In accordance with certain embodiments, a method can be utilized that includes depositing a backfill material layer over a reader stack; depositing a chemical-mechanical-polishing stop layer above the layer of backfill material; and depositing a sacrificial layer on top of the chemical-mechanical-polishing stop layer.
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11. An apparatus comprising:
a reader stack;
a backfill layer next to and above the reader stack;
a chemical-mechanical polishing stop layer on top of the backfill layer; and
a sacrificial layer on top of the chemical-mechanical-polishing stop layer.
1. A method comprising:
depositing a backfill material layer over a reader stack;
after depositing the backfill material, depositing a chemical-mechanical-polishing stop layer above the layer of backfill material; and
after depositing the chemical-mechanical-polishing stop layer, depositing a sacrificial layer on top of the chemical-mechanical-polishing stop layer.
2. The method as claimed in
exposing a portion of a photoresist layer disposed on the reader stack.
3. The method as claimed in
removing the photoresist via the exposed portion.
4. The method as claimed in
milling through the sacrificial layer, the chemical-mechanical-polishing stop layer, and the backfill layer.
5. The method as claimed in
forming a substantially vertical reader stack.
6. The method as claimed in
removing a portion of a free layer while not removing a corresponding portion of a magnetic layer disposed beneath the free layer so as to form a long stripe magnetic reader.
8. The method as claimed in
forming a cap on the reader having a thickness between about 0.5 nm and about 5.0 nm.
9. The method as claimed in
10. The method as claimed in
12. The apparatus as claimed in
a photoresist layer disposed on top of the reader stack; and
wherein the backfill layer covers the photoresist layer.
13. The apparatus as claimed in
an opening formed in the backfill layer so as to expose the photoresist layer.
14. The apparatus as claimed in
15. The apparatus as claimed in
16. The apparatus as claimed in
a freelayer;
a magnetic layer disposed beneath the free layer and having a length longer than the length of the free layer.
18. The apparatus as claimed in
a cap layer on the reader stack comprising a thickness between about 0.5 nm and about 5.0 nm.
19. The apparatus as claimed in
20. The apparatus as claimed in
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In semiconductor manufacturing, even small topological structures can impact the performance of a device. For example, in devices using magnetic materials, small topological structures can impact the magnetic properties of the device. As one example, a read head used in disc drives can be fabricated using semiconductor processing. The read head can utilize several different layers of materials in order to form a reader stack (or read sensor) in the desired configuration. A reader stack is the portion of read head that is configured to sense changes in a magnetic field. Thus, during operation, the reader stack can sense a change in the magnetic field of a magnetic medium positioned proximate to the reader stack. If a topological remnant is left behind from processing steps used to fabricate the read head, that topological remnant can potentially impact the magnetic properties of the read head depending on the size, location, and material of the topological remnant.
This Summary is provided to introduce a selection of concepts in a simplified form that are further described below in the Detailed Description. This Summary is not intended to identify key features or essential features of the claimed subject matter, nor is it intended to be used to limit the scope of the claimed subject matter. Other features, details, utilities, and advantages of the claimed subject matter will be apparent from the following more particular written Detailed Description of various implementations and implementations as further illustrated in the accompanying drawings and defined in the appended claims.
In accordance with certain embodiments, an apparatus includes a reader stack; a backfill layer disposed next to the reader stack; a chemical-mechanical polishing stop layer disposed above the backfill layer; and a sacrificial layer disposed on top of the chemical-mechanical-polishing stop layer.
In accordance with certain embodiments, a method can be utilized that includes depositing a backfill material layer over a reader stack; depositing a chemical-mechanical-polishing stop layer above the layer of backfill material; and depositing a sacrificial layer on top of the chemical-mechanical-polishing stop layer.
These and various other features will be apparent from the following detailed description.
A further understanding of the nature and advantages of the present technology may be realized by reference to the figures, which are described in the remaining portion of the specification.
Embodiments of the present technology are disclosed herein in the context of a read head for use with a disc drive system. However, it should be understood that the technology is not limited to a read head for a disc drive system and could readily be applied to other technology systems as well.
With reference now to
Information may be written to and read from the different data tracks 110. A transducer head 124 is mounted on an actuator assembly 120 at an end distal to an actuator axis of rotation 122 and the transducer head 124 flies in close proximity above the surface of the disc 102 during disc operation. The actuator assembly 120 rotates during a seek operation about the actuator axis of rotation 122 positioned adjacent to the disc 102. The seek operation positions the transducer head 124 over a target data track of the data tracks 110.
The exploded view 140 shows a cross-sectional view of a portion of a transducer head that is utilizing a long SAF read head. A read head formed with an SAF layer that is much longer than the associated free layer is referred to as a “long SAF read head.” The cross-sectional view shows a shield layer 224, a cap layer 212, a free layer 210, a barrier layer 208, a long SAF layer 206, and an antiferromagnetic layer 204. A backfill layer 216 is shown above the free layer 210 and cap layer 212. Additional layers are not shown. The long SAF read head is shown with a substantially linear back edge 226. A substantially linear back edge is believed to be difficult to achieve for a long SAF read head. In accordance with certain embodiments, a process for forming a long SAF read head with a substantially linear back edge is described in further detail below.
Referring now to
In order to remove the photoresist layer 214, the photoresist is exposed to a solution that can be used to remove the photoresist from the structure 200.
Thus,
When a chemical-mechanical-polishing procedure is performed on the intermediate structure shown in
Referring now to
Operation block 804 notes that the process allows a substantially linear back edge to be formed by the reader stack. For example,
In operation block 806, a backfill material is deposited over a reader stack. For example, Al2O3 can be utilized as the backfill material. Other backfill materials may be utilized as well. A chemical-mechanical-polishing stop layer is deposited above the layer of backfill material in accordance with operation block 808. The CMP-stop layer is selected to have a CMP rate that is slower than the CMP rate of the backfill material. In addition, a sacrificial layer is deposited on top of the CMP-stop layer, as shown by block 810. The material used for the sacrificial layer can be selected to have a CMP rate that is faster than the CMP rate of the CMP-stop layer, for example.
In operation block 812, a portion of the photoresist layer that is disposed on the reader stack is exposed. For example, a portion of the material along the sidewall of the photoresist may be removed by a milling operation. Once the photoresist is exposed, the photoresist is removed, as shown by operation block 814. Operation block 816 shows that a cap on the reader can have a thickness of approximately 0.5 to 5.0 nanometers, depending on the desired design.
The processes and structures described above can be beneficial for different reasons. For example, the process described herein allows a long SAF reader to be formed. Moreover, in accordance with certain embodiments, a long SAF reader with a substantially vertical back edge can be formed. Another way to state this is that the back edge of the read stack and the backfill layer can form an angle of approximately 90 degrees.
In certain embodiments, a thin cap layer over a reader stack may be formed. The thin cap layer can be formed consistently from wafer to wafer by the process described herein because the CMP process can be controlled. The “knock-off” process described herein allows a thin cap layer to be used over the reader stack while a thin cap has been more difficult to implement with a process often referred to as a photoresist “lift-off” process.
It is noted that many of the structures, materials, and acts recited herein can be recited as means for performing a function or step for performing a function. Therefore, it should be understood that such language is entitled to cover all such structures, materials, or acts disclosed within this specification and their equivalents, including any matter incorporated by reference.
It is thought that the apparatuses and methods of embodiments described herein will be understood from this specification. While the above description is a complete description of specific embodiments, the above description should not be taken as limiting the scope of the patent as defined by the claims.
Singleton, Eric Walter, McKinlay, Shaun Eric, Wakeham, Stacey Christine
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