Method and apparatus for mechanical planarization and endpoint detection of a semiconductor wafer

Abstract

A method and apparatus for mechanical planarization and endpoint detection of a semiconductor wafer or the like. The apparatus includes a polishing head for rotating the wafer under a controlled pressure against a rotating polishing platen. The polishing head is mounted such that the wafer can be moved across the polishing platen to overhang a peripheral edge of the polishing platen and expose the surface of the wafer. Endpoint detection apparatus in the form of a laser interferometer measuring device is directed at an unpatterned die on the exposed surface of the wafer to detect oxide thickness at that point. The laser light beam is enclosed in a column of liquid to clean the wafer surface at the point of detection and to provide a uniform reference medium for the laser light beam.

Description

FIELD OF THE INVENTION

This invention relates to the fabrication of integrated circuits and more particularly to a novel method and apparatus for mechanical planarization and endpoint detection of a semiconductor wafer.

BACKGROUND OF THE INVENTION

In the fabrication of integrated circuits (ICs), it is often necessary to polish a side of a part such as a thin flat wafer of a semiconductor material functions to clean the surface of the wafer 10 at the point of laser measurement and to provide a constant liquid reference background or medium for obtaining the laser measurement.

The apparatus and method of the invention thus provide for mechanical planarization of a semiconductor wafer with means for accurately detecting the endpoint of the surface or oxide thickness of the semiconductor wafer during the planarization operation. As is apparent from the foregoing description, this is accomplished by detecting an oxide thickness at a predetermined reference point (i.e unpatterned die). Other reference points on the wafer may also be utilized. Additionally, other types of measuring devices or multiple laser measuring devices and/or multiple reference points can also be utilized to obtain an average thickness.

While the process of the invention has been described with reference to a preferred embodiment, as will be apparent to those skilled in the art, certain changes and modifications can be made without departing from the scope of the invention as defined by the following claims.

Claims

1. A process for polishing a flat wafer comprising:

a. holding the wafer in a rotatable polishing head mounted for movement across and over a peripheral edge of a polishing platen;

b. rotating a surface of the wafer in a polishing slurry across the polishing platen;

c. overhanging a portion of the wafer across a peripheral edge of the polishing platen to expose a surface of the wafer; and

d. detecting using endpoint detection means an endpoint of the wafer.

2. A process as claimed in claim 1 and wherein the endpoint detection means comprises a laser interferometer measuring device.

3. A process as claimed in claim 2 and wherein the laser interferometer measuring device is situated to detect the thickness of an oxide on the wafer located on an unpatterned die on the wafer.

4. A process as claimed in claim 3 and wherein the polishing platen is also rotatably mounted for rotation in the same direction aas the polishing head.

5. A process as claimed in claim 3 and further comprising:

directing a column of liquid on the wafer for cleaning the wafer and for providing a reference medium for the laser.

6. A process for polishing a thin flat semiconductor wafer having an oxide surface comprising:

a. holding the semiconductor wafer in a rotatable polishing head mounted for movement across and over a peripheral edge of a polishing platen;

b. rotating the wafer in a polishing slurry across the polishing platen;

c. overhanging a portion of the wafer across a peripheral edge of the polishing platen to expose a surface of the wafer; and

d. detecting a thickness of the oxide coating of the wafer utilizing a laser detection apparatus having a detecting laser beam enclosed in a column of water and directed at an unpatterned die on the wafer surface.

7. The process as claimed in claim 6 and further comprising:

rotating the polishing platen in the same direction as the polishing head.

7. A process as claimed in claim 23 wherein:

the wafer, polishing head, and polishing platen are each generally circular in shape. 28. A process for polishing a thin flat generally circular shaped semiconductor wafer having an oxide coating comprising:

a. holding a semiconductor wafer in a rotatable polishing head;

b. rotating the semiconductor wafer over a rotating polishing platen under pressure from the polishing head in a polishing slurry; and

c. moving the wafer across a peripheral edge of the polishing platen for overhanging the wafer and for compensating for velocity differentials on different portions of the generally circular shaped wafer. 29. A process as claimed in claim 28 further comprising moving approximately one-half of the wafer across the peripheral edge of the polishing platen.

8. The process as claimed in claim 6 and further comprising:

moving the polishing head across the peripheral edge of the polishing platen to compensate for a velocity differential between different portions of the rotating wafer.

9. The process as claimed in claim 8 and wherein:

the wafer, polishing head, and polishing platen are each generally circular in shape.

10. The process as claimed in claim 8 and wherein: the unpatterned die includes a metallic film having an oxide coating thereon.

11. A process for polishing a thin flat generally circular shaped semiconductor wafer having an oxide coating and for detecting the thickness of the oxide coating, comprising:

a. holding the semiconductor wafer in a rotatable polishing head;

b. rotating the semiconductor wafer over a rotating polishing platen under pressure from the polishing head in a polishing slurry;

c. overhanging a portion of a surface of the semiconductor wafer over the polishing platen to expose the surface for endpoint detection of an oxide on the semiconductor wafer;

d. directing a laser beam enclosed in a column of liquid at an unpatterned die on the wafer, for detecting using laser interferometry a thickness of an oxide coating on the wafer; and

e. moving the wafer across the peripheral edge of the polishing platen for overhanging the wafer and for compensating for velocity differentials on different portions of the generally circular shaped wafer.

12. The process as claimed in claim 11 and wherein:

the semiconductor wafer is formed of silicon having a silicide surface and the unpatterned die includes a tungsten film with an oxide coating.

13. Apparatus for mechanically planarizing a thin flat wafer comprising:

a. polishing means including a polishing platen and an abrasive slurry;

b. a polishing head for holding the wafer and mounted for rotating and for moving the wafer across the polishing platen and past a peripheral edge of the polishing platen under a controlled pressure; and

c. endpoint detection means including a laser interferometer with a laser beam contained in a column of liquid for detecting an endpoint on an exposed surface of the wafer.

14. Apparatus as claimed in claim 13 and wherein:

the polishing platen is rotated in the same direction as said polishing head.

15. Apparatus as claimed in claim 14 and wherein:

the laser interferometer detection device includes a laser light beam, a return light conduit, and a liquid conduit which is arranged to direct a liquid at the exposed surface of the wafer to surround the laser light beam and clean a surface of the wafer and to provide a uniform reference medium for the laser light beam.

16. Apparatus as claimed in claim 15 and wherein:

the laser light beam is directed at an unpatterned die on the wafer.

17. Apparatus as claimed in claim 16 and wherein:

the unpatterned die includes a metallic film having an oxide coating formed thereon.

18. Apparatus as claimed in claim 17 and wherein:

said metallic film is tungsten and said oxide film is a silicide.

19. Apparatus for mechanically planarizing a thin flat semiconductor wafer comprising:

a. polishing means including a rotating generally circular shaped polishing platen and an abrasive slurry;

b. a polishing head for holding the semiconductor wafer and mounted for rotation and for moving the wafer across a peripheral circumferential edge of the polishing platen under a controlled pressure to expose a surface of the wafer; and

c. endpoint detection means including a laser interferometer measuring device having a laser light beam directed at an unpatterned die on the surface of the wafer and including a control unit, a light return conduit, and a liquid conduit circumjacent to the laser light beam for directing a liquid at the wafer surface to clean the surface and provide a reference medium for the laser light beam.

20. Apparatus as claimed in claim 19 and wherein:

said unpatterned die includes a metallic film coated with an oxide.

21. Apparatus as claimed in claim 19 and wherein:

said polishing platen is rotated in the same direction as the polishing head.

22. Apparatus as claimed in claim 21 and wherein:

said liquid for surrounding the laser light beam is water.

23. A process for polishing a flat wafer comprising:

a. holding a wafer in a rotatable polishing head mounted for movement across and over a peripheral edge of a polishing platen;

b. rotating a surface of the wafer in a polishing slurry across the polishing platen; and

c. overhanging a portion of the wafer across a peripheral edge of the polishing platen to expose a surface of the wafer. 24. A process as claimed in claim 23 wherein the polishing platen is also rotatably mounted for rotation in the same direction as the polishing head. 25. A process as claimed in claim 23 further comprising:

moving the polishing head across the peripheral edge of the polishing platen to compensate for a velocity differential between different portions of the rotating wafer. 26. A process as claimed in claim 23 further comprising overhanging approximately one-half of the wafer across the peripheral edge of the polishing platen. PAR