LDMOS with accumulation enhancement implant

Abstract

A lateral double-diffused metal-oxide-semiconductor (LDMOS) transistor device includes an enhancement implant region formed in a portion of an accumulation region proximate a P-N junction between body and drift drain regions. The enhancement implant region contains additional dopants of the same conductivity type as the drift drain region. There is a gap between the enhancement implant region and the P-N junction. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

Description

FIELD OF THE INVENTION

Embodiments of the present invention relate to high voltage semiconductor devices and the manufacturing process thereof and, in particular, to lateral double-diffused metal-oxide-semiconductor (LDMOS) transistors with accumulation enhancement implant and thick accumulation oxide.

BACKGROUND OF THE INVENTIONS

Lateral double-diffused metal-oxide-semiconductor (LDMOS) transistors are commonly used in high-voltage applications (20 to 500 volts) because of their high breakdown voltage characteristics and compatibility with low voltage CMOS technology. In general, an N-type LDMOS transistor includes a polysilicon gate, an N+ source region formed in a P-type body region, and an N+ drain region. The N+ drain region is separated from the channel formed in the body region under the polysilicon gate by an N drift region. It is well known that by increasing the length of the N-drift region, the breakdown voltage of the LDMOS transistor can be accordingly increased.

FIG. 1 is a cross-sectional diagram showing an existing LDMOS device 100 provided as a high voltage N-channel Lateral DMOS (LDMOS). It is noted that this type of device can be formed in an N-type epitaxial layer, a P-type epitaxial layer or a P-type substrate. The N-channel LDMOS device 100 formed in either an epitaxial layer or a P-type substrate 110 includes a N+ source region 120 disposed in a P-well body region 112 and a N+ drain contact pickup region 122 disposed in N-drift drain region 114. A P+ body pickup region 124 is also formed on a top portion of the P-well body region 112 laterally adjacent to the source region 120. A field oxide (FOX) 116 is formed on a top portion of the N-drift drain region 114 right next to the drain contact pickup region 122 and an insulated gate 118 disposed on top of the P-well body region 112 and the N-drift drain region 114 extends from overlapping a portion of the source region 120 to overlapping a portion of the field oxide 116. The insulated gate 118 is electrical insulated from the substrate 110 by a thin gate oxide (not shown). An active channel 126 is formed in the P-well body region underneath the gate 118 from the source region 120 to the P-N junction between the P-well body region 112 and the N-drift drain region 114 and an accumulation region 128 is region formed in the N-drift drain region 114 underneath the gate 118 from the PN junction to the first end of the field oxide 116 closer to the PN junction.

The existing N channel LDMOS with butting P-well body region and lightly doped N-drift drain region as described above may have poor quasi-saturation, poor hot carrier injection (HCI) performance and/or high R_dsON.

It is within this context that embodiments of the present invention arise.

BRIEF DESCRIPTION OF THE DRAWINGS

Other objects and advantages of the invention will become apparent upon reading the following detailed description and upon reference to the accompanying drawings in which:

FIG. 1 is a cross-sectional diagram illustrating a conventional N-channel LDMOS device.

FIG. 2 is a cross-sectional diagram illustrating an N-channel LDMOS device according to an embodiment of the present invention.

FIG. 3 is a cross-sectional diagram illustrating an N-channel LDMOS device without the field oxide and with accumulation enhancement implant of the present invention.

DESCRIPTION OF THE SPECIFIC EMBODIMENTS

In the following Detailed Description, reference is made to the accompanying drawings, which form a part hereof, and in which is shown by way of illustration specific embodiments in which the invention may be practiced. In this regard, directional terminology, such as “top,” “bottom,” “front,” “back,” “leading,” “trailing,” etc., is used with reference to the orientation of the figure(s) being described. Because components of embodiments of the present invention can be positioned in a number of different orientations, the directional terminology is used for purposes of illustration and is in no way limiting. It is to be understood that other embodiments may be utilized and structural or logical changes, including changes in the order of process steps, may be made without departing from the scope of the present invention. The following detailed description, therefore, is not to be taken in a limiting sense, and the scope of the present invention is defined by the appended claims.

According to embodiments of the present invention, quasi-saturation behavior, hot carrier injection (HCI) performance and the R_dsON may improve in LDMOS devices by implantation of an enhancement portion into the accumulation region and a long bird's beak of Local Oxidation of Silicon (LOCOS) grown in the same region. The enhancement portion has the same carrier type as the epitaxial layer. FIG. 2 is a cross-sectional schematic diagram of an N-channel LDMOS 200 according to an embodiment of the present invention. The N-channel LDMOS device 200 formed in a P-type substrate 110 includes a N+ source region 120 disposed in a P-well body region 112 and an N+ drain contact pickup region 122 disposed in N-drift drain region 114. A P+ body pickup region 124 is also formed on a top portion of the P-well body region 112 adjacent to the source region 120. A field insulator, e.g., a field oxide (FOX), 116 is formed on a top portion of the N-drift drain region 114 right next to the drain contact pickup region 122 and an insulated gate electrode 118 disposed on top of the P-well body region 112 and the N-drift drain region 114 extends from overlapping a portion of the source region 120 to overlapping a portion of the field oxide 116. The insulated gate 118 may be electrically insulated from the substrate 110 by a thin gate oxide (not shown). A P-type active channel 126 is formed in the P-well body region underneath the gate 118 from the source region 120 to the P-N junction between the P-well body region 112 and the N-drift drain region 114 and an N-type accumulation region 128 is formed in the N-drift drain region 114 underneath the gate 118 from the P-N junction to a first end of the field oxide 116 close to the P-N junction.

In embodiments of the present invention, additional dopants of the same conductivity type as the accumulation region may be implanted into a portion of the accumulation region to form an enhancement implant region. By way of example, and not by way of limitation, for an N-channel LDMOS, N-type dopants may be implanted at the top portion in the accumulation region 128 forming an enhancement implant region 130. The N-type implant region 130 increases the net carrier concentration in the accumulation region and reduces the resistivity in accumulation region. Thus, the quasi-saturation at high gate bias and the high R_dsON are improved. It is noted that for a P-type LDMOS device, P-type dopants may be used to form the enhancement region 130.

There is a gap g between the implant region 130 and the edge of P-well body region 112 so that the threshold voltage of the FET region is not reduced. Furthermore, the implant region 130 increases potential at a bird's beak portion 132 of the field oxide 116 when high bias is applied to the drain. Therefore, a long bird's beak 132 may be grown under the gate 118 to increase the breakdown voltage between the gate and the gate oxide. The bird's beak portion 132 of the field oxide 116 is generally thinner than the main portion 116 of the field oxide.

EXPERIMENTS

Experiments using process and device simulation have been carried out, which simulate implantation of arsenic into an accumulation region with different accumulation lengths (L_acc) cell pitch after the field oxidation is formed as shown in Table I below and in corresponding plots in the graph depicted in FIG. 3. The doping concentration of arsenic in these simulations was either zero or in the range of 10¹² cm⁻² for each accumulation length.

	TABLE I
	Lacc	Acc Imp	RdsON · A	Quasi Sat
	Short	No	High	Poor
	Short	Yes	Low	Poor
	Medium	No	High	Good
	Medium	Yes	Low	Good
	Long	No	High	Good
	Long	Yes	Low	Best

An LDMOS with having an accumulation enhancement implant and a long bird's beak, e.g., as shown in FIG. 2, can be manufactured with the conventional method for manufacturing a conventional LDMOS, as shown in FIG. 1, with some additional steps.

In the conventional process, for an N-channel LDMOS, a starting silicon P-substrate 110 with either N-type or P-type epitaxial layer or without epitaxial layer supported on the substrate is provided. P-type implantation is carried out to form P-well body region 112 followed with an N-type implant to form N-drift drain region 114 at the top portions of the substrate 110.

A field oxide 116 is then formed on a surface of the substrate 110. The bird's beak 132 of the field oxidation may be intentionally made long. To form the bird's beak 132, a thin layer of oxide may be formed on the surface of the substrate 110 and a nitride film may be formed on the thin oxide. As is well known, the length of the bird's beak portion 132 can be controlled by optimization of thickness of the nitride film and the underlying thin oxide. As an alternative to growing the bird's beak of the field oxide, a thick insulator, e.g., a thick oxide may be grown under the gate 118.

An enhancement implant of N-type dopants is carried out, after field oxide formed, through sacrificial oxide (not shown) into the accumulation region 128 forming the enhancement implant region 130. Drain side of the implant opening overlaps with field oxide, so that the implant is self-aligned.

Next, a polysilicon gate 118 can be formed on the surface of the thin gate oxide and the field oxide 116. Source region 120 doped with the high concentration N-type dopants can be formed in a region adjacent to the P+ body contact region 124 in the surface of the P-well body region 112 and drain contact pickup region 122 also doped with the high concentration N-type dopants in the surface of the N-drift drain region 114. As a result, the source region 120 and the drain contact pickup region 122 are formed at both sides of the field oxide 116 and isolated from each other. The gate, body, source and drain electrodes are thus formed to complete the device.

In an alternative embodiment, the enhancement implantation can be carried out after the formation of the poly gate with higher implant energy, e.g., using arsenic or phosphorous implantation for an N-channel LDMOS device.

It should be noted that the above technique can be applied to both N-type and P-type LDMOS. In addition, the enhancement implantation described above can be applied to a LDMOS transistor 300 without a field oxide as shown in FIG. 3.

While the above is a complete description of the preferred embodiments of the present invention, it is possible to use various alternatives, modifications, and equivalents. Therefore, the scope of the present invention should be determined not with reference to the above description but should, instead, be determined with reference to the appended claims, along with their full scope of equivalents. Any feature, whether preferred or not, may be combined with any other feature, whether preferred or not. In the claims that follow, the indefinite article “A” or “An” refers to a quantity of one or more of the item following the article, except where expressly stated otherwise. The appended claims are not to be interpreted as including means-plus-function limitations, unless such a limitation is explicitly recited in a given claim using the phrase “means for”. Any element in a claim that does not explicitly state “means for” performing a specified function, is not to be interpreted as a “means” or “step” clause as specified in 35 USC §112, ¶6.

Claims

1. A method for manufacturing a lateral double-diffused metal-oxide-semiconductor (LDMOS) transistor device, comprising:

forming a drift drain region on a semiconductor substrate of a first conductivity type, wherein the drift drain region is of a second conductivity type opposite the first conductivity type;

forming a source region, body region, and drain pickup region in the drift drain region, wherein the body region is of the first conductivity type, the source region is of the second conductivity type but more heavily doped than the drift drain region, and the drain contact pickup region is of the second conductivity type;

forming a body pickup region on the body region laterally adjacent the source region, wherein the body pickup region is of the first conductivity type but more heavily doped than the body region;

forming an active channel in the body region between the source region and a junction between the body region and the drift drain region;

forming an accumulation region in the drift drain region between the junction and the drain contact pickup region; and

forming an enhancement implant region in a portion of the accumulation region proximate the junction wherein the enhancement implant region contains additional dopants of the second conductivity type as the drift drain region, wherein there is a gap between the implant region and the junction.

2. The method of claim 1, further comprising, forming a field insulator on the drift drain region laterally adjacent the drain contact pickup region between the drain contact pickup region and the body region.

3. The method of claim 2, wherein forming the enhancement implant region includes implanting dopants into the accumulation region through an opening in an implant mask after forming the field insulator.

4. The method of claim 3, wherein the opening in the implant mask at least partially overlaps the field insulator so that the implanting of the dopants into the accumulation is self-aligned.

5. The method of claim 1, further comprising forming an insulated gate disposed on the body region and the drift drain region wherein the insulated gate overlaps a portion of the source region and a portion of the field oxide.

6. The method of claim 5, further comprising forming a field insulator on the drift drain region laterally adjacent the drain contact pickup region between the drain contact pickup region and the body region, wherein the field insulator is disposed between the gate electrode and the drift drain region.

7. The method of claim 6, further comprising forming a bird's beak portion of the field insulator between the enhancement implant region and the gate electrode.

8. The method of claim 6, further comprising forming a thick insulator disposed between the enhancement implant region and the gate electrode.