A method and apparatus for simultaneously removing conductive materials from a microelectronic substrate. A method in accordance with one embodiment of the invention includes contacting a surface of a microelectronic substrate with an electrolytic liquid, the microelectronic substrate having first and second different conductive materials. The method can further include controlling a difference between a first open circuit potential of the first conducive material and a second open circuit potential of the second conductive material by selecting a ph of the electrolytic liquid. The method can further include simultaneously removing at least portions of the first and second conductive materials by passing a varying electrical signal through the electrolytic liquid and the conductive materials. Accordingly, the effects of galvanic interactions between the two conductive materials can be reduced and/or eliminated.
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9. A method for processing a microelectronic substrate, the method comprising:
providing a microelectronic substrate including a first conductive material and a second conductive material different than the first conductive material;
disposing on the microelectronic substrate an electrolytic liquid having a ph selected at least partially based on an absolute value of a difference between a first open circuit potential of the first conductive material at the ph and a second open circuit potential of the second conductive material at the ph; and
simultaneously removing at least portions of the first and second conductive materials from the microelectronic substrate while passing electrical current through the electrolytic liquid and the first and second conductive materials and while the electrolytic liquid is in contact with the microelectronic substrate.
1. A method for processing a microelectronic substrate, the method comprising:
selecting a ph based at least partially on an absolute value of a difference between a first open circuit potential of a second conductive material at the ph and a second open circuit potential of a second conductive material at the ph, wherein the second conductive material is different than the first conductive material;
contacting a surface of a microelectronic substrate with an electrolytic liquid having the selected ph, wherein the microelectronic substrate includes the first and second conductive materials; and
simultaneously removing at least portions of the first and second conductive materials from the microelectronic substrate while passing electrical current through the electrolytic liquid and the first and second conductive materials and while the electrolytic liquid is in contact with the microelectronic substrate.
2. The method of
the first conductive material includes tungsten; and
the second conductive material includes copper.
3. The method of
from a first electrode spaced apart from the microelectronic substrate, through the electrolytic liquid to the microelectronic substrate; and
from the microelectronic substrate, through the electrolytic liquid to a second electrode spaced apart from the first electrode and spaced apart from the microelectronic substrate.
4. The method of
from a first electrode spaced apart from the microelectronic substrate, through the electrolytic liquid to the microelectronic substrate; and
from the microelectronic substrate to a second electrode spaced apart from the first electrode and in contact with the microelectronic substrate.
5. The method of
6. The method of
the first conductive material of the microelectronic substrate is a barrier layer material; and
the second conductive material of the microelectronic substrate is a blanket fill material.
7. The method of
8. The method of
10. The method of
the first conductive material includes tungsten; and
the second conductive material includes copper.
12. The method of
the first conductive material of the microelectronic substrate is a barrier layer materials; and
the second conductive material of the microelectronic substrate is a blanket fill material.
13. The method of
14. The method of
15. The method of
16. The method of
17. The method of
18. The method of
19. The method of
20. The method of
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This application is a continuation of U.S. application Ser. No. 11/844,459, now abandoned, which is a continuation of U.S. application Ser. No. 10/923,359 filed Aug. 20, 2004, now abandoned, which is a divisional of U.S. application Ser. No. 10/230,602 filed Aug. 29, 2002, now U.S. Pat. No. 7,129,160 issued Oct. 31, 2006, each of which is incorporated herein by reference in their entirety.
This application is related to the following U.S. patent applications, all of which are incorporated herein by reference: Ser. No. 09/651 779 filed Aug. 30, 2000 now U.S. Pat. No. 7,074,113 issued Jul. 11, 2006; Ser. No. 09/651,808 filed Aug. 30, 2000, now U.S. Pat. No. 6,602,117 issued Aug. 5, 2003; Ser. No. 09/653,392 filed Aug. 31, 2000, now U.S. Pat. No. 6,551,935 issued Apr. 22, 2003; Ser. No. 09/888,084 filed Jun. 21,2001, now U.S. Pat. No. 7,112,121 issued Sep. 26, 2006; Ser. No. 09/887,767 filed Jun. 21, 2001, now U.S. Pat. No. 7,094,131 issued Aug. 22, 2006; and Ser. No. 09/888,002 filed Jun. 21, 2001, now U.S. Pat. No. 7,160,176 issued Jan. 9, 2007. Also incorporated herein by reference are the following U.S. patent applications Ser. No.: 10/230,970 filed Aug. 29, 2002, now U.S. Pat. No. 7,220,166 issued May, 22, 2007; application Ser. No. 10/230,972 filed Aug. 29, 2002, now U.S. Pat. No. 7,134,934 issued Nov. 14, 2006; application Ser. No. 10/230,973 filed Aug. 29, 2002, now U.S. Pat. No. 7,153,195 issued Dec. 26, 2006; applicaton Ser. No. 10/230,463 filed Aug. 29, 2002, now U.S. Pat. No. 7,192.335 issued Mar. 20, 2007; and Pat. No. 10/230,628 filed Aug. 29, 2002 now U.S. Pat. No. 7,078,308 issued Jul. 18, 2006.
The present disclosure is directed toward methods and apparatuses for simultaneously removing multiple conductive materials from microelectronic substrates.
Microelectronic substrates and substrate assemblies typically include a semiconductor material having features, such as memory cells, that are linked with conductive lines. The conductive lines can be formed by first forming trenches or other recesses in the semiconductor material and then overlaying a conductive material (such as a metal) in the trenches. The conductive material is then selectively removed to leave conductive lines or vias extending from one feature in the semiconductor material to another.
In a typical existing process, two separate chemical-mechanical planarization (CMP) steps are used to remove the excess portions of the conductive material 15 and the barrier layer 14 from the microelectronic substrate 10. In one step, a first slurry and polishing pad are used to remove the conductive material 15 overlying the barrier layer 14 external to the aperture 16, thus exposing the barrier layer 14. In a separate step, a second slurry and a second polishing pad are then used to remove the barrier layer 14 (and the remaining conductive material 15) external to the aperture 16. The resulting conductive line 8 includes the conductive material 15 surrounded by a lining formed by the barrier layer 14.
One drawback with the foregoing process is that high downforces are typically required to remove copper and tantalum from the microelectronic substrate 10. High downforces can cause other portions of the microelectronic substrate 10 to become dished or eroded, and/or can smear structures in other parts of the microelectronic substrate 10. A further drawback is that high downforces typically are not compatible with soft substrate materials. However, it is often desirable to use soft materials, such as ultra low dielectric materials, around the conductive features to reduce and/or eliminate electrical coupling between these features.
The present invention is directed toward methods and apparatuses for simultaneously removing multiple conductive materials from a microelectronic substrate. A method in accordance with one aspect of the invention includes contacting a surface of a microelectronic substrate with an electrolytic liquid, the microelectronic substrate having a first conductive material and a second conductive material different than the first. The method can still further include controlling an absolute value of a difference between a first open circuit potential of the first conductive material and a second open circuit potential of the second conductive material by selecting a pH of the electrolytic liquid. The method can further include simultaneously removing at least portions of the first and second conductive materials by passing a varying electrical signal through the electrolytic liquid and the conductive materials while the electrolytic liquid contacts the microelectronic substrate.
In a further aspect of the invention, wherein the first conductive material includes tungsten and the second conductive material includes copper, the method can include controlling an absolute value of a difference between the first open circuit potential and the second open circuit potential to be about 0.50 volts or less by selecting the pH of the electrolytic liquid to be from about 2 to about 5. The conductive materials can be removed simultaneously by passing an electrical signal from a first electrode spaced apart from the microelectronic substrate, through the electrolytic liquid to the first and second conductive materials and from the first and second conductive materials through the electrolytic liquid to a second electrode spaced apart from the first electrode and spaced apart from the microelectronic substrate.
A method in accordance with another aspect of the invention includes providing a microelectronic substrate having a first conductive material and a second conductive material different than the first. The method can further include disposing on the microelectronic substrate an electrolytic liquid having a pH that controls a difference between a first open circuit potential of the first conductive material and a second open circuit potential on the second conductive material. The method can further include simultaneously removing at least portions of the first and second conductive materials by passing a variable electrical signal through the electrolytic liquid and the conductive materials while the electrolytic liquid contacts the microelectronic substrate.
An electrolytic liquid in accordance with another embodiment of the invention can include a liquid carrier and an electrolyte disposed in the liquid carrier. The electrolyte can be configured to transmit electrical signals from an electrode to the first and second conductive materials of the microelectronic substrate. A pH of the electrolytic liquid can be from about 2 to about 5.
The present disclosure describes methods and apparatuses for removing conductive materials from a microelectronic substrate. The term “microelectronic substrate” is used throughout to include a substrate upon which and/or in which microelectronic circuits or components, data storage elements or layers, and/or micro-mechanical elements are fabricated. Features in the substrate can include submicron features (having submicron dimensions ranging from, for example, 0.1 micron to 0.75 micron) such as trenches, vias, lines and holes. It will be appreciated that several of the details set forth below are provided to describe the following embodiments in a manner sufficient to enable a person skilled in the relevant art to make and use the disclosed embodiments. Several of the details and advantages described below, however, may not be necessary to practice certain embodiments of the invention. Additionally, the invention can include other embodiments that are within the scope of the claims but are not described in detail with respect to
One approach for addressing some of the drawbacks described above with reference to
To form an isolated conductive line within the aperture 216, the first conductive material 218 and second conductive material 219 external to the aperture 216 are typically removed. In one embodiment, the second conductive material 209 is removed using a CMP process. In other embodiments, an electrochemical-mechanical polishing (ECMP) process or an electrolytic process is used to remove the second conductive material 209. An advantage of electrolytic and ECMP processes is that the downforce applied to the microelectronic substrate 210 during processing can be reduced or eliminated. Apparatuses for performing these processes are described in greater detail below with reference to
Referring now to
In a further aspect of this embodiment, the pH of the electrolytic liquid 231 is selected to control the difference between the open circuit potential of the first conductive material 218 and the open circuit potential of the second conductive material 209. As used herein, the difference in open circuit potentials between the first conductive material 218 and the second conductive material 209 refers to the difference in electrical potential that would result when measuring the voltage difference between the first conductive material 218 and the second conductive material 209 in the presence of the electrolytic liquid 231, but in the absence of any current applied by the signal transmitter 221. In a particular aspect of this embodiment, for example, when the first conductive material 218 includes tungsten and the second conductive material 209 includes copper, the pH of the electrolytic liquid 231 can be selected to be from about 2 to about 5 to produce a difference in open circuit potential of from about 0.50 volts to about −0.50 volts. In other words, the absolute value of the difference in open circuit potential can be about 0.50 volts or less. In other embodiments, the absolute value of the difference in open circuit potential can be about 0.25 volts or less, for example, 0.15 volts or less. In still further embodiments, the pH of the electrolytic liquid 231 can have other values to produce near-zero open circuit potential differentials for other combinations of first conductive materials 218 and second conductive materials 209. For example, in one embodiment, the electrolytic liquid 231 can have a pH of from about 0 to about 7.
In any of the foregoing embodiments, the first and second conductive materials 218, 209 can be removed simultaneously without necessarily being removed at the same rates. For example, in one embodiment for which the first conductive material 218 includes tungsten or a tungsten compound and the second conductive material 209 includes copper, the copper can be removed at about four times the rate at which the tungsten or tungsten compound is removed. In other embodiments, the first and second conductive materials 218, 209 can be removed at rates that vary by greater or lesser amounts.
In one embodiment, the pH of the electrolytic liquid 231 can be controlled by disposing an acid in the electrolytic liquid 231. Accordingly, the electrolytic liquid 231 can include a liquid carrier (such as deionized water) and an acid such as nitric acid, acetic acid, hydrochloric acid, sulfuric acid, or phosphoric acid. In other embodiments, the electrolytic liquid 231 can include other acids. In addition to reducing the pH of the electrolytic liquid 231, the acid can provide ions to enhance the electrolytic action of the electrolytic liquid 231. In any of these embodiments, the electrolytic liquid 231 can also optionally include an inhibitor, such as benzotriazole (BTA) to produce more uniform material removal. The electrolytic liquid 231 can also include oxidizers, such as hydroxylamine, peroxide or ammonium persulfate. In another embodiment, the oxidizers can be eliminated, for example, when the electrolytic action provided by the electrodes 220 is sufficient to oxidize the conductive materials 218 and 209.
In any of the foregoing embodiments, the first conductive material 218 and the second conductive material 209 external to the recess 216 can be removed, producing a microelectronic substrate 210 having an embedded conductive structure 208, as shown in
One feature of an embodiment of the method described above with reference to
In the embodiments described above with reference to
The apparatus 460 can further include a first electrode 420a and a second electrode 420b (referred to collectively as electrodes 420) supported relative to the microelectronic substrate 210 by a support arm 424. In one aspect of this embodiment, the support arm 424 is coupled to an electrode drive unit 423 for moving the electrodes 420 relative to the microelectronic substrate 210. For example, the electrode drive unit 423 can move the electrodes 420 toward and away from the conductive portion 211 of the microelectronic substrate 210, (as indicated by arrow “C”), and/or transversely (as indicated by arrow “D”) in a plane generally parallel to the conductive portion 211. In other embodiments, the electrode drive unit 423 can move the electrodes 420 in other fashions, or the electrode drive unit 423 can be eliminated when the substrate drive unit 441 provides sufficient relative motion between the substrate 210 and the electrodes 420.
In either embodiment described above with reference to
In one aspect of an embodiment of the apparatus 460 shown in
In one aspect of the embodiment shown in
In another aspect of an embodiment shown in
The apparatus 660 can also have a plurality of rollers to guide, position and hold the polishing pad 683 over the top-panel 681. The rollers can include a supply roller 687, first and second idler rollers 684a and 684b, first and second guide rollers 685a and 685b, and a take-up roller 686. The supply roller 687 carries an unused or preoperative portion of the polishing pad 683, and the take-up roller 686 carries a used or postoperative portion of the polishing pad 683. Additionally, the first idler roller 684a and the first guide roller 685a can stretch the polishing pad 683 over the top-panel 681 to hold the polishing pad 683 stationary during operation. A motor (not shown) drives at least one of the supply roller 687 and the take-up roller 686 to sequentially advance the polishing pad 683 across the top-panel 681. Accordingly, clean preoperative sections of the polishing pad 683 may be quickly substituted for used sections to provide a consistent surface for polishing and/or cleaning the microelectronic substrate 210.
The apparatus 660 can also have a carrier assembly 690 that controls and protects the microelectronic substrate 210 during polishing. The carrier assembly 690 can include a substrate holder 692 to pick up, hold and release the microelectronic substrate 210 at appropriate stages of the polishing process. The carrier assembly 690 can also have a support gantry 694 carrying a drive assembly 695 that can translate along the gantry 694. The drive assembly 695 can have an actuator 696, a drive shaft 697 coupled to the actuator 696, and an arm 698 projecting from the drive shaft 697. The arm 698 carries the substrate holder 692 via a terminal shaft 699 such that the drive assembly 695 orbits the substrate holder 692 about an axis E-E (as indicated by arrow “R1”). The terminal shaft 699 may also rotate the substrate holder 692 about its central axis F-F (as indicated by arrow “R2”).
The polishing pad 683 and a polishing liquid 689 define a polishing medium 682 that electrolytically, chemically-mechanically, and/or electro-chemically-mechanically removes material from the surface of the microelectronic substrate 210. In some embodiments, the polishing pad 683 may be a nonabrasive pad without abrasive particles, and the polishing liquid 689 can be a slurry with abrasive particles and chemicals to remove material from the microelectronic substrate 210. In other embodiments, the polishing pad 683 can be a fixed-abrasive polishing pad in which abrasive particles are fixedly bonded to a suspension medium. To polish the microelectronic substrate 210 with the apparatus 660, the carrier assembly 690 presses the microelectronic substrate 210 against a polishing surface 688 of the polishing pad 683 in the presence of the polishing liquid 689. The drive assembly 695 then orbits the substrate holder 692 about the axis E-E and optionally rotates the substrate holder 692 about the axis F-F to translate the substrate 210 across the polishing surface 688. As a result, the abrasive particles and/or the chemicals in the polishing medium 682 remove material from the surface of the microelectronic substrate 210 in a chemical and/or chemical-mechanical polishing process.
In a further aspect of this embodiment, the polishing liquid 689 can include an electrolyte for electrolytic processing or ECMP processing. In another embodiment, the apparatus 660 can include an electrolyte supply vessel 630 that delivers an electrolyte separately to the polishing surface 688 of the polishing pad 683 with a conduit 637, as described in greater detail below with reference to
The electrodes 720a and 720b can be electrically coupled to the microelectronic substrate 210 (
The foregoing apparatuses described above with reference to
The methods described above with reference to
From the foregoing, it will be appreciated that specific embodiments of the invention have been described herein for purposes of illustration, but that various modifications may be made without deviating from the spirit and scope of the invention. Accordingly, the invention is not limited except as by the appended claims.
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