Methods and structures are described to reduce metallic redeposition material in the memory cells, such as MTJ cells, during pillar etching. One embodiment forms metal studs on top of the landing pads in a dielectric layer that otherwise covers the exposed metal surfaces on the wafer. Another embodiment patterns the MTJ and bottom electrode separately. The bottom electrode mask then covers metal under the bottom electrode. Another embodiment divides the pillar etching process into two phases. The first phase etches down to the lower magnetic layer, then the sidewalls of the barrier layer are covered with a dielectric material which is then vertically etched. The second phase of the etching then patterns the remaining layers. Another embodiment uses a hard mask above the top electrode to etch the MTJ pillar until near the end point of the bottom electrode, deposits a dielectric, then vertically etches the remaining bottom electrode.
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1. A method of fabricating memory cells comprising:
patterning a set of landing pads for the memory cells on a wafer;
depositing a dielectric film over the wafer;
etching selected holes through the dielectric film using a mask having gaps positioned over the dielectric film above a selected central area of an upper surface of each landing pad, the etching leaving the selected central area of the upper surface of each landing pad exposed;
depositing metal over the wafer and into the holes in the dielectric film to form metal studs in electrical contact with the upper surface of each landing pad; and
patterning a multi-layered memory cell pillar including a bottom electrode over each metal stud so that the metal stub provides electrical connection between the bottom electrode and the landing pad under the metal stud.
2. The method of
3. The method of
performing a first CMP process to planarize the wafer surface, the first CMP process leaving at least some metal studs having an upper surface recessed from an upper surface of dielectric material around the metal studs;
depositing a touch-up metal layer over the wafer; and
performing a second CMP process to remove the touch-up metal layer from the dielectric material around the metal studs while leaving residual touch-up metal on at least some of the metal studs metal studs to improve planarization.
4. The method of
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The present invention relates generally to semiconductor Back-End-Of-Line (BEOL) memories and particularly to Magnetic Random Access Memory (MRAM) and particularly to techniques and structures for preventing metallic redeposition on sidewalls of the memory element during fabrication.
The BEOL memories such as RRAM (Resistive Random Access Memory), PRAM (Phase Change Random Access Memory), and MRAM have a resistive device as a memory element. Because high speed access and non-volatility at power off are promised by these devices, they may replace existing memories and create new markets.
The source of the redeposition material can be the MTJ stack itself or previously deposited metal layers under the MTJ stack. Once the etching process that forms the pillars passes through the barrier layer, the exposed sidewall of the barrier layer becomes susceptible to being shorted with the redeposited metal. After the bottom electrode layer is etched away, previously deposited metal in the MTJ landing pad and peripheral circuits is exposed to the etching ambient and can be sputtered out and redeposited on the sidewall.
Embodiments of the invention include methods and structures to reduce metallic redeposition material in memory cells, such as MTJ cells, during pillar etching and thereby reduce or eliminate redeposition material on the MTJ barrier layer sidewall. A first embodiment forms metal studs on top of the MTJ landing pads in a dielectric layer that otherwise covers the exposed metal surfaces on the wafer to prevent exposing the metal to the MTJ etching ambient. The metal studs provide the electrical connection between the bottom electrodes and the landing pads. An optional process for this embodiment adds a touch-up metal layer and a light CMP to ensure a smooth surface for patterning the pillars.
The second embodiment patterns the MTJ and bottom electrode separately. The bottom electrode mask then covers metal under the bottom electrode. In this embodiment the MTJ mask can be patterned before or after the bottom electrode mask. The embodiment where the bottom electrode is defined prior to the MTJ includes depositing a dielectric layer used to stop bottom electrode etching to prevent building a deep step structure at the edge of the bottom electrode. This avoids the problem of the MTJ stack deposited on sidewall of the deep step being difficult to clean away.
The third embodiment divides the etching process of the MTJ pillars into two phases. The first phase etches through the barrier layer down to the lower magnetic layer. The exposed sidewalls, which include the barrier layer sidewalls, are covered with a dielectric material formed by deposition then vertical etching. The second phase of the etching then patterns the lower magnetic layer and bottom electrode. The sidewall of the barrier layer is thereby protected from shorting redeposition metal during phase two etching.
The fourth embodiment uses a hard mask above the top electrode in the layer stack. The method etches the MTJ pillar until near the end point of the bottom electrode, leaving a thin layer of the bottom electrode covering horizontal surfaces. A dielectric material is deposited, then vertically etched to leave a sleeve of dielectric material around most of the pillar. The vertical etching also removes the remaining bottom electrode. The sleeve of dielectric material protects the barrier layer from redeposition when metallic surfaces under the bottom electrode are exposed. The hard mask protects the top electrode in the MTJ pillar from excessive etching during this process.
In the following description of the embodiments, reference is made to the accompanying drawings that form a part hereof, and in which is shown by way of illustration of specific embodiments in which the invention may be practiced. It is to be understood that other embodiments may be utilized without departing from the scope of the present invention. It should be noted that the figures discussed herein are not drawn to scale and thicknesses of lines are not indicative of actual sizes. Some standard interconnection features are illustrated symbolically. The cross section view in the figures is generally taken through the approximate center the memory cell in a plane perpendicular to the wafer surface except where otherwise noted. Although only a few cell are shown in the figures, the method may used for the simultaneous fabrication of many cells in arrays on a wafer according to standard techniques. A plurality of arrays with associated circuitry can be made on a single wafer which can then be cut into smaller pieces (chips) for further processing into final operational devices.
Metallic redeposition 110 on sidewall of the memory element during MTJ etching is a serious issue because it can short the pair of magnetic layers. The source of the redeposition metal can be from the landing pad 12, the peripheral circuit 12′ and/or layers of the memory element itself.
As shown in
In a top plan view the MTJ pillars are generally oval-shaped but other shapes can be used including circles. There are two ways to place MTJ pillar as shown
The second embodiment patterns the MTJ and bottom electrode separately. An etch-stop layer is deposited on the ILD before the landing pads are formed by the damascene process. In this embodiment the MTJ mask can optionally be patterned before or after the bottom electrode mask. In one alternative the bottom electrode mask covers metal under the bottom electrode. The embodiment where the bottom electrode is defined prior to MTJ, the etch-stop layer stops bottom electrode etching to prevent building a deep step structure at the edge of the bottom electrode. This avoids the problem of the MTJ stack deposited on sidewall of the deep step being difficult to clean away.
To form the etch-stop layer structures 121, the stop layer material is deposited over the ILD 6 before the landing pads are formed. A trench is then formed in the stop layer 121 and the ILD. The trench is plugged with copper or tungsten using conventional Damascene process to form the landing pads 12, 12′. The bottom electrode layer is deposited over the wafer structure in
Using conventional lithography photoresist mask 122 is patterned to cover the landing pads 12 and peripheral metal 12′, followed by conventional dry etching to form a bottom electrode pads 13′ for each device as shown in
From the stage shown in
In an alternative of this second embodiment, the sequence of the MTJ mask and the bottom electrode mask are switched as shown in
A subsequent stage is illustrated in
From the stage shown in
In this fourth embodiment the MTJ pillars 19′ including a top hard mask layer (not shown) are deposited and patterned by using conventional lithography and dry etching as shown in
After the stage shown in
The end result of these process steps is that a protective sleeve of dielectric material 141′ surrounds the sidewalls of the pillars 19′ with the detail of the relationship between the protective sleeve of dielectric material 141′ and the bottom electrode 13X′ as shown in cross section in
The top hard mask has been etched away. The vertical etching process also removes the remaining bottom electrode material that was left in place when the pillars were initially etched as described above. The protective sidewall dielectric 141′ sleeve is in place when the final remaining bottom electrode material is removed and the sources of deleterious redeposition metal again increase. The standard interconnect process then follows as illustrated in the previous embodiments.
Zhang, Jing, Huai, Yiming, Abedifard, Ebrahim, Jung, Dong Ha, Keshtbod, Parviz, Satoh, Kimihiro
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