A manufacturing method of a package carrier is provided. A first opening communicating an upper surface and a lower surface of a substrate is formed. A heat-conducting element having a top surface and a bottom surface is configured in the first opening and fixed into the first opening via an insulation material. A first insulation layer and a first metal layer are laminated onto the upper surface. A second insulation layer and a second metal layer are laminated onto the lower surface. A second opening and a third opening respectively exposing portions of the top and the bottom surfaces are formed. At least one through via passing through the first metal layer, the first insulation layer, the substrate, the second insulation layer and the second metal layer is formed. A third metal layer covering the first and second metal layers and an inner wall of the through via is formed.
|
1. A package carrier suitable for carrying a heat-generating element, the package carrier comprising:
a substrate having an upper surface, a lower surface opposite to the upper surface, and a first opening communicating the upper surface and the lower surface;
a heat-conducting element configured in the first opening of the substrate and having a top surface and a bottom surface opposite to the top surface;
an insulation material filling the first opening of the substrate to fix the heat-conducting element into the first opening of the substrate;
a first insulation layer configured on the upper surface of the substrate and covering the upper surface and a portion of the insulation material, the first insulation layer having a second opening, the second opening exposing a portion of the top surface of the heat-conducting element;
a second insulation layer configured on the lower surface of the substrate and covering the lower surface and a portion of the insulation material, the second insulation layer having a third opening, the third opening exposing a portion of the bottom surface of the heat-conducting element;
a first metal layer configured on the first insulation layer;
a second metal layer configured on the second insulation layer;
at least one through via passing through the first metal layer, the first insulation layer, the substrate, the second insulation layer, and the second metal layer;
a third metal layer covering the first metal layer, the first insulation layer and the portion of the top surface of the heat-conducting element exposed by the second opening, the second metal layer, the second insulation layer and the portion of the bottom surface of the heat-conducting element exposed by the third opening, and an inner wall of the at least one through via;
a solder mask configured on the third metal layer; and
a surface passivation layer covering both the third metal layer exposed by the solder mask and the third metal layer located on the inner wall of the at least one through via, the heat-generating element being configured on the surface passivation layer correspondingly located above the portion of the top surface of the heat-conducting element exposed by the second opening.
2. The package carrier as claimed in
3. The package carrier as claimed in
4. The package carrier as claimed in
5. The package carrier as claimed in
6. The package carrier as claimed in
|
This application claims the priority benefit of Taiwan application serial no. 100104109, filed Feb. 8, 2011. The entirety of the above-mentioned patent application is hereby incorporated by reference herein and made a part of this specification.
1. Field of the Invention
The invention relates to a semiconductor structure and a manufacturing method thereof. More particularly, the invention relates to a package carrier and a manufacturing method thereof.
2. Description of Related Art
The chip package aims at protecting an exposed chip, lower the density of chip contacts, and effectively dissipate heat generated by the chip. A leadframe often serves as a carrier of the chip when a conventional wire bonding technique is applied. As contact density in the chip gradually increases, the leadframe is no longer able to further improve the contact density and thus can be replaced by a package substrate which can achieve favorable contact density. Besides, the chip is packaged onto the package substrate by conductive media, such as metal conductive wires or bumps.
In the most common light emitting diode (LED) package structure, an LED chip need be packaged before the LED chip is used, and the LED chip generates a significant amount of heat when emitting light. Given the heat generated by the LED chip cannot be well dissipated and continues to accumulate in the LED package structure, the temperature of the LED package structure continuously increases. As such, the overly heated LED chip may have luminance decay, shortened life span, or even permanent damages.
As the integrity of integrated circuits continues to increase, the mismatch of the coefficient of thermal expansion between the LED chip and the package substrate often leads to increasing thermal stress and warpage therebetween. Ultimately, the reliability of the connection between the LED chip and the package substrate declines. In addition to enhancement of the light extraction efficiency, the current package technology focuses on decreasing the thermal stress of the package structure to increase the lifetime and the reliability of the package structure.
The invention is directed to a package carrier suitable for carrying a heat-generating element.
The invention is further directed to a manufacturing method of a package carrier. By applying the manufacturing method, the aforesaid package carrier can be formed.
In an embodiment of the invention, a manufacturing method of a package carrier includes following steps. A substrate is provided. The substrate has an upper surface and a lower surface opposite to the upper surface. A first opening communicating the upper surface and the lower surface of the substrate is formed. A heat-conducting element is configured in the first opening of the substrate. The heat-conducting element is fixed into the first opening of the substrate via an insulation material, and the heat-conducting element has a top surface and a bottom surface opposite to the top surface. A first insulation layer and a first metal layer located on the first insulation layer are laminated onto the upper surface of the substrate, and a second insulation layer and a second metal layer located on the second insulation layer are laminated onto the lower surface of the substrate. The first insulation layer is located between the substrate and the first metal layer and covers the top surface of the heat-conducting element and a portion of the insulation material. The second insulation layer is located between the substrate and the second metal layer and covers the bottom surface of the heat-conducting element and a portion of the insulation material. A second opening and a third opening are formed. The second opening passes through the first metal layer and the first insulation layer and exposes a portion of the top surface. The third opening passes through the second metal layer and the second insulation layer and exposes a portion of the bottom surface. At least one through via passing through the first metal layer, the first insulation layer, the substrate, the second insulation layer, and the second metal layer is formed. A third metal layer is formed. The third metal layer covers the first metal layer, a portion of the first insulation layer and the portion of the top surface exposed by the second opening, the second metal layer, a portion of the second insulation layer and the portion of the bottom surface exposed by the third opening, and an inner wall of the through via. A solder mask is formed on the third metal layer. A surface passivation layer is formed. The surface passivation layer covers both the third metal layer that is exposed by the solder mask and the third metal layer that is located on the inner wall of the through via.
In an embodiment of the invention, a package carrier suitable for carrying a heat-generating element is provided. The package carrier includes a substrate, a heat-conducting element, an insulation material, a first insulation layer, a second insulation layer, a first metal layer, a second metal layer, at least one through via, a third metal layer, a solder mask, and a surface passivation layer. The substrate has an upper surface, a lower surface opposite to the upper surface, and a first opening communicating the upper surface and the lower surface. The heat-conducting element is configured in the first opening of the substrate and has a top surface and a bottom surface opposite to the top surface. The insulation material fills the first opening of the substrate to fix the heat-conducting element into the first opening of the substrate. The first insulation layer is configured on the upper surface of the substrate and covers the upper surface and a portion of the insulation material. Here, the first insulation layer has a second opening, and the second opening exposes a portion of the top surface of the heat-conducting element. The second insulation layer is configured on the lower surface of the substrate and covers the lower surface and a portion of the insulation material. Here, the second insulation layer has a third opening, and the third opening exposes a portion of the bottom surface of the heat-conducting element. The first metal layer is configured on the first insulation layer. The second metal layer is configured on the second insulation layer. The through via passes through the first metal layer, the first insulation layer, the substrate, the second insulation layer, and the second metal layer. The third metal layer covers the first metal layer, the first insulation layer and the portion of the top surface of the heat-conducting element exposed by the second opening, the second metal layer, the second insulation layer and the portion of the bottom surface of the heat-conducting element exposed by the third opening, and an inner wall of the through via. The solder mask is configured on the third metal layer. The surface passivation layer covers both the third metal layer that is exposed by the solder mask and the third metal layer that is located on the inner wall of the through via. The heat-generating element is configured on the surface passivation layer that is correspondingly located above the portion of the top surface of the heat-conducting element exposed by the second opening.
Based on the above, the package carrier described in the above embodiments has the heat-conducting element that is embedded in the substrate. Hence, when a heat-generating element is configured on the package carrier, the heat generated by the heat-generating element can be rapidly transmitted to the external surroundings through the heat-conducting element and the metal layers located on the substrate. As such, the package carrier described in the embodiments of the invention can effectively dissipate the heat generated by the heat-generating element, and the efficiency and the life span of the heat-generating element can both be improved. In addition, the package carrier described in the above embodiments of the invention has the conductive layers and the insulation layers that are laminated onto the substrate, which not only can enhance the structural strength of the entire package carrier but also can improve heat-conducting effects of the package carrier. To sum up, the package carrier described in the embodiments of the invention is characterized by favorable heat-conducting capacity and strong structural strength.
In order to make the aforementioned and other features and advantages of the invention more comprehensible, embodiments accompanying figures are described in detail below.
The accompanying drawings constituting a part of this specification are incorporated herein to provide a further understanding of the invention. Here, the drawings illustrate embodiments of the invention and, together with the description, serve to explain the principles of the invention.
With reference to
As indicated in
With reference to
In particular, according to this embodiment, the heat-conducting element 120 includes a first conductive layer 122, a second conductive layer 124, and an insulation material layer 126 located between the first conductive layer 122 and the second conductive layer 124. A coefficient of thermal expansion of the heat-conducting element 120 is smaller than a coefficient of thermal expansion of the substrate 110a, and a coefficient of thermal conductivity of the heat-conducting element 120 is greater than a coefficient of thermal conductivity of the substrate 110a. Specifically, the coefficient of thermal expansion of the heat-conducting element 120 ranges from 3 ppm/° C. to 30 ppm/° C., for instance, and the coefficient of thermal conductivity of the heat-conducting element 120 ranges from 20 W/m*K to 500 W/m*K. The coefficient of thermal conductivity of the insulation material layer 126 of the heat-conducting element 120 is greater than the coefficient of thermal conductivity of the core dielectric layer 116a of the substrate 110a. In addition, a material of the heat-conducting element 120 is, for instance, ceramics with or without the through silicon via (TSV), silicon with or without the TSV, silicon carbide, diamond, or metal.
With reference to
With reference to
With reference to
As shown in
With reference to
In terms of the structure of the package carrier 100a, as shown in
Specifically, the heat-generating element 200, e.g., a semiconductor chip, can be electrically connected to the surface passivation layer 180 by wire bonding through a plurality of bonding wires 220. Alternatively, the heat-generating element 200, the bonding wires 220, and a portion of the package carrier 100a can be encapsulated by a molding compound 210, so as to secure the electrical connection among the heat-generating element 200, the bonding wires 220, and the package carrier 100a. Since the coefficient of thermal expansion of the heat-conducting element 120 of this embodiment is smaller than the coefficient of thermal expansion of the substrate 110a, the difference in the coefficient of thermal expansion of the heat-generating element 200, the coefficient of thermal expansion of the heat-conducting element 120, and the coefficient of thermal expansion of the substrate 110a can gradually decrease. As such, the difference in the coefficient of thermal expansion is not significant enough to increase the stress among the heat-generating element 200, the heat-conducting element 120, and the substrate 110a. Thereby, the heat-generating element 200 is not peeled off or damaged, and the reliability of the package carrier 100a can be improved.
In addition, the coefficient of thermal conductivity of the heat-conducting element 120 is greater than the coefficient of thermal conductivity of the substrate 110a, and the heat-conducting element 120 is embedded in the substrate 110a. The first metal layer 152 and the second metal layer 154 are respectively configured above the top surface 121 and the bottom surface 123 of the heat-conducting element 120. Therefore, when the het-generating element 200 is configured on the package carrier 100a, the heat generated by the heat-generating element 200 can be rapidly transmitted to the external surroundings through the heat-conducting element 120 and the metal layers (including the first, second, and third metal layers 152, 154, and 160) located on the substrate 110a. As such, the package carrier 100a described in the embodiments of the invention can effectively dissipate the heat generated by the heat-generating element 200, and the efficiency and the life span of the heat-generating element 200 can both be improved. Moreover, the insulation layers (i.e., the first and second insulation layers 142 and 144) and the metal layers (i.e., the first and second metal layers 152 and 154) that can enhance the structural strength are configured on the substrate 110a. Hence, the package carrier 100a of this embodiment can have favorable structural strength when the package carrier 100a holds the heat-generating element 200.
Note that the way to bond the heat-generating element 200 and the package carrier 100a and the type of the heat-generating element 200 are not limited in the invention. Although the heat-generating element 200 described in this embodiment is electrically connected to the surface passivation layer 180 of the package carrier 100a by wire bonding through a plurality of bonding wires, the heat-generating element 200 in another embodiment can also be electrically connected to the surface passivation layer 180 located above the heat-conducting element 120 by flip-chip bonding through a plurality of bumps (not shown). In another embodiment of the invention, the heat-generating element 200 can be a chip package (not shown) and is installed to the package carrier 100a by conducting a surface mount technology (SMT). The way to bond the heat-generating element 200 and the package carrier 100a and the type of the heat-generating element 200 are exemplary and should not be construed as limitations to the invention.
With reference to
With reference to
In particular, according to this embodiment, the heat-conducting element 120 includes a first conductive layer 122, a second conductive layer 124, and an insulation material layer 126 located between the first conductive layer 122 and the second conductive layer 124. The coefficient of thermal expansion of the heat-conducting element 120 is smaller than the coefficient of thermal expansion of the substrate 110b, and the coefficient of thermal conductivity of the heat-conducting element 120 is greater than the coefficient of thermal conductivity of the substrate 110b. Specifically, the coefficient of thermal expansion of the heat-conducting element 120 ranges from 3 ppm/° C. to 30 ppm/° C., for instance, and the coefficient of thermal conductivity of the heat-conducting element 120 ranges from 20 W/m*K to 500 W/m*K. In addition, a material of the heat-conducting element 120 is, for instance, ceramics with or without the TSV, silicon with or without the TSV, silicon carbide, diamond, or metal.
With reference to
With reference to
With reference to
As shown in
With reference to
In terms of the structure of the package carrier 100b, as shown in
Specifically, the heat-generating element 200, e.g., a semiconductor chip, can be electrically connected to the surface passivation layer 160 by wire bonding through a plurality of bonding wires 220. Alternatively, the heat-generating element 200, the bonding wires 220, and a portion of the package carrier 100b can be encapsulated by a molding compound 210, so as to secure the electrical connection among the heat-generating element 200, the bonding wires 220, and the package carrier 100b. Since the coefficient of thermal expansion of the heat-conducting element 120 of this embodiment is smaller than the coefficient of thermal expansion of the substrate 110b, the difference in the coefficient of thermal expansion of the heat-generating element 200, the coefficient of thermal expansion of the heat-conducting element 120, and the coefficient of thermal expansion of the substrate 110b can gradually decrease. As such, the difference in the coefficient of thermal expansion is not significant enough to increase the stress among the heat-generating element 200, the heat-conducting element 120, and the substrate 110b. Thereby, the heat-generating element 200 is not peeled off or damaged, and the reliability of the package carrier 100b can be improved.
In addition, the coefficient of thermal conductivity of the heat-conducting element 120 is greater than the coefficient of thermal conductivity of the substrate 110b, and the heat-conducting element 120 is embedded in the substrate 110b. The first metal layer 152 and the second metal layer 154 are respectively configured above the top surface 121 and the bottom surface 123 of the heat-conducting element 120. Therefore, when the het-generating element 200 is configured on the package carrier 100b, the heat generated by the heat-generating element 200 can be rapidly transmitted to the external surroundings through the heat-conducting element 120 and the metal layers (including the first, second, and third metal layers 152, 154, and 160) located on the substrate 110b. As such, the package carrier 100b described in the embodiments of the invention can effectively dissipate the heat generated by the heat-generating element 200, and the efficiency and the life span of the heat-generating element 200 can both be improved.
Note that the way to bond the heat-generating element 200 and the package carrier 100b and the type of the heat-generating element 200 are not limited in the invention. Although the heat-generating element 200 described in this embodiment is electrically connected to the surface passivation layer 180 of the package carrier 100b, the heat-generating element 200 in another embodiment can also be electrically connected to the surface passivation layer 180 located above the heat-conducting element 120 by flip-chip bonding through a plurality of bumps (not shown). In another embodiment of the invention, the heat-generating element 200 can be a chip package (not shown) and is installed to the package carrier 100b by conducting a surface mount technology (SMT). The way to bond the heat-generating element 200 and the package carrier 100b and the type of the heat-generating element 200 are exemplary and should not be construed as limitations to the invention.
In light of the foregoing, the package carrier described in the above embodiments has the heat-conducting element that is embedded in the substrate. Hence, when a heat-generating element is configured on the package carrier, the heat generated by the heat-generating element can be rapidly transmitted to the external surroundings through the heat-conducting element and the metal layers located on the substrate. As such, the package carrier described in the embodiments of the invention can effectively dissipate the heat generated by the heat-generating element, and the efficiency and the life span of the heat-generating element can both be improved. In addition, the package carrier described in the above embodiments of the invention has the conductive layers and the insulation layers that are laminated onto the substrate, which not only can enhance the structural strength of the entire package carrier but also can improve heat-conducting effects of the package carrier. Moreover, since the coefficient of thermal expansion of the heat-conducting element of this embodiment is smaller than the coefficient of thermal expansion of the substrate, the difference in the coefficient of thermal expansion of the heat-generating element, the coefficient of thermal expansion of the heat-conducting element, and the coefficient of thermal expansion of the substrate can gradually decrease. As such, the difference in the coefficient of thermal expansion is not significant enough to increase the stress among the heat-generating element, the heat-conducting element, and the substrate. Thereby, the heat-generating element is not peeled off or damaged, and the reliability of the package carrier can be improved.
Although the invention has been described with reference to the above embodiments, it will be apparent to one of the ordinary skill in the art that modifications to the described embodiment may be made without departing from the spirit of the invention. Accordingly, the scope of the invention will be defined by the attached claims not by the above detailed descriptions.
Patent | Priority | Assignee | Title |
10177067, | Oct 25 2016 | Subtron Technology Co., Ltd. | Manufacturing method of package carrier |
11955589, | Feb 14 2018 | EPISTAR CORPORATION | Light-emitting device, manufacturing method thereof and display module using the same |
Patent | Priority | Assignee | Title |
5438478, | Oct 20 1992 | Ibiden Co., Ltd. | Electronic component carriers and method of producing the same as well as electronic devices |
6091137, | May 31 1996 | Kabushiki Kaisha Toshiba | Semiconductor device substrate and method of manufacturing the same |
6465883, | Jul 08 1998 | Infineon Technologies AG | Capsule for at least one high power transistor chip for high frequencies |
6545353, | May 08 2000 | Shinko Electric Industries Co., Ltd. | Multilayer wiring board and semiconductor device |
6861750, | Feb 01 2002 | AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE LIMITED | Ball grid array package with multiple interposers |
6921971, | Jan 15 2003 | Kyocera Corporation | Heat releasing member, package for accommodating semiconductor element and semiconductor device |
8324723, | Mar 25 2008 | Bridge Semiconductor Corporation | Semiconductor chip assembly with bump/base heat spreader and dual-angle cavity in bump |
20010038145, | |||
20020038908, | |||
20030092221, | |||
20030146503, | |||
20040051172, | |||
20040207073, | |||
20050023030, | |||
20080083981, | |||
JP2006108216, | |||
JP5304223, | |||
JP6215881, |
Executed on | Assignor | Assignee | Conveyance | Frame | Reel | Doc |
Mar 25 2011 | SUN, SHIH-HAO | SUBTRON TECHNOLOGY CO LTD | ASSIGNMENT OF ASSIGNORS INTEREST SEE DOCUMENT FOR DETAILS | 026101 | /0703 | |
Apr 08 2011 | Subtron Technology Co., Ltd. | (assignment on the face of the patent) | / |
Date | Maintenance Fee Events |
Nov 03 2016 | M1551: Payment of Maintenance Fee, 4th Year, Large Entity. |
Sep 24 2020 | M1552: Payment of Maintenance Fee, 8th Year, Large Entity. |
Date | Maintenance Schedule |
May 14 2016 | 4 years fee payment window open |
Nov 14 2016 | 6 months grace period start (w surcharge) |
May 14 2017 | patent expiry (for year 4) |
May 14 2019 | 2 years to revive unintentionally abandoned end. (for year 4) |
May 14 2020 | 8 years fee payment window open |
Nov 14 2020 | 6 months grace period start (w surcharge) |
May 14 2021 | patent expiry (for year 8) |
May 14 2023 | 2 years to revive unintentionally abandoned end. (for year 8) |
May 14 2024 | 12 years fee payment window open |
Nov 14 2024 | 6 months grace period start (w surcharge) |
May 14 2025 | patent expiry (for year 12) |
May 14 2027 | 2 years to revive unintentionally abandoned end. (for year 12) |