A method of parallel shift operation of multiple reactors includes: (i) continuously supplying n gases numbered 1 to n simultaneously to n gas ports via n main gas lines, respectively, at a constant flow rate, wherein one of branch gas lines of each main gas line is in an open state so that the inflow rates of the respective reactors are equal, and the outflow rates of the respective reactors are equal; and (ii) while maintaining the inflow rates and the outflow rates of the respective reactors, simultaneously closing the one of the branch gas lines of each main gas line in the open state and opening another one of the branch gas lines of each main gas line so that different numbered gases are continuously supplied to the respective reactors in parallel without changing the inflow rates and the outflow rates of the reactors.
|
1. A method of parallel shift operation of multiple reactors in which substrates are placed for processing, wherein n main gas lines numbered 1 to n and n gas ports numbered 1 to n for each main gas line are provided wherein n is an integer greater than one, each main gas line branches into n branch gas lines numbered 1 to n connected to the n gas ports, respectively, each branch gas line is provided with a valve for closing and opening the branch gas line, and each reactor is connected to a different gas ports, wherein one of branch gas lines 1 to n of each main gas line is in an open state at a time while alt the other branch gas lines of the main gas lines are in a closed state,
said method comprising:
(i) continuously supplying n gases numbered 1 to n simultaneously to the n gas ports via the n main gas lines, respectively, at a constant flow rate, wherein one of the branch gas lines of each main gas line is in an open state, said one of the branch gas lines being such that the inflow rates of the respective reactors are equal, and the outflow rates of the respective reactors are equal; and
(ii) while maintaining the inflow rates and the outflow rates of the respective reactors, simultaneously closing the one of the branch gas lines of each main gas line in the open state and opening another one of the branch gas lines of each main gas line so that each numbered gas is continuously supplied to different reactors in sequence wherein all of the numbered gases are switched by the valves from one reactor to another simultaneously through the processing of the substrates without changing the inflow rates and the outflow rates of the reactors,
further comprising switching gases constituting at least one of the numbered gases flowing through the main gas line upstream of the branch gas lines without interruption at the same total flow rate during step (i), where said switching of gases is synchronized to the switching of the numbered gases.
2. The method according to
3. The method according to
4. The method according to
5. The method according to
6. The method according to
7. The method according to
8. The method according to
9. The method according to
10. The method according to
11. The method according to
12. The method according to
13. The method according to
14. The method according to
15. The method according to
17. The method according to
18. The method according to
19. The method according to
|
1. Field of the Invention
The present invention generally relates to a semiconductor-manufacturing method, particularly to a method of parallel shift operation of multiple reactors wherein gases are continuously supplied to the reactors.
2. Description of the Related Art
A plasma-enhanced atomic layer deposition (PEALD) process typically repeats the following four steps as illustrated in
In step 1 (Precursor feeding), a precursor gas is supplied into a reactor chamber (RC) and the precursor is adsorbed onto a wafer surface. In step 2 (Purge), non-adsorbed precursor is removed from the reactor chamber. In step 3 (Plasma treatment), the adsorbed surface is activated by RF plasma for reaction of the precursor with a reactant gas. In step 4 (Purge), non-reacted precursor and by-products are removed from the surface. In the above, during the steps, the reactant gas continuously flows. Equipment for the PEALD process requires the following components as illustrated in
An RF generator (single or dual frequency): 1 device (4)/1 RC;
A precursor gas line: 1 line (1)/1 RC (if the process requires switching and flowing different precursors, a different line (2) is required for each precursor);
A reactant gas line: 1 line (3)/1 RC; and
An RC pressure control valve and exhaust line: 1 set (6, 7)/1 RC.
The required components must be changed when expanding the system from one RC to multiple RCs. By simple expansion, a two-RC system requires the following components as illustrated in
An RF generator (single or dual frequency): 2 devices (4, 4′)/2 RCs;
A precursor gas line: 2 lines (1, 1′)/2 RCs (if the process requires switching and flowing different precursors, a different line is required for each precursor per RC);
A reactant gas line: 2 lines (3, 3′)/2 RCs; and
An RC pressure control valve and exhaust line: 2 sets (6, 7, 6′,7′)/2 RCs.
Considering the above component redundancy, the system requirements can be modified, depending on the precursor supply system, the architecture of process sequence, and the process controllability between two RCs.
The precursor supply system is classified into the following two types:
(I) By on/off control of a precursor flow, precursor supply is controlled as illustrated in (I) in
(II) By switching a precursor flow and an inactive gas flow while maintaining the same flow rate, precursor supply is controlled as illustrated in (II) in
In the on-off flow control system, a liquid precursor is vaporized in a tank 41, a carrier gas is introduced into the tank 41 through a line 43, and when a valve 42 is closed, no flow goes out from the tank 41 through a line 44 as illustrated in (a) in
The architecture of process sequence is classified into the following two types.
(1) Concurrent processing between RC1 and RC2 as illustrated in (1) in
(2) Alternate processing between RC1 and RC2 as illustrated in (2) in
Concurrent processing is simple. In a PEALD process, the alternate processing can be selected to reduce system components by eliminating duplicate (simultaneous timing) operation of a single resource used only in a specific step. For example, by eliminating overlapping plasma treatment between two RCs, a single RF generator can be shared between the two RCs. In alternate processing, the same operation is conducted in two RCs alternately, wherein independent process step control is required for each of the RCs.
The process controllability between two RCs is classified into the following two types according to whether different processing cycles between two RCs can or cannot be set.
(A) Different processing cycles between two RCs can be set;
(B) Different processing cycles between two RCs cannot be set (only the same processing cycles can be set).
There are some advantages of setting the different processing cycles between two RCs. First, processes under different conditions (e.g., film thickness) of deposition can be performed simultaneously at the respective RCs. Second, an RC-to-RC mismatch can be adjusted by setting different processing cycles between the RCs. It should be noted that the system capable of alternate processing is naturally able to process different cycles between two RCs since independent process step control is required for each of the RCs capable of alternate processing.
The precursor supply system ((I): on-off flow control system; (II): switching flow control system), the architecture of process sequence ((1): concurrent processing; (2): alternate processing), and the process controllability between two RCs ((A): different cycles; (B): identical cycles) can be combined in multiple ways.
Table 1 below summarizes the above combinations and the required minimum components.
TABLE 1
RC pressure
Precursor line
Reactant gas
control valve
Combination
FIG.
RF generator
per precursor
line
and exhaust line
(I)-(1)-(A)
7
2 sets/2 RCs
1 sets/2 RCs
1 sets/2 RCs
2 sets/2 RCs
(I)-(1)-(B)
8
2 sets/2 RCs
1 sets/2 RCs
1 sets/2 RCs
1 sets/2 RCs
(I)-(2)
9
1 sets/2 RCs
1 sets/2 RCs
1 sets/2 RCs
2 sets/2 RCs
(II)-(1)-(A)
10
2 sets/2 RCs
2 sets/2 RCs
1 sets/2 RCs
1 sets/2 RCs
(II)-(1)-(B)
11
2 sets/2 RCs
1 sets/2 RCs
1 sets/2 RCs
1 sets/2 RCs
(II)-(2)
12
1 sets/2 RCs
2 sets/2 RCs
1 sets/2 RCs
1 sets/2 RCs
As shown in Table 1, in order to be capable of alternate processing (2) or different cycles (A), the system requires two sets of at least one of precursor lines or RC pressure control valves and exhaust lines.
The above examples are based on PEALD. However, any cyclic deposition (e.g., cyclic CVD, thermal ALD, radical-enhanced ALD, etc.) using multiple reaction chambers has similar problems in increasing the number of system components.
Further, in any cyclic deposition, film deposition processes based on chemical reaction typically use separate supply of reactant gas(es) during film deposition, because unwanted chemical reaction should be avoided between precursor and reactant gas(es), or because reactant gases need to be supplied separately for specific chemical reactions. For separate reactant gas supply, removing the reactant gas remaining in the reaction chamber before introducing another reactant gas is required. It requires additional transition time (e.g., >1 sec) at each and every reactant supply in order to remove the remaining reactant gas by purging the reaction chamber or pumping out the reaction chamber. Typically, the transition time includes stopping reactant gas supply, removing the remaining reactant gas by purging or pumping out the reaction chamber, and supplying and stabilizing a different reactant gas. Thus, changing gases increases process cycle time, lowering productivity. Further, since inactive gas is used for changing reactant gases and purging, the reactant gas is diluted by the inactive gas, and the partial pressure of the reactant gas is lowered, lowering chemical reaction speed.
Any discussion of problems and solutions involved in the related art has been included in this disclosure solely for the purposes of providing a context for the present invention, and should not be taken as an admission that any or all of the discussion were known at the time the invention was made.
Some embodiments provide a method of parallel shift operation of multiple reactors (also referred to as “reaction chambers”) in which substrates are placed, which is capable of reducing the number of system components and also is capable of significantly reducing the transition time. The “parallel shift operation” refers broadly to non-concurrent operation which includes operation shifting from one reactor to another. The parallel shift operation includes alternate processing with the capability of different cycles between two reactors. In some embodiments, the method is performed using an apparatus wherein n main gas lines numbered 1 to n and n gas ports numbered 1 to n are provided wherein n is an integer greater than one, each main gas line branches into n branch gas lines numbered 1 to n connected to the n gas ports, respectively, each branch gas line is provided with a valve for closing and opening the branch gas line, and each reactor is connected to a different gas port, wherein at least one (but not all), typically one, of branch gas lines 1 to n of each main gas line is in an open state at a time while all the other branch gas lines of the main gas line are in a closed state. The number n is determinable by a skilled artisan based on routine work, depending on how many discrete gases must be used for deposition. For example, n is any integer of 2, 3, 4, 5, or 6. The number of reactors is also determinable by a skilled artisan based on routine work, depending on the number n (the number of reactors does not exceed the number n) and the productivity. In some embodiments, the number n is equal to the sum of the number of reactors and the number of vents (which bypasses reactors and are connected to an exhaust). In some embodiments, the method comprises:
In some embodiments, although the main gas line and the exhaust line are shared by the reactors, parallel shift operation or alternate processing can be performed with substantially no transition time. In some embodiments, the operation of the multiple reactors is cyclic CVD or ALD (e.g., pulsed plasma-enhanced CVD, thermal ALD, plasma-enhanced ALD, or radical-enhanced ALD).
Also, some embodiments provide a semiconductor-processing apparatus which is capable of performing any of the disclosed methods, comprising:
For purposes of summarizing aspects of the invention and the advantages achieved over the related art, certain objects and advantages of the invention are described in this disclosure. Of course, it is to be understood that not necessarily all such objects or advantages may be achieved in accordance with any particular embodiment of the invention. Thus, for example, those skilled in the art will recognize that the invention may be embodied or carried out in a manner that achieves or optimizes one advantage or group of advantages as taught herein without necessarily achieving other objects or advantages as may be taught or suggested herein.
Further aspects, features and advantages of this invention will become apparent from the detailed description which follows.
These and other features of this invention will now be described with reference to the drawings of preferred embodiments which are intended to illustrate and not to limit the invention. The drawings are greatly simplified for illustrative purposes and are not necessarily to scale.
In this disclosure, “gas” may include vaporized solid and/or liquid and may be constituted by a single gas or a mixture of gases. In this disclosure, “a” refers to a species or a genus including multiple species. Further, in this disclosure, any two numbers of a variable can constitute an workable range of the variable as the workable range can be determined based on routine work, and any ranges indicated may include or exclude the endpoints. Additionally, any values of variables indicated may refer to precise values or approximate values and include equivalents, and may refer to average, median, representative, majority, etc. in some embodiments.
In the present disclosure where conditions and/or structures are not specified, the skilled artisan in the art can readily provide such conditions and/or structures, in view of the present disclosure, as a matter of routine experimentation.
In all of the disclosed embodiments, any element used in an embodiment can be replaced with any elements equivalent thereto, including those explicitly, necessarily, or inherently disclosed herein, for the intended purposes. Further, the present invention can equally be applied to apparatuses and methods.
In this disclosure, any defined meanings do not necessarily exclude ordinary and customary meanings in some embodiments.
As described above, some embodiments provide a method of parallel operation of multiple reactors in which substrates are placed, wherein n main gas lines numbered 1 to n and n gas ports numbered 1 to n are provided wherein n is an integer greater than one, each main gas line branches into n branch gas lines numbered 1 to n connected to the n gas ports, respectively, each branch gas line is provided with a valve for closing and opening the branch gas line, and each reactor is connected to a different gas port, wherein one of branch gas lines 1 to n of each main gas line is in an open state at a time while all the other branch gas lines of the main gas line are in a closed state, which method comprises: (i) continuously supplying n gases numbered 1 to n simultaneously to the n gas ports via the n main gas lines, respectively, at a constant flow rate, wherein one of the branch gas lines of each main gas line is in an open state, said one of the branch gas lines being such that the inflow rates of the respective reactors are equal, and the outflow rates of the respective reactors are equal; and (ii) while maintaining the inflow rates and the outflow rates of the respective reactors, simultaneously closing the one of the branch gas lines of each main gas line in the open state and opening another one of the branch gas lines of each main gas line so that different numbered gases are continuously supplied to the respective reactors in parallel without changing the inflow rates and the outflow rates of the reactors.
In the above, “continuously” refers to without interruption as a timeline, without changing physical conditions, immediately thereafter, or without intervening steps. In the present disclosure, “constant”, “equal”, “the same” or the like includes substantially constant, equal, the same or the like, and equivalents thereof, e.g., the difference is as functionally immaterial, negligible, or non-detectable as a skilled artisan would appreciate. Further, “reactor” or “reaction chamber” refers to a chamber for reaction regardless of the number of sections or compartments constituting the chamber, including a dual chamber, which are not separately or independently controllable.
In some embodiments, the method further comprises repeating step (ii) in sequence until a film is formed on a substrate.
In some embodiments, in step (i), the branch gas lines in the open state are branch gas lines 1 to n corresponding to main gas lines 1 to n, respectively, and in step (ii), the branch gas lines to be opened are the next numbered branch gas lines corresponding to main gas lines 1 to n, respectively, wherein the next number after number n returns to number 1.
The sequence of the parallel shift operation illustrated in
Reaction rate=k×[reactant A concentration]a×[reactant B concentration]b, wherein k, a, b=constant.
Reaction constants a, b are determined by each reaction, and k is a function of process temperature. For example, in the case of N2 (g)+3H2 (g)→2NH3 (g), reaction rate k is [N2]a×[H2]b (a=11, b=3, k is a temperature dependent constant determined by the arrhenius equation. When the concentrations of reactants are increased, the reaction rate can significantly be increased. Further, from langmuir isotherm, the adsorption rate can be determined as follows:
Adsorption rate (θ)=(αP)/(1+αP), wherein α: constant, P: partial pressure of adsorbing material.
By increasing partial pressure of reactant or precursor gas, the adsorption rate can also be increased. Accordingly, in some embodiments, the parallel shift operation can bring about advantages over conventional operation, including reducing or eliminating the transition time between different reactant gas supplies, minimizing the total gas flow in the reactor per cycle and increasing partial pressure of precursor or reactant gases so as to increase precursor surface adsorption and reaction rate, using two or more reactant gases, and/or reducing or eliminating pressure change during transition so as to improve process controllability and process stability.
If reactant gases should not be mixed in the reactor due to their chemical reactivity, inactive gas can be supplied to separate the reactant gases as illustrated in
Also, ambient gas can be independently controlled in combination with precursor supplies as illustrated in
Thus, in some embodiments, at least one of the n gases is an inactive gas, a reactant gas, or a mixture thereof, and the main gas line for the at least one of the n gases is capable of switching flow of the inactive gas and flow of the reactant gas or switching flow of the inactive gas and flow of the mixture gas without interruption at the same total flow rate. For example, switching flow of an inactive gas and flow of a mixture of a precursor and the inactive gas can be accomplished as illustrated in (II) in
When using the switching flow control system as illustrated in
In some embodiments, n is two, main gas lines 1 and 2 each supply an inactive gas, a reactant gas, or a mixture thereof at the same flow rate, and gas ports 1 and 2 are connected to two reactors as the multiple reactors, respectively.
In some embodiments, a common gas line is provided, which branches into gas lines connected to the multiple reactors, respectively, wherein a common gas is continuously supplied, through the common gas line simultaneously, to the multiple reactors. In
In some embodiments, the open state and closed state of each valve are controlled as illustrated in
TABLE 2
RC1 feed
Purge
RC2 feed
Purge
Valve 101
Closed
Open
Closed
Open
Valve 102
Open
Closed
Open
Closed
Valve 103
Open
Closed
Open
Closed
Valve 104
Open
Open
Closed
Closed
Valve 105
Closed
Closed
Open
Open
Valve 106
Closed
Closed
Open
Open
Valve 107
Open
Open
Closed
Closed
Valve 108
Open
Open
Open
Open
Valve 109
Closed
Closed
Closed
Closed
Valve 110
Closed
Closed
Closed
Closed
According to the above embodiment and other disclosed embodiments, the pressure of each reactor is substantially unchanged regardless of whether a precursor is supplied thereto or not Further, the pressure of each reactor is substantially unchanged when switching the reactors for a particular precursor. Thus, an exhaust can be shared by the reactors. However, if there are three or more reactors using parallel shift operation, in some embodiments, an exhaust may not be shared by all of the three or more reactors in view of the exhaust capacity, but may be shared by some of the reactors. Further, the pressure difference between the reactors is always substantially zero, and thus, unwanted and unintended flow of a material gas to the reactors through an exhaust line can effectively be inhibited, thereby precisely supplying a material gas to a target reactor.
Further, in the above examples, the precursor is liquid and is vaporized before being supplied to the gas port; however, the precursor can be gaseous without vaporization, and switching the reactant and the precursor can be accomplished as illustrated in
In some embodiments, n is three, main gas lines 1, 2, and 3 each supply an inactive gas, a reactant gas, or a mixture thereof at the same flow rate, and gas ports 1, 2, and 3 are connected to three reactors as the multiple reactors, respectively. In some embodiments, n is three, main gas lines 1, 2, and 3 each supply an inactive gas, a reactant gas, or a mixture thereof at the same flow rate, and gas ports 1, 2, and 3 are connected to two reactors as the multiple reactors and one vent, respectively. In some embodiments, n is three, main gas line 1 supplies an inactive gas, reactant gas, or a mixture thereof at the same flow rate, main gas lines 2 and 3 each supply an inactive gas, and gas ports 1, 2, and 3 are connected to three reactors as the multiple reactors, respectively. In some embodiments, the n gases are continuously reactant gases.
In
TABLE 3
P1
P2
RF
P1
supply
Purge
supply
Purge
charge
Purge
supply
Purge
RC1
Line 1
P1
IA
IA
IA
P1
IA
Line 2
P2
IA
P1
P2
RF
supply
Purge
supply
Purge
charge
Purge
RC2
Line 1
P1
IA
Line 2
P2
IA
IA
IA
Depending on the process, the order of P1 supply, P2 supply, and RF charge can be changed to P1 supply, RF charge, P2 supply, and RF charge. Further, the ratio of P1 cycle to P2 cycle need not be 1:1.
If only one precursor is used in place of two precursors in the above, the following process sequences of reaction chambers RC1 and RC2 shown in Tables 4 and 5 may be employed as an example:
TABLE 4
P1
RF
P1
RF
supply
Purge
charge
Purge
supply
Purge
charge
Purge
RC1
Line 1
P1
IA
P1
IA
Line 2
IA
IA
IA
IA
P1
RF
P1
supply
Purge
charge
Purge
supply
Purge
RC2
Line 1
P1
IA
P1
IA
Line 2
IA
IA
TABLE 5
P1
RF
P1
RF
supply
Purge
charge
Purge
supply
Purge
charge
Purge
RC1
Line 1
P1
IA
P1
IA
Line 2
IA
IA
IA
IA
P1
RF
P1
RF
supply
Purge
charge
Purge
supply
Purge
charge
RC2
Line 1
P1
IA
P1
IA
Line 2
IA
IA
IA
In the above, as long as RF charge does not overlap between reaction chambers RC1 and RC2, step duration, time lag, the number of cycles, etc. can be modified.
In
TABLE 6
P1
P2
P3
RF
supply
Purge
supply
Purge
supply
Purge
charge
Purge
RC1
Line 1
P1
IA
IA
IA
Line 2
P2
IA
Line 3
P3
IA
P1
P2
P3
supply
Purge
supply
Purge
supply
Purge
RC2
Line 1
P1
IA
Line 2
P2
IA
Line 3
P3
IA
P1
P2
supply
Purge
supply
Purge
RC3
Line 1
P1
IA
Line 2
P2
IA
Line 3
P1
P2
P3
RF
supply
Purge
supply
Purge
supply
Purge
charge
Purge
RC1
Line 1
P1
IA
IA
IA
Line 2
P2
IA
Line 3
P3
IA
RF
P1
P2
P3
charge
Purge
supply
Purge
supply
Purge
supply
Purge
RC2
Line 1
P1
IA
Line 2
IA
IA
P2
IA
Line 3
P3
IA
P3
RF
P1
P2
supply
Purge
charge
Purge
supply
Purge
supply
Purge
RC3
Line 1
P1
IA
Line 2
P2
IA
Line 3
P3
IA
IA
IA
Depending on the process, the timing of RF charge can be changed after each of the precursor supplies, and also as long as RF charge does not overlap between reaction chambers RC1 and RC2, step duration, time lag, the number of cycles, etc. can be modified.
In
In
TABLE 7
P1
RF
P1
RF
supply
Purge
charge
Purge
supply
Purge
charge
Purge
RC1
Line 1
P1
IA
P1
IA
Line 2
IA1
IA1
Line 3
IA2
IA2
P1
RF
P1
RF
supply
Purge
charge
Purge
supply
Purge
charge
RC2
Line 1
P1
P1
Line 2
IA1
IA1
IA1
Line 3
IA2
IA2
P1
RF
P1
supply
Purge
charge
Purge
supply
Purge
RC3
Line 1
P1
P1
Line 2
IA1
IA1
Line 3
IA2
IA2
Depending on the process, also as long as RF charge does not overlap between reaction chambers RC1 and RC2, step duration, time lag, the number of cycles, etc. can be modified.
In the above, PEALD processes are used as examples. However, other cyclic deposition such as thermal or radical-enhanced ALD can be performed in a manner similar to PEALD, as illustrated in
In some embodiments, gases 1 to n are not reactive to each other when they are in a non-excited state. In some embodiments, the type of gas which can be supplied in main gas line M1, main gas line M2, and main gas line C1 shown in
TABLE 8
Reactivity between
gases without plasma
C1
M1
M2
Non reactive
Reactant 3
Reactant 1
Reactant 2
(Precursor 1)
(Precursor 2)
Reactant 3
Reactant 1
Inactive
(Precursor 1)
Reactive
Inactive gas
Reactant 1
Reactant 2
(Precursor 1)
(Precursor 2)
Inactive gas
Reactant 1
Inactive gas
(Precursor 1)
As described above, in some embodiments, another main gas line is provided, which branches into branch gas lines connected to the multiple reactors, respectively, each branch gas line being provided with a valve for closing and opening the branch gas line, wherein another reactant gas is supplied to the multiple reactors in sequence by (a) continuously supplying the other reactant gas to the other main gas lines; (b) during step (a), supplying the other reactant gas to one of the multiple reactors via the branch gas line connected thereto, wherein the valves of the branch gas lines are in an open state, and the valves of the other branch gas lines are in a closed state; (c) during step (a) and after step (b), simultaneously closing the valves of the branch gas lines in the open state and opening the valve of another of the branch gas lines in the closed state, thereby supplying the other reactant gas to another of the multiple reactors connected to the other branch gas line; and (d) repeating step (c) in sequence.
In some embodiments, the other main gas line supplies an inactive gas, the other reactant gas, or a mixture thereof, and the other main gas line is capable of switching the inactive gas and the other reactant gas or switching the inactive gas and the mixture gas without interruption at the same total flow rate.
The disclosed embodiments include, but are not limited to, a method of parallel shift operation of at least two reactors, wherein n main gas lines numbered 1 to n and n gas ports numbered 1 to n are provided wherein n is an integer greater than one, each main gas line branching into n branch gas lines numbered 1 to n connected to the n gas ports, respectively, each branch gas line being provided with a valve for closing and opening the branch gas line, each reactor being connected to a different gas port, said method comprising:
In the above embodiment, “shifted sequences” include sequences with different cycles between the reactors. Further, in the above embodiment, any modifications explicitly, implicitly, necessarily, or inherently disclosed herein can be applied.
In another aspect, some embodiments provide a semiconductor-processing apparatus comprising: (a) multiple reactors; (b) n main gas lines numbered 1 to n and n gas ports numbered 1 to n, wherein n is an integer greater than one, each main gas line branches into n branch gas lines numbered 1 to n connected to the n gas ports, respectively, each branch gas line is provided with a valve for closing and opening the branch gas line, and each reactor is connected to a different gas port, wherein one of branch gas lines 1 to n of each main gas line is in an open state at a time while all the other branch gas lines of the main gas line are in a closed state; and (c) a common exhaust shared by the reactors, wherein the valves of the branch gas lines are programmed to (i) continuously supply n gases numbered 1 to n simultaneously to the n gas ports via the n main gas lines, respectively, at a constant flow rate, wherein one of the branch gas lines of each main gas line is in an open state so that the inflow rates of the respective reactors are equal, and the outflow rates of the respective reactors are equal; and (ii) while maintaining the inflow rates and the outflow rates of the respective reactors, simultaneously close the one of the branch gas lines of each main gas line in the open state and open another one of the branch gas lines of each main gas line so that different numbered gases are continuously supplied to the respective reactors in parallel without changing the inflow rates and the outflow rates of the reactors.
A skilled artisan can readily modify the above apparatus to perform any of the methods disclosed in the present disclosure based on routine work.
It will be understood by those of skill in the art that numerous and various modifications can be made without departing from the spirit of the present invention. Therefore, it should be clearly understood that the forms of the present invention are illustrative only and are not intended to limit the scope of the present invention.
Patent | Priority | Assignee | Title |
10023960, | Sep 12 2012 | ASM IP Holdings B.V. | Process gas management for an inductively-coupled plasma deposition reactor |
10032628, | May 02 2016 | ASM IP HOLDING B V | Source/drain performance through conformal solid state doping |
10043661, | Jul 13 2015 | ASM IP Holding B.V. | Method for protecting layer by forming hydrocarbon-based extremely thin film |
10083836, | Jul 24 2015 | ASM IP Holding B.V.; ASM IP HOLDING B V | Formation of boron-doped titanium metal films with high work function |
10087522, | Apr 21 2016 | ASM IP HOLDING B V | Deposition of metal borides |
10087525, | Aug 04 2015 | ASM IP Holding B.V. | Variable gap hard stop design |
10090316, | Sep 01 2016 | ASM IP Holding B.V.; ASM IP HOLDING B V | 3D stacked multilayer semiconductor memory using doped select transistor channel |
10103040, | Mar 31 2017 | ASM IP HOLDING B V | Apparatus and method for manufacturing a semiconductor device |
10134757, | Nov 07 2016 | ASM IP Holding B.V. | Method of processing a substrate and a device manufactured by using the method |
10167557, | Mar 18 2014 | ASM IP Holding B.V. | Gas distribution system, reactor including the system, and methods of using the same |
10177025, | Jul 28 2016 | ASM IP HOLDING B V | Method and apparatus for filling a gap |
10179947, | Nov 26 2013 | ASM IP Holding B.V.; ASM IP HOLDING B V | Method for forming conformal nitrided, oxidized, or carbonized dielectric film by atomic layer deposition |
10190213, | Apr 21 2016 | ASM IP HOLDING B V | Deposition of metal borides |
10211308, | Oct 21 2015 | ASM IP Holding B.V. | NbMC layers |
10229833, | Nov 01 2016 | ASM IP Holding B.V.; ASM IP HOLDING B V | Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
10236177, | Aug 22 2017 | ASM IP HOLDING B V | Methods for depositing a doped germanium tin semiconductor and related semiconductor device structures |
10249524, | Aug 09 2017 | ASM IP Holding B.V. | Cassette holder assembly for a substrate cassette and holding member for use in such assembly |
10249577, | May 17 2016 | ASM IP Holding B.V.; ASM IP HOLDING B V | Method of forming metal interconnection and method of fabricating semiconductor apparatus using the method |
10262859, | Mar 24 2016 | ASM IP Holding B.V. | Process for forming a film on a substrate using multi-port injection assemblies |
10269558, | Dec 22 2016 | ASM IP Holding B.V.; ASM IP HOLDING B V | Method of forming a structure on a substrate |
10276355, | Mar 12 2015 | ASM IP Holding B.V. | Multi-zone reactor, system including the reactor, and method of using the same |
10283353, | Mar 29 2017 | ASM IP HOLDING B V | Method of reforming insulating film deposited on substrate with recess pattern |
10290508, | Dec 05 2017 | ASM IP Holding B.V.; ASM IP HOLDING B V | Method for forming vertical spacers for spacer-defined patterning |
10312055, | Jul 26 2017 | ASM IP Holding B.V. | Method of depositing film by PEALD using negative bias |
10312129, | Sep 29 2015 | ASM IP Holding B.V. | Variable adjustment for precise matching of multiple chamber cavity housings |
10319588, | Oct 10 2017 | ASM IP HOLDING B V | Method for depositing a metal chalcogenide on a substrate by cyclical deposition |
10322384, | Nov 09 2015 | ASM IP Holding B.V.; ASM IP HOLDING B V | Counter flow mixer for process chamber |
10340125, | Mar 08 2013 | ASM IP Holding B.V. | Pulsed remote plasma method and system |
10340135, | Nov 28 2016 | ASM IP Holding B.V.; ASM IP HOLDING B V | Method of topologically restricted plasma-enhanced cyclic deposition of silicon or metal nitride |
10343920, | Mar 18 2016 | ASM IP HOLDING B V | Aligned carbon nanotubes |
10361201, | Sep 27 2013 | ASM IP Holding B.V. | Semiconductor structure and device formed using selective epitaxial process |
10364496, | Jun 27 2011 | ASM IP Holding B.V. | Dual section module having shared and unshared mass flow controllers |
10366864, | Mar 18 2013 | ASM IP Holding B.V. | Method and system for in-situ formation of intermediate reactive species |
10367080, | May 02 2016 | ASM IP HOLDING B V | Method of forming a germanium oxynitride film |
10378106, | Nov 14 2008 | ASM IP Holding B.V. | Method of forming insulation film by modified PEALD |
10381219, | Oct 25 2018 | ASM IP Holding B.V. | Methods for forming a silicon nitride film |
10381226, | Jul 27 2016 | ASM IP Holding B.V. | Method of processing substrate |
10388509, | Jun 28 2016 | ASM IP Holding B.V. | Formation of epitaxial layers via dislocation filtering |
10388513, | Jul 03 2018 | ASM IP Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
10395919, | Jul 28 2016 | ASM IP HOLDING B V | Method and apparatus for filling a gap |
10403504, | Oct 05 2017 | ASM IP HOLDING B V | Method for selectively depositing a metallic film on a substrate |
10410943, | Oct 13 2016 | ASM IP Holding B.V. | Method for passivating a surface of a semiconductor and related systems |
10435790, | Nov 01 2016 | ASM IP Holding B.V. | Method of subatmospheric plasma-enhanced ALD using capacitively coupled electrodes with narrow gap |
10438965, | Dec 22 2014 | ASM IP Holding B.V. | Semiconductor device and manufacturing method thereof |
10446393, | May 08 2017 | ASM IP Holding B.V. | Methods for forming silicon-containing epitaxial layers and related semiconductor device structures |
10458018, | Jun 26 2015 | ASM IP Holding B.V.; ASM IP HOLDING B V | Structures including metal carbide material, devices including the structures, and methods of forming same |
10468251, | Feb 19 2016 | ASM IP Holding B.V.; ASM IP HOLDING B V | Method for forming spacers using silicon nitride film for spacer-defined multiple patterning |
10468261, | Feb 15 2017 | ASM IP HOLDING B V | Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures |
10468262, | Feb 15 2017 | ASM IP Holding B.V. | Methods for forming a metallic film on a substrate by a cyclical deposition and related semiconductor device structures |
10480072, | Apr 06 2009 | ASM IP HOLDING B V | Semiconductor processing reactor and components thereof |
10483099, | Jul 26 2018 | ASM IP Holding B.V.; ASM IP HOLDING B V | Method for forming thermally stable organosilicon polymer film |
10501866, | Mar 09 2016 | ASM IP Holding B.V. | Gas distribution apparatus for improved film uniformity in an epitaxial system |
10504742, | May 31 2017 | ASM IP Holding B.V.; ASM IP HOLDING B V | Method of atomic layer etching using hydrogen plasma |
10510536, | Mar 29 2018 | ASM IP Holding B.V. | Method of depositing a co-doped polysilicon film on a surface of a substrate within a reaction chamber |
10529542, | Mar 11 2015 | ASM IP Holdings B.V. | Cross-flow reactor and method |
10529554, | Feb 19 2016 | ASM IP Holding B.V. | Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches |
10529563, | Mar 29 2017 | ASM IP Holdings B.V. | Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures |
10535516, | Feb 01 2018 | ASM IP Holdings B.V. | Method for depositing a semiconductor structure on a surface of a substrate and related semiconductor structures |
10541173, | Jul 08 2016 | ASM IP Holding B.V. | Selective deposition method to form air gaps |
10541333, | Jul 19 2017 | ASM IP Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
10559458, | Nov 26 2018 | ASM IP Holding B.V. | Method of forming oxynitride film |
10561975, | Oct 07 2014 | ASM IP Holdings B.V. | Variable conductance gas distribution apparatus and method |
10566223, | Aug 28 2012 | ASM IP Holdings B.V.; ASM IP HOLDING B V | Systems and methods for dynamic semiconductor process scheduling |
10590535, | Jul 26 2017 | ASM IP HOLDING B V | Chemical treatment, deposition and/or infiltration apparatus and method for using the same |
10600673, | Jul 07 2015 | ASM IP Holding B.V.; ASM IP HOLDING B V | Magnetic susceptor to baseplate seal |
10604847, | Mar 18 2014 | ASM IP Holding B.V. | Gas distribution system, reactor including the system, and methods of using the same |
10605530, | Jul 26 2017 | ASM IP Holding B.V. | Assembly of a liner and a flange for a vertical furnace as well as the liner and the vertical furnace |
10607895, | Sep 18 2017 | ASM IP HOLDING B V | Method for forming a semiconductor device structure comprising a gate fill metal |
10612136, | Jun 29 2018 | ASM IP HOLDING B V ; ASM IP Holding, B.V. | Temperature-controlled flange and reactor system including same |
10612137, | Jul 08 2016 | ASM IP HOLDING B V | Organic reactants for atomic layer deposition |
10622375, | Nov 07 2016 | ASM IP Holding B.V. | Method of processing a substrate and a device manufactured by using the method |
10643826, | Oct 26 2016 | ASM IP HOLDING B V | Methods for thermally calibrating reaction chambers |
10643904, | Nov 01 2016 | ASM IP HOLDING B V | Methods for forming a semiconductor device and related semiconductor device structures |
10644025, | Nov 07 2016 | ASM IP Holding B.V. | Method of processing a substrate and a device manufactured by using the method |
10655221, | Feb 09 2017 | ASM IP Holding B.V. | Method for depositing oxide film by thermal ALD and PEALD |
10658181, | Feb 20 2018 | ASM IP Holding B.V.; ASM IP HOLDING B V | Method of spacer-defined direct patterning in semiconductor fabrication |
10658205, | Sep 28 2017 | ASM IP HOLDING B V | Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber |
10665452, | May 02 2016 | ASM IP Holdings B.V. | Source/drain performance through conformal solid state doping |
10672636, | Aug 09 2017 | ASM IP Holding B.V. | Cassette holder assembly for a substrate cassette and holding member for use in such assembly |
10683571, | Feb 25 2014 | ASM IP Holding B.V. | Gas supply manifold and method of supplying gases to chamber using same |
10685834, | Jul 05 2017 | ASM IP Holdings B.V. | Methods for forming a silicon germanium tin layer and related semiconductor device structures |
10692741, | Aug 08 2017 | ASM IP Holdings B.V.; ASM IP HOLDING B V | Radiation shield |
10707106, | Jun 06 2011 | ASM IP Holding B.V.; ASM IP HOLDING B V | High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules |
10714315, | Oct 12 2012 | ASM IP Holdings B.V.; ASM IP HOLDING B V | Semiconductor reaction chamber showerhead |
10714335, | Apr 25 2017 | ASM IP Holding B.V.; ASM IP HOLDING B V | Method of depositing thin film and method of manufacturing semiconductor device |
10714350, | Nov 01 2016 | ASM IP Holdings, B.V.; ASM IP HOLDING B V | Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
10714385, | Jul 19 2016 | ASM IP Holding B.V. | Selective deposition of tungsten |
10720322, | Feb 19 2016 | ASM IP Holding B.V. | Method for forming silicon nitride film selectively on top surface |
10720331, | Nov 01 2016 | ASM IP Holdings, B.V. | Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
10731249, | Feb 15 2018 | ASM IP HOLDING B V | Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus |
10734223, | Oct 10 2017 | ASM IP Holding B.V. | Method for depositing a metal chalcogenide on a substrate by cyclical deposition |
10734244, | Nov 16 2017 | ASM IP Holding B.V. | Method of processing a substrate and a device manufactured by the same |
10734497, | Jul 18 2017 | ASM IP HOLDING B V | Methods for forming a semiconductor device structure and related semiconductor device structures |
10741385, | Jul 28 2016 | ASM IP HOLDING B V | Method and apparatus for filling a gap |
10755922, | Jul 03 2018 | ASM IP HOLDING B V | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
10755923, | Jul 03 2018 | ASM IP Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
10767789, | Jul 16 2018 | ASM IP Holding B.V. | Diaphragm valves, valve components, and methods for forming valve components |
10770286, | May 08 2017 | ASM IP Holdings B.V.; ASM IP HOLDING B V | Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures |
10770336, | Aug 08 2017 | ASM IP Holding B.V.; ASM IP HOLDING B V | Substrate lift mechanism and reactor including same |
10784102, | Dec 22 2016 | ASM IP Holding B.V. | Method of forming a structure on a substrate |
10787741, | Aug 21 2014 | ASM IP Holding B.V. | Method and system for in situ formation of gas-phase compounds |
10797133, | Jun 21 2018 | ASM IP Holding B.V.; ASM IP HOLDING B V | Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures |
10804098, | Aug 14 2009 | ASM IP HOLDING B V | Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species |
10811256, | Oct 16 2018 | ASM IP Holding B.V. | Method for etching a carbon-containing feature |
10818758, | Nov 16 2018 | ASM IP Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
10829852, | Aug 16 2018 | ASM IP Holding B.V. | Gas distribution device for a wafer processing apparatus |
10832903, | Oct 28 2011 | ASM IP Holding B.V. | Process feed management for semiconductor substrate processing |
10844484, | Sep 22 2017 | ASM IP Holding B.V.; ASM IP HOLDING B V | Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
10844486, | Apr 06 2009 | ASM IP HOLDING B V | Semiconductor processing reactor and components thereof |
10847365, | Oct 11 2018 | ASM IP Holding B.V.; ASM IP HOLDING B V | Method of forming conformal silicon carbide film by cyclic CVD |
10847366, | Nov 16 2018 | ASM IP Holding B.V. | Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process |
10847371, | Mar 27 2018 | ASM IP Holding B.V. | Method of forming an electrode on a substrate and a semiconductor device structure including an electrode |
10851456, | Apr 21 2016 | ASM IP Holding B.V. | Deposition of metal borides |
10854498, | Jul 15 2011 | ASM IP Holding B.V.; ASM JAPAN K K | Wafer-supporting device and method for producing same |
10858737, | Jul 28 2014 | ASM IP Holding B.V.; ASM IP HOLDING B V | Showerhead assembly and components thereof |
10865475, | Apr 21 2016 | ASM IP HOLDING B V | Deposition of metal borides and silicides |
10867786, | Mar 30 2018 | ASM IP Holding B.V. | Substrate processing method |
10867788, | Dec 28 2016 | ASM IP Holding B.V.; ASM IP HOLDING B V | Method of forming a structure on a substrate |
10872771, | Jan 16 2018 | ASM IP Holding B. V. | Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures |
10883175, | Aug 09 2018 | ASM IP HOLDING B V | Vertical furnace for processing substrates and a liner for use therein |
10886123, | Jun 02 2017 | ASM IP Holding B.V. | Methods for forming low temperature semiconductor layers and related semiconductor device structures |
10892156, | May 08 2017 | ASM IP Holding B.V.; ASM IP HOLDING B V | Methods for forming a silicon nitride film on a substrate and related semiconductor device structures |
10896820, | Feb 14 2018 | ASM IP HOLDING B V | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
10910262, | Nov 16 2017 | ASM IP HOLDING B V | Method of selectively depositing a capping layer structure on a semiconductor device structure |
10914004, | Jun 29 2018 | ASM IP Holding B.V. | Thin-film deposition method and manufacturing method of semiconductor device |
10923344, | Oct 30 2017 | ASM IP HOLDING B V | Methods for forming a semiconductor structure and related semiconductor structures |
10928731, | Sep 21 2017 | ASM IP Holding B.V. | Method of sequential infiltration synthesis treatment of infiltrateable material and structures and devices formed using same |
10934619, | Nov 15 2016 | ASM IP Holding B.V.; ASM IP HOLDING B V | Gas supply unit and substrate processing apparatus including the gas supply unit |
10941490, | Oct 07 2014 | ASM IP Holding B.V. | Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same |
10943771, | Oct 26 2016 | ASM IP Holding B.V. | Methods for thermally calibrating reaction chambers |
10950432, | Apr 25 2017 | ASM IP Holding B.V. | Method of depositing thin film and method of manufacturing semiconductor device |
10975470, | Feb 23 2018 | ASM IP Holding B.V. | Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment |
11001925, | Dec 19 2016 | ASM IP Holding B.V. | Substrate processing apparatus |
11004977, | Jul 19 2017 | ASM IP Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
11015245, | Mar 19 2014 | ASM IP Holding B.V. | Gas-phase reactor and system having exhaust plenum and components thereof |
11018002, | Jul 19 2017 | ASM IP Holding B.V. | Method for selectively depositing a Group IV semiconductor and related semiconductor device structures |
11018047, | Jan 25 2018 | ASM IP Holding B.V. | Hybrid lift pin |
11022879, | Nov 24 2017 | ASM IP Holding B.V. | Method of forming an enhanced unexposed photoresist layer |
11024523, | Sep 11 2018 | ASM IP Holding B.V.; ASM IP HOLDING B V | Substrate processing apparatus and method |
11031242, | Nov 07 2018 | ASM IP Holding B.V. | Methods for depositing a boron doped silicon germanium film |
11049751, | Sep 14 2018 | ASM IP Holding B.V.; ASM IP HOLDING B V | Cassette supply system to store and handle cassettes and processing apparatus equipped therewith |
11053591, | Aug 06 2018 | ASM IP Holding B.V. | Multi-port gas injection system and reactor system including same |
11056344, | Aug 30 2017 | ASM IP HOLDING B V | Layer forming method |
11056567, | May 11 2018 | ASM IP Holding B.V. | Method of forming a doped metal carbide film on a substrate and related semiconductor device structures |
11069510, | Aug 30 2017 | ASM IP Holding B.V. | Substrate processing apparatus |
11081345, | Feb 06 2018 | ASM IP Holding B.V.; ASM IP HOLDING B V | Method of post-deposition treatment for silicon oxide film |
11087997, | Oct 31 2018 | ASM IP Holding B.V.; ASM IP HOLDING B V | Substrate processing apparatus for processing substrates |
11088002, | Mar 29 2018 | ASM IP HOLDING B V | Substrate rack and a substrate processing system and method |
11094546, | Oct 05 2017 | ASM IP Holding B.V. | Method for selectively depositing a metallic film on a substrate |
11094582, | Jul 08 2016 | ASM IP Holding B.V. | Selective deposition method to form air gaps |
11101370, | May 02 2016 | ASM IP Holding B.V. | Method of forming a germanium oxynitride film |
11107676, | Jul 28 2016 | ASM IP Holding B.V. | Method and apparatus for filling a gap |
11114283, | Mar 16 2018 | ASM IP Holding B.V. | Reactor, system including the reactor, and methods of manufacturing and using same |
11114294, | Mar 08 2019 | ASM IP Holding B.V. | Structure including SiOC layer and method of forming same |
11127589, | Feb 01 2019 | ASM IP Holding B.V. | Method of topology-selective film formation of silicon oxide |
11127617, | Nov 27 2017 | ASM IP HOLDING B V | Storage device for storing wafer cassettes for use with a batch furnace |
11139191, | Aug 09 2017 | ASM IP HOLDING B V | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
11139308, | Dec 29 2015 | ASM IP Holding B.V.; ASM IP HOLDING B V | Atomic layer deposition of III-V compounds to form V-NAND devices |
11158513, | Dec 13 2018 | ASM IP Holding B.V.; ASM IP HOLDING B V | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
11164955, | Jul 18 2017 | ASM IP Holding B.V. | Methods for forming a semiconductor device structure and related semiconductor device structures |
11168395, | Jun 29 2018 | ASM IP Holding B.V. | Temperature-controlled flange and reactor system including same |
11171025, | Jan 22 2019 | ASM IP Holding B.V. | Substrate processing device |
11205585, | Jul 28 2016 | ASM IP Holding B.V.; ASM IP HOLDING B V | Substrate processing apparatus and method of operating the same |
11217444, | Nov 30 2018 | ASM IP HOLDING B V | Method for forming an ultraviolet radiation responsive metal oxide-containing film |
11222772, | Dec 14 2016 | ASM IP Holding B.V. | Substrate processing apparatus |
11227782, | Jul 31 2019 | ASM IP Holding B.V. | Vertical batch furnace assembly |
11227789, | Feb 20 2019 | ASM IP Holding B.V. | Method and apparatus for filling a recess formed within a substrate surface |
11230766, | Mar 29 2018 | ASM IP HOLDING B V | Substrate processing apparatus and method |
11232963, | Oct 03 2018 | ASM IP Holding B.V. | Substrate processing apparatus and method |
11233133, | Oct 21 2015 | ASM IP Holding B.V. | NbMC layers |
11242598, | Jun 26 2015 | ASM IP Holding B.V. | Structures including metal carbide material, devices including the structures, and methods of forming same |
11244825, | Nov 16 2018 | ASM IP Holding B.V. | Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process |
11251035, | Dec 22 2016 | ASM IP Holding B.V. | Method of forming a structure on a substrate |
11251040, | Feb 20 2019 | ASM IP Holding B.V. | Cyclical deposition method including treatment step and apparatus for same |
11251068, | Oct 19 2018 | ASM IP Holding B.V. | Substrate processing apparatus and substrate processing method |
11270899, | Jun 04 2018 | ASM IP Holding B.V. | Wafer handling chamber with moisture reduction |
11274369, | Sep 11 2018 | ASM IP Holding B.V. | Thin film deposition method |
11282698, | Jul 19 2019 | ASM IP Holding B.V. | Method of forming topology-controlled amorphous carbon polymer film |
11286558, | Aug 23 2019 | ASM IP Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
11286562, | Jun 08 2018 | ASM IP Holding B.V. | Gas-phase chemical reactor and method of using same |
11289326, | May 07 2019 | ASM IP Holding B.V. | Method for reforming amorphous carbon polymer film |
11295980, | Aug 30 2017 | ASM IP HOLDING B V | Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures |
11296189, | Jun 21 2018 | ASM IP Holding B.V. | Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures |
11306395, | Jun 28 2017 | ASM IP HOLDING B V | Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus |
11315794, | Oct 21 2019 | ASM IP Holding B.V. | Apparatus and methods for selectively etching films |
11339476, | Oct 08 2019 | ASM IP Holding B.V. | Substrate processing device having connection plates, substrate processing method |
11342216, | Feb 20 2019 | ASM IP Holding B.V. | Cyclical deposition method and apparatus for filling a recess formed within a substrate surface |
11345999, | Jun 06 2019 | ASM IP Holding B.V. | Method of using a gas-phase reactor system including analyzing exhausted gas |
11355338, | May 10 2019 | ASM IP Holding B.V. | Method of depositing material onto a surface and structure formed according to the method |
11361990, | May 28 2018 | ASM IP Holding B.V. | Substrate processing method and device manufactured by using the same |
11374112, | Jul 19 2017 | ASM IP Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
11378337, | Mar 28 2019 | ASM IP Holding B.V. | Door opener and substrate processing apparatus provided therewith |
11387106, | Feb 14 2018 | ASM IP Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
11387120, | Sep 28 2017 | ASM IP Holding B.V. | Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber |
11390945, | Jul 03 2019 | ASM IP Holding B.V. | Temperature control assembly for substrate processing apparatus and method of using same |
11390946, | Jan 17 2019 | ASM IP Holding B.V. | Methods of forming a transition metal containing film on a substrate by a cyclical deposition process |
11390950, | Jan 10 2017 | ASM IP HOLDING B V | Reactor system and method to reduce residue buildup during a film deposition process |
11393690, | Jan 19 2018 | ASM IP HOLDING B V | Deposition method |
11396702, | Nov 15 2016 | ASM IP Holding B.V. | Gas supply unit and substrate processing apparatus including the gas supply unit |
11398382, | Mar 27 2018 | ASM IP Holding B.V. | Method of forming an electrode on a substrate and a semiconductor device structure including an electrode |
11401605, | Nov 26 2019 | ASM IP Holding B.V. | Substrate processing apparatus |
11410851, | Feb 15 2017 | ASM IP Holding B.V. | Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures |
11411088, | Nov 16 2018 | ASM IP Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
11414760, | Oct 08 2018 | ASM IP Holding B.V. | Substrate support unit, thin film deposition apparatus including the same, and substrate processing apparatus including the same |
11417545, | Aug 08 2017 | ASM IP Holding B.V. | Radiation shield |
11424119, | Mar 08 2019 | ASM IP HOLDING B V | Method for selective deposition of silicon nitride layer and structure including selectively-deposited silicon nitride layer |
11430640, | Jul 30 2019 | ASM IP Holding B.V. | Substrate processing apparatus |
11430674, | Aug 22 2018 | ASM IP Holding B.V.; ASM IP HOLDING B V | Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
11437241, | Apr 08 2020 | ASM IP Holding B.V. | Apparatus and methods for selectively etching silicon oxide films |
11443926, | Jul 30 2019 | ASM IP Holding B.V. | Substrate processing apparatus |
11447861, | Dec 15 2016 | ASM IP HOLDING B V | Sequential infiltration synthesis apparatus and a method of forming a patterned structure |
11447864, | Apr 19 2019 | ASM IP Holding B.V. | Layer forming method and apparatus |
11453943, | May 25 2016 | ASM IP Holding B.V.; ASM IP HOLDING B V | Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor |
11453946, | Jun 06 2019 | ASM IP Holding B.V. | Gas-phase reactor system including a gas detector |
11469098, | May 08 2018 | ASM IP Holding B.V. | Methods for depositing an oxide film on a substrate by a cyclical deposition process and related device structures |
11473195, | Mar 01 2018 | ASM IP Holding B.V. | Semiconductor processing apparatus and a method for processing a substrate |
11476109, | Jun 11 2019 | ASM IP Holding B.V. | Method of forming an electronic structure using reforming gas, system for performing the method, and structure formed using the method |
11482412, | Jan 19 2018 | ASM IP HOLDING B V | Method for depositing a gap-fill layer by plasma-assisted deposition |
11482418, | Feb 20 2018 | ASM IP Holding B.V. | Substrate processing method and apparatus |
11482533, | Feb 20 2019 | ASM IP Holding B.V. | Apparatus and methods for plug fill deposition in 3-D NAND applications |
11488819, | Dec 04 2018 | ASM IP Holding B.V. | Method of cleaning substrate processing apparatus |
11488854, | Mar 11 2020 | ASM IP Holding B.V. | Substrate handling device with adjustable joints |
11492703, | Jun 27 2018 | ASM IP HOLDING B V | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
11495459, | Sep 04 2019 | ASM IP Holding B.V. | Methods for selective deposition using a sacrificial capping layer |
11499222, | Jun 27 2018 | ASM IP HOLDING B V | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
11499226, | Nov 02 2018 | ASM IP Holding B.V. | Substrate supporting unit and a substrate processing device including the same |
11501956, | Oct 12 2012 | ASM IP Holding B.V. | Semiconductor reaction chamber showerhead |
11501968, | Nov 15 2019 | ASM IP Holding B.V.; ASM IP HOLDING B V | Method for providing a semiconductor device with silicon filled gaps |
11501973, | Jan 16 2018 | ASM IP Holding B.V. | Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures |
11515187, | May 01 2020 | ASM IP Holding B.V.; ASM IP HOLDING B V | Fast FOUP swapping with a FOUP handler |
11515188, | May 16 2019 | ASM IP Holding B.V. | Wafer boat handling device, vertical batch furnace and method |
11521851, | Feb 03 2020 | ASM IP HOLDING B V | Method of forming structures including a vanadium or indium layer |
11527400, | Aug 23 2019 | ASM IP Holding B.V. | Method for depositing silicon oxide film having improved quality by peald using bis(diethylamino)silane |
11527403, | Dec 19 2019 | ASM IP Holding B.V. | Methods for filling a gap feature on a substrate surface and related semiconductor structures |
11530483, | Jun 21 2018 | ASM IP Holding B.V. | Substrate processing system |
11530876, | Apr 24 2020 | ASM IP Holding B.V. | Vertical batch furnace assembly comprising a cooling gas supply |
11532757, | Oct 27 2016 | ASM IP Holding B.V. | Deposition of charge trapping layers |
11551912, | Jan 20 2020 | ASM IP Holding B.V. | Method of forming thin film and method of modifying surface of thin film |
11551925, | Apr 01 2019 | ASM IP Holding B.V. | Method for manufacturing a semiconductor device |
11557474, | Jul 29 2019 | ASM IP Holding B.V. | Methods for selective deposition utilizing n-type dopants and/or alternative dopants to achieve high dopant incorporation |
11562901, | Sep 25 2019 | ASM IP Holding B.V. | Substrate processing method |
11572620, | Nov 06 2018 | ASM IP Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
11581186, | Dec 15 2016 | ASM IP HOLDING B V | Sequential infiltration synthesis apparatus |
11581220, | Aug 30 2017 | ASM IP Holding B.V. | Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures |
11587814, | Jul 31 2019 | ASM IP Holding B.V. | Vertical batch furnace assembly |
11587815, | Jul 31 2019 | ASM IP Holding B.V. | Vertical batch furnace assembly |
11587821, | Aug 08 2017 | ASM IP Holding B.V. | Substrate lift mechanism and reactor including same |
11594450, | Aug 22 2019 | ASM IP HOLDING B V | Method for forming a structure with a hole |
11594600, | Nov 05 2019 | ASM IP Holding B.V. | Structures with doped semiconductor layers and methods and systems for forming same |
11605528, | Jul 09 2019 | ASM IP Holding B.V. | Plasma device using coaxial waveguide, and substrate treatment method |
11610774, | Oct 02 2019 | ASM IP Holding B.V. | Methods for forming a topographically selective silicon oxide film by a cyclical plasma-enhanced deposition process |
11610775, | Jul 28 2016 | ASM IP HOLDING B V | Method and apparatus for filling a gap |
11615970, | Jul 17 2019 | ASM IP HOLDING B V | Radical assist ignition plasma system and method |
11615980, | Feb 20 2019 | ASM IP Holding B.V. | Method and apparatus for filling a recess formed within a substrate surface |
11626308, | May 13 2020 | ASM IP Holding B.V. | Laser alignment fixture for a reactor system |
11626316, | Nov 20 2019 | ASM IP Holding B.V. | Method of depositing carbon-containing material on a surface of a substrate, structure formed using the method, and system for forming the structure |
11629406, | Mar 09 2018 | ASM IP Holding B.V.; ASM IP HOLDING B V | Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate |
11629407, | Feb 22 2019 | ASM IP Holding B.V. | Substrate processing apparatus and method for processing substrates |
11637011, | Oct 16 2019 | ASM IP Holding B.V. | Method of topology-selective film formation of silicon oxide |
11637014, | Oct 17 2019 | ASM IP Holding B.V. | Methods for selective deposition of doped semiconductor material |
11639548, | Aug 21 2019 | ASM IP Holding B.V. | Film-forming material mixed-gas forming device and film forming device |
11639811, | Nov 27 2017 | ASM IP HOLDING B V | Apparatus including a clean mini environment |
11643724, | Jul 18 2019 | ASM IP Holding B.V. | Method of forming structures using a neutral beam |
11644758, | Jul 17 2020 | ASM IP Holding B.V. | Structures and methods for use in photolithography |
11646184, | Nov 29 2019 | ASM IP Holding B.V. | Substrate processing apparatus |
11646197, | Jul 03 2018 | ASM IP Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
11646204, | Jun 24 2020 | ASM IP Holding B.V.; ASM IP HOLDING B V | Method for forming a layer provided with silicon |
11646205, | Oct 29 2019 | ASM IP Holding B.V. | Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same |
11649546, | Jul 08 2016 | ASM IP Holding B.V. | Organic reactants for atomic layer deposition |
11658029, | Dec 14 2018 | ASM IP HOLDING B V | Method of forming a device structure using selective deposition of gallium nitride and system for same |
11658030, | Mar 29 2017 | ASM IP Holding B.V. | Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures |
11658035, | Jun 30 2020 | ASM IP HOLDING B V | Substrate processing method |
11664199, | Oct 19 2018 | ASM IP Holding B.V. | Substrate processing apparatus and substrate processing method |
11664245, | Jul 16 2019 | ASM IP Holding B.V. | Substrate processing device |
11664267, | Jul 10 2019 | ASM IP Holding B.V. | Substrate support assembly and substrate processing device including the same |
11674220, | Jul 20 2020 | ASM IP Holding B.V. | Method for depositing molybdenum layers using an underlayer |
11676812, | Feb 19 2016 | ASM IP Holding B.V. | Method for forming silicon nitride film selectively on top/bottom portions |
11680839, | Aug 05 2019 | ASM IP Holding B.V. | Liquid level sensor for a chemical source vessel |
11682572, | Nov 27 2017 | ASM IP Holdings B.V. | Storage device for storing wafer cassettes for use with a batch furnace |
11685991, | Feb 14 2018 | ASM IP HOLDING B V ; Universiteit Gent | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
11688603, | Jul 17 2019 | ASM IP Holding B.V. | Methods of forming silicon germanium structures |
11694892, | Jul 28 2016 | ASM IP Holding B.V. | Method and apparatus for filling a gap |
11695054, | Jul 18 2017 | ASM IP Holding B.V. | Methods for forming a semiconductor device structure and related semiconductor device structures |
11705333, | May 21 2020 | ASM IP Holding B.V. | Structures including multiple carbon layers and methods of forming and using same |
11718913, | Jun 04 2018 | ASM IP Holding B.V.; ASM IP HOLDING B V | Gas distribution system and reactor system including same |
11725277, | Jul 20 2011 | ASM IP HOLDING B V | Pressure transmitter for a semiconductor processing environment |
11725280, | Aug 26 2020 | ASM IP Holding B.V. | Method for forming metal silicon oxide and metal silicon oxynitride layers |
11735414, | Feb 06 2018 | ASM IP Holding B.V. | Method of post-deposition treatment for silicon oxide film |
11735422, | Oct 10 2019 | ASM IP HOLDING B V | Method of forming a photoresist underlayer and structure including same |
11735445, | Oct 31 2018 | ASM IP Holding B.V. | Substrate processing apparatus for processing substrates |
11742189, | Mar 12 2015 | ASM IP Holding B.V. | Multi-zone reactor, system including the reactor, and method of using the same |
11742198, | Mar 08 2019 | ASM IP Holding B.V. | Structure including SiOCN layer and method of forming same |
11746414, | Jul 03 2019 | ASM IP Holding B.V. | Temperature control assembly for substrate processing apparatus and method of using same |
11749562, | Jul 08 2016 | ASM IP Holding B.V. | Selective deposition method to form air gaps |
11767589, | May 29 2020 | ASM IP Holding B.V. | Substrate processing device |
11769670, | Dec 13 2018 | ASM IP Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
11769682, | Aug 09 2017 | ASM IP Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
11776846, | Feb 07 2020 | ASM IP Holding B.V. | Methods for depositing gap filling fluids and related systems and devices |
11781221, | May 07 2019 | ASM IP Holding B.V. | Chemical source vessel with dip tube |
11781243, | Feb 17 2020 | ASM IP Holding B.V. | Method for depositing low temperature phosphorous-doped silicon |
11795545, | Oct 07 2014 | ASM IP Holding B.V. | Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same |
11798830, | May 01 2020 | ASM IP Holding B.V. | Fast FOUP swapping with a FOUP handler |
11798834, | Feb 20 2019 | ASM IP Holding B.V. | Cyclical deposition method and apparatus for filling a recess formed within a substrate surface |
11798999, | Nov 16 2018 | ASM IP Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
11802338, | Jul 26 2017 | ASM IP Holding B.V. | Chemical treatment, deposition and/or infiltration apparatus and method for using the same |
11804364, | May 19 2020 | ASM IP Holding B.V. | Substrate processing apparatus |
11804388, | Sep 11 2018 | ASM IP Holding B.V. | Substrate processing apparatus and method |
11810788, | Nov 01 2016 | ASM IP Holding B.V. | Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
11814715, | Jun 27 2018 | ASM IP Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
11814747, | Apr 24 2019 | ASM IP Holding B.V. | Gas-phase reactor system-with a reaction chamber, a solid precursor source vessel, a gas distribution system, and a flange assembly |
11821078, | Apr 15 2020 | ASM IP HOLDING B V | Method for forming precoat film and method for forming silicon-containing film |
11823866, | Apr 02 2020 | ASM IP Holding B.V. | Thin film forming method |
11823876, | Sep 05 2019 | ASM IP Holding B.V.; ASM IP HOLDING B V | Substrate processing apparatus |
11827978, | Aug 23 2019 | ASM IP Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
11827981, | Oct 14 2020 | ASM IP HOLDING B V | Method of depositing material on stepped structure |
11828707, | Feb 04 2020 | ASM IP Holding B.V. | Method and apparatus for transmittance measurements of large articles |
11830730, | Aug 29 2017 | ASM IP HOLDING B V | Layer forming method and apparatus |
11830738, | Apr 03 2020 | ASM IP Holding B.V. | Method for forming barrier layer and method for manufacturing semiconductor device |
11837483, | Jun 04 2018 | ASM IP Holding B.V. | Wafer handling chamber with moisture reduction |
11837494, | Mar 11 2020 | ASM IP Holding B.V. | Substrate handling device with adjustable joints |
11840761, | Dec 04 2019 | ASM IP Holding B.V. | Substrate processing apparatus |
11848200, | May 08 2017 | ASM IP Holding B.V. | Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures |
11851755, | Dec 15 2016 | ASM IP Holding B.V. | Sequential infiltration synthesis apparatus and a method of forming a patterned structure |
11866823, | Nov 02 2018 | ASM IP Holding B.V. | Substrate supporting unit and a substrate processing device including the same |
11873557, | Oct 22 2020 | ASM IP HOLDING B V | Method of depositing vanadium metal |
11876008, | Jul 31 2019 | ASM IP Holding B.V. | Vertical batch furnace assembly |
11876356, | Mar 11 2020 | ASM IP Holding B.V. | Lockout tagout assembly and system and method of using same |
11885013, | Dec 17 2019 | ASM IP Holding B.V. | Method of forming vanadium nitride layer and structure including the vanadium nitride layer |
11885020, | Dec 22 2020 | ASM IP Holding B.V. | Transition metal deposition method |
11885023, | Oct 01 2018 | ASM IP Holding B.V. | Substrate retaining apparatus, system including the apparatus, and method of using same |
11887857, | Apr 24 2020 | ASM IP Holding B.V. | Methods and systems for depositing a layer comprising vanadium, nitrogen, and a further element |
11891696, | Nov 30 2020 | ASM IP Holding B.V. | Injector configured for arrangement within a reaction chamber of a substrate processing apparatus |
11898242, | Aug 23 2019 | ASM IP Holding B.V. | Methods for forming a polycrystalline molybdenum film over a surface of a substrate and related structures including a polycrystalline molybdenum film |
11898243, | Apr 24 2020 | ASM IP Holding B.V. | Method of forming vanadium nitride-containing layer |
11901175, | Mar 08 2019 | ASM IP Holding B.V. | Method for selective deposition of silicon nitride layer and structure including selectively-deposited silicon nitride layer |
11901179, | Oct 28 2020 | ASM IP HOLDING B V | Method and device for depositing silicon onto substrates |
11908684, | Jun 11 2019 | ASM IP Holding B.V. | Method of forming an electronic structure using reforming gas, system for performing the method, and structure formed using the method |
11908733, | May 28 2018 | ASM IP Holding B.V. | Substrate processing method and device manufactured by using the same |
11915929, | Nov 26 2019 | ASM IP Holding B.V. | Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface |
11923181, | Nov 29 2019 | ASM IP Holding B.V. | Substrate processing apparatus for minimizing the effect of a filling gas during substrate processing |
11923190, | Jul 03 2018 | ASM IP Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
11929251, | Dec 02 2019 | ASM IP Holding B.V. | Substrate processing apparatus having electrostatic chuck and substrate processing method |
11939673, | Feb 23 2018 | ASM IP Holding B.V. | Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment |
11946137, | Dec 16 2020 | ASM IP HOLDING B V | Runout and wobble measurement fixtures |
11952658, | Jun 27 2018 | ASM IP Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
11956977, | Dec 29 2015 | ASM IP Holding B.V. | Atomic layer deposition of III-V compounds to form V-NAND devices |
11959168, | Apr 29 2020 | ASM IP HOLDING B V ; ASM IP Holding B.V. | Solid source precursor vessel |
11959171, | Jan 17 2019 | ASM IP Holding B.V. | Methods of forming a transition metal containing film on a substrate by a cyclical deposition process |
11961741, | Mar 12 2020 | ASM IP Holding B.V. | Method for fabricating layer structure having target topological profile |
11967488, | Feb 01 2013 | ASM IP Holding B.V. | Method for treatment of deposition reactor |
11970766, | Dec 15 2016 | ASM IP Holding B.V. | Sequential infiltration synthesis apparatus |
11972944, | Jan 19 2018 | ASM IP Holding B.V. | Method for depositing a gap-fill layer by plasma-assisted deposition |
11976359, | Jan 06 2020 | ASM IP Holding B.V. | Gas supply assembly, components thereof, and reactor system including same |
11976361, | Jun 28 2017 | ASM IP Holding B.V. | Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus |
11986868, | Feb 28 2020 | ASM IP Holding B.V. | System dedicated for parts cleaning |
11987881, | May 22 2020 | ASM IP Holding B.V. | Apparatus for depositing thin films using hydrogen peroxide |
11993843, | Aug 31 2017 | ASM IP Holding B.V. | Substrate processing apparatus |
11993847, | Jan 08 2020 | ASM IP HOLDING B V | Injector |
11996289, | Apr 16 2020 | ASM IP HOLDING B V | Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods |
11996292, | Oct 25 2019 | ASM IP Holding B.V. | Methods for filling a gap feature on a substrate surface and related semiconductor structures |
11996304, | Jul 16 2019 | ASM IP Holding B.V. | Substrate processing device |
11996309, | May 16 2019 | ASM IP HOLDING B V ; ASM IP Holding B.V. | Wafer boat handling device, vertical batch furnace and method |
12055863, | Jul 17 2020 | ASM IP Holding B.V. | Structures and methods for use in photolithography |
12057314, | May 15 2020 | ASM IP Holding B.V. | Methods for silicon germanium uniformity control using multiple precursors |
12074022, | Aug 27 2020 | ASM IP Holding B.V. | Method and system for forming patterned structures using multiple patterning process |
12087586, | Apr 15 2020 | ASM IP HOLDING B V | Method of forming chromium nitride layer and structure including the chromium nitride layer |
12106944, | Jun 02 2020 | ASM IP Holding B.V. | Rotating substrate support |
12106965, | Feb 15 2017 | ASM IP Holding B.V. | Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures |
12107000, | Jul 10 2019 | ASM IP Holding B.V. | Substrate support assembly and substrate processing device including the same |
12107005, | Oct 06 2020 | ASM IP Holding B.V. | Deposition method and an apparatus for depositing a silicon-containing material |
12112940, | Jul 19 2019 | ASM IP Holding B.V. | Method of forming topology-controlled amorphous carbon polymer film |
12119220, | Dec 19 2019 | ASM IP Holding B.V. | Methods for filling a gap feature on a substrate surface and related semiconductor structures |
12119228, | Jan 19 2018 | ASM IP Holding B.V. | Deposition method |
12125700, | Jan 16 2020 | ASM IP Holding B.V. | Method of forming high aspect ratio features |
12129545, | Dec 22 2020 | ASM IP Holding B.V. | Precursor capsule, a vessel and a method |
12129548, | Jul 18 2019 | ASM IP Holding B.V. | Method of forming structures using a neutral beam |
12130084, | Apr 24 2020 | ASM IP Holding B.V. | Vertical batch furnace assembly comprising a cooling gas supply |
12131885, | Dec 22 2020 | ASM IP Holding B.V. | Plasma treatment device having matching box |
12148609, | Sep 16 2020 | ASM IP HOLDING B V | Silicon oxide deposition method |
12154824, | Aug 14 2020 | ASM IP Holding B.V. | Substrate processing method |
12159788, | Dec 14 2020 | ASM IP Holding B.V. | Method of forming structures for threshold voltage control |
12169361, | Jul 30 2019 | ASM IP HOLDING B V | Substrate processing apparatus and method |
12173402, | Feb 15 2018 | ASM IP Holding B.V. | Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus |
12173404, | Mar 17 2020 | ASM IP Holding B.V. | Method of depositing epitaxial material, structure formed using the method, and system for performing the method |
12176243, | Feb 20 2019 | ASM IP Holding B.V. | Method and apparatus for filling a recess formed within a substrate surface |
9324811, | Sep 26 2012 | ASM IP Holding B.V.; ASM IP HOLDING B V | Structures and devices including a tensile-stressed silicon arsenic layer and methods of forming same |
9384987, | Apr 04 2012 | ASM IP Holding B.V.; ASM IP HOLDING B V | Metal oxide protective layer for a semiconductor device |
9394608, | Apr 06 2009 | ASM IP HOLDING B V | Semiconductor processing reactor and components thereof |
9404587, | Apr 24 2014 | ASM IP Holding B.V | Lockout tagout for semiconductor vacuum valve |
9412564, | Jul 22 2013 | ASM IP Holding B.V. | Semiconductor reaction chamber with plasma capabilities |
9447498, | Mar 18 2014 | ASM IP Holding B.V.; ASM IP HOLDING B V | Method for performing uniform processing in gas system-sharing multiple reaction chambers |
9455138, | Nov 10 2015 | ASM IP HOLDING B V | Method for forming dielectric film in trenches by PEALD using H-containing gas |
9478415, | Feb 13 2015 | ASM IP Holding B.V. | Method for forming film having low resistance and shallow junction depth |
9484191, | Mar 08 2013 | ASM IP Holding B.V. | Pulsed remote plasma method and system |
9543180, | Aug 01 2014 | ASM IP Holding B.V. | Apparatus and method for transporting wafers between wafer carrier and process tool under vacuum |
9556516, | Oct 09 2013 | ASM IP Holding B.V; ASM IP HOLDING B V | Method for forming Ti-containing film by PEALD using TDMAT or TDEAT |
9558931, | Jul 27 2012 | ASM IP HOLDING B V | System and method for gas-phase sulfur passivation of a semiconductor surface |
9589770, | Mar 08 2013 | ASM IP Holding B.V. | Method and systems for in-situ formation of intermediate reactive species |
9605342, | Sep 12 2012 | ASM IP Holding B.V. | Process gas management for an inductively-coupled plasma deposition reactor |
9607837, | Dec 21 2015 | ASM IP Holding B.V.; ASM IP HOLDING B V | Method for forming silicon oxide cap layer for solid state diffusion process |
9627221, | Dec 28 2015 | ASM IP Holding B.V. | Continuous process incorporating atomic layer etching |
9640416, | Dec 26 2012 | ASM IP Holding B.V. | Single-and dual-chamber module-attachable wafer-handling chamber |
9647114, | Aug 14 2015 | ASM IP Holding B.V. | Methods of forming highly p-type doped germanium tin films and structures and devices including the films |
9657845, | Oct 07 2014 | ASM IP Holding B.V. | Variable conductance gas distribution apparatus and method |
9659799, | Aug 28 2012 | ASM IP Holding B.V.; ASM IP HOLDING B V | Systems and methods for dynamic semiconductor process scheduling |
9711345, | Aug 25 2015 | ASM IP HOLDING B V | Method for forming aluminum nitride-based film by PEALD |
9735024, | Dec 28 2015 | ASM IP Holding B.V. | Method of atomic layer etching using functional group-containing fluorocarbon |
9754779, | Feb 19 2016 | ASM IP Holding B.V.; ASM IP HOLDING B V | Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches |
9790595, | Jul 12 2013 | ASM IP Holding B.V. | Method and system to reduce outgassing in a reaction chamber |
9793115, | Aug 14 2013 | ASM IP Holding B.V. | Structures and devices including germanium-tin films and methods of forming same |
9793135, | Jul 14 2016 | ASM IP HOLDING B V | Method of cyclic dry etching using etchant film |
9793148, | Jun 22 2011 | ASM Japan K.K. | Method for positioning wafers in multiple wafer transport |
9812320, | Jul 28 2016 | ASM IP HOLDING B V | Method and apparatus for filling a gap |
9859151, | Jul 08 2016 | ASM IP HOLDING B V | Selective film deposition method to form air gaps |
9887082, | Jul 28 2016 | ASM IP HOLDING B V | Method and apparatus for filling a gap |
9890456, | Aug 21 2014 | ASM IP Holding B.V. | Method and system for in situ formation of gas-phase compounds |
9891521, | Nov 19 2014 | ASM IP Holding B.V.; ASM IP HOLDING B V | Method for depositing thin film |
9892908, | Oct 28 2011 | ASM IP HOLDING B V | Process feed management for semiconductor substrate processing |
9899291, | Jul 13 2015 | ASM IP Holding B.V.; ASM IP HOLDING B V | Method for protecting layer by forming hydrocarbon-based extremely thin film |
9899405, | Dec 22 2014 | ASM IP Holding B.V.; ASM IP HOLDING B V | Semiconductor device and manufacturing method thereof |
9905420, | Dec 01 2015 | ASM IP HOLDING B V | Methods of forming silicon germanium tin films and structures and devices including the films |
9909214, | Oct 15 2015 | ASM IP Holding B.V.; ASM IP HOLDING B V | Method for depositing dielectric film in trenches by PEALD |
9916980, | Dec 15 2016 | ASM IP HOLDING B V | Method of forming a structure on a substrate |
9960072, | Sep 29 2015 | ASM IP Holding B.V. | Variable adjustment for precise matching of multiple chamber cavity housings |
D830981, | Apr 07 2017 | ASM IP HOLDING B V ; ASM IP Holding B.V. | Susceptor for semiconductor substrate processing apparatus |
D880437, | Feb 01 2018 | ASM IP Holding B.V. | Gas supply plate for semiconductor manufacturing apparatus |
D900036, | Aug 24 2017 | ASM IP Holding B.V.; ASM IP HOLDING B V | Heater electrical connector and adapter |
D903477, | Jan 24 2018 | ASM IP HOLDING B V | Metal clamp |
D913980, | Feb 01 2018 | ASM IP Holding B.V. | Gas supply plate for semiconductor manufacturing apparatus |
D922229, | Jun 05 2019 | ASM IP Holding B.V. | Device for controlling a temperature of a gas supply unit |
D930782, | Aug 22 2019 | ASM IP Holding B.V. | Gas distributor |
D931978, | Jun 27 2019 | ASM IP Holding B.V. | Showerhead vacuum transport |
D935572, | May 24 2019 | ASM IP Holding B.V.; ASM IP HOLDING B V | Gas channel plate |
D940837, | Aug 22 2019 | ASM IP Holding B.V. | Electrode |
D944946, | Jun 14 2019 | ASM IP Holding B.V. | Shower plate |
D947913, | May 17 2019 | ASM IP Holding B.V.; ASM IP HOLDING B V | Susceptor shaft |
D948463, | Oct 24 2018 | ASM IP Holding B.V. | Susceptor for semiconductor substrate supporting apparatus |
D949319, | Aug 22 2019 | ASM IP Holding B.V. | Exhaust duct |
D965044, | Aug 19 2019 | ASM IP Holding B.V.; ASM IP HOLDING B V | Susceptor shaft |
D965524, | Aug 19 2019 | ASM IP Holding B.V. | Susceptor support |
D975665, | May 17 2019 | ASM IP Holding B.V. | Susceptor shaft |
D979506, | Aug 22 2019 | ASM IP Holding B.V. | Insulator |
D980813, | May 11 2021 | ASM IP HOLDING B V | Gas flow control plate for substrate processing apparatus |
D980814, | May 11 2021 | ASM IP HOLDING B V | Gas distributor for substrate processing apparatus |
D981973, | May 11 2021 | ASM IP HOLDING B V | Reactor wall for substrate processing apparatus |
ER1077, | |||
ER1413, | |||
ER1726, | |||
ER195, | |||
ER2810, | |||
ER315, | |||
ER3883, | |||
ER3967, | |||
ER4264, | |||
ER4403, | |||
ER4489, | |||
ER4496, | |||
ER4646, | |||
ER4732, | |||
ER6015, | |||
ER6261, | |||
ER6328, | |||
ER6881, | |||
ER7009, | |||
ER7365, | |||
ER7895, | |||
ER8714, | |||
ER8750, | |||
ER9386, | |||
ER9931, |
Patent | Priority | Assignee | Title |
20010028924, | |||
20020110991, | |||
20030082307, | |||
20040082171, | |||
20050241763, | |||
20050274323, | |||
20060137609, |
Executed on | Assignor | Assignee | Conveyance | Frame | Reel | Doc |
Aug 02 2012 | ASM IP Holding B.V. | (assignment on the face of the patent) | / | |||
Aug 02 2012 | ADACHI, WATARU | ASM IP HOLDING B V | ASSIGNMENT OF ASSIGNORS INTEREST SEE DOCUMENT FOR DETAILS | 028717 | /0858 | |
Aug 02 2012 | HA, JEONGSEOK | ASM IP HOLDING B V | ASSIGNMENT OF ASSIGNORS INTEREST SEE DOCUMENT FOR DETAILS | 028717 | /0858 |
Date | Maintenance Fee Events |
May 31 2018 | M1551: Payment of Maintenance Fee, 4th Year, Large Entity. |
May 19 2022 | M1552: Payment of Maintenance Fee, 8th Year, Large Entity. |
Date | Maintenance Schedule |
Dec 16 2017 | 4 years fee payment window open |
Jun 16 2018 | 6 months grace period start (w surcharge) |
Dec 16 2018 | patent expiry (for year 4) |
Dec 16 2020 | 2 years to revive unintentionally abandoned end. (for year 4) |
Dec 16 2021 | 8 years fee payment window open |
Jun 16 2022 | 6 months grace period start (w surcharge) |
Dec 16 2022 | patent expiry (for year 8) |
Dec 16 2024 | 2 years to revive unintentionally abandoned end. (for year 8) |
Dec 16 2025 | 12 years fee payment window open |
Jun 16 2026 | 6 months grace period start (w surcharge) |
Dec 16 2026 | patent expiry (for year 12) |
Dec 16 2028 | 2 years to revive unintentionally abandoned end. (for year 12) |