A means of forming unevenness for preventing specular reflection of a pixel electrode, without increasing the number of process steps, is provided. In a method of manufacturing a reflecting type liquid crystal display device, the formation of unevenness (having a radius of curvature r in a convex portion) in the surface of a pixel electrode is performed by the same photomask as that used for forming a channel etch type TFT, in which the convex portion is formed in order to provide unevenness to the surface of the pixel electrode and give light scattering characteristics.

Patent
   8415668
Priority
May 09 2000
Filed
Mar 01 2011
Issued
Apr 09 2013
Expiry
Dec 19 2020
Extension
224 days
Assg.orig
Entity
unknown
0
336
EXPIRED
1. A liquid crystal display device comprising:
a first substrate;
a thin film transistor over the first substrate, the thin film transistor comprising:
a gate electrode over the first substrate;
a semiconductor film having a channel forming region over the gate electrode;
a source electrode and a drain electrode over the semiconductor film;
a pixel electrode electrically connected to the thin film transistor;
a first wiring over the first substrate;
a second wiring over the first wiring;
a convex portion overlapped with the first wiring;
a second substrate opposite to the first substrate; and
a light shielding portion located between the thin film transistor and the second substrate,
wherein the first wiring comprises a same material as a material of the gate electrode,
wherein each of the second wiring and the convex portion comprises a same material as a material of the source electrode and the drain electrode,
wherein the second wiring has a lamination structure comprising at least two conductive layers,
wherein the convex portion is island-shaped, and
wherein the channel forming region overlaps with the light shielding portion, and does not overlap with the pixel electrode.
33. A liquid crystal display device comprising:
a first substrate,
a thin film transistor over the first substrate, the thin film transistor comprising:
a gate electrode over the first substrate;
a semiconductor film having a channel forming region over the gate electrode;
a source electrode and a drain electrode over the semiconductor film;
a pixel electrode electrically connected to the thin film transistor;
a first wiring over the first substrate;
a second wiring over the first wiring;
a convex portion overlapped with the first wiring;
a second substrate opposite to the first substrate; and
a light shielding portion located between the thin film transistor and the second substrate,
wherein the first wiring and the gate electrode are concurrently formed by a first same patterning process step,
wherein the second wiring, the convex portion, the source electrode, and the drain electrode are concurrently formed by a second same patterning process step,
wherein the second wiring has a lamination structure comprising at least two conductive layers,
wherein the convex portion is island-shaped, and
wherein the channel forming region overlaps with the light shielding portion, and does not overlap with the pixel electrode.
9. A liquid crystal display device comprising:
a first substrate;
a thin film transistor over the first substrate, the thin film transistor comprising:
a gate electrode over the first substrate;
a semiconductor film having a channel forming region over the gate electrode;
a source electrode and a drain electrode over the semiconductor film;
a pixel electrode electrically connected to the thin film transistor;
a first wiring over the first substrate;
a second wiring over the first wiring;
a convex portion overlapped with the first wiring;
a second substrate opposite to the first substrate; and
a light shielding portion located between the thin film transistor and the second substrate,
wherein the first wiring comprises a same material as a material of the gate electrode,
wherein each of the second wiring and the convex portion comprises a same material as a material of the source electrode and the drain electrode,
wherein the second wiring has a lamination structure comprising at least two conductive layers,
wherein the convex portion is island-shaped,
wherein the channel forming region overlaps with the light shielding portion, and does not overlap with the pixel electrode,
wherein an size of the convex portion is 1 to 400 μm2, and
wherein adjacent convex portions are isolated by 0.1 μm or greater.
41. A liquid crystal display device comprising:
a first substrate,
a thin film transistor over the first substrate, the thin film transistor comprising:
a gate electrode over the first substrate;
a semiconductor film having a channel forming region over the gate electrode;
a source electrode and a drain electrode over the semiconductor film;
a pixel electrode electrically connected to the thin film transistor;
a first wiring over the first substrate;
a second wiring over the first wiring;
a convex portion overlapped with the first wiring;
a second substrate opposite to the first substrate; and
a light shielding portion located between the thin film transistor and the second substrate,
wherein the first wiring and the gate electrode are concurrently formed by a first same patterning process step,
wherein the second wiring, the convex portion, the source electrode, and the drain electrode are concurrently formed by a second same patterning process step,
wherein the second wiring has a lamination structure comprising at least two conductive layers,
wherein the convex portion is island-shaped,
wherein the channel forming region overlaps with the light shielding portion, and does not overlap with the pixel electrode,
wherein an size of the convex portion is 1 to 400 μm2, and
wherein adjacent convex portions are isolated by 0.1 μm or greater.
49. A liquid crystal display device comprising:
a first substrate;
a thin film transistor over the first substrate, the thin film transistor comprising:
a gate electrode over the first substrate;
a semiconductor film having a channel forming region over the gate electrode;
a source electrode and a drain electrode over the semiconductor film;
a pixel electrode electrically connected to the thin film transistor;
a first wiring over the first substrate;
a second wiring over the first wiring;
a convex portion overlapped with the first wiring;
a terminal portion comprising a first layer and a second layer over the first substrate, the terminal portion electrically being connected to a flexible printed circuit;
a second substrate opposite to the first substrate; and
a light shielding portion located between the thin film transistor and the second substrate,
wherein the first wiring, the first layer and the gate electrode are concurrently formed by a first patterning process step,
wherein the second wiring, the convex portion, the source electrode, and the drain electrode are concurrently formed by a second pattering process step,
wherein the second layer and the pixel electrode are concurrently formed by a third patterning process step,
wherein the second wiring has a lamination structure comprising at least two conductive layers,
wherein the second layer covers at least one end of the first layer,
wherein the convex portion is island-shaped, and
wherein the channel forming region overlaps with the light shielding portion, and does not overlap with the pixel electrode.
17. A liquid crystal display device comprising:
a first substrate;
a thin film transistor over the first substrate, the thin film transistor comprising:
a gate electrode over the first substrate;
a semiconductor film having a channel forming region over the gate electrode;
a source electrode and a drain electrode over the semiconductor film;
a pixel electrode electrically connected to the thin film transistor;
a first wiring over the first substrate;
a second wiring over the first wiring;
a convex portion overlapped with the first wiring;
a terminal portion comprising a first layer and a second layer over the first substrate, the terminal portion electrically being connected to a flexible printed circuit,
a second substrate opposite to the first substrate; and
a light shielding portion located between the thin film transistor and the second substrate,
wherein the first wiring comprises a same material as a material of the gate electrode,
wherein each of the second wiring and the convex portion comprises a same material as a material of the source electrode and the drain electrode,
wherein the second wiring has a lamination structure comprising at least two conductive layers,
wherein the first layer comprises a same material as a material of the gate electrode, and the second layer comprises a same material as a material of the pixel electrode,
wherein the second layer covers at least one end of the first layer,
wherein the convex portion is island-shaped, and
wherein the channel forming region overlaps with the light shielding portion, and does not overlap with the pixel electrode.
57. A liquid crystal display device comprising:
a first substrate;
a thin film transistor over the first substrate, the thin film transistor comprising:
a gate electrode over the first substrate;
a semiconductor film having a channel forming region over the gate electrode;
a source electrode and a drain electrode over the semiconductor film;
a pixel electrode electrically connected to the thin film transistor;
a first wiring over the first substrate;
a second wiring over the first wiring;
a convex portion overlapped with the first wiring;
a terminal portion comprising a first layer and a second layer over the first substrate, the terminal portion electrically being connected to a flexible printed circuit;
a second substrate opposite to the first substrate; and
a light shielding portion located between the thin film transistor and the second substrate,
wherein the first wiring, the first layer and the gate electrode are concurrently formed by a first patterning process step,
wherein the second wiring, the convex portion, the source electrode, and the drain electrode are concurrently formed by a second pattering process step,
wherein the second layer and the pixel electrode are concurrently formed by a third patterning process step,
wherein the second wiring has a lamination structure comprising at least two conductive layers,
wherein the second layer covers at least one end of the first layer,
wherein the convex portion is island-shaped,
wherein the channel forming region overlaps with the light shielding portion, and does not overlap with the pixel electrode,
wherein a size of the convex portion is 1 to 400 μm2, and
wherein adjacent convex portions are isolated by 0.1 μm or greater.
25. A liquid crystal display device comprising:
a first substrate;
a thin film transistor over the first substrate, the thin film transistor comprising:
a gate electrode over the first substrate;
a semiconductor film having a channel forming region over the gate electrode;
a source electrode and a drain electrode over the semiconductor film;
a pixel electrode electrically connected to the thin film transistor;
a first wiring over the first substrate;
a second wiring over the first wiring;
a convex portion overlapped with the first wiring;
a terminal portion comprising a first layer and a second layer over the first substrate, the terminal portion electrically being connected to a flexible printed circuit,
a second substrate opposite to the first substrate; and
a light shielding portion located between the thin film transistor and the second substrate,
wherein the first wiring comprises a same material as a material of the gate electrode,
wherein each of the second wiring and the convex portion comprises a same material as a material of the source electrode and the drain electrode,
wherein the second wiring has a lamination structure comprising at least two conductive layers,
wherein the first layer comprises a same material as a material of the gate electrode, and the second layer comprises a same material as a material of the pixel electrode,
wherein the second layer covers at least one end of the first layer,
wherein the convex portion is island-shaped,
wherein the channel forming region overlaps with the light shielding portion, and does not overlap with the pixel electrode,
wherein an size of the convex portion is 1 to 400 μm2, and
wherein adjacent convex portions are isolated by 0.1 μm or greater.
2. The liquid crystal display device according to claim 1, wherein the light shielding portion is a laminate of color filters.
3. The liquid crystal display device according to claim 1, wherein the first wiring is a capacitor wiring.
4. The liquid crystal display device according to claim 1, wherein the liquid crystal display device is a reflecting type liquid crystal display device.
5. The liquid crystal display device according to claim 1, wherein the pixel electrode comprises a conductive film having reflectivity.
6. The liquid crystal display device according to claim 1, wherein the convex portion is electrically connected to the pixel electrode.
7. The liquid crystal display device according to claim 1, wherein the pixel electrode is contact with an upper surface of the convex portion.
8. The liquid crystal display device according to claim 1, wherein the convex portion is completely overlapped with the first wiring.
10. The liquid crystal display device according to claim 9, wherein the light shielding portion is a laminate of color filters.
11. The liquid crystal display device according to claim 9, wherein the first wiring is a capacitor wiring.
12. The liquid crystal display device according to claim 9, wherein the liquid crystal display device is a reflecting type liquid crystal display device.
13. The liquid crystal display device according to claim 9, wherein the pixel electrode comprises a conductive film having reflectivity.
14. The liquid crystal display device according to claim 9, wherein the convex portion is electrically connected to the pixel electrode.
15. The liquid crystal display device according to claim 9, wherein the pixel electrode is contact with an upper surface of the convex portion.
16. The liquid crystal display device according to claim 9, wherein the convex portion is completely overlapped with the first wiring.
18. The liquid crystal display device according to claim 17, wherein the light shielding portion is a laminate of color filters.
19. The liquid crystal display device according to claim 17, wherein the first wiring is a capacitor wiring.
20. The liquid crystal display device according to claim 17, wherein the liquid crystal display device is a reflecting type liquid crystal display device.
21. The liquid crystal display device according to claim 17, wherein the pixel electrode comprises a conductive film having reflectivity.
22. The liquid crystal display device according to claim 17, wherein the convex portion is electrically connected to the pixel electrode.
23. The liquid crystal display device according to claim 17, wherein the pixel electrode is contact with an upper surface of the convex portion.
24. The liquid crystal display device according to claim 17, wherein the convex portion is completely overlapped with the first wiring.
26. The liquid crystal display device according to claim 25, wherein the light shielding portion is a laminate of color filters.
27. The liquid crystal display device according to claim 25, wherein the first wiring is a capacitor wiring.
28. The liquid crystal display device according to claim 25, wherein the liquid crystal display device is a reflecting type liquid crystal display device.
29. The liquid crystal display device according to claim 25, wherein the pixel electrode comprises a conductive film having reflectivity.
30. The liquid crystal display device according to claim 25, wherein the convex portion is electrically connected to the pixel electrode.
31. The liquid crystal display device according to claim 25, wherein the pixel electrode is contact with an upper surface of the convex portion.
32. The liquid crystal display device according to claim 25, wherein the convex portion is completely overlapped with the first wiring.
34. The liquid crystal display device according to claim 33, wherein the light shielding portion is a laminate of color filters.
35. The liquid crystal display device according to claim 33, wherein the first wiring is a capacitor wiring.
36. The liquid crystal display device according to claim 33, wherein the liquid crystal display device is a reflecting type liquid crystal display device.
37. The liquid crystal display device according to claim 33, wherein the pixel electrode comprises a conductive film having reflectivity.
38. The liquid crystal display device according to claim 33, wherein the convex portion is electrically connected to the pixel electrode.
39. The liquid crystal display device according to claim 33, wherein the pixel electrode is contact with an upper surface of the convex portion.
40. The liquid crystal display device according to claim 33, wherein the convex portion is completely overlapped with the first wiring.
42. The liquid crystal display device according to claim 41, wherein the light shielding portion is a laminate of color filters.
43. The liquid crystal display device according to claim 41, wherein the first wiring is a capacitor wiring.
44. The liquid crystal display device according to claim 41, wherein the liquid crystal display device is a reflecting type liquid crystal display device.
45. The liquid crystal display device according to claim 41, wherein the pixel electrode comprises a conductive film having reflectivity.
46. The liquid crystal display device according to claim 41, wherein the convex portion is electrically connected to the pixel electrode.
47. The liquid crystal display device according to claim 41, wherein the pixel electrode is contact with an upper surface of the convex portion.
48. The liquid crystal display device according to claim 42, wherein the convex portion is completely overlapped with the first wiring.
50. The liquid crystal display device according to claim 49, wherein the light shielding portion is a laminate of color filters.
51. The liquid crystal display device according to claim 49, wherein the first wiring is a capacitor wiring.
52. The liquid crystal display device according to claim 49, wherein the liquid crystal display device is a reflecting type liquid crystal display device.
53. The liquid crystal display device according to claim 49, wherein the pixel electrode comprises a conductive film having reflectivity.
54. The liquid crystal display device according to claim 49, wherein the convex portion is electrically connected to the pixel electrode.
55. The liquid crystal display device according to claim 49, wherein the pixel electrode is contact with an upper surface of the convex portion.
56. The liquid crystal display device according to claim 49, wherein the convex portion is completely overlapped with the first wiring.
58. The liquid crystal display device according to claim 57, wherein the light shielding portion is a laminate of color filters.
59. The liquid crystal display device according to claim 57, wherein the first wiring is a capacitor wiring.
60. The liquid crystal display device according to claim 57, wherein the liquid crystal display device is a reflecting type liquid crystal display device.
61. The liquid crystal display device according to claim 57, wherein the pixel electrode comprises a conductive film having reflectivity.
62. The liquid crystal display device according to claim 57, wherein the convex portion is electrically connected to the pixel electrode.
63. The liquid crystal display device according to claim 57, wherein the pixel electrode is contact with an upper surface of the convex portion.
64. The liquid crystal display device according to claim 57, wherein the convex portion is completely overlapped with the first wiring.

1. Field of the Invention

The present invention relates to a semiconductor device having a circuit composed of a thin film transistor (hereafter referred to as TFT), and to a method of manufacturing thereof. For example, the present invention relates to an electro-optical device, typically a liquid crystal display panel, and to electronic equipment loaded with this type of electro-optical device as a part.

Note that, throughout this specification, semiconductor device denotes a general device which can function by utilizing semiconductor characteristics and that the category of semiconductor devices includes electro-optical devices, semiconductor circuits, and electronic equipment.

2. Description of Related Art

In recent years, techniques of structuring a thin film transistor (TFT) by using a semiconductor thin film (with a thickness on the order of several nm to several hundred of nm) formed on a substrate having an insulating surface have been in the spotlight. The thin film transistor is being widely applied in an electronic device such as an IC or an electro-optical device, and in particular, its development as a switching element of an image display device has been proceeding rapidly.

Conventionally, a liquid crystal display device is known as an image display device. Active matrix type liquid crystal display devices have come into widespread use due to the fact that, compared to passive type liquid crystal display devices, a higher definition image can be obtained. By driving pixel electrodes arranged in a matrix state in the active matrix type liquid crystal display device, a display pattern is formed on a screen. In more detail, by applying a voltage between a selected pixel electrode and an opposing electrode corresponding to the pixel electrode, optical modulation of a liquid crystal layer arranged between the pixel electrode and the opposing electrode is performed, and the optical modulation is recognized as a display pattern by an observer.

If roughly divided, two types of active matrix liquid crystal display devices are known, a transmitting type and a reflecting type.

In particular, a reflecting type liquid crystal display device has the advantage of lower power consumption compared to a transmitting type liquid crystal display device because a back light is not used, and the demand for its use as a direct view display in mobile computers and video cameras is increasing.

Note that the reflecting type liquid crystal display device utilizes an optical modulation effect of a liquid crystal, and display of light and dark is performed by selecting between a state of incident light reflected by a pixel electrode and output externally to the device, and a state of the incident light not output externally to the device, and in addition, image display is performed by combining the two states. Further, a color filter is attached to an opposing substrate in order to display colors. In general, the pixel electrode in a reflecting type liquid crystal display device is made from a metallic material having a high light reflectivity, and is electrically connected to a switching element such as a thin film transistor (hereafter referred to as a TFT).

The use of this type of active matrix type electro-optical device is spreading, and along with making the screen size larger, demands for higher definition, higher aperture ratio, and higher reliability are increasing. Further, at the same time, demands are increasing for improving productivity and lowering costs.

Conventionally, an amorphous silicon film is preferably used as an amorphous semiconductor film because of the capability of forming it on a large surface area substrate at a low temperature equal to or less than 300° C. Further, a reverse stagger type (or bottom gate type) TFT having a channel forming region formed of an amorphous semiconductor film is often used.

Furthermore, the color filters have R (red), G (green), and B (blue) coloration layers, and a light shielding mask covering only the pixel gap, and red, green, and blue colored light is extracted by transmitting light through the layers. Further, the light shielding mask is generally composed of a metallic film (such as chrome) or an organic film containing a black color pigment. By forming the color filters in positions corresponding to the pixels, the color of light output from each pixel can be changed. Note that the term positions corresponding to the pixels denotes positions coinciding with the pixel electrodes.

Conventionally, the production costs have been high in order to manufacture a TFT on a substrate with a technique of photolithography using at least 5 photomasks for an active matrix type electro-optical device. In order to improve productivity and yield, reducing the number of steps is considered to be an effective means.

Specifically, it is necessary to reduce the number of photomasks needed to produce the TFT. The photomask is used in a photolithography technique in order to form a photoresist pattern, which becomes an etching process mask, on the substrate.

By using one photomask, there are applied with steps such as applying resist, pre-baking, exposure, development, and post-baking, and steps of film deposition and etching before and after, and in addition, resist peeling, cleaning, and drying steps are added. Therefore, the entire process becomes complex, which leads to a problem.

Further, after forming the pixel electrode in the reflecting type liquid crystal display device, the surface is conventionally given unevenness by adding a step such as sand blasting or etching, preventing specular reflection and increasing the white color level by scattering reflected light.

Furthermore, in a conventional liquid crystal display panel using a metallic film as a color filter light shielding mask, a parasitic capacitance forms with other wirings, and a signal lag problem easily develops. In addition, when the organic film containing the black pigment is used as the color filter light shielding mask, a problem of an increase in the number of process steps develops.

The present invention is for answering these types of problems, and an object of the present invention is the realization of a reduction in production cost, and an increase in yield, by reducing the number of TFT manufacturing steps in an electro-optical device, typically an active matrix type liquid crystal display device.

Further, an object of the present invention is to provide a method of manufacture in which unevenness is formed for preventing specular reflection of the pixel electrode without increasing the number of process steps.

In order to solve the above problems, the present invention is characterized in that the formation of a convex portion, in order to give unevenness to the surface of the pixel electrode and to scatter light, is performed with the same photomask as that for forming the TFT in the method of manufacturing the reflecting type liquid crystal display device. Note that the convex portion is suitably formed in a region, external to wirings (gate wiring, source wiring) and TFTs, which becomes a display region. Unevenness is then formed in the surface of the pixel electrode along the unevenness formed in the surface of an insulating film covering the convex portion. It is thus possible to form unevenness in the surface of the pixel electrode without increasing the number of process steps.

A structure of the present invention disclosed in this specification is:

a semiconductor device having:

a TFT containing a gate electrode on an insulating surface, an insulating film on said gate electrode, a semiconductor layer on said insulating film, an n-type semiconductor layer on said semiconductor layer, and a conducting layer on said n-type semiconductor layer;

a plurality of convex portions on said insulating surface; and

a pixel electrode contacting said plurality of convex portions, having a uneven surface, and electrically connected to said TFT.

In the above structure, the semiconductor device is characterized in that the radius of curvature r of said convex portions in said pixel electrode having unevenness in its surface is from 0.1 to 4 μm, preferably from 0.2 to 2 μm.

In the above respective structures, the semiconductor device is characterized in that said plurality of convex portions is a lamination formed by:

Further, in the above respective structures, the semiconductor device is characterized in that, within said lamination structuring said convex portion, a mask for the patterning of said material layer formed of the same material as said gate electrode of said TFT differs from a mask for the patterning of said material layer formed of the same material as said semiconductor layer of said TFT.

Furthermore, in the above respective structures, the semiconductor device is characterized in that, within said lamination structuring said convex portion:

Further, in the above respective structures, the semiconductor device is characterized in that said plurality of convex portions has a plurality of convex portions with different heights.

Further, in the above respective structures, the semiconductor device is characterized in that said plurality of convex portions has a plurality of convex portions with differing lamination structures.

Further, in the above respective structures, the semiconductor device is characterized in that said semiconductor device is a reflecting type liquid crystal display device in which said pixel electrode is a film containing Al or Ag as its main constituent, or a lamination film of said films.

Further, in the above respective structures, the semiconductor device is characterized in that said semiconductor layer is an amorphous semiconductor film.

Further, in the above respective structures, the semiconductor device is characterized in that said gate electrode is made from a film containing as its main constituent an element selected from the group consisting of: Al, Cu, Ti, Mo, W, Ta, Nd, and Cr; or an alloy film of these elements; or a lamination film of these elements.

Further, the present invention is characterized in that, not only is a light shielding mask (black matrix) used, but also in that it has a pixel structure for light shielding of the TFT and between pixels. One means of light shielding is characterized by forming, on an opposing substrate, a lamination film of two coloration layers (a lamination film of a red color coloration layer and a blue color coloration layer, or a lamination film of a red color coloration layer and a green color coloration layer) as a light shielding portion so as to overlap the TFTs of the element substrate.

In this specification, the term red color coloration layer denotes a layer which absorbs a portion of the light irradiated to the coloration layer and outputs red colored light. Furthermore, the term blue color coloration layer similarly denotes a layer which absorbs a portion of the light irradiated to the coloration layer and outputs blue light, and the term green color coloration layer denotes a layer which absorbs a portion of the light irradiated to the coloration layer and outputs green light.

Further, in the respective structures of the above invention, the semiconductor device is characterized in that said semiconductor device has:

In the above structure, the semiconductor device is characterized in that the amount of reflected light of said first light shielding portion differs from the amount of reflected light of said second light shielding portion. Further, said first coloration layer is red colored. Furthermore, said second coloration layer is blue colored. Still further, said third coloration layer is green colored.

Further, in the above structure, the semiconductor device is characterized in that said first light shielding portion and said second light shielding portion are formed on the opposing substrate.

In addition, the present invention is characterized in that a channel etch type bottom gate TFT structure is employed, whereby patterning of a source region and a drain region is performed with the same mask as patterning of the pixel electrode. It is possible to reduce the number of masks by doing so.

Further, in order to realize the above structures, a structure of the present invention is a method of manufacturing a semiconductor device, having:

Further, in the above manufacturing processes, the method is characterized in that said pixel electrode is electrically connected to said channel etch type TFT formed in the same step as said convex portion.

Furthermore, in the above manufacturing processes, the method is characterized in that said semiconductor device is a reflecting type liquid crystal display device in which said pixel electrode is made from a film containing Al or Ag as its main constituent, or a lamination film of said films.

Still further, in the above manufacturing processes, the method is characterized in that said insulating film, said semiconductor film, and said n-type semiconductor film are formed in succession without exposure to the atmosphere.

Moreover, in the above manufacturing processes, the method is characterized in that said insulating film, said semiconductor film, and said n-type semiconductor film are formed by plasma CVD.

Further, in the above manufacturing processes, the method is characterized in that said insulating film, said semiconductor film, and said n-type semiconductor film are formed by sputtering.

An electro-optical device prepared with a pixel TFT portion having a reverse stagger type n-channel TFT, a pixel electrode having a uneven surface, and a storage capacitor can be realized by three photolithography steps using three photomasks in the present invention.

FIG. 1 is a drawing showing the radius of curvature r of a convex portion in a pixel electrode.

FIG. 2 shows diagrams showing a process of manufacturing an AM-LCD.

FIG. 3 shows diagrams showing the process of manufacturing the AM-LCD.

FIG. 4 is a diagram showing the process of manufacturing the AM-LCD.

FIG. 5 is a diagram showing an external view of an AM-LCD.

FIG. 6 is a diagram showing a top view of a pixel.

FIG. 7 is a diagram showing a cross section of a COG type structure.

FIG. 8 is a diagram showing an external view of a COG type structure.

FIG. 9 shows diagrams showing a cross section of a COG type structure.

FIG. 10 shows top views of convex portions.

FIG. 11 is a diagram showing a cross section of an AM-LCD.

FIG. 12 is a diagram showing a cross section of an AM-LCD.

FIG. 13 is a diagram showing a cross section of an AM-LCD.

FIG. 14 is a diagram showing a multi-chamber film deposition device.

FIG. 15 is a diagram showing a single chamber film deposition device.

FIG. 16 shows diagrams showing examples of electronic equipment.

FIG. 17 shows diagrams showing examples of electronic equipment.

Embodiment Mode of The Invention

The embodiment mode of the present invention are explained below using FIGS. 1 to 4, 6, and 10A to 10G.

The present invention possesses, in a pixel portion, a convex portion 107 formed at the same time as a pixel TFT, and a rough portion on the surface of a pixel electrode 108d formed on the convex portion 107.

Further, the present invention is characterized in that specular reflection of the pixel electrode 108d is prevented by making the radius of curvature r of the convex portion of the pixel electrode 108d from 0.1 to 4 μm, preferably from 0.2 to 2 μm, as shown in FIG. 1.

Note that, the present invention is characterized in that an increase in the number of process steps is not necessary in manufacturing unevenness for preventing specular reflection of the pixel electrode 108d, as shown in FIGS. 2 to 4.

As shown in FIGS. 2 to 4, the convex portion 107 is formed using a mask pattern for forming a gate wiring, or a mask pattern for forming the pixel electrode. Further, an example of using a lamination of a first conducting layer 101c, an insulating film 102b, a semiconductor layer 103c, an n-type semiconductor layer 104c, and a second conducting layer 105c, formed when the pixel TFT is manufactured, as the convex portion 107 is shown here, but the convex portion 107 is not limited to this in particular, and a single layer or a lamination of a combination of these layers can be used. For example, as shown in a capacitive portion in FIGS. 2 to 4, the convex portion may be formed from a lamination of the semiconductor layer, the n-type semiconductor layer, and the second conducting layer, and the convex portion may also be formed from a lamination of the first conducting layer and the insulating film. By doing so, a convex portion having a plurality of heights can be formed without increasing the number of process steps. Further, mutually adjacent convex portions are isolated by 0.1 μm or greater, preferably by 1 μm or greater.

Note that an example of forming the convex portions having the first conducting layer 101c and the semiconductor layer 103c which differ in size is shown here, but there is no particular limitation. Note also that the reflected light is well scattered by having random sizes of the convex portions, which is preferable. For example, the convex portions may be formed having a polygonal cross section in the diameter direction, and they may be formed without being symmetrical. For example, any of the shapes shown in FIGS. 10(A) to 10(G) may be used. Further, the convex portions may be arranged regularly or irregularly.

Further, there are no particular limitations on the arrangement of the convex portions, provided that they are under the pixel electrode which becomes the image region of the pixel portion. FIG. 6 shows an example of a top view of a pixel, and in FIG. 6 a region in which a capacitor wiring 101d and the pixel electrode overlay becomes the display region, and therefore unevenness is formed in the surface of the pixel electrode of the lamination of the capacitor wiring 101d, the insulating film 102b, the semiconductor layer, the n-type semiconductor layer, and the second conducting layer.

Furthermore, there are no limitations placed on the size of the convex portion (the surface area as seen from above), but it may be set within a range from 1 to 400 μm2 (preferably between 25 and 100 μm2).

Thus, without increasing the number of manufacturing steps, the present invention can form the pixel electrode having the uneven surface.

An example of forming the pixel electrodes contacting the convex portions is shown here, but one mask may be added and a contact hole may also be formed after covering the convex portions with an insulating film.

When covering the convex portions with the insulating film, unevenness is formed in the surface of the insulating film, and the surface of the pixel electrodes formed on top is also made uneven. The height of the convex portion of the pixel electrodes is made from 0.3 to 3 μm, preferably between 0.5 and 1.5 μm. When incident light is reflected by the roughness formed in the surface of the pixel electrodes, the light can be scattered, as shown in FIG. 4.

Note that an inorganic insulating film or an organic resin film can be used as the insulating film. It is possible to regulate the curvature of the roughness in the pixel electrode by the insulating film material. Further, when using an organic resin as the insulating film, one with a viscosity from 10 to 1000 cp, preferably between 40 and 200 cp, which is sufficiently influenced by the convex portion and forms unevenness in its surface, is used. Note that if a solvent which does not easily evaporate is used, then even though the viscosity of the organic resin film is reduced, unevenness can be formed.

Furthermore, when an inorganic insulating film is used as the insulating film, it functions as a passivation film.

A more detailed explanation of the present invention, structured as above, is performed with the embodiments shown below.

Embodiments

Embodiment 1

An embodiment of the invention is explained using FIGS. 2 to 6. Embodiment 1 shows a method of manufacturing a liquid crystal display device, and detailed description is made, by following the process steps, on a method for forming a channel-etched type TFT for pixel section and a storage capacitor connected to the TFT over the substrate. Further, a manufacturing process for a terminal section, formed in an edge portion of the substrate, and for electrically connecting to wirings of circuits formed on other substrates, is shown at the same time in the same figures.

In FIG. 2(A), a glass substrate, comprising such as barium borosilicate glass or aluminum borosilicate glass, typically Corning Corp. #7059 or #1737, can be used as a substrate 100 having translucency. In addition, a translucent substrate such as a quartz substrate or a plastic substrate can also be used.

Next, after forming a first conductive layer on the entire surface of the substrate, a first photolithography process is performed, a resist mask is formed, unnecessary portions are removed by etching, and wirings and electrodes (a gate wiring 101b including a gate electrode, a first conductive layer 101c, a capacitor wiring 101d and a terminal 101a) are formed. The first conductive layer 101c is arranged in the region surrounded by the gate wirings and the source wirings, namely the region where pixel electrodes are formed and becomes a display region. Note that the shape of the first conductive layer 101c is not specifically limited and its cross section in the diameter direction may be a polygon or the cross section may be an asymmetric shape. For example, the shape of the first conductive layer 101c may be a columnar or a plasmatic shape, or it may further be a cone or a pyramid. Further, etching is performed at this time to form tapered portion at least in the edge of the gate electrode 101b.

It is preferable to form the gate wiring 101b including the gate electrode, the first conductive layer 101c, the capacitor wiring 101d, and the terminal 101a from a low resistivity conductive material such as aluminum (Al) or copper (Cu), but simple Al has problems such as inferior heat resistance and easily corrodes, and therefore it is combined with a heat resistant conductive material. Further, an Ag—Pd—Cu alloy may also be used as the low resistance conductive material. One element selected from the group consisting of titanium (Ti), tantalum (Ta), tungsten (W), molybdenum, (Mo), chromium (Cr), neodymium (Nd) or an alloy comprising the above elements, or an alloy film of a combination of the above elements, or a nitrated compound comprising the above elements is formed as the heat resistant conductive material. For example, a lamination film of Ti and Cu, and a lamination film of TaN and Cu can be given. Furthermore, forming in combination with a heat resistant conductive material such as Ti, Si, Cr, or Nd, it is preferable because of improved levelness. Further, only such heat resistant conductive film may also be formed, for example, in combination with Mo and W.

In realizing the liquid crystal display device, it is preferable to form the gate electrode and the gate wiring by a combination of a heat resistant conductive material and a low resistivity conductive material. An appropriate combination in this case is explained.

Provided that the screen size is on the order of, or less than, 5 inch diagonal type, a two layer structure of a lamination of a conductive layer (A) made from a nitride compound of a heat resistant conductive material, and a conductive layer (B) made from a heat resistant conductive material is used. The conductive layer (B) may be formed from an element selected from the group consisting of Al, Cu, Ta, Ti, W, Nd, and Cr, or from an alloy of the above elements, or from an alloy film of a combination of the above elements, and the conductive layer (A) is formed from a film such as a tantalum nitride (TaN) film, a tungsten nitride (WN) film, or a titanium nitride (TiN) film. For example, it is preferable to use a double layer structure of a lamination of Cr as the conductive layer (A) and Al containing Nd as the conductive layer (B). The conductive layer (A) is given a thickness of 10 to 100 nm (preferably between 20 and 50 nm), and the conductive layer (B) is made with a thickness of 200 to 400 nm (preferably between 250 and 350 nm).

On the other hand, in order to be applied to a large screen, it is preferable to use a three layer structure of a lamination of a conductive layer (A) made from a heat resistant conductive material, a conductive layer (B) made from a low resistivity conductive material, and a conductive layer (C) made from a heat resistant conductive material. The conductive layer (B) made from the low electrical resistance conductive material is formed from a material comprising aluminum (Al), and in addition to pure Al, Al containing between 0.01 and 5 atomic % of an element such as scandium (Sc), Ti, Nd, or silicon (Si), etc., is used. The conductive layer (C) is effective in preventing generation of hillocks in the Al of the conductive layer (B). The conductive layer (A) is given a thickness of 10 to 100 nm (preferably between 20 and 50 nm), the conductive layer (B) is made from 200 to 400 nm thick (preferable between 250 and 350 nm), and the conductive layer (C) is from 10 to 100 nm thick (preferably between 20 and 50 nm). In this Embodiment, the conductive layer (A) is formed from a Ti film with a thickness of 50 nm, made by sputtering with a Ti target, the conductive layer (B) is formed from an Al film with a thickness of 200 nm, made by sputtering with an Al target, and the conductive layer (C) is formed from a 50 nm thick Ti film, made by sputtering with a Ti target.

An insulating film 102a is formed next on the entire surface. The insulating film 102a is formed using sputtering, and has a film thickness of 50 to 200 nm.

For example, a silicon nitride film is used as the insulating film 102a, and formed to a thickness of 150 nm. Of course, the gate insulating film is not limited to this type of silicon nitride film, and another insulating film such as a silicon oxide film, a silicon oxynitride film, or a tantalum oxide film may also be used, and the gate insulating film may be formed from a single layer or a lamination structure made from these materials. For example, a lamination structure having a silicon nitride film as a lower layer and a silicon oxide film as an upper layer may be used.

Next, an amorphous semiconductor film 103a is formed with a thickness of 50 to 200 nm (preferably between 100 and 150 nm) on the insulating film 102a over the entire surface by using a known method such as plasma CVD or sputtering (not shown in the figure). Typically, an amorphous silicon (a-Si) film is formed with a thickness of 100 nm by sputtering using a silicon target. In addition, it is also possible to apply a microcrystalline semiconductor film, or a compound semiconductor film having an amorphous structure, such as an amorphous silicon germanium film (SixGe1-x), where 0≦x≦1), or an amorphous silicon carbide (SixCy).

A second amorphous semiconductor film 104a which contains an impurity element imparting one conductivity type (n-type or p-type) is formed next with a thickness of 20 to 80 nm. The second amorphous semiconductor film which contains an impurity element imparting one conductivity type (n-type or p-type) is formed on the entire surface by a known method such as plasma CVD or sputtering. In this Embodiment, n-type semiconductor film 106, containing an n-type impurity element, is formed using a silicon target in which phosphorous (P) has been added. Alternatively, film deposition may be performed by sputtering using a silicon target in an atmosphere containing phosphorous. In addition, the n-type semiconductor film which contains an impurity element imparting n-type may also be formed from a hydrogenated microcrystalline silicon film (μc-Si:H).

Next, a second conductive film 105a made from a metallic material is formed by sputtering or vacuum evaporation. Provided that ohmic contact with the n-type semiconductor film 104a can be made, there are no particular limitation on the material of the second semiconductor film 105a, and an element selected from the group consisting of Al, Cr, Ta, and Ti, or an alloy comprising the above elements, and an alloy film of a combination of the above elements or the like can be given. Sputtering is used in this Embodiment, and a 50 to 150 nm thick Ti film, an aluminum (Al) film with a thickness between 300 and 400 nm above the Ti film, and a Ti film with a thickness of 100 to 150 nm thereon are formed as the second conductive film 105a. (FIG. 2A.)

The insulating film 102a, the amorphous semiconductor film 103a, the n-type semiconductor film 104a containing an impurity element which imparts n-type conductivity, and the second conductive film 105a are all manufactured by a known method, and can be manufactured by plasma CVD or sputtering. These films (102a, 103a, 104a, and 105a) are formed in succession by sputtering, and suitably changing the target or the sputtering gas in this Embodiment. The same reaction chamber, or a plurality of reaction chambers, in the sputtering apparatus is used at this time, and it is preferable to laminate these films in succession without exposure to the atmosphere. By thus not exposing the films to the atmosphere, the mixing in of impurities can be prevented.

Next, a second photolithography process is then performed, a resist mask 106 is formed, and by removing unnecessary portions by etching, a wiring (becoming a source wiring and a drain electrode by subsequent processing) 105b is formed. Wet etching or dry etching is used as the etching process at this time. The second conductive film 105a, the n-type semiconductor film 104a containing an impurity element which imparts n-type conductivity, and the amorphous semiconductor film 103a are etched in order with the resist mask 106 as a mask. The wiring 105b composed of the second conductive film, a n-type semiconductor film 104b containing an impurity element which imparts n-type conductivity, and an amorphous semiconductor film 103b are each formed in the pixel TFT portion. In this Embodiment, the second conductive film 105a in which the Ti film, the Al film, and the Ti film are laminated in order is etched by dry etching using a gas mixture of SiCl4, Cl2, and BCl3 as a reaction gas, and the reaction gas is substituted with a gas mixture of CF4 and O2, and the amorphous semiconductor film 103a and the n-type semiconductor film 104a, containing the impurity element for imparting n-type conductivity, are selectively removed. (FIG. 2B.) Further, a lamination of a semiconductor layer 103c, an n-type semiconductor layer 104c and a second conductive layer 105c is formed in the area which becomes display region of the pixel portion. A capacitor wiring 101d and an insulating film 102a remained in the capacitor portion, and similarly in the terminal portion a terminal 101a and an insulating film 102a remained.

Next, after removing the resist mask 106, a resist mask is formed using a shadow mask, and the insulating film 102a covering the pad portion of the terminal portion is selectively removed, forming an insulating film 102b, after which the resist mask is removed. (FIG. 2D.) Further, as a substitute for the shadow mask, a resist mask may also be formed by screen printing as an etching mask.

A convex portion 107 which comprises a lamination of a first conductive layer 101c, an insulating film 102b, a semiconductor layer 103c, an s-type semiconductor layer 104c and a second conductive layer 105c is formed in the portion which becomes a display region of the pixel portion, by a second photolithography process. As shown in FIG. 2(B), cross section of the etched surface of the convex portion 107 becomes tiered depending of the etching conditions for the second photolithography process, and the dimension of the cross section becomes gradually larger as it gets nearer to the substrate.

A third conductive film 108a comprising a conductive film having reflectivity is next deposited over the entire surface. (FIG. 3(A)) A material which has reflective property, such as Al, Ag, etc., may be used as the third conductive film 108a.

The third photolithography process is next performed, resist mask 109 is formed, unnecessary portions are removed by etching, and amorphous semiconductor film 103e, source region 104e, drain region 104f, source electrode 105e, drain electrode 105f and pixel electrode 108d are formed. (FIG. 3(B))

The third photolithography process patterns the third conductive film 108a, and at the same time removes a part of the wiring 105b, the n-type semiconductor film 104b containing an impurity element which imparts n-type conductivity and the amorphous semiconductor film 103b by etching, forming an opening. Note that the etching may be performed in this third photography process by only dry etching in which the operator properly chooses the reaction gas, or it may be performed by only wet etching by properly choosing the reaction solution, or dry etching and wet etching may be suitably used.

Further, the lower portion of the opening reaches the amorphous semiconductor film, and the amorphous semiconductor film 103e is formed having a concave portion. The wiring 105b is separated into the source wiring 105e and the drain electrode 105f by the opening, and the n-type semiconductor film 104, containing an impurity element which imparts n-type conductivity is separated into the source region 104e and the drain region 104f. Furthermore, the third conductive film 108c contacting the source wiring covers the source wiring, and during subsequent manufacturing processes, especially during a rubbing process, fulfills a role of preventing static electricity from developing. An example of forming the third conductive film 108c on the source wiring is shown in this Embodiment, but the third conductive film 108c may also be removed.

Moreover, a storage capacitor is formed in the third photolithography process by the capacitor wiring 101d and the pixel electrode 108d, with the insulating film 102b in the capacitor portion as a dielectric.

In addition, because the pixel electrode 108d is formed on the convex portion 107, light scattering property can be devised by providing roughness on the surface of the pixel electrode 108d. Note that FIG. 6 shows an example of the top view of the pixel portion. Same symbols are used for the sections corresponding to FIGS. 2 and 3.

The third conductive film 108b comprising a conductive film formed in the terminal portion is left by covering with the resist mask 109 during the third photolithography process.

By thus using three photomasks and performing three photolithography processes, the pixel TFT portion having the reverse stagger type n-channel type TFT and the storage capacitor can be completed.

Note that an example of the top view of the pixel is shown in FIG. 6. In FIG. 6, the region in which the capacitor wiring 101d and the pixel electrode overlap becomes a display region, unevenness is formed on the surface of the pixel electrode by the laminate of the capacitor wiring 101d, the insulating film 102b, the semiconductor layer, the n-type semiconductor layer and the second conductive layer. Further, same symbols are used for the sections corresponding to FIGS. 2 to 4.

Though it was necessary to add the process for forming the uneven portions conventionally, the present Embodiment formed the uneven portion on the pixel electrode without increasing the process at all, because the uneven portions are manufactured at the same time with the TFTs.

Thus by structuring a pixel portion by arranging them in correspondent to the respective pixels, one substrate for manufacturing an active matrix electro-optical device can be formed. In this specification such substrate is referred to active matrix substrate for convenience.

An alignment film 110 is selectively formed next in only the pixel portion of the active matrix substrate. Screen printing may be used as a method of selectively forming the alignment film 110, and a method of removal in which a resist mask is formed using a shadow mask after application of the alignment film may also be used. Normally, a polyimide resin is often used in the alignment film of the liquid crystal display element.

Next, a rubbing process is then performed on the alignment film 110, orienting the liquid crystal elements so as to possess a certain fixed pre-tilt angle.

An opposing substrate 112 is next prepared. Coloring layers 113 and 114 and planarization film 115 are formed on the opposing substrate 112. A second light shielding portion is formed by partially overlapping the red colored coloring layer 113 and the blue colored coloring layer 114. Note that though not shown in FIG. 4, a first light shielding portion is formed by partially overlapping the red coloring layer and the green coloring layer.

An opposing electrode 116 is next formed in the pixel portion, an alignment film 117 is formed on the entire surface of the opposing substrate and rubbing treatment is performed so that the liquid crystal molecules are oriented having a certain constant pre-tilt angle.

Next after sticking the active matrix substrate and the opposing substrate 112 together by a sealant by holding a distance between the substrates with columnar or sphere spacers, a liquid crystal material 111 is injected between the active matrix substrate and the opposing substrate. A known material may be used for the liquid crystal material 111 and the opening for injection is sealed by a resin material.

Next, a flexible printed circuit (FPC) is connected to the input terminal 101a of the terminal portion. The FPC is formed by a copper wiring 119 on an organic resin film 118 such as polyimide, and is connected to the third conductive film covering the input terminal by an anisotropic conductive adhesive. The anisotropic conductive adhesive comprises an adhesive 120 and particles 121, with a diameter of several tens to several hundred of μm and having a conductive surface plated by a material such as gold, which are mixed therein. The particles 121 form an electrical connection in this portion by connecting the third conductive film 108b on the input terminal 101a and the copper wiring 119. In addition, in order to increase the mechanical strength of this region, a resin layer 122 is formed.

FIG. 5 is a diagram explaining the placement of the pixel portion and the terminal portion of the active matrix substrate. A pixel portion 211 is formed on a substrate 210, gate wirings 208 and source wirings 207 are formed intersecting on the pixel portion, and the n-channel TFT 201 connected to this is formed corresponding to each pixel. The pixel electrode 1086 and a storage capacitor 202 are connected to the drain side of the n-channel TFT 201, and the other terminal of the storage capacitor 202 is connected to a capacitor wiring 209. The structure of the n-channel TFT and the storage capacitor is the same as that of the n-channel TFT and the storage capacitor shown in FIG. 4.

An input terminal portion 205 for inputting a scanning signal is formed in one edge portion of the substrate, and is connected to a gate wiring 208 by a connection wiring 206. Further, an input terminal portion 203 for inputting an image signal is formed in the other edge portion, and is connected to a source wiring 207 by a connection wiring 204. A plurality of the gate wiring 208, the source wiring 207, and the capacitor wiring 209 are formed in accordance with the pixel density. Furthermore, an input terminal portion 212 for inputting an image signal and a connection wiring 213 may be formed, and may be connected to the source wiring alternately with the input terminal portion 203. An arbitrary number of the input terminal portions 203, 205, and 212 are formed, which may be suitably determined by the operator.

Embodiment 2

FIG. 7 is an example of a method of mounting a liquid crystal display device. The liquid crystal display device has an input terminal portion 302 formed in an edge portion of a substrate 301 on which TFTs are formed, and as shown by embodiment 1, this is formed by a terminal 303 formed from the same material as a gate wiring. An opposing substrate 304 is joined to the substrate 301 by a sealant 305 encapsulating spacers 306, and in addition, polarizing plate 307 is formed. This is then fixed to a casing 321 by spacers 322.

Note that the TFT obtained in Embodiment 1 having an active layer formed by an amorphous semiconductor film has a low electric field effect mobility, and only approximately 1 cm2/Vsec is obtained. Therefore, a driver circuit for performing image display is formed by an IC chip, and mounted by a TAB (tape automated bonding) method or by a COG (chip on glass) method. In this Embodiment, an example is shown of forming the driver circuit in an IC chip 313, and mounting by using the TAB method. A flexible printed circuit (FPC) is used, and the FPC is formed by a copper wiring 310 on an organic resin film 309, such as polyimide, and is connected to the input terminal 302 by an anisotropic conductive adhesive. The input terminal is a conductive film formed on and contacting the wiring 303. The anisotropic conductive adhesive is structured by an adhesive 311 and particles 312, with a diameter of several tens to several hundred of μm and having a conductive surface plated by a material such as gold, which are mixed therein. The particles 312 form an electrical connection in this portion by connecting the input terminal 302 and the copper wiring 310. In addition, in order to increase the mechanical strength of this region, a resin layer 318 is formed.

The IC chip 313 is connected to the copper wiring 310 by a bump 314, and is sealed by a resin material 315. The copper wiring 310 is then connected to a printed substrate 317 on which other circuits such as a signal processing circuit, an amplifying circuit, and a power supply circuit are formed, through a connecting terminal 316. In the reflection type liquid crystal display device shown here, a device which is capable of display by introducing light from the light source using light conductor plate 320 is provided, namely an LED light source 319, diffraction plate 323 and a light conductor 320 are provided on the opposing substrate 304 in a reflection type liquid crystal display device incorporating a front light.

Embodiment 3

FIG. 8 is a diagram which schematically shows a state of constructing an electro-optical display device by using the COG method. A pixel region 803, an external input-output terminal 804, and a connection wiring 805 are formed on a first substrate. Regions surrounded by dotted lines denote a region 801 for attaching a scanning line side IC chip, and a region 802 for attaching a data line side IC chip. An opposing electrode 809 is formed on a second substrate 808, and this is joined to the first substrate 800 by using a sealing material 810. A liquid crystal layer 811 is formed inside the sealing material 810 by injecting a liquid crystal. The first substrate and the second substrate are joined with a predetermined gap, and this is set from 3 to 8 μm for a nematic liquid crystal, and it is set at between 1 and 4 μm for the case of smetic liquid crystal.

IC chips 806 and 807 have circuit structures which differ between the data line side and the scanning line side. The IC chips are mounted on the first substrate. An FPC (flexible printed circuit) 812 is attached to the external input-output terminal 804 in order to input power supply and control signals from the outside. In order to increase the adhesion strength of the FPC 812, a reinforcing plate 813 may be formed. The electro-optical device can thus be completed. If an electrical inspection is performed before mounting the IC chips on the first substrate, then the final process yield of the electro-optical device can be improved, and the reliability can be increased.

Further, a method such as a method of connection using an anisotropic conductive material or a wire bonding method, can be employed as the method of mounting the IC chips on the first substrate. FIG. 9 show an example of such. FIG. 9(A) shows an example in which an IC chip 908 is mounted on a first substrate 901 using an anisotropic conductive material. A pixel region 902, a lead wire 906, a connection wiring and an input-output terminal 907 are formed on the first substrate 901. A second substrate is bonded to the first substrate 901 by using a sealing material 904, and a liquid crystal layer 905 is formed therebetween.

Further, an FPC 912 is bonded to one edge of the connection wiring and the input-output terminal 907 by using an anisotropic conductive material. The anisotropic conductive material is made from a resin 915 and conductive particles 914 having a diameter of several tens to several hundred of μm and plated by a material such as Au, and the wiring 913 formed with the FPC 912 and the connection wiring and input-output terminal 907 are electrically connected by the conductive particles 914. The IC chip 908 is similarly bonded to the first substrate by an anisotropic conductive material. An input-output terminal 909 provided with the IC chip 908 and the lead wire 906, or a connection wiring and the input-output terminal 907 are electrically connected by conductive particles 910 mixed into a resin 911.

Furthermore, as shown by FIG. 9(B), the IC chip may be fixed to the first substrate by an adhesive material 916, and an input-output terminal and a lead wire of the stick driver or a connection wiring may be connected by an Au wire 917. Then, this is all sealed by a resin 918.

The method of mounting the IC chip is not limited to the method based on FIGS. 8 and 9, and it is also possible to use a known method not explained here, such as a COG method, a wire bonding method or a TAB method.

It is possible to freely combine this Embodiment with Embodiment 1 or 2.

Embodiment 4

An example of forming a pixel electrode which has unevenness of the surface without the number of process steps is described in this Embodiment. Note that only the points that differ from Embodiment 1 are explained for the simplification.

This Embodiment is an example of forming the first conductive layers 1101a and 1101b and a lamination 1103 comprising an amorphous semiconductor film with a different pitch from the first conductive layers 1101a and 1101b, an n-type semiconductor film containing an impurity element which imparts n-type and a second conductive layer after forming an insulating film 1102, as shown in FIG. 11.

The first conductive layers 1101a and 1101b can be formed by altering the mask of Embodiment 1, without increasing the number of masks. The first conductive layers 1101a and 1101b are formed by changing the first mask at the formation of the gate electrode 1100 of Embodiment 1. Further, the lamination 1103 is formed by changing the second mask of Embodiment 1.

By doing so, the unevenness formed on the surface of the pixel electrode 1104 can be differed in their size and at the same time the arrangement of the uneven portions can be made random without increasing the number of process steps, thereby enabling more dispersion of the reflection of light.

Note that this Embodiment can be freely combined with any of the Embodiments 1 to 3.

Embodiment 5

This Embodiment shows an example of forming a pixel electrode which has unevenness of the surface, without increasing the number of process steps. Note that only the points that differ from Embodiment 1 are explained for the simplification.

This Embodiment is an example of forming a convex portions 1201 and 1202 which have different heights as shown in FIG. 12.

The convex portions 1201 and 1202 can be formed by changing the mask of Embodiment 7 without increasing the number of masks. In this Embodiment the height of the convex portion 1202 is lower than that of the convex portion 1201 by the amount of film thickness of the first conductive layer, because the mask which does not form the first conductive layer on the convex portion 1202 is used in the patterning of the gate electrodes as shown in FIG. 12. The mask used for the patterning of the first conductive layer used in Embodiment 7 is changed in this Embodiment to form 2 kinds of convex portions 1201 and 1202 that have different heights, in random in the area which becomes a display region.

Accordingly the difference in heights of the convex and concave formed on the surface of the pixel electrode 1200 can be made large without increasing the number of process steps, and further the reflection light can be scattered.

Note this Embodiment can be freely combined with any one of Embodiments 1 to 4.

Embodiment 6

In this Embodiment, an example of forming a protecting film is shown in FIG. 13. Note that this Embodiment is identical to Embodiment 1 through the state of FIG. 3B, and therefore only points of difference are explained.

After first forming through the state of FIG. 3B in accordance with Embodiment 1, a thin inorganic insulating film is formed on the entire surface. An inorganic insulating film formed by using plasma CVD or sputtering such as a silicon oxide film, a silicon nitride film, a silicon oxynitride film, or a tantalum oxide film is used as the thin inorganic insulating film, and a single layer or a lamination structure made from these materials may be formed.

A forth photolithography process is performed next, forming a resist mask, and unnecessary portions are removed by etching, forming an insulating film 1300 in the pixel TFT portion. The inorganic insulating film 1300 functions as a passivation film. Further, the thin inorganic insulating film 1300 is removed in the terminal portion by the fourth photolithography process, exposing the third conductive film, made from the conductive film, formed on the terminal 101a of the terminal portion.

The reverse stagger type n-channel TFT and the storage capacitor, protected by the inorganic insulating film, can thus be completed in this Embodiment by performing the photolithography process using four photomasks four times in total. By thus structuring the pixel portion by arranging these into a matrix state corresponding to each pixel, one substrate for manufacturing the active matrix electro-optical device can be made.

Note that it is possible to freely combine this Embodiment with any one of Embodiments 1 to 4.

Embodiment 7

In Embodiment 1 an example of forming an insulating film, an amorphous semiconductor film, an n-type semiconductor film containing an impurity element which imparts n-type conductivity, and a second conductive film by sputtering, but this Embodiment shows an example of using plasma CVD to form the films.

The insulating film, the amorphous semiconductor film, and the s-type semiconductor film containing an impurity element which imparts n-type conductivity are formed in this Embodiment by plasma CVD.

In this Embodiment, a silicon oxynitride film is used as the insulating film, and formed with a thickness of 150 nm by plasma CVD. Plasma CVD may be performed at this point with a power supply frequency of 13 to 70 MHZ, preferably between 27 and 60 MHZ. By using a power supply frequency of 27 to 60 MHZ, a dense insulating film can be formed, and the voltage resistance can be increased as a gate insulating film. Further, a silicon oxynitride film manufactured by adding N2O to SiH4 and NH3 has a reduction in fixed electric charge density, and therefore is a material which is preferable for this use. Of course, the gate insulating film is not limited to this type of silicon oxynitride film, and a single layer or a lamination structure using other insulating films such as s silicon oxide film, a silicon nitride film, or a tantalum oxide film may be formed. Further, a lamination structure of a silicon nitride film in a lower layer, and a silicon oxide film in an upper layer may be used.

For example, when using a silicon oxide film, it can be formed by plasma CVD using a mixture of tetraethyl orthosilicate (TEOS) and O2, with the reaction pressure set to 40 Pa, a substrate temperature of 250 to 350° C., and discharge at a high frequency (13.56 MHZ) power density of 0.5 to 0.8 W/cm2. Good characteristics as the gate insulating film can be obtained for the silicon oxide film thus formed by a subsequent thermal anneal at 300 to 400° C.

Further, a hydrogenated amorphous silicon (a-Si:H) film is typically formed with a thickness of 100 nm by plasma CVD as the amorphous semiconductor film. At this point, plasma CVD may be performed with a power supply frequency of 13 to 70 MHZ, preferably between 27 and 60 MHZ, in the plasma CVD apparatus. By using a power frequency of 27 to 60 MHZ, it becomes possible to increase the film deposition speed, and the deposited film is preferable because it becomes an a-Si film having a low defect density. In addition, it is also possible to apply a microcrystalline semiconductor film and a compound semiconductor film having an amorphous structure, such as an amorphous silicon germanium film, as the amorphous semiconductor film.

Further, if 100 to 100 k Hz pulse modulation discharge is performed in the plasma CVD film deposition of the insulating film and the amorphous semiconductor film, then particle generation due to the plasma CVD gas phase reaction can be prevented, and pinhole generation in the formed film can also be prevented, and therefore is preferable.

Further, in this Embodiment an n-type semiconductor film, containing an impurity element which imparts n-type conductivity is formed with a thickness of 20 to 80 nm as a semiconductor film containing a single conductivity type impurity element. For example, an a-Si:H film containing an n-type impurity element may be formed, and in order to do so, phosphine (PH3) is added at a 0.1 to 5% concentration to silane (SiH4). Alternatively, a hydrogenated microcrystalline silicon film (μc-Si:H) may also be used as a substitute for the n-type semiconductor film 106, containing an impurity element which imparts n-type conductivity.

These films can be formed in succession by appropriately changing the reaction gas. Further, these films can be laminated successively without exposure to the atmosphere at this time by using the same reaction chamber or a plurality of reaction chambers in the plasma CVD apparatus. By thus depositing successively these films without exposing the films to the atmosphere, the mixing in of impurities into the amorphous semiconductor film can be prevented.

Note that it is possible to combine this Embodiment with any one of Embodiments 1 to 6.

Embodiment 8

Examples are shown in Embodiments 1 to 7 of laminating an insulating film, an amorphous semiconductor film, an n-type semiconductor film containing an impurity element which imparts n-type conductivity, and a second conductive film, in order and in succession. An example of an apparatus prepared with a plurality of chambers, and used for cases of performing this type of successive film deposition is shown in FIG. 14.

An outline of an apparatus (successive film deposition system), shown in this Embodiment, is shown in FIG. 14 as seen from above. Reference numerals 10 to 15 in FIG. 14 denote chambers having airtight characteristics. A vacuum evacuation pump and an inert gas introduction system are arranged in each of the chambers.

The chambers denoted by reference numerals 10 and 15 are load-lock chambers for bringing test pieces (processing substrates) 30 into the system. The chamber denoted by reference numeral 11 is a first chamber for deposition of the insulating film 102a. The chamber denoted by reference numeral 12 is a second chamber for deposition of the amorphous semiconductor film 103a. The chamber denoted by reference numeral 13 is a third chamber for deposition of the n-type semiconductor film 104a which imparts n-type conductivity. The chamber denoted by reference numeral 14 is a fourth chamber for deposition of the second conductive film 105a. Further, reference numeral 20 denotes a common chamber of the test pieces, arranged in common with respect to each chamber.

An example of operation is shown below.

After pulling an initial high vacuum state in all of the chambers at first, a purge state (normal pressure) is made by using an inert gas, nitrogen here. Furthermore, a state of closing all gate valves 22 to 27 is made.

First, a cassette 28 loaded with a multiple number of processing substrates is placed into the load-lock chamber 10. After the cassette is placed inside, a door of the load-lock chamber (not shown in the figure) is closed. In this state, the gate valve 22 is opened and one of the processing substrates 30 is removed from the cassette, and is taken out to the common chamber 20 by a robot arm 21. Position alignment is performed in the common chamber at this time. Note that a substrate on which the first conductive layers 101a to 101d are formed, obtained in accordance with Embodiment 1, is used for the substrate 30.

The gate valve 22 is then closed, and a gate valve 23 is opened next. The processing substrate 30 is then moved into the first chamber 11. Film deposition processing is performed within the first chamber at a temperature of 150 to 300° C., and the insulating film 102a is obtained. Note that a film such as a silicon nitride film, a silicon oxide film, a silicon oxynitride film, or a lamination film of these films, can be used as the insulating film. A single layer silicon nitride film is employed in this Embodiment, but a two-layer, three-layer, or higher layer lamination structure film may also be used. Note that a chamber capable of plasma CVD is used here, but a chamber which is capable of sputtering by use of a target may also be used.

After completing the deposition of the insulating film, the processing substrate is pulled out into the common chamber by the robot arm, and is then transported to the second chamber 12. Film deposition is performed within the second chamber at a temperature of 150 to 300° C., similar to that of the first chamber, and the amorphous semiconductor film 103a is obtained by plasma CVD. Note that a film such as a microcrystalline semiconductor film, an amorphous germanium film, an amorphous silicon germanium film, or a lamination film of these films can be used as the amorphous semiconductor film. Further, a heat treatment process for reducing the concentration of hydrogen may be omitted with a formation temperature of 350 to 500° C. for the amorphous semiconductor film. Note that a chamber capable of plasma CVD is used here, but a chamber which is capable of sputtering by use of a target may also be used.

After completing deposition of the amorphous semiconductor film, the processing substrate is pulled out into the common chamber and then transported to the third chamber 13. Film deposition process is performed within the third chamber at a temperature of 150 to 300° C., similar to that of the second chamber, and the n-type semiconductor film 104a, containing an impurity element which imparts n-type conductivity (P or As), is obtained by plasma CVD. Note that a chamber capable of plasma CVD is used here, but a chamber which is capable of sputtering by use of a target may also be used.

After completing deposition of the n-type semiconductor film containing an impurity element which imparts n-type conductivity, the processing substrate is pulled out into the common chamber, and then is transported to the fourth chamber 14. The second conductive film 105a is obtained within the fourth chamber by sputtering using a metallic target.

The processed substrate, on which four layers have thus been formed in succession, is then transported to the load-lock chamber 15 by the robot arm, and is contained in a cassette 29.

Note that the apparatus shown in FIG. 14 is only one example. Further, it is possible to freely combine this Embodiment with any one of Embodiments 1 to 7.

Embodiment 9

Embodiment 8 showed an example of laminating the films in succession by using a plurality of cambers, whereas the films are laminated successively by holding a high vacuum in a single chamber in this Embodiment by using an apparatus shown in FIG. 15.

An apparatus system shown in FIG. 15 is used in this Embodiment. In FIG. 15, the reference numeral 40 denotes a processing substrate; 50, a common chamber; 44 and 46, load-lock chambers; 45, a chamber; and 42 and 43, cassettes. In this Embodiment lamination is formed in a same chamber in order to prevent contamination generated in transporting the substrates.

This Embodiment can be freely combined with any one of Embodiments 1 to 7.

Note however when applying to the Embodiment 1, a plurality of targets are prepared in the chamber 45, so that the insulating film 102a, the amorphous semiconductor film 103a, the n-type semiconductor film 104a containing an impurity element which imparts n-type and the second conductive film 105a by switching the reactive gas in order.

Embodiment 10

Embodiment 1 showed an example of forming the n-type semiconductor film containing an impurity element which imparts n-type by sputtering, but this Embodiment shows an example of forming the film by plasma CVD. Note that since this Embodiment is identical to Embodiment 1 except for the process for forming the n-type semiconductor film containing an impurity element which imparts n-type, only the points that differ are described below.

The n-type semiconductor film containing an impurity element which imparts n-type can be obtained by using plasma CVD, and by adding phosphine (PH3) in a concentration between 0.1 and 5% with respect to the silane (SiH4) as the reaction gas.

Embodiment 11

While Embodiment 10 shows an example of forming the n-type semiconductor film containing an impurity element which imparts n-type by plasma CVD, this Embodiment shows an example of using a microcrystalline semiconductor film containing an impurity element which imparts n-type.

A microcrystalline silicon film can be obtained by setting the deposition temperature 80 to 300° C., preferably 140 to 200° C., using a reaction gas of mixed gas of silane gas diluted with hydrogen (SiH4:H2=1:10-100) and phosphine, setting the gas pressure at 0.1 to 10 Torr and setting the discharge power at 10 to 300 mW/cm2. In addition, the film may be formed by adding phosphorus by plasma doping after depositing the microcrystalline silicon film.

Embodiment 12

A bottom gate type TFT formed by implementing any one of the above Embodiments 1 to 11 can be used in various electro-optical devices (such as an active matrix liquid crystal display device and an active matrix EC display device). Namely, the present invention can be implemented in all electronic appliance in which these electro-optical devices are built into a display portion.

The following can be given as such electronic appliance: a video camera, a digital camera, a head-mounted display (goggle type display), a car navigation system, a car stereo, a personal computer, and a portable information terminal (such as a mobile computer, a portable telephone or an electronic book). Examples of these are shown in FIGS. 16 and 17.

FIG. 16A is a personal computer, and it includes a main body 2001, an image input portion 2002, a display portion 2003, and a keyboard 2004, etc. The present invention can be applied to the display portion 2003.

FIG. 16B is a video camera, and it includes a main body 2101, a display portion 2102, an audio input portion 2103, operation switches 2104, a battery 2105, and an image receiving portion 2106, etc. The present invention can be applied to the display portion 2102.

FIG. 16C is a mobile computer, and it includes a main body 2201, a camera portion 2202, an image receiving portion 2203, operation switches 2204, and a display portion 2205, etc. The present invention can be applied to the display portion 2205.

FIG. 16D is a goggle type display, and it includes a main body 2301, a display portion 2302, an arm portion 2303, etc. The present invention can be applied to the display portion 2302.

FIG. 16E is a player that uses a recording medium on which a program is recorded (hereafter referred to as a recording medium), and the player includes a main body 2401, a display portion 2402, a speaker portion 2403, a recording medium 2404, and operation switches 2405, etc. Note that this player uses a recording medium such as a DVD (digital versatile disk) or a CD, and the appreciation of music, the appreciation of film, game playing and the Internet can be performed. The present invention can be applied to the display portion 2402.

FIG. 16F is a digital camera, and it includes a main body 2501, a display portion 2502, an eyepiece portion 2503, operation switches 2504, and an image receiving portion (not shown in the figure), etc. The present invention can be applied to the display portion 2502.

FIG. 17A is a portable telephone, and it includes a main body 2901, an audio output portion 2902, an audio input portion 2903, a display portion 2904, operation switches 2905, and an antenna 2906, etc. The present invention can be applied to the display portion 2904.

FIG. 17B is a portable book (electronic book), and it includes a main body 3001, display portions 3002 and 3003, a recording medium 3004, operation switches 3005, and an antenna 3006, etc. The present invention can be applied to the display portions 3002 and 3003.

FIG. 17C is a display, and it includes a main body 3101, a support stand 3102, and a display portion 3103, etc. The present invention can be applied to the display portion 3103. The display of the present invention is advantageous for a large size screen in particular, and is advantageous for a display equal to or greater than 10 inches (especially equal to or greater than 30 inches) in the opposite angle.

The applicable range of the present invention is thus extremely wide, and it is possible to apply the present invention to electronic equipment in all fields. Further, the electronic equipment of this embodiment can be realized by using a constitution of any combination of embodiments 1 to 11.

Yamazaki, Shunpei

Patent Priority Assignee Title
Patent Priority Assignee Title
3967981, Jan 14 1971 TDK CORPORATION, A CORP OF JAPAN Method for manufacturing a semiconductor field effort transistor
4458987, Jul 23 1980 Hitachi, Ltd. Multi-layer liquid crystal panel with sealing members and retainers in registration
4624737, Aug 21 1984 LG DISPLAY CO , LTD Process for producing thin-film transistor
4730903, Jan 23 1985 SEMICONDUCTOR ENERGY LABORATORY CO , LTD , A CORP OF JAPAN Ferroelectric crystal display panel and manufacturing method thereof
4914503, Aug 12 1986 Fujitsu Limited Semiconductor device
4960719, Feb 04 1988 SEIKO PRECISION INC Method for producing amorphous silicon thin film transistor array substrate
5028551, Mar 06 1986 Kabushiki Kaisha Toshiba Electrode interconnection material, semiconductor device using this material and driving circuit substrate for display device
5084961, Apr 09 1990 Micro Gijutsu Kenkyujyo Co., Ltd. Method of mounting circuit on substrate and circuit substrate for use in the method
5151806, Apr 27 1990 Mitsubishi Denki Kabushiki Kaisha Liquid crystal display apparatus having a series combination of the storage capacitors
5231039, Feb 25 1988 Sharp Kabushiki Kaisha Method of fabricating a liquid crystal display device
5261156, Feb 28 1991 Semiconductor Energy Laboratory Co., Ltd. Method of electrically connecting an integrated circuit to an electric device
5346833, Apr 05 1993 Industrial Technology Research Institute Simplified method of making active matrix liquid crystal display
5362660, Oct 05 1990 General Electric Company Method of making a thin film transistor structure with improved source/drain contacts
5418635, Feb 19 1992 Sharp Kabushiki Kaisha Liquid crystal device with a reflective substrate with bumps of photosensitive resin which have 2 or more heights and random configuration
5428250, Nov 30 1989 Kabushiki Kaisha Toshiba Line material, electronic device using the line material and liquid crystal display
5459598, Jan 15 1992 Central Research Laboratories Limited Optical modulation device with liquid crystal voids formed by the spacer arrangements
5466617, Mar 20 1992 U.S. Philips Corporation Manufacturing electronic devices comprising TFTs and MIMs
5478766, Mar 03 1994 SAMSUNG DISPLAY CO , LTD Process for formation of thin film transistor liquid crystal display
5491352, Jul 09 1991 Yamaha Corporation Semiconductor device having peripheral metal wiring
5532180, Jun 02 1995 Innolux Corporation Method of fabricating a TFT with reduced channel length
5539219, May 19 1995 Innolux Corporation Thin film transistor with reduced channel length for liquid crystal displays
5561074, Apr 22 1994 VISTA PEAK VENTURES, LLC Method for fabricating reverse-staggered thin-film transistor
5561440, Aug 08 1990 Hitachi Displays, Ltd Liquid crystal display device and driving method therefor
5583675, Apr 27 1993 Sharp Kabushiki Kaisha Liquid crystal display device and a method for producing the same
5622814, Apr 20 1988 Matsushita Electric Industrial Co., Ltd. Method for fabricating active substrate
5644147, Jul 07 1994 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device incorporating pixel transistors with plural gate electrodes
5648662, Jun 19 1991 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device with amorphous and crystalline shift registers
5668379, Jul 27 1994 PANASONIC LIQUID CRYSTAL DISPLAY CO , LTD Active matrix crystal display apparatus using thin film transistor
5668651, Mar 18 1994 Sharp Kabushiki Kaisha Polymer-wall LCD having liquid crystal molecules having a plane-symmetrical bend orientation
5684318, May 28 1993 U.S. Philips Corporation Electronic devices with thin-film circuit elements forming a sampling circuit
5706064, Mar 31 1995 Kabushiki Kaisha Toshiba LCD having an organic-inorganic hybrid glass functional layer
5710612, Sep 01 1989 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal device and manufacturing method therefor with anisotropic conductive adhesive connecting glass substrate and glass auxiliary substrate
5729312, Mar 18 1994 Sharp Kabushiki Kaisha LCD and method for producing the same in which a larger number of substrate gap control materials is larger in the polymer walls than in the liquid crystal regions
5734177, Oct 31 1995 Sharp Kabushiki Kaisha Semiconductor device, active-matrix substrate and method for fabricating the same
5739549, Jun 14 1994 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor having offset region
5739880, Dec 01 1995 PANASONIC LIQUID CRYSTAL DISPLAY CO , LTD Liquid crystal display device having a shielding film for shielding light from a light source
5739882, Nov 18 1991 SEMICONDUCTOR ENERGY LABORATORY CO , LTD LCD polymerized column spacer formed on a modified substrate, from an acrylic resin, on a surface having hydrophilic and hydrophobic portions, or at regular spacings
5739887, Oct 21 1994 PANASONIC LIQUID CRYSTAL DISPLAY CO , LTD Liquid crystal display device with reduced frame portion surrounding display area
5744820, Aug 24 1994 Sharp Kabushiki Kaisha Liquid crystal display device with a disconnected wiring pattern attached by independent metal wiring
5757453, May 09 1995 LG DISPLAY CO , LTD Liquid crystal display device having storage capacitors of increased capacitance and fabrication method therefor
5757456, Mar 10 1995 Semiconductor Energy Laboratory Co., Ltd. Display device and method of fabricating involving peeling circuits from one substrate and mounting on other
5760854, Jul 27 1994 PANASONIC LIQUID CRYSTAL DISPLAY CO , LTD Liquid crystal display apparatus
5766977, Mar 27 1995 Semiconductor Energy Laboratory Co., Ltd. Method for producing semiconductor device
5780872, May 17 1988 Seiko Epson Corporation Liquid crystal device, projection type color display device and driving circuit
5793072, Aug 09 1996 AU Optronics Corporation Non-photosensitive, vertically redundant 2-channel α-Si:H thin film transistor
5798812, Sep 28 1995 Sharp Kabushiki Kaisha Active matrix substrate and display device using the same with extending protrusions between gate and source line terminals
5804501, Nov 23 1994 LG Semicon Co., Ltd. Method for forming a wiring metal layer in a semiconductor device
5811318, Dec 28 1995 SAMSUNG DISPLAY CO , LTD Method for manufacturing a liquid crystal display
5811328, Jun 19 1991 Semiconductor Energy Laboratory Co, Ltd. Electro-optical device and thin film transistor and method forming the same
5811835, Aug 23 1995 Kabushiki Kaisha Toshiba Thin-film transistor with edge inclined gates and liquid crystal display device furnished with the same
5811846, Apr 03 1993 JAPAN DISPLAY CENTRAL INC Thin-film transistor and display device using the same
5818070, Jul 07 1994 Semiconductor Energy Laboratory Company, Ltd. Electro-optical device incorporating a peripheral dual gate electrode TFT driver circuit
5821138, Feb 16 1995 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device using a metal which promotes crystallization of silicon and substrate bonding
5821622, Mar 12 1993 JAPAN DISPLAY CENTRAL INC Liquid crystal display device
5825449, Aug 19 1995 LG DISPLAY CO , LTD Liquid crystal display device and method of manufacturing the same
5828433, Aug 19 1995 LG DISPLAY CO , LTD Liquid crystal display device and a method of manufacturing the same
5830785, Mar 16 1993 Kinetics Technology International Corporation Direct multilevel thin-film transistors production method
5831710, Feb 06 1997 AU Optronics Corporation Liquid crystal display
5834327, Mar 18 1995 Semiconductor Energy Laboratory Co., Ltd. Method for producing display device
5838400, Oct 21 1994 PANASONIC LIQUID CRYSTAL DISPLAY CO , LTD Liquid crystal display device with reduced frame portion surrounding display area
5844643, Sep 14 1995 Sharp Kabushiki Kaisha Liquid crystal display device with at least 7°C liquid crystal to isotropic phase transition temperature difference and method of making
5847687, Mar 26 1996 Semiconductor Energy Laboratory Co., Ltd. Driving method of active matrix display device
5849601, Dec 25 1990 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
5852487, Jan 25 1996 Sharp Kabushiki Kaisha LCD device having an input function and polymer substrates having dual function
5867233, Mar 28 1996 VISTA PEAK VENTURES, LLC Active matrix liquid crystal display substrate with island structure covering break in signal bus line and method of producing same
5872611, Jul 27 1993 Sharp Kabushiki Kaisha Liquid crystal display having two or more spacings between electrodes
5874326, Jul 27 1996 LG DISPLAY CO , LTD Method for fabricating thin film transistor
5880794, Mar 15 1996 LG DISPLAY CO , LTD Active matrix liquid crystal display and method with two anodizations
5888855, Dec 14 1994 KABUSGIKI KAISHA TOSHIBA Method of manufacturing active matrix display
5889291, Apr 22 1994 Semiconductor Energy Laboratory Co., Ltd. Semiconductor integrated circuit
5892562, Dec 20 1995 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal electro-optic device
5899547, Nov 26 1990 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and driving method for the same
5903326, Mar 15 1993 SAMSUNG DISPLAY CO , LTD Trainable RF system for remotely controlling household appliances
5907380, Oct 30 1997 InfoVision Optoelectronics Holdings Limited; SHIN KOH DEN TECHNOLOGY LIMITED Liquid crystal cell employing thin wall for pre-tilt control
5917564, Nov 13 1996 SAMSUNG DISPLAY CO , LTD Methods of forming active matrix display devices with reduced susceptibility to image-sticking and devices formed thereby
5917567, May 22 1997 LG DISPLAY CO , LTD Method of manufacturing a reflector comprising steps forming beads and polymer layer separately
5940154, Nov 05 1996 NLT TECHNOLOGIES, LTD Reflection type liquid crystal display and method of fabricating the same
5942767, Nov 21 1995 SAMSUNG DISPLAY CO , LTD Thin film transistors including silicide layer and multilayer conductive electrodes
5943559, Jun 23 1997 Gold Charm Limited Method for manufacturing liquid crystal display apparatus with drain/source silicide electrodes made by sputtering process
5953093, Jul 17 1993 Sharp Kabushiki Kaisha Liquid crystal display having two or more spacings between electrodes
5959599, Nov 07 1995 Semiconductor Energy Laboratory Co., Ltd. Active matrix type liquid-crystal display unit and method of driving the same
5966189, Feb 17 1994 Seiko Epson Corporation Active matrix substrate and color liquid crystal display
5968850, Oct 11 1996 SAMSUNG DISPLAY CO , LTD Wiring using chromium nitride and methods of fabrication therefor, liquid crystal display panels using the same wiring and methods of fabrication therefor
5977562, Nov 14 1995 SEMICONDUCTOR ENERGY LABORATORY CO , LTD Electro-optical device
5986724, Mar 01 1996 Kabushiki Kaisha Toshiba Liquid crystal display with liquid crystal layer and ferroelectric layer connected to drain of TFT
5990998, Jun 07 1996 LG DISPLAY CO , LTD Active matrix liquid crystal display and related method
5994721, Apr 12 1996 LG DISPLAY CO , LTD High aperture LCD with insulating color filters overlapping bus lines on active substrate
5995190, Mar 11 1996 Sharp Kabushiki Kaisha Axisymmetrically oriented liquid crystal display device with concave portion defined by the second derivative
5998229, Jan 30 1998 SAMSUNG DISPLAY CO , LTD Methods of manufacturing thin film transistors and liquid crystal displays by plasma treatment of undoped amorphous silicon
5998230, Oct 22 1998 LG DISPLAY CO , LTD Method for making liquid crystal display device with reduced mask steps
6008065, Nov 21 1995 TCL CHINA STAR OPTOELECTRONICS TECHNOLOGY CO , LTD Method for manufacturing a liquid crystal display
6008869, Dec 14 1994 Kabushiki Kaisha Toshiba Display device substrate and method of manufacturing the same
6020598, Nov 08 1996 SEMICONDUCTOR ENERGY LABORATORY CO , LTD Liquid crystal display device including crossing gate wiring
6025216, Aug 29 1995 LG DISPLAY CO , LTD TET-LCD method for manufacturing the same
6025891, Nov 29 1996 LG DISPLAY CO , LTD Liquid crystal display device
6025892, Apr 22 1996 Sharp Kabushiki Kaisha Active matrix substrate with removal of portion of insulating film overlapping source line and pixel electrode and method for producing the same
6037017, Apr 26 1994 JAPAN DISPLAY CENTRAL INC Method for formation of multilayer film
6038003, Jun 11 1997 LG DISPLAY CO , LTD Liquid crystal display and method of manufacturing the same
6054975, Aug 01 1996 PANASONIC LIQUID CRYSTAL DISPLAY CO , LTD Liquid crystal display device having tape carrier packages
6055028, Feb 14 1996 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal electro-optical device
6061112, Nov 05 1996 NLT TECHNOLOGIES, LTD Method of fabricating a reflection type liquid crystal display in which the surface of a substrate is roughened, a metal film is formed on the roughened surface, and a non-polarizing, transparent dielectric film is form on the metal film
6064358, Aug 08 1990 Hitachi, Ltd.; Hitachi Haramachi Semi-Conductor, Ltd. Liquid crystal display device and driving method therefor
6064456, Jun 17 1997 Sharp Kabushiki Kaisha Process for manufacturing reflection-type liquid crystal display apparatus
6067141, Dec 26 1997 Sharp Kabushiki Kaisha; Sony Corporation Liquid crystal display device with reduced viewing angle dependency
6072556, Oct 06 1997 SEMICONDUCTOR ENERGY LABORATORY CO , LTD Liquid crystal display with an adjustment layer to even out height difference in the sealant region
6072557, Jul 31 1998 Sharp Kabushiki Kaisha Color liquid crystal display apparatus and method for producing the same
6075257, Dec 23 1996 SAMSUNG DISPLAY CO , LTD Thin film transistor substrate for a liquid crystal display having a silicide prevention insulating layer in the electrode structure
6097458, Dec 11 1995 Sharp Kabushiki Kaisha Reflector, reflective liquid crystal display incorporating the same and method for fabricating the same
6097459, Oct 03 1994 Sharp Kabushiki Kaisha Method for producing a reflection type liquid crystal display
6097465, Mar 01 1996 Semiconductor Energy Laboratory Co., Ltd. In plane switching LCD with 3 electrode on bottom substrate and 1 on top substrate
6114184, Dec 30 1993 NLT TECHNOLOGIES, LTD Method for manufacturing LCD device capable of avoiding short circuit between signal line and pixel electrode
6118502, Mar 16 1995 Semiconductor Energy Laboratory Co., Ltd. Using a temporary substrate to attach components to a display substrate when fabricating a passive type display device
6124155, Jun 19 1991 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and thin film transistor and method for forming the same
6124604, Dec 30 1996 SEMICONDUCTOR ENERGY LABORATORY CO , LTD Liquid crystal display device provided with auxiliary circuitry for reducing electrical resistance
6124606, Apr 12 1996 LG DISPLAY CO , LTD Method of making a large area imager with improved signal-to-noise ratio
6130443, Oct 13 1997 SAMSUNG DISPLAY CO , LTD Liquid crystal display having wires made of molybdenum-tungsten alloy and a method of manufacturing the same
6130729, Aug 30 1996 LG DISPLAY CO , LTD Method of making an AMLCD where the etch stopper is formed without first preparing a pattern mask
6133977, Oct 21 1997 SAMSUNG ELECTRONICS CO , LTD Liquid crystal displays having common electrode overlap with one or more data lines
6140158, Jun 30 1998 BOE-HYDIS TECHNOLOGY CO , LTD Method of manufacturing thin film transistor-liquid crystal display
6141077, Jul 27 1993 Sharp Kabushiki Kaisha Liquid crystal display including pixel electrode(s) designed to improve viewing characteristics
6153893, Nov 05 1993 Sony Corporation Thin film semiconductor device for display
6160600, Nov 17 1995 SEMICONDUCTOR ENERGY LABORATORY CO , LTD Interlayer insulation of TFT LCD device having of silicon oxide and silicon nitride
6166396, Jul 27 1995 Semiconductor Energy Laboratory Co., Ltd. Semiconductor devices
6166399, Jun 19 1991 Semiconductor Energy Laboratory Co., Ltd. Active matrix device including thin film transistors
6172728, Feb 07 1997 Sharp Kabushiki Kaisha Reflective LCD including address lines shaped to reduce parasitic capacitance
6177968, Sep 01 1997 Canon Kabushiki Kaisha Optical modulation device with pixels each having series connected electrode structure
6184946, Nov 27 1996 Hitachi, Ltd. Active matrix liquid crystal display
6188452, Jul 09 1996 LG DISPLAY CO , LTD Active matrix liquid crystal display and method of manufacturing same
6190933, Jun 30 1993 The United States of America as represented by the Secretary of the Navy Ultra-high resolution liquid crystal display on silicon-on-sapphire
6197625, Dec 29 1997 LG DISPLAY CO , LTD Method of fabricating a thin film transistor
6198133, Dec 03 1993 Semiconductor Energy Laboratory Company, Ltd. Electro-optical device having silicon nitride interlayer insulating film
6208390, Nov 24 1994 Kabushiki Kaisha Toshiba Electrode substrate resistant to wire breakage for an active matrix display device
6208395, Aug 16 1995 NLT TECHNOLOGIES, LTD Reflective liquid crystal display and method for fabricating the same
6215541, Nov 20 1997 SAMSUNG ELECTRONICS CO , LTD Liquid crystal displays and manufacturing methods thereof
6218219, Sep 29 1997 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and fabrication method thereof
6218221, May 27 1999 Innolux Corporation Thin film transistor with a multi-metal structure and a method of manufacturing the same
6222603, Jan 13 1998 TOSHIBA MATSUSHITA DISPLAY TECHNOLOGY CO , LTD Method of manufacturing liquid crystal display device with a double seal
6235561, Aug 23 1995 Kabushiki Kaisha Toshiba Method of manufacturing thin-film transistors
6239854, Oct 01 1998 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device with an adjustment layer not connected to driving circuit to even out height difference in the sealant region
6243064, Nov 07 1995 Semiconductor Energy Laboratory Co., Ltd. Active matrix type liquid-crystal display unit and method of driving the same
6255668, Jun 05 1998 MAGNACHIP SEMICONDUCTOR LTD Thin film transistor with inclined eletrode side surfaces
6265889, Sep 30 1997 Kabushiki Kaisha Toshiba Semiconductor test circuit and a method for testing a semiconductor liquid crystal display circuit
6266117, Sep 14 1995 PANASONIC LIQUID CRYSTAL DISPLAY CO , LTD Active-matrix liquid crystal display
6266121, Nov 28 1996 Sharp Kabushiki Kaisha; SECRETARY OF STATE FOR DEFENCE IN HER BRITANNIC MAJESTY S GOVERNMENT OF THE UNITED KINGDOM OF GREAT BRITAIN AND NORTHERN IRELAND Liquid crystal display element and method of manufacturing same
6266122, Jun 30 1998 Sharp Kabushiki Kaisha; Sony Corporation Liquid crystal display device and method for manufacturing the same
6268617, Nov 14 1995 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
6271903, Jan 23 1997 LG DISPLAY CO , LTD Liquid crystal display device having a light shielding matrix
6287899, Dec 31 1998 SAMSUNG DISPLAY CO , LTD Thin film transistor array panels for a liquid crystal display and a method for manufacturing the same
6297519, Aug 28 1998 Sharp Kabushiki Kaisha TFT substrate with low contact resistance and damage resistant terminals
6300926, Apr 27 1998 PANASONIC LIQUID CRYSTAL DISPLAY CO , LTD Active matrix type liquid crystal display
6304243, Oct 12 1992 Seiko Instruments Inc Light valve device
6317185, May 29 1998 PANASONIC LIQUID CRYSTAL DISPLAY CO , LTD Liquid crystal display apparatus
6317187, Dec 25 1998 Sony Corporation Liquid crystal light valve apparatus in which the spacers having protrusion and recess
6323051, Mar 10 1999 Sharp Kabushiki Kaisha Method of manufacturing liquid crystal display
6330049, Mar 25 1998 Sharp Kabushiki Kaisha Liquid crystal display device, and method for producing the same
6331845, Aug 08 1990 Hitachi, LTD; Hitachi Haramachi Semi-conductor, LTD Liquid crystal display device and driving method therefor
6331881, May 09 1997 MINOLTA CO , LTD Liquid crystal device with composite layer of cured resin pillars and liquid crystal phase and method of producing the same
6335213, Jun 19 1991 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and thin film transistor and method for forming the same
6335778, Aug 28 1996 Sharp Kabushiki Kaisha Active matrix type liquid crystal display device using driver circuits which latch-in data during horizontal blanking period
6339462, Jun 30 1998 Sharp Kabushiki Kaisha; Sony Corporation LCD having polymer wall and column-like projection defining cell gap
6341002, Oct 15 1998 Sharp Kabushiki Kaisha Liquid crystal display device
6342939, Jul 27 1993 Sharp Kabushiki Kaisha Liquid crystal display including pixel electrode (S) designed to improve viewing characteristics
6344888, Oct 22 1996 Seiko Epson Corporation Liquid crystal panel substrate liquid crystal panel and electronic device and projection display device using the same
6359672, Oct 20 1997 Innolux Corporation Method of making an LCD or X-ray imaging device with first and second insulating layers
6362866, Nov 28 1997 SEMICONDUCTOR ENERGY LABORATORY CO , LTD Liquid crystal electrooptical device
6365933, Oct 15 1996 SEMICONDUCTOR ENERGY LABORATORY CO , LTD Semiconductor device and method of manufacturing the same
6368485, Nov 18 1997 Mitsubishi Chemical Corporation Forming electrolyte for forming metal oxide coating film
6384818, Sep 27 1996 SEMICONDUCTOR ENERGY LABORATORY CO , LTD Electrooptical device and method of fabricating the same
6387737, Mar 08 2000 SEMICONDUCTOR ENERGY LABORATORY CO , LTD Semiconductor device and manufacturing method thereof
6407431, Sep 29 1997 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and fabrication method thereof
6407784, Mar 11 1998 NLT TECHNOLOGIES, LTD Reflection type liquid crystal display and method of fabricating the same
6411358, Nov 20 1997 SAMSUNG ELECTRONICS CO , LTD Liquid crystal display devices
6429057, Jan 10 1998 SAMSUNG ELECTRONICS CO , LTD Method for manufacturing thin film transistor array panel for liquid crystal display
6433842, Mar 26 1999 PANASONIC LIQUID CRYSTAL DISPLAY CO , LTD Liquid crystal display device and method of manufacturing the same
6437844, Sep 04 1996 TOSHIBA MATSUSHITA DISPLAY TECHNOLOGY CO , LTD Liquid crystal display device and associated fabrication method
6441399, Apr 22 1994 Semiconductor Energy Laboratory Co., Ltd. Semiconductor integrated system
6456269, Nov 07 1995 Semiconductor Energy Laboratory Co., Ltd. Active matrix type liquid-crystal display unit and method of driving the same
6462802, Jan 19 1998 PANASONIC LIQUID CRYSTAL DISPLAY CO , LTD Liquid crystal display device having wiring layer made of nitride of Nb or nitride alloy containing Nb as a main component
6465268, May 22 1997 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing an electro-optical device
6466289, Oct 21 1997 SAMSUNG ELECTRONICS CO , LTD Liquid crystal displays having common electrode overlap with one or more data lines
6493050, Oct 26 1999 InfoVision Optoelectronics Holdings Limited; SHIN KOH DEN TECHNOLOGY LIMITED Wide viewing angle liquid crystal with ridge/slit pretilt, post spacer and dam structures and method for fabricating same
6498634, Dec 20 1995 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal electro-optic device
6519018, Nov 03 1998 International Business Machines Corporation Vertically aligned liquid crystal displays and methods for their production
6528357, Mar 13 1998 Kabushiki Kaisha Toshiba Method of manufacturing array substrate
6529256, May 19 1997 LG DISPLAY CO , LTD In-plane switching mode liquid crystal display device
6531392, Dec 12 1998 SAMSUNG DISPLAY CO , LTD Method of forming a thin film transistor array panel using photolithography techniques
6567146, Oct 06 1997 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device having external connecting wirings and auxiliary wirings
6573564, Sep 29 1997 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and fabrication method thereof
6583065, Aug 03 1999 Applied Materials, Inc Sidewall polymer forming gas additives for etching processes
6587162, Dec 11 1998 PANASONIC LIQUID CRYSTAL DISPLAY CO , LTD Liquid crystal display
6599791, Apr 22 1994 Semiconductor Energy Laboratory Co., Ltd. Semiconductor integrated circuit
6611309, Dec 31 1998 SAMSUNG DISPLAY CO , LTD Thin film transistor array panels for a liquid crystal display and a method for manufacturing the same
6617644, Nov 09 1998 SEMICONDUCTOR ENERGY LABORATORY CO , LTD Semiconductor device and method of manufacturing the same
6617648, Feb 25 1998 SEMICONDUCTOR ENERGY LABORATORY CO , LTD Projection TV
6621102, Nov 04 1995 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
6624864, Apr 17 1998 TOSHIBA MOBILE DISPLAY CO , LTD Liquid crystal display device, matrix array substrate, and method for manufacturing matrix array substrate
6630977, May 20 1999 SEMICONDUCTOR ENERGY LABORATORY CO , LTD Semiconductor device with capacitor formed around contact hole
6642074, Oct 01 1998 SAMSUNG ELECTRONICS CO , LTD Method for manufacturing thin film transistor array panel for LCD having a quadruple layer by a second photolithography process
6661488, Jun 12 1997 Sharp Kabushiki Kaisha Vertically-alligned (VA) liquid crystal display device
6671025, Feb 15 1999 Sharp Kabushiki Kaisha Liquid crystal display device and method of manufacturing the same without scattering spacers
6697129, Feb 14 1996 Semiconductor Energy Laboratory Co., Ltd. Guest-host mode liquid crystal display device of lateral electric field driving type
6709901, Mar 13 2000 SEMICONDUCTOR ENERGY LABORATORY CO , LTD Semiconductor device having stick drivers and a method of manufacturing the same
6743650, May 22 1997 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing an electro-optical device
6747288, Mar 08 2000 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
6756258, Jun 19 1991 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
6762082, Mar 06 2000 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
6762813, Nov 22 1996 SEMICONDUCTOR ENERGY LABORATORY CO , LTD Electro-optical device and method of manufacturing the same
6771342, Mar 05 1996 SEMICONDUCTOR ENERGY LABORATORY CO , LTD Liquid crystal display device and display device
6774974, Aug 28 1998 Gold Charm Limited Liquid crystal display device
6787809, Oct 01 1998 SAMSUNG ELECTRONICS CO , LTD Thin film transistor array panel
6797548, Jun 19 1991 SEMICONDUCTOR ENERGY LABORATORY CO., INC. Electro-optical device and thin film transistor and method for forming the same
6806495, Mar 06 2000 SEMICONDUCTOR ENERGY LABORATORY CO , LTD Semiconductor device and method of fabricating the same
6806499, Mar 13 2000 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and a method of manufacturing the same
6806937, Dec 31 1998 SAMSUNG DISPLAY CO , LTD Thin film transistor array panel
6847064, Jun 19 1991 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a thin film transistor
6855957, Mar 13 2000 SEMICONDUCTOR ENERGY LABORATORY CO , LTD Semiconductor device and manufacturing method thereof
6856360, Nov 28 1997 Semiconductor Energy Laboratory Co., Ltd. Electrooptical device, method of manufacturing the same, and electronic equipment
6856372, Nov 20 1997 SAMSUNG ELECTRONICS CO , LTD Liquid crystal display (LCD) devices having redundant patterns
6861670, Apr 01 1999 SEMICONDUCTOR ENERGY LABORATORY CO , LTD Semiconductor device having multi-layer wiring
6873312, Jan 17 1997 BOE TECHNOLOGY GROUP CO , LTD Liquid crystal display apparatus, driving method therefor, and display system
6900084, May 09 2000 SEMICONDUCTOR ENERGY LABORATORY CO , LTD Semiconductor device having a display device
6911962, Mar 26 1996 Semiconductor Energy Laboratory Co., Ltd. Driving method of active matrix display device
6914655, Dec 20 1995 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal electro-optic device
6950168, May 20 1999 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with capacitor formed around contact hole
7016003, Mar 05 1996 Semiconductor Energy Laboratory Co., Ltd. In-plane switching liquid crystal display device including common electrode comprising black matrix
7019329, Mar 08 2000 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
7071037, Mar 06 2001 STARVOX COMMUNICATIONS, INC Semiconductor device and manufacturing method thereof
7078255, Oct 01 1998 SAMSUNG ELECTRONICS CO , LTD Thin film transistor array panel for a liquid crystal display and a method for manufacturing the same
7102165, May 09 2000 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
7102718, Mar 16 2000 SEMICONDUCTOR ENERGY LABORATORY CO , LTD Liquid crystal display device with particular TFT structure and method of manufacturing the same
7145173, Apr 22 1994 Semiconductor Energy Laboratory Co., Ltd. Semiconductor integrated circuit
7166862, Apr 22 1994 Semiconductor Energy Laboratory Co., Ltd. Semiconductor integrated circuit
7202497, Nov 27 1997 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
7235810, Dec 03 1998 SEMICONDUCTOR ENERGY LABORATORY CO , LTD Semiconductor device and method of fabricating the same
7259427, Nov 09 1998 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
7279711, Nov 09 1998 SEMICONDUCTOR ENERGY LABORATORY CO , LTD Ferroelectric liquid crystal and goggle type display devices
7317438, Oct 30 1998 SEMICONDUCTOR ENERGY LABORATORY CO , LTD Field sequential liquid crystal display device and driving method thereof, and head mounted display
7323715, May 09 2000 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
7403238, Nov 28 1997 Semiconductor Energy Laboratory Co., Ltd. Electrooptical device, method of manufacturing the same, and electronic equipment
7414266, Mar 08 2000 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
7507991, Jun 19 1991 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and thin film transistor and method for forming the same
7511776, Feb 14 1996 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal electro-optical device and method of driving the same
7652294, Mar 08 2000 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
7656491, Mar 16 2000 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and method of manufacturing the same
7687325, Mar 13 2000 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
7705354, Mar 06 2000 Semiconductor Energy Laboratory Co., Ltd Semiconductor device and method for fabricating the same
7714975, Mar 17 2000 SEMICONDUCTOR ENERGY LABORATORY CO , LTD Liquid crystal display device and manfacturing method thereof
7728334, Mar 08 2000 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
20040207789,
20040218112,
20040257511,
20050082536,
20050098894,
20060081931,
20060228821,
20070146568,
20100120180,
20100171895,
20100195013,
EP557110,
EP629003,
EP678907,
EP1001467,
EP1006589,
EP1041622,
JP10048651,
JP10048663,
JP10123574,
JP10170959,
JP11024063,
JP11109372,
JP11133455,
JP11160732,
JP11160734,
JP11202368,
JP11258596,
JP11258625,
JP11264998,
JP11337961,
JP11337978,
JP11352322,
JP1210989,
JP2000002886,
JP2000075302,
JP2000111901,
JP2000341242,
JP2001085698,
JP2001250953,
JP2001255560,
JP2001257359,
JP2001264804,
JP2001264807,
JP2001318626,
JP5034717,
JP5119331,
JP5142558,
JP5175500,
JP5265020,
JP5323371,
JP6027481,
JP6082754,
JP6148683,
JP6194615,
JP62131578,
JP6250210,
JP63082405,
JP7013196,
JP7014880,
JP7159776,
JP7191348,
JP7318975,
JP8064828,
JP8087030,
JP8087033,
JP9005767,
JP9015621,
JP9054318,
JP9073101,
JP9074257,
JP9152626,
JP9153618,
JP9160071,
JP9274444,
KR139346,
KR100510439,
KR161466,
KR19960000262,
KR1997024311,
KR1998042096,
KR1998072232,
KR19990075407,
KR19990077792,
KR1999011210,
KR1999063319,
KR1999074563,
KR2000033515,
/
Executed onAssignorAssigneeConveyanceFrameReelDoc
Mar 01 2011Semiconductor Energy Laboratory Co., Ltd.(assignment on the face of the patent)
Date Maintenance Fee Events


Date Maintenance Schedule
Apr 09 20164 years fee payment window open
Oct 09 20166 months grace period start (w surcharge)
Apr 09 2017patent expiry (for year 4)
Apr 09 20192 years to revive unintentionally abandoned end. (for year 4)
Apr 09 20208 years fee payment window open
Oct 09 20206 months grace period start (w surcharge)
Apr 09 2021patent expiry (for year 8)
Apr 09 20232 years to revive unintentionally abandoned end. (for year 8)
Apr 09 202412 years fee payment window open
Oct 09 20246 months grace period start (w surcharge)
Apr 09 2025patent expiry (for year 12)
Apr 09 20272 years to revive unintentionally abandoned end. (for year 12)