Disclosed herein are methods of preparing inorganic nanoparticles. In one aspect, the methods can comprise heating a reaction mixture comprising a c8 to c20 alkyl- or arylphosphonic acid and a source of cadmium or zinc to a temperature of greater than about 300° c.; adding to the reaction mixture an injection mixture comprising a c2 to c16 trialkyl- or triarylphosphine and a source of selenium, sulfur, or tellurium; and decreasing the temperature of the reaction mixture to less than about 300° c. Also disclosed herein are nanoparticles made from the disclosed methods. This abstract is intended as a scanning tool for purposes of searching in the particular art and is not intended to be limiting of the present invention.
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1. A method of preparing an inorganic nanoparticle comprising the steps of:
(a) heating a reaction mixture comprising a c8 to c20 alkyl- or arylphosphonic acid and a source of cadmium or zinc to a temperature of greater than about 300° c.;
(b) adding to the reaction mixture an injection mixture comprising a c2 to c16 trialkyl- or triarylphosphine and a source of selenium, sulfur, or tellurium; and
(c) decreasing the temperature of the reaction mixture to less than about 300° c.
14. A method of preparing an inorganic nanoparticle comprising the sequential steps of:
(a) heating a composition comprising a source of cadmium or zinc and a source of selenium, sulfur, or tellurium to a temperature sufficient to initiate nanoparticle formation and sufficient to support nanoparticle growth;
(b) cooling the composition to a temperature insufficient to initiate nanoparticle formation but sufficient to support nanoparticle growth; and
(c) cooling the composition to a temperature insufficient to initiate nanoparticle formation and insufficient to support nanoparticle growth.
12. A method of preparing an inorganic nanoparticle comprising the steps of:
(a) providing an approximately 1.0 M injection mixture comprising selenium and tri-n-butylphosphine;
(b) diluting the injection mixture with octadecene to approximately 0.10 M concentration;
(c) providing a reaction mixture comprising tri-n-octylphosphine oxide, hexadecylamine, cadmium oxide, and dodecylphosphonic acid;
(d) heating the reaction mixture to a temperature of about 330° c.;
(e) adding the injection mixture to the reaction mixture so as to decrease the temperature of the reaction mixture to from about 260° c. to about 270° c.; and
(f) adding toluene to the reaction mixture so as to decrease the temperature of the reaction mixture to less than about 150° c. within about ten seconds after adding the injection mixture to the reaction mixture.
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(a) heating a reaction mixture to a temperature sufficient to initiate nanoparticle formation and sufficient to support nanoparticle growth, and
(b) adding to the reaction mixture an injection mixture comprising a source of cadmium or zinc and a source of selenium, sulfur, or tellurium.
18. The method of
(a) heating a reaction mixture comprising a source of cadmium or zinc to a temperature sufficient to initiate nanoparticle formation and sufficient to support nanoparticle growth, and
(b) adding to the reaction mixture an injection mixture comprising a source of selenium, sulfur, or tellurium.
19. The product produced by the method of
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This application is a divisional of U.S. application Ser. No. 11/550,260, filed Oct. 17, 2006, which issued as U.S. Pat. No. 8,337,721 on Dec. 25, 2012, which application claims the benefit of U.S. Application Ser. No. 60/741,862, filed Dec. 2, 2005; U.S. Application Ser. No. 60/801,952, filed May 19, 2006; and U.S. Application Ser. No. 60/815,534, filed Jun. 20, 2006, all of which are hereby incorporated herein by reference in their entireties.
This invention was made with government support under Grant DE-FG02-02ER45957 awarded by the United States Department of Energy and Grant 1 RO1 EB007328-01 awarded by the National Institutes of Health. The U.S. government has certain rights in the invention.
In response to ever increasing energy demands and subsequent costs, a tremendous emphasis is being placed on energy-saving solid-state lighting devices in the form of light emitting diodes (LEDs). Specifically, a need exists for pure white-light LEDs as a more efficient replacement for conventional lighting sources. Switching to solid state lighting would reduce global electricity use by 50% and reduce power consumption by 760 GW in the United States alone over a 20 year period. Solid-State Lighting http://lighting.sandia.gov/; The Promise of Solid State Lighting for General Illumination, Optoelectronics Industry Development Association, Washington, D.C. (2001).
The complications associated with design and fabrication of such devices have generated great interest in developing white-light phosphors that do not depend on complex doping schemes or combinations of materials. One proposed solution is to use a mixture of semiconductor nanocrystals as the intrinsic emitting layer for an LED device. Achermann, M.; Petruska, M. A.; Kos, S.; Smith, D. L.; Koleske, D. D.; Klimov, V. I. Nature 2004, 429, 642-646; Mueller, A. H.; Petruska, M. A.; Achermann, M.; Werder, D. J.; Akhadov, E. A.; Koleske, D. D.; Hoffbauer, M. A.; Klimov, V. I. Nano Lett. 2005, 5, 1039-1044. Semiconductor nanocrystals can exhibit high fluorescence quantum efficiencies and large molar absorptivities. Alivisatos, A. P. Science 1996, 271, 933-937; Yu, W. W.; Qu, L.; Guo, W.; Peng, X. Chem. Mater. 2003, 15, 2854-2860. However, mixtures of such nanocrystals merely approximate white light by mixing the traditional red, green, and blue colors and result in a loss in total device efficiency due to self absorption for a device of more than a few monolayers. Mueller, A. H.; Petruska, M. A.; Achermann, M.; Werder, D. J.; Akhadov, E. A.; Koleske, D. D.; Hoffbauer, M. A.; Klimov, V. I. Nano Lett. 2005, 5, 1039-1044.
Therefore, there remains a need for methods and compositions that overcome these deficiencies and that effectively provide broad-emission nanocrystals.
In accordance with the purpose(s) of the invention, as embodied and broadly described herein, the invention, in one aspect, relates to an inorganic nanocrystal, also referred to as a quantum dot, capable of emitting white light.
In a further aspect, the invention relates to an inorganic nanoparticle having a surface and a diameter and capable of absorbing energy from a first electromagnetic region and capable of emitting light in a second electromagnetic region, wherein the diameter is less than about 5.0 nm, and wherein the second electromagnetic region comprises an at least about 50 nm wide (full-width at half-height (FWHH)) band of wavelengths.
In a further aspect, the invention relates to a plurality of nanoparticles of the invention, wherein the second electromagnetic region comprises an at least about 50 nm wide (FWHH) band of wavelengths.
In a further aspect, the invention relates to a method of preparing an inorganic nanoparticle comprising the steps of heating a reaction mixture comprising a C8 to C20 alkyl- or arylphosphonic acid and a source of cadmium or zinc to a temperature of greater than about 300° C.; adding to the reaction mixture an injection mixture comprising a C2 to C16 trialkyl- or triarylphosphine and a source of selenium, sulfur, or tellurium; and decreasing the temperature of the reaction mixture to less than about 300° C. In a further aspect, the inventive methods can further comprise the step of adding a solvent to the reaction mixture so as to decrease the temperature of the reaction mixture to less than about 250° C.
In a further aspect, the invention relates to a method of preparing an inorganic nanoparticle comprising the steps of providing an approximately 1.0 M injection mixture comprising selenium and tri-n-butylphosphine; diluting the injection mixture with octadecene to approximately 0.10 M concentration; providing a reaction mixture comprising tri-n-octylphosphine oxide, hexadecylamine, cadmium oxide, and dodecylphosphonic acid; heating the reaction mixture to a temperature of about 330° C.; adding the injection mixture to the reaction mixture so as to decrease the temperature of the reaction mixture to from about 260° C. to about 270° C.; and adding toluene to the reaction mixture so as to decrease the temperature of the reaction mixture to less than about 150° C. within about ten seconds after adding the injection mixture to the reaction mixture.
In a further aspect, the invention relates to a method of preparing an inorganic nanoparticle comprising the sequential steps of heating a composition comprising a source of cadmium or zinc and a source of selenium, sulfur, or tellurium to a temperature sufficient to initiate nanoparticle formation and sufficient to support nanoparticle growth; cooling the composition to a temperature insufficient to initiate nanoparticle formation but sufficient to support nanoparticle growth; and cooling the composition to a temperature insufficient to initiate nanoparticle formation and insufficient to support nanoparticle growth.
In a further aspect, the invention relates to the products produced by the methods of the invention.
In a further aspect, the invention relates to a frequency converter comprising at least one quantum dot of the invention, nanoparticle of the invention, plurality of nanoparticles of the invention, or product of the invention, or mixture thereof dispersed within a matrix, for example, a polymeric matrix or a glass matrix.
In a further aspect, the invention relates to a light emitting diode device comprising a light emitting diode capable of emitting energy of a first wavelength, and the frequency converter of the invention positioned within an emission path of the light emitting diode, wherein the frequency converter is capable of absorbing energy of the first wavelength.
In a further aspect, the invention relates to a method for producing a light emitting diode device comprising the step of positioning the frequency converter of the invention within an emission path of a light emitting diode capable of emitting energy of a first wavelength, wherein the frequency converter is capable of absorbing energy of the first wavelength.
In a further aspect, the invention relates to a modified fluorescent light source comprising a substantially optically transparent and substantially hermetically sealed tube having a first end, a second end, an interior surface, an exterior surface, and a lumen extending therethrough; a first electrode positioned at the first end; a second electrode positioned at the second end; inert gas vapor and mercury vapor within the lumen of the tube; a phosphor substitute comprising at least one frequency converter of the invention, quantum dot of the invention, nanoparticle of the invention, plurality of nanoparticles of any of the invention, or product of the invention, or mixture thereof substantially coating the interior surface or the exterior surface of the tube.
In a further aspect, the invention relates to an electroluminescent device comprising an n-type semiconductor, a p-type semiconductor, and a quantum dot layer in electrical or photonic communication with the n-type semiconductor and the p-type semiconductor, wherein the quantum dot layer comprises at least one quantum dot of the invention, nanoparticle of the invention, plurality of nanoparticles of any of the invention, product of the invention, or frequency converter of the invention, or mixture thereof.
In a further aspect, the invention relates to an energy cascade system comprising at least two quantum dots in photonic or energetic communication, wherein the first quantum dot is capable of absorbing energy from a first absorption electromagnetic region and capable of emitting energy in a first emission electromagnetic region, wherein the second quantum dot is capable of absorbing energy from a second absorption electromagnetic region and capable of emitting energy in a second emission electromagnetic region, and wherein the first emission electromagnetic region overlaps with the second absorption electromagnetic region.
Additional advantages of the invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The advantages of the invention will be realized and attained by means of the elements and combinations particularly pointed out in the appended claims. It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the invention, as claimed.
The patent or application file contains at least one drawing executed in color. Copies of this patent or patent application publication with color drawing(s) will be provided by the Office upon request and payment of the necessary fee.
The accompanying figures, which are incorporated in and constitute a part of this specification, illustrate several embodiments and together with the description serve to explain the principles of the invention.
The present invention may be understood more readily by reference to the following detailed description of aspects of the invention and the Examples included therein and to the Figures and their previous and following description.
Before the present compounds, compositions, articles, devices, and/or methods are disclosed and described, it is to be understood that they are not limited to specific synthetic methods unless otherwise specified, or to particular reagents unless otherwise specified, as such may, of course, vary. It is also to be understood that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting. Although any methods and materials similar or equivalent to those described herein can be used in the practice or testing of the present invention, example methods and materials are now described.
All publications mentioned herein are incorporated herein by reference to disclose and describe the methods and/or materials in connection with which the publications are cited. The publications discussed herein are provided solely for their disclosure prior to the filing date of the present application. Nothing herein is to be construed as an admission that the present invention is not entitled to antedate such publication by virtue of prior invention. Further, the dates of publication provided herein may be different from the actual publication dates, which may need to be independently confirmed.
As used in the specification and the appended claims, the singular forms “a,” “an” and “the” include plural referents unless the context clearly dictates otherwise. Thus, for example, reference to “a component,” “a polymer,” or “a particle” includes mixtures of two or more such components, polymers, or particles, and the like.
Ranges can be expressed herein as from “about” one particular value, and/or to “about” another particular value. When such a range is expressed, another embodiment includes from the one particular value and/or to the other particular value. Similarly, when values are expressed as approximations, by use of the antecedent “about,” it will be understood that the particular value forms another embodiment. It will be further understood that the endpoints of each of the ranges are significant both in relation to the other endpoint, and independently of the other endpoint. It is also understood that there are a number of values disclosed herein, and that each value is also herein disclosed as “about” that particular value in addition to the value itself. For example, if the value “10” is disclosed, then “about 10” is also disclosed. It is also understood that when a value is disclosed that “less than or equal to” the value, “greater than or equal to the value” and possible ranges between values are also disclosed, as appropriately understood by the skilled artisan. For example, if the value “10” is disclosed the “less than or equal to 10” as well as “greater than or equal to 10” is also disclosed. It is also understood that throughout the application, data is provided in a number of different formats and that this data represents endpoints and starting points, and ranges for any combination of the data points. For example, if a particular data point “10” and a particular data point 15 are disclosed, it is understood that greater than, greater than or equal to, less than, less than or equal to, and equal to 10 and 15 are considered disclosed as well as between 10 and 15. It is also understood that each unit between two particular units are also disclosed. For example, if 10 and 15 are disclosed, then 11, 12, 13, and 14 are also disclosed.
A residue of a chemical species, as used in the specification and concluding claims, refers to the moiety that is the resulting product of the chemical species in a particular reaction scheme or subsequent formulation or chemical product, regardless of whether the moiety is actually obtained from the chemical species. Thus, an ethylene glycol residue in a polyester refers to one or more —OCH2CH2O— units in the polyester, regardless of whether ethylene glycol was used to prepare the polyester. Similarly, a sebacic acid residue in a polyester refers to one or more —CO(CH2)8CO— moieties in the polyester, regardless of whether the residue is obtained by reacting sebacic acid or an ester thereof to obtain the polyester.
As used herein, the terms “optional” or “optionally” means that the subsequently described event or circumstance may or may not occur, and that the description includes instances where said event or circumstance occurs and instances where it does not.
As used herein, the term “copolymer” refers to a polymer formed from two or more different repeating units (monomer residues). By way of example and without limitation, a copolymer can be an alternating copolymer, a random copolymer, a block copolymer, or a graft copolymer.
As used herein, the term “visible spectrum” or “visible light” or “visible light spectrum” refers to the portion of the electromagnetic spectrum to which the human eye is sensitive, i.e., light with wavelengths from about 400 nm to about 700 nm.
As used herein, the term “white light” refers to light energy integrated over the visible portion of the spectrum (i.e., from about 400 nm to about 700 nm) so that all colors are blended to appear white to the eye. Such light contains approximately equal amounts of the primary additive colors of light; the human eye perceives this light as colorless.
As used herein, the term “quantum dot” refers to a semiconductor crystal with a nanoscale diameter, also called a nanocrystal, that because of its small size behaves like a potential well that confines electrons in three dimensions to a region on the order of the electrons' de Broglie wavelength in size, a few nanometers in a semiconductor. Typically, a quantum dot can absorb energy within a first electromagnetic region and emit light in a second electromagnetic region; the particular absorbance or emission regions can depend upon the material and diameter of the quantum dot. In one aspect, the nanoparticle of the invention can be considered a quantum dot or nanocrystal; however, the nanoparticle of the invention can differ from conventional quantum dots or nanocrystals in that the nanoparticle of the invention can emit broad band visible light, for example, white light.
Disclosed are the components to be used to prepare the compositions of the invention as well as the compositions themselves to be used within the methods disclosed herein. These and other materials are disclosed herein, and it is understood that when combinations, subsets, interactions, groups, etc. of these materials are disclosed that while specific reference of each various individual and collective combinations and permutation of these compounds may not be explicitly disclosed, each is specifically contemplated and described herein. For example, if a particular compound is disclosed and discussed and a number of modifications that can be made to a number of molecules including the compounds are discussed, specifically contemplated is each and every combination and permutation of the compound and the modifications that are possible unless specifically indicated to the contrary. Thus, if a class of molecules A, B, and C are disclosed as well as a class of molecules D, E, and F and an example of a combination molecule, A-D is disclosed, then even if each is not individually recited each is individually and collectively contemplated meaning combinations, A-E, A-F, B-D, B-E, B-F, C-D, C-E, and C-F are considered disclosed. Likewise, any subset or combination of these is also disclosed. Thus, for example, the sub-group of A-E, B-F, and C-E would be considered disclosed. This concept applies to all aspects of this application including, but not limited to, steps in methods of making and using the compositions of the invention. Thus, if there are a variety of additional steps that can be performed it is understood that each of these additional steps can be performed with any specific embodiment or combination of embodiments of the methods of the invention.
It is understood that the compositions disclosed herein have certain functions. Disclosed herein are certain structural requirements for performing the disclosed functions, and it is understood that there are a variety of structures that can perform the same function that are related to the disclosed structures, and that these structures will typically achieve the same result.
In one aspect, the invention relates to ultra-small cadmium selenide (CdSe) nanocrystals capable of emitting white light. The inorganic particles or nanocrystals can also be referred to as quantum dots. More specifically, in one aspect, the invention relates to a quantum dot capable of emitting white light. Typically, these ultra-small nanocrystals exhibit broadband emission (e.g., from about 420 nm to about 710 nm) throughout the visible light spectrum while not suffering from self absorption due to an unusually narrow particle size distribution and an unusually large Stokes shift (see, e.g.,
Without wishing to be bound by theory, it is believed that this broadband emission is the result of the size of the nanoparticle. In one aspect, the nanoparticles of the invention are so small that the surface is intimately involved in the emission; that is, the nanoparticle is essentially all surface, which is not the case with larger nanocrystals. Further, without wishing to be bound by theory, it is believed that the broadband emission is the result of the surface structure of the nanoparticle. That is, nanoparticles prepared by conventional techniques but of comparable size to the nanoparticles of the invention typically do not exhibit the broadband emission observed with the nanoparticles of the invention.
In a further aspect, the invention relates to an inorganic nanoparticle having a surface and a diameter and capable of absorbing energy from a first electromagnetic region and capable of emitting light in a second electromagnetic region, wherein the diameter is less than about 5.0 nm, and wherein the second electromagnetic region comprises an at least about 50 nm wide (FWHH) band of wavelengths.
In a yet further aspect, the invention relates to an inorganic nanoparticle having a surface and a diameter and capable of absorbing energy from a first electromagnetic region and capable of emitting light in a second electromagnetic region, wherein the diameter is less than about 2.0 nm, and wherein the second electromagnetic region comprises an at least about 100 nm wide (FWHH) band of wavelengths.
In one aspect, the nanoparticle of the invention is not produced by an etching process. In a further aspect, the nanoparticle of the invention is not produced by an inverse micellular process.
1. Particle Size
In one aspect, the nanoparticle of the invention has a diameter, which can also be referred to as a particle size. When, the nanoparticle of the invention is provided as a collection of nanoparticles, the diameter refers to the average diameter of the nanoparticles in the collection. While referring to the particle size as a diameter, it is understood that the particles can be spherical, approximately spherical, or nonspherical. In nonspherical cases, the diameter typically refers to the diameter of a sphere having the same hydrodynamic volume of the particle.
In one aspect, the diameter of nanoparticle of the invention can be controlled by the method of preparation. For example, by controlling the temperature of the preparation mixture, growth kinetics can be favored relative to nucleation (also referred to as nanoparticle formation or initiation) kinetics. Consequently, a collection of nanoparticles can be provided with an unusually narrow particle size distribution. In a further aspect, by further controlling the temperature of the preparation mixture, growth kinetics can be disfavored. Consequently, the size of the nanoparticle or collection of nanoparticles can be limited to a particular size or diameter.
In one aspect, the diameter of the nanoparticle of the invention is less than about 5.0 nm. For example, the diameter can be less than about 4.5 nm, less than about 4.0 nm, less than about 3.5 nm, less than about 3.0 nm, less than about 2.5 nm, less than about 2.0 nm, less than about 1.5 nm, or less than about 1.0 nm.
In a further aspect, the diameter of the nanoparticle of the invention can be from about 5.0 nm to about 0.5 nm, from about 5.0 nm to about 1.0 nm, from about 5.0 nm to about 2.0 nm, from about 5.0 nm to about 3.0 nm, from about 4.0 nm to about 0.5 nm, from about 4.0 nm to about 1.0 nm, from about 4.0 nm to about 2.0 nm, from about 4.0 nm to about 3.0 nm, from about 3.0 nm to about 0.5 nm, from about 3.0 nm to about 1.0 nm, from about 3.0 nm to about 2.0 nm, from about 2.0 nm to about 0.5 nm, or from about 2.0 nm to about 1.0 nm. In a further aspect, the diameter of the nanoparticle of the invention can be about 11 Å, about 12 Å, about 13 Å, about 14 Å, about 15 Å, about 16 Å, about 17 Å, about 18 Å, or about 19 Å.
2. Absorption Region
In one aspect, the nanoparticle of the invention is capable of absorbing energy in a first electromagnetic region. That is, the nanoparticle can absorb light having one or more wavelengths. In a further aspect, the first electromagnetic region comprises light with a wavelength of less than about 450 nm, for example less than about 425 nm, less than about 400 nm, less than about 375 nm, less than about 350 nm, less than about 325 nm, less than about 300 nm, less than about 275 nm, less than about 250 nm, less than about 225 nm, or less than about 200 nm. In a further aspect, the first electromagnetic region comprises light of a wavelength of from about 100 nm to about 450 nm, for example, from about 100 nm to about 170 nm, from about 170 nm to about 290 nm, from about 100 nm to about 290 nm, from about 290 nm to about 400 nm, from about 100 nm to about 320 nm, from about 290 nm to about 320 nm, from about 320 nm to about 400 nm, or from about 320 nm to about 450 nm. In a yet further aspect, the first electromagnetic region comprises light with a wavelength of from about 400 nm to about 430 nm, from about 410 nm to about 420 nm, or about 414 nm.
The absorption of a photon of light by the semiconducting material of the nanoparticle of the invention and subsequent emission of a lower energy photon by the nanoparticle of the invention results in fluorescence.
3. Emission Region
In one aspect, the nanoparticle of the invention is capable of emitting light in a second electromagnetic region. That is, the nanoparticle can emit light having one or more wavelengths. When the emission comprises more than one wavelength, such emission comprises an emission band and can be characterized by a maximum emission and an emission band width. Typically, absorbance band width or emission band width can be reported as a band measurement of full-width at half-height (FWHH). For example, an emission band can comprise light of wavelengths from about 420 nm to about 710 nm, having a maximum emission at about 560 nm and an emission band width of about 210 nm (FWHH) (see, e.g.,
In one aspect, the emission band comprises one or more wavelengths within the second electromagnetic region. In a further aspect, the emitted wavelengths are continuous. In a yet further aspect, the emitted wavelengths are discontinuous. In a further aspect, the emission band comprises all wavelengths within the second electromagnetic region. In a yet further aspect, the emission band comprises less than all wavelengths within the second electromagnetic region.
In one aspect, the second electromagnetic region comprises an at least about 50 nm wide (FWHH) band of wavelengths, for example, at least about 60 nm wide (FWHH), at least about 70 nm wide (FWHH), at least about 80 nm wide (FWHH), at least about 90 nm wide (FWHH), at least about 100 nm wide (FWHH), at least about 125 nm wide (FWHH), at least about 150 nm wide (FWHH), at least about 175 nm wide (FWHH), at least about 200 nm wide (FWHH), at least about 250 nm wide (FWHH), at least about 300 nm wide (FWHH), at least about 350 nm wide (FWHH), or at least about 400 nm wide (FWHH). In a further aspect, the second electromagnetic region comprises an emission band at least about 100 nm wide, at least about 125 nm wide, at least about 150 nm wide, at least about 175 nm wide, at least about 200 nm wide, at least about 250 nm wide, at least about 300 nm wide, at least about 350 nm wide, or at least about 400 nm wide.
In a further aspect, the second electromagnetic region can comprise a band of wavelengths at least about 50 nm wide (FWHH), at least about 60 nm wide (FWHH), at least about 70 nm wide (FWHH), at least about 80 nm wide (FWHH), at least about 90 nm wide (FWHH), at least about 100 nm wide (FWHH), at least about 125 nm wide (FWHH), at least about 150 nm wide (FWHH), at least about 175 nm wide (FWHH), at least about 200 nm wide (FWHH), at least about 250 nm wide (FWHH), at least about 300 nm wide (FWHH), at least about 350 nm wide (FWHH), or at least about 400 nm wide (FWHH) in the region between about 400 nm and about 700 nm, about 420 nm and about 710 nm, about 350 nm and about 750 nm, about 400 nm and about 600 nm, about 500 nm and about 700 nm, about 300 nm and about 800 nm, about 500 nm and about 750 nm, or about 350 nm and about 600 nm.
In further aspects, the second electromagnetic region can comprise light of all wavelengths from about 400 nm to about 700 nm or the visible light spectrum.
4. Nanocrystal Materials
In one aspect, the nanoparticle of the invention can be provided from materials known to those of skill in the art of the preparation of nanocrystals or quantum dots. For example, the nanoparticle of the invention can comprise at least one of cadmium selenide, cadmium sulfide, or cadmium telluride or a mixture thereof. In another example, the nanoparticle of the invention can comprise at least one of zinc sulfide, zinc selenide, zinc telluride, magnesium sulfide, magnesium selenide, magnesium telluride, or a mixture thereof.
In a further aspect, the nanoparticle of the invention can be provided as part of a collection of nanoparticles. In such an aspect, the collection of nanoparticles can comprise nanoparticles comprising at least one of cadmium selenide, cadmium sulfide, cadmium telluride, zinc sulfide, zinc selenide, zinc telluride, magnesium sulfide, magnesium selenide, magnesium telluride, or a mixture thereof. The individual nanoparticles can be the same or different in composition.
5. Stokes Shift
In one aspect, absorbance region or first electromagnetic region can be different from the emission region or second electromagnetic region, thereby providing a Stokes shift. Typically, the Stokes Shift is reported as the difference between a wavelength of maximum absorbance and a wavelength of maximum emission and can be expressed in nanometers (nm). For example, a nanoparticle can have an absorbance band with a maximum absorbance of about 414 nm and an emission band with a maximum emission at about 441 nm, thereby providing a Stokes Shift of about 27 nm (see, e.g.,
In a further aspect, the Stokes shift can be at least about 10 nm, at least about 15 nm, at least about 20 nm, at least about 25 nm, at least about 30 nm, at least about 35 nm, at least about 40 nm, at least about 45 nm, or at least about 50 nm. In a further aspect, the Stokes shift can be from about 15 nm to about 50 nm, from about 20 nm to about 50 nm, from about 30 nm to about 50 nm, from about 40 nm to about 50 nm, from about 20 nm to about 30 nm, from about 20 nm to about 40 nm, from about 20 nm to about 50 nm, from about 30 nm to about 40 nm, or from about 30 nm to about 50 nm.
6. Quantum Yield
In one aspect, the quantum dots of the invention exhibit a quantum yield. As used herein, the “quantum yield” of a radiation-induced process refers to the number of times that a defined event occurs per photon absorbed by the system. Thus, the quantum yield is a measure of the efficiency with which absorbed light produces some effect.
With respect to the quantum dots of the invention, quantum yield generally refers to a “light in” to “light out” ratio. Such a ratio can be measured by any of the methods for measuring electromagnetic absorbance and emission known to those of skill in the art. For example, the “light in” can be measured by a spectrophotometer set at the emission wavelength(s) of an electromagnetic energy source (e.g., an ultraviolet light emitter). As another example, the “light out” can be measured by a spectrophotometer set at the wavelengths of white light (i.e., one or more wavelengths of visible light) emitted by the quantum dots of the invention.
The term “quantum yield” can be applied to a single quantum dot or to an average of a plurality of quantum dots. In theory, a quantum yield must be greater than 0% and is typically less than 100%. However, for photo-induced or radiation-induced chain reactions, in which a single photon may trigger a long chain of transformations, quantum yields greater than 100% are possible.
In one aspect, the quantum yield of the quantum dots of the invention are greater than about 2%, for example, greater than about 3%, greater than about 4%, greater than about 5%, greater than about 6%, greater than about 7%, greater than about 8%, greater than about 9%, greater than about 10%, greater than about 12%, greater than about 15%, greater than about 20%, greater than about 25%, greater than about 30%, greater than about 35%, greater than about 40%, greater than about 45%, greater than about 50%, greater than about 55%, greater than about 60%, greater than about 65%, greater than about 70%, greater than about 75%, greater than about 80%, greater than about 85%, greater than about 90%, or greater than about 95%.
7. Nanoparticle Surface
In one aspect, due to a very small particle size, the nanoparticles of the invention can have an unusually high surface area to volume ratio. Consequently, the surface composition can have an influence on the observed properties of the nanoparticles of the invention. For example, the surface composition can be functionalized to enhance nanoparticle stability or to facilitate formation of dispersions or suspensions of collections of nanoparticles of the invention. Further, the surface of the nanocrystal can play an intimate role in the optical properties of the nanocrystal, such as the emission quantum yield (i.e., light in to light out ratio) and the width of the spectrum (i.e., emission band width).
The nanoparticles of the invention can be further functionalized at the surface. Such functionalization can occur during preparation or subsequent to preparation. In one aspect, the nanoparticle of the invention can further comprise an inorganic shell at the surface of the nanoparticle. The inorganic shell can comprise, for example, cadmium selenide, cadmium sulfide, cadmium telluride, zinc sulfide, zinc selenide, zinc telluride, magnesium sulfide, magnesium selenide, magnesium telluride, zinc sulfide, magnesium sulfide, or a mixture thereof. In a further aspect, inorganic shell can comprise, for example, cadmium oxide, magnesium oxide, zinc oxide, aluminum oxide, titanium dioxide, cadmium sulfoselenide, or cadmium selenium oxide. In one aspect, the inorganic shell can be optically transparent. In a further aspect, the inorganic shell can be absent from the nanoparticle of the invention.
In one aspect, the nanoparticle of the invention can further comprise an organic ligand coating at the surface of the nanoparticle. The organic ligand coating can comprise, for example, at least one of an alkylamine or arylamine residue, an alkyl- or arylphosphonic acid residue, a trialkyl- or triarylphosphine oxide residue, a trialkyl- or triarylphosphine residue, or a mixture thereof. In a further aspect, the organic ligand coating can comprise at least one of a hexadecylamine residue, a dodecylphosphonic acid residue, a tri-n-octylphosphine oxide residue, or a mixture thereof. In a yet further aspect, the organic ligand coating can comprise at least one alkyl or aryl phosphine; for example, the organic ligand coating can comprise tributylphosphine or triphenylphosphine. In an even further aspect, the organic ligand coating can comprise at least one alkylthiol or carboxylic acid or mixture thereof; for example, the organic ligand coating can comprise 1-octanethiol or decanoic acid. In a further aspect, organic ligand coating can be absent from the nanoparticle of the invention.
In a yet further aspect, the nanoparticle of the invention can further comprise an inorganic shell and an organic ligand coating at the surface of the nanoparticle.
8. Collections of Nanocrystals
In one aspect, the nanoparticle of the invention can be provided as part of a collection of nanoparticles comprising a plurality of nanoparticles of the invention. In such an aspect, the plurality of nanoparticles can exhibit the absorption properties and the emission properties disclosed herein for individual nanoparticles of the invention.
For example, the plurality of nanoparticles is capable of emitting light in a second electromagnetic region. In one aspect, the second electromagnetic region comprises an at least about 50 nm wide (FWHH) band of wavelengths, for example, at least about 60 nm wide (FWHH), at least about 70 nm wide (FWHH), at least about 80 nm wide (FWHH), at least about 90 nm wide (FWHH), at least about 100 nm wide (FWHH), at least about 125 nm wide (FWHH), at least about 150 nm wide (FWHH), at least about 175 nm wide (FWHH), at least about 200 nm wide (FWHH), at least about 250 nm wide (FWHH), at least about 300 nm wide (FWHH), at least about 350 nm wide (FWHH), or at least about 400 nm wide (FWHH). In a further aspect, the second electromagnetic region comprises an emission band at least about 100 nm wide, at least about 125 nm wide, at least about 150 nm wide, at least about 175 nm wide, at least about 200 nm wide, at least about 250 nm wide, at least about 300 nm wide, at least about 350 nm wide, or at least about 400 nm wide.
In a further aspect, the second electromagnetic region can comprise a band of wavelengths at least about 50 nm wide (FWHH), at least about 60 nm wide (FWHH), at least about 70 nm wide (FWHH), at least about 80 nm wide (FWHH), at least about 90 nm wide (FWHH), at least about 100 nm wide (FWHH), at least about 125 nm wide (FWHH), at least about 150 nm wide (FWHH), at least about 175 nm wide (FWHH), at least about 200 nm wide (FWHH), at least about 250 nm wide (FWHH), at least about 300 nm wide (FWHH), at least about 350 nm wide (FWHH), or at least about 400 nm wide (FWHH) in the region between about 400 nm and about 700 nm, about 420 nm and about 710 nm, about 350 nm and about 750 nm, about 400 nm and about 600 nm, about 500 nm and about 700 nm, about 300 nm and about 800 nm, about 500 nm and about 750 nm, or about 350 nm and about 600 nm. In further aspects, the second electromagnetic region can comprise light of all wavelengths from about 400 nm to about 700 nm or the visible light spectrum.
In one aspect, the plurality of nanoparticles of the invention can have an unusually narrow size distribution. Typically, the size distribution for a collection of nanoparticles of the invention can be such that at least about 80% of the nanoparticles have diameters within about 10% of the average diameter of the collection of nanoparticles. For example, the size distribution for a collection of nanoparticles of the invention can be such that at least about 50%—for example, at least about 60%, at least about 70%, at least about 80%, at least about 90%, or at least about 95%—of the nanoparticles have diameters within about 50%—for example, within about 40%, within about 30%, within about 20%, within about 10%, or within about 5%—of the average diameter of the collection of nanoparticles.
Several reported synthetic schemes have produced magic sized nanocrystals by growing larger nanocrystals, then etching them with various chemical etchants. Landes, C.; Braun, M.; Burda, C.; El-Sayed, M. A. Nano Lett. 2001, 1, 667-670; Landes, C.; El-Sayed, M. A. J. Phys. Chem. A 2002, 106, 7621-7627. Reports of magic-sized nanocrystals grown into the magic size, in contrast to magic-sized nanocrystals etched from larger nanocrystals, are relatively rare. Qu, L.; Yu, W. W.; Peng, X. Nano Lett. 2004, 4, 465-469; Chen, X.; Samia, A. C. S.; Lou, Y.; Burda, C. J. Am. Chem. Soc. 2005, 127, 4372-4375. Peng, Z. A.; Peng, X. J. Am. Chem. Soc. 2001, 123, 183-184. Inverse micellular methods and low temperature organometallic preparations can also yield magic size nanocrystals; however, none of these methods produce nanocrystals with comparable optical properties to high-temperature pyrolytically-synthesized nanocrystals. Kasuya, A.; Sivamohan, R.; Barnakov, Y. A.; Dmitruk, I. M.; Nirasawa, T.; Romanyuk, V. R.; Kumar, V.; Mamykin, S. V.; Tohji, K.; Jeyadevan, B.; Shinoda, K.; Kudo, T.; Terasaki, O.; Liu, Z.; Beloludov, R. V.; Sundararajan, V.; Kawazoe, Y. Nature Materials 2004, 3, 99-102. Rogach, A., L.; Kornowski, A.; Gao, M.; Eychmuller, A.; Weller, H. J. Phys. Chem. B 1999, 103, 3065-3069.
In one aspect, the invention relates to a method of preparing an inorganic nanoparticle comprising the steps of heating a reaction mixture comprising a C8 to C20 alkylphosphonic acid and a source of cadmium or zinc to a temperature of greater than about 300° C.; adding to the reaction mixture an injection mixture comprising a C2 to C16 trialkylphosphine and a source of selenium, sulfur, or tellurium; and decreasing the temperature of the reaction mixture to less than about 300° C. In a further aspect, the reaction mixture can further comprise at least one of a C4 to C20 trialkylphosphine oxide, or a C8 to C20 alkylamine or arylamine, or a mixture thereof. In a yet further aspect, the injection mixture can further comprise a C6 to C24 hydrocarbon.
In a further aspect, the invention relates to a method of preparing an inorganic nanoparticle comprising the steps of providing an approximately 1.0 M injection mixture comprising selenium and tri-n-butylphosphine; diluting the injection mixture with octadecene to approximately 0.10 M concentration; providing a reaction mixture comprising tri-n-octylphosphine oxide, hexadecylamine, cadmium oxide, and dodecylphosphonic acid; heating the reaction mixture to a temperature of about 330° C.; adding the injection mixture to the reaction mixture so as to decrease the temperature of the reaction mixture to from about 260° C. to about 270° C.; and adding toluene to the reaction mixture so as to decrease the temperature of the reaction mixture to less than about 150° C. within about ten seconds after adding the injection mixture to the reaction mixture.
In a further aspect, the nanocrystals of the invention are not prepared by an etching process. In a yet further aspect, the nanocrystals of the invention are not prepared by an inverse micellular process.
1. Reaction Mixture
In one aspect, the reaction mixture comprises a C8 to C20 alkylphosphonic acid and a source of cadmium or zinc. In a further aspect, the reaction mixture comprises a C4 to C20 trialkylphosphine oxide, a C8 to C20 alkylamine or arylamine, a C8 to C20 alkylphosphonic acid, and a source of cadmium or zinc. In one aspect, the reaction mixture comprises a solution. In a further aspect, the reaction mixture comprises a suspension. It is understood that these components can be added to the reaction mixture in any order. In a further aspect, one or more of these components can be absent from the reaction mixture.
In general, the reaction mixture can be provided at any concentration. However, in one aspect, the alkylphosphonic acid is provided in molar excess relative to the source of cadmium or zinc. For example, the alkylphosphonic acid to source of cadmium or zinc ratio can be about 1:1, about 1.05:1, greater than about 1:1, about 1.5:1, about 2:1, about 3:1, about 4:1, about 5:1, or greater than about 5:1.
In a further aspect, the trialkylphosphine oxide is provided relative to the amount of the alkylamine. For example, the trialkylphosphine oxide can present in the reaction mixture in an amount of about 0%, about 5%, about 10%, about 20%, about 30%, about 40%, about 50%, about 60%, about 70%, about 80%, about 90%, about 5%, or about 100% of the total weight of the trialkylphosphine oxide and the alkylamine. Conversely, in one aspect, the alkylamine can present in the reaction mixture in an amount of about 0%, about 5%, about 10%, about 20%, about 30%, about 40%, about 50%, about 60%, about 70%, about 80%, about 90%, about 5%, or about 100% of the total weight of the trialkylphosphine oxide and the alkylamine.
In one aspect, a typical reaction mixture can comprise the components in the following exemplary amounts: about 1 mmol of the source of cadmium or zinc, about 2 mmol of the alkylphosphonic acid, about 18.6 mmol of the trialkylphosphine oxide, and about 12.25 mmol of alkylamine. It is understood, however, that the relative amounts of the various components can, of course, be varied. For example, relative to about 1 mmol of the source of cadmium or zinc, from about 2 mmol to about 5 mmol—for example, about 2.5 mmol, about 3 mmol, about 3.5 mmol, about 4 mmol, or about 4.5 mmol—of the alkylphosphonic acid can be present; from about 10 mmol to about 40 mmol—for example, from about 15 mmol to about 20 mmol or from about 15 mmol to about 25 mmol—of the trialkylphosphine oxide can be present; and from about 5 mmol to about 30 mmol—for example, from about 10 mmol to about 15 mmol, from about 10 mmol to about 20 mmol, or from about 15 mmol to about 20 mmol—of alkylamine can be present.
a. Alkylamine or Arylamine
In one aspect, the reaction mixture comprises a C8 to C20 alkylamine or arylamine. The C8 to C20 alkylamine or arylamine can be any C8 to C20 alkylamine or arylamine known to those of skill in the art. The C8 to C20 alkylamine or arylamine can be, for example, a C8, C9, C10, C11, C12, C13, C14, C15, C16, C17, C18, C19, or C20 alkylamine or arylamine. In a further aspect, the alkylamine or arylamine can be a C12 to C20 alkylamine or arylamine, a C12 to C18 alkylamine or arylamine, or a C14 to C18 alkylamine or arylamine. In a further aspect, the alkylamine or arylamine comprises hexadecylamine. In one aspect, the alkylamine or arylamine can comprise mixtures of C8 to C20 alkylamines or arylamines. In a further aspect, the alkyl group of an alkylamine can be straight-chain or branched and can be substituted or unsubstituted. In a further aspect, the alkyl group of an alkylamine can be cyclic and/or the nitrogen of the alkylamine can comprise a heteroatom of a cyclic compound, for example, pyrimidine.
In one aspect, the C8 to C20 alkylamine or arylamine can comprise a primary amine, a secondary amine, a tertiary amine, or a mixture thereof. In one aspect, wherein the C8 to C20 alkylamine or arylamine is provided as a secondary amine, the alkylamine can have two C4 to C10 alkyl or aryl groups, which can be the same or different. In a further aspect, wherein the alkylamine or arylamine is provided as a secondary amine, the alkylamine or arylamine can have two C8 to C20 alkyl or aryl groups, which can be the same or different. In one aspect, wherein the C8 to C20 alkylamine or arylamine is provided as a tertiary amine, the alkylamine or arylamine can have three C2 to C7 alkyl or aryl groups, which can be the same or different and total to 8 to 20 carbon units. In a further aspect, wherein the alkylamine or arylamine is provided as a tertiary amine, the alkylamine can have three C8 to C20 alkyl or aryl groups, which can be the same or different.
In one aspect, the C8 to C20 alkylamine or arylamine can comprise an aromatic amine. That is, the nitrogen of the amine can be bound to one or more aromatic moieties, for example, to one or more benzene, naphthalene, pyridine, imidazole, chlorobenzene, toluene, or aniline residues. In a further aspect, the aryl group(s) of an arylamine can be the same or different and can be substituted or unsubstituted. In a further aspect, the nitrogen of the arylamine can comprise a heteroatom of a cyclic aromatic compound, for example, pyridine.
It is also understood that the C8 to C20 alkylamine or arylamine can be absent from the reaction mixture.
b. Alkyl- or Arylphosphonic Acid
In one aspect, the reaction mixture comprises a C8 to C20 alkyl- or arylphosphonic acid. The C8 to C20 alkyl- or arylphosphonic acid can be any C8 to C20 alkyl- or arylphosphonic acid known to those of skill in the art. The C8 to C20 alkyl- or arylphosphonic acid can be, for example, a C8, C9, C10, C11, C12, C13, C14, C15, C16, C17, C18, C19, or C20 alkyl- or arylphosphonic acid. In a further aspect, the alkyl- or arylphosphonic acid can be a C8 to C16 alkyl- or arylphosphonic acid, or a C10 to C14 alkyl- or arylphosphonic acid. In a further aspect, the alkyl- or arylphosphonic acid comprises dodecylphosphonic acid. In one aspect, the alkyl- or arylphosphonic acid can comprise mixtures of C8 to C20 alkyl- or arylphosphonic acids. In a further aspect, the alkyl group of the alkyl- or arylphosphonic acid can be straight-chain or branched and can be substituted or unsubstituted.
In a further aspect, an alkyl group of an alkyl- or arylphosphonic acid can be straight-chain or branched and can be substituted or unsubstituted. In a further aspect, an alkyl group of an alkyl- or arylphosphonic acid can be cyclic and/or the phosphorous of an alkyl- or arylphosphonic acid can comprise a heteroatom of a cyclic compound.
In one aspect, an alkyl- or arylphosphonic acid can comprise an aromatic alkyl- or arylphosphonic acid. That is, the phosphorous of the phosphonic acid can be bound to an aromatic moiety, for example, to a benzene, a naphthalene, a pyridine, an imidazole, a toluene, or an aniline residue. In a further aspect, the aryl group(s) of an alkyl- or arylphosphonic acid can be substituted or unsubstituted. In a further aspect, the phosphorous of the alkyl- or arylphosphonic acid can comprise a heteroatom of a cyclic aromatic compound.
It is also understood that the C8 to C20 alkyl- or arylphosphonic acid can be absent from the reaction mixture.
c. Trialkyl- or Triarylphosphine Oxide
In one aspect, the reaction mixture comprises a C4 to C20 trialkylphosphine oxide. The C4 to C20 trialkylphosphine oxide can be any C4 to C20 trialkylphosphine oxide known to those of skill in the art. That is, each alkyl group of the trialkylphosphine oxide can comprise a C4 to C20 alkyl group. The C4 to C20 trialkylphosphine oxide can be, for example, a C4, C5, C6, C7, C8, C9, C10, C11, C12, C13, C14, C15, C16, C17, C18, C19, or C20 trialkylphosphine oxide. In a further aspect, the trialkylphosphine oxide can be a C4 to C12 trialkylphosphine oxide or a C6 to C10 trialkylphosphine oxide. In a further aspect, the C4 to C20 trialkylphosphine oxide comprises tri-n-octylphosphine oxide. In one aspect, the trialkylphosphine oxide can comprise mixtures of C8 to C20 trialkylphosphine oxides. In a further aspect, the alkyl groups of the trialkylphosphine oxide can be straight-chain or branched, can be substituted or unsubstituted, and can be the same or different.
In a further aspect, one or more alkyl group(s) of an trialkyl- or triarylphosphine oxide can be straight-chain or branched and can be substituted or unsubstituted. In a further aspect, one or more alkyl group(s) of an trialkyl- or triarylphosphine oxide can be cyclic and/or the phosphorous of an trialkyl- or triarylphosphine oxide can comprise a heteroatom of a cyclic compound.
In one aspect, an trialkyl- or triarylphosphine oxide can comprise an aromatic trialkyl- or triarylphosphine oxide. That is, the phosphorous of the trialkyl- or triarylphosphine oxide can be bound to one or more aromatic moieties, for example, to benzene, naphthalene, pyridine, imidazole, chlorobenzene, toluene, or aniline residues. In a further aspect, the aryl group(s) of an alkyl- or arylphosphonic acid can be the same or different and can be substituted or unsubstituted.
It is also understood that the C4 to C20 trialkylphosphine oxide can be absent from the reaction mixture.
d. Source of Cadmium or Zinc
In one aspect, the reaction mixture comprises a source of cadmium or zinc. That is, in one aspect, the reaction mixture comprises at least one compound capable of providing cadmium, zinc, or a mixture thereof. In a further aspect, the reaction mixture comprises more than one compound capable of providing cadmium, zinc, or a mixture thereof.
The source of cadmium or zinc can be any source of cadmium or zinc known to those of skill in the art. For example, the source of cadmium or zinc can comprise at least one of an oxide of cadmium or zinc, a dialkyl cadmium or dialkyl zinc, a carboxylate salt of cadmium or zinc or a phosphonate salt of cadmium or zinc or a mixture thereof.
In one aspect, the source of cadmium or zinc can comprise at least one of an oxide of cadmium or zinc. That is, the source of cadmium or zinc can be, for example, at least one of zinc oxide or cadmium oxide or a mixture thereof.
In one aspect, the source of cadmium or zinc can comprise at least one of a dialkyl cadmium or dialkyl zinc or a mixture thereof. In one aspect, the alkyl groups can be the same or different, can be substituted or unsubstituted, and can be straight-chain or branched. In a further aspect, the alkyl can be one or more C1 to C6 alkyl groups, for example, at least one of methyl, ethyl, propyl, butyl, pentyl, or hexyl groups or a mixture thereof. In further aspects, the alkyl can be one or more C1 to C12 alkyl groups or C6 to C12 alkyl groups.
In one aspect, the source of cadmium or zinc can comprise at least one of a carboxylate salt of cadmium or zinc or a phosphonate salt of cadmium or zinc or a mixture thereof. In one aspect, the carboxylate or a phosphonate group can be alkyl or aryl, can be substituted or unsubstituted, and can be straight-chain or branched. In a further aspect, the carboxylate or phosphonate group can be one or more C1 to C6 carboxylate or phosphonate groups, for example, at least one of methyl, ethyl, propyl, butyl, pentyl, or hexyl carboxylate or phosphonate group or a mixture thereof. In further aspects, the carboxylate or phosphonate group can be one or more C1 to C12 carboxylate or phosphonate groups or C6 to C12 carboxylate or phosphonate groups.
In a yet further aspect, the source of cadmium or zinc comprises at least one of zinc oxide, dimethyl zinc, cadmium oxide, cadmium acetate, cadmium stearate, or dimethyl cadmium or a mixture thereof. In a further aspect, the source of cadmium or zinc comprises cadmium oxide.
In one aspect, the source of cadmium or zinc and the alkylphosphonic acid can be provided in a molar ratio of from about 5:1 Cd/Zn:phosphonic acid to about 1:1 Cd/Zn:phosphonic acid. For example, the source of cadmium or zinc and the alkylphosphonic acid can be provided in a molar ratio of from about 4.5:1 Cd/Zn:phosphonic acid, about 4:1 Cd/Zn:phosphonic acid, about 3.5:1 Cd/Zn:phosphonic acid, about 3:1 Cd/Zn:phosphonic acid, about 2.5:1 Cd/Zn:phosphonic acid, about 2:1 Cd/Zn:phosphonic acid, or about 1.5:1 Cd/Zn:phosphonic acid. In a further aspect, the source of cadmium or zinc and the alkylphosphonic acid can be provided in a molar ratio of greater than about 5:1 Cd/Zn:phosphonic acid.
e. Reaction Temperature
In one aspect, the reaction mixture is heated to a temperature before the injection mixture is added. In a further aspect, the reaction mixture is heated to a temperature sufficient to facilitate both initiation of nanocrystal formation and growth of nanocrystals before the injection mixture is added.
For example, the temperature can be greater than about 200° C., greater than about 225° C., greater than about 250° C., greater than about 275° C., greater than about 300° C., greater than about 310° C., greater than about 320° C., greater than about 330° C., greater than about 340° C., or greater than about 350° C. In a further aspect, the temperature can be less than about 400° C., less than about 450° C., less than about 400° C., less than about 375° C., less than about 350° C., less than about 325° C., less than about 300° C., less than about 275° C., less than about 250° C., or less than about 225° C.
In a further aspect, the reaction mixture can be heated to a temperature of from about 200° C. to about 400° C. before the injection mixture is added. For example, the temperature can be from about 250° C. to about 400° C., from about 300° C. to about 400° C., from about 250° C. to about 350° C., from about 300° C. to about 350° C., about 310° C., about 320° C., about 330° C., or about 340° C.
2. Injection Mixture
In one aspect, the injection mixture comprises a C2 to C16 trialkyl- or triarylphosphine and a source of selenium, sulfur, or tellurium. In a further aspect, the injection mixture comprises a C2 to C16 trialkyl- or triarylphosphine, a C6 to C24 hydrocarbon, and a source of selenium, sulfur, or tellurium. In one aspect, the injection mixture comprises a solution. In a further aspect, the injection mixture comprises a suspension. It is understood that these components can be added to the injection mixture in any order. In a further aspect, one or more of these components can be absent from the injection mixture.
In general, the injection mixture can be provided at any concentration. However, in one aspect, the injection mixture can be provided as a solution of the source of selenium, sulfur, or tellurium in the C2 to C16 trialkyl- or triarylphosphine, which can then be diluted with a C6 to C24 hydrocarbon. In a further aspect, the injection mixture can be provided as a suspension of the source of selenium, sulfur, or tellurium in the C2 to C16 trialkyl- or triarylphosphine, which can then be diluted with a C6 to C24 hydrocarbon. The mixture can be provided at any desired concentration and is typically provided at a concentration of from about 0.1 M to about 7 M. For example, the source of selenium, sulfur, or tellurium can be provided as an approximately 1.0 M (e.g., approximately 0.25 M, approximately 0.5 M, approximately 0.75 M, approximately 1.25 M, approximately 1.5 M, approximately 1.75 M, approximately 2 M, approximately 2.5 M, or approximately 3 M) mixture in the C2 to C16 trialkyl- or triarylphosphine and can then be optionally diluted with a C6 to C24 hydrocarbon to, for example, an approximately 0.1 M (e.g., approximately 0.025 M, approximately 0.05 M, approximately 0.075 M, approximately 0.125 M, approximately 0.15 M, approximately 0.175 M, approximately 0.2 M, approximately 0.25 M, or approximately 0.3 M) concentration.
In one aspect, source of selenium, sulfur, or tellurium can be provided in an amount and concentration so as to achieve a Cd/Zn:Se/S/Te ratio of greater than about 1.01:1 after the injection mixture is added to the reaction mixture. That is, in one aspect, the overall reaction can be maintained cation-rich (i.e., Cd- or Zn-rich). For example, the Cd/Zn:Se/S/Te ratio can be greater than about 1.01:1, greater than about 1.05:1, greater than about 1.1:1, greater than about 1.2:1, greater than about 1.3:1, greater than about 1.4:1, greater than about 1.5:1, greater than about 2:1, greater than about 3:1, greater than about 4:1, or greater than about 5:1.
In a further aspect, the Cd/Zn:Se/S/Te ratio can be from about 1.01:1 to about 5:1, for example, about 1.05:1 to about 4:1, about 1.1:1 to about 3:1, about 1.5:1 to about 2:1, about 1.5:1 to about 2.5:1, about 2:1 to about 2.5:1, about 1.01:1, about 1.05:1, about 1.1:1, about 1.2:1, about 1.3:1, about 1.4:1, about 1.5:1, about 2:1, about 3:1, greater than about 4:1, or about 5:1.
In a yet further aspect, the Cd/Zn:Se/S/Te ratio can be from about 1:1.01 to about 1:5, for example, about 1:1.05 to about 1:4, about 1:1.1 to about 1:3, about 1:1.5 to about 1:2, about 1:1.5 to about 1:2.5, about 1:2 to about 1:2.5, about 1:1.01, about 1:1.05, about 1:1.1, about 1:1.2, about 1:1.3, about 1:1.4, about 1:1.5, about 1:2, about 1:3, greater than about 1:4, or about 1:5. In a still further aspect, the Cd/Zn:Se/S/Te ratio can be about 1:1.3, for example, from about 1:1.0 to about 1:6, from about 1:1.1 to about 1:5, from about 1:1.2 to about 1:4, or from about 1:1.25 to about 1:35.
In a further aspect, the C2 to C16 trialkyl- or triarylphosphine is provided relative to the amount of the C6 to C24 hydrocarbon. For example, the trialkyl- or triarylphosphine can present in the reaction mixture in an amount of about 1%, about 2.5%, about 5%, about 10%, about 15%, about 20%, about 30%, about 40%, about 50%, about 60%, about 70%, about 80%, about 90%, about 95%, or about 100%, of the total weight of the trialkyl- or triarylphosphine and the hydrocarbon. Conversely, in one aspect, the hydrocarbon can present in the reaction mixture in an amount of about 99%, about 97.5%, about 95%, about 90%, about 85%, about 80%, about 70%, about 60%, about 50%, about 40%, about 30%, about 20%, about 10%, about 5%, or about 0% of the total weight of trialkyl- or triarylphosphine and the hydrocarbon. It is understood that the relative amounts can also be expressed as a ratio.
In certain aspects, the C6 to C24 hydrocarbon and the C2 to C16 trialkyl- or triarylphosphine are provided in a ratio in the injection solution of less than about 70:30, of about 70:30, of less than about 75:25, or of about 75:25. In further aspects, the C6 to C24 hydrocarbon can be octadecene, and the C2 to C16 trialkyl- or triarylphosphine can be tri-n-butylphosphine. For example, the C6 to C24 hydrocarbon can be octadecene, the C2 to C16 trialkyl- or triarylphosphine can be tri-n-butylphosphine are, and the octadecene and the tri-n-butylphosphine can be provided in a ratio in the injection solution of from about 80:20 to about 60:40. In a further example, the C6 to C24 hydrocarbon can be octadecene, the C2 to C16 trialkyl- or triarylphosphine can be tri-n-butylphosphine are, and the octadecene and the tri-n-butylphosphine can be provided in a ratio in the injection solution of from about 70:30 to about 75:25. In certain aspects, these methods can prepare inorganic nanoparticles having a quantum yield of at least about 5%, at least about 8%, or at least about 10%.
Without wishing to be bound by theory, it is believed that the ratio of the C2 to C16 trialkyl- or triarylphosphine to the C6 to C24 hydrocarbon can affect the quantum yield of the resultant nanocrystals. That is, certain ratios of the C2 to C16 trialkyl- or triarylphosphine to the C6 to C24 hydrocarbon can increase the rate of reduction of cadmium oxide or zinc oxide, thereby facilitating availability of the metal. Further, without wishing to be bound by theory, it is believed that the disclosed ratios of the C2 to C16 trialkyl- or triarylphosphine to the C6 to C24 hydrocarbon can facilitate formation of the core crystal structure of the nanocrystals, thereby providing superior structures.
a. Trialkyl- or Triarylphosphine
In one aspect, the reaction mixture comprises a C2 to C16 trialkyl- or triarylphosphine. The C2 to C16 trialkyl- or triarylphosphine can be any C2 to C16 trialkyl- or triarylphosphine known to those of skill in the art. That is, each alkyl group of a C2 to C16 trialkylphosphine can comprise a C2 to C16 alkyl group. A C2 to C16 trialkylphosphine can be, for example, a C2, C3, C4, C5, C6, C7, C8, C9, C10, C11, C12, C13, C14, C15, or C16 trialkylphosphine. In a further aspect, a trialkylphosphine can be a C2 to C12 trialkylphosphine, a C2 to C10 trialkylphosphine, a C2 to C8 trialkylphosphine, or a C2 to C6 trialkylphosphine. In a further aspect, a C2 to C16 trialkylphosphine comprises tri-n-butylphosphine. In one aspect, a C2 to C16 trialkylphosphine can comprise mixtures of C2 to C16 trialkylphosphines. In a further aspect, the alkyl groups of a C2 to C16 trialkylphosphine can be straight-chain or branched, can be substituted or unsubstituted, and can be the same or different. In a further aspect, the alkyl group of a trialkylphosphine can be cyclic and/or the phosphorous of a trialkylphosphine can comprise a heteroatom of a heterocyclic compound.
In one aspect, the C2 to C16 trialkyl- or triarylphosphine can comprise an aromatic phosphine. That is, the phosphorous of the phosphine can be bound to one or more aromatic moieties, for example, to one or more benzene, naphthalene, pyridine, imidazole, chlorobenzene, toluene, or aniline residues. In a further aspect, the aryl group(s) of an arylphosphine can be the same or different and can be substituted or unsubstituted. In a further aspect, the phosphorous of the arylphosphine can comprise a heteroatom of a cyclic aromatic compound.
It is also understood that the C2 to C16 trialkyl- or triarylphosphine can be absent from the reaction mixture.
b. Hydrocarbon
In one aspect, the reaction mixture comprises a C6 to C24 hydrocarbon. The hydrocarbon can be any C6 to C24 hydrocarbon known to those of skill in the art. The C6 to C24 hydrocarbon can be, for example, a C6, C7, C8, C9, C10 C11, C12, C13, C14, C15, C16 C17, C18, C19, C20, C21, C22, C23, or C24 hydrocarbon. In a further aspect, the C6 to C24 hydrocarbon can be a C6 to C12 hydrocarbon, a C14 to C22 hydrocarbon, or a C16 to C20 hydrocarbon. In a further aspect, the C6 to C24 hydrocarbon comprises octadecene. In one aspect, the C6 to C24 hydrocarbon can comprise mixtures of C6 to C24 hydrocarbons. In a further aspect, the C6 to C24 hydrocarbon can be straight-chain or branched and can be substituted or unsubstituted. For example, halogenated hydrocarbons can be used. In a further aspect, the C6 to C24 hydrocarbon can comprise a cyclic hydrocarbon.
In a further aspect, the C6 to C24 hydrocarbon can comprise an aromatic hydrocarbon. That is, the hydrocarbon can comprise, for example, benzene, naphthalene, pyridine, imidazole, chlorobenzene, toluene, or aniline. Further, in one aspect, the hydrocarbon can comprise one or more benzene, naphthalene, pyridine, imidazole, chlorobenzene, toluene, or aniline residues. In a further aspect, the aryl group(s) of the C6 to C24 hydrocarbon can be the same or different and can be substituted or unsubstituted.
It is also understood that the C6 to C24 hydrocarbon can be absent from the reaction mixture.
c. Source of Selenium, Sulfur, or Tellurium
In one aspect, the injection mixture comprises a source of selenium, sulfur, or tellurium. That is, in one aspect, the injection mixture comprises at least one compound capable of providing selenium, sulfur, or tellurium or a mixture thereof. In a further aspect, the reaction mixture comprises more than one compound capable of providing selenium, sulfur, or tellurium or a mixture thereof.
The source of selenium, sulfur, or tellurium can be any source of selenium, sulfur, or tellurium known to those of skill in the art. In one aspect, the source of selenium, sulfur, or tellurium comprises at least one of selenium powder, sulfur powder, or tellurium powder or a mixture thereof. In a further aspect, the source of selenium, sulfur, or tellurium comprises at least one of hexamethyl silylsulfide, hexamethyl silylselenide, or hexamethyl silyltelluride or a mixture thereof.
d. Injection Temperature
In one aspect, the injection mixture can be provided at any convenient temperature. In a further aspect, the injection mixture can be provided at a temperature lower than that of the reaction mixture temperature. For example, the injection mixture can be provided at room temperature. It is also understood that the injection mixture can be provided at a temperature higher than room temperature. Typically, the injection mixture is provided at a temperature of equal to or less than that necessary to maintain nanocrystal growth. In one aspect, the injection mixture is provided at a temperature of less than that necessary to maintain nanocrystal formation initiation. By “the injection mixture can be provided,” it is meant that, in one aspect, the injection mixture can be added to the reaction mixture at the provided temperature.
In one aspect, the temperature of the injection mixture can be maintained at a temperature of less than that necessary to initiate nanocrystal formation. That is, an injection mixture containing both a source of source of cadmium or zinc and a source of selenium, sulfur, or tellurium can be provided at a temperature of less than that necessary to initiate nanocrystal formation until a heating step is performed, thereby initiating nanocrystal formation. In a further aspect, the temperature of the injection mixture can be maintained at a temperature of less than that necessary to maintain nanocrystal growth. That is, an injection mixture containing a source of selenium, sulfur, or tellurium can be provided at a temperature of less than that necessary to initiate nanocrystal formation until added to the reaction mixture, thereby decreasing the temperature of the reaction mixture to less than that necessary to initiate nanocrystal formation.
In a further aspect, the injection mixture can be provided at less than about 300° C., less than about 275° C., less than about 250° C., less than about 225° C., less than about 200° C., less than about 175° C., less than about 150° C., less than about 125° C., less than about 100° C., less than about 75° C., or less than about 50° C. In a further aspect, the injection mixture can be provided at about 300° C., about 275° C., about 250° C., about 225° C., about 200° C., about 175° C., about 150° C., about 125° C., about 100° C., about 75° C., about 50° C., or about 25° C.
In a further aspect, the injection mixture can be provided at a temperature of from about 25° C. to about 300° C., from about 25° C. to about 275° C., from about 25° C. to about 250° C., from about 25° C. to about 225° C., from about 25° C. to about 250° C., from about 25° C. to about 225° C., from about 25° C. to about 200° C., from about 25° C. to about 175° C., from about 25° C. to about 150° C., from about 25° C. to about 125° C., from about 25° C. to about 100° C., from about 200° C. to about 300° C., from about 100° C. to about 200° C., from about 150° C. to about 250° C., or from about 50° C. to about 150° C.
In a yet further aspect, the injection mixture can be provided at temperature less than room temperature. For example, the injection mixture can be provided at a temperature of from about 0° C. to about 25° C., from about 5° C. to about 25° C., from about 10° C. to about 25° C., from about 15° C. to about 25° C., from about 0° C. to about 10° C., or of less than about 0° C.
3. Temperature Decrease
In one aspect, the injection mixture can be added to the reaction mixture so as to decrease the temperature of the reaction mixture and, thus, the temperature of the resulting combined mixture. In one aspect, the addition of the injection mixture lowers the temperature of the combined mixture to a temperature at which nanocrystal initiation is disfavored, yet nanocrystal growth is still favored. In a further aspect, the addition of the injection mixture lowers the temperature of the combined mixture to a temperature at which both nanocrystal initiation and nanocrystal growth are disfavored.
In one aspect, addition of the injection mixture decreases the temperature of the reaction mixture to less than about 300° C., for example, to less than about 270° C., to less than about 250° C., to less than about 225° C., to less than about 200° C., to less than about 175° C., to less than about 150° C., or to less than about 125° C. In a further aspect, addition of the injection mixture decreases the temperature of the reaction mixture to from about 150° C. to about 300° C., from about 150° C. to about 250° C., from about 150° C. to about 200° C., from about 200° C. to about 250° C., or from about 250° C. to about 300° C.
It is understood that both injection mixture temperature and injection mixture addition rate can influence the temperature of the combined mixture and, thus the kinetics of nanocrystal initiation and nanocrystal growth. Typically, nucleation can occur at relatively higher temperatures, and growth can occur at relatively lower temperatures. If, for example, injection is distributed over a longer time period, the temperature remains at the nucleation temperature longer and, thus, more nanocrystals can nucleate. If, as a further example, injection is distributed over a shorter time period, the temperature remains at the nucleation temperature for less time and, thus, fewer nanocrystals can nucleate.
In one aspect, the temperature of the reaction mixture is decreased to less than a temperature within a time after adding the injection mixture to the reaction mixture. For example, the temperature can be about 330° C., about 320° C., about 310° C., about 300° C., about 290° C., about 280° C., about 270° C., about 260° C., about 250° C., about 240° C., about 230° C., about 220° C., about 210° C., about 200° C., about 190° C., about 180° C., about 170° C., about 160° C., or about 150° C. For example, the time can be about 90 seconds, about 60 seconds, about 30 seconds, about 20 seconds, about 10 seconds, or about 5 seconds.
It is also understood that external cooling can be used to decrease the temperature of the combined mixture, both in place of and in concert with the cooling effect of the addition of injection mixture.
4. Temperature Control Solvents
In one aspect, a solvent can be added to the combined mixture after addition of the injection mixture, or simultaneous with the addition of the injection mixture, so as to decrease the temperature of the combined mixture. That is, the addition of a solvent can lower the temperature of the combined mixture. In one aspect, the addition of a solvent mixture lowers the temperature of the combined mixture to a temperature at which both nanocrystal initiation and nanocrystal growth are disfavored.
In one aspect, a solvent can be provided at any convenient temperature. In a further aspect, a solvent can be provided at a temperature lower than that of the combined mixture temperature. For example, a solvent can be provided at room temperature. Typically, a solvent is provided at a temperature of less than that necessary to maintain nanocrystal growth. By “a solvent can be provided,” it is meant that, in one aspect, a solvent can be added to the combined mixture at the provided temperature.
In a further aspect, a solvent can be provided at less than about 300° C., less than about 275° C., less than about 250° C., less than about 225° C., less than about 200° C., less than about 175° C., less than about 150° C., less than about 125° C., less than about 100° C., less than about 75° C., or less than about 50° C. In a further aspect, a solvent can be provided at about 300° C., about 275° C., about 250° C., about 225° C., about 200° C., about 175° C., about 150° C., about 125° C., about 100° C., about 75° C., about 50° C., or about 25° C.
In a further aspect, a solvent can be provided at a temperature of from about 25° C. to about 300° C., from about 25° C. to about 275° C., from about 25° C. to about 250° C., from about 25° C. to about 225° C., from about 25° C. to about 250° C., from about 25° C. to about 225° C., from about 25° C. to about 200° C., from about 25° C. to about 175° C., from about 25° C. to about 150° C., from about 25° C. to about 125° C., from about 25° C. to about 100° C., from about 200° C. to about 300° C., from about 100° C. to about 200° C., from about 150° C. to about 250° C., or from about 50° C. to about 150° C.
In a yet further aspect, a solvent can be provided at temperature less than room temperature. For example, a solvent can be provided at a temperature of from about 0° C. to about 25° C., from about 5° C. to about 25° C., from about 10° C. to about 25° C., from about 15° C. to about 25° C., from about 0° C. to about 10° C., or of less than about 0° C.
In one aspect, addition of the injection mixture decreases the temperature of the reaction mixture to less than about 300° C., for example, to less than about 270° C., to less than about 250° C., to less than about 225° C., to less than about 200° C., to less than about 175° C., to less than about 150° C., or to less than about 125° C. In a further aspect, addition of the injection mixture decreases the temperature of the reaction mixture to from about 150° C. to about 300° C., from about 150° C. to about 250° C., from about 150° C. to about 200° C., from about 200° C. to about 250° C., or from about 250° C. to about 300° C.
It is understood that both solvent temperature and solvent addition rate can influence the temperature of the combined mixture and, thus the kinetics of nanocrystal initiation and nanocrystal growth. In one aspect, the temperature of the combined mixture is decreased to less than a temperature within a time after adding the solvent to the combined mixture. For example, the temperature can be about 330° C., about 320° C., about 310° C., about 300° C., about 290° C., about 280° C., about 270° C., about 260° C., about 250° C., about 240° C., about 230° C., about 220° C., about 210° C., about 200° C., about 190° C., about 180° C., about 170° C., about 160° C., or about 150° C. For example, the time can be about 90 seconds, about 60 seconds, about 30 seconds, about 20 seconds, about 10 seconds, or about 5 seconds.
It is also understood that external cooling can be used to decrease the temperature of the combined mixture, both in place of and in concert with the cooling effect of the addition of a solvent.
In one aspect, the solvent comprises at least one C1 to C12 alcohol. For example, the alcohol can be methanol, ethanol, propanol, or butanol. The alcohol can be straight-chain or branched and can be substituted or unsubstituted. In a further aspect, mixtures of alcohols can be used. As a further example, the C1 to C12 alcohol can be a diol or a triol. In a further aspect, the solvent comprises at least one C5 to C12 hydrocarbon or C5 to C12 cyclic hydrocarbon or a mixture thereof. The hydrocarbon can be straight-chain or branched and can be substituted or unsubstituted. In a further aspect, mixtures of hydrocarbons can be used. In a further example, the solvent can be an aromatic solvent. For example, the solvent can be at least one of benzene, toluene, or xylene or a mixture thereof. As a further example, halogenated solvents can be used. In a further aspect, toluene can be added to the reaction mixture so as to decrease the temperature of the reaction mixture to less than about 150° C.
It is also understood that the use of temperature control solvents can be absent from the invention.
5. Combined Injection Method
In one aspect, the invention relates to a method of preparing an inorganic nanoparticle comprising the sequential steps of heating a composition comprising a source of cadmium or zinc and a source of selenium, sulfur, or tellurium to a temperature sufficient to initiate nanoparticle formation and sufficient to support nanoparticle growth; cooling the composition to a temperature insufficient to initiate nanoparticle formation but sufficient to support nanoparticle growth; and cooling the composition to a temperature insufficient to initiate nanoparticle formation and insufficient to support nanoparticle growth. In a further aspect, the composition can further comprise at least one of a C4 to C20 trialkyl- or triarylphosphine oxide, a C8 to C20 alkylamine or arylamine, a C8 to C20 alkyl- or arylphosphonic acid, a C2 to C16 trialkyl- or triarylphosphine, or a C6 to C24 hydrocarbon or a mixture thereof. It is understood that the various components, reactants, solvents, temperatures, and conditions of the invention can also be used in connection with the combined injection method to produce the nanoparticles of the invention.
In a further aspect, a temperature sufficient to initiate nanoparticle formation and sufficient to support nanoparticle growth can be from about 250° C. to about 400° C., for example, from about 275° C. to about 350° C., from about 300° C. to about 350° C., from about 325° C. to about 350° C., from about 300° C. to about 375° C., or from about 300° C. to about 400° C. In a further aspect, a temperature insufficient to initiate nanoparticle formation but sufficient to support nanoparticle growth can be from about 150° C. to about 350° C., for example, from about 200° C. to about 300° C., from about 225° C. to about 300° C., from about 250° C. to about 300° C., from about 275° C. to about 300° C., or from about 275° C. to about 325° C. In a further aspect, a temperature insufficient to initiate nanoparticle formation and insufficient to support nanoparticle growth can be from about 100° C. to about 300° C., for example, from about 150° C. to about 250° C., from about 175° C. to about 250° C., from about 200° C. to about 250° C., from about 225° C. to about 250° C., from about 200° C. to about 225° C., from about 175° C. to about 200° C., from about 150° C. to about 200° C., less than about 200° C., less than about 175° C., or less than about 150° C.
In one aspect, the heating step can comprise the steps of heating a reaction mixture to a temperature sufficient to initiate nanoparticle formation and sufficient to support nanoparticle growth, and adding to the reaction mixture an injection mixture comprising a source of cadmium or zinc and a source of selenium, sulfur, or tellurium. In a further aspect, the heating step can comprise the steps of heating a reaction mixture comprising a source of cadmium or zinc to a temperature sufficient to initiate nanoparticle formation and sufficient to support nanoparticle growth, and adding to the reaction mixture an injection mixture comprising a source of selenium, sulfur, or tellurium.
Typically, the magic sized nanocrystals of the invention do not exhibit the strong band edge emission feature that is observed in conventional CdSe nanocrystals, but do exhibit strong band edge absorption features indicative of high quality CdSe nanocrystals. Without wishing to be bound by theory, it is believed that the broad emission can be attributed to charge recombination from surface midgap states that arise from the presence of non-coordinated surface selenium sites. See, e.g., Hill, N. A.; Whaley, K. B. J. Chem. Phys. 1994, 100, 2831-2837. While band edge emission can occur by direct recombination of the electron and hole within a nanocrystal, deep trap emission can occur when a photogenerated hole, trapped in a midgap state, encounters an electron before it can relax non-radiatively to the ground state. See, e.g., Underwood, D. F.; Kippeny, T. C.; Rosenthal, S. J., Journal of Physical Chemistry B 2001, 105, 436-443. That is, without wishing to be bound by theory, it is believed that the observed properties are the direct result of the extreme surface-to-volume ratio forcing the electron and hole to predominately interact at the nanocrystal surface.
This phenomenon of hole trapping to the selenium surface sites has been studied by ultrafast fluorescence upconversion spectroscopy. Underwood, D. F.; Kippeny, T. C.; Rosenthal, S. J., Journal of Physical Chemistry B 2001, 105, 436-443. Typically, as nanocrystal size decreases, the amount of hole trapping increases. Without wishing to be bound by theory, it is believed that this is due not only to the reduced physical distance the hole must travel to reach the surface, but also to an increased surface-to-volume ratio resulting in more available surface sites. Accordingly, as nanocrystal size continues to decrease, an even larger population of photoexcited excitons can be funneled toward the hole-trapping decay pathway, ultimately making it the dominant mode of radiative relaxation. Magic sized nanocrystals are so small that the electron wave function can have significant overlap with the selenium surface sites. Brus, L. E. J. Chem. Phys 1984, 80; Brus, L. J. Phys. Chem. 1986, 90, 2555-2560. Therefore, any hole trapped on the surface would likely encounter the electron before non-radiatively relaxing to the ground state. Underwood, D. F.; Kippeny, T. C.; Rosenthal, S. J. Journal of Physical Chemistry B 2001, 105, 436-443. Compounding this situation, in the present invention, nanocrystal growth time is so short (typically, from about 10 seconds to about 20 seconds) that surface reconstruction and high temperature annealing have little time to occur. Without wishing to be bound by theory, it is believed that this results in a surface that is likely defect-ridden. Furthermore, unlike larger nanocrystals, the diameter of the magic sized nanocrystal and the length of the ligand are quite comparable. Again, without wishing to be bound by theory, it is believed that coupling of vibrational modes of the ligand to surface atoms, as well as collisional relaxation, can provide further avenues for energy dissipation, thereby providing more effective trap sites and potentially contributing to the broad log normal emission line shape.
While deep trap emission can be quite common in small (<30 Å) nanocrystals, it is typically accompanied by a large band edge emission feature. Landes, C. F.; Braun, M.; El-Sayed, M. A. J. Phys. Chem. B 2001, 105, 10554-10558; Murray, C. B.; Norris, D. J.; Bawendi, M. G. J. Am. Chem. Soc. 1993, 115, 8706-8715. In contrast to that observed in the present invention, the presence of a strong band edge feature can bias the white-light emission toward a particular color, thereby reducing the quality of the white light produced. The band edge emission feature of the nanoparticles of the invention is greatly diminished, providing a more balanced white-light emission with chromaticity coordinates of 0.322, 0.365, which fall well within the white region of the 1931 CIE diagram (
In one aspect, the invention relates to a frequency converter. That is, at least one quantum dot of the invention, nanoparticle of any of the invention, plurality of nanoparticles of the invention, or product of the methods of the invention, or mixture thereof, can be dispersed within a matrix, for example a polymeric or glass matrix, and placed within the emission path of an energy source providing light above the band gap energy of the nanoparticle of the invention. Thus, the nanoparticles of the invention can act as frequency downconverters when excited by light above the band gap energy (see
In one aspect, a frequency converter can be constructed by encapsulating at least one nanoparticle of the invention within a polymer matrix (e.g., polyurethane) and positioning the resulting composition within the emission path of an energy source providing light above the band gap energy of the nanoparticle of the invention.
In one aspect, the polymer matrix can comprise any polymer known to those of skill in the art. For example, the polymer matrix can comprise at least one of a polyurethane, a polyacrylate, a polymethacrylate, a polycarbonate, a polyester, a polyamide, a polyimide, a polyether, a polyolefin, a polystyrene, a polythiophene, a polysiloxane, or a polyfluoroethylene, or a mixture thereof, or a copolymer thereof. In one aspect, the polymer is substantially transparent to visible light. In a further aspect, the polymer is substantially transparent to ultraviolet light. In one aspect, the polymer matrix comprises a photocurable polymer. In a further aspect, a condensation polymer is substantially absent from the polymer matrix. It is also understood that the polymer can include additives to modify the physical or chemical properties of the polymer. In one aspect, the polymer matrix can be formed by any method known to those of skill in the art, for example, by solution casting or by injection molding. Further, the polymer matrix can be provided in any desired shape, for example, the polymer matrix can be provided as a film or a lens. Alternatively, the polymer matrix can be formed by performing a polymerization reaction in the presence of at least one nanoparticle of the invention.
In one aspect, the matrix can comprise any glass known to those of skill in the art. For example, the glass matrix can comprise borosilicate glass. In a further aspect, the glass matrix can further comprise at least one additive known to those of skill in the art to modify the physical or optical properties of the glass matrix. In a further aspect, an additive can be selected and included in the glass of the glass matrix such that the additive improves the strength of the glass matrix or such that the additive absorbs particular wavelengths of light emitted by the energy source or the nanoparticles of the invention. For example, the matrix—polymeric or glass—can be supplemented with an additive that is opaque with respect to ultraviolet energy, yet transparent to visible light.
In a further aspect, the frequency converter of the invention can further comprise at least one phosphor, additional quantum dot or mixture thereof. In such aspects, the at least one phosphor, additional quantum dot, or mixture thereof can be selected such that the at least one phosphor, additional quantum dot, or mixture thereof can absorb energy from the energy source providing light above the band gap energy of the nanoparticle of the invention or from the emission of the nanoparticle of the invention and can emit energy of the same or of a different frequency as the nanoparticle of the invention, thereby modifying the emission of the frequency converter. For example, the phosphor can comprise at least one white phosphor or yellow phosphor or a mixture thereof. In such an aspect, the phosphor can absorb energy from the energy source (e.g., UV light) and emit visible light of a frequency intrinsic to the at least one white phosphor or yellow phosphor or a mixture thereof.
In a further aspect, the additional quantum dot can be a quantum dot of other than the nanoparticle of the invention. In such an aspect, the additional quantum dot can absorb energy from the energy source providing light above the band gap energy of the nanoparticle of the invention or from the emission of the nanoparticle of the invention and can emit energy of the same or of a different frequency as the nanoparticle of the invention, thereby modifying the emission of the frequency converter.
In a further aspect, the additional quantum dot can function as an energy cascade system of the invention, as disclosed herein, and is capable of absorbing energy of a wavelength outside the first electromagnetic region and capable of emitting energy in the first electromagnetic region. That is, in such an aspect, the additional quantum dot can absorb energy emitted by the energy source providing light above the band gap energy of the nanoparticle of the invention and can emit energy within the absorption region of the nanoparticle of the invention, thereby increasing the amount of energy for absorption by the nanoparticle of the invention and, therefore, increasing the energy emitted by the frequency converter. For example, the additional quantum dot can be capable of absorbing energy of a wavelength of from about 100 nm to about 290 nm and capable of emitting energy of a wavelength of from about 290 nm to about 400 nm. As another example, the additional quantum dot can be capable of absorbing energy of a wavelength of from about 100 nm to about 320 nm and capable of emitting energy of a wavelength of from about 320 nm to about 400 nm. In one aspect, the additional quantum dot comprises at least one of cadmium sulfide, cadmium selenide, cadmium telluride, zinc selenide, zinc sulfide, or zinc telluride or a mixture thereof. For example, the quantum dot can comprise a single material (e.g., cadmium sulfide), a core/shell or two or more materials (e.g., cadmium sulfide/zinc sulfide), or an alloy of two or more materials.
In one aspect, a light emitting diode device can be provided by using the frequency converter of the invention with an energy source, for example a light emitting diode, capable of providing energy above the band gap energy of the nanoparticle of the invention. That is, the frequency converter can be positioned within the emission path of such, thereby providing a light emitting diode device.
Therefore, in one aspect, the invention relates to a light emitting diode device comprising a light emitting diode (LED) capable of emitting energy of a first wavelength, and the frequency converter of the invention positioned within an emission path of the light emitting diode, wherein the frequency converter is capable of absorbing energy of the first wavelength. In a further aspect, the first wavelength comprises energy within the first electromagnetic region of the nanoparticle of the invention employed in the frequency converter of the invention. For example, the first wavelength can comprise light having a wavelength of from about 200 nm to about 500 nm, of from about 300 nm to about 450 nm, of from about 100 nm to about 290 nm, of from about 290 nm to about 400 nm, of from about 100 nm to about 320 nm, or of from about 320 nm to about 400 nm.
In a further aspect, the light emitting diode device of the invention can further comprise at least one phosphor, additional quantum dot or mixture thereof. In such aspects, the at least one phosphor, additional quantum dot, or mixture thereof can be selected such that the at least one phosphor, additional quantum dot, or mixture thereof can absorb energy from the energy source providing light above the band gap energy of the nanoparticle of the invention or from the emission of the nanoparticle of the invention and can emit energy of the same or of a different frequency as the nanoparticle of the invention, thereby modifying the emission of the light emitting diode device. For example, the phosphor can comprise at least one white phosphor or yellow phosphor or a mixture thereof. In such an aspect, the phosphor can absorb energy from the energy source (e.g., UV light) and emit visible light of a frequency intrinsic to the at least one white phosphor or yellow phosphor or a mixture thereof.
In a further aspect, the additional quantum dot can be a quantum dot of other than the nanoparticle of the invention. In such an aspect, the additional quantum dot can absorb energy from the energy source providing light above the band gap energy of the nanoparticle of the invention or from the emission of the nanoparticle of the invention and can emit energy of the same or of a different frequency as the nanoparticle of the invention, thereby modifying the emission of the light emitting diode device.
In a further aspect, the additional quantum dot can function as an energy cascade system of the invention, as disclosed herein, and is capable of absorbing energy of a wavelength outside the first electromagnetic region and capable of emitting energy in the first electromagnetic region. That is, in such an aspect, the additional quantum dot can absorb energy emitted by the energy source providing light above the band gap energy of the nanoparticle of the invention and can emit energy within the absorption region of the nanoparticle of the invention, thereby increasing the amount of energy for absorption by the nanoparticle of the invention and, therefore, increasing the energy emitted by the light emitting diode device. For example, the additional quantum dot can be capable of absorbing energy of a wavelength of from about 100 nm to about 290 nm and capable of emitting energy of a wavelength of from about 290 nm to about 400 nm. As another example, the additional quantum dot can be capable of absorbing energy of a wavelength of from about 100 nm to about 320 nm and capable of emitting energy of a wavelength of from about 320 nm to about 400 nm. In one aspect, the additional quantum dot comprises at least one of cadmium sulfide, cadmium selenide, cadmium telluride, zinc selenide, zinc sulfide, or zinc telluride or a mixture thereof. For example, the quantum dot can comprise a single material (e.g., cadmium sulfide), a core/shell or two or more materials (e.g., cadmium sulfide/zinc sulfide), or an alloy of two or more materials.
In one aspect, the light emitting diode device can be provided by a method comprising the step of positioning the frequency converter of the invention within an emission path of a light emitting diode (LED) capable of emitting energy of a first wavelength, wherein the frequency converter is capable of absorbing energy of the first wavelength. In a further aspect, the positioning step can comprises the steps of dissolving at least one polymer and dispersing at least one quantum dot of the invention, nanoparticle of any the invention, plurality of nanoparticles of the invention, or product of the invention, or mixture thereof into a solvent, thereby producing a solution-dispersion; applying the solution-dispersion within the emission path of the light emitting diode; and removing the solvent. That is, in one aspect, a light emitting diode device of the invention can be provided by solution-casting a solution-dispersion of the nanoparticle of the invention and a polymer onto at least a portion of the surface of and within the emission path of a light emitting diode (LED).
In a further aspect, the positioning step can comprise the steps of dissolving at least one polymer and dispersing at least one quantum dot of the invention, nanoparticle of the invention, plurality of nanoparticles of any of the invention, or product of the methods of the invention, or mixture thereof into a solvent, wherein the polymer is a photocurable polymer at the first wavelength, thereby producing a photocurable solution-dispersion; contacting the emission path of the light emitting diode with the photocurable solution-dispersion; and energizing the light emitting diode, thereby photocuring at least a portion of the photocurable solution-dispersion. That is, in one aspect, a light emitting diode device of the invention can be provided by photocuring (also referred to as photocrosslinking) a solution-dispersion of the nanoparticle of the invention and a polymer onto at least a portion of the surface of and within the emission path of a light emitting diode (LED). Photocurable polymers are well-known to those of skill in the art, and it is understood that any photocurable polymer can be used in connection with the light emitting diode device of the invention. For example, the photocurable polymer can comprise polybutadiene or a copolymer of polybutadiene. In one aspect, the resulting photocured polymer is substantially transparent to visible light. In a further aspect, the resulting photocured polymer is substantially transparent to ultraviolet light.
In a further aspect, the positioning step can comprise the steps of dissolving at least one monomer and at least one photoactive initiator and dispersing at least one quantum dot of the invention, nanoparticle of the invention, plurality of nanoparticles of the invention, or product of the methods of the invention, or mixture thereof into a solvent, wherein the photoactive initiator is active at the first wavelength and the photoactive initiator can initiate polymerization of the monomer, thereby producing a photopolymerizable solution-dispersion; contacting the emission path of the light emitting diode with the photopolymerizable solution-dispersion; and energizing the light emitting diode, thereby photopolymerizing at least a portion of the monomer dissolved in the photopolymerizable solution-dispersion. That is, in one aspect, a light emitting diode device of the invention can be provided by photopolymerizing a solution-dispersion of the nanoparticle of the invention and a polymer onto at least a portion of the surface of and within the emission path of a light emitting diode (LED). Photoactive initiators and photopolymerizable polymers are well-known to those of skill in the art, and it is understood that any photoactive initiator and/or photopolymerizable polymer can be used in connection with the light emitting diode device of the invention. For example, the photopolymerizable polymer can comprise polymethyl methacrylate initiated by 2,2-dimethoxy-2-phenylacetophenone and 1-hydroxycyclohexylphenyl ketone. In one aspect, the resulting photopolymerizable polymer is substantially transparent to visible light. In a further aspect, the resulting photopolymerizable polymer is substantially transparent to ultraviolet light.
In one aspect, the invention relates to a modified fluorescent light source. That is, a modified fluorescent light source can be provided by substituting the nanoparticle of the invention for the phosphor employed within a conventional fluorescent light source. In such an aspect, a modified fluorescent light source can comprise a substantially optically transparent and substantially hermetically sealed tube having a first end, a second end, an interior surface, an exterior surface, and a lumen extending therethrough; a first electrode positioned at the first end; a second electrode positioned at the second end; inert gas vapor and mercury vapor within the lumen of the tube; a phosphor substitute comprising at least one frequency converter of the invention, quantum dot of the invention, nanoparticle of the invention, plurality of nanoparticles of any of the invention, or product of the methods of the invention, or mixture thereof substantially coating the interior surface or the exterior surface of the tube.
In one aspect, the modified fluorescent light source operates in a manner similar to the operation of a conventional fluorescent light source. For example, by establishing a current between the first electrode positioned at the first end and the second electrode positioned at the second end, a plasma is established from the inert gas vapor and mercury vapor within the lumen of the substantially optically transparent and substantially hermetically sealed tube. In one aspect, the inert gas can comprise any inert gas capable of establishing a plasma under electrical current sustainable under conventional electrical loads; for example, the inert gas can comprise argon gas. As well-known to those of skill in the art, a plasma comprising mercury emits ultraviolet light at a wavelength of 254 nm. In a conventional fluorescent light source, the emitted ultraviolet light excites the phosphor coating at the interior surface of the tube, and the phosphor absorbs the ultraviolet light and then emits visible light at discrete wavelengths (see
In contrast, in one aspect, in the modified fluorescent light source of the invention, the phosphor is replaced or supplemented by the nanoparticle of the invention. That is, the phosphor substitute can be present at the surface of the tube in combination with the phosphor or the phosphor substitute can replace the phosphor. In one aspect, the phosphor is absent from the modified fluorescent light source. In one aspect, the emitted ultraviolet light excites the nanoparticle of the invention coating at the surface(s) of the tube, and the nanoparticle absorbs the ultraviolet light and then emits broad emission visible light (see
In a further aspect, the modified fluorescent light source of the invention can further comprise at least one phosphor, additional quantum dot or mixture thereof. In such aspects, the at least one phosphor, additional quantum dot, or mixture thereof can be selected such that the at least one phosphor, additional quantum dot, or mixture thereof can absorb energy from the mercury emission or from the emission of the nanoparticle of the invention and can emit energy of the same or of a different frequency as the nanoparticle of the invention, thereby modifying the emission of the modified fluorescent light source. For example, the phosphor can comprise at least one white phosphor or yellow phosphor or a mixture thereof. In such an aspect, the phosphor can absorb energy from the mercury emission (e.g., UV light) and emit visible light of a frequency intrinsic to the at least one white phosphor or yellow phosphor or a mixture thereof.
In a further aspect, the additional quantum dot can be a quantum dot of other than the nanoparticle of the invention. In such an aspect, the additional quantum dot can absorb energy from the mercury emission or from the emission of the nanoparticle of the invention and can emit energy of the same or of a different frequency as the nanoparticle of the invention, thereby modifying the emission of the modified fluorescent light source.
In a further aspect, the additional quantum dot can function as an energy cascade system of the invention, as disclosed herein, and is capable of absorbing energy of a wavelength outside the first electromagnetic region and capable of emitting energy in the first electromagnetic region. That is, in such an aspect, the additional quantum dot can absorb energy emitted by the mercury emission and can emit energy within the absorption region of the nanoparticle of the invention, thereby increasing the amount of energy for absorption by the nanoparticle of the invention and, therefore, increasing the energy emitted by the modified fluorescent light source. For example, the additional quantum dot can be capable of absorbing energy of a wavelength of from about 100 nm to about 290 nm and capable of emitting energy of a wavelength of from about 290 nm to about 400 nm. As another example, the additional quantum dot can be capable of absorbing energy of a wavelength of from about 100 nm to about 320 nm and capable of emitting energy of a wavelength of from about 320 nm to about 400 nm. In one aspect, the additional quantum dot comprises at least one of cadmium sulfide, cadmium selenide, cadmium telluride, zinc selenide, zinc sulfide, or zinc telluride or a mixture thereof. For example, the quantum dot can comprise a single material (e.g., cadmium sulfide), a core/shell or two or more materials (e.g., cadmium sulfide/zinc sulfide), or an alloy of two or more materials.
The unique optical properties of the nanoparticles of the invention make them ideal materials for incorporation into solid state lighting applications in the form of light emitting diodes (LEDs). LEDs can be made by incorporating an intrinsic emitting layer into a p-n junction device. When under forward bias, electrons and holes are injected into the intrinsic layer, where they recombine to emit light. Lumileds™: Light From Silicon Valley, Craford, M. G. (2004). The wavelength of the emitted photon is determined by the intrinsic layer or phosphor. Typically, phosphors are limited to monochromatic emission, requiring a mixture of phosphors or a complex doping scheme to achieve white-light. Yang, W.-J.; Luo, L.; Chen, T.-M.; Wang, N.-S. Chem. Mater. 2005, 17, 3883-3888.
An ideal material for a white-light emitting intrinsic layer would be robust, emit over the entire visible spectrum, have high quantum efficiency, not suffer from self absorption, be easy to produce on a large scale, and not waste energy producing wavelengths beyond the visible spectrum (e.g., tungsten). Taking these criteria into consideration, semiconductor nanocrystals, in particular the nanoparticles of the invention, are attractive candidate materials for applications in solid state lighting. Unlike commercial phosphors, emission color can be tuned by simply controlling the nanocrystal size. Further, white-light emission can be provided by employing the nanoparticles of the invention.
Nanocrystal-based LEDs have been demonstrated showing colored-light emission. One example developed by Klimov et al. utilizes core/shell nanocrystals deposited onto an InGaN quantum well. The quantum well is pumped by laser emission, generating electrons and holes which, through energy transfer, cause the nanocrystals to emit light at their fundamental band edge energy. Achermann, M.; Petruska, M. A.; Kos, S.; Smith, D. L.; Koleske, D. D.; Klimov, V. I. Nature 2004, 429, 642-646. While intuitive, simply mixing several colors of nanocrystals together to achieve white light results in an overall reduction of device efficiency through self-absorption between the various sizes of nanocrystals. This can be especially detrimental for device designs requiring a thickness of more than several monolayers. Mueller, A. H.; Petruska, M. A.; Achermann, M.; Werder, D. J.; Akhadov, E. A.; Koleske, D. D.; Hoffbauer, M. A.; Klimov, V. I. Nano Lett. 2005, 5, 1039-1044. The large Stokes shift and narrow size distribution of these ultra-small nanocrystals, along with the broad emission spectrum, would alleviate any efficiency loss attributed to self-absorption from mixing nanocrystal sizes.
In contrast to conventional mixed-nanocrystal-based electroluminescent devices, the nanoparticle of the invention, in one aspect, when used as an intrinsic layer, can provide a broadband emission, thereby providing white light while avoiding an overall reduction of device efficiency through self-absorption between the various sizes of nanocrystals
1. Structure
In one aspect, the electroluminescent device comprises an n-type semiconductor, a p-type semiconductor, and a quantum dot layer in electrical or photonic communication with the n-type semiconductor and the p-type semiconductor, wherein the quantum dot layer comprises at least one quantum dot of the invention, nanoparticle of the invention, plurality of nanoparticles of any of the invention, product of the methods of the invention, or frequency converter of the invention, or mixture thereof (see, e.g., an exemplary electroluminescent device structure in
In a further aspect, the electroluminescent device of the invention can further comprise at least one phosphor, additional quantum dot or mixture thereof. In such aspects, the at least one phosphor, additional quantum dot, or mixture thereof can be selected such that the at least one phosphor, additional quantum dot, or mixture thereof can absorb energy from the light emitted by recombination of electrons and holes injected into the intrinsic layer under forward bias or from the emission of the nanoparticle of the invention and can emit energy of the same or of a different frequency as the nanoparticle of the invention, thereby modifying the emission of the electroluminescent device. For example, the phosphor can comprise at least one white phosphor or yellow phosphor or a mixture thereof. In such an aspect, the phosphor can absorb energy from the light emitted by recombination of electrons and holes injected into the intrinsic layer under forward bias (e.g., UV light) and emit visible light of a frequency intrinsic to the at least one white phosphor or yellow phosphor or a mixture thereof.
In a further aspect, the additional quantum dot can be a quantum dot of other than the nanoparticle of the invention. In such an aspect, the additional quantum dot can absorb energy from the light emitted by recombination of electrons and holes injected into the intrinsic layer under forward bias or from the emission of the nanoparticle of the invention and can emit energy of the same or of a different frequency as the nanoparticle of the invention, thereby modifying the emission of the electroluminescent device.
In a further aspect, the additional quantum dot can function as an energy cascade system of the invention, as disclosed herein, and is capable of absorbing energy of a wavelength outside the first electromagnetic region and capable of emitting energy in the first electromagnetic region. That is, in such an aspect, the additional quantum dot can absorb energy emitted by the light emitted by recombination of electrons and holes injected into the intrinsic layer under forward bias and can emit energy within the absorption region of the nanoparticle of the invention, thereby increasing the amount of energy for absorption by the nanoparticle of the invention and, therefore, increasing the energy emitted by the electroluminescent device. For example, the additional quantum dot can be capable of absorbing energy of a wavelength of from about 100 nm to about 290 nm and capable of emitting energy of a wavelength of from about 290 nm to about 400 nm. As another example, the additional quantum dot can be capable of absorbing energy of a wavelength of from about 100 nm to about 320 nm and capable of emitting energy of a wavelength of from about 320 nm to about 400 nm. In one aspect, the additional quantum dot comprises at least one of cadmium sulfide, cadmium selenide, cadmium telluride, zinc selenide, zinc sulfide, or zinc telluride or a mixture thereof. For example, the quantum dot can comprise a single material (e.g., cadmium sulfide), a core/shell or two or more materials (e.g., cadmium sulfide/zinc sulfide), or an alloy of two or more materials.
2. Device Fabrication
Electroluminescent devices of the invention can be prepared by methods analogous to those reported in the work of Coe et al., who employ a relatively inorganic approach to nanocrystal-based electroluminescent devices (
3. Device Characterization
The properties that can be evaluated for the broad-emission nanocrystal-based LEDs in solid state lighting applications are luminous intensity, luminous efficacy, color temperature, and lifetime. In order to measure these properties, photometric experiments that measure optical radiation as perceived by the human eye can be performed. A photometric quantity can be obtained as follows: P=∫K(λ)R(λ)dλ, where P represents the photometric quantity (e.g., luminous flux in lumens), R represents the corresponding radiometric quantity that can be measured directly (e.g., radiant flux in Watts), and K(λ) represents the visual response of the eye as a function of wavelength. Therefore, photometric experiments can use either a broadband detector with a special photopic filter that is calibrated to mimic the spectral response of the human eye (i.e., photometer) or a photodiode array with associated computer software that takes into account the spectral luminous efficacy of the human eye (i.e., spectroradiometer). Spectroradiometers are more accurate, especially at the edges of the visual response curve.
Traditional light source testing methods are typically insufficient for characterizing LEDs due to the complicated spatial light distribution that is typical for LEDs. Special consideration is taken to avoid large discrepancies in measurements from different metrology laboratories. Therefore, in addition to maintaining a constant temperature environment and drive current, specific geometrical measurement conditions are imposed to ensure reproducibility. The International Commission on Illumination (CIE) sets the standards for characterizing an LED's performance.
A second configuration is necessary to measure the total luminous flux (lm), lifetime, and color. By placing the LED in the center of an integrating sphere, the flux emitted in all directions can be detected. Given the electrical power input to the LED and the measured luminous flux output, the efficiency of the device can be determined. The industry target for luminous efficacy, as specified in the OIDA Solid-State LED Roadmap, is 75 lm/W by 2007 and 200 lm. Light Emitting Diodes (LEDs) for General Illumination: An OIDA Technology Roadmap Update 2002 (http://lighting.sandia.gov/lightingdocs/OIDA_SSL_LED_Roadmap_Full.pdf). For comparison, an incandescent lamp has an efficiency of approximately 16 lm/W, a commercial white light LED operates at approximately 30 lm/W, and a research-grade white light LED has been demonstrated at approximately 80 lm/W for very low drive currents. See http://www.lumileds.com; N. Narendran, Y. Gu, J. P. Freyssinier-Nova, and Y. Zhu, “Extracting phosphor-scattered photons to improve white LED efficiency,” Phys. Stat. Sol. A 202, R60-R62 (2005). Internal quantum efficiency, light extraction efficiency, and phosphor down-conversion efficiency are all contributing factors to luminous efficacy. The lifetime of a solid-state LED, considered to be the 50% lumen depreciation level, can also be determined using the integrating sphere. The target lifetime for solid-state LEDs is greater than 100,000 hours by 2020. Current white light LEDs have lifetimes greater than 50,000 hours. http://www.lumileds.com. If the integrating sphere is coupled with a spectroradiometer, a calculation of the chromaticity coordinates and color temperature can also be accomplished, which specifies the apparent color of the LED when viewed directly. The spectroradiometer performs a complete spectral power distribution of the source being measured from which the colorimetric parameters can be mathematically calculated.
The nanoparticle of the invention typically absorbs energy within a first electromagnetic region and emits energy within a second electromagnetic region. When used in connection with an energy source, the first electromagnetic region of the nanoparticle of the invention can, in one aspect, can comprise wavelengths of energy other than the entire emission region of the energy source. That is, the energy source may emit light at one or more wavelengths outside of the absorbance band of the nanoparticle of the invention. In such aspects, an energy cascade system can be employed to accumulate energy for absorption by the nanoparticle. The resulting system can be termed a cascade of energy collected for use by the longer-wavelength-absorbing nanoparticle or quantum dot. Specifically, in one aspect, a nanocrystal or core/shell nanocrystal, including for example a nanoparticle of the invention, can be used to collect light at very low wavelengths, e.g., 250 nm. The core/shell can then emit light at a higher wavelength (e.g., within a first electromagnetic region), wherein a nanoparticle in the invention can absorb efficiently.
For example, in one aspect, when an energy source emits energy within a first absorption electromagnetic region and the nanoparticle or quantum dot absorbs energy within a second absorption electromagnetic region, wherein the first absorption electromagnetic region and the second absorption electromagnetic region do not wholly overlap, the nanoparticle or quantum dot cannot absorb all available energy emitted by the energy source. In such an aspect, at least two quantum dots in photonic or energetic communication, wherein the first quantum dot is capable of absorbing energy from a first absorption electromagnetic region and capable of emitting energy in a first emission electromagnetic region, wherein the second quantum dot is capable of absorbing energy from a second absorption electromagnetic region and capable of emitting energy in a second emission electromagnetic region, and wherein the first emission electromagnetic region overlaps with the second absorption electromagnetic region can be employed to make a greater amount of energy emitted by the energy source available for absorption by the nanoparticle or quantum dot.
The energy cascade systems of the invention can be used in connection with the nanoparticle of the invention as well as with nanoparticles of other than the invention. That is, in one aspect, the energy cascade system comprises a second quantum dot comprising the quantum dot of the invention, the nanoparticle of the invention, or the product of the methods of the invention. In a further aspect, both the first quantum dot and the second quantum dot are narrow band emission nanocrystals of other than the invention.
In one aspect, the invention relates to an energy cascade system comprising at least two quantum dots in photonic communication, wherein the first quantum dot is capable of absorbing energy from a first absorption electromagnetic region and capable of emitting energy in a first emission electromagnetic region, wherein the second quantum dot is capable of absorbing energy from a second absorption electromagnetic region and capable of emitting energy in a second emission electromagnetic region, and wherein the first emission electromagnetic region overlaps with the second absorption electromagnetic region.
In a further aspect, the first absorption electromagnetic region comprises wavelengths of from about 100 nm to about 290 nm and the first emission electromagnetic region comprises wavelengths of from about 290 nm to about 400 nm. In a yet further aspect, the first absorption electromagnetic region comprises wavelengths of from about 100 nm to about 320 nm and the first emission electromagnetic region comprises wavelengths of from about 320 nm to about 400 nm. In a still further aspect, the second absorption electromagnetic region comprises wavelengths of from about 290 nm to about 400 nm or from about 320 nm to about 400 nm. In one aspect, the second emission electromagnetic region comprises wavelengths of from about 400 nm to about 700 nm or from about 420 nm to about 710 nm.
In one aspect, the first quantum dot comprises at least one of cadmium sulfide, cadmium selenide, cadmium telluride, zinc selenide, zinc sulfide, or zinc telluride or a mixture thereof. For example, the quantum dot can comprise a single material (e.g., cadmium sulfide), a core/shell or two or more materials (e.g., cadmium sulfide/zinc sulfide), or an alloy of two or more materials.
In one aspect, the second quantum dot comprises the nanoparticle of the invention or at least one of cadmium sulfide, cadmium selenide, cadmium telluride, zinc selenide, zinc sulfide, or zinc telluride or a mixture thereof. For example, the quantum dot can comprise a single material (e.g., cadmium sulfide), a core/shell or two or more materials (e.g., cadmium sulfide/zinc sulfide), or an alloy of two or more materials.
Solid state lighting, in the form of white light emitting diodes (LEDs), is an attractive replacement for current lighting technologies based on their potential for longer service lifetimes and lower power consumption. [The Promise of Solid State Lighting for General Illumination, Optoelectronics Industry Development Association, Washington, D.C., 2001.] This requires an LED that emits white light which is pleasing to the eye, similar to the output from incandescent light bulbs or sunlight. Most current white-light LEDs emit a harsh white color similar to fluorescent lights. The quality of the emitted white light can be evaluated by quantities such as CIE chromaticity coordinates, color rendering index (CRI), and correlated color temperature (CCT). Each of these measures is important for characterizing the unique properties of white-light LEDs. The CIE chromaticity coordinates (x, y) allow specification of the exact color of the emission as perceived by the human eye, where (0.33, 0.33) is the ideal value for white light. Color rendering index is a measure of the ability of a source to reproduce the colors of a variety of objects that it illuminates, presented on a scale of 0 to 100, representing the worst (0) and best (100) color rendering. Correlated color temperature is a measure of the temperature in degrees Kelvin where a blackbody radiator best matches the emission spectrum of the tested light source. Ideal CCT values for white-light LEDs range from warmer white (2500 K to 4500 K) to cooler white (4500 K to 6500 K). [D'Andrade, B. W.; Forrest, S. R. “White Organic Light-Emitting Devices for Solid-State Lighting.” Adv. Mater. 16, 1585-1595, 2004.] The values for each of these quantities are given for common white-light sources in Table 1.
A 2001 Department of Energy study found that transitioning to solid state lighting, such as using white-light LEDs, would reduce carbon dioxide emission by 258 million metric tons and eliminate the need for over 100 new power stations over a 20 year period. [The Promise of Solid State Lighting for General Illumination, Optoelectronics Industry Development Association, Washington, D.C., 2001.] Generally, the goal is to decrease the global electricity usage for lighting by 50% while at the same time provide higher quality lighting. Over the same 20 year period, this could save 760 GW of energy in the U.S. alone, which would result in a financial savings of over $115 billion dollars.
TABLE 1
CIE coordinates, CRI, and CCT for common white-light sources.
[D'Andrade, B. W.; Forrest, S. R. “White Organic Light-Emitting
Devices for Solid-State Lighting.” Adv. Mater. 16, 1585-1595,
2004.] The Inova commercial white-light LED was measured in
a Labsphere SLMS-LED-1050 integrating sphere system.
White-Light Source
CIE x
CIE y
CRI
CCT (K)
Incandescent Bulb
0.448
0.408
100
2854
Fluorescent, cool white
0.375
0.367
89
4080
Fluorescent, warm white
0.440
0.403
72
2940
Daylight (CIE Standard Illuminant D65)
0.313
0.329
90
6500
Inova commercial white-light LED
0.308
0.300
76
7137
1. White-Light LEDs
A current problem with transitioning to solid state lighting is the lack of an efficient LED that is easy to manufacture and possesses sufficient color properties for general lighting. Several approaches have been reported toward the development of a viable solid state white-light LED. One technique utilizes a blue light-emitting InGaN LED coated with cerium-doped yttrium aluminum garnet (Ce3+:YAG) crystals, which function as a yellow phosphor. [Tamura, T.; Setomoto, T.; Taguchi, T. “Illumination characteristics of lighting array using 10 candela-class white LEDs under AC 100 V operation.” Journal of Luminescence 87-89, 1180-1182, 2000.; Schlotter, P., et al., “Fabrication and characterization of GaN:InGaN:AlGaN double heterostructure LEDs and their application in luminescence conversion LEDs.” Mat. Sci. and Eng. B 59, 390-394, 1999.] The crystals convert some of the blue LED light to yellow light, creating a mixture of yellow and blue light that gives the appearance of white light. This light is considered to be cool white because it has a color temperature of about 5000 K. The lack of emission in the red region of the spectrum results in an inferior white light compared to incandescent bulbs, which is a significant obstacle to overcome before achieving the transition to solid state lighting. In order to enable a more tunable form of white light, a combination of red, green, and blue phosphors can be pumped with a UV LED. [Steigerwald, D. A., et al., “Illumination With Solid State Lighting Technology.” IEEE J. on Sel. Top. in Quant. Elec. 8, 310-320, 2002.; Sheu, J. K., et al., “White-Light Emission From Near UV InGaN—GaN LED Chip Precoated With Blue/Green/Red Phosphors.” IEEE Photonics Technology Letters 15, 18-20, 2003.] However, by using three phosphors instead of one, the complexity of fabricating these devices is greatly increased.
White-light LEDs have also been demonstrated without the use of phosphors by growing homoepitaxial zinc selenide (ZnSe) on a ZnSe substrate. Some of the greenish-blue light (485 nm) from the active region of the p-n junction is absorbed by the substrate and re-emitted as yellow light (centered on 585 nm) via self-activated emission, resulting from distant donor-acceptor pair transitions. [Katayama, K., et al., “ZnSe-based white LEDs.” Journal of Crystal Growth 214/215, 1064-1070, 2000.; Shirakawa, T. “Effect of defects on the degradation of ZnSe-based white LEDs.” Mater. Sci. and Eng. B 91-92, 470-475, 2002.; Thomas, A. E.; Russell, G. J.; Woods, J. “Self-activated emission in ZnS and ZnSe.” J. Phys. C: Solid State Phys. 17, 6219-6228, 1984.] However, the color rendering of these devices is poor due to a CRI of 68, which is not high enough for general room illumination. White-light LEDs have also been fabricated with higher color rendering by using separate red, green, and blue LEDs to produce white light with a CRI greater than 80. [Muthu, S.; Schuurmans, F. J.; Pashley, M. D. “Red, Green, and Blue LEDs for White Light Illumination.” IEEE J. on Sel. Top. In Quant. Elec. 8, 333-338, 2002.; Chhajed, S.; Xi, Y.; Li, Y.-L.; Gessmann, Th.; Schubert, E. F. “Influence of junction temperature on chromaticity and color-rendering properties of trichromatic white-light sources based on light-emitting diodes.” J. of Appl. Phy. 97, 054506, 2005.] However, these devices are expensive and complex to produce because of the complicated feedback system that is necessary to maintain the proper color balance as the red, green, and blue LEDs degrade at different rates over time.
2. CdSe Nanocrystal-Based LEDs
For more than a decade, monochromatic light emitting diodes have been fabricated using CdSe nanocrystals as the emitting layer of the device. Electrons are injected into the nanocrystal layer while holes are injected into a layer of a semiconducting polymer such as p-paraphenylene vinylene (PPV) or polyvinylcarbazole (PVK), resulting in light emission from both the polymer and the CdSe layer. [Colvin, V. L.; Schlamp, M. C.; Alivisatos, A. P. “Light-emitting diodes made from cadmium selenide nanocrystals and a semiconducting polymer.” Nature 370, 354-357, 1994.; Dabbousi, B. O.; Bawendi, M. G.; Onitsuka, O.; Rubner, M. F. “Electroluminescence from CdSe quantum-dot/polymer composites.” Appl. Phys. Lett. 66, 1316-1318, 1995.; Schlamp, M. C.; Peng, X.; Alivisatos, A. P. “Improved efficiencies in light emitting diodes made with CdSe.CdS.core/shell type nanocrystals and a semiconducting polymer.” J. of Appl. Phys. 82, 5837-5842, 1997.; Mattoussi, H., et al., “Electroluminescence from heterostructures of poly(phenylene vinylene) and inorganic CdSe nanocrystals.” J. of Appl. Phys. 83, 7965-7974, 1998.; Mattoussi, H., et al., “Composite thin films of CdSe nanocrystals and a surface passivating/electron transporting block copolymer: Correlations between film microstructure by transmission electron microscopy and electroluminescence.” J. of Appl. Phys. 86, 4390-4399, 1999.] Because of the poor charge conduction in CdSe nanocrystal layers, utilizing a single monolayer of CdSe nanocrystals has been shown to increase the external electroluminescence quantum efficiency of these devices from <0.01% to 1.1%. [Coe, S.; Woo, W.-K.; Bawendi, M.; Bulović, V. L. “Electroluminescence from single monolayers of nanocrystals in molecular organic devices.” Nature 420, 800-803, 2002.; Coe-Sullivan, S.; Woo, W.-K.; Steckel, J. S.; Bawendi, M. G.; Bulović, V. L. “Tuning the performance of hybrid organic/inorganic quantum dot light-emitting devices.” Org. Electron. 4, 123-130, 2003.] Recently, a new charge conduction mechanism has been demonstrated where CdSe nanocrystals are deposited onto an InGaN quantum well and electron-hole pairs are indirectly injected into the nanocrystals, resulting in an energy transfer and band edge emission by the nanocrystals. [Achermann, M.; Petruska, M. A.; Kos, S.; Smith, D. L.; Koleske, D. D.; Klimov, V. I. “Energy-transfer pumping of semiconductor nanocrystals using an epitaxial quantum well.” Nature 429, 642-646, 2004.] In addition, CdSe nanocrystals have been used as the intrinsic layer of an all-inorganic LED when surrounded by n- and p-doped GaN to inject electrons and holes directly, avoiding the low carrier mobilities of organic materials. [Mueller, A. H. et al. “Multicolor Light-Emitting Diodes Based on Semiconductor Nanocrystals Encapsulated in GaN Charge Injection Layers.” Nano Lett. 5, 1039-1044, 2005.]
3. White-Light Emitting CdSe Nanocrystals
Current white-light, nanocrystal-based devices rely on either a combination of nanocrystal and polymer emission or the mixing of several sizes of nanocrystals to achieve white light. It has been widely published that the color of the light emitted depends on the size of the nanocrystal. For example, CdSe nanocrystals with a diameter of 7 nm emit red light while CdSe nanocrystals with a diameter of 2 nm emit blue light. [Murray, C. B., Norris, D. J., Bawendi, M. G. “Synthesis and Characterization of Nearly Monodisperse CdE (E=S, Se, Te) Semiconductor Nanocrystallites.” J. Am. Chem. Soc. 115, 8706-8715, 1993.; Alivisatos, A. P. “Semiconductor Clusters, Nanocrystals, and Quantum Dots.” Science 271, 933-937, 1996.] The efficiency of white-light LEDs based on several sizes of nanocrystals is compromised due to the overlap of the emission and absorption spectra of the different size nanocrystals. The present approach to achieving high quality white-light LEDs that can be fabricated at low cost involves the use of white-light emitting CdSe nanocrystals that are a single “magic size” and exhibit broadband emission from 420-710 nm when illuminated with UV light, as seen in
In one aspect, the invention relates to a broad emission LED comprising at least one nanocrystal of the invention encapsulated within a polymer, for example, a polymer as disclosed herein, including but not limited to a perfluorocyclobutyl (PFCB) polymer. In various aspects, LEDs comprising the nanocrystals of the invention can emit produce white light from 420-710 nm.
4. Advantages of White-Light Nanocrystal-Based Devices
Single, magic-size CdSe nanocrystals, in one aspect, have a large Stokes shift separating the absorption and emission peaks. Consequently, devices based on these nanocrystals will not suffer from self-absorption, potentially resulting in higher device efficiency. Another advantage is that magic-sized CdSe nanocrystal white-light LEDs would not require a mixture of phosphors or a complex feedback system to generate white light, resulting in much simpler devices. Furthermore, the addition of emission in the red portion of the spectrum gives higher color rendering than in devices emitting mostly blue and yellow light, such as the blue LED with yellow phosphor and the ZnSe-based devices. Encapsulating magic-sized CdSe nanocrystals coated onto UV LEDs act as frequency downconverters to produce white light from 420-710 nm.
In the preparation of LEDs, the choice of encapsulant can play a role in the white-light emission spectrum. In the examples, the highest quality white-light spectra were observed when the magic-sized CdSe nanocrystals are dispersed into PFCB polymer. Increasing the concentration of nanocrystals in PFCB typically results in the emission color changing from a cooler white to a warmer white. Furthermore, varying the wavelength of the LED used to excite the samples can have a small effect on the emission spectrum of the nanocrystals, with longer wavelengths LEDs causing a shift towards a cooler white color. Using a 385 nm LED to excite 2% CdSe nanocrystals in PFCB, chromaticity coordinates of (0.33, 0.30), CRI of 79, a color temperature of 5406 K, and luminous efficacy slightly below 0.5 lm/W have been measured. Incorporation of magic-sized nanocrystals into an electroluminescent device can lead to higher quality and more economical solid state lighting devices.
The following examples are put forth so as to provide those of ordinary skill in the art with a complete disclosure and description of how the compounds, compositions, articles, devices and/or methods claimed herein are made and evaluated, and are intended to be purely exemplary of the invention and are not intended to limit the scope of what the inventors regard as their invention. Efforts have been made to ensure accuracy with respect to numbers (e.g., amounts, temperature, etc.), but some errors and deviations should be accounted for. Unless indicated otherwise, parts are parts by weight, temperature is in ° C. or is at ambient temperature, and pressure is at or near atmospheric.
1. Synthesis of Ultra-Small Cadmium Selenide Nanocrystals
a. Reagents
Tri-n-octylphosphine oxide (TOPO, 90% tech. grade), hexadecylamine (HDA, 90% technical grade) and octadecene (ODE, 90% technical grade) were purchased from Aldrich and used as received. CdO (99.999% Puratrem), tri-n-butylphosphine (TBP, 97%), and selenium powder (200 mesh) were purchased from Strem and used as received. Dodecylphosphonic acid (DPA) was synthesized via the Arbuzov reaction from triethylphosphite and 1-dodecylbromide followed by acid work up with concentrated HCl and recrystallization from cold ethyl acetate. [Maege, I.; Jaehne, E.; Henke, A.; Adler, H.-J. P.; Bram, C.; Jung, C.; Stratmann, M. “Self-assembling adhesion promoters for corrosion resistant metal polymer interfaces.” Progress in Organic Coatings 34, 1-12, 1998.] All other solvents used were HPLC grade and purchased from Fisher Scientific, unless otherwise noted.
b. Procedure 1
A 1.0 M solution of selenium in TBP was produced by dissolving 7.896 g selenium powder in 100 mL of TBP. The 0.10 M injection mixture was made by dilution of the 1.0 M Se:TBP solution with ODE. This solution was stable for several days stored in a capped bottle, in ambient conditions at room temperature. The reaction solvent was mixed from a unit quantity of TOPO and HDA (7.2 g and 2.97 g respectively) along with 0.128 g of CdO and 0.496 g of DPA (scaled as necessary). These contents were heated in a 100 mL three neck flask under argon with vigorous stirring to 310° C. A needle was placed in the septum to allow for an argon purge until the reaction mixture reached 150° C., at which point the reaction vessel was considered water- and oxygen-free. Upon reaching reaction temperature (330° C.), 5 mL of the Se:TBP:ODE solution were swiftly injected and the temperature reduced to 270° C. as quickly as was possible without allowing the temperature to drop below 260° C. To achieve ultra-small nanocrystals (e.g., <20 Å), a second syringe of toluene (typically 5 mL) was injected to reduce the reaction temperature to <150° C. within about 2 to about 10 seconds after the initial injection.
c. Procedure 2
As before, a 0.10 M injection mixture of selenium in TBP was produced by dissolving 7.896 g selenium powder in 100 mL of TBP and dilution of the 1.0 M Se:TBP solution with ODE. The reaction mixture was prepared from 2.97 g of HDA and 0.128 g of CdO and 0.496 g of DPA (scaled as necessary). These contents were heated in a 100 mL three neck flask under argon with vigorous stirring to 330° C., until the solution became colorless. The mixture was then purged with argon and cooled to approximately room temperature (i.e., about 25° C.). Then, 7.2 g of TOPO was added to the reaction mixture, which was then heated to reaction temperature (e.g., about 330° C.).
At reaction temperature, 5 mL of the Se:TBP:ODE injection mixture were injected and the temperature reduced to 270° C. as quickly as was possible without allowing the temperature to drop below 260° C. To achieve ultra-small nanocrystals (e.g., <20 Å), a second syringe of toluene (typically 5 mL) was injected to reduce the reaction temperature to <150° C. within about 2 to about 10 seconds after the initial injection.
d. Characterization
2. Preparation of Nanocrystals by Etching (Comparative)
A solution of 456 nm absorbing CdSe nanocrystals in toluene was mixed with butylamine. The final butylamine concentration was approximately 0.9M. The etching process was carried out at room temperature over four days. The absorption and emission spectra were collected once the primary absorption peak had reached 414 nm. The spectrum of the resulting nanocrystals is shown in
3. Ultra-Small Cadmium Selenide Nanocrystals Having Improved Quantum Yield
a. Reagents
Tri-n-octylphosphine oxide (TOPO, 90% tech. grade), hexadecylamine (HDA 90% tech. grade) and octadecene (ODE, 90% tech. grade) were purchased from Aldrich and used as received. CdO (99.999% Puratrem), tri-n-butylphosphine (TBP, 97%), and selenium powder (200 mesh) were purchased from Strem and used as received. Dodecylphosphonic acid (DPA) was synthesized via the Abruzov reaction from triethylphosphite and 1-dodecylbromide followed by acid work up with concentrated HCl and recrystallization from cold ethyl acetate. All other solvents were HPLC grade and purchased from Fisher Scientific unless otherwise noted.
b. Synthesis
A 1.0 M solution of selenium in TBP was produced by dissolving 7.896 g selenium powder in 100 mL of TBP. The 0.20 M injection solution was made by dilution of the 1.0 M Se:TBP solution with TBP. This solution was stable for several days stored in a sealed bottle, in ambient conditions at room temperature. The reaction solvent was mixed from a unit quantity of TOPO and HDA (7.0 g and 3.0 g respectively) along with 0.128 g of CdO and 0.496 g of DPA. These contents were heated in a 100 mL three neck flask under argon with vigorous stirring to 330° C. A needle was placed in the septum to allow for an argon purge until the reaction solution reached 150° C. at which point the reaction vessel was considered water and oxygen free. Upon reaching reaction temperature (330° C.), the reaction continued stirring until the red color from the CdO disappeared. The temperature was then reduced to 315° C. and the heating mantle was removed. 4.5 mL of the 0.2 M Se:TBP along with 2 mL ODE were swiftly injected. A second syringe of butanol (typically 10 mL) was injected to reduce the reaction temperature to <150° C. within 2-10 seconds after the initial injection. Time is determined by the observed color of the reaction vessel. That is, for example, the alcohol solution can be added at the first appearance of a yellow color in the solution. This addition, in one aspect, can also have the effect of precipitating the nanocrystals. This reaction may be scaled to produce larger or smaller quantities.
c. Isolation
Nanocrystals are divided into equally into two 11 dram vials. The vials are filled to the top with methanol and centrifuged. The liquid is discarded and a small amount of hexyl alcohol is added the vial and then centrifuged again. The nanocrystals are removed by the hexyl alcohol leaving behind the excess HDA. The liquid is poured into two clean 11 dram vials and the nanocrystals are precipitated by addition of methanol and collected by centrifugation. The solvent is discarded and the nanocrystals are re-dissolved in the non-polar solvent of choice (toluene, hexanes, chloroform, etc.).
d. Characterization
The nanocrystals of this example exhibit a broad emission spectrum. An exemplary spectrum is shown as
e. Quantum Yield
Nanocrystals produced in this example exhibit average quantum yields (i.e., light in to light out ratios) of at least 10%. That is, in this example, nanocrystals produced by the methods of the invention can have a quantum yield of greater than about 10%.
4. Encapsulation
a. Nanocrystal Synthesis
A 1.0 M stock solution of selenium in TBP was produced by dissolving 11.84 g selenium powder in 150 mL of TBP. The injection solution was produced by further diluting a 0.2 M Se:TBP solution with TBP. This solution was stable for several days stored in a capped bottle, under nitrogen or argon at room temperature. The reaction solvent was mixed from a unit quantity of TOPO and HDA (7.0 g and 3.0 g respectively) along with 0.128 g of CdO and 0.496 g of DPA (scaled as necessary). These chemicals were placed in a 100 mL three neck flask, with a temperature probe, a bump trap, and a septum in the three necks. A needle was placed in the septum to allow for an argon purge until the reaction solution reached 150° C., at which point the reaction vessel was considered water and oxygen free.
The reaction continued to be heated under argon with vigorous stirring up to 320° C. Upon reaching reaction temperature, 4.25 mL of the 0.2 M Se:TBP solution along with 2.00 mL of ODE solution were mixed in a syringe and swiftly injected. Following this injection the temperature of the reaction flask was maintained between 270° C. and 240° C. To achieve ultra-small nanocrystals (e.g., <20 Å), a second syringe of butanol (typically 10 mL) was injected to reduce the reaction temperature to <130° C. within 2-10 seconds after the initial injection (depending on the desired size). Further cooling using compressed air, applied to the outside of the reaction flask, cooled the solution to <100° C. The nanocrystals were then removed from the coordinating solvents using methanol and hexanol washes, before being suspended in toluene.
b. Sample Preparation
A range of different encapsulant materials were chosen based on their ability to add phosphor materials to them before curing and on their color after curing, preferably clear. The encapsulants were prepared according to the instructions provided using the following materials: Easy Cast clear casting epoxy (Environmental Technology Inc.), RTVS 61 clear silicone (Insulcast), Epo-Tek epoxy resin (Epoxy Technology), perfluorocyclobutyl (PFCB) polymer (Tetramer Technologies), EP 691 clear epoxy resin (Resinlab), and EP 965 clear epoxy resin (Resinlab). Other materials were tested but are not listed due to incomplete mixing with the nanocrystal solution or insufficient hardening at room temperature after addition of the nanocrystals. The CdSe nanocrystals were added while in solution (toluene) and mixed thoroughly before the encapsulant was cured. Aggregation was monitored via fluorescence microscopy, where the emitted white light blinking on and off from a thin film of nanocrystals in the encapsulant was observed. This on/off or intermittency behavior is based on an Auger ionization process and is only seen in single nanocrystal emission, indicating little or no aggregation. [Nirmal, M.; Dabbousi, B. O.; Bawendi, M. G.; Macklin, J. J.; Trautman, J. K.; Harris, T. D.; Brus, L. E. “Fluorescence intermittency in single cadmium selenide nanocrystals.” Nature 383, 802-804, 1996.; Blanton, S. A.; Hines, M. A.; Guyot-Sionnest, P. “Photoluminescence wandering in single CdSe nanocrystals.” Appl. Phys. Lett. 69, 3905-3907, 1996.]
For curing, vials of samples were placed inside a lab oven at 65-100° C. for 3-24 hours depending on the curing schedule of the encapsulant. After hardening, the samples were removed from the oven and left to cool to room temperature before testing. If the encapsulant material did not adhere to the glass vial, the sample was removed from the vial before testing. However, if the encapsulant did adhere to the glass, the sample was tested while still inside the vial. The Easy Cast, RTVS 61, Epo-Tek samples were tested after being removed from the vial, while the PFCB, EP 691, and EP 965 samples were tested in the vial.
c. Sample Testing
Absorption and photoluminescence were recorded for all samples. The UV-V is absorbance measurements were performed in air using a Varian Cary Bio 100 UV-Vis spectrophotometer. Photoluminescence measurements were carried out using either a spectrofluoremeter or an integrating sphere with a fiber-coupled spectrometer. Multiple excitation sources were used for the photoluminescence measurements, including a 300 W high-pressure xenon arc lamp with monochromator, and UV or blue LEDs in wavelengths of 365, 375, 385, 395, 405, 410, and 423 nm (Roithner LaserTechnik). The LEDs were powered at 20 mA and 4 V using a Keithley 2400 sourcemeter.
The first photoluminescence apparatus utilized an ISS PC1 photon counting spectrofluoremeter in air. The nanocrystals in solution were excited by the xenon white-light source using a monochromator. The samples of nanocrystals in encapsulant were excited using commercial UV and blue LEDs. Images of the LEDs and then the samples on top of the LEDs can be seen in
Though many encapsulant materials were tested, the polymer PFCB typically performed the best due to the high UV absorption by the samples with CdSe nanocrystals at low thicknesses (several millimeters). To achieve this same level of absorption in other materials, most needed to be several centimeters thick, which is much larger than is typically acceptable for a commercial product. Ideally, either a very thin coating of the encapsulant with nanocrystals would be applied to the outside of a commercial UV LED, or the nanocrystals in the encapsulant would replace the commercial clear epoxy bulb and encase a UV LED die. In either case, it is typically desirable to have as little as possible UV light leak out of the device. In addition to the high absorbance, the nanocrystals mixed thoroughly and easily in PFCB while curing in a matter of hours. Based on its better performance than the other encapsulants, the data will be presented only for PFCB samples.
d. Absorption
e. Photoluminescence
The color characteristics of CIE coordinates, CRI, and CCT as well as the luminous efficacy for the PFCB with nanocrystal samples are reported in Table 2. The luminous efficacy is calculated as total luminous flux divided by the electrical power used to light the UV LEDs, in lm/W. The 1% and 2% concentration of nanocrystals in PFCB had CIE coordinates of (0.289, 0.260) and (0.328, 0.296) respectively when illuminated with 385 nm LEDs, as seen in Table 2, which are within the white-light range and are similar to the other samples since the nanocrystals alone in solution have coordinates of (0.322, 0.365). [Bowers, M. J., II; McBride, J. R.; Rosenthal, S. J. “White-Light Emission from Magic-Sized Cadmium Selenide Nanocrystals.” J. Am. Chem. Soc. 127, 15378-15379, 2005.] The CRI and CCT were typically about 80 and 3500-5000 K, respectively, and are also in the ideal range for white-light LEDs. [Steigerwald, D. A., et al., “Illumination With Solid State Lighting Technology.” IEEE J. on Sel. Top. in Quant. Elec. 8, 310-320, 2002.] The luminous efficacy of the exemplary devices is under 1 lm/W, which is partly due to the low quantum yield (10%) of the white-light nanocrystals. This yield is typically lower than the single-color CdSe nanocrystal emission quantum yield.
TABLE 2
CIE coordinates, CRI, and CCT for 1%, 2%, 5%, and 10%
by weight magic-sized CdSe nanocrystals in PFCB when
excited with three 365 nm, 375 nm, or 385 nm LEDs.
Luminous
Concen-
CCT
Efficacy
LED
tration
CIE x
CIE y
CRI
(K)
(lm/W)
365
1%
0.3566
0.4234
71.4
4779
0.05
nm
2%
0.3759
0.4143
78.1
4299
0.05
5%
0.4167
0.4896
66.7
3881
0.04
10%
0.4412
0.4993
60.4
3549
0.03
375
1%
0.3390
0.3817
81.2
5065
0.29
nm
2%
0.3855
0.4156
81.0
4029
0.29
5%
0.4217
0.4499
78.2
3559
0.27
10%
0.4377
0.4565
78.5
3346
0.25
385
1%
0.2886
0.2603
76.1
9497
0.49
nm
2%
0.3277
0.2955
79.0
5406
0.46
5%
0.3634
0.3407
80.5
4139
0.43
10%
0.3920
0.3675
81.1
3554
0.41
Initial results indicate that the excitation wavelength had a small effect on the emission properties of the devices. As the peak wavelength of the LED increased, more blue light was emitted by the LED, resulting in a cooler white color. This trend can be seen in Table 2, with higher color temperatures resulting from excitation with longer wavelength LEDs. In contrast, an increase in the concentration of nanocrystals in PFCB caused a small decrease in the amount of blue emission from the device, partly due to self absorption of the nanocrystals. This resulted in a warmer white color or lower color temperature at higher concentrations of nanocrystals in PFCB, also seen in Table 2. The luminous efficacy of the devices was similarly affected by these same factors. The level of UV light absorbance by the samples varies with wavelength as shown in
It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the scope or spirit of the invention. Other embodiments of the invention will be apparent to those skilled in the art from consideration of the specification and practice of the invention disclosed herein. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the invention being indicated by the following claims.
Bowers, Michael J., McBride, James R., Rosenthal, Sandra J.
| Patent | Priority | Assignee | Title |
| 10330614, | Apr 28 2015 | Bowling Green State University | Methods and systems for testing luminescent semiconductors |
| Patent | Priority | Assignee | Title |
| 6552255, | Sep 03 1998 | CLEMSON UNIVERSTIY | Thermoelectric composition |
| 6569249, | Apr 18 2000 | Clemson University | Process for forming layers on substrates |
| 6649715, | Jun 27 2000 | Clemson University | Fluoropolymers and methods of applying fluoropolymers in molding processes |
| 6674560, | Aug 03 2001 | Transpacific Systems, LLC | Optical lens of optical scanner |
| 6689855, | Jun 27 2000 | Clemson University | Diffraction devices and methods |
| 6696534, | Jun 27 2000 | Clemson University | Random copolymer compositions |
| 6803718, | Oct 25 2002 | RiTdisplay Corporation | Organic electroluminescent display device and method for packaging the same |
| 6953653, | Aug 30 2001 | Clemson University | Fluoropolymer compositions, optical devices, and methods for fabricating optical devices |
| 7060252, | Feb 18 2000 | Life Technologies Corporation | Functionalized encapsulated fluorescent nanocrystals |
| 7122842, | Sep 08 2003 | KIRSTEEN MGMT GROUP LLC | Solid state white light emitter and display using same |
| 7342260, | Dec 26 2003 | Industrial Technology Research Institute | Light emitting diode |
| 7468168, | May 28 2004 | SAMSUNG ELECTRONICS CO , LTD | Method of preparing cadmium sulfide nanocrystals emitting light at multiple wavelengths, and cadmium sulfide nanocrystals prepared by the method |
| 7535029, | Sep 19 2000 | Lawrence Livermore National Security, LLC | Material system for tailorable white light emission and method for making thereof |
| 7554109, | Sep 05 2003 | DOT METRICS TECHNOLOGY, INC | Quantum dot optoelectronic devices with nanoscale epitaxial lateral overgrowth and methods of manufacture |
| 7658905, | May 28 2004 | Samsung Electronics Co., Ltd. | Method of preparing cadmium sulfide nanocrystals emitting light at multiple wavelengths, and cadmium sulfide nanocrystals prepared by the method |
| 7678359, | Oct 05 2007 | Industrial Technology Research Institute | Preparation method of white light quantum dot |
| 7850943, | May 28 2004 | SAMSUNG ELECTRONICS CO , LTD | Method of preparing cadmium sulfide nanocrystals emitting light at multiple wavelengths, and cadmium sulfide nanocrystals prepared by the method |
| 7862796, | May 28 2004 | Samsung Electronics Co., Ltd. | Method of preparing cadmium sulfide nanocrystals emitting light at multiple wavelengths, and cadmium sulfide nanocrystals prepared by the method |
| 8337721, | Dec 02 2005 | Vanderbilt University | Broad-emission nanocrystals and methods of making and using same |
| 20030050027, | |||
| 20030050068, | |||
| 20040002490, | |||
| 20040038392, | |||
| 20040203311, | |||
| 20040219434, | |||
| 20040259363, | |||
| 20050042465, | |||
| 20050051777, | |||
| 20050139852, | |||
| 20060062720, | |||
| 20070170418, | |||
| 20080219434, | |||
| 20080311029, | |||
| 20090239074, | |||
| 20090267050, | |||
| 20090269868, | |||
| 20110223425, | |||
| AU2004271599, | |||
| CA2538276, | |||
| CN100446279, | |||
| CN1595670, | |||
| CN1658404, | |||
| CN1849713, | |||
| CN1894799, | |||
| EP1665396, | |||
| EP1704596, | |||
| IN2006DN00960, | |||
| JP2007505479, | |||
| JP2007534146, | |||
| KR2005112939, | |||
| KR20070030723, | |||
| TW236162, | |||
| WO200401059, | |||
| WO2004028689, | |||
| WO2005024952, | |||
| WO2005024960, |
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