An electronic device has an energy storage device and circuitry supplied with a storage device voltage from the energy storage device. A supervisor circuit enables the circuitry in response to the storage device exceeding an enable threshold voltage. The supervisor circuit detects a resistance parameter which is indicative of an internal resistance of the energy storage device and adjusts the enable threshold voltage based on the resistance parameter.
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20. A method for an electronic device comprising an energy storage device and circuitry supplied with a storage device voltage from the energy storage device; the method comprising:
detecting whether the storage device voltage exceeds an enable threshold voltage;
enabling the circuitry in response to the storage device voltage exceeding the enable threshold voltage;
detecting a resistance parameter indicative of an internal resistance of the energy storage device;
drawing a test current from the energy storage device for testing the internal resistance of the energy storage device;
coupling a plurality of capacitors and a plurality of switches to the energy storage device in a configuration for selecting whether the capacitors are coupled in parallel or coupled in series across the energy storage device; and
adjusting the enable threshold voltage based on the resistance parameter.
16. An electronic device comprising:
an energy storage device;
circuitry supplied with a storage device voltage from the energy storage device; and
a supervisor circuit configured to enable the circuitry in response to the storage device voltage exceeding an enable threshold voltage;
wherein the supervisor circuit is configured to detect a resistance parameter indicative of an internal resistance of the energy storage device and to adjust the enable threshold voltage based on the resistance parameter;
wherein the supervisor circuit comprises a test current generator configured to draw a test current from the energy storage device for testing the internal resistance of the energy storage device; and
wherein the resistance parameter comprises a count value representing a time taken for the storage device voltage to rise to a sample voltage level following the voltage drop caused by the test current.
1. An electronic device comprising:
an energy storage device;
circuitry supplied with a storage device voltage from the energy storage device; and
a supervisor circuit configured to enable the circuitry in response to the storage device voltage exceeding an enable threshold voltage;
wherein the supervisor circuit is configured to detect a resistance parameter indicative of an internal resistance of the energy storage device and to adjust the enable threshold voltage based on the resistance parameter;
wherein the supervisor circuit comprises a test current generator configured to draw a test current from the energy storage device for testing the internal resistance of the energy storage device; and
wherein the test current generator comprises a plurality of capacitors and a plurality of switches for selecting whether the capacitors are coupled in parallel or coupled in series across the energy storage device.
19. An electronic device comprising:
energy storage means for storing energy;
circuit means for being supplied with a storage device voltage from the energy storage means; and
supervising means for enabling the circuit means in response to the storage device voltage exceeding an enable threshold voltage;
wherein the supervising means is configured to detect a resistance parameter indicative of an internal resistance of the energy storage means and to adjust the enable threshold voltage based on the resistance parameter;
wherein the supervising means comprises a test current generating means configured to draw a test current from the energy storage means for testing the internal resistance of the energy storage means; and
wherein the test current generating means comprises a plurality of capacitors and a plurality of switches for selecting whether the capacitors are coupled in parallel or coupled in series across the energy storage means.
2. The electronic device according to
3. The electronic device according to
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5. The electronic device according to
6. The electronic device according to
7. The electronic device according to
8. The electronic device according to
if the storage device voltage no longer exceeds the enable voltage threshold before the end of the delay period, then the supervisor circuit is configured to inhibit enabling of the circuitry.
9. The electronic device according to
10. The electronic device according to
11. The electronic device according to
12. The electronic device according to
wherein the test current generator is configured to generate the test current by switching the plurality of switches from a first state in which the plurality of capacitors are coupled in series across the energy storage device to a second state in which the plurality of capacitors are coupled in parallel across the energy storage device.
13. The electronic device according to
14. The electronic device according to
15. The electronic device according to
17. The electronic device according to
18. The electronic device according to
wherein a clock generator for generating the count clock signal is powered by a regulated voltage.
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The present technique relates to the field of electronic devices. More particularly, the technique relates to electronic devices having an energy storage device in which circuitry is enabled when a storage device voltage from the energy storage device exceeds an enable threshold voltage.
An electronic device may have an energy storage device, such as a battery or a capacitor. A storage device voltage supplied from the energy storage device may vary over time, for example depending on temperature or on the energy consumption of the circuitry supplied with the voltage. The circuitry may require a minimum voltage to operate, and so the circuitry may be enabled only if the storage device voltage exceeds an enable threshold voltage.
Viewed from one aspect, the present technique provides an electronic device comprising:
an energy storage device;
circuitry supplied with a storage device voltage from the energy storage device; and
a supervisor circuit configured to enable the circuitry in response to the storage device voltage exceeding an enable threshold voltage;
wherein the supervisor circuit is configured to detect a resistance parameter indicative of an internal resistance of the energy storage device and to adjust the enable threshold voltage based on the resistance parameter.
In known systems, the enable threshold voltage is typically a fixed threshold set to accommodate worst case conditions. When the storage device voltage exceeds the threshold and the circuitry is enabled, a current is drawn from the energy storage device which causes an immediate drop in the storage device voltage. The voltage drop is proportional to the internal resistance of the energy storage device. The internal resistance can vary, because for example the resistance may be temperature dependent and may increase over time as the energy storage device is charged and discharged. Therefore, typically the enable threshold voltage is set with a margin to account for the voltage drop which will occur on enabling the circuitry in the worst case scenario expected over the lifetime of the storage device. This extra margin reduces the usable range of voltages at which the circuitry can operate and delays the circuitry being enabled so that less efficient use is made of the energy available.
To address these issues, the present technique provides a supervisor circuit which detects a resistance parameter indicative of an internal resistance of the energy storage device and which adjusts the enable threshold voltage based on the resistance parameter. This allows the enable threshold voltage to be adapted to the changing internal resistance of the energy storage device, avoiding the need for any additional margin in the enable threshold voltage. This allows the circuitry to be enabled earlier without a delay caused by the margin. Also, by accounting for the resistance of the energy storage device, the risk of the circuitry oscillating between enabled and disabled states can be reduced.
The energy storage device may be a battery or may be a capacitor or supercapacitor. The internal resistance of a capacitor tends to remain relatively constant with time (unlike a battery where the resistance tends to increase with increasing numbers of charge/discharge cycles). Even if the resistance does not vary significantly over time, the present technique may still be useful since the circuitry and supervisor circuit may be designed for use with a range of different types of energy storage devices which may have different resistances, and the present technique allows the supervisor circuit to automatically adapt to the particular resistance of the energy storage device that has been selected. This avoids the need to margin the enable threshold voltage based on the energy storage device with the worst case resistance.
However, the present technique is particularly useful if the energy storage device is a battery. Battery health declines with discharge cycles and so the internal resistance of the battery may increase over time. By adapting the enable threshold voltage to the internal resistance of the battery, it is not necessary to margin he threshold based on the worst case resistance expected, which would cause a significant delay in enabling the circuitry when the battery is near the start of its lifetime. This technique is particularly advantageous for small electronic devices such as wireless sensor nodes which employ small batteries having a high internal resistance, e.g. of the order of 7 kΩ.
The energy storage device may be provided with an energy harvesting unit for harvesting ambient energy which is used to charge the energy storage device. Depending on the amount of ambient energy available, the voltage provided from the storage device may vary, and so devices with energy harvesting units may often apply an enable voltage threshold for determining whether to enable the circuitry. Hence, the present technique is particularly useful for devices having an energy harvesting unit, such as wireless sensor nodes. The energy harvesting unit may for example comprise a photovoltaic cell for harvesting energy from solar radiation, a thermoelectric device for harvesting energy from temperature gradients, a vibration harvester for harvesting energy from acoustic or mechanical vibrations, or an electromagnetic energy harvester for harvesting energy from electromagnetic radiation such as radio waves.
The supervisor circuit may disable the circuitry in response to the storage device voltage dropping below a disable threshold voltage. The disable threshold voltage may be less than the enable threshold voltage. This provides some hysteresis to avoid oscillation where the circuitry is repeatedly enabled and disabled in quick succession. With previous systems using a fixed threshold, a large margin between the enable and disable thresholds is required to ensure that when the circuitry is enabled, the IR voltage drop does not cause the storage device voltage to drop below the disable threshold voltage even when the energy storage device has a very high resistance. By adapting the enable threshold voltage to the detected resistance parameter, it is not necessary to provide such a margin, so that the enabling of the circuitry is not delayed unnecessary and so the total amount of time when the voltage is high enough to use the circuitry can be increased.
The supervising circuit may adjust the enable threshold voltage in various ways. For example, the enable threshold voltage can be set to a value which corresponds to a sum of a target threshold voltage and a margin voltage, with the margin voltage depending on the resistance parameter. Hence, the target threshold voltage may be the effective threshold voltage at which it is desired to turn on the circuitry (in the ideal case assuming there is no IR drop), and the margin voltage represents the expected IR drop which would occur when the circuitry is enabled, so that even when the internal resistance increases, after enabling the circuitry the storage device voltage will settle at the effective threshold voltage. For example, the margin voltage may correspond to ISYSTEM×RSTORAGE, where ISYSTEM is the maximum current drawn by the circuitry when enabled and RSTORAGE is the internal resistance of the storage device. In small wireless systems, the current ISYSTEM when enabling the circuitry is typically well-defined since wireless sensor nodes tend to have a well-defined operation which does not vary significantly. Therefore, it is feasible to update the threshold voltage to the target threshold voltage plus ISYSTEM×RSTORAGE based on the measured resistance parameter representing RSTORAGE.
Although the enable threshold voltage may correspond to the sum of the target threshold voltage and a margin voltage, it is not necessary to actually perform this addition. Instead, the supervising circuit may have a range of threshold voltage levels available and may select one of these threshold voltages which is expected to correspond to the sum of the target threshold voltage of the margin voltage. For example the supervisor circuit may have a threshold voltage generator which generates multiple different threshold levels (for example, using a voltage divider). The resistance parameter may then be used to select one of the voltages generated by the threshold voltage generator, for use as the enable threshold voltage. The threshold voltage generator may be configured so that the relationship between the resistance parameter and the selected enable threshold voltage level tracks the expected sum of the target threshold voltage and the margin voltage when the margin voltage is proportional to the resistance.
The supervisor circuit may trigger the detection of the resistance parameter and adjustment of the enable threshold voltage at any time, for example periodically or in response to certain events. In one example, the detection of the resistance parameter and the adjustment of the enable threshold voltage may occur in response to the storage device voltage exceeding a current value of the enable threshold voltage. Hence, when the storage device voltage exceeds the current threshold and so the circuitry would normally be enabled at this point, the supervisor circuit detects the resistance parameter and adjusts the enable threshold voltage to reflect the measured resistance of the energy storage device. This avoids the need to repeatedly adjust the enable threshold when the voltage still remains below the previous threshold anyway, and also enables the circuitry for triggering the enable signal to be reused for also triggering the resistance monitoring. This approach may be useful for storage devices where the internal resistance is generally expected to increase with time (e.g. a battery for which the resistance increases with discharge cycles). However, if there is a likelihood that the resistance could sometimes decrease, then it may be useful to also perform further recalibrations of the enable threshold, for example triggered periodically, to ensure that the circuitry is not left permanently in the disabled state.
The supervisor circuit may implement a delay between the storage device voltage exceeding the enable threshold and enabling the circuitry. This can be useful for several reasons. Firstly, the circuitry may need to be reset before it is enabled and so the delay period provides time for this. Also, providing a delay helps guard against oscillations which can occur when the storage device voltage only temporarily rises above the enable threshold and then falls below it again. Hence, if the storage device voltage no longer exceeds the threshold by the end of the delay period, then enabling of the circuitry can be inhibited. This mechanism is also useful when the threshold voltage is being adjusted, since the adjustment to the threshold triggered by the storage device voltage rising above the previous threshold may cause the threshold to be set higher, so that by the end of the delay period the storage device voltage no longer exceeds the threshold. Hence, the delay provides time for the resistance monitoring to complete to avoid enabling the circuitry if the IR drop would cause the voltage to drop too low.
There may be various ways of measuring the resistance of the energy storage device. The supervisor circuit may have a test current generator which draws a test current from the energy storage device for testing the internal resistance of the energy storage device. When a test current is drawn, the response of the system to the test current may give an indication of the internal resistance.
Drawing a test current from the energy storage device may cause a voltage drop and if the circuitry is still connected to the storage device voltage then this could cause errors. Therefore, an isolation switch may be provided to isolate the circuitry from the storage device voltage when the test current is drawn from the energy storage device.
In one example, the monitored resistance parameter may indicate an amount by which the storage device drops when the test current is applied. The voltage drop may depend on the product of the amount of test current drawn and the internal resistance of the storage device, and so if the amount of test current is known then the internal resistance can be deduced.
Alternatively, the test current generator may include at least one capacitive element coupled across the energy storage device. When the test current is drawn, there may be a voltage drop, and then the storage device voltage may rise again with a rate that depends on both the capacitance of the at least one capacitive element and the internal resistance of the storage device. Hence, by measuring a parameter which depends on the rate at which the voltage rises, the internal resistance can be monitored.
For example, the resistance parameter may comprise a count value which represents a time taken for the storage device voltage to rise to a sample voltage level following the voltage drop caused by the test current. For example, the sample voltage level may be set to a fraction of a level that the storage device voltage had prior to drawing the test current. By setting the sample voltage level relative to the storage voltage level, variation in the storage voltage level does not affect the measured count value, which will depend on the RC time constant of the capacitive element and storage device, not on other factors affecting the voltage level such as temperature or circuit load. A counter may increment the count value in response to a count clock signal until the storage device voltage exceeds the sample of voltage level (the counter may be start counting either at the point when the voltage drops in response to the test current, or at a later point when the voltage rises above a count start threshold). A clock generator for generating the count clock signal may be powered by a regulated voltage provided by a voltage regulator, which is useful to prevent the clock frequency of the clock generator varying with system current consumption.
The test current may be generated in different ways. However, in one example the test current generator may have a number of capacitors and switches which can select whether the capacitors are coupled in parallel across the energy storage device or are coupled in series across the energy storage device. The test current generator may generate the test current by switching the switches from a first state in which the capacitors are coupled in series to a second state in which the capacitors are coupled in parallel. When in series, the capacitors are discharged and charge on the capacitors flows back to the energy storage device. When the capacitors are then switched to a parallel state, the storage device charges the capacitors and a relatively large current is drawn from the storage device. This test current can then be used to monitor the internal resistance. In the case where the resistance parameter represents the RC time constant, the capacitors used for generating the test current may also serve as the capacitive elements which provide the “C” part of the RC time constant.
Hence, prior to generating the test current, the test current generator may switch the switches from the second state in which the capacitors are coupled in parallel (e.g. the state remaining from a previous instance when the resistance of the storage device was monitored) to the first state in which the capacitors are coupled in series. If this is done suddenly in one step, there can be a large overshoot in the storage device voltage which could potentially damage the circuitry. To reduce the likelihood of damage, the capacitors can be switched from the second state to the first state in multiple steps with each step coupling only a subset of the capacitors together in series. By staggering the switching of the capacitors into the series state, damage to the circuitry can be reduced.
References to resistance in the present application should be interpreted as including monitoring of impedance. In general, the monitoring of resistance discussed in the embodiments below can be considered as detecting the impedance of the energy storage device at a relatively low frequency. In other systems it is possible to monitor the impedance at different frequencies and phases and set the voltage threshold based on the detected impedance.
Viewed from another aspect, the present technique provides an electronic device comprising:
energy storage means for storing energy;
circuit means for being supplied with a storage device voltage from the energy storage means; and
supervising means for enabling the circuit means in response to the storage device voltage exceeding an enable threshold voltage;
wherein the supervising means is configured to detect a resistance parameter indicative of an internal resistance of the energy storage means and to adjust the enable threshold voltage based on the resistance parameter.
Viewed from a further aspect, the present technique provides a method for an electronic device comprising an energy storage device and circuitry supplied with a storage device voltage from the energy storage device; the method comprising:
detecting whether the storage device voltage exceeds an enable threshold voltage;
enabling the circuitry in response to the storage device voltage exceeding the enable threshold voltage;
detecting a resistance parameter indicative of an internal resistance of the energy storage device; and
adjusting the enable threshold voltage based on the resistance parameter.
Further aspects, features and advantages of the present technique will be apparent from the following description of example embodiments which are to be read with reference to the accompanying drawings.
Miniature wireless sensor nodes are unique in that they employ very small batteries, such as thin film batteries, which have a high internal resistance RBAT (e.g. in the order of 7 kΩ) so there is a risk of large IR drops and spikes. Also, battery health declines with increasing numbers of discharge cycles, so that RBAT may increase for example from 7 kΩ to 31 kΩ over a 1000 discharge cycles. Battery internal resistance is also temperature dependent. Therefore, it is usual to provide a large hysteresis margin VHYST to accommodate the worst case battery internal resistance expected over its lifetime. However, for most of its lifetime the battery may have a lower resistance than this worst case resistance, and so most of the time the margin is unnecessary high, which delays enabling the circuitry, so that the circuitry 6 is idle even when the voltage would have been high enough to support the circuitry. Also, over time the resistance of the battery increases, and so with a fixed enable threshold the range of voltages VUSE at which the circuitry 6 can be enabled reduces, as shown in
The supervisor circuit 8 is shown in more detail at the bottom of
As shown in
The threshold voltage generator 23 similarly includes a chain of diode connected transistors. The voltage threshold generator 23 includes a leakage based voltage reference/divider and provides 64 possible analogue reference voltages from 1.06 volts to 1.28 volts for the adaptive voltage threshold. This design of reference generator 23 has been simulated as consuming 77 pA while providing 319 ppm/° C. TC and 0.17%/V line sensitivity (measured). The reference generator 23 has a zero-VTH NMOS transistor 32 at the top of the stack for leakage generation and diode connected PMOS transistors 34 which provide multiple outputs to a multiplexer 36 which selects a particular threshold voltage level depending on an input control signal 38. The control signal is dependent on the enable signal generated by the supervisor circuit and on the output of the resistance monitor.
When the divided voltage VDIV is greater than the threshold voltage VTH, the comparator separates a high comparator output signal which triggers the resistance monitor 26 to start detecting the internal resistance of the battery. The resistance monitor 26 includes capacitors which can be coupled in series or parallel to induce a test current which can be used to probe the internal resistance. This is described more below with reference to
The delay generator 24 uses a voltage reference VREF1 to drive a current source which generates a current IDELAY (3.3 nA in this example). The current is mirrored to a capacitor CDELAY. When the comparator output 22 switches high, the current IDELAY starts charging the capacitor CDELAY and eventually the voltage at the capacitor will rise above a second reference voltage VREF2 which is compared against the voltage at the capacitor using a comparator. When the voltage on the capacitor CDELAY exceeds VREF2, an enable trigger signal (enable_trigger) switches states and this flips the state of flip flop 42 to assert the enable signal to cause the circuitry 6 to be enabled. The first reference voltage VREF1 compensates the temperature dependence of the resistor charged by IDELAY to provide a temperature insensitive delay (0.9%/° C. TC, 9.7%/V line sensitivity, measured). The flip flop 42 is reset if the comparator output drops low before the end of the delay period, to inhibit enabling of the circuitry 6. It will be appreciated that other forms of delay generator 24 could also be provided.
Once all the capacitors are in series, a final step 4 is performed to simultaneously connect all the capacitors in parallel across the battery 4 (see step 4 at the bottom of
A ripple counter 56 is triggered to start counting clock cycles when the capacitors are switched in parallel at step 4. A comparator 54 compares a voltage VDC at a node between capacitor CDC4 and switch S4B with the sample voltage VSAMP and when VDC rises above VSAMP then this triggers a ripple counter 56 to stop counting clock cycles. Hence, the count value dout quantifies the time when VDC<VSAMP. Since VSAMP is relative to VBAT then the output dout is insensitive to VBAT. The output dout of the ripple counter is then used by the threshold generator 23 to select the threshold voltage. While
In
An isolating switch S1 is provided to isolate the circuitry 6 from the battery voltage VBAT when the resistance is being measured. By opening switch S1, the system is protected from the test induced voltage drop. Since the system operates from a decoupling capacitance (CDC0) during this time, the test event is kept short (for example less than 65 microseconds). Note that the test capacitors CDC1 to CDC4 act as standard decoupling capacitors during the normal operation of the circuitry 6.
Hence, in general the number of cycles counted by the ripple counter 56 is dependent on the internal resistance of the battery 4 because the rise time of the voltage is characterised by a time constant which depends on the capacitance of the capacitors and the resistance of battery 4.
The circuit shown in the above embodiments was fabricated in 180 nm CMOS. The battery supervisor circuit 8 was tested with a miniature 2 μAh thin-film battery (1.375×0.85 mm2) and a sensor system with ISYSTEM.MAX=11 μA. The battery supervisor circuit 8 draws 1 nA during battery monitoring and 10 nJ/conv. for RBAT detection.
The resistance monitor circuit 26 shown in
Although illustrative embodiments of the invention have been described in detail herein with reference to the accompanying drawings, it is to be understood that the invention is not limited to those precise embodiments, and that various changes and modifications can be effected therein by one skilled in the art without departing from the scope and spirit of the invention as defined by the appended claims.
Blaauw, David Theodore, Lee, In Hee, Lee, Yoonmyung, Sylvester, Dennis Michael
Patent | Priority | Assignee | Title |
9851410, | Nov 24 2014 | LANDIS+GYR TECHNOLOGY, INC | Techniques to provide a low capacity notification for an energy store device |
Patent | Priority | Assignee | Title |
5862515, | Feb 16 1996 | HIOKI DENKI KABUSHIKI KAISHA | Battery tester |
20040054503, | |||
20050194933, | |||
20080122399, | |||
20090212740, | |||
20090224771, | |||
20100224157, | |||
20120119745, |
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