Disclosed are a transparent conductive layer and a transparent electrode comprising the same, and in particular, a zinc oxide-based transparent conductive layer having a textured surface, wherein the textured surface has protrusions, each protrusion having a ridge forming an arc in its protruding direction, or having an apex at an edge thereof such that two ridges forms an obtuse angle of 90° or more. The transparent conductive layer is manufactured by sputtering only without wet etching.
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2. The method of manufacturing a zinc oxide-based transparent conductive layer according to
wherein H2O is further introduced during the sputtering process.
3. The method for manufacturing a zinc oxide-based transparent conductive layer according to
wherein the content of the hydrogen gas is 1 to 30 vol % relative to the entire gas.
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This application is a Divisional of U.S. patent application Ser. No. 13/121,577, filed Mar. 29, 2011, which is a National Stage entry of International Application No. PCT/KR2009/005482 filed on Sep. 25, 2009, and claims priority of U.S. Korean Application Nos. 10-2008-0095920 filed Sep. 30, 2008 and 10-2009-0090854 filed Sep. 25, 2009, all of which are incorporated by reference in their entirety herein.
Field of the Invention
The present invention relates to a zinc oxide-based transparent conductive layer having a textured surface, its manufacturing method and a transparent electrode for a solar cell using the same.
Description of the Related Art
In the case of a thin-film silicon-based solar cell, because a silicon has a small extinction coefficient, it needs to increase the efficiency of the solar cell by increasing the path of an incident light by light scattering in an absorption layer. For this purpose, the surface of a front electrode of a thin-film solar cell is textured to increase the optical conversion efficiency. Currently, the front electrode of the thin-film solar cell largely is classified into two types of transparent conductive layers; FTO (F doped SnO2 (fluorine-doped tin oxide)) and ZnO (zinc oxide).
A FTO transparent conductive layer is manufactured by atmospheric pressure CVD (Chemical Vapor Deposition) using HF and SnCl4 as reaction gases, and should have a relatively large thickness (normally ˜1 μm or more). Here, the deposition process is generally performed at a high temperature of 600° C. or above. The FTO transparent conductive layer is very weak against a hydrogen atmosphere, that is, the FTO transparent conductive layer has low transmittance due to a reduction reaction of hydrogen plasma that generates during PECVD (Plasma Enhanced Chemical Vapor Deposition) used to form an active layer (for example, amorphous Si) of a thin-film silicon solar cell.
On the other hand, the zinc oxide-based transparent conductive layer has excellent resistance against a reduction reaction of hydrogen plasma, and thus, its research is in active progress for the purpose of substituting for the FTO transparent conductive layer in a thin-film silicon solar cell. In the manufacture of the zinc oxide-based transparent conductive layer, atmospheric pressure CVD has problems with stability of an organic precursor and so on and does not yet have the established optimum conditions therefor, and sputtering has difficulty in surface texturing.
Accordingly, a two-step manufacturing method has been developed to manufacture a zinc oxide-based transparent conductive layer having a textured surface, which comprises depositing a thick zinc oxide-based transparent conductive layer with a sputter, and texturing the surface of the conductive layer through wet etching. However, this method needs wet etching after deposition of a thick layer, resulting in complicated process and increased time.
The present invention is designed to solve the problems of the prior art, and therefore it is an object of the present invention to provide a method for manufacturing a zinc oxide-based transparent conductive layer that is used as a transparent electrode and has a textured surface for improved optical conversion efficiency, and at this time, surface texturing is accomplished by controlling various process parameters during sputter deposition, thereby eliminating the need for wet etching.
And, it is an object of the present invention to provide a zinc oxide-based transparent conductive layer having a different surface texture structure from conventional structures through the above-mentioned manufacturing method.
Further, it is an object of the present invention to provide a transparent electrode comprising said transparent conductive layer and a solar cell comprising said transparent electrode.
To achieve the objects, the present invention provides a zinc oxide-based transparent conductive layer having a textured surface, wherein the textured surface has protrusions, each protrusion having a ridge forming an arc in its protruding direction, or having an apex at an edge thereof such that two ridges forms an obtuse angle of 90° or more.
Preferably, an X-ray diffraction image of the conductive layer having the textured surface has only a (002) peak.
And, in an embodiment of the present invention, the protrusion of the textured surface may have a diagonal length of 200 to 600 nm in a base thereof and a height of 30 to 250 nm, however the present invention is not limited in this regard.
And, in an embodiment of the present invention, the conductive layer may have, as a dopant, at least one element selected from the group consisting of group 13 elements in the periodic table and transition metals having an oxidation number of +3. Specifically, the conductive layer has, as a dopant, at least one element selected from the group consisting of aluminum, gallium, boron and silicon. In this case, a dopant content in the conductive layer may be 4 wt % or less, preferably 3 wt % or less. For example, in the case that gallium is solely used as a dopant, a gallium content in the conductive layer may be less than 3 wt %. In the case that aluminum is solely used as a dopant, an aluminum content in the conductive layer may be 1 wt % or less. In the case that boron is solely used as a dopant, a boron content in the conductive layer may be 1 wt % or less. In the case that gallium and aluminum are used as a dopant, an aluminum content in the conductive layer may be 0.5 wt % or less and a gallium content may be 1.0 wt % or less.
And, to achieve the objects, the present invention provides a method for manufacturing a zinc oxide-based transparent conductive layer, comprising sputtering from a zinc oxide target having a dopant content of 0 to 4 wt % in the presence of a mixed gas of argon and hydrogen under conditions of pressure of 1 to 30 mTorr and temperature of 100 to 500° C.
Preferably, the content of the hydrogen gas may be 1 to 30 vol % relative to the entire gas, however the present invention is not limited in this regard.
And, H2O may be further introduced during the sputtering process.
The zinc oxide-based transparent conductive layer according to the present invention is formed on a transparent substrate and can be used as a transparent electrode, and the transparent electrode according to the present invention is very useful as a front electrode of a solar cell.
The manufacturing method of the present invention can manufacture a zinc oxide-based transparent conductive layer having a textured surface only by sputtering and eliminates the need for a separate process such as wet etching and so on, and as a result, a process is simplified, manufacturing time is reduced, surface texturing is accomplished uniformly in size and shape over the entire thin layer, and it is possible to manufacture a transparent conductive layer of small thickness and low specific resistance.
The zinc oxide-based transparent conductive layer of the present invention can be used as an electrode of various devices such as thin-film solar cells and so on.
Other objects and aspects of the present invention will become apparent from the following description of embodiments with reference to the accompanying drawing in which:
Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. Prior to the description, it should be understood that the terms used in the specification and the appended claims should not be construed as limited to general and dictionary meanings, but interpreted based on the meanings and concepts corresponding to technical aspects of the present invention on the basis of the principle that the inventor is allowed to define terms appropriately for the best explanation.
Referring to
A first type protrusion 10 is illustrated in section A of
A second type protrusion 10 is illustrated in section B of
The “majority of the protrusions” means 40% or more, preferably 50% or more, more preferably 70% or more, of the total number of protrusions. In this case, in the present invention, because protrusions having two types of shapes are found in great numbers, there is no special maximum limit in the number of protrusions. For example, 90% of protrusions, preferably 99% may have the two types of shapes, however the present invention is not limited in this regard.
The size of the protrusion according to the present invention may vary depending on specific sputtering conditions in the manufacturing process. For example, the protrusion may have a diagonal length of 200 to 600 nm in the base thereof, and a height of 30 to 250 nm. The above-mentioned ranges lead to excellent light scattering effects. And, the protrusion may have Ra (surface roughness) of 15 nm or more.
To improve conductivity, the zinc oxide-based transparent conductive layer of the present invention may further include, as a dopant, at least one element selected from the group consisting of group 13 elements in the periodic table and transition metals having an oxidation number of +3. Preferably, the zinc oxide-based transparent conductive layer may further include, as a dopant, at least one selected from the group consisting of aluminum, gallium, boron and silicon, however the present invention is not limited in this regard.
The dopant content in the conductive layer of the present invention may be 4 wt % or less, preferably 3 wt % or less. If the dopant content exceeds 4 wt %, surface texturing may not be accomplished and the specific resistance of the conductive layer may increase. The minimum limit of the dopant content is not limited to a specific value if it can improve conductivity, however a preferable minimum limit may be 0.1 wt % to expect the effect of addition of a dopant.
Specifically, if gallium is solely used as a dopant, the content of gallium in the conductive layer may be less than 3 wt %. If aluminum is solely used as a dopant, the content of aluminum in the conductive layer may be 1 wt % or less. If boron is solely used as a dopant, the content of boron in the conductive layer may be 1 wt % or less. If gallium and aluminum are used as a dopant, the content of aluminum in the conductive layer may be 0.5 wt % or less and the content of gallium may be 1.0 wt % or less. In the conductive layer of the present invention, there is a critical significance that if a specific dopant content exceeds the above-mentioned maximum limit, surface texturing is not accomplished.
The conductive layer of the present invention may have preferably a thickness of 100 to 500 nm. However, the thickness may be controlled according to definite purpose of use, and accordingly, the present invention is not limited to a specific thickness. If the thickness of the conductive layer is less than 100 nm, it results in reduction in electrical conductivity and size of protrusions of surface texture. If the thickness of the conductive layer exceeds 500 nm, transmittance of the conductive layer may diminish.
The conductive layer of the present invention may have various haze values depending on surface texturing under various conditions. For example, the conductive layer of the present invention may have a haze value of 5% or more.
Preferably, the conductive layer of the present invention has a suitable level of conductivity to be used as an electrode. For example, the conductive layer has preferably a specific resistance of 5×10−2 Ωcm.
Hereinafter, a method for manufacturing a zinc oxide-based transparent conductive layer according to an embodiment of the present invention is described in detail.
The method for manufacturing a zinc oxide-based transparent conductive layer according to the present invention comprises sputtering from a zinc oxide target having 0 to 4 wt % of a dopant in the presence of a mixed gas of argon and hydrogen under conditions of pressure of 1 to 30 mTorr and temperature of 100 to 500° C.
The method for manufacturing a transparent conductive layer according to the present invention does not use FTO (F doped SnO2) weak against a hydrogen atmosphere, but zinc oxide. And, a conventional method for manufacturing a zinc oxide-based transparent conductive layer requires wet etching after deposition, while the manufacturing method of the present invention can manufacture a zinc oxide-based transparent conductive layer having a textured surface without wet etching by controlling various sputtering conditions.
In the present invention, the zinc oxide sputtering target may further contain a dopant, and the dopant content is mentioned above.
In the sputtering process of the present invention, a mixed gas of argon (Ar) and hydrogen (H2) is used as an atmosphere gas. Preferably, the content of the hydrogen gas is 1 to 30 vol % relative to the entire gas. If the content of the hydrogen gas is less than 1 vol %, surface texturing is not properly accomplished. If the content of the hydrogen gas exceeds 30 vol %, light transmittance of a thin layer may diminish.
Optionally, H2O may be further introduced during the sputtering process of the present invention. H2O may be introduced into a chamber through a separate injection device (for example, a leak valve), and its content is preferably 20 vol % or less relative to the entire gas.
In the sputtering process of the present invention, the pressure is preferably 1 to 30 mTorr. If the pressure is less than 1 mTorr, a plasma is not stably generated, and consequently it is difficult to deposit a layer. If the pressure exceeds 30 mTorr, the size of protrusions of surface texture remarkably decreases.
In the sputtering process of the present invention, the temperature is preferably 100 to 500° C., preferably 100 to 400° C., more preferably about 200° C. or so. If the temperature is less than 100° C., the size of protrusions of surface texture decreases.
The present invention is not limited to a specific sputtering technique if it is typically used in the art. For example, RF (radio-frequency) or DC (direct-current) sputtering may be used.
The zinc oxide-based transparent conductive layer manufactured by sputtering according to the present invention is deposited on a suitable substrate, and at this time, if the substrate is a transparent substrate, a transparent electrode is manufactured. If it is a transparent substrate on which the zinc oxide-based transparent conductive layer of the present invention is deposited to manufacture a transparent electrode, the present invention is not limited to a specific type substrate. For example, the substrate may be glass substrate, plastic substrate, oxide deposited substrate and so on.
The transparent electrode of the present invention can be used as a front electrode of a thin-film solar cell.
Hereinafter, the present invention will be described in detail through specific examples. However, the description proposed herein is just a preferable example for the purpose of illustrations only, not intended to limit the scope of the invention, so it should be understood that the examples are provided for a more definite explanation to an ordinary person skilled in the art.
A zinc oxide-based transparent conductive layer was deposited on a glass substrate at a thickness shown in Table 1 using a zinc oxide target doped with 2.72 wt % of Ga by means of an RF magnetron sputter under temperature of about 200° C. and pressure of about 3 mTorr. At this time, a working gas was a mixed gas of Ar and H2 at a mixing ratio of 7 vol % of H2/(Ar+H2).
A zinc oxide-based transparent conductive layer was manufactured in the same way as example 1 except that Ar gas was solely used as a working gas.
A zinc oxide-based transparent conductive layer was manufactured in the same way as example 1 except that a doping content of Ga was 5.5 wt %.
A zinc oxide-based transparent conductive layer was manufactured in the same way as example 1 except that a deposition temperature of a thin layer was RT(˜23° C.).
The haze of each zinc oxide-based transparent conductive layer of example 1 and comparative examples 1 to 3 was measured, and the results are shown in Table 1. An SEM image of the surface of each conductive layer is provided in
TABLE 1
Atmos-
Deposition
Specimen
phere
temperature
Thickness
Haze
type
gas
(° C.)
(nm)
(%)
Example 1
GZO(2.72 wt
Ar + H2
200
~450
36.30
%)/Glass
Comparative
GZO(2.72 wt
Ar
200
~550
0.16
example 1
%)/Glass
Comparative
GZO(5.5 wt
Ar + H2
200
~440
0.13
example 2
%)/Glass
Comparative
GZO(2.5 wt
Ar + H2
RT
~400
0.21
example 3
%)/Glass
It is found from the observation that there is a suitable dopant content for surface texturing according to the present invention, and its detailed description is in the following experimental example 2.
(1) Gallium (Ga)
The sputter deposition was performed in the same way as example 1 except that Ga content was used as shown in the following Table 2.
After observing the shape of surface texture of a conductive layer deposited with a change in dopant content, 5% or more of haze was evaluated as “O” and the rest as “X”.
TABLE 2
Ga content (wt %)
0.0
0.5
1.8
2.5
2.7
3.0
4.5
5.5
Texturing
◯
◯
◯
◯
◯
X
X
X
As shown in Table 2, in the case that Ga is used as a dopant, less than 3 wt % of Ga leads to proper surface texture.
(2) Aluminum (Al)
The sputter deposition was performed in the same way as example 1 except that Al content was used as shown in the following Table 3.
The evaluation standard of surface texture is as mentioned above.
TABLE 3
Al content(wt %)
1.00
1.25
1.50
2.00
Texturing
◯
X
X
X
As shown in Table 3, in the case that Al is used a dopant, 1 wt % or less of Al leads to proper surface texture.
(3) Aluminum and Gallium (Al, Ga)
The sputter deposition was performed in the same way as example 1 except that Al and Ga contents were used as shown in the following Table 4.
The evaluation standard of surface texture is as mentioned above.
TABLE 4
Al content(wt %)
0.50
0.80
0.50
0.80
1.00
Ga content(wt %)
0.75
0.50
1.00
1.00
1.50
Texturing
◯
◯
◯
X
X
As shown in Table 4, in the case that Al and Ga are used as a dopant, 0.5 wt % or less of Al and 1.0 wt % of Ga leads to proper surface texture.
X-ray diffraction (XRD) analysis was made on the transparent conductive layer having a textured surface according to example 1, and the results are shown in
As shown in
A zinc oxide-based transparent conductive layer was deposited on a glass substrate using a zinc oxide target doped with 2.5 wt % of Ga and 0.2 wt % of B by means of an RF magnetron sputter under temperature of about 200° C. and pressure of about 3 mTorr.
The working gas was a mixed gas of Ar and H2 at a mixing ratio of 7 vol % of H2/(Ar+H2). And, H2O was introduced into a chamber through a leak valve capable of injecting water into a gas line. The thickness of the thin layer was controlled to 150 to 200 nm.
A zinc oxide-based transparent conductive layer was manufactured in the same way as example 2 except that B was not used as a dopant and H2 gas was not used.
The shape of surface texture and roughness of each zinc oxide-based transparent conductive layer manufactured according to example 2 and comparative example 4 was analyzed through SEM and AFM, and the results are shown in Table 5 and
TABLE 5
Surface
Roughness
Classification
Sputtering conditions
texturing
(Ra (nm))
Example 2
Ga(2.5 wt %) doping + B
◯
c~e = 21
(0.2 wt %) doping + Ar + H2 +
H2O
Comparative
Ga(2.5 wt %) doping + Ar +
X
c~e = 3
example 4
H2O
As shown in Table 5, the example 2 of the present invention exhibited sufficient surface texture and consequently effective roughness, while the comparative example 4 did not so.
And, referring to
Jang, Hyeon-Woo, Bang, Jung-Sik, Lim, Jin-Hyong
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