FIG. 1 is a perspective view of a light-emitting diode device showing our first example of the new design;
FIG. 2 is another perspective view thereof;
FIG. 3 is a front elevational view thereof;
FIG. 4 is a rear elevational view thereof;
FIG. 5 is a left side view thereof;
FIG. 6 is a right side view thereof;
FIG. 7 is a top plan view thereof;
FIG. 8 is a bottom plan view thereof;
FIG. 9 is an enlarged partial view thereof at section A in FIG. 1;
FIG. 10 is an enlarged partial view thereof at section B in FIG. 1;
FIG. 11 is an enlarged partial view thereof at section C in FIG. 1;
FIG. 12 is a perspective view of a light-emitting diode device showing our second example of the new design;
FIG. 13 is another perspective view thereof;
FIG. 14 is a front elevational view thereof;
FIG. 15 is a rear elevational view thereof;
FIG. 16 is a left side view thereof;
FIG. 17 is a right side view thereof;
FIG. 18 is a top plan view thereof;
FIG. 19 is a bottom plan view thereof;
FIG. 20 is an enlarged partial view thereof at section A in FIG. 11;
FIG. 21 is an enlarged partial view thereof at section B in FIG. 11; and,
FIG. 22 is an enlarged partial view thereof at section C in FIG. 1.
The broken line showing is for the purpose of illustrating environmental structure only and forms no part of the claimed design.
Patent |
Priority |
Assignee |
Title |
7042089, |
Mar 31 2000 |
Toyoda Gosei Co., Ltd. |
Group III nitride compound semiconductor device |
7531841, |
Apr 04 2006 |
SAMSUNG ELECTRONICS CO , LTD |
Nitride-based semiconductor light emitting device |
7947996, |
Jun 28 2006 |
Nichia Corporation |
Semiconductor light emitting element |
8093605, |
Aug 04 2005 |
TOYODA GOSEI CO , LTD |
Gallium nitride-based compound semiconductor light-emitting device with an electrode covered by an over-coating layer |
8120057, |
Feb 01 2007 |
Nichia Corporation |
Semiconductor light emitting element |
8188493, |
Sep 14 2010 |
EPISTAR CORPORATION |
Light emitting diode with independent electrode patterns |
8293382, |
Mar 30 2007 |
EPISTAR CORPORATION |
Semiconductor light-emitting device having stacked transparent electrodes |
8436369, |
Jan 07 2010 |
SEOUL VIOSYS CO , LTD |
Light emitting diode having electrode pads |
8466487, |
Jul 23 2010 |
Nichia Corporation |
Light emitting element with extended electrodes structure |
8546840, |
Feb 07 2011 |
Nichia Corporation |
Semiconductor light emitting element |
8716732, |
Aug 27 2010 |
Toyoda Gosei Co., Ltd. |
Light emitting element |
20030107053, |
|
|
|
20080210972, |
|
|
|
20110121329, |
|
|
|
20140077252, |
|
|
|
20140225143, |
|
|
|
D674356, |
Feb 01 2011 |
Nichia Corporation |
Light emitting diode chip |
D681567, |
Jan 19 2012 |
EPISTAR CORPORATION |
Light-emitting diode |
D687396, |
Sep 06 2012 |
EPISTAR CORPORATION |
Light-emitting diode array |
D698743, |
Dec 07 2012 |
EPISTAR CORPORATION |
Light-emitting diode |
D718259, |
Aug 13 2013 |
EPISTAR CORPORATION |
Light-emitting diode device |
D721663, |
Aug 02 2013 |
EPISTAR CORPORATION |
Light-emitting diode device |