A power module includes a first semiconductor device having a collector terminal and an emitter terminal which extend outwardly from a molded resin, wherein at least one of the collector and emitter terminals is a bilaterally extending terminal extending outwardly from two opposite surfaces of the molded resin, and a second semiconductor device having the same construction as the first semiconductor device. The bilaterally extending terminal of the first semiconductor device is connected to a bilaterally extending terminal of the second semiconductor device.
|
3. A power module comprising:
a first semiconductor device having a collector terminal and an emitter terminal which extend outwardly from a molded resin, wherein at least one of said collector and emitter terminals is a bilaterally extending terminal extending outwardly from two opposite surfaces of said molded resin;
a second semiconductor device having the same construction as said first semiconductor device;
wherein said bilaterally extending terminal of said first semiconductor device is connected to a bilaterally extending terminal of said second semiconductor device, wherein:
said first semiconductor device includes an arm including two power semiconductor elements connected in series; and
a neutral terminal of said arm extends outwardly from directly above a neutral point of said arm within said molded resin.
4. A power module comprising:
a first semiconductor device having a collector terminal and an emitter terminal which extend outwardly from a molded resin, wherein at least one of said collector and emitter terminals is a bilaterally extending terminal extending outwardly from two opposite surfaces of said molded resin;
a second semiconductor device having the same construction as said first semiconductor device;
wherein said bilaterally extending terminal of said first semiconductor device is connected to a bilaterally extending terminal of said second semiconductor device, wherein:
said first semiconductor device constitutes the upper arm or lower arm, or both, of an arm including two power semiconductor elements connected in series; and
a neutral terminal between said two power semiconductor elements is a bilaterally extending terminal.
2. A power module comprising:
a first semiconductor device having a collector terminal and an emitter terminal which extend outwardly from a molded resin, wherein at least one of said collector and emitter terminals is a bilaterally extending terminal extending outwardly from two opposite surfaces of said molded resin;
a second semiconductor device having the same construction as said first semiconductor device;
wherein said bilaterally extending terminal of said first semiconductor device is connected to a bilaterally extending terminal of said second semiconductor device, wherein:
said first semiconductor device includes an arm including two power semiconductor elements connected in series;
said collector terminal is a p line serving as a high voltage line of said arm;
said emitter terminal is an n line serving as a low voltage line of said arm; and
said p line and said n line are said bilaterally extending terminals.
1. A power module comprising:
a first semiconductor device having a collector terminal and an emitter terminal which extend outwardly from a molded resin, wherein at least one of said collector and emitter terminals is a bilaterally extending terminal extending outwardly from two opposite surfaces of said molded resin;
a second semiconductor device having the same construction as said first semiconductor device;
wherein said bilaterally extending terminal of said first semiconductor device is connected to a bilaterally extending terminal of said second semiconductor device, and
a third semiconductor device having an emitter terminal and a collector terminal, said emitter terminal being a bilaterally extending terminal extending outwardly from two opposite surfaces of a molded resin, said collector terminal extending outwardly from said molded resin,
wherein said bilaterally extending terminal of said first semiconductor device is said collector terminal, and
wherein said emitter terminal of said first semiconductor device is connected to said collector terminal of said third semiconductor device.
|
1. Field of the Invention
The present invention relates to a power module including a plurality of semiconductor devices.
2. Background Art
Japanese Laid-Open Patent Publication No. 2007-220976 discloses a power module in which a plurality of semiconductor devices are arranged to form an inverter circuit. This power module includes a power bus bar and a ground bus bar for connecting each semiconductor device to the power supply or ground.
The bus bars of the power module disclosed in the above patent publication limit the reduction in size of the module.
The present invention has been made to solve this problem. It is, therefore, an object of the present invention is to provide a power module of a reduced size.
According to one aspect of the present invention, a power module includes a first semiconductor device having a collector terminal and an emitter terminal which extend outwardly from a molded resin, wherein at least one of the collector and emitter terminals is a bilaterally extending terminal extending outwardly from two opposite surfaces of the molded resin, and a second semiconductor device having the same construction as the first semiconductor device. The bilaterally extending terminal of the first semiconductor device is connected to a bilaterally extending terminal of the second semiconductor device.
Other and further objects, features and advantages of the invention will appear more fully from the following description.
First Embodiment
The collector terminal 12c of the first semiconductor device 12 is directly connected to a collector terminal 14b of the second semiconductor device 14 by solder. That is, the bilaterally extending terminal of the first semiconductor device 12 is connected to that of the second semiconductor device 14 by solder. Although the following description assumes that connection of terminals is achieved by soldering, it is to be understood that other connection methods such as welding and screwing may be used.
The third semiconductor device 16 has a molded resin 16a which covers power semiconductor elements. The terminals extending outwardly from the molded resin 16a are emitter terminals 16b and 16c, a collector terminal 16d, and a gate-emitter interconnection terminal 16e. The emitter terminals 16b and 16c together form a bilaterally extending terminal. The collector terminal 16d extends outwardly from a different surface of the molded resin 16a than those from which the bilaterally extending terminal extends outwardly.
The emitter terminal 16c of the third semiconductor device 16 is connected to an emitter terminal 18b of the fourth semiconductor device 18. That is, the bilaterally extending terminal of the third semiconductor device 16 is connected to that of the fourth semiconductor device 18.
The emitter terminal 12d of the first semiconductor device 12 is connected to the collector terminal 16d of the third semiconductor device 16, and the emitter terminal 14d of the second semiconductor device 14 is connected to the collector terminal 18d of the fourth semiconductor device 18.
The semiconductor device 22 has a molded resin 22a which covers power semiconductor elements. The terminals extending outwardly from the molded resin 22a are emitter terminals 22b and 22c, collector terminals 22d and 22e, and gate-emitter interconnection terminals 22f and 22g. The emitter terminals 22b and 22c together form a bilaterally extending terminal. The collector terminals 22d and 22e extend outwardly from a different surface of the molded resin 22a than those from which the bilaterally extending terminal extends outwardly. The emitter terminals 20d and 20e of the semiconductor device 20 are connected to the collector terminals 22d and 22e, respectively, of the semiconductor device 22.
Before describing the power module 10 of the first embodiment, and to facilitate the understanding thereof, the following description will be directed to a comparative conventional power module.
The power module 10 of the first embodiment, on the other hand, does not require bus bars, making it possible to reduce the size of the module. Specifically, the collector terminals of the semiconductor devices in the upper arms (which collector terminals must be connected to one another) are bilaterally extending terminals. Since these bilaterally extending terminals extend outwardly from two opposite sides of the molded resins of their respective semiconductor devices, they can be connected together so as to function as a power bus bar. Likewise, the emitter terminals of the semiconductor devices in the lower arms (which emitter terminals must be connected to one another) are also bilaterally extending terminals. Therefore, they can be connected together so as to function as a ground bus bar. Therefore, there is no need for the power module 10 to have bus bars.
Further, the emitter terminal of the semiconductor device in each upper arm such as the semiconductor device 12 extends from a different surface of the molded resin of the device than those from which the bilaterally extending terminal (i.e., the collector terminal) extends outwardly. Further, the collector terminal of the semiconductor device in each lower arm such as the semiconductor device 16 extends from a different surface of the molded resin of the device than those from which the bilaterally extending terminal (i.e., the emitter terminal) extends outwardly. Therefore, the emitter terminal in the upper arm can be directly connected to the collector terminal in the lower arm.
Thus, in each semiconductor device of the power module 10 of the first embodiment, at least one of the collector and emitter terminals of a power semiconductor element (IGBT) covered with the molded resin is a bilaterally extending terminal. As a result, these bilaterally extending terminals of the semiconductor devices of the power module 10 can be connected to one another, thereby eliminating the need for a bus bar resulting in a reduced size of the power module 10.
Although each semiconductor device in the power module 10 of the first embodiment includes one or two IGBTs, it is to be understood that the present invention is not limited to these numbers of IGBTs. For example, each semiconductor device may include three IGBTs, as shown in
Referring further to
Various other alterations may be made to the first embodiment. For example, although the power module 10 of the first embodiment is adapted for switching of high currents, namely, 75 A or more, it is to be understood that the embodiment may be applied to any suitable module that contains a plurality of semiconductor devices with collector and emitter terminals while still providing the advantages of the present invention. Further, instead of soldering, other methods such as welding and screwing may be used to connect the terminals. Further, the power semiconductor elements in each semiconductor device of the power module are not limited to IGBTs and FwDis. They may be power MOSFETs.
Second Embodiment
The collector terminals 202b and 202c together form a bilaterally extending terminal, and the emitter terminals 202d and 202e together form a bilaterally extending terminal. The collector terminal 202b and the emitter terminal 202d extend outwardly from the same surface of the molded resin 202a, and the collector terminal 202c and the emitter terminal 202e extend outwardly from the same surface of the molded resin 202a. The neutral terminals 202f, 202g, and 202h extend outwardly from a different surface of the molded resin 202a than those from which the bilaterally extending terminals extend outwardly.
The second semiconductor device 204 has the same construction as the first semiconductor device 202. A collector terminal of the first semiconductor device 202 is connected to a collector terminal of the second semiconductor device 204, and an emitter terminal of the first semiconductor device 202 is connected to an emitter terminal of the second semiconductor device 204.
As shown in
In the power module 200 of the second embodiment, the semiconductor device 202 is a complete three-phase inverter circuit and the semiconductor device 206 is a complete converter unit, resulting in a simplified construction and reduced size of the power module. This construction facilitates the manufacture of, e.g., an HEV-IPM for a vehicle-running and regenerative braking system. Although the power module includes two inverters, namely, the first semiconductor device 202 and the second semiconductor device 204 (e.g., for vehicle running and for regenerative braking, respectively), it is to be understood that the module may include only the first semiconductor device 202.
Various alterations may be made to the power module 200 of the second embodiment. For example, although the neutral terminal 206f and the collector terminal 206b are shown in
Third Embodiment
In accordance with the construction of the semiconductor device of the third embodiment, the distance between the neutral point of each phase (or arm) and its neutral terminal within the molded resin 202a can be reduced, resulting in reduced wiring inductance. Although the semiconductor device 300 is a three-phase inverter circuit, it is to be understood that the present embodiment is not limited to this particular semiconductor device, but may be applied to any suitable inverter circuit with one or more arms while still providing the advantages of the present invention. Further, the third embodiment is susceptible of at least alterations which are the same as or correspond to those that can be made to the first embodiment.
Fourth Embodiment
Since in the semiconductor device 400 of the fourth embodiment the neutral terminals 400f and 400g together form a laterally extending terminal, a plurality of the semiconductor devices 400 may be connected in parallel by connecting their collector terminals, emitter terminals, and neutral terminals. This makes it possible to easily increase the current capacity of the power module and thereby enable the module to be used in various systems.
Although the semiconductor device 400 of the fourth embodiment is an inverter circuit having only one phase (or arm), it is to be understood that the present invention is not limited to this particular type of inverter circuit. For example, the fourth embodiment may be applied to a semiconductor device which constitutes the upper arms or lower arms of two phases (or arms), or both the upper arms and lower arms; that is, neutral terminals of such a semiconductor device may together form a bilaterally extending terminal, thereby providing the advantages of the present invention.
The power module of the present invention includes a plurality of semiconductor devices each having at least one terminal which extends outwardly from the left and right sides of a molded resin. These terminals of the semiconductor devices are connected to one another, thereby eliminating the need for a bus bar resulting in a reduced size of the power module.
Obviously many modifications and variations of the present invention are possible in the light of the above teachings. It is therefore to be understood that within the scope of the appended claims the invention may be practiced otherwise than as specifically described.
The entire disclosure of a Japanese Patent Application No. 2011-050472, filed on Mar. 8, 2011 including specification, claims, drawings and summary, on which the Convention priority of the present application is based, are incorporated herein by reference in its entirety.
Aiko, Mitsunori, Araki, Shintaro, Hussein, Khalid Hassan, Okamoto, Korehide
Patent | Priority | Assignee | Title |
Patent | Priority | Assignee | Title |
3577633, | |||
5073811, | Jun 22 1989 | SGS-THOMSON MICROELECTRONICS S R L | Integratable power transistor with optimization of direct secondary breakdown phenomena |
6072240, | Oct 16 1998 | Denso Corporation | Semiconductor chip package |
6101114, | Aug 04 1998 | Kabushiki Kaisha Toshiba | Power conversion system having multi-chip packages |
7057273, | May 15 2001 | GEM SERVICES, INC | Surface mount package |
20120236500, | |||
JP2003229534, | |||
JP2005117728, | |||
JP2007110870, | |||
JP2007220976, | |||
JP2010199622, | |||
JP7221264, | |||
JP897459, | |||
WO2010147199, |
Executed on | Assignor | Assignee | Conveyance | Frame | Reel | Doc |
Dec 02 2011 | Mitsubishi Electric Corporation | (assignment on the face of the patent) | / |
Date | Maintenance Fee Events |
Date | Maintenance Schedule |
Apr 29 2017 | 4 years fee payment window open |
Oct 29 2017 | 6 months grace period start (w surcharge) |
Apr 29 2018 | patent expiry (for year 4) |
Apr 29 2020 | 2 years to revive unintentionally abandoned end. (for year 4) |
Apr 29 2021 | 8 years fee payment window open |
Oct 29 2021 | 6 months grace period start (w surcharge) |
Apr 29 2022 | patent expiry (for year 8) |
Apr 29 2024 | 2 years to revive unintentionally abandoned end. (for year 8) |
Apr 29 2025 | 12 years fee payment window open |
Oct 29 2025 | 6 months grace period start (w surcharge) |
Apr 29 2026 | patent expiry (for year 12) |
Apr 29 2028 | 2 years to revive unintentionally abandoned end. (for year 12) |