnants
1
74
2
8
2
0.5
1
12.5
Pattern loss
2
68
2
10
7
1
2
10
Pattern loss
3
50
3
15
2
2
7
21
X
Partially non-etched
4
48
7
10
1.5
7
2
24.5
X
Partially non-etched
5
38
2
25
3
0.5
1
30.5
Non-etched
(Comp. Ex.: Comparative Example)
It can be known from Table 2 that when a plurality of metal layers were collectively etched by using etchant compositions according to the comparative examples, there were cases exhibiting poor etching characteristics in which the EPD was not detected, or the pattern was destroyed or partially non-etched. Accordingly, differing from that according to an exemplary embodiment of the present invention, there is a difficulty in applying the etchant compositions according to the comparative examples for use with the practical etching process.
A method of fabricating a liquid crystal display using an etchant composition according to an exemplary embodiment of the present invention will now be described. However, the present invention is not limited to the liquid crystal display, but may be applied for use in fabricating other kinds of display devices such as an organic electroluminescence device, a plasma display device, and an electrophoretic display.
A method of fabricating a thin film transistor array panel using an etchant composition according to an exemplary embodiment of the present invention will now be described in detail.
A plurality of gate lines 121 are formed on an insulation substrate 110 to transmit gate signals. The gate lines 121 proceed in the horizontal direction, and each partially forms a plurality of gate electrodes 124.
The gate lines 121 may be formed with aluminum-based metals such as, for example, aluminum (Al) and aluminum alloys, silver-based metals such silver (Ag) and silver alloys, copper-based metals such as copper (Cu) and copper alloys, molybdenum-based metals such as molybdenum (Mo) and molybdenum alloys, chromium (Cr), tantalum (Ta), or titanium (Ti). The gate lines 121 may have a multi-layered structure with two conductive layers that differ in physical properties from each other. With the present exemplary embodiment, the gate lines 121 contain, for example, a copper oxide (CuO) selected from copper-based metals such as copper (Cu) and copper alloys.
Referring to
The data lines 171 proceed in the vertical direction, and cross the gate lines 121 so as to transmit data voltages. A plurality of branches are protruded from the respective data lines 171 toward the drain electrodes 175 so as to form source electrodes 173. A pair of a source electrode 173 and a drain electrode 175 that are separated from each other are placed opposite to each other while centering around a gate electrode 124.
The data lines 171 with the source electrodes 173, and the drain electrodes 175 are preferably formed with refractory metals such as, for example, molybdenum, chromium, tantalum, and titanium, or alloys thereof, and may have a multi-layered structure with a refractory metal-based layer and a low resistance conductive layer. For example, the multi-layered structure may be a double-layered structure with a chromium or molybdenum (alloy)-based lower layer and an aluminum (alloy)-based upper layer, or a triple-layered structure with a molybdenum (alloy)-based lower layer, an aluminum (alloy)-based middle layer, and a molybdenum (alloy)-based upper layer. Furthermore, the data lines 171 and the drain electrodes 175 may be formed with various other metals or conductors. With the present exemplary embodiment, the data lines 171 contain, for example, copper oxide (CuO) selected from copper-based metals such as copper (Cu) and copper alloys. A passivation layer 180 with contact holes 185 is formed on the data lines 171, and is overlaid with pixel electrodes 191.
The gate electrode 124, the source electrode 173, and the drain electrode 175 form a thin film transistor (TFT) in association with the semiconductor island 154, and the channel of the thin film transistor is formed at the semiconductor island 154 between the source and drain electrodes 173 and 175.
Now, a method of fabricating the thin film transistor array panel shown in
First, as shown in
Thereafter, as shown in
As shown in
Then, as shown in
As shown in
As shown in
As shown in
As shown in
Although it is illustrated with the present exemplary embodiment that the over-coat films 141a are formed at both sides of the gate line 121, such an over-coat film may be formed around the data line 171. Furthermore, a silicon nitride (SiNx)-based layer may be formed to secure the stability for the etchant composition before the formation of the gate line 121 or the data line 171. Meanwhile, although a thin film transistor array panel with a metal pattern is exemplified in this exemplary embodiment, an etchant composition according to an exemplary embodiment of the present invention is not limited thereto, and is applicable to all the metal patterns containing a copper alloy with the contents of copper or a copper oxide.
Having described the exemplary embodiments of the present invention, it is further noted that it is readily apparent to those of reasonable skill in the art that various modifications may be made without departing from the spirit and scope of the invention which defined by the metes and bounds of the appended claims
Choi, Young-Joo, Lee, Seung-yong, Choung, Jong-Hyun, Park, Hong-Sick, Hong, Sun-Young, Kim, Bong-Kyun, Lee, Byeong-Jin, Lee, Joon-woo, Park, Young-Chul, Lee, Hyun-Kyu, Jin, Young-Jun, Jang, Sang-Hoon, Lim, Min-Ki, Suh, Nam-Seok, Yang, Seung-Jae, Kim, Ky-Sub
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| Mar 31 2009 | YANG, SEUNG-JAE | SAMSUNG ELECTRONICS CO , LTD | ASSIGNMENT OF ASSIGNORS INTEREST SEE DOCUMENT FOR DETAILS | 022615 | /0431 | |
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| Mar 31 2009 | LIM, MIN-KI | SAMSUNG ELECTRONICS CO , LTD | ASSIGNMENT OF ASSIGNORS INTEREST SEE DOCUMENT FOR DETAILS | 022615 | /0431 | |
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