Techniques are described for forming a waveguide photodetector. In one example, a method of forming a waveguide photodetector includes forming a waveguide on a substrate, e.g., silicon on insulator, depositing a first oxide coating over the waveguide and on the SOI substrate, creating a seed window through the first oxide coating to a bulk silicon layer of the SOI substrate, depositing a photodetector material into the seed window and on top of the first oxide coating over the waveguide, depositing a second oxide coating over the photodetector material and over the first oxide coating deposited over the waveguide and on the SOI substrate, and applying thermal energy to liquefy the photodetector material.
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1. A waveguide photodetector comprising:
a first channel waveguide extending a first length along a substrate;
a second channel waveguide extending a second length along the substrate,
wherein the second channel waveguide has a first portion, a second portion, a top region, a first side region, and a second side region, and
wherein the first channel waveguide and the second channel waveguide are physically separated from one another by a gap;
a waveguide film disposed over a portion of the first channel waveguide, the first portion of the second channel waveguide, and the gap;
a photodetector material disposed over the top region, the first side region, and the second side region of the second portion of the second channel waveguide, wherein the photodetector material forms a ridge encapsulating the second channel waveguide; and
a dielectric film disposed between the second portion of the second channel waveguide and the photodetector material;
the second silicon channel waveguide completely isolated from the other silicon material of the SOI substrate.
7. A waveguide photodetector comprising:
a first channel waveguide extending a first length along a substrate;
a second channel waveguide extending a second length along the substrate,
wherein the second channel waveguide has a first portion, a second portion, a top region, a first side region, and a second side region, and
wherein the first channel waveguide and the second channel waveguide are physically separated from one another by a gap;
a waveguide film disposed over a portion of the first channel waveguide, the first portion of second channel waveguide, and the gap;
a photodetector material that is disposed over the top region but is not adjacent the first side region or the second side region of the second portion of the second channel waveguide, wherein the photodetector material forms a slab loaded over the second channel waveguide; and
a dielectric film disposed between the second portion of the second channel waveguide and the photodetector material;
the second silicon channel waveguide completely isolated from the other silicon material of the SOI substrate.
2. The waveguide photodetector of
3. The waveguide photodetector of
4. The waveguide photodetector of
5. The waveguide photodetector of
6. The waveguide photodetector of
wherein the waveguide film has a first end, a middle region that is disposed over the gap, a second end, and a width,
wherein the width of the waveguide film is greatest at the middle region,
wherein the width increases from the first end to the middle region, and
wherein the width decreases from the middle region to the second end.
8. The waveguide photodetector of
9. The waveguide photodetector of
10. The waveguide photodetector of
11. The waveguide photodetector of
12. The waveguide photodetector of
wherein the waveguide film has a first end, a middle region that is disposed over the gap, a second end, and a width,
wherein the width of the waveguide film is greatest at the middle region,
wherein the width increases from the first end to the middle region, and
wherein the width decreases from the middle region to the second end.
13. The waveguide photodetector of
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This application is a national stage application of PCT Application No. PCT/CN2011/084418, filed on Dec. 22, 2011, which claims the benefit of U.S. Provisional Application No. 61/426,402, entitled “Germanium-loaded silicon waveguide photodetector and the way of making,” by Bing Li, and filed on Dec. 22, 2010, the entire content of which is incorporated herein by reference.
The disclosure relates to optoelectronic devices and, more particularly, to waveguide photodetectors that convert optical signals into electrical signals.
In optical communication systems, optical waveguides provide a transmission channel for guiding an optical signal produced by a light source, e.g., a laser, at one end of the system to a detector, e.g., a photodetector, at the other end of the system. The photodetector material, an active region, absorbs energy from the photons of the transmitted optical signal, which, in response, excites charge carriers, e.g., electrons and holes. With the application of a reverse bias voltage, the excited charge carriers are attracted to contacts on the photodetector, thereby creating an electrical current that corresponds to the optical signal. In this manner, the photodetector converts an optical signal into an electrical signal.
Many optical communication systems utilize long-wavelength optical signals, e.g., 1310 nanometers (nm). Because silicon does not respond to long-wavelength signals, other materials, e.g., germanium, need to be added to the photodetector. For example, due to its potential for being grown on top of silicon, germanium is an appropriate choice for a photodetector if a monolithically integrated photodetector and silicon-on-insulator (“SOI”) photonic device is needed.
The lattice constant refers to the distance between unit cells in a crystal lattice. The lattice constant of the germanium is not perfectly matched with the lattice constant of silicon; the lattice constant of germanium is slightly larger than that of silicon. The mismatch between the lattice constants of germanium and silicon presents problems for using regular epitaxial growth (“EPI”) technique for growing crystals. Currently, two main methods have been heavily studied to make single crystal germanium film on top of silicon substrates: 1) using a buffer layer and post-process after selective epitaxial growth (“SEG”), and 2) using the rapid melt growth (“RMG”) technique. Between these two methods, RMG has better process compatibility but has a limitation on the structures that can be constructed.
In the buffer layer technique, a thin layer of amorphous germanium is deposited onto the silicon. Although the germanium layer created using the buffer layer technique may be thicker than the layer created using other techniques, the resulting germanium layer has defects because the initial crystal layer was not initially perfect. Defects in the photodetector are undesirable because the defects function as impurities inside the crystal materials that can generate free carriers and cause leakage current even when no light is present. The leakage current may cause noise and false signals.
In the RMG technique, germanium is not grown directly on top of the silicon. Instead, poly-germanium is deposited and then a silicon-dioxide coating is applied that surrounds the poly-germanium. The main issue with using RMG to make a waveguide photodetector stems from the nature of the RMG method itself. The RMG method requires a micro-furnace formed by the silicon-dioxide coating surrounding the deposited poly-germanium. Silicon-dioxide is a low index material, which makes it difficult to couple the light into the resulting high index single crystal germanium. A significant amount of photons are refracted due to the difference in the two indices, resulting in energy not being coupled to the photodetector. The coupling problem can be seen in prior efforts that use the RMG method to integrate germanium with silicon for optical devices, e.g., FIG. 1F in U.S. Pat. No. 7,418,166.
In general, this disclosure describes a germanium-loaded silicon waveguide photodetector and a method of making such a waveguide photodetector. In particular, this disclosure describes a modified Rapid Melt Growth technique for creating a waveguide photodetector that provides a very small germanium seed coupled directly to a portion of the bulk silicon of a silicon wafer. By providing a very small germanium seed coupled directly to the silicon, fewer defects are created in the germanium after the germanium seed has crystallized, thereby improving the leakage current characteristics of the resulting waveguide photodetector.
In one embodiment, this disclosure is directed to a method of forming a waveguide photodetector. The method comprises forming a waveguide on a substrate, depositing a first oxide coating over the waveguide and on the substrate, creating a seed window through the first oxide coating to a bulk silicon layer of the substrate, depositing a photodetector material into the seed window and on top of the first oxide coating over the waveguide, depositing a second oxide coating over the photodetector material and over the first oxide coating deposited over the waveguide and on the substrate, and applying thermal energy to liquefy the photodetector material. The method further includes cooling the photodetector material to begin crystallization, and then depositing a poly-silicon layer on top of the waveguide.
In another embodiment, this disclosure is directed to a waveguide photodetector comprising a first channel waveguide extending a first length along a substrate and a second channel waveguide extending a second length along the substrate, wherein the second channel waveguide has a first portion, a second portion, a top region, a first side region, and a second side region, and wherein the first channel waveguide and the second channel waveguide are physically separated from one another by a gap. The waveguide photodetector further comprises a waveguide film disposed over a portion of the first channel waveguide, the first portion of second channel waveguide, and the gap. The waveguide photodetector further comprises a photodetector material disposed over the top region, the first side region, and the second side region of the second portion of the second channel waveguide, wherein the photodetector material forms a ridge. The waveguide photodetector further comprises a dielectric film disposed between the second portion of the second channel waveguide and the photodetector material.
In another embodiment, this disclosure is directed to a waveguide photodetector comprising a first channel waveguide extending a first length along a substrate and a second channel waveguide extending a second length along the substrate, wherein the second channel waveguide has a first portion, a second portion, a top region, a first side region, and a second side region, and wherein the first channel waveguide and the second channel waveguide are physically separated from one another by a gap. The waveguide photodetector further comprises a waveguide film disposed over a portion of the first channel waveguide, the first portion of second channel waveguide, and the gap. The waveguide photodetector further comprises a photodetector material that is disposed over the top region but is not adjacent the first side region or the second side region of the second portion of the second channel waveguide, wherein the photodetector material forms a slab. The waveguide photodetector further comprises a dielectric film disposed between the second portion of the second channel waveguide and the photodetector material.
The details of one or more aspects of the disclosure are set forth in the accompanying drawings and the description below. Other features, objects, and advantages will be apparent from the description and drawings, and from the claims.
This disclosure describes a modified Rapid Melt Growth technique for creating a waveguide photodetector that provides a very small germanium seed coupled directly to a portion of the bulk silicon of a silicon wafer. By providing a very small germanium seed coupled directly to the silicon, fewer defects are created in the germanium after the germanium seed has crystallized, thereby improving the leakage current characteristics of the resulting waveguide photodetector.
Incoming lightwave 16, e.g., an optical signal, is fed through silicon channel waveguide 18, having length L1, on the left-hand side of waveguide photodetector 10 of
In accordance with this disclosure, a gap is created between silicon channel waveguide 18 and silicon channel waveguide 24, namely gap 36. In other words, the two silicon channel waveguides 18, 24 are physically separated by gap 36. In one example, gap 36 is filled by field oxide, e.g., silicon dioxide or other suitable dielectrics. Gap 36 is important to the fabrication process of the waveguide photodetector, which is described in more detail below with respect to
Referring still to
As seen in the example configuration depicted in
As the width of silicon channel waveguide 18 decreases, lightwave 16 gradually migrates into poly-silicon film waveguide 38 via adiabatic mode conversion and crosses gap 36. After crossing gap 36, the width of poly-silicon film waveguide 38 decreases and the light from lightwave 16 gradually migrates into silicon channel waveguide 24. Lightwave 16 finally propagates into germanium encapsulated active region 40 of photodetector 12 via silicon channel waveguide 24 and is converted to an electrical signal.
As seen in
Photodetector 12 includes P-type doping region 44, N-type doping region 46, and intrinsic region 48 (defined by the region between the two lines of small circles in
As seen in
The waveguide photodetector techniques described in this disclosure solve the coupling issues from the silicon channel waveguide to the germanium material that has to be isolated by oxide during the RMG process. Using the techniques of this disclosure, coupling is achieved via leaky mode coupling. That is, the guiding mode in the feed-in silicon channel waveguide 24, which later becomes the center silicon rib encapsulated by the loaded germanium, leaks into the germanium film. As a result of the absorption of the photon energy by the germanium, the coupling occurs continuously from silicon to germanium along the waveguide. It should be noted that the coupling is advantageously wavelength insensitive.
The intrinsic region of the structure shown in
The structure shown in
After the modified RMG process described above is complete and the crystallized germanium has formed, a poly-silicon layer is deposited on top of silicon channel waveguides 18, 24, thereby forming poly-silicon film waveguide 38 (
The implant process may include a Rapid Thermal Annealing (RTA) process. Because the RTA process affects the RMG, implants may be necessary. The thermal process of the RMG (heat than cool) may have to wait and proceed in conjunction with the RTA.
In contrast to the existing RMG and integration processes, the isolated center silicon rib is also encapsulated inside the micro-furnace. The isolated center silicon rib functions as the lightwave feed-in waveguide in the later detecting operation. Due to the fact the silicon rib is thermally isolated by the oxide as a result of the oxide in gap 36, the silicon rib will not affect the temperature gradient required by the RMG process, which requires that the cooling start from the root of the seed window where it is exposed to the bulk silicon of the wafer.
Various aspects of the disclosure have been described. These and other aspects are within the scope of the following claims.
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