A microelectronic structure includes a substrate having a first surface and a cavity extending into the substrate from the substrate first surface, a first microelectronic device and a second microelectronic device attached to the substrate first surface, and a bridge disposed within the substrate cavity and attached to the first microelectronic device and to the second microelectronic device. The bridge includes a plurality conductive vias extending from a first surface to an opposing second surface of the bridge, wherein the conductive vias are electrically coupled to deliver electrical signals from the substrate to the first microelectronic device and the second microelectronic device. The bridge further creates at least one electrical signal connection between the first microelectronic device and the second microelectronic device.
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1. A microelectronic structure comprising:
a microelectronic substrate having a cavity defined therein extending from a first surface of the microelectronic substrate, wherein the cavity includes at least one sidewall and a bottom surface, wherein the microelectronic substrate includes a plurality of conductive routes extending from the substrate first surface and a plurality of conductive routes extending from the substrate cavity bottom surface;
a bridge, disposed within the microelectronic substrate cavity, having a plurality of signal lines formed on or in a first surface of the bridge and a plurality of through-bridge conductive vias extending from the bridge first surface to an opposing second surface of the bridge, wherein the plurality of through-bridge conductive vias are electrically connected to the plurality of conductive routes extending from the microelectronic substrate bottom surface; and
a plurality of microelectronic devices, wherein each of the plurality of microelectronic devices are electrically connected to at least one of the plurality of conductive routes extending from the substrate first surface, at least one of the plurality of the bridge signal lines, and at least one of the plurality of through-bridge conductive vias.
11. A computing device, comprising:
a board;
a microelectronic device attached to the board; and
a microelectronic structure disposed within the microelectronic device, wherein the microelectronic structure comprises:
a microelectronic substrate having a cavity defined therein extending from a first surface of the microelectronic substrate, wherein the cavity includes at least one sidewall and a bottom surface, wherein the microelectronic substrate includes a plurality of conductive routes extending from the substrate first surface and a plurality of conductive routes extending from the substrate cavity bottom surface;
a bridge disposed within the microelectronic substrate having a plurality of signal lines formed on or in a first surface of the bridge and a plurality of through-bridge conductive vias extending from the bridge first surface to an opposing second surface of the bridge, wherein the plurality of through-bridge conductive vias are electrically connected to the plurality of conductive routes extending from the microelectronic substrate bottom surface; and
a plurality of microelectronic devices, wherein each of the plurality of microelectronic devices are electrically connected to at least one of the plurality of conductive routes extending from the substrate first surface, at least one of the plurality of the bridge signal lines, and at least one of the plurality of through-bridge conductive vias.
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Embodiments of the present description generally relate to the field of microelectronic package fabrication, and, more particularly, to a microelectronic structure including a bridge embedded in a substrate for electrical signal connection between microelectronic devices, wherein the bridge includes conductive vias extending through the bridge for electrical signal connection between the substrate and the microelectronic devices.
The microelectronic industry is continually striving to produce ever faster and smaller microelectronic packages for use in various electronic products. As part of this effort, microelectronic packages containing multiple devices, such a microelectronic dice, have been developed. These multiple microelectronic device packages are referred to in the art as multi-device or multi-chip packages (MCPs) and offer the potential for increased architectural flexibility at reduced cost, but must do so such that appropriate microelectronic device-to-microelectronic device interconnect densities are provided. As will be understood to those skilled in the art, interconnect density is an important consideration because an insufficient number of microelectronic device connections would limit the bandwidth capability for the affected microelectronic device interface, and thus would reduce the communication efficiency and capability between microelectronic devices.
The subject matter of the present disclosure is particularly pointed out and distinctly claimed in the concluding portion of the specification. The foregoing and other features of the present disclosure will become more fully apparent from the following description and appended claims, taken in conjunction with the accompanying drawings. It is understood that the accompanying drawings depict only several embodiments in accordance with the present disclosure and are, therefore, not to be considered limiting of its scope. The disclosure will be described with additional specificity and detail through use of the accompanying drawings, such that the advantages of the present disclosure can be more readily ascertained, in which:
In the following detailed description, reference is made to the accompanying drawings that show, by way of illustration, specific embodiments in which the claimed subject matter may be practiced. These embodiments are described in sufficient detail to enable those skilled in the art to practice the subject matter. It is to be understood that the various embodiments, although different, are not necessarily mutually exclusive. For example, a particular feature, structure, or characteristic described herein, in connection with one embodiment, may be implemented within other embodiments without departing from the spirit and scope of the claimed subject matter. References within this specification to “one embodiment” or “an embodiment” mean that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one implementation encompassed within the present description. Therefore, the use of the phrase “one embodiment” or “in an embodiment” does not necessarily refer to the same embodiment. In addition, it is to be understood that the location or arrangement of individual elements within each disclosed embodiment may be modified without departing from the spirit and scope of the claimed subject matter. The following detailed description is, therefore, not to be taken in a limiting sense, and the scope of the subject matter is defined only by the appended claims, appropriately interpreted, along with the full range of equivalents to which the appended claims are entitled. In the drawings, like numerals refer to the same or similar elements or functionality throughout the several views, and that elements depicted therein are not necessarily to scale with one another, rather individual elements may be enlarged or reduced in order to more easily comprehend the elements in the context of the present description.
The terms “over”, “to”, “between” and “on” as used herein may refer to a relative position of one layer with respect to other layers. One layer “over” or “on” another layer or bonded “to” another layer may be directly in contact with the other layer or may have one or more intervening layers. One layer “between” layers may be directly in contact with the layers or may have one or more intervening layers.
Embodiments of the present description include a microelectronic structure comprising a substrate having a first surface and a cavity extending into the substrate from the substrate first surface, a first microelectronic device and a second microelectronic device attached to the substrate first surface, and a bridge disposed within the substrate cavity and attached to the first microelectronic device and to the second microelectronic device. The bridge includes a plurality conductive vias extending from a first surface to an opposing second surface of the bridge, wherein the conductive vias are electrically coupled to deliver electrical signals from the substrate to the first microelectronic device and to the second microelectronic device. The bridge further creates at least one electrical signal connection between the first microelectronic device and the second microelectronic device.
Embodiments of the present description may enable density scaling of structures within a microelectronic package that may represent a significant improvement over existing technology generations by making use of silicon bridges (or bridges made of other materials) that are embedded in the microelectronic substrate. These bridges support dense microelectronic device-to-microelectronic device interconnect from a first microelectronic device edge to a second microelectronic device edge, and a number of signals lines through the bridge. Thus, a resulting microelectronic package may be considerably smaller than a microelectronic package that is only interconnected with conductive routes within the microelectronic substrate. In addition to increasing communication bandwidth due to high density microelectronic device-to-microelectronic device interconnect structures, embodiments of the present description may also enable improved assembly processes due (at least in part) to the maturity of silicon process technology. Furthermore, the increased high density microelectronic device-to-microelectronic device interconnect structures on the bridge may result in cost savings, modularity, and/or architectural flexibility. Examples of such potential benefits include improved reticle and semiconductor wafer utilization by microelectronic device aspect ratio optimization, the ability to combine within a single package microelectronic dice using different optimized silicon (or other) processes or dies incorporating differing or incompatible design methodologies, the potential to assemble non-rectangular or large “super-dice,” the ability to combine dies or die stacks with differing heights, and the like.
The microelectronic substrate 110 may be any appropriate microelectronic substrate, including, but not limited to, an interposer, a motherboard, and the like. The first microelectronic devices 1701 and a second microelectronic device 1702 (as well as any further microelectronic devices that may be utilized) may be any appropriate microelectronic devices, such as microelectronic dice, including, but not limited to a microprocessor, a chipset, a graphics device, a wireless device, a memory device, an application specific integrated circuit device, and the like.
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In one embodiment, the bridge 150 may comprise silicon-containing components. As will be understood to those skilled in the art, silicon bridges may be used because silicon process technology is relatively advanced, and interconnect pitches and line widths for the signal lines 162 that are achievable using existing silicon process technology may be significantly smaller, and thus more dense, than what is possible using, for example, currently available technology for copper signal lines in polymer layers.
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In some embodiments, the bridge 150 can be a passive structure, in that it has no functionality other than to provide a high-speed, high-density signal lines 162 between microelectronic devices 1701 and 1702 and to provide the through-bridge conductive vias 160 for signal paths between the substrate 110 and the microelectronic devices 1701 and 1702. In other embodiments, the bridge 140 comprises an active die, having its own functionality apart from a bridging function, and, thus, may have integrated circuitry, such as transistors, resistor, capacitors, and the like, formed in or on the silicon substrate 202 (shown generically with dashed line 240 in
As further shown in
Embodiments of the present description may also enable the precise alignment of the bridge 150 to the microelectronic substrate 110. Such alignment may be important in the creation of high density interconnection between the microelectronic devices 1701, 1702 with the signal lines 162. In one example, if the placement accuracy of a device placement tool is approximately 5 μm for the bridge 150 to the microelectronic substrate 110 placement, and the microelectronic devices 1701, 1702 to the bridge 150 or microelectronic substrate 110 placement, then the root mean square of the combined placement error is about 7 μm. Assuming a solder bump (used to form the interconnects 182 between the bridge 150 and the microelectronic devices 1701, 1702) diameter to be half the pitch of the signal traces 162 with at least half coverage of the bridge first surface bond pads 156, a pitch of about 28 μm may be achieved.
A further potential advantage of the embodiments of the present description may include designing the bridge 150 such that it consumes only one dielectric layer, as illustrated in
Although the
Depending on its applications, the computing device 300 may include other components that may or may not be physically and electrically coupled to the board 302. These other components include, but are not limited to, volatile memory (e.g., DRAM), non-volatile memory (e.g., ROM), flash memory, a graphics processor, a digital signal processor, a crypto processor, a chipset, an antenna, a display, a touchscreen display, a touchscreen controller, a battery, an audio codec, a video codec, a power amplifier, a global positioning system (GPS) device, a compass, an accelerometer, a gyroscope, a speaker, a camera, and a mass storage device (such as hard disk drive, compact disk (CD), digital versatile disk (DVD), and so forth).
The communication chip 306A, 306B enables wireless communications for the transfer of data to and from the computing device 300. The term “wireless” and its derivatives may be used to describe circuits, devices, systems, methods, techniques, communications channels, etc., that may communicate data through the use of modulated electromagnetic radiation through a non-solid medium. The term does not imply that the associated devices do not contain any wires, although in some embodiments they might not. The communication chip 306 may implement any of a number of wireless standards or protocols, including but not limited to Wi-Fi (IEEE 802.11 family), WiMAX (IEEE 802.16 family), IEEE 802.20, long term evolution (LTE), Ev-DO, HSPA+, HSDPA+, HSUPA+, EDGE, GSM, GPRS, CDMA, TDMA, DECT, Bluetooth, derivatives thereof, as well as any other wireless protocols that are designated as 3G, 4G, 5G, and beyond. The computing device 300 may include a plurality of communication chips 306A, 306B. For instance, a first communication chip 306A may be dedicated to shorter range wireless communications such as Wi-Fi and Bluetooth and a second communication chip 306B may be dedicated to longer range wireless communications such as GPS, EDGE, GPRS, CDMA, WiMAX, LTE, Ev-DO, and others.
The processor 304 of the computing device 300 may include a plurality microelectronic devices packaged within the processor 304. In some implementations of the present description, the microelectronic devices of the processor 304 may be connected to one another with a bridge having a through-bridge via, as described above. The term “processor” may refer to any device or portion of a device that processes electronic data from registers and/or memory to transform that electronic data into other electronic data that may be stored in registers and/or memory.
The communication chip 306A, 306B may include a plurality microelectronic devices packaged within the communication chip 306A, 306B. In accordance with another implementation of the present description, the microelectronic devices of the communication chip may be connected to one another with a bridge having a through-bridge via formed in accordance with implementations described above.
In various implementations, the computing device 300 may be a laptop, a netbook, a notebook, an ultrabook, a smartphone, a tablet, a personal digital assistant (PDA), an ultra mobile PC, a mobile phone, a desktop computer, a server, a printer, a scanner, a monitor, a set-top box, an entertainment control unit, a digital camera, a portable music player, or a digital video recorder. In further implementations, the computing device 300 may be any other electronic device that processes data.
It is understood that the subject matter of the present description is not necessarily limited to specific applications illustrated in
The following examples pertain to further embodiments. Specifics in the examples may be used anywhere in one or more embodiments.
In Example 1, a microelectronic structure may comprise a microelectronic substrate having a cavity defined therein extending from a first surface of the microelectronic substrate, wherein the cavity includes at least one sidewall and a bottom surface, wherein the microelectronic substrate includes a plurality of conductive routes extending from the substrate first surface and a plurality of conductive routes extending from the substrate cavity bottom surface; a bridge, disposed within the microelectronic substrate cavity, having a plurality of signal lines formed on or in a first surface of the bridge and a plurality of through-bridge conductive vias extending from the bridge first surface to an opposing second surface of the bridge, wherein the plurality of through-bridge conductive vias are electrically connected to the plurality of conductive routes extending from the microelectronic substrate bottom surface; and a plurality of microelectronic devices, wherein each of the plurality of microelectronic devices are electrically connected to at least one of the plurality of conductive routes extending from the substrate first surface, at least one of the plurality of the bridge signal lines, and at least one of the plurality of through-bridge conductive vias.
In Example 2, the subject matter of Example 1 can optionally include the bridge comprising silicon-containing components.
In Example 3, the subject matter of any of Examples 1 to 2 can optionally include the bridge comprising a passive structure.
In Example 4, the subject matter of any of Examples 1 to 2 can optionally include the bridge comprising an active structure.
In Example 5, the subject matter of any of Examples 1 to 4 can optionally include the bridge comprising a silicon substrate having an interconnection layer on a first surface thereof, wherein the interconnection layer comprises at least one dielectric layer formed on the silicon substrate first surface; wherein a plurality of bridge first surface bond pads and the plurality of bridge signal lines are formed in or on the dielectric layer; and further comprising a dielectric liner disposed between the through-bridge conductive vias and the silicon substrate.
In Example 6, the subject matter of any of Examples 1 to 5 can optionally include the microelectronic substrate comprising a plurality of dielectric layers having the plurality of conductive routes formed therein.
In Example 7, the subject matter of Example 6 can optionally include the conductive routes comprising at least one conductive trace formed on at least one of the plurality of dielectric layers and at least one conductive via extending through at least one of the plurality of dielectric layers.
In Example 8, the subject matter of any of Examples 1 to 6 can optionally include at least one of the plurality of microelectronic devices attached to the microelectronic substrate and to the bridge through a plurality of interconnects.
In Example 9, the subject matter of Example 8 can optionally include at least one of the plurality of interconnects extending between one of a plurality of bond pads on an active surface of one microelectronic device and a corresponding substrate bond pads, and another of the plurality of interconnects extending between another of plurality of the microelectronic device bond pads and a corresponding bond pad of a plurality of bond pads on a first surface of the bridge.
In Example 10, the subject matter of any of Examples 1 to 9 can optionally include a plurality of bond pads formed in or on the bridge second surface to contact corresponding through-bridge conductive vias and attached to corresponding substrate cavity bond pads formed in or on the substrate cavity bottom surface through a plurality of bridge-to-substrate interconnects.
In Example 11, a method of forming a microelectronic structure may comprise forming a microelectronic substrate having a cavity defined therein extending from a first surface of the microelectronic substrate, wherein the cavity includes at least one sidewall and a bottom surface, wherein the microelectronic substrate includes a plurality of conductive routes extending from the substrate first surface and a plurality of conductive routes extending from the substrate cavity bottom surface; forming a bridge including: forming a plurality of signal lines on or in a first surface of the bridge, and forming a plurality of through-bridge conductive vias extending from the bridge first surface to an opposing second surface of the bridge; disposing the bridge within the microelectronic substrate cavity and electrically connecting the plurality of through-bridge conductive vias to the plurality of conductive routes extending from the microelectronic substrate bottom surface; and attaching a plurality of microelectronic devices to the microelectronic substrate and the bridge, wherein each of the plurality of microelectronic devices are electrically connected to at least one of the plurality of conductive routes extending from the substrate first surface, at least one of the plurality of the bridge signal lines, and at least one of the plurality of through-bridge conductive vias.
In Example 12, the subject matter of Example 11 can optionally include forming the bridge from at least one silicon-containing component.
In Example 13, the subject matter of any of Examples 11 to 12 can optionally include forming the bridge as a passive structure.
In Example 14, the subject matter of any of Examples 11 to 12 can optionally include forming the bridge comprises as an active structure.
In Example 15, the subject matter of any of Examples 11 to 14 can optionally include forming the bridge comprising forming a silicon substrate having an interconnection layer on a first surface thereof, wherein the interconnection layer comprises at least one dielectric layer formed on the silicon substrate first surface; forming a plurality of bridge first surface bond pads and the plurality of bridge signal lines in or on the dielectric layer; and disposing a dielectric liner between the through-bridge conductive vias and the silicon substrate.
In Example 16, the subject matter of any of Examples 12 to 15 can optionally include forming microelectronic substrate comprising forming a plurality of dielectric layers having the plurality of conductive routes therein.
In Example 17, the subject matter of Example 16 can optionally include forming the conductive routes comprising forming at least one conductive trace on at least one of the plurality of dielectric layers and forming at least one conductive via through at least one of the plurality of dielectric layers.
In Example 18, the subject matter of any of Examples 11 to 17 can optionally include attaching the plurality of microelectronic devices comprising attaching the plurality of microelectronic devices to the microelectronic substrate and to the bridge through a plurality of interconnects.
In Example 19, the subject matter of Example 18 can optionally include attaching the plurality of microelectronic devices to the microelectronic substrate and to the bridge through a plurality of interconnects comprising attaching the plurality of microelectronic devices to the microelectronic substrate and to the bridge with at least one of the plurality of interconnects extending between at least one of a plurality of bond pads on an active surface of one microelectronic device and a corresponding substrate bond pads, and another of the plurality of interconnects extending between at least another of the plurality the microelectronic device bond pads and a corresponding bond pad of a plurality of bond pads on a first surface of the bridge.
In Example 20, the subject matter of any of Examples 11 to 19 can optionally include forming a plurality of bond pads in or on the bridge second surface to contact corresponding through-bridge conductive vias and attaching the plurality of bridge second surface bond pads to corresponding substrate cavity bond pads formed in or on the substrate cavity bottom surface with a plurality of bridge-to-substrate interconnects.
In Example 21, the subject matter of any of Examples 11 to 20 can optionally include delivering power to at least one microelectronic device through at least one of the plurality of through-bridge conductive vias.
In Example 22, a computing device may comprise aboard; a microelectronic device attached to the board; and a microelectronic structure disposed within the microelectronic device, wherein the microelectronic structure comprises: a microelectronic substrate having a cavity defined therein extending from a first surface of the microelectronic substrate, wherein the cavity includes at least one sidewall and a bottom surface, wherein the microelectronic substrate includes a plurality of conductive routes extending from the substrate first surface and a plurality of conductive routes extending from the substrate cavity bottom surface; a bridge disposed within the microelectronic substrate having a plurality of signal lines formed on or in a first surface of the bridge and a plurality of through-bridge conductive vias extending from the bridge first surface to an opposing second surface of the bridge, wherein the plurality of through-bridge conductive vias are electrically connected to the plurality of conductive routes extending from the microelectronic substrate bottom surface; and a plurality of microelectronic devices, wherein each of the plurality of microelectronic devices are electrically connected to at least one of the plurality of conductive routes extending from the substrate first surface, at least one of the plurality of the bridge signal lines, and at least one of the plurality of through-bridge conductive vias.
In Example 23, the subject matter of Example 22 can optionally include the bridge comprising a silicon substrate having an interconnection layer on a first surface thereof, wherein the interconnection layer comprises at least one dielectric layer formed on the silicon substrate first surface; wherein a plurality of bridge first surface bond pads and the plurality of bridge signal lines are formed in or on the dielectric layer; and further comprising a dielectric liner disposed between the through-bridge conductive vias and the silicon substrate.
In Example 24, the subject matter of any of Examples 22 to 23 can optionally include at least one of the plurality of microelectronic devices attached to the microelectronic substrate and to the bridge through a plurality of interconnects, wherein at least one of the plurality of interconnects extends between one of a plurality of bond pads on an active surface of one microelectronic device and a corresponding substrate bond pads, and another of the plurality of interconnects extends between another of plurality of the microelectronic device bond pads and a corresponding bond pad of a plurality of bond pads on a first surface of the bridge.
In Example 25, the subject matter of any of Examples 22 to 24 can optionally include a plurality of bond pads formed in or on the bridge second surface to contact corresponding through-bridge conductive vias and attached to corresponding substrate cavity bond pads formed in or on the substrate cavity bottom surface through a plurality of bridge-to-substrate interconnects.
Having thus described in detail embodiments of the present description, it is understood that the present description defined by the appended claims is not to be limited by particular details set forth in the above description, as many apparent variations thereof are possible without departing from the spirit or scope thereof.
Karhade, Omkar G., Deshpande, Nitin A.
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