An active matrix electroluminescence display device and a method for fabricating the same, whereby damage caused by UV light rays during the fabrication process can be prevented, are disclosed. The active matrix electroluminescence display device includes a plurality of transistors formed on a substrate having an emissive area and a non-emissive area defined thereon, an insulating layer formed on the substrate and the thin film transistors, a metallic protective layer formed on the insulating layer of the non-emissive area, a first electrode formed on the insulating layer of the emissive area, an electroluminous layer formed on the first electrode, and a second electrode formed on the electroluminous layer.
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14. An el device comprising:
a substrate having a first area and a second area, wherein the first area is included in an emissive area and the second area is included in a non-emissive area;
a plurality of first transistors provided over the first area of the substrate, at least one of the plurality of first transistors having a first source, a first drain, a channel provided between the first source and drain, and a first gate provided over the channel;
a plurality of light emitting elements, each of the plurality of light emitting elements coupled to a corresponding transistor of the plurality of first transistors, at least one of the plurality of light emitting elements having a first electrode, a second electrode and an electroluminescent layer provided between the first and second electrodes, and the first electrode is coupled to the first drain of a corresponding transistor of the plurality of first transistors;
a plurality of second transistors provided over the second area of the substrate, at least one of the plurality of second transistors having a second source, a second drain, a channel provided between the second source and drain, and a second gate provided over the channel;
at least one insulting layer provide on at least one of the plurality of first transistors or the plurality of second transistors; and
a conductive layer provided over at least one of the plurality of second transistors and on the at least one insulating layer, the conductive layer having a multilayer structure,
wherein the second source, the second drain, the channel provided between the second source and drain, and the second gate at the plurality of second transistors are covered with the conductive layer,
wherein the conductive layer includes a first layer and overlaps at least one of the plurality of second transistors in the non-emissive area, and
wherein the first layer is coupled to a pad.
1. An electroluminescent (el) device comprising:
a substrate having a first area and a second area;
a plurality of first transistors provided over the first area of the substrate, at least one of the plurality of first transistors having a first source, a first drain, a channel provided between the first source and drain, and a first gate provided over the channel;
a plurality of light emitting elements, each of the plurality of light emitting elements coupled to a corresponding transistor of the plurality of first transistors, at least one of the plurality of light emitting elements having a first electrode, a second electrode and an electroluminescent layer provided between the first and second electrodes, and the first electrode is coupled to the first drain of a corresponding transistor of the plurality of first transistors;
a plurality of second transistors provided over the second area of the substrate, at least one of the plurality of second transistors having a second source, a second drain, a channel provided between the second source and drain, and a second gate provided over the channel;
at least one insulating layer provide on at least one of the plurality of first transistors or the plurality of second transistors; and
a conductive layer provided over at least one of the plurality of second transistors and on the at least one insulating layer, the conductive layer having a multilayer structure,
wherein the second source, the second drain, the channel provided between the second source and drain, and the second gate at the plurality of second transistors are covered with the conductive layer, and wherein:
the first area is included in an emissive area,
the second area is included in a non-emissive area,
the conductive layer includes a first layer that overlaps at least one of the plurality of second transistors in the non-emissive area, and
the first layer is formed from one or more materials that block ultraviolet rays.
13. An el device comprising:
a substrate having a first area and a second area, wherein the first area is included in an emissive area and the second area is included in a non-emissive area;
a plurality of first transistors provided over the first area of the substrate, at least one of the plurality of first transistors having a first source, a first drain, a channel provided between the first source and drain, and a first gate provided over the channel;
a plurality of light emitting elements, each of the plurality of light emitting elements coupled to a corresponding transistor of the plurality of first transistors, at least one of the plurality of light emitting elements having a first electrode, a second electrode and an electroluminescent layer provided between the first and second electrodes, and the first electrode is coupled to the first drain of a corresponding transistor of the plurality of first transistors;
a plurality of second transistors provided over the second area of the substrate, at least one of the plurality of second transistors having a second source, a second drain, a channel provided between the second source and drain, and a second gate provided over the channel;
at least one insulting layer provided on at least one of the plurality of first transistors or the plurality of second transistors; and
a conductive layer provided over at least one of the plurality of second transistors and on the at least one insulating layer, the conductive layer having a multilayer structure,
wherein the second source, the second drain, the channel provided between the second source and drain, and the second gate at the plurality of second transistors are covered with the conductive layer,
wherein the conductive layer includes a first layer that overlaps at least one of the plurality of second transistors in the non-emissive area, and
wherein the first layer is electrically coupled to a circuit to reduce capacitance between the conductive layer and the at least one second transistor.
3. The el device of
4. The el device of
5. The el device of
6. The el device of
7. The el device of
8. The el device of
9. The el device of
a planarization layer between the conductive layer and said at least one of the second plurality of transistors, wherein the conductive layer is formed directly on a upper surface of the planarization layer so that the conductive layer has a substantially unifoiin planar thickness in the non-emissive area.
10. The el device of
11. The el device of
12. The el device of
the conductive layer is formed over a first one of the second plurality of transistors and a second one of the second plurality of transistors, and
the conductive layer is not formed in an area between the first and second plurality of second transistors in the non-emissive area.
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This application is a Continuation Application of U.S. application Ser. No. 11/854,700 filed Sep. 13, 2007 now U.S. Pat. No. 7,876,040, which is a Continuation Application of U.S. application Ser. No. 11/656,471, filed Jan. 23, 2007 now U.S. Pat. No. 7,755,280, which is a Continuation Application of Ser. No. 10/836,348, filed May 3, 2004, now U.S. Pat. No. 7,187,122. The disclosures of the previous applications are herein incorporated by reference.
1. Field of the Invention
The present invention relates to an electroluminescence device, and more particularly, to an active matrix electroluminescence device and a method for fabricating the same. Although the present invention is suitable for a wide scope of applications, it is particularly suitable for preventing damage caused by UV light rays during the fabrication process.
2. Discussion of the Related Art
An electroluminescence device is being viewed as a next generation flat display device for its characteristics of a wide viewing angle, a high aperture ratio, and a high chromaticity. More specifically, in an organic electroluminescence (EL) device, when an electric charge is injected into an organic electroluminous (EL) layer formed between a hole injection electrode and an electron injection electrode, the electron and the hole are paired to each other generating an exciton, the excited state of which falls to a ground state, thereby emitting light. Thus, the organic electroluminescence device (ELD) can be operated at a lower voltage, as compared to other display devices.
Depending upon the driving method, the organic ELD can be classified into a passivation ELD and an active matrix ELD. The passivation ELD is formed of a transparent electrode on a transparent substrate, an organic EL layer on the transparent electrode, and a cathode electrode on the organic EL layer. The active matrix ELD is formed of a plurality of scan lines and data lines defining a pixel area on a substrate, a switching device electrically connecting the scan lines and the data lines and controlling the electroluminescence device, a transparent electrode (i.e., anode) electrically connected to the switching device and formed in the pixel area on the substrate, an organic EL layer on the transparent electrode, and a metal electrode (i.e., cathode) on the organic EL layer. Unlike the passivation ELD, the active matrix ELD further includes the switching device, which is a thin film transistor (TFT).
However, in the related art fabricating method, UV light rays are used to carry out a surface treatment process both prior to and after forming the organic EL layer. During the process, the UV light rays cause damages on devices, such as the thin film transistor. More specifically, such damages mainly occur in devices that are not in the emissive area, such as a gate driver or a data driver.
Accordingly, the present invention is directed to an active matrix electroluminescence device and a method for fabricating the same that substantially obviate one or more problems due to limitations and disadvantages of the related art.
An object of the present invention is to provide an active matrix electroluminescence device and a method for fabricating the same, which can enhance the reliability of the device.
Additional advantages, objects, and features of the invention will be set forth in part in the description which follows and in part will become apparent to those having ordinary skill in the art upon examination of the following or may be learned from practice of the invention. The objectives and other advantages of the invention may be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
To achieve these objects and other advantages and in accordance with the purpose of the invention, as embodied and broadly described herein, an active matrix electroluminescence display device includes a plurality of transistors formed on a substrate having an emissive area and a non-emissive area defined thereon, an insulating layer formed on the substrate and the thin film transistors, a metallic protective layer formed on the insulating layer of the non-emissive area, a first electrode formed on the insulating layer of the emissive area, an electroluminous layer formed on the first electrode, and a second electrode formed on the electroluminous layer.
Herein, the metallic protective layer is formed either on an entire surface or a predetermined area of the insulating layer of the non-emissive area. When the metallic protective layer and the first electrode are formed of the same material, the metallic protective layer and the first electrode are formed of an opaque metal. Conversely, when the metallic protective layer and the first electrode are formed of a different material, the metallic protective layer is formed of an opaque metal, and the first electrode is formed of a transparent metal.
In order to prevent a capacitance with the thin film transistors from occurring, the metallic protective layer is electrically connected to one of a gate pad and a data pad.
In another aspect of the present invention, a method for fabricating an active matrix electroluminescence display device includes forming a plurality of transistors on a substrate having an emissive area and a non-emissive area defined thereon, forming an insulating layer on the substrate and the thin film transistors, forming a metallic protective layer on the insulating layer of the non-emissive area, and forming a first electrode on the insulating layer of the emissive area, forming an electroluminous layer on the first electrode, and forming a second electrode on the electroluminous layer.
Herein, a metallic material layer is formed on an entire surface of the insulating layer, the metallic material layer then being selectively removed, so as to simultaneously form the first electrode and the metallic protective layer. Or, by using different materials, the first electrode and the metallic protective layer are formed non-simultaneously.
It is to be understood that both the foregoing general description and the following detailed description of the present invention are exemplary and explanatory and are intended to provide further explanation of the invention as claimed.
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this application, illustrate embodiments of the invention and together with the description serve to explain the principle of the invention. In the drawings;
Reference will now be made in detail to the preferred embodiments of the present invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers will be used throughout the drawings to refer to the same or like parts.
Referring to
In addition, the active matrix electroluminescence device according to the first embodiment of the present invention also includes a metallic protective layer 10 formed on the circuit part 8 outside of the emissive area 3, so as to prevent damages caused by the UV light rays from occurring in the circuit part 8. The metallic protective layer 10 is formed on the area excluding the pad part 2 and the emissive area 3 of the substrate 1.
The method for fabricating the active matrix electroluminescence device according to the first embodiment of the present invention will now be described in detail.
Referring to
Thereafter, an interlayer dielectric 7 is formed on the gate insulating layer 5 and the gate electrode 6. Then, the interlayer dielectric 7 and the gate insulating layer 5 are selectively etched, so as to expose a predetermined portion of the surface of the source and drain electrodes 4a and 4b, thereby forming a plurality of contact holes. The contact holes are then filled with a metal, thereby forming a plurality of electrode lines 9 each electrically connected to the source and drain electrodes 4a and 4b.
Subsequently, an insulating material (e.g., a SiNx group or SiOx group material) is deposited on the interlayer dielectric 7 and the electrode lines 9, thereby forming a protective layer 12. And, as shown in
Also, in order to reduce the capacitance occurring between the metallic protective layer 10 and the thin film transistor 100, the metallic protective layer 10 is electrically connected to the pad part 2 through a lining.
Moreover, referring to
Thereafter, as shown in
Although not shown in the drawings, a protective layer (not shown) is formed to protect the organic EL layer 15 from oxygen or moisture. Finally, a protective cap is formed by using a sealant and a transparent substrate.
Referring to
In addition, the active matrix electroluminescence device according to the second embodiment of the present invention also includes a metallic protective layer 20 formed on the circuit part 8 outside of the emissive area 3, so as to prevent damages caused by the UV light rays from occurring in the circuit part 8. Referring to
With the exception of the metallic protective layer 20, the structure of the second embodiment is the same as that of the first embodiment.
Referring to
In addition, the active matrix electroluminescence device according to the third embodiment of the present invention also includes a metallic protective layer 30 formed on the circuit part 8 outside of the emissive area 3, so as to prevent damages caused by the UV light rays from occurring in the circuit part 8. Herein, the metallic protective layer 30 is formed only on a region outside of the pad part 2 and the emissive area 3.
The method for fabricating the active matrix electroluminescence device according to the third embodiment of the present invention will now be described.
Referring to
Thereafter, an interlayer dielectric 7 is formed on the gate insulating layer 5 and the gate electrode 6. Then, the interlayer dielectric 7 and the gate insulating layer 5 are selectively etched, so as to expose a predetermined portion of the surface of the source and drain electrodes 4a and 4b, thereby forming a plurality of contact holes. The contact holes are then filled with a metal, thereby forming a plurality of electrode lines 9 each electrically connected to the source and drain electrodes 4a and 4b.
Then, an insulating material (e.g., a SiNx group or SiOx group material) is deposited on the interlayer dielectric 7 and the electrode lines 9, thereby forming a protective layer 12. Then, a planarization overcoat 17 is formed on the protective layer 12.
Subsequently, a metallic material layer is deposited on the planarization overcoat 17, and the metallic material layer is selectively removed, so as to simultaneously form the pixel electrode 11 and the metallic protective layer 30 of the same material. The pixel electrode 11 is formed only on the pixel area within the emissive area 3 and is connected to the electrode line 7 within the emissive area 3. The metallic protective layer 30 is formed in the area excluding the emissive area 3 and the pad part 2, as shown in
Also, in order to reduce the capacitance occurring between the metallic protective layer 30 and the thin film transistor 100, the metallic protective layer 30 is electrically connected to the pad part 2 through a lining.
Furthermore, as shown in
Referring to
In addition, the active matrix electroluminescence device according to the fourth embodiment of the present invention also includes a metallic protective layer 40 formed on the circuit part 8 outside of the emissive area 3, so as to prevent damages caused by the UV light rays from occurring in the circuit part 8. Referring to
With the exception of the metallic protective layer 40, the structure of the fourth embodiment is the same as that of the third embodiment.
In the aforementioned active matrix electroluminescence display device and the method for fabricating the same, the metallic protective layer is formed on devices outside of the emissive area, such as the thin film transistor, so as to prevent damage caused by the UV light rays from occurring during the fabrication process, thereby providing a highly reliable device.
It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the inventions. Thus, it is intended that the present invention covers the modifications and variations of this invention provided they come within the scope of the appended claims and their equivalents.
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