A semiconductor based light emitting device (LED) can include a p-type nitride layer and a metal ohmic contact, on the p-type nitride layer. The metal ohmic contact can have an average thickness of less than about 25 Å and a specific contact resistivity less than about 10−3 ohm-cm2.
|
1. A semiconductor based light emitting device (LED) comprising:
a p-type nitride layer; and
a metal ohmic contact, on the p-type nitride layer, the metal ohmic contact comprising an average thickness of less than about 5 Å and a specific contact resistivity less than about 10−3 ohm-cm2.
2. An LED according to
3. An LED according to
5. An LED according to
6. An LED according to
7. An LED according to
8. An LED according to
9. An LED according to
10. An LED according to
11. An LED according to
12. An LED according to
13. An LED according to
14. An LED according to
15. An LED according to
16. An LED according to
17. An LED according to
18. An LED according to
19. An LED according to
a reflector beneath the metal ohmic contact configured to reflect light emitted through the metal ohmic contact back toward the metal ohmic contact.
20. An LED according to
|
|||||||||||||||||||||||||||||||
The present application is related to U.S. Provisional Patent Application No. 60/591,353; Filed Jul. 27, 2004 entitled Ultra-Thin Ohmic Contacts for P-Type Nitride Light Emitting Devices by Raffetto et al. and to U.S. Provisional Patent Application No. 60/639,705; Filed Dec. 28, 2004 entitled Ultra-Thin Ohmic Contacts for P-Type Nitride Light Emitting Devices by Raffetto, the disclosures of which are hereby incorporated herein by reference in their entireties.
This Invention was made with Government support under grant number DE-FC26-00NT40985 from the Department Of Energy. The Government has certain rights to this invention.
The present invention relates to semiconductor devices, and more particularly to light emitting devices having an ohmic contact formed on a Group III nitride-based epitaxial layer.
Light emitting diodes and laser diodes are well known solid state electronic devices capable of generating light upon application of a sufficient voltage. Light emitting diodes and laser diodes may be generally referred to as light emitting devices (LEDs). Light emitting devices generally comprise a p-n junction formed in an epitaxial layer grown on a substrate such as sapphire, silicon, silicon carbide, gallium arsenide and the like. The wavelength distribution of the light generated by the LED depends on the material from which the p-n junction is fabricated and the structure of the thin epitaxial layers that comprise the active region of the device.
Typically, an LED includes an n-type substrate, an n-type epitaxial region formed on the substrate and a p-type epitaxial region formed on the n-type epitaxial region. In order to facilitate the application of a voltage to the device, an anode ohmic contact is formed on a p-type region of the device (typically, an exposed p-type epitaxial layer) and a cathode ohmic contact is formed on an n-type region of the device (such as the substrate or an exposed n-type epitaxial layer).
Because it may be difficult to make highly conductive p-type Group III-nitride materials (such as GaN, AlGaN, InGaN, AlInGaN, and AlInN), lack of current spreading in the p-type layer may be a limiting factor in the performance of LEDs formed from such materials. Accordingly, it may be desirable to form an ohmic contact over as much of the surface area of the exposed p-type layer as possible in order to induce current to pass through as much of the active region of the device as possible. However, providing a large anode contact may be detrimental to device performance in some respects. It is typically desirable to extract as much light as possible out of a light emitting diode. Since the anode ohmic contact generally comprises a metal layer, light generated in the active region of the LED may be partially absorbed in the ohmic contact, reducing the overall luminescent efficiency of the device.
In some devices, it may be desirable to form a reflective metal layer over the exposed p-type layer, so that light that would normally exit the device through the p-type layer is reflected back into the device to be extracted through the substrate. However, highly reflective metals such as aluminum and silver do not form good ohmic contacts to p-type nitride materials. Thus, an ohmic contact is typically provided between the p-type nitride layer and the reflector. Reducing absorption in the ohmic contact remains a concern in such devices.
Accordingly, there is a need for improved ohmic contact structures and methods of forming ohmic contact structures on p-type nitride materials.
Embodiments according to the invention can provide ultra-thin ohmic contacts for p-type nitride light emitting devices and methods of forming. Pursuant to these embodiments, a semiconductor based Light Emitting Device (LED) can include a p-type nitride layer and a metal ohmic contact, thereon, where the metal ohmic contact has an average thickness of less than about 25 Å and a specific contact resistivity less than about 10−3 ohm-cm2. The metal ohmic contact can comprise Pt.
In some embodiments according to the invention, the metal ohmic contact has an average thickness less than about 20 Å. In some embodiments according to the invention, the metal ohmic contact has an average thickness between about 13 Å and about 18 Å. In some embodiments according to the invention, the metal ohmic contact has an average thickness of about 15 Å. In some embodiments according to the invention, the metal ohmic contact has an average thickness less than about 10 Å.
In some embodiments according to the invention, the metal ohmic contact covers less than about 67% of the p-type nitride layer measured via an Auger analysis of the metal ohmic contact. In some embodiments according to the invention, the metal ohmic contact covers a portion of the p-type nitride layer and a remaining portion of the p-type nitride layer is un-covered by the metal ohmic contact.
In some embodiments according to the invention, the metal ohmic contact has an average thickness less than about 5 Å. In some embodiments according to the invention, the metal ohmic contact covers less than about 47% of the p-type nitride layer measured via an Auger analysis of the metal ohmic contact.
In some embodiments according to the invention, a normalized transmissivity of the metal ohmic contact is about 92% at a measurement wavelength of about 350 nm. In some embodiments according to the invention, the metal ohmic contact covers a portion of the p-type nitride layer and a remaining portion of the p-type nitride layer is un-covered by the metal ohmic contact.
In some embodiments according to the invention, the metal ohmic contact has an average thickness less than about 3 Å. In some embodiments according to the invention, the metal ohmic contact covers less than about 28% of the p-type nitride layer measured via an Auger analysis of the metal ohmic contact.
In some embodiments according to the invention, the normalized transmissivity of the metal ohmic contact is about 94% to about 96% at a measurement wavelength of about 350 nm. In some embodiments according to the invention, the metal ohmic contact has an average thickness of about 1 Å. In some embodiments according to the invention, the metal ohmic contact covers less than about 13% of the p-type nitride layer measured via an Auger analysis of the metal ohmic contact. In some embodiments according to the invention, a normalized transmissivity of the metal ohmic contact is more than about 98% at a measurement wavelength of about 350 mm.
In some embodiments according to the invention, the metal ohmic contact can be platinum, rhodium, zinc oxide, palladium, palladium oxide, titanium, nickel/gold, nickel oxide/gold, nickel oxide/platinum and/or titanium/gold. In some embodiments according to the invention, the LED can also include a bonding pad on the metal ohmic contact.
In some embodiments according to the invention, an LED can include a p-type nitride layer and a metal ohmic contact, thereon, where the metal ohmic contact has an average thickness of about 1 Å. In some embodiments according to the invention, and LED can include a p-type nitride layer and a metal ohmic contact thereon. The metal ohmic contact can have an average thickness of about 1 Å that covers about 13% of the p-type nitride layer measured via an Auger analysis of the metal ohmic contact.
In some embodiments according to the invention, an LED includes a p-type nitride layer and a metal ohmic contact thereon. The metal ohmic contact can have an average thickness sufficient to provide a normalized transmissivity of more than about 98% at a measurement wavelength of about 350 nm.
In some embodiments according to the invention, a method of forming a semiconductor based Light Emitting Device (LED) can be provided by forming a p-type nitride layer on an n-type substrate, forming a metal ohmic contact on the p-type nitride layer to an average thickness less than about 25 Å and a specific contact resistivity less than about 10−3 ohm-cm2, and ceasing forming the metal ohmic contact.
In some embodiments according to the invention, forming a metal ohmic contact can further include depositing metal on the p-type nitride layer and on a witness slide for a time interval at a rate to provide a metal layer having a first average thickness for the metal ohmic contact and an indication of thickness of the metal layer on the witness slide is monitored. Metal is further deposited for subsequent time interval(s) and/or subsequent rate(s) to increase the average thickness if the indication is above a predetermined indication threshold. Deposition of the metal is ceased if the indication is about equal to or below the predetermined indication threshold.
In some embodiments according to the invention, the monitoring of the indication of thickness is provided by measuring transmissivity, sheet resistivity, capacitance, reflectance, and/or resonant frequency of the metal layer. In some embodiments according to the invention, the metal is further deposited until the indication exceeds the predetermined indication threshold. In some embodiments according to the invention, the rate of deposition is about 0.1 Å to about 0.5 Å per second.
The present invention now will be described more fully hereinafter with reference to the accompanying drawings, in which embodiments of the invention are shown. This invention should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. Like numbers refer to like elements throughout.
Furthermore, the various layers and regions illustrated in the figures are illustrated schematically. As will also be appreciated by those of skill in the art, while the present invention is described with respect to semiconductor wafers and diced chips, such chips may be diced into arbitrary sizes. Accordingly, the present invention is not limited to the relative size and spacing illustrated in the accompanying figures. In addition, certain features of the drawings such as layer thicknesses and feature sizes are illustrated in exaggerated dimensions for clarity of drawing and ease of explanation.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the singular forms “a”, “an” and “the” are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms “comprises” and/or “comprising,” when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.
It will be understood that when an element or layer is referred to as being “on”, “connected to” or “coupled to” another element or layer, it can be directly on, connected or coupled to the other element or layer or intervening elements or layers may be present. In contrast, when an element is referred to as being “directly on,” “directly connected to” or “directly coupled to” another element or layer, there are no intervening elements or layers present. Like numbers refer to like elements throughout. As used herein, the term “and/or” includes any and all combinations of one or more of the associated listed items.
It will be understood that, although the terms first, second, etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present invention.
Furthermore, relative terms, such as “lower” or “bottom” and “upper” or “top,” may be used herein to describe one element's relationship to another elements as illustrated in the Figures. It will be understood that relative terms are intended to encompass different orientations of the device in addition to the orientation depicted in the Figures. For example, if the device in the Figures is turned over, elements described as being on the “lower” side of other elements would then be oriented on “upper” sides of the other elements. The exemplary term “lower”, can therefore, encompasses both an orientation of “lower” and “upper,” depending of the particular orientation of the figure. Similarly, if the device in one of the figures is turned over, elements described as “below” or “beneath” other elements would then be oriented “above” the other elements. The exemplary terms “below” or “beneath” can, therefore, encompass both an orientation of above and below.
As used herein in connection with the thickness of ohmic contacts, the term “about” means within a tolerance of +/−1 Å.
Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and this specification and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
Embodiments of the present invention are described herein with reference to cross-section illustrations that are schematic illustrations of idealized embodiments of the present invention. As such, variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and/or tolerances, are to be expected. Thus, embodiments of the present invention should not be construed as limited to the particular shapes of regions illustrated herein but are to include deviations in shapes that result, for example, from manufacturing. For example, a region illustrated as a rectangle will, typically, have rounded, curved or graded features at its edges rather than a discrete change from one region to the next. Thus, the regions illustrated in the figures are schematic in nature and their shapes are not intended to illustrate the precise shape of a region of a device and are not intended to limit the scope of the present invention.
Embodiments of the invention now will be described, generally with reference to gallium nitride-based light emitting diodes on silicon carbide-based substrates. However, it will be understood by those having skill in the art that many embodiments of the invention may be employed with many different combinations of substrate and epitaxial layers. For example, combinations can include AlGaInP diodes on GaP substrates; InGaAs diodes on GaAs substrates; AlGaAs diodes on GaAs substrates; SiC diodes on SiC or sapphire (Al2O3) substrates; and/or nitride-based diodes on gallium nitride, silicon carbide, aluminum nitride, sapphire, zinc oxide and/or other substrates.
GaN-based light emitting devices typically comprise an insulating, semiconducting or conductive substrate such as SiC or sapphire on which a plurality of GaN-based epitaxial layers are deposited. The epitaxial layers comprise an active region having a p-n junction that emits light when energized.
Although various embodiments of LEDs disclosed herein include a substrate, it will be understood by those skilled in the art that the crystalline epitaxial growth substrate on which the epitaxial layers comprising an LED are grown may be removed, and the freestanding epitaxial layers may be mounted on a substitute carrier substrate or submount which may have better thermal, electrical, structural and/or optical characteristics than the original substrate. The invention described herein is not limited to structures having crystalline epitaxial growth substrates and may be utilized in connection with structures in which the epitaxial layers have been removed from their original growth substrates and bonded to substitute carrier substrates.
Light emitting devices for use in embodiments of the present invention may be gallium nitride based light emitting diodes or lasers fabricated on a silicon carbide substrate such as those devices manufactured and sold by Cree, Inc. of Durham, N.C. For example, the present invention may be suitable for use with LEDs and/or lasers as described in U.S. Pat. Nos. 6,740,906, 6,734,033, 6,664,560, 6,201,262, 6,187,606, 6,120,600, 5,912,477, 5,739,554, 5,631,190, 5,604,135, 5,523,589, 5,416,342, 5,393,993, 5,338,944, 5,210,051, 5,027,168, 5,027,168, 4,966,862 and/or 4,918,497, the disclosures of which are incorporated herein by reference as if set forth fully herein. Other suitable LEDs and/or lasers are described in U.S. Patent Publication No. 2003/0006418, entitled “GROUP III NITRIDE BASED LIGHT EMITTING DIODE STRUCTURES WITH A QUANTUM WELL AND SUPERLATTICE, GROUP III NITRIDE BASED QUANTUM WELL STRUCTURES AND GROUP III NITRIDE BASED SUPERLATTICE STRUCTURES,” and U.S. patent application Ser. No. 10/899,791, entitled “GROUP III NITRIDE BASED QUANTUM WELL LIGHT EMITTING DEVICE STRUCTURES WITH AN INDIUM CONTAINING CAPPING STRUCTURE,” filed Jul. 27, 2004, U.S. patent application Ser. No. 10/881,814 entitled “LIGHT EMITTING DEVICES HAVING CURRENT BLOCKING STRUCTURES AND METHODS OF FABRICATING LIGHT EMITTING DEVICES HAVING CURRENT BLOCKING STRUCTURES,” filed Jun. 30, 2004 and/or U.S. patent application Ser. No. 10/899,793 entitled “LIGHT EMITTING DEVICES HAVING A REFLECTIVE BOND PAD AND METHODS OF FABRICATING LIGHT EMITTING DEVICES HAVING A REFLECTIVE BOND PAD,” filed Jul. 27, 2004, the disclosures of which are incorporated herein as if set forth fully.
In particular embodiments of the present invention, the light emitting devices may include a p-electrode that provides a reflecting layer to reflect light generated in the active region back through the device. Reflective p-electrodes and related structures are described in U.S. Patent Publication No. 2003/0123164 entitled “LIGHT EMITTING DIODES INCLUDING SUBSTRATE MODIFICATIONS FOR LIGHT EXTRACTION AND MANUFACTURING METHODS THEREFOR” and in U.S. Patent Publication No. 2003/0168663 entitled “REFLECTIVE OHMIC CONTACTS FOR SILICON CARBIDE INCLUDING A LAYER CONSISTING ESSENTIALLY OF NICKEL, METHODS OF FABRICATING SAME, AND LIGHT EMITTING DEVICES INCLUDING THE SAME,” the disclosures of which are hereby incorporated by reference as if set forth fully herein.
As used herein the term “ohmic contact” refers to contacts where an impedance associated therewith is substantially given by the relationship of Impedance=V/I, where V is a voltage across the contact and I is the current, at substantially all expected operating frequencies (i.e., the impedance associated with the ohmic contact is substantially the same at all operating frequencies). For example, in some embodiments according to the invention, an ohmic contact can be a contact with a specific contact resistivity of less than about 10−03 ohm-cm2 and, in some embodiments less than about 10−04 ohm-cm2. Thus, a contact that is rectifying or that has a high specific contact resistivity, for example, a specific contact resistivity of greater than about 10−03 ohm-cm2, is not an ohmic contact as that term is used herein.
An LED may be mounted substrate side down onto a submount such as a metal plate, printed circuit board or lead frame (all of which are referred to herein as a “submount”).
In order to reduce and/or minimize absorption of light by the p-electrode 18, the thickness of the p-electrode can be reduced below 25 Å in accordance with some embodiments of the present invention. Some embodiments of the present invention provide an ultrathin p-contact metal that may be deposited in a way that is reproducible, controllable, and manufacturable. In some embodiments, the ohmic contact 18 comprises platinum. Other materials may be used for the ohmic contact 18. For example, the ohmic contact 18 may comprise rhodium, zinc oxide, palladium, palladium oxide, titanium, nickel/gold, nickel oxide/gold, nickel oxide/platinum and/or titanium/gold. In some embodiments, the ohmic contact 18 has an average thickness less than 25 Å. In further embodiments, the ohmic contact 18 has an average thickness less than 20 Å. In some embodiments, the ohmic contact 18 may have an average thickness between 13 and 18 Å. In further embodiments, the ohmic contact 18 may have an average thickness of about 15 Å+/−1 Å. In some embodiments, the ohmic contact 18 has an average thickness less than 10 Å. In some embodiments, the ohmic contact 18 has an average thickness less than 5 Å, and in further embodiments, the ohmic contact 18 has an average thickness less than 3 Å. In still further embodiments, the ohmic contact has an average thickness of about 1 Å.
It will be understood by those skilled in the art that film thicknesses less than 10 Å, and in particular film thicknesses less than 5 Å, may represent partial or sub-monolayer coverage of the surface. Thus, even though the resulting layer is referred to as a “film”, the film may only partially cover the surface of the p-type GaN layer. Furthermore, some of uncovered portions of the p-type GaN layer can be characterized as “exposed” as those portions are not covered by a film thicker than the minimum average thickness of the metal ohmic contact (e.g., the exposed portions are covered by a sub-monolayer of the metal ohmic contact).
Thus, some embodiments of the present invention provide a contact layer with coverage of less than 70%. Further embodiments of the present invention provide a contact layer with coverage of less than 50%. Still further embodiments of the present invention provide a contact layer with coverage of less than 30%. Additional embodiments of the present invention provide a contact layer with coverage of less than 20%. As used herein, when the metal ohmic contact is described as covering “only” a particular percentage of the p-type nitride layer (e.g., 70%) it will be understood that the remaining portion (e.g., 30%) of the p-type nitride layer can be un covered (i.e., exposed) or covered by portions of the metal ohmic contact which are less than the average thickness of the metal ohmic contact covering the p-type nitride layer. Furthermore, these percentages of coverage are not to be interpreted to include portions of the p-type nitride which are not beneath the outer edges of the metal ohmic contact (e.g., such as an oversized p-type nitride layer).
Ohmic contacts according to some embodiments of the present invention may be formed by electron beam (e-beam) evaporation or any other suitable techniques for controllably forming atomically thin metallic films. For example, it may be possible to form the ohmic contacts by electroplating provided adequate process control is maintained. In electron beam evaporation, a metal source target is heated in a vacuum chamber to the point of vaporization by a high intensity electron beam which melts a region of the target. An epitaxial wafer placed within the chamber is controllably coated with vaporized metal. E-beam evaporation and other film deposition methods are described in Chapter 6 of I
The deposition rate of the process may be controlled by changing the current and energy of the electron beam. In some embodiments, the deposition rate is maintained at a low rate, e.g. in the range of 0.1-0.5 Å per second in order to maintain adequate control of film thickness. In addition, the film deposition may be controlled during deposition by monitoring the transmission properties of a witness slide on which the ohmic metal film is simultaneously deposited. The witness slide may be sapphire, quartz, or any other optically transmissive material on which a metal film may be deposited. The transmission sensitivity to the metal thickness is dependent upon the wavelength of the light used in the monitoring process. Namely, the transmission sensitivity may be enhanced at shorter wavelengths. Accordingly, in some embodiments, the transmission properties of a sapphire witness slide are measured during or after film deposition by means of a monitoring system employing a UV source capable of emitting light at wavelengths of 350 nm or less, such as a UV spectrophotometer. The slow deposition rate may allow for reproducible and controllable deposition of the thin layer.
The ohmic contact 18 may have a thickness range of 1-25 Å. For platinum contacts to flip-chip devices, the preferred thickness is 1-5 Å. Flip-chip devices typically include additional metal layers blanket deposited on the ohmic contact. For example, there may be a reflector layer 30 illustrated in
Once deposited, the ohmic contact 18 provides an ohmic or non-rectifying contact “as deposited.” That is, no further processing or annealing may be required in order to provide a quasi-ideal electrical contact to the p-type GaN layer 16. However, in some cases it may be necessary or desirable to anneal the ohmic contact 18 or perform other post-deposition processing in order to improve its ohmic characteristics (such as to reduce the specific contact resistance of the contact layer, for example).
In some embodiments, methods according to the present invention include forming an n-type epitaxial layer on a substrate, forming a p-type epitaxial layer on the n-type epitaxial layer to thereby provide a device precursor structure, placing the device precursor structure in an e-beam evaporation system, placing a witness slide in the evaporation system, and forming a layer of platinum on the device precursor structure and the witness slide while simultaneously monitoring the transmissivity of the metal film on the witness slide. In some embodiments, deposition of the ohmic contact metal may be halted before the normalized transmissivity of the metal film on the witness slide falls below 98% at a measurement wavelength of 350 nm. In other embodiments, deposition of the ohmic contact metal may be halted before the normalized transmissivity of the metal film on the witness slide falls below 96% at a measurement wavelength of 350 nm. In further embodiments, deposition of the ohmic contact metal may be halted before the normalized transmissivity of the metal film on the witness slide falls below 92% at a measurement wavelength of 350 nm.
As illustrated in
Accordingly, in some embodiments, the transmission properties of a sapphire witness slide are monitored during film deposition by means of a monitoring system employing a UV source capable of emitting light at wavelengths of 350 nm or less. By monitoring in situ the transmissivity of a metal film formed on a calibrated witness slide, the deposition process may be halted before or after the transmissivity of the metal film reaches a predetermined threshold level. Accordingly, the deposition of extremely thin metal films may be controlled with a high degree of precision according to embodiments of the invention.
In some embodiments, deposition of the ohmic contact may be halted before the normalized transmissivity of the metal film on the witness slide falls below 98% at a measurement wavelength of 350 nm. In other embodiments, deposition of the ohmic contact may be halted before the normalized transmissivity of the metal film on the witness slide falls below 96% at a measurement wavelength of 350 nm. In further embodiments, deposition of the ohmic contact may be halted before the normalized transmissivity of the metal film on the witness slide falls below 92% at a measurement wavelength of 350 nm.
Other methods of monitoring the thickness of the deposited metal film may be employed. For example, other physical, electrical or optical characteristics of the film (or the material on which the film is deposited) which vary according to film thickness may be measured and compared against known standards to determine film thickness. Such characteristics may include, but are not limited to, sheet resistivity, capacitance, or reflectance of the film. In one embodiment, the resonant frequency of a quartz crystal coated with the evaporating material during deposition is monitored. The resonant frequency of the crystal shifts in proportion to the thickness of the deposited film and may provide a sufficiently accurate measure of film thickness. See Chapter 6 of INTRODUCTION TO MICROELECTRONIC FABRICATION by R. Jaeger (2nd Ed. 2002).
In order to facilitate current spreading, the bond pad may include one or more current spreading fingers extending across portions of the ohmic contact. As illustrated in
In order to reduce or minimize absorption of light by the p-electrode 18 so that more light can be reflected by reflector 30, the thickness of the p-electrode is reduced below 25 Å in accordance with the invention. In some embodiments, the p-electrode 18 comprises platinum. Other materials may be used for the ohmic contact 18. For example, the ohmic contact 18 may comprise rhodium, zinc oxide, palladium, palladium oxide, titanium, nickel/gold, nickel oxide/gold, nickel oxide/platinum and/or titanium/gold. In some embodiments, the ohmic contact 18 has an average thickness less than 25 Å. In further embodiments, the ohmic contact 18 has an average thickness less than 20 Å. In some embodiments, the ohmic contact 18 may have an average thickness between 13 and 18 Å. In further embodiments, the ohmic contact 18 may have an average thickness of about 15 Å. In some embodiments, the ohmic contact 18 has an average thickness less than 10 Å. In some embodiments, the ohmic contact 18 has an average thickness less than 5 Å, and in further embodiments, the ohmic contact 18 has an average thickness less than 3 Å. In still further embodiments, the ohmic contact 18 has an average thickness of about 1 Å. In some embodiments, the ohmic contact 18 has an average thickness less than 10 Å and a coverage of less than about 70%. In some embodiments, the ohmic contact 18 has an average thickness less than 5 Å and a coverage of less than about 50% and in further embodiments, the ohmic contact 18 has an average thickness less than 3 Å and a coverage of less than about 30% In still further embodiments, the ohmic contact 18 has an average thickness of about 1 Å and a coverage of less than about 15%.
The reflector 30 preferably is thicker than about 300 Å and preferably comprises aluminum and/or silver. Embodiments of
Embodiments of the invention may reduce the optical losses in the LEDs that result from absorption in the p-contact metal. The p-contact metal may be required to make an ohmic contact with a minimal voltage drop, but typically the contact metal introduces optical losses. Embodiments of the present invention may provide a contact with low optical loss, low contact resistance, and good metal-semiconductor adhesion suitable for high brightness nitride LEDs that employ either reflective or transparent p-side metal stacks. By reducing the p-contact metal to an extremely thin layer (e.g. 1.5 vs 25 Å of Pt), light output of a device may be increased substantially. For example, an improvement in light output of approximately 10% was achieved in a 300×300 μm square chip and an improvement of approximately 20% was achieved in a 900×900 μm square chip. The increased brightness levels may speed the introduction of solid state lighting sources into products for general illumination and other specialty illumination applications, such as automotive headlamps.
In some embodiments, deposition of the ohmic contact metal may be halted before the normalized transmissivity of the metal film on the witness slide falls below 98% at a measurement wavelength of 350 nm. In other embodiments, deposition of the ohmic contact metal may be halted before the normalized transmissivity of the metal film on the witness slide falls below 96% at a measurement wavelength of 350 nm. In further embodiments, deposition of the ohmic contact metal may be halted before the normalized transmissivity of the metal film on the witness slide falls below 92% at a measurement wavelength of 350 nm.
Some embodiments of the invention include fabricating a GaN based LED precursor structure, placing the precursor structure along with a test substrate such as a witness slide into a metal film deposition system, depositing a metal film on the precursor structure and the test substrate for a predetermined time at a predetermined deposition rate, and measuring the transmissivity of the film on the test substrate. If the transmissivity of the film is below a predetermined threshold (indicating that the metal film is too thick), the metal film is removed from the precursor structure, the precursor is placed back into the film deposition system, and a metal film is deposited on the precursor structure for a second predetermined time and/or deposition rate. The process may be repeated any number of times until an acceptable thickness has been deposited.
As illustrated in
In other embodiments illustrated in
In further embodiments, the monitoring system may provide a signal output to the film deposition system when the film thickness reaches a threshold level. The film deposition system may stop the deposition process in response to the signal output from the monitoring system to provide automatic closed-loop control of the deposition process.
An e-beam generator 60 within the vacuum chamber generates a beam of electrons at a predetermined energy and directs the beam toward source target 64. E-beam generator 60 is controlled by e-beam controller 62. When the electron beam generated by e-beam generator 60 strikes the source target 64, source material evaporates from source target 64 and redeposits on wafer 56 and witness slide 70. A sensor 66 which may be mounted inside or outside the vacuum chamber measures the thickness of the deposited film by monitoring physical, electrical or optical characteristics of the witness slide which vary according to film thickness may be measured and compared against known standards to determine film thickness. As discussed above, such characteristics may include transmissivity, reflectivity, conductivity, resonant frequency or other characteristics. Sensor 66 is controlled by sensor controller 68 (which may in practical applications be the same as e-beam controller 62). When sensor 66 detects that the deposited film thickness has reached a predetermined threshold, the monitoring system may provide a signal output to the e-beam controller 62, causing the e-beam controller to stop the deposition process. Accordingly, a system 50 in accordance with embodiments of the invention may provide automatic closed-loop control of the deposition process.
Contact layers were fabricated as described above at thicknesses of 25 Å, 10 Å, 3 Å and 1 Å. The contact layers were Pt. The 25 Å layer was assumed to be a continuous layer of Pt. STEM images were obtained for the 10 Å, 3 Å and 1 Å layers. The STEM images are shown in
TABLE 1
STEM Analysis
Sample
1500 kX B/W Ratio
Approximate Pt Coverage
10 Å
0.6406
0.61
3 Å
1.9924
0.33
1 Å
11
0.08
Auger surface analysis was also performed on the Pt layers. The results of the Auger surface analysis is shown in Table 2.
TABLE 2
Auger Analysis
Auger Analysis
Pt Coverage
Sample
% Pt
% Ga
% N
% C
% O
% Cl
X Å/25 Å
1 Å
7.7
34.3
19.1
30.6
7.1
1.3
0.13
3 Å
16.3
27.7
14.4
33.9
6.7
1.1
0.28
5 Å
27.3
21.0
10.6
34.5
5.4
1.2
0.47
10 Å
39.4
14.2
3.8
36.9
5.4
0.2
0.67
25 Å
58.7
2.0
2.3
33.0
3.7
0.3
1
As is seen in Table 2, assuming that the 25 Å layer is a continuous layer, then by Auger analysis, the 10 Å layer has about 67% coverage, the 5 Å layer has about 47% coverage, the 3 Å layer has about 28% coverage and the 1 Å layer has about 13% coverage. Accordingly, in some embodiments according to the present invention, the average thickness of the metal ohmic contact is related to the % of the p-type nitride layer covered by the metal ohmic contact.
Many alterations and modifications may be made by those having ordinary skill in the art, given the benefit of the present disclosure, without departing from the spirit and scope of the invention. Therefore, it must be understood that the illustrated embodiments have been set forth only for the purposes of example, and that it should not be taken as limiting the invention as defined by the following claims. The following claims are, therefore, to be read to include not only the combination of elements which are literally set forth but all equivalent elements for performing substantially the same function in substantially the same way to obtain substantially the same result. The claims are thus to be understood to include what is specifically illustrated and described above, what is conceptually equivalent, and also what incorporates the essential idea of the invention.
Emerson, David, Bergmann, Michael, Ibbetson, James, Bharathan, Jayesh, Li, Ting, Haberern, Kevin, Raffetto, Mark
| Patent | Priority | Assignee | Title |
| Patent | Priority | Assignee | Title |
| 4918497, | Dec 14 1988 | Cree, Inc | Blue light emitting diode formed in silicon carbide |
| 4966862, | Aug 28 1989 | Cree, Inc | Method of production of light emitting diodes |
| 5027168, | Dec 14 1988 | Cree, Inc | Blue light emitting diode formed in silicon carbide |
| 5210051, | Mar 27 1990 | Cree, Inc | High efficiency light emitting diodes from bipolar gallium nitride |
| 5338944, | Sep 22 1993 | Cree, Inc | Blue light-emitting diode with degenerate junction structure |
| 5393993, | Dec 13 1993 | Cree, Inc | Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices |
| 5416342, | Jun 23 1993 | Cree, Inc | Blue light-emitting diode with high external quantum efficiency |
| 5523589, | Sep 20 1994 | Cree, Inc | Vertical geometry light emitting diode with group III nitride active layer and extended lifetime |
| 5604135, | Aug 12 1994 | Cree, Inc | Method of forming green light emitting diode in silicon carbide |
| 5631190, | Oct 07 1994 | Cree, Inc | Method for producing high efficiency light-emitting diodes and resulting diode structures |
| 5739554, | May 08 1995 | Cree, Inc | Double heterojunction light emitting diode with gallium nitride active layer |
| 5912477, | Oct 07 1994 | Cree, Inc | High efficiency light emitting diodes |
| 6120600, | May 08 1995 | Cree, Inc | Double heterojunction light emitting diode with gallium nitride active layer |
| 6187606, | Oct 07 1997 | Cree, Inc | Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlayer structure |
| 6201262, | Oct 07 1997 | Cree, Inc | Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlay structure |
| 6664560, | Jun 15 2001 | Cree, Inc | Ultraviolet light emitting diode |
| 6734033, | Jun 15 2001 | Cree, Inc. | Ultraviolet light emitting diode |
| 6740906, | Jul 23 2001 | CREE LED, INC | Light emitting diodes including modifications for submount bonding |
| 20020117672, | |||
| 20030006418, | |||
| 20030006422, | |||
| 20030122144, | |||
| 20030123164, | |||
| 20030168663, | |||
| 20030209720, | |||
| 20050230701, | |||
| 20070178689, | |||
| 20080048172, | |||
| 20090263922, | |||
| CN1046375, | |||
| JP2001196631, | |||
| JP2003534668, | |||
| JP200463732, | |||
| JP2124406, |
| Executed on | Assignor | Assignee | Conveyance | Frame | Reel | Doc |
| Jul 27 2005 | Cree, Inc. | (assignment on the face of the patent) | / |
| Date | Maintenance Fee Events |
| Date | Maintenance Schedule |
| Oct 25 2014 | 4 years fee payment window open |
| Apr 25 2015 | 6 months grace period start (w surcharge) |
| Oct 25 2015 | patent expiry (for year 4) |
| Oct 25 2017 | 2 years to revive unintentionally abandoned end. (for year 4) |
| Oct 25 2018 | 8 years fee payment window open |
| Apr 25 2019 | 6 months grace period start (w surcharge) |
| Oct 25 2019 | patent expiry (for year 8) |
| Oct 25 2021 | 2 years to revive unintentionally abandoned end. (for year 8) |
| Oct 25 2022 | 12 years fee payment window open |
| Apr 25 2023 | 6 months grace period start (w surcharge) |
| Oct 25 2023 | patent expiry (for year 12) |
| Oct 25 2025 | 2 years to revive unintentionally abandoned end. (for year 12) |