A wiring board comprises a first pad which is provided on a first surface side of a substrate and on which a first electronic component is to be mounted, and a second pad which is provided on the first surface side of the substrate and on which a second electronic component having a larger amount of heat generation in an operation than that of the first electronic component is to be mounted, a first through electrode which penetrates the substrate and has one of ends connected electrically to the first pad, a second through electrode which penetrates the substrate and has one of ends connected electrically to the second pad, a through trench penetrating the substrate in a portion positioned between a first mounting region for the first electronic component and a second mounting region for the second electronic component, and a heat intercepting member provided in the through trench.
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1. A wiring board comprising:
a substrate formed by a semiconductor material, a first pad which is provided on a first surface side of the substrate and on which a first electronic component is to be mounted, and a second pad which is provided on the first surface side of the substrate and on which a second electronic component having a larger amount of heat generation in an operation than that of the first electronic component is to be mounted;
a first through electrode which penetrates the substrate and has one end connected electrically to the first pad;
a second through electrode which penetrates the substrate and has one end connected electrically to the second pad;
a through trench which penetrates the substrate and which is provided on the substrate in a portion positioned between a first mounting region on which the first electronic component is to be mounted and a second mounting region on which the second electronic component is to be mounted; and
a heat intercepting member which is provided in the through trench,
wherein a thermal conductivity of the heat intercepting member is less than a thermal conductivity of the substrate.
9. A wiring board comprising:
a substrate formed by a semiconductor material, a first pad which is provided on a first surface side of the substrate and on which a first electronic component is to be mounted, and a second pad which is provided on the first surface side of the substrate and on which a second electronic component having a larger amount of heat generation in an operation than that of the first electronic component is to be mounted;
a first through electrode which penetrates the substrate and has one end connected electrically to the first pad;
a second through electrode which penetrates the substrate and has one end connected electrically to the second pad;
a trench which does not penetrate the substrate and which is provided on the substrate in a portion positioned at an opposite side to the first surface in the substrate in a portion positioned between a first mounting region on which the first electronic component is to be mounted and a second mounting region on which the second electronic component is to be mounted; and
a heat intercepting member which is provided in the trench,
wherein a thermal conductivity of the heat intercepting member is less than a thermal conductivity of the substrate.
2. The wiring board according to
3. The wiring board according to
4. The wiring board according to
a thermal conductivity of the heat intercepting member is in the range of 0.1 to 1.0 W/m·K, and
a thermal conductivity of the substrate is in the range of 150 to 170 W/m·K.
6. The wiring board according to
7. The wiring board according to
8. The wiring board according to
10. The wiring board according to
11. The wiring board according to
12. The wiring board according to
a thermal conductivity of the heat intercepting member is in the range of 0.1 to 1.0 W/m·K, and
a thermal conductivity of the substrate is in the range of 150 to 170 W/m·K.
14. The wiring board according to
15. The wiring board according to
16. The wiring board according to
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This application claims priority to Japanese Patent Application No. 2008-270530, filed Oct. 21, 2008, in the Japanese Patent Office. The Japanese Patent Application No. 2008-270530 is incorporated by reference in its entirety.
The present disclosure relates to a wiring board and a method of manufacturing the wiring board. More particularly, the present disclosure relates to a wiring board on which a first electronic component and a second electronic component having a larger amount of heat generation in an operation than that of the first electronic component are to be mounted, and a method of manufacturing the wiring board.
There has been a semiconductor device including a plurality of electronic components and a wiring board on which the electronic components are to be mounted (see
With reference to
The wiring board 201 has a substrate 211 formed by a semiconductor material, an insulating film 212, through electrodes 213 and 214, pads 216 and 217, a wiring 218, external connecting pads 221 and 222, and solder resist layers 225 and 226.
The substrate 211 is plate-shaped and has through holes 231 and 232. The insulating film 212 is formed to cover an upper surface 211A and a lower surface 211B in the substrate 211 and a surface of the substrate 211 in corresponding parts to side surfaces of the through holes 231 and 232.
The through electrode 213 is provided in the through hole 231 in which the insulating film 212 is formed. The through electrode 214 is provided in the through hole 232 in which the insulating film 212 is formed.
The pad 216 is provided on the insulating film 212 formed on the upper surface 211A of the substrate 211. The pad 216 is connected to an upper end of the through electrode 213. The pad 216 has a connecting surface 216A on which the electronic component 202 is to be mounted.
The pad 217 is provided on the insulating film 212 formed on the upper surface 211A of the substrate 211. The pad 217 is connected to an upper end of the through electrode 214. The pad 217 has a connecting surface 217A on which the electronic component 203 is to be mounted.
The wiring 218 is provided on the insulating film 212 formed on the upper surface 211A of the substrate 211. The wiring 218 connects the pads 216 and 217 to each other.
The external connecting pad 221 is provided on a lower surface of the insulating film 212 formed on the lower surface 211B of the substrate 211. The external connecting pad 221 is connected to a lower end of the through electrode 213. Consequently, the external connecting pad 221 is electrically connected to the pad 216 through the through electrode 213. The external connecting pad 221 has a connecting surface 221A on which the external connecting terminal 205 is to be provided.
The external connecting pad 222 is provided on the lower surface of the insulating film 212 formed on the lower surface 211B of the substrate 211. The external connecting pad 222 is connected to a lower end of the through electrode 214. Consequently, the external connecting pad 222 is electrically connected to the pad 217 through the through electrode 214. The external connecting pad 222 has a connecting surface 222A on which the external connecting terminal 206 is to be provided.
The solder resist layer 225 is provided on the insulating film 212 to cover the pads 216 and 217 and the wiring 218 in parts excluding the connecting surfaces 216A and 217A. The solder resist layer 225 has an opening portion 225A for exposing the connecting surface 216A and an opening portion 225B for exposing the connecting surface 217A.
The solder resist layer 226 is provided on the lower surface of the insulating film 212 to cover the external connecting pads 221 and 222 in parts excluding the connecting surfaces 221A and 222A. The solder resist layer 226 has an opening portion 226A for exposing the connecting surface 221A and an opening portion 226B for exposing the connecting surface 222A.
The electronic component 202 is mounted on the pad 216 by flip chip bonding. For the electronic component 202, for example, it is possible to use a semiconductor chip (for instance, a flash memory). In the case in which the electronic component 202 is the flash memory, an amount of heat generation in an operation of the electronic component 202 is 0.5 W, for example.
The electronic component 203 is mounted on the pad 217 by flip chip bonding. The electronic component 203 is electrically connected to the electronic component 202 through the wiring pattern 218. The electronic component 203 has a larger amount of heat generation in an operation than that of the electronic component 202. For the electronic component 203, for example, it is possible to use a semiconductor chip (for instance, a semiconductor chip for a CPU). In the case in which the semiconductor chip for a CPU is used as the electronic component 203, the amount of heat generation in the operation of the electronic component 203 is 30 W, for example.
The external connecting terminal 205 is provided on the external connecting pad 221. The external connecting terminal 206 is provided on the external connecting pad 222. The external connecting terminals 205 and 206 are electrically connected to a pad (not shown) provided on a mounting substrate such as a mother board (not shown) when the semiconductor device 200 is to be mounted on the mounting substrate (for example, see Patent Document 1).
[Patent Document 1] JP-A-2006-135174 Publication
However, the substrate 211 constituted by a semiconductor material is apt to transfer a heat. For this reason, a heat in the operation of the electronic component 203 mounted on the wiring board 201 is transferred to the electronic component 202 through the substrate 211. Consequently, there is a problem in that the electronic component 202 carries out a malfunction or the electronic component 202 cannot exhibit an original performance.
Exemplary embodiments of the present invention provide a wiring board capable of preventing a transfer, to a first electronic component, of a heat generated by a second electronic component having a larger amount of heat generation in an operation than that of the first electronic component, and a method of manufacturing the wiring board.
According to a first aspect of the invention, a wiring board comprises:
a substrate formed by a semiconductor material, a first pad which is provided on a first surface side of the substrate and on which a first electronic component is to be mounted, and a second pad which is provided on the first surface side of the substrate and on which a second electronic component having a larger amount of heat generation in an operation than that of the first electronic component is to be mounted;
a first through electrode which penetrates the substrate and has one of ends connected electrically to the first pad;
a second through electrode which penetrates the substrate and has one of ends connected electrically to the second pad;
a through trench which penetrates the substrate and which is provided on the substrate in a portion positioned between a first mounting region on which the first electronic component is to be mounted and a second mounting region on which the second electronic component is to be mounted; and
a heat intercepting member which is provided in the through trench.
According to the invention, the through trench penetrating the substrate is provided on the substrate in the portion positioned between the mounting region for the first electronic component and the mounting region for the second electronic component having the larger amount of heat generation in the operation than that of the first electronic component, and the heat intercepting member is provided in the through trench. Consequently, it is possible to intercept the heat generated from the second electronic component in the operation by the heat intercepting member. Thus, the heat generated from the second electronic component in the operation can be prevented from being transferred to the first electronic component through the substrate in the corresponding portion to the first mounting region.
According to a second aspect of the invention, a wiring board comprises:
a substrate formed by a semiconductor material, a first pad which is provided on a first surface side of the substrate and on which a first electronic component is to be mounted, and a second pad which is provided on the first surface side of the substrate and on which a second electronic component having a larger amount of heat generation in an operation than that of the first electronic component is to be mounted;
a first through electrode which penetrates the substrate and has one of ends connected electrically to the first pad;
a second through electrode which penetrates the substrate and has one of ends connected electrically to the second pad;
a trench which does not penetrate the substrate and which is provided on the substrate in a portion positioned at an opposite side to the first surface in the substrate in a portion positioned between a first mounting region on which the first electronic component is to be mounted and a second mounting region on which the second electronic component is to be mounted; and
a heat intercepting member which is provided in the trench.
According to the invention, the trench which does not penetrate the substrate is provided on the substrate in the portion positioned at the opposite side to the first surface in the substrate in the portion positioned between the first mounting region on which the first electronic component is to be mounted and the second mounting region on which the second electronic component is to be mounted, and the heat intercepting member is provided in the trench. Consequently, it is possible to intercept the heat generated from the second electronic component in the operation by the heat intercepting member. Thus, the heat generated from the second electronic component in the operation can be prevented from being transferred to the first electronic component through the substrate in the corresponding portion to the first mounting region.
According to a third aspect of the invention, a method of manufacturing a wiring board, including:
a substrate formed by a semiconductor material, a first pad which is provided on a first surface side of the substrate and on which a first electronic component is to be mounted, and a second pad which is provided on the first surface side of the substrate and on which a second electronic component having a larger amount of heat generation in an operation than that of the first electronic component is to be mounted;
a first through electrode which penetrates the substrate and has one of ends connected electrically to the first pad; and
a second through electrode which penetrates the substrate and has one of ends connected electrically to the second pad,
the method comprises:
According to the invention, the first and second opening portions which do not penetrate the base material and the trench which is positioned between the first mounting region for mounting the first electronic component thereon and the second mounting region for mounting the second electronic component thereon and does not penetrate the base material are formed on the base material from the first surface side of the base material at the same time. Subsequently, the heat intercepting member for intercepting a heat is formed in the trench. Then, the conductive members serving as the base metals of the first and second through electrodes are formed in the first and second opening portions. Thereafter, the first and second pads are formed. Next, the base material is thinned until the conductive member and the heat intercepting member are exposed from the second surface side of the base material which is positioned on the opposite side to the first surface. Consequently, the heat intercepting member penetrating the base material and serving to intercept the heat generated from the second electronic component in the operation is formed on the base material in the portion positioned between the first mounting region for mounting the first electronic component thereon and the second mounting region for mounting the second electronic component thereon. Therefore, the heat generated from the second electronic component in the operation can be prevented from being transferred to the first electronic component through the substrate in the corresponding portion to the first mounting region.
According to a fourth aspect of the invention, a method of manufacturing a wiring board, including:
a substrate formed by a semiconductor material, a first pad which is provided on a first surface side of the substrate and on which a first electronic component is to be mounted, and a second pad which is provided on the first surface side of the substrate and on which a second electronic component having a larger amount of heat generation in an operation than that of the first electronic component is to be mounted;
a first through electrode which penetrates the substrate and has one of ends connected electrically to the first pad; and
a second through electrode which penetrates the substrate and has one of ends connected electrically to the second pad,
the method comprises:
According to the invention, the trench which does not penetrate the base material is formed from the first surface side of the base material on the base material in the portion positioned between the first mounting region on which the first electronic component is to be mounted and the second mounting region on which the second electronic component is to be mounted. Subsequently, the heat intercepting member for intercepting a heat is formed in the trench. Then, the first opening portion which corresponds to the forming position for the first through electrode and does not penetrate the base material and the second opening portion which corresponds to the forming position for the second through electrode and does not penetrate the base material are formed on the base material from the first surface side of the base material at the same time. Thereafter, the conductive members serving as the base metals of the first and second through electrodes are formed in the first and second opening portions. Next, the first and second pads are formed. Subsequently, the base material is thinned until the conductive member and the heat intercepting member are exposed from the second surface side of the base material which is positioned on the opposite side to the first surface. Consequently, the heat intercepting member penetrating the base material and serving to intercept the heat generated from the second electronic component in the operation is formed on the base material in the portion positioned between the first mounting region on which the first electronic component is to be mounted and the second mounting region on which the second electronic component is to be mounted. Therefore, the heat generated from the second electronic component in the operation can be prevented from being transferred to the first electronic component through the substrate in the corresponding portion to the first mounting region.
According to a fifth aspect of the invention, a method of manufacturing a wiring board, including:
a substrate formed by a semiconductor material, a first pad which is provided on a first surface side of the substrate and on which a first electronic component is to be mounted, and a second pad which is provided on the first surface side of the substrate and on which a second electronic component having a larger amount of heat generation in an operation than that of the first electronic component is to be mounted;
a first through electrode which penetrates the substrate and has one of ends connected electrically to the first pad; and
a second through electrode which penetrates the substrate and has one of ends connected electrically to the second pad,
the method comprises:
According to the invention, the first and second through holes penetrating the base material and the through trench positioned between the first mounting region for mounting the first electronic component thereon and the second mounting region for mounting the second electronic component thereon and penetrating the base material are formed on the base material at the same time. Subsequently, the heat intercepting member for intercepting a heat is formed in the through trench. Then, the first and second through holes are filled with the conductive member to form the first and second through electrodes. Thereafter, the first and second pads are formed. Consequently, the heat intercepting member penetrating the base material and serving to intercept the heat generated from the second electronic component in the operation is formed on the base material in the portion positioned between the first mounting region for mounting the first electronic component thereon and the second mounting region for mounting the second electronic component thereon. Therefore, the heat generated from the second electronic component in the operation can be prevented from being transferred to the first electronic component through the substrate in the corresponding portion to the first mounting region.
According to a sixth aspect of the invention, a method of manufacturing a wiring board, including:
a substrate formed by a semiconductor material, a first pad which is provided on a first surface side of the substrate and on which a first electronic component is to be mounted, and a second pad which is provided on the first surface side of the substrate and on which a second electronic component having a larger amount of heat generation in an operation than that of the first electronic component is to be mounted;
a first through electrode which penetrates the substrate and has one of ends connected electrically to the first pad; and
a second through electrode which penetrates the substrate and has one of ends connected electrically to the second pad,
the method comprises:
wherein the third and fourth through holes are formed to interpose the heat intercepting member between the first through hole and the third through hole and between the second through hole and the fourth through hole at the through hole forming step.
According to the invention, the first and second through holes penetrating the base material and the through trench positioned between the first mounting region for mounting the first electronic component thereon and the second mounting region for mounting the second electronic component thereon and penetrating the base material are formed on the base material at the same time. Subsequently, the first through hole, the second through hole and the through trench are filled with the insulating resin to form the heat intercepting member. Then, the third through hole in which the first through electrode is to be provided is formed on the heat intercepting member disposed in the first through hole, and the fourth through hole in which the second through electrode is to be provided is formed on the heat intercepting member disposed in the second through hole. Thereafter, the third and fourth through holes are filled with the conductive member to form the first and second through electrodes. Next, the first and second pads are formed. Consequently, the heat intercepting member penetrating the base material and serving to intercept the heat generated from the second electronic component in the operation is formed on the base material in the portion positioned between the first mounting region for mounting the first electronic component thereon and the second mounting region for mounting the second electronic component thereon. Therefore, the heat generated from the second electronic component in the operation can be prevented from being transferred to the first electronic component through the substrate in the corresponding portion to the first mounting region.
After the first through hole, the second through hole and the through trench are filled with the insulating resin, moreover, the third and fourth through holes are formed to interpose the heat intercepting member between the first through hole and the third through hole and between the second through hole and the fourth through hole at the through hole forming step. Consequently, it is not necessary to separately form an insulating film for insulating the first and second through electrodes from the substrate. Therefore, it is possible to reduce a manufacturing cost of the wiring board.
According to a seventh aspect of the invention, a method of manufacturing a wiring board, including:
a substrate formed by a semiconductor material, a first pad which is provided on a first surface side of the substrate and on which a first electronic component is to be mounted, and a second pad which is provided on the first surface side of the substrate and on which a second electronic component having a larger amount of heat generation in an operation than that of the first electronic component is to be mounted;
a first through electrode which penetrates the substrate and has one of ends connected electrically to the first pad; and
a second through electrode which penetrates the substrate and has one of ends connected electrically to the second pad,
comprises:
According to the invention, the trench which does not penetrate the base material is formed on the base material in the portion positioned between the first mounting region for mounting the first electronic component thereon and the second mounting region for mounting the second electronic component thereon from the second surface side of the base material which is positioned on the opposite side to the first surface of the base material. Subsequently, the first through hole corresponding to the forming position for the first through electrode and penetrating the base material and the second through hole corresponding to the forming position for the second through electrode and penetrating the base material are formed on the base material at the same time. Then, the heat intercepting member for intercepting a heat is formed in the trench. Thereafter, the first and second through holes are filled with the conductive member to form the first and second through electrodes. Next, the first stand and second pads are formed. Consequently, the heat intercepting member for intercepting the heat generated from the second electronic component in the operation is formed on the base material in the portion positioned between the first mounting region for mounting the first electronic component thereon and the second mounting region for mounting the second electronic component thereon. Therefore, the heat generated from the second electronic component in the operation can be prevented from being transferred to the first electronic component through the substrate in the corresponding portion to the first mounting region.
According to the invention, it is possible to prevent the heat generated from the second electronic component in the operation from being transferred to the first electronic component through the substrate in the corresponding portion to the first mounting region on which the first electronic component is to be mounted.
Other features and advantages may be apparent from the following detailed description, the accompanying drawings and the claims.
Exemplary embodiments according to the invention will be described below with reference to the drawings. The exemplary embodiments will show semiconductor devices using wiring boards of the invention, as examples. The semiconductor device of the invention is also called as “semiconductor package”.
(First Embodiment)
With reference to
The wiring board 11 has a substrate 21, insulating films 22 and 23, through electrodes 25 and 26, a pad 28 (a first pad), a pad 29 (a second pad), a wiring 31, a heat intercepting member 32, vias 33 and 34, external connecting pads 36 and 37, and solder resist layers 39 and 41.
The substrate 21 is plate-shaped and is constituted by a semiconductor material (for example, silicon or a compound semiconductor such as GaAs). The substrate 21 has through holes 45 and 46 and a through trench 47. The through hole 45 is formed in a first mounting region on which the electronic component 12 is to be mounted. The through hole 46 is formed in a second mounting region on which the electronic component 13 is to be mounted. The through trench 47 is formed to penetrate the substrate 21 in a portion positioned between the first mounting region and the second mounting region. The through trench 47 serves to dispose the heat intercepting member 32 therein. A width A of the through trench 47 can be set to be 200 μm, for example.
For the substrate 21, for example, it is possible to use a silicon substrate or a compound semiconductor substrate such as GaAs. In the case in which the silicon substrate is used as the substrate 21, a thickness of the substrate 21 can be set to be 200 μm, for example.
In the embodiment, the following description will be given by taking, as an example, the case in which the silicon substrate is used as the substrate 21.
The insulating film 22 is provided to cover an upper surface 21A (a first surface) of the substrate 21 and a surface of the substrate 21 in corresponding portions to side surfaces of the through holes 45 and 46. For the insulating film 22, it is possible to use a thermal oxide film or an oxide film (for example, an oxide film formed by a CVD process), for instance. More specifically, an SiO2 film can be used as the insulating film 22, for example. In the case in which the SiO2 film is used as the insulating film 22, a thickness of the insulating film 22 can be set to be 1 μm, for example.
The insulating film 23 is provided to cover a lower surface 21B (a second surface) of the substrate 21. The insulating film 23 has an opening portion 48 for exposing the other end of the through electrode 25 and an opening portion 49 for exposing the other end of the through electrode 26. For the insulating film 23, for instance, it is possible to use an oxide film (for example, an oxide film formed by the CVD process) or an insulating resin. For the oxide film, it is possible to use the SiO2 film, for example. A thickness of the insulating film 23 can be set to be 1 μm, for example.
The through electrode 25 is formed in the through hole 45 on which the insulating film 22 is formed. The through electrode 26 is provided in the through hole 46 on which the insulating film 22 is formed. End faces 25A and 26A of the through electrodes 25 and 26 are set on almost the level with an upper surface 22A of the insulating film 22. End faces 25B and 26B of the through electrodes 25 and 26 are set on almost the level with the lower surface 21B of the substrate 21. The through electrodes 25 and 26 can be formed by a plating method, for example. For materials of the through electrodes 25 and 26, it is possible to use Cu, for example.
The pad 28 is provided on the insulating film 22 formed on the upper surface 21A of the substrate 21. The pad 28 is connected to an upper end of the through electrode 25. The pad 28 has a connecting surface 28A on which the electronic component 12 is to be mounted.
The pad 29 is provided on the insulating film 22 formed on the upper surface 21A of the substrate 21. The pad 29 is connected to an upper end of the through electrode 26. The pad 29 has a connecting surface 29A on which the electronic component 13 is to be mounted.
The wiring 31 is provided on the insulating film 22 in a portion positioned between the first mounting region on which the electronic component 12 is to be mounted and the second mounting region on which the electronic component 13 is to be mounted. The wiring 31 has one of ends which is connected to the pad 28 and has the other end connected to the pad 29.
For materials of the pads 28 and 29 and the wiring 31 which have the structure, for example, it is possible to use Cu. Moreover, the pads 28 and 29 and the wiring 31 can be formed by a semiadditive process, for example.
The heat intercepting member 32 is provided in the through trench 47. In other words, the heat intercepting member 32 is disposed to penetrate the substrate 21 in the portion positioned between the first mounting region on which the electronic component 12 is to be mounted and the second mounting region on which the electronic component 13 is to be mounted. An end face 32A of the heat intercepting member 32 is set on almost the level with the upper surface 22A of the insulating film 22. An end face 32B of the heat intercepting member 32 is set on almost the level with the lower surface 21B of the substrate 21. In the case in which the width A of the through trench 47 is 200 μm, a width B of the heat intercepting member 32 can be set to be 198 μm, for example.
The heat intercepting member 32 is constituted by a material (for example, a material having a thermal conductivity of 0.1 to 1.0 W/m·K) which can intercept a heat transferred through the substrate 21 (for example, a thermal conductivity of 150 to 170 W/m·K). For the material of the heat intercepting member 32, it is possible to use a resin or a resin containing a filler (for example, silica), for instance. For the resin constituting the heat intercepting member 32, it is possible to use a polyimide resin, an epoxy resin or a silicone resin, for example. In the case in which the resin containing the filler (for example, the silica) is used as the heat intercepting member 32, it is possible to reduce a difference in a coefficient of thermal expansion between the substrate 21 and the heat intercepting member 32. For example, in the case in which a silicon substrate (a coefficient of thermal expansion of 3 ppm/K) is used as the substrate 21, a content of the filler (silica) contained in the resin can be set to be 50% (at this time, the coefficient of thermal expansion of the heat intercepting member 32 is approximately 40 ppm/K).
By providing the heat intercepting member 32 penetrating the substrate 21 in the portion positioned between the first mounting region on which the electronic component 12 is to be mounted and the second mounting region on which the electronic component 13 is to be mounted, thus, it is possible to intercept a heat generated from the electronic component 13 in an operation by means of the heat intercepting member 32. Consequently, the heat generated from the electronic component 13 in the operation can be prevented from being transferred to the electronic component 12 through the substrate 21 in a corresponding portion to the first mounting region.
The via 33 is provided in the opening portion 48. The via 33 is connected to the other end of the through electrode 25. Consequently, the via 33 is electrically connected to the pad 28 through the through electrode 25.
The via 34 is provided in the opening portion 49. The via 34 is connected to the other end of the through electrode 26. Consequently, the via 34 is electrically connected to the pad 29 through the through electrode 26.
For materials of the vias 33 and 34 having the structure, it is possible to use Cu, for example.
The external connecting pad 36 is provided on a lower surface 23A of the insulating film 23. The external connecting pad 36 is constituted integrally with the via 33. The external connecting pad 36 is electrically connected to the pad 28 through the via 33 and the through electrode 25. The external connecting pad 36 has a connecting surface 36A on which the external connecting terminal 15 is to be provided.
The external connecting pad 37 is provided on the lower surface 23A of the insulating film 23. The external connecting pad 37 is constituted integrally with the via 34. The external connecting pad 37 is electrically connected to the pad 29 through the via 34 and the through electrode 26. The external connecting pad 37 has a connecting surface 37A on which the external connecting terminal 16 is to be provided.
The solder resist layer 39 is provided on the upper surface 22A of the insulating film 22 and the wiring 31. The solder resist layer 39 has an opening portion 39A for exposing the connecting surface 28A of the pad 28 and an opening portion 39B for exposing the connecting surface 29A of the pad 29.
The solder resist layer 41 is provided on the lower surface 23A of the insulating film 23. The solder resist layer 41 has an opening portion 41A for exposing the connecting surface 36A of the external connecting pad 36 and an opening portion 41B for exposing the connecting surface 37A of the external connecting pad 37.
The electronic component 12 is mounted on the pad 28 formed in the first mounting region by a flip chip bonding. A clearance between the electronic component 12 and the wiring board 11 is filled with an underfill resin 17. For the electronic component 12, it is possible to use a semiconductor chip (for example, a flash memory) having an amount of heat generation of 1 W or less in an operation, for instance.
The electronic component 13 is mounted on the pad 29 formed in the second mounting region by a flip chip bonding. A clearance between the electronic component 13 and the wiring board 11 is filled with an underfill resin 18. The electronic component 13 has a larger amount of heat generation in the operation than that of the electronic component 12. The electronic component 13 has an amount of heat generation of 20 W or more in the operation, for example. For the electronic component 13, it is possible to use a semiconductor chip for a CPU, for example.
The external connecting terminal 15 is provided on the connecting surface 36A of the external connecting pad 36. The external connecting terminal 15 is electrically connected to the electronic component 12. The external connecting terminal 15 is connected to a pad (not shown) provided on a mounting substrate such as a mother board. For the external connecting terminal 15, it is possible to use a solder ball, for example.
The external connecting terminal 16 is provided on the connecting surface 37A of the external connecting pad 37. The external connecting terminal 16 is electrically connected to the electronic component 13. The external connecting terminal 16 is connected to a pad (not shown) provided on a mounting substrate such as a mother board. For the external connecting terminal 16, it is possible to use a solder ball, for example.
According to the wiring board of the exemplary embodiment of the invention, by providing the heat intercepting member 32 penetrating the substrate 21 in the portion positioned between the first mounting region on which the electronic component 12 is to be mounted and the second mounting region on which the electronic component 13 is to be mounted, thus, it is possible to intercept a heat generated from the electronic component 13 in an operation by means of the heat intercepting member 32. Consequently, the heat generated from the electronic component 13 in the operation can be prevented from being transferred to the electronic component 12 through the substrate 21 in a corresponding portion to the first mounting region.
According to the semiconductor device in accordance with the first embodiment, the wiring board 11 having the structure is provided so that the electronic component 12 can be prevented from carrying out a malfunction by the heat generated from the electronic component 13 in the operation. Therefore, it is possible to exhibit an original performance of the electronic component 12.
With reference to
The base material 55 has a cut region D surrounding the substrate forming regions C. The cut region D is to be cut when a structure corresponding to the semiconductor device 10 is formed in the substrate forming regions C and the semiconductor device 10 is then divided into individual pieces.
For a material of the base material 55, the same material as that of the substrate 21 is used. For the material of the base material 55, for example, it is possible to use a semiconductor material (for instance, silicon or a compound semiconductor such as GaAs). In the stage, a thickness of the base material 55 is greater than that of the substrate 21. In the case in which the thickness of the substrate 21 formed of the silicon is 200 μm, the thickness of the base material 55 can be set to be 725 μm, for example. In the embodiment, the following description will be given by taking, as an example, the case in which a silicon wafer is used as the base material 55.
At a step shown in
At this time, the opening portions 57 and 58 and the trench 59 are formed so as not to penetrate the base material 55. The opening portions 57 and 58 and the trench 59 can be formed by anisotropic etching using a mask (for example, dry etching), for instance. Depths of the opening portions 57 and 58 and the trench 59 are almost equal to each other and can be set to be 220 μm, for example. The trench 59 is formed on the base material 55 in a portion positioned between a first mounting region on which an electronic component 12 is to be mounted and a second mounting region on which an electronic component 13 is to be mounted. A width E of the trench 59 can be set to be 200 μm, for example.
The opening portion 57 is changed into the through hole 45 shown in
Thus, the trench 59 serving as the through trench 47 in which a thermal intercepting member 32 is to be provided is formed simultaneously with the formation of the opening portions 57 and 58 serving as the through holes 45 and 46. As compared with the case in which the trench 59 and the opening portions 57 and 58 are formed separately, consequently, it is possible to reduce a manufacturing cost of a wiring board 11 more greatly.
At a step shown in
For the insulating film 22, it is possible to use a thermal oxide film or an oxide film formed by a CVD process, for example. More specifically, for the insulating film 22, it is possible to use an SiO2 film, for example. In the case in which the SiO2 film is used as the insulating film 22, a thickness of the insulating film 22 can be set to be 1 μm, for example.
At a step shown in
At a step shown in
At this time, the opening portion 61A of the mask 61 is also filled with the resin. At a step shown in
For the resin, it is possible to use a resin capable of intercepting a heat (for example, a thermal conductivity of 0.1 to 1.0 W/m·K), for instance. More specifically, for the resin, it is possible to use a polyimide resin, an epoxy resin or a silicone resin, for example. The resin may be caused to contain a filler (for example, silica). In the case in which the resin is caused to contain the filler (for example, the silica), it is possible to reduce a difference in a coefficient of thermal expansion between the substrate 21 and the heat intercepting member 32. For example, in the case in which a silicon substrate (a coefficient of thermal expansion of 3 ppm/K) is used as the substrate 21, a content of the filler (the silica) contained in the resin can be set to be 50%.
At a step shown in
At a step shown in
At a step shown in
Consequently, an end face 25A of the conductive member 65 formed in the first mounting region, an end face 26A of the conductive member 65 formed in the second mounting region and an end face 32A of the heat intercepting member 32 are set on almost the level with the upper surface 22A of the insulating film 22. Therefore, it is possible to form pads 28 and 29 and a wiring 31 on an upper surface side of a structure shown in
At the conductive member and/or heat intercepting member removing step, in some cases in which the heat intercepting member 32 is removed, the insulating film 22 formed on the upper surface 55A of the base material 55 is gone. In the embodiment, however, the following description will be given by taking, as an example, the case in which the insulating film 22 is left. In the case in which the insulating film 22 is gone at the conductive member and/or heat intercepting member removing step, moreover, it is necessary to form the insulating film separately. In this ease, the same processing as a step shown in
At a step shown in
At a step shown in
At a step shown in
More specifically, the base material 55 is thinned by grinding or polishing. At this time, the insulating film 22 formed on the lower surface 55B side of the base material 55 is removed so that end faces 25B and 26B of the through electrodes 25 and 26 and an end face 32B of the heat intercepting member 32 are set on almost the level with the lower surface 55B of the thinned base material 55. A thickness of the thinned base material 55 can be set to be 200 μm, for example.
Thus, the heat intercepting member 32 penetrating the base material 55 and serving to intercept a heat generated from the electronic component 13 in an operation is formed on the base material 55 in the portion positioned between the first mounting region and the second mounting region. Consequently, the heat generated from the electronic component 13 in the operation can be prevented from being transferred to the electronic component 12 through the substrate 21 in a corresponding portion to the first mounting region.
At a step shown in
At a step shown in
More specifically, for example, a seed layer is formed by a sputtering method and the vias 33 and 34 and the external connecting pads 36 and 37 are then formed by a semiadditive process. For materials of the vias 33 and 34 and the external connecting pads 36 and 37, it is possible to use Cu, for example.
At a step shown in
At a step shown in
At a step shown in
According to the method of manufacturing the wiring board of the exemplary embodiment of the invention, the opening portions 57, 58 which do not penetrate the base material 55 and the trench 59 which is positioned between the first mounting region for mounting the electronic component 12 thereon and the second mounting region for mounting the electronic component 13 thereon and does not penetrate the base material 55 are formed on the base material 55 from the upper surface 55A side of the base material 55 at the same time. Subsequently, the heat intercepting member 32 for intercepting a heat is formed in the trench 59. Then, the conductive members 65 serving as the base metals of the through electrodes 25, 26 are formed in the opening portions 57, 58. Thereafter, the pads 28, 29 are formed. Next, the base material 55 is thinned until the conductive member 65 and the heat intercepting member 32 are exposed from the lower surface 55B side of the base material 55 to form the through electrodes 25 and 26. Consequently, the heat intercepting member 32 penetrating the base material 55 and serving to intercept the heat generated from the electronic component 13 in the operation is formed on the base material 55 in the portion positioned between the first mounting region and the second mounting region. Therefore, the heat generated from the electronic component 13 in the operation can be prevented from being transferred to the electronic component 12 through the substrate in the corresponding portion to the first mounting region.
With reference to
The wiring board 71 has the same structure as that of the wiring board 11 except that a through trench 73 and a heat intercepting member 74 are provided in place of the through trench 47 and the heat intercepting member 32 which are provided on the wiring board 11.
The through trench 73 is formed on a substrate 21 to continuously surround the substrate 21 in a corresponding portion to the second mounting region G. The through trench 73 is set to take a shape of a frame. A width A of the through trench 73 can be set to be 200 μm, for example.
The heat intercepting member 74 is provided in the through trench 73. The heat intercepting member 74 has the same structure as that of the heat intercepting member 32 described above except that a shape thereof is set to be a shape of a frame.
According to the wiring board in accordance with the variant of the embodiment, the through trench 73 for continuously surrounding the substrate 21 in the corresponding portion to the second mounting region G is formed on the substrate 21 and the heat intercepting member 74 taking the shape of the frame is provided in the through trench 73. Consequently, a heat generated from the electronic component 13 in an operation can be prevented from being transferred to a region other than the second mounting region G. Therefore, the heat generated from the electronic component 13 in the operation can be prevented from being transferred to the electronic component 12 through the substrate 21 in a corresponding portion to the first mounting region F.
The wiring board 71 according to the variant of the first embodiment can be manufactured by the same technique as that for the wiring board 11 according to the first embodiment described above.
As shown in
(Second Embodiment)
With reference to
The wiring board 81 has the same structure as that of the wiring board 11 except that the insulating film 22 in the portion formed on the side surface of the through trench 47 provided on the wiring board 11 is excluded from the components. In other words, there is employed a structure in which the side surface of the through trench 47 is provided in contact with a sidewall of a heat intercepting member 32 having an insulating property.
In the wiring board 81 according to the second embodiment which has the structure described above, it is possible to obtain the same advantages as those of the wiring board 11 according to the first embodiment.
With reference to
The trench 59 is formed by anisotropic etching using a mask (for example, dry etching), for instance. The trench 59 is changed into the through trench 47 shown in
At a step shown in
At a step shown in
At this time, the opening portions 57 and 58 are formed so as not to penetrate the base material 55. The opening portions 57 and 58 can be formed by anisotropic etching using a mask (for example, dry etching), for instance. Depths of the opening portions 57 and 58 can be set to be 220 μm, for example.
The opening portion 57 is changed into a through hole 45 shown in
At a step shown in
At a step shown in
At a step shown in
At a step shown in
Thus, the heat intercepting member 32 penetrating the base material 55 and serving to intercept a heat generated from the electronic component 13 in an operation is formed on the base material 55 in the portion positioned between the first mounting region and the second mounting region. Consequently, the heat generated from the electronic component 13 in the operation can be prevented from being transferred to the electronic component 12 through a substrate 21 in a corresponding portion to the first mounting region.
At a step shown in
At a step shown in
At a step shown in
According to the method of manufacturing the wiring board of the exemplary embodiment of the invention, the trench 59 which does not penetrate the base material 55 is formed from the upper surface 55A side of the base material 55 on the base material 55 in the portion positioned between the first mounting region on which the electronic component 12 is to be mounted and the second mounting region on which the electronic component 13 is to be mounted. Subsequently, the heat intercepting member 32 for intercepting a heat is formed in the trench 59. Then, the opening portions 57, 58 which correspond to the forming positions for the through electrodes 25, 26 and do not penetrate the base material 55 are formed on the base material 55 from the upper surface 55A side of the base material 55 at the same time. Thereafter, the conductive members 65 serving as the base metals of the through electrodes 25, 26 are formed in the opening portions 57, 58. Next, the pads 28, 29 are formed. Subsequently, the base material 55 is thinned until the conductive member 65 and the heat intercepting member 32 are exposed from the lower surface 55B side of the base material 55. Consequently, the heat intercepting member 32 penetrating the base material 55 and serving to intercept the heat generated from the electronic component 13 in the operation is formed on the base material 55 in the portion positioned between the first mounting region and the second mounting region. Therefore, the heat generated from the electronic component 13 in the operation can be prevented from being transferred to the electronic component 12 through the substrate 21 in the corresponding portion to the first mounting region.
In place of the heat intercepting member 32 provided in the wiring board 81 according to the embodiment, it is also possible to provide the heat intercepting member 74 described with reference to
(Third Embodiment)
With reference to
The wiring board 91 has the same structure as that of the wiring board 11 except that insulating films 93 and 94 are provided in place of the insulating films 22 and 23 disposed on the wiring board 11, and furthermore, vias 96 and 97 are provided and the vias 33 and 34 provided on the wiring board 11 are excluded from the components.
The insulating film 93 is provided on an upper surface 21A of a substrate 21 and has an opening portion 93A for exposing an end face 25A of a through electrode 25 and an opening portion 93B for exposing an end face 26A of a through electrode 26. Pads 28 and 29 and a wiring 31 are formed on an upper surface of the insulating film 93. For the insulating film 93, it is possible to use an oxide film formed by a CVD process (for example, an SiO2 film) or a resin layer (for example, a resin layer constituted by an epoxy resin or a polyimide resin), for instance. A thickness of the insulating film 93 can be set to be 1 μm, for example. The opening portions 93A and 93B can be formed by anisotropic etching using a mask (for example, dry etching) or a laser processing, for example.
The insulating film 94 is provided on a lower surface 21B of the substrate 21. A lower surface 94A of the insulating film 94 is on almost the level with end faces 25B and 26B of the through electrodes 25 and 26. For the insulating film 93, it is possible to use a thermal oxide film or an oxide film formed by the CVD process (for example, an SiO2 film), for instance. A thickness of the insulating film 94 can be set to be 1 μm, for example.
The via 96 is provided in the opening portion 93A. The via 96 is constituted integrally with the pad 28 formed thereon. A lower end of the via 96 is connected to the through electrode 25. Consequently, the pad 28 is electrically connected to the through electrode 25 through the via 96.
The via 97 is provided in the opening portion 93B. The via 97 is constituted integrally with the pad 29 formed thereon. A lower end of the via 97 is connected to the through electrode 26. Consequently, the pad 29 is electrically connected to the through electrode 26 through the via 97. For materials of the vias 96 and 97, it is possible to use Cu, for example.
An external connecting pad 36 is connected to a lower end of the through electrode 25. An external connecting pad 37 is connected to a lower end of the through electrode 26.
In the wiring board 91 according to the third embodiment having the structure described above, it is possible to obtain the same advantages as those of the wiring board 11 according to the first embodiment.
In place of a heat intercepting member 32 provided in the semiconductor device 90 according to the third embodiment, it is also possible to provide the heat intercepting member 74 described with reference to
With reference to
The base material 55 has a cut region D for surrounding the substrate forming regions C. The base material 55 shown in
At a step shown in
At this time, the through holes 45 and 46 and the through trench 47 are formed to penetrate the base material 55. The through holes 45 and 46 and the through trench 47 can be formed by anisotropic etching using a mask (for example, dry etching), for instance. Depths of the through holes 45 and 46 and the through trench 47 are almost equal to a thickness of the base material 55 and can be set to be 220 μm, for example. The through trench 47 is formed on the base material 55 in a portion positioned between a first mounting region for mounting an electronic component 12 thereon and a second mounting region for mounting an electronic component 13 thereon. A width A of the through trench 47 can be set to be 200 μm, for example.
At a step shown in
At a step shown in
At a step shown in
At this time, an opening portion 61A of the mask 61 is also filled with a resin. For the resin, it is possible to use a resin capable of intercepting a heat (for example, a thermal conductivity of 0.1 to 1.0 W/m·K), for instance. More specifically, for the resin, it is possible to use a polyimide resin, an epoxy resin or a silicone resin, for example. The resin may be caused to contain a filler (for example, silica). In the case in which the resin is caused to contain the filler (for example, the silica), it is possible to reduce a difference in a coefficient of thermal expansion between the substrate 21 and the heat intercepting member 32. For example, in the case in which a silicon substrate (a coefficient of thermal expansion of 3 ppm/K) is used as the substrate 21, a content of the filler (the silica) contained in the resin can be set to be 50%.
At a step shown in
At a step shown in
At a step shown in
Consequently, there are formed the heat intercepting member 32 penetrating the base material 55 and the through electrodes 25 and 26 (the steps shown in
Thus, the heat intercepting member 32 penetrating the base material 55 and serving to intercept a heat generated from the electronic component 13 in an operation is formed on the base material 55 in the portion positioned between the first mounting region and the second mounting region. Consequently, the heat generated from the electronic component 13 in the operation can be prevented from being transferred to the electronic component 12 through the substrate 21 in a corresponding portion to the first mounting region.
At a step shown in
At a step shown in
At a step shown in
At a step shown in
At a step shown in
At a step shown in
At a step shown in
According to the method of manufacturing the wiring board of the exemplary embodiment of the invention, the through holes 45, 46 which correspond to the forming positions for the through electrodes 25, 26 and penetrate the base material 55 and the through trench 47 positioned between the first mounting region for mounting the electronic component 12 thereon and the second mounting region for mounting the electronic component 13 thereon and penetrating the base material 55 are formed on the base, material at the same time. Subsequently, the heat intercepting member 32 for intercepting a heat is formed in the through trench 47. Then, the through holes 45, 46 are filled with the conductive member to form the through electrodes 25, 26. Thereafter, the pads 28, 29 are formed. Consequently, the heat intercepting member 32 penetrating the base material 55 and serving to intercept the heat generated from the electronic component 13 in the operation is formed on the base material 55 in the portion positioned between the first mounting region for mounting the electronic component 12 thereon and the second mounting region for mounting the electronic component 13 thereon. Therefore, the heat generated from the electronic component 13 in the operation can be prevented from being transferred to the electronic component 12 through the substrate 21 in the corresponding portion to the first mounting region.
(Fourth Embodiment)
With reference to
The wiring board 111 has the same structure as that of the wiring board 91 except that insulating films 115 and 116 are provided in place of the insulating films 93 and 94 disposed in the wiring board 91, the vias 96 and 97 provided on the wiring board 91 are excluded from the components, through holes 118 and 119 are provided, and furthermore, a heat intercepting member 32 is provided between side surfaces of through holes 45 and 46 and through electrodes 25 and 26.
The insulating film 115 is provided on an upper surface 21A of a substrate 21. The insulating film 115 covers side surfaces of upper ends of the through electrodes 25 and 26. An upper surface 115A of the insulating film 115 is set on almost the level with end faces 25A and 26A of the through electrodes 25 and 26. Pads 28 and 29, a wiring 31 and a solder resist layer 39 are provided on the upper surface 115A of the insulating film 115. For the insulating film 115, it is possible to use an oxide film formed by a CVD process (for example, an SiO2 film) or a resin layer (for example, a resin layer constituted by an epoxy resin or a polyimide resin), for instance. A thickness of the insulating film 115 can be set to be 5 μm to 10 μm, for example.
The insulating film 116 is provided on a lower surface 21B of the substrate 21. The insulating film 116 covers side surfaces of lower ends of the through electrodes 25 and 26. A lower surface 116A of the insulating film 116 is set on almost the level with end faces 25B and 26B of the through electrodes 25 and 26. External connecting pads 36 and 37 and a solder resist layer 41 are provided on the lower surface 116A of the insulating film 116. For the insulating film 116, it is possible to use an oxide film formed by a CVD process (for example, an SiO2 film) or a resin layer (for example, a resin layer constituted by an epoxy resin or a polyimide resin), for instance. A thickness of the insulating film 116 can be set to be 5 μm to 10 μm, for example.
The heat intercepting member 32 in portions provided between side surfaces of the through holes 45 and 46 and the through electrodes 25 and 26 serves to electrically insulate the substrate 21 from the through electrodes 25 and 26. The heat intercepting member 32 in the portions provided between the side surfaces of the through holes 45 and 46 and the through electrodes 25 and 26 is constituted by the same material having an insulating property as that of the heat intercepting member 32 provided in a through trench 47. A thickness of the heat intercepting member 32 in the portions provided between the side surfaces of the through holes 45 and 46 and the through electrodes 25 and 26 can be set to be 20 μm, for example.
The through hole 118 is formed to penetrate the insulating layers 115 and 116 and the heat intercepting member 32 in a portion provided in a position in which the through electrode 25 is to be formed. The through hole 118 serves to provide the through electrode 25 therein. In the case in which a diameter of the through hole 45 is 100 μm, that of the through hole 118 can be set to be 60 μm, for example.
The through hole 119 is formed to penetrate the insulating layers 115 and 116 and the heat intercepting member 32 in a portion provided in a position in which the through electrode 26 is to be formed. The through hole 119 serves to provide the through electrode 26 therein. In the case in which a diameter of the through hole 46 is 100 μm, that of the through hole 119 can be set to be 60 μm, for example.
A side surface of the heat intercepting member 32 in a portion provided in the through trench 47 is disposed in contact with the substrate 21. The heat intercepting member 32 in the portion disposed in the through trench 47 has an end face 32A provided in contact with a lower surface 115B of the insulating film 115 and the other end face 32B provided in contact with an upper surface 116B of the insulating film 116.
In the wiring board 111 according to the fourth embodiment which has the structure, it is possible to obtain the same advantages as those of the wiring board 11 according to the first embodiment.
In place of the heat intercepting member 32 provided in the wiring board 110 according to the embodiment, it is also possible to provide the heat intercepting member 74 described with reference to
With reference to
At a step shown in
At this time, the heat intercepting member 32 is formed in such a manner that an end face 32A of the heat intercepting member 32 is on almost the level with an upper surface 55A of the base material 55 and an end face 32B of the heat intercepting member 32 is on almost the level with a lower surface 55B of the base material 55. At the heat intercepting member filling step, in the case in which the insulating resin is protruded from the upper surface 55A and/or the lower surface 55B in the base material 55, the insulating resin in the protruded portion may be removed by polishing, for example.
For the insulating resin, it is possible to use an epoxy resin, a polyimide resin or a silicone resin, for example. The insulating resin may be caused to contain a filler (for example, silica).
At a step shown in
At a step shown in
At this time, the through holes 118 and 119 are formed in such a manner that the heat intercepting member 32 having an insulating property is provided between a side surface of the through hole 45 and the through hole 118 and between a side surface of the through hole 46 and the through hole 119.
Thus, the through holes 118 and 119 are formed in such a manner that the heat intercepting member 32 having an insulating property is provided between the side surface of the through hole 45 and the through hole 118 and between the side surface of the through hole 46 and the through hole 119. Consequently, it is not necessary to separately form an insulating film for insulating through electrodes 25 and 26 from a substrate 21. Therefore, it is possible to reduce a manufacturing cost of a wiring board 111.
In the case in which diameters of the through holes 45 and 46 are 100 μm, those of the through holes 118 and 119 can be set to be 60 μm, for example.
At a step shown in
More specifically, the through electrodes 25 and 26 can be formed in contact with a lower surface 116A of the insulating film 116 by an electrolytic plating method of providing a metal foil and setting the metal foil as a feeding layer, for example. In this case, it is possible to use Cu for the conductive member, for example. Moreover, it is also possible to form the through electrodes 25 and 26 by filling the through holes 118 and 119 with a conductive member (in this case, a conductive paste) through a printing method. For the conductive paste, it is possible to use an Ni paste, an Ag paste and a Cu paste, for example.
At the through electrode forming step, the through electrodes 25 and 26 are formed in such a manner that end faces 25A and 26A of the through electrodes 25 and 26 are on almost the level with an upper surface 115A of the insulating film 115 and end faces 25B and 26B of the through electrodes 25 and 26 are on almost the level with the lower surface 116A of the insulating film 116. In the case in which the conductive member is protruded from the upper surface 115A of the insulating film 115 and/or the lower surface 116A of the insulating film 116, the through holes 118 and 119 are filled with the conductive member and the conductive member in the protruded portion is then removed by polishing, for example. Thus, the through electrodes 25 and 26 are formed.
At a step shown in
At a step shown in
At a step shown in
At a step shown in
According to the method of manufacturing the wiring board of the exemplary embodiment of the invention, the through holes 45, 46 penetrating the base material 55 and the through trench 47 positioned between the first mounting region for mounting the electronic component 12 thereon and the second mounting region for mounting the electronic component 13 thereon and penetrating the base material 55 are formed on the base material 55 at the same time. Subsequently, the through holes 45, 46 and the through trench 47 are filled with the insulating resin to form the heat intercepting member 32. Then, the through hole 118 in which the through electrode 25 is to be provided is formed on the heat intercepting member 32 disposed in the through hole 45, and the through hole 119 in which the through electrode 26 is to be provided is formed on the heat intercepting member 32 disposed in the through hole 46. Thereafter, the through holes 118, 119 are filled with the conductive member to form the through electrodes 25, 26. Next, the pads 28, 29 are formed. Consequently, the heat intercepting member 32 penetrating the base material 55 and serving to intercept the heat generated from the electronic component 13 in the operation is formed on the base material 55 in the portion positioned between the first mounting region for mounting the electronic component 12 thereon and the second mounting region for mounting the electronic component 13 thereon. Therefore, the heat generated from the electronic component 13 in the operation can be prevented from being transferred to the electronic component 12 through the substrate in the corresponding portion to the first mounting region.
In the through hole forming step in which the through holes 45, 46 and the through trench 47 are filled with the insulating resin to form the heat intercepting member 32, moreover, the through holes 118, 119 are formed to interpose the heat intercepting member 32 between the through hole 45 and the through hole 118 and between the through hole 46 and the through hole 119. Consequently, it is not necessary to separately form an insulating film for insulating the through electrodes 25, 26 from the substrate 21. Therefore, it is possible to reduce a manufacturing cost of the wiring board 111.
(Fifth Embodiment)
With reference to
The wiring board 131 has the same structure as that of the wiring board 11 except that a trench 133 and a heat intercepting member 135 are provided in place of the through trench 47 and the heat intercepting member 32 which are disposed in the wiring board 11.
The trench 133 is formed on a substrate 21 in a portion positioned between a first mounting region for mounting an electronic component 12 thereon and a second mounting region for mounting an electronic component 13 thereon from a lower surface 21B side of the substrate 21. The trench 133 does not penetrate the substrate 21. A surface of the substrate 21 in a portion constituting the trench 133 is covered with an insulating film 22. A width I of the trench 133 can be set to be 200 μm, for example. In the case in which a thickness of the substrate 21 is 200 μm, a depth J of the trench 133 can be set to be 170 μm, for example.
The heat intercepting member 135 is provided in the trench 133 on which the insulating film 22 is formed. The heat intercepting member 135 has the same structure as that of the heat intercepting member 32 except that a shape thereof is different from that of the heat intercepting member 32 described in the first embodiment. In other words, the heat intercepting member 135 is constituted by the same material as that of the heat intercepting member 32 and can produce the same advantages as those of the heat intercepting member 32. A width K of the heat intercepting member 135 can be set to be 150 μm, for example.
According to the semiconductor device of the exemplary embodiment of the invention, by providing the trench 133 which does not penetrate the substrate 21 and providing the heat intercepting member 135 in the trench 133 in the portion positioned between the mounting region on which the electronic component 12 is to be mounted and the mounting region on which the electronic component 13 having a larger amount of heat generation in an operation than that of the electronic component 12 is to be mounted, thus, it is possible to intercept a heat generated from the electronic component 13 in an operation by means of the heat intercepting member 32. Consequently, the heat generated from the electronic component 13 in the operation can be prevented from being transferred to the electronic component 12 through the substrate 21 in a corresponding portion to the first mounting region.
The heat intercepting member 135 provided in the wiring board 131 according to the fifth embodiment may be disposed to surround the second mounting region continuously or discontinuously.
With reference to
At a step shown in
More specifically, for instance, the base material 55 is subjected to etching to form the trench 133 by anisotropic etching using a mask (for example, dry etching), for instance. A width I of the trench 133 can be set to be 200 μm, for example. A depth J of the trench 133 can be set to be 170 μm, for example.
At a step shown in
More specifically, for instance, the base material 55 is subjected to etching to form the through holes 45 and 46 by anisotropic etching using a mask (for example, dry etching), for instance.
At a step shown in
At a step shown in.
At a step shown in
At this time, the opening portion 61A of the mask 61 is also filled with a resin. For the resin, it is possible to use a resin capable of intercepting a heat (for example, a thermal conductivity of 0.1 to 1.0 W/m·K), for instance. More specifically, for the resin, it is possible to use a polyimide resin, an epoxy resin or a silicone resin, for example. The resin may be caused to contain a filler (for example, silica). In the case in which the resin is caused to contain the filler (for example, the silica), it is possible to reduce a difference in a coefficient of thermal expansion between a substrate 21 and the heat intercepting member 135. For example, in the case in which a silicon substrate (a coefficient of thermal expansion of 3 ppm/K) is used as the substrate 21, a content of the filler (the silica) contained in the resin can be set to be 50%.
At a step shown in
At a step shown in
At a step shown in
More specifically, the unnecessary conductive member 65 and/or heat intercepting member 135 in the protruded portions from the insulating film 22 are/is removed by grinding or polishing. Consequently, the through electrodes 25 and 26 are formed (in the embodiment, the steps shown in
At a step shown in
At a step shown in
At a step shown in
According to the method of manufacturing the wiring board of the exemplary embodiment of the invention, the trench 133 which does not penetrate the base material 55 is formed on the base material 55 in the portion positioned between the first mounting region for mounting the electronic component 12 thereon and the second mounting region for mounting the electronic component 13 thereon from the lower surface 55B side of the base material 55. Subsequently, the through holes 45, 46 corresponding to the forming positions for the through electrodes 25, 26 and penetrating the base material 55 are formed on the base material at the same time. Then, the heat intercepting member 135 for intercepting a heat is formed in the trench 133. Thereafter, the through holes 45, 46 are filled with the conductive member to form the through electrodes 25, 26. Next, the pads 28, 29 are formed. Consequently, the, heat intercepting member 135 for intercepting the heat generated from the electronic component 13 in the operation is formed on the base material 55 in the portion positioned between the first mounting region for mounting the electronic component 12 thereon and the second mounting region for mounting the electronic component 13 thereon. Therefore, the heat generated from the electronic component 13 in the operation can be prevented from being transferred to the electronic component 12 through the substrate 21 in the corresponding portion to the first mounting region.
While the invention has been described with respect to a limited number of embodiments, those skilled in the art, having benefit of this disclosure, will appreciate that other embodiments can be devised which do not depart from the scope of the invention as disclosed herein. Accordingly, the scope of the invention should be limited only by the attached claims.
Murayama, Kei, Sakaguchi, Hideaki
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| Executed on | Assignor | Assignee | Conveyance | Frame | Reel | Doc |
| Oct 13 2009 | SAKAGUCHI, HIDEAKI | SHINKO ELECTRIC INDUSTRIES CO , LTD | ASSIGNMENT OF ASSIGNORS INTEREST SEE DOCUMENT FOR DETAILS | 023396 | /0656 | |
| Oct 13 2009 | MURAYAMA, KEI | SHINKO ELECTRIC INDUSTRIES CO , LTD | ASSIGNMENT OF ASSIGNORS INTEREST SEE DOCUMENT FOR DETAILS | 023396 | /0656 | |
| Oct 20 2009 | Shinko Electric Industries Co., Ltd. | (assignment on the face of the patent) | / |
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