The present invention provides a reliable modular production quality excimer laser capable of producing 10 mJ laser pulses in the range of 1000 Hz to 2000 Hz or greater. Replaceable modules include a laser chamber; a pulse power system comprised of three modules; an optical resonator comprised of a line narrowing module and an output coupler module; a wavemeter module, an electrical control module, a cooling water module and a gas control module. Important improvements have been provided in the pulse power unit to produce faster rise time and improved pulse energy control. These improvements include an increased capacity high voltage power supply with a voltage bleed-down circuit for precise voltage trimming, an improved communication module that generates a high voltage pulse from the capacitors charged by the high voltage power supply and amplifies the pulse voltage 23 times with a very fast voltage transformer having a secondary winding consisting of a single four-segment stainless steel rod. A novel design for the compression head saturable inductor greatly reduces the quantity of transformer oil required and virtually eliminates the possibility of oil leakage which in the past has posed a hazard.
1. A very narrow band reliable modular production quality high repetition rate ArF F2 excimer laser for producing a narrow band pulsed laser beam at repetition rates of at least about 1000 Hz, said laser comprising:
A. a quickly replaceable laser chamber module comprising a laser chamber comprising: 1) two elongated electrodes; 2) a laser gas comprised of a) fluorine, and b) a noble gas; 3) a gas circulator for circulating said gas between said electrodes at speeds of at least two cm/millisecond B. a modular pulse power system comprised of at least one quickly replaceable module, said system being comprised of a power supply and pulse compression and amplification circuits and pulse power controls for producing high voltage electrical pulses of at least 14,000 volts across said electrodes at rates of at least about 1000 Hz; and C. a laser pulse energy control system for controlling the voltage provided by said pulse power system, said control system comprising a laser pulse energy monitor and a computer processor programmed with an algorithm for calculating, based on historical pulse energy data, electrical pulses needed to produce laser pulses having pulse energies within a desired range of energies.
35. A reliable modular production quality high repetition rate excimer laser for producing a narrow band pulsed laser beam at a repetition rate of at least about 1Khz, said laser comprising:
A. a quickly replaceable laser chamber module comprising: 1) two elongated electrodes 2) a laser gas comprised of fluorine and a buffer gas, 3) a gas circulator system for circulating said laser gas between said electrodes at at least two cm/millisecond comprising: a) a braze-free blade structure defining a shaft, b) a brushless motor for rotating said shaft, c) magnetic bearings for supporting said shaft said motor and said bearings having rotors attached to said shaft and sealed within an environment exposed to said laser gas and said motor and said bearings having a stator outside of said laser gas environment. B. a pulse power system substantially contained within at least one quickly replaceable module and comprising: 1) a processor controlled high voltage power supply for periodically, at rates of at least about 1000 Hz, charging with electrical energy a charging capacitor to a predetermined pulse control voltage, 2) a compression and amplification circuit for connecting electrical energy stored on said charging capacitor into a high voltage electrical pulses of at least 14,000 volts across said electrodes. 2. A laser as in
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A) measuring the energy in each pulse of said burst of pulses, B) determining a rate of change of pulse energy with charging voltage, ΔE/ΔV, C) controlling the pulse energy of each pulse PN in the first K pulses, in said burst of pulses by regulating the charging voltage of the laser utilizing a computer processor programmed with a first algorithm which: (1) determines for each PN a pulse energy error, ε, based on a measured energy of at least one previous pulse in said burst and a predetermined target pulse energy value, (2) determines for each PN an integrated dose error, D, of all previous pulses P1 through PN-1 in said burst, (3) determines a charging voltage VN, for each of said pulses, PN, in said first plurality of pulses using: (i) said ΔE/ΔV (ii) said ε (iii) said D (iv) a reference voltage based on specified voltages for PN in a plurality of previous bursts, D) controlling the pulse energy of each pulse PK+N, in pulses following PK in said burst of pulses by regulating the charging voltage of the laser utilizing a computer processor programmed with a second algorithm which: (1) determines for each PN a pulse energy error, ε, based on a measured energy of at least one previous pulse in said burst and a predetermined target pulse energy value, (2) determines for each PN an integrated dose error, D, of all previous pulses, P1 through PN-1 in said burst, (3) determines a charging voltage, VN, for each of said pulses, PN in said first plurality of pulses using: (i) said ΔE/ΔV (ii) said ε (iii) said D (iv) a reference voltage based on specified voltages for PN in a plurality of previous bursts, wherein said VN's in said fast and second algorithms are functions of at least said ΔE/ΔV, said ε, said D and said at least one reference voltage and said VN's when calculated one utilized to adjust said charging voltage to control both the individual pulse energy and the integrated energy dose to desired values.
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A) measuring the energy in each pulse of said burst of pulses, B) determining a rate of change of pulse energy with charging voltage, ΔE/ΔV, C) controlling the pulse energy of each pulse PN in the first K pulses, in said burst of pulses by regulating the charging voltage of the laser utilizing a computer processor programmed with a first algorithm which: (1) determines for each PN a pulse energy error, ε, based on a measured energy of at least one previous pulse in said burst and a predetermined target pulse energy value, (2) determines for each PN an integrated dose error, D, of all previous pulses P1 through PN-1 in said burst. (3) determines a charging voltage VN, for each of said pulses, PN, in said first plurality of pulses using: (i) said ΔE/ΔV (ii) said ε (iii) said D (v) a reference voltage base on specified voltages for PN in a plurality of previous bursts, D) controlling the pulse energy of each pulse PK+N, in pulses following PK in said burst of pulses by regulating the charging voltage of the laser utilizing a computer processor programmed with a second algorithm which: (1) determines for each PN a pulse energy error, ε, based on a measured energy of at least one previous pulse in said burst and a predetermined target pulse energy value, (2) determines for each PN an integrated dose error, D, of all previous pulses P1 through PN-1 in said burst, (3) determines a charging voltage, VN, for each of said pulses, PN in said first plurality of pulses using: (i) said ΔE/ΔV (ii) said ε (v) said D (vi) a reference voltage based on specified voltages for PN in a plurality of previous bursts, wherein said VN's in said first and second algorithms are functions of at least said ΔE/ΔV, said ε, said D and said at least one reference voltage and said VN's when calculated one utilized to adjust said charging voltage to control both the individual pulse energy and the integrated energy dose to desired values.
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This application is a Continuation-In-Part of Ser. No. 09/271,041, Reliable, Modular, Production Quality Narrow-Band High Rep Rate ArF Excimer Laser filed Mar. 17, 1999; Ser. No. 09/041,474. Reliable, Modular, Production Quality Narrow Band KrF excimer Laser, filed Mar. 11, 1998; Ser. No. 08/995,832, Excimer Laser Having Pulse Power Supply with Fine Digital Regulation, filed Dec. 22, 1997; Ser. No. 08/896,384 Wavelength Reference for Excimer Laser, filed Jul. 18, 1997; Ser. No. 08/939,611, Protective Overcoat for Replicated Diffraction Gratings, filed Sep. 29, 1997; Ser. No. 08/947,474, Narrow Band Excimer Laser, filed Oct. 10, 1997; Ser. No. 09/034,870, Pulse Energy Control for Excimer Laser, filed Mar. 4, 1998; Ser. No. 09/082,139, Narrow Band Excimer Laser with Gas Additive, filed May 20, 1998; Ser. No. 09/157,067, Reliable Modular Production Quality Narrow Band High Rep Rate Excimer Laser, filed Sep. 18, 1998; Ser. No. 09/162,341, Line Narrowing Apparatus with High Transparency Prism Beam Expander filed Sep. 28, 1998; Ser. No. 09/165,593, Wavelength System for an Excimer Laser filed Oct. 2, 1998; Ser. No. 09/206,526, Wavelength Reference for Laser, filed Dec. 7, 1998; Ser. No. 09/211,825, High Pulse Rate Power System with Resonant Power Supply filed Dec. 15, 1998; Ser. No. 09/217,340 Durable Etalon Based Output Coupler filed Dec. 21, 1998 all of which are incorporated herein by reference. This invention relates to lasers and in particular to narrow-band ArF excimer lasers.
Krypton-Fluoride (KrF) excimer lasers are currently becoming the workhorse light source for the integrated circuit lithography industry. The KrF laser produces a laser beam having a narrow-band wavelength of about 248 nm and can be used to produce integrated circuits with dimensions as small as about 180 nm. The Argon Fluoride (ArF) excimer laser is very similar to the KrF laser. The primary difference is the laser gas mixture and a shorter wavelength of the output beam. Basically, Argon replaces Krypton and the resulting wavelength of the output beam is 193 nm. This permits the integrated circuit dimensions to be further reduced to about 120 nm. F2 lasers have long been recognized as the successor to the KrF and ArF lasers in the integrated circuit lithography industry since the F2 beam at 157 nm permits a substantial improvement in pattern resolution. These F2 lasers can be very similar to the KrF and ArF excimer lasers and with a few modifications it is possible to convert a prior art KrF or ArF laser to operate as an F2 laser. A typical prior-art KrF excimer laser used in the production of integrated circuits is depicted in FIG. 1 and
Laser Chamber Module,
Pulse Power System with: high voltage power supply module,
commutator module and high voltage compression head module,
Output Coupler Module,
Line Narrowing Module,
Wavemeter Module;
Computer Control Module,
Gas Control Module,
Cooling Water Module
Electrodes 6 consist of cathode 6A and anode 6B. Anode 6B is supported in this prior art embodiment by anode support bar 44 which is shown in cross section in FIG. 3. Flow is clockwise in this view. One corner and one edge of anode support bar 44 serves as a guide vane to force air from blower 10 to flow between electrodes 6A and 6B. Other guide vanes in this prior art laser are shown at 46, 48 and 50. Perforated current return plate 52 helps ground anode 6B to the metal structure of chamber 8. The plate is perforated with large holes (not shown in
In a typical lithography excimer laser, a feedback control system measures the output laser energy of each pulse, determines the degree of deviation from a desired pulse energy, and then sends a signal to a controller to adjust the power supply voltage so that energy of subsequent pulses are close to the desired energy. In prior art systems, this feedback signal is an analog signal and it is subject to noise produced by the laser environment. This noise can result in erroneous power supply voltages being provided and can in turn result in increased variation in the output laser pulse energy.
These excimer lasers are typically required to operate continuously 24 hours per day, 7 days per week for several months, with only short outages for scheduled maintenance. One problem experienced with these prior-art lasers has been excessive wear and occasional failure of blower bearings.
A need exists in the integrated circuit industry for a modular, reliable, production line quality F2 laser in order to permit integrated circuit resolution not available with KrF and ArF lasers.
The present invention provides a reliable, modular, production quality F2 excimer laser capable of producing, at repetition rates in the range of 1,000 to 2,000 Hz or greater, laser pulses with pulse energies greater than 10 mJ with a full width half, maximum bandwidth of about 1 or less. Preferred embodiments of the present invention can be operated in the range of 1000 to 4000 Hz with pulse energies in the range of 10 to 5 mJ with power outputs in the range of 10 to 40 watts. Using this laser as an illumination source, stepper or scanner equipment can produce integrated circuit resolution of 0.1 μm or less. Replaceable modules include a laser chamber and a modular pulse power system.
Important improvements over prior art excimer lasers have been provided in the pulse power unit to produce faster charging. These improvements include an increased capacity high voltage power supply, an improved communication module that generates a high voltage pulse from capacitors charged by the high voltage power supply and amplifies the pulse voltage about 23 times with a very fast voltage transformer having a secondary winding consisting of a single four-segment stainless steel rod. A novel design for the compression head saturable inductor (referred to herein as a "pots and pans" design) greatly reduces the quantity of transformer oil required and virtually eliminates the possibility of oil leakage which in the past has posed a hazard.
Improvements in the laser chamber permitting the higher pulse rates and improved performance include the use of a single preionizer tube.
In a preferred embodiment the laser was tuned to the F2 157.6 nm line using a set of two external prisms. In a second preferred embodiment the laser is operated broad band and the 157.6 nm line is selected external to the resonance cavity. In a third preferred embodiment a line width of 0.2 pm is provided using injection seeding.
Other embodiments of the present invention include ceramic bearings. Optionally magnetic bearings may be utilized. Reaction forces on the bearings may be reduced by providing an aerodynamic contour on the anode support bar. Other improvements include use of acoustic baffles for laser chambers producing disruptive acoustic shock waves.
Preferable the intracavity beam line and the output beam line fully sealed and nitrogen purged.
FIGS. 8F1, 8F2 and 8F3 are time line charts showing pulse compression using the above preferred embodiment.
FIGS. 8G1 and 8G2 are drawing showing two views of a saturable inductor.
FIGS. 8H1 and 8H2 shows the mounting of a compression head in a preferred embodiment.
DESCRIPTION OF PREFERRED EMBODIMENTS
A preferred embodiment of the present invention can be described by reference to the drawings.
A front view of a preferred embodiment of the present invention is shown in
201 Laser enclosure
202 Gas module
203 Cooling water supply module
204 AC/DC distribution module
205 Control module
206 Line narrowing module
207 Compression head
208 High voltage pulse power supply module
209 Commutator module for pulse power supply
210 Metal fluoride trap
211 Laser chamber
213 Wavemeter module
214 Automatic shutter
216 Output coupler
217 Blower motor
218 Metal fluoride trap power supply
219 Status lamp
220 24 volt power supply
221 Chamber window
222 Gas control flexible connection
224 Vent box
A preferred embodiment of the present invention is an improved version of the laser described in
1) A single tube larger preionizer replaces the prior-art combination of a two-tube preionizer to provide improved efficiency, better preionization and improved laser gas flow between the electrodes;
2) A silicon-free fan blade which may be a one-piece machined blade;
3) The solid-state pulse power system has been modified to produce faster rise time, providing more consistent pulses, and improved laser efficiency at higher voltages;
4) More precise control of the charging voltage of the pulse power system;
5) A computer controller programmed with a new algorithm providing a much improved control of pulse energy and burst energy; and
6) Electrode spacing has been reduced to 10 mm.
As shown in
Referring now to
As explained above, Applicants have discovered that a single preionizer works dramatically better than two preionizers, and as explained above the first preferred embodiment places the single preionizer system upstream of the electrodes. Applicants have also experimented with the single preionizer located downstream and has discovered that at certain blower speeds this arrangement produces substantially better pulse energy stability than the upstream arrangement on the two tube arrangement.
Improvements have been made to the chamber to improve the efficiency of the laser. A single piece cathode insulator 55A comprised of alumina, Al2 O3 insulates the cathode from the upper chamber structure as shown in FIG. 6A. In a prior art design, eight separate insulators were needed to avoid insulator cracking due to thermal expansion stress in the insulator. This important improvement permitted the head portion of the chamber to be made shorter which significantly reduced the distance between cathode 83 the peaking capacitor 82. The individual capacitors 54A forming the peaking capacitor array 82 were moved horizontally in closer to the cathode as compared to the prior art. To reduce thermal expansion difference between the single piece insulator and the chamber structure the upper chamber 8A was fabricated from ASTM A3C steel which has a coefficient of thermal expansion closer to Al2 O3 than aluminum. The bottom section 8B of chamber 8 is aluminum, but Applicants have determined that the difference in thermal expansion between ASTM A3C steel and aluminum is not a problem. Both the steel and aluminum parts are nickel coated.
Prior art cathodes for commercial lithography lasers were typically supported by a cathode support bar 53 as shown in FIG. 3. In this preferred embodiment, the cathode support bar was eliminated and the cathode 83 was made slightly thicker and mounted directly on the single piece insulator 55A. The cathode 83 is connected to the high voltage side 82A of peaking capacitor 82 by 15 feed through rods 83A and connecting nuts 83B. In the preferred embodiment, a new anode support bar 84A is substantially more massive than prior art anode support bars and comprises fins 84B located in the gas flow region. Both of these features minimize temperature variations of the anode.
Applicants have discovered that prior art elastomer seals reacted with fluorine gas to produce contaminants in the laser gas which degraded laser performance. A preferred embodiment of the present invention uses all metal seals to seal the laser chamber. The preferred metal seals are tin plated inconel 1718 seals.
Applicants have also discovered that elements of stainless steel also react with fluorine to produce contaminants in the laser gas. Therefore, in this preferred embodiment, prior art stainless steel current return structures and gas flow vanes have been replaced with monel current returns 250 and monel flow vanes 252 and 254.
Applicants have discovered that a significant cause of distortion of the quality of laser beams produced by narrow-band excimer lasers operating at 2000 Hz or greater is acoustic shock waves created by the electric discharge of one pulse which reflects from elements of chamber structure back to the space between the electrodes and distorts the laser beam of the next pulse occurring 0.5 millisecond later. An embodiment described herein (see
Applicants have also discovered that acoustic shock effects can be minimized by reducing streamers in the electric discharge. In fact, in a preferred embodiment of the present invention changes made in the chamber head (discussed above) and the new preionizer designed reduced acoustic shock so that acoustic baffles were not needed.
This preferred embodiment of the present invention includes major improvements in the prior art gas circulator which has greatly improved laser performance. These improvements are in the construction of a braze free blower blade structure. A new non-symmetrical blade arrangement which greatly decreases resonance effects and improved bearings.
Silicon Free Fan Blade Structure
Applicants have discovered that a brazing material commonly used in blower blade construction was the primary source of SiF6 in the laser chamber. This gas significantly degraded laser performance for KrF lasers but was a total disaster for ArF lasers and F2 lasers. Applicants have identified four solutions to this problem. First the blade structure was machined in segments from a solid block of material (in this case aluminum). Another solution was to cast the blade structure in segments. The segments then are welded together using electron beam welding in which no new material is added. It is also feasible to fabricate the blade structure by joining blades to a frame structure but in this case the joining is by electron beam welding instead of the prior art brazing process. The fourth method is to join the blade to a frame structure using a soldering process using a silicon free solder. Aluminum 6061 is used as the base material for all of the component pieces. These parts are then copper-plated in prelude to the soldering process. With all of the parts assembled, the fan is then soldered together using a low temperature solder, typically 91% tin (Sn) and 9% Zinc (Zn) in a vacuum furnace. This solder is chosen due to its lack of silicon and its ability to work with copper plated aluminum. The assembled and soldered fan is then nickel-plated. This method of construction yields a non-silicon fan that is inexpensive to manufacture.
Reducing Resonance Effects
Prior art blower blade structures consisted of a tangential blower with 23 longitudinal blades. These blades were mounted symmetrically at the circumference of the structure. Substantial resonance effects were measured both with respect to fan parameters and actual laser performance. Perturbations in the laser beam were shown to correspond to acoustic waves at 23 times the rotating frequency of the fan. Adverse affects on bearing performance were also measured corresponding to 23 times the fan's rotating frequency.
Improvements in fan structure design call for a non symmetrical blade arrangement such as that shown in FIG. 14A. An alternative as shown in
Embodiments of the present invention will be made available with one of two alternative bearing improvements over the prior art.
Ceramic Bearings
A preferred embodiment of the present invention includes ceramic bearings. The preferred ceramic bearings are silicon nitride lubricated with a synthetic lubricant, preferably perfluoropolyalkylether (PFPE). These bearings provide substantially greater life as compared to prior art excimer laser fan bearings. In addition, neither the bearings nor the lubricant are significantly affected by the highly reactive fluorine gas.
Magnetic Bearings
Another preferred embodiment of the present invention comes with magnetic bearings supporting the fan structure as shown in FIG. 5. In this embodiment, the shaft 130 supporting the fan blade structure 146 is in turn supported by an active magnetic bearing system and driven by a brushless DC motor 130 in which the rotor 129 of the motor and the rotors 128 of at least two bearings are sealed within the gas environment of the laser cavity and the motor stator 140 and the coils 126 of the magnetic bearing magnets are located outside the gas environment. This preferred bearing design also includes an active magnetic thrust bearing 124 which also has the coils located outside the gas environment.
As shown in
A preferred pulse power system is manufactured in four separate modules as indicated in
High Voltage Power Supply Module
High voltage power supply module 20 comprises a 300 volt rectifier 22 for converting 208 volt three phase plant power from source 10 to 300 volt DC. Inverter 24 converts the output of rectifier 22 to high frequency 300 volt pulses in the range 100 kHz to 200 kHz. The frequency and the on period of inverter 24 are controlled by the HV power supply control board 21 in order to provide course regulation of the ultimate output pulse energy of the system. The output of inverter 24 is stepped up to about 1200 volts in step-up transformer 26. The output of transformer 26 is converted to 1200 volts DC by rectifier 28 which includes a standard bridge rectifier circuit 30 and a filter capacitor 32. DC electrical energy from circuit 30 charges 8.1 μF C0 charging capacitor 42 in commutator module 40 as directed by HV power supply control board 21 which controls the operation of inverter 24 as shown in FIG. 8A. Set points within HV power supply control board 21 are set by laser system control board 100.
The reader should note that in this embodiment as shown in
Commutator module 40 comprises C0 charging capacitor 42, which in this embodiment is a bank of capacitors connected in parallel to provide a total capacitance of 8.1 μF. Voltage divider 44 provides a feedback voltage signal to the HV power supply control board 21 which is used by control board 21 to limit the charging of capacitor 42 to the voltage (called the "control voltage") which when formed into an electrical pulse and compressed and amplified in commutator 40 and compression head 60 will produce the desired discharge voltage on peaking capacitor 82 and across electrodes 83 and 84.
In this embodiment (designed to provide electrical pulses in the range of about 3 Joules and 16,000 volts at a pulse rate of 2000 Hz pulses per second), about 250 microseconds (as indicated in FIG. 8F1) are required for power supply 20 to charge the charging capacitor 42 to 800 volts. Therefore, charging capacitor 42 is fully charged and stable at the desired voltage when a signal from commutator control board 41 closes solid state switch 44 which initiates the very fast step of converting the 3 Joules of electrical energy stored on charging capacitor C0 into a 16,000 volt discharge across electrodes 83 and 84. For this embodiment, solid state switch 46 is a IGBT switch, although other switch technologies such as SCRs, GTOs, MCTs, etc. could also be used. A 600 nH charging inductor 48 is in series with solid state switch 46 to temporarily limit the current through switch 46 while it closes to discharge the C0 charging capacitor 42.
Pulse Generation Stage
The first stage of high voltage pulse power productions is the pulse generation stage 50. To generate the pulse the charge on charging capacitor 42 is switched onto C1 8.5 μF capacitor 52 in about 5 μs as shown on FIG. 8F2 by closing IGBT switch 46.
First Stage of Compression
A saturable inductor 54 initially holds off the voltage stored on capacitor 52 and then becomes saturated allowing the transfer of charge from capacitor 52 through 1:23 step up pulse transformer 56 to Cp-1 capacitor 62 in a transfer time period of about 550 ns, as shown on FIG. 8F3, for a first stage of compression 61.
The design of pulse transformer 56 is described below. The pulse transformer is extremely efficient transforming a 700 volt 17,500 ampere 550 ns pulse rate into a 16.100 volt, 760 ampere 550 ns pulse which is stored very temporarily on Cp-1 capacitor bank 62 in compression head module 60.
Compression head module 60 further compresses the pulse.
Second Stage of Compression
An Lp-1 saturable inductor 64 (with about 125 nH saturated inductance) holds off the voltage on 16.5 nF Cp-1 capacitor bank 62 for approximately 550 ns then allows the charge on Cp-1 to flow (in about 100 ns) onto 16.5 nF Cp peaking capacitor 82 located on the top of laser chamber 80 and which is electrically connected in parallel with electrodes 83 and 84 and preionizer 56A. This transformation of a 550 ns long pulse into a 100 ns long pulse to charge Cp peaking capacitor 82 makes up the second and last stage of compression as indicated at 65 on FIG. 8A.
About 100 ns after the charge begins flowing onto peaking capacitor 82 mounted on top of and as a part of the laser chamber module 80, the voltage on peaking capacitor 82 has reached about 14,000 volts and discharge between the electrodes begins. The discharge lasts about 50 ns during which time lasing occurs within the optical resonance chamber of the excimer laser. The optical resonance chamber is defined by a line selection package 86 comprised in this example by a 2 prism wavelength selector and a R-max mirror together, indicated as 86 in FIG. 8A and an output coupler 88. The laser pulse for this laser is a narrow band, 20 to 50 ns, 157 nm pulse of about 10 ml and the repetition rate up to 2000 pulses per second. The pulses define a laser beam 90 and the pulses of the beam are monitored by photodiode 92, all as shown in FIG. 8A.
The signal from photodiode 92 is transmitted to processor 102 in control board 100 and the processor uses this energy signal and preferably other historical pulse energy data (as discussed below in the section entitled Pulse Energy Control Algorithm) to set the command voltage for the next and/or future pulses. In a preferred embodiment in which the laser operates in a series of short bursts (such as 100 pulse 0.5 second bursts at 2000 Hz separated by a dead time of about 0.1 second) processor 102 in control board 100 is programmed with a special algorithm which uses the most recent pulse energy signal along with the energy signal of all previous pulses in the burst along with other historical pulse profile data to select a control voltage for the subsequent pulse so as to minimize pulse-to-pulse energy variations and also to minimize burst-to-burst energy variations. This calculation is performed by processor 102 in control board 100 using this algorithm during a period of about 35 μs. The laser pulses occurs about 5 μs following the T0 firing of IGBT switch 46 shown on FIG. 8F3 and bout 20 μs are required to collect the laser pulse energy data. (The start of the firing of switch 46 is called T0.) Thus, a new control voltage value is thus ready (as shown on FIG. 8F1) about 70 microseconds after the firing of IGBT switch 46 for the previous pulse (at 2,000 Hz the firing period is 500 μs). The features of the energy control algorithm are described below and are described in greater detail in U.S. patent application Ser. No. 09/034,870 which is incorporated herein by reference.
This preferred embodiment is provided with electronic circuitry which recovers excess energy onto charging capacitor 42 from the previous pulse. This circuitry substantially reduces waste energy and virtually eliminates after ringing in the laser chamber 80.
The energy recovery circuit 57 is comprised of energy recovery inductor 58 and energy recovery diode 59, connected in series across Co charging capacitor 42 as shown in FIG. 8B. Because the impedance of the pulse power system is not exactly matched to that of the chamber and due to the fact that the chamber impedance varies several orders of magnitude during the pulse discharge, a negative going "reflection" is generated from the main pulse which propagates back from the chamber towards the front end of the pulse generating system. After the excess energy has propagated back through the compression head 60 and the commutator 40, switch 46 opens up due to the removal of the trigger signal by the controller. The energy recovery circuit 57 reverses the polarity of the reflection which has generated a negative voltage on the charging capacitor 42 through resonant free wheeling (a half cycle of ringing of the L-C circuit made up of the charging capacitor 42 and the energy recovery inductor 58) as clamped against reversal of current in inductor 58 by diode 59. The net result is that substantially all of the reflected energy from the chamber 80 is recovered from each pulse and stored on charging capacitor 42 as a positive charge ready to be utilized for the next pulse. FIGS. 8F1, 2 and 3 are time line charts showing the charges on capacitor Co, C1, Cp-1 and Cp. The charts show the process of energy recovery on Co.
In order to completely utilize the full B-H curve swing of the magnetic materials used in the saturable inductors, a DC bias current is provided such that each inductor is reverse saturated at the time a pulse is initiated by the closing of switch 46.
In the case of the commutator saturable inductors 48 and 54, this is accomplished by providing a bias current flow of approximately 15 A backwards (compared to the directional normal pulse current flow) through the inductors. This bias current is provided by bias current source 120 through isolation inductor LB1. Actual current flow travels from the power supply through the ground connection of the commutator, through the primary winding of the pulse transformer, through saturable inductor 54, through saturable inductor 48, and through isolation inductor LB1 back to the bias current source 120 as indicated by arrows B1.
In the case of compression head saturable inductor, a bias current B2 of approximate 5A is provided from the second bias current source 126 through isolation inductor LB2. At the compression head, the current splits and the majority B2-1 goes through saturable inductor Lp-b 164 and back through isolation inductor LB3 back to the second bias current source 126. A smaller fraction of the current B2-2 travels back through the HV cable connecting the compression head 60 and the commutator 40, through the pulse transformer secondary winding to ground, and through a biasing resistor back to the second bias current source 126. This second smaller current is used to bias the pulse transformer so that it is also reset for the pulsed operation. The mount of current which splits into each of the two legs is determined by the resistance in each path and is intentionally adjusted such that each path receives the correct amount of bias current.
In this embodiment, we refer to the flow of pulse energy through the system from a standard three-phase power source 10 to the electrodes and to ground beyond electrode 84 as "forward flow" and this direction as the forward direction. When we refer to an electrical component such as a saturable inductor as being forward conducting we mean that it is biased into saturation to conduct "pulse energy" in a direction toward the electrodes. When it is reverse conducting it is biased into saturation to conduct energy in a direction away from the electrodes toward the charging capacitor. The actual direction of current flow (or electron flow) through the system depends on where you are within the system. The direction of current flow is now explained to eliminate this as a possible source of confusion.
By reference to
A more detailed circuit diagram of the power supply portion of the preferred embodiment is shown in FIG. 8C. As indicated in
Three bridge rectifier circuits 30A, 30B and 30C are shown. The HV power supply control board 21 converts a 12 bit digital command to an analog signal and compares it with a feedback signal 45 from Co voltage monitor 44. When the feedback voltage exceeds the command voltage, inverter 24A is turned off as discussed above. Q2 switch 34 closes to dissipate stored energy within the supply. Q3 isolation switch 36 opens to prevent any additional energy leaving the supply and Q1 bleed switch 38 closes to bleed down the voltage on Co 42 until the voltage on Co equals the command voltage. At that time Q1 opens.
The principal components of commutator 40 and compression head 60 are shown on
In this preferred embodiment solid state switch 46 is an P/N CM 1000 HA-28H IGBT switch provided by Powerex, Inc. with offices in Youngwood, Pa.
Inductors 48, 54 and 64 comprise saturable inductors similar to those described in U.S. Pat. Nos. 5,448,580 and 5,315,611. A top and section view of a preferred saturable inductor design is shown respectively in FIGS. 8G1 and 8G2. In the inductors of this embodiment, flux excluding metal pieces such as 301, 302, 303 and 304 are added as shown in FIG. 8G2 in order to reduce the leakage flux in the inductors. The current input to this inductor is a screw connection at 305 to a bus also connected to capacitor 62. The current makes four and one half loops through vertical conductors. From location 305 the current travels down a large diameter conductor in the center labeled 1A, up six smaller conductors on the circumference labeled 1B, down 2A, up 2B, down all of the flux excluder elements, up 3B, down 3A, up 4B and down 4A, and the current exits at location 306. Where a pot like housing 64A serves as a high voltage current lead. The "lid" 64B of the saturable inductor is comprised of an electrical insulator material such as teflon. In prior art pulse power systems, oil leakage from oil insulated electrical components has been a problem. In this preferred embodiment, oil insulated components are limited to the saturable inductors and the oil is contained in the pot-like oil containing metal housing 64A which is, as stated above, the high voltage connection output lead. All seal connections are located above the oil level to substantially eliminate the possibility of oil leakage. For example, the lowest seal in inductor 64 is shown at 308 in FIG. 8G2. Since the flux excluding metal components are in the middle of the current path through the inductor, the voltage allowing a reduction in the safe hold-off spacing between the flux exclusion metal parts and the metal rods of the other turns. Fins 307 are provided to increase heat removal.
Capacitor banks 42, 52 and 62 are all comprised of banks of commercially available off-the-shelf capacitors connected in parallel. These capacitors are available from suppliers such as Murata with offices in Smyrna, Ga. Applicants preferred method of connecting the capacitors and inductors is to solder or bolt them to positive and negative terminals on special printed circuit board having heavy nickel coated copper leads in a manner similar to that described in U.S. Pat. No. 5,448,580.
Pulse transformer 56 is also similar to the pulse transformer described in U.S. Pat. Nos. 5,448,580 and 5,313,481; however, the pulse transformers of the present embodiment has only a single turn in the secondary winding and 23 separate primary windings. A drawing of pulse transformer 56 is shown in FIG. 8D. Each of the 23 primary windings comprise an aluminum spool 56A having two flanges (each with a flat edge with threaded bolt holes) which are bolted to positive and negative terminals on printed circuit board 56B as shown along the bottom edge of FIG. 8D. Insulators 56C separates the positive terminal of each spool from the negative terminal of the adjacent spool. Between the flanges of the spool is a hollow cylinder 1{fraction (1/16)} long with a 0.875 OD with a wall thickness of about {fraction (1/32)} inch. The spool is wrapped with one inch wide, 0.7 mil thick Metglas™ 2605 S3A and a 0.1 mil thick myler film until the OD of the insulated Metglas™ wrapping is 2.24 inches. A prospective view of a single wrapped spool forming one primary winding is shown in FIG. 8E.
The secondary of the transformer is a single stainless steel rod mounted within a tight fitting insulating tube of electrical glass. The winding is in four sections as shown in FIG. 8D. The stainless steel secondary shown as 56D in
The Cp capacitor 82 is comprised of a bank of twenty-eight 0.59 nf capacitors mounted on top of the laser chamber pressure vessel. The electrodes 83 and 84 are each solid brass bars about 28 inches long which are separated by about 0.5 to 1.0 inch. In this embodiment, the top electrode 83 is the cathode and the bottom electrode 84 is connected to ground as indicated in FIG. 8A.
This preferred embodiment of the present invention includes a compression head mounting technique shown in FIGS. 8H1 and 8H2. FIG. 8H1 is a side section view of the laser system showing the location of the compressor head module 60 in relation to electrodes 83 and 84. This technique was designed to minimize the impedance associated with the compression lead chamber connection and at the same time facilitates quick replacement of the compression head. As shown in FIGS. 8H1 and 8H2 the ground connection is made with an approximately 28 inch long slot tab connection along the back side of the compression head as shown at 81A in FIG. 8H1 and 81B in FIG. 8H2. The bottom of the slot tab is fitted with flexible finger stock 81C. A preferred finger stock material is sold under the trade name Multilam®.
The high voltage connection is made between a six-inch diameter smooth bottom of saturable inductor 64 and a mating array of flexible finger stock at 89 in FIG. 8H1. As above, a preferred finger stock material is Multilam®. This arrangement permits the replacement of the compression head module for repair or preventative maintenance in about five minutes.
This preferred embodiment comprises a fluorine control system which permits operation within a chosen sweet spot without the use of a fluorine monitor. This embodiment can be described by reference to FIG. 16.
Laser chamber 1 comprises about 20.3 liters of laser gas. Nominally as described above, the constituents are 0.1 percent fluorine, and the remainder helium at a pressure of about 4 atmospheres. The 0.1 percent fluorine represents a volume of about 0.0023 liters or 2.3 ml of fluorine at 4 atm. In mass terms the nominal amount of fluorine in the laser chamber is about 110 mg. The partial pressure of the pure fluorine is about 411 Pa, pure fluorine (corresponding to about 41 kPa of the 1% fluorine mixture). During normal operations with the laser operating at a duty factor of about 40 percent (which is typical for a lithography laser) fluorine is depleted at a rate of about 4.5 mg per hour (this corresponds to about 4% of the fluorine in the chamber per hour). In terms of partial pressure of pure fluorine, this normal depletion rate of fluorine is about 16 Pa per hour. To make up for this depletion using the 1% fluorine gas mixture, a volume of the mixture equivalent to about 1.6 kPa per hour is added to the chamber.
The fluorine depletion rate for the laser is far from constant. If the laser fan is operating but no lasing is taking place the fluorine depletion rate is cut approximately in half. If the fan is shutdown the fluorine depletion rate is cut to about ¼ the 40% duty factor depletion rate. At 100% duty factor the depletion rate is about double the 40% duty factor depletion rate.
The process described above basically replaces depleted fluorine on an almost continuous basis. Since the fluorine gas source is only 1% fluorine it also replaces a portion of the He in the chamber on an almost continuous basis. Nevertheless, even through a portion of the laser gas is being substantially continuously replaced, operation in this mode results in a build up of contaminants in the laser gas which reduces the efficiency of the laser. This reduction in efficiency requires an increase in the voltage and/or an increase in the fluorine concentration to maintain the desired pulse energy. For this reason, normal practice with prior art systems suggest that periodically the laser be shutdown for a substantially complete gas exchange. This substantially complete gas exchange is referred to as a refill. These periods may be determined based on number of laser pulses such as 100,000,000 pulses between refills, or refill times may be determined based on calendar time since the last refill or a combination of pulses and calendar time. Also the refill times may be determined by the magnitude of the charging voltage needed for a desired output at a particular fluorine concentration. Preferably after a refill a new test for the "sweet spot" should be run. Also, periodically in between fills the sweet spot test should be performed so that if the sweet spot changes the operator will know where the new sweet spot is.
A refill may be accomplished using the system shown in
Because O2 strongly absorbs 157 mn light, O2 must be excluded from the beam path. Applicants have developed an N2 purge system that is greatly improved over prior art systems. All optical components associated with the laser that are outside the chamber are purged with nitrogen. This nitrogen system is operated at a pressure that is during operation of the laser only about 10 pascals in excess of atmospheric pressure. This small pressure differential is preferred to avoid a pressure distortion effect on the optical components. Components purged include the line narrowing module, the output coupler, the wavemeter and the shutter assembly.
Seals are provided at all potential leakage sites output ports connecting of {fraction (1/16)}-inch id. tubes about 6 feet long are provided. The flow through the output ports is monitored to assure proper functioning of the purge system. Preferred flow rates of about 41/minute through the {fraction (1/16)}-inch id. 6-foot long tube is preferred flow rate to correspond to the desired N2 pressure differential.
Preferred embodiments of the present invention which is especially useful for operation at repetition rates in excess of 1000 to 2000 Hz, includes a unique cooling technique shown in
Components of the laser are contained in enclosure 240 which is maintained on the inside at a slight vacuum produced by a blower mounted in a vent as shown at 224 in
The very great majority (roughly 90 percent) of the waste heat produced by the laser (roughly 12 kw at 100% duty factor) is removed by a chilled water system as shown in FIG. 13.
In this embodiment the major heat sources in the laser are the high voltage supply 20, the commutator 40, the compression head 60 and the laser chamber 80. For the chamber a water cooled heat exchanger is located inside the chamber and heat is transferred from circulating laser gas to the heat exchanger to the cooling water. Another heat exchanger (not shown) is mounted on an outside surface of the chamber. For the rest of the major heat producing components cooling water is piped to the location of the component and one or more fans force air through a water-to-air heat exchanger onto the component as shown in FIG. 13. For the compression head the circulation is contained as shown, but for the HVPS and the commutator the circulation is onto the component then through other portions of the enclosure to also cool other components before being recirculated back to the heat exchangers.
Dividing pans 242 and 243 guide the general ventilation air from filter 241 through a path shown by open headed arrows 244 to vent 224.
This cooling system contains no ducts and except for a water line feeding the heat exchangers inside of and attached to the laser chamber there is no water line connection to any laser component. Since all components (other than the laser chamber) are cooled by air blown about inside the enclosure, there are no cooling connections to make a break when installing and replacing components. Also, the lack of need for ducting greatly increases useable components and working space inside the enclosure.
The embodiment of the present invention includes a computer controller program with a new algorithm, which substantially reduces prior art variations in pulse energy and total integrated burst energy. The improved equipment and software and a preferred process for reducing energy sigma and burst dose variation is described below.
As stated in the background section of this specification, the burst mode is a typical mode of operation of an excimer laser used for the light source of a stepper machine in the lithographic production integrated circuits. In this mode the laser is operated to produce "a burst" of pulse at the rate of 1000 Hz for about 110 milliseconds to produce 110 pulses to illuminate a section of a wafer. After the burst the stepper moves the wafer and the mask and once the move is complete which takes typically a fraction of a second the laser produces another 110 pulse burst. Thus, normal operation is bursts of about 110 milliseconds followed by dead times of a fraction of a second. At various times, longer dead time periods will be provided to that other operations can be performed. This basic process continues 24 hours a day, 7 days per week, for several months with the laser typically producing several millions of bursts per day. In the above burst mode, it is usually important that each section of the wafer received the same illumination emerge on each burst. Also, chip makers want the pulse to pulse variation to be minimized.
This preferred embodiment of the present invention accomplishes these objectives with equipment and software which monitors the energy of each pulse (pulse N-1) then controls the energy of the next pulse (pulse N) based on the results of a:
1) a comparison of the measured energy of pulse N-1 with a target pulse energy and
(2) a comparison of the accumulated dose of the burst through pulse N-1 to a target pulse dose through pulse N-1.
In the typical F2 excimer laser we have been discussing the energy of the first 30-40 ms of a burst in typically less stable than the rest of the burst due to transient effects in the laser gas. After about 40 ms following the first pulse, the pulse energy at constant voltage is relatively constant. In dealing with these early perturbations. Applicants have separated the burst into two time-wise regions, the first region (consisting of a number of the earlier pulses, for example, 40 pulses) called the "K" region and a second region (consisting of the pulses which follow the K region) which Applicants, in this specification, refer to as the "L" region.
This embodiment of the present invention utilizes prior art excimer laser equipment for pulse energy control. Pulse energy of each pulse of each burst is measured by photodiode 92 as shown in FIG. 8A. The overall response time of this photodiode and its sample and hold circuit, including time required to reset the circuit, is less than substantially less than 500 microseconds. The accumulated signal resulting from each approximately 15 ns pulse is stored a few microseconds after the pulse is over and this signal is read six times and the average is stored by computer controller 22 approximately 1.0 microsecond after the beginning of the pulse. The accumulated energy of all the previous individual pulses in a burst is referred to as the burst dose value. Computer controller utilizes the signal representing the pulse energy of pulse N along with target pulse energy and the burst dose value in order to specify the high voltage for the pulse N+1. This calculation requires about 200 microseconds. When the value of high voltage for N+1 is determined, computer controller sends a signal to the high voltage command (VCMD) of the high voltage power supply as shown in
A special preferred process for adjusting the charging voltage to achieve substantially desired pulse energies when operating in a burst mode is described below.
The process utilizes two voltage adjustment algorithms. The first algorithm applies to the first 80 pulses and is called the KPI algorithm. The second algorithm called the PI algorithm applies to pulses after pulse number 40. This time period after the 80th pulse is herein called the "L region" of the burst. The initials "PI" refer to "proportional integral" and the "K" in "KPI" refers to the "K region" of the burst.
The K region comprises pulses 1 through k, where k=40 for this preferred embodiment. The algorithm for setting the charging voltage for pulse N is:
where:
VN=charging voltage for N'th pulse
(VB)N=an array of k stored voltages which represent the current best estimate of the voltage required to produce the target energy ET for the N'th pulse in the K region. This array is updated after each burst according to the equation below.
(VC)N-1=a voltage correction based the energy error of the previous pulse and on the energy errors which occurred for the previous pulses in the burst, up to pulse N-1
By definition, (Vc)o=0
A,B=fractions typically between 0 and 1, which in this preferred embodiment both A and B are 0.5
εi=the energy error of the i'th pulse =Ei-ET, where Ei is the energy for the i'th pulse, and ET is the target energy
Di=the cumulative dose error of the burst, including all pulses from 1 through i
dE/dV=a rate of change of pulse energy with charging voltage. (In this embodiment, one or more values of dE/dV is determined experimentally during each burst and a running average of these values is used for the calculation)
The stored values (VB)N are updated during or after each burst according to the following relation:
where the index M refers to the burst number
C=a fraction typically between 0 and 1, which in this preferred embodiment is 0.3.
The L region comprises pulses k+1 to the end of the burst (for a preferred embodiment, pulse numbers 41 and higher). The algorithm for setting the charging voltage for pulse N is:
where:
VN=charging voltage for N'th pulse
VN-1=charging voltage for N-1'st (previous) pulse
The variables A, B, εi, D1, and dE/dV are defined as before.
A new value for dE/dV is determined periodically, in order to track the relatively slow changes in the characteristics of the laser. In the preferred embodiments, dE/dV is measured by varying or dithering the voltage in a controlled manner during two successive pulses in the L region. For these two pulses, the normal PI energy control algorithm is temporarily suspended and replaced by the following:
For pulse j:
where VDither=a fixed voltage increment, typically a few volts
For pulse j+1:
After pulse j+1, dE/dV is calculated:
The calculation of dE/dV can be very noisy, since the expected energy changes due to the dithering voltage can be of the same magnitude as the normal energy variation of the laser. In the preferred embodiment, a running average of the last 50 dE/dV calculations is actually used in the PI and KPI algorithms.
The preferred method for VDither choosing is to specify a desired energy dither EDither, typically a few percent of the energy target ET, and then use the current (averaged) value for dE/dV to calculate VDither:
Pulse j+2 (immediately following the two dithered pulses) is not dithered, but has the special value:
This special value for Vj+2 is corrected for both the applied voltage dither and the expected energy dither from pulse j+1.
Many variations on the algorithm described above are possible. For example, dE/dV can be determined in the L region as well as the K. The dithering can be performed once per burst, or several times. The dithering sequence may be performed at a fixed pulse number j as described above, or it may be initiated for a randomly chosen pulse number which varies from one burst to the next.
The reader should recognize that A, B and C are convergence factors, which could have many other values. Higher values than those specified above could provide quicker convergence but could lead to increased instability. In another preferred embodiment, A={square root over (2B)} . This relationship is developed from a recognized technique to produce critical damping. B could be zero in which case there would be no dose correction; however, A should not be zero because it provides a dampening term for the dose conveyance portions of the algorithm.
If the determined value of dE/dV becomes too small the above algorithm could cause over correction. Therefore a preferred technique is to arbitrarily double dE/dV if the energy sigma value exceeds a threshold. Default values of V and dE/dV are provided for the first pulse of a burst. D is set to zero at the start of each burst. The default dE/dV is set at about three times the expected dE/dV to avoid initial over correction.
An alternate method for determining dE/dV without the dither referred to above is to merely measure and store the energy and voltage values during laser operation. (Measured rather than specified voltage values can also be used.) These data can be used to determine dE/dV as a function of V for constant pulse energy. The reader should note that each individual value of dE/dV would contain fairly large uncertainties because the elements of the value are differences of measurements having significant uncertainties. However, averaging large number of dE/dV values can reduce these uncertainties. The dither exercise to determine dE/dV does not have to be made on each burst but instead could be done periodically such as once every M bursts. Or the measurement of dE/dV could be replaced by a calculation performed by the computer or the value of dE/dV could be inserted manually by the operator of the previous pulse for the calculation of VN+1. An alternate approach would be to use the actual measured value for VN for this control system. Also the value of VBIN are calculated from specified values, not actual measure values in the above-described embodiment. An obvious alternative would be to use measured voltage values. ET is normally a constant value such as 10 mJ but it does not have to be constant. For example, ET of the last ten pulses could be smaller than the nominal pulse energy so that percentage deviations from target ET for these pulses would have a smaller effect on the integrated pulse dose. Also, it may be preferable in some situations to program computer controller 22 to provide ET values that vary from burst to burst.
A prototype F2 laser system unit was built and tested by Applicants and their fellow workers.
The prototype laser is largely based on current production KrF and ArF lasers incorporating several important improvements over prior art excimer laser systems, utilizing a high efficiency chamber and solid-state pulsed power excitation. The discharge is corona pre-ionized to minimize gas contamination. The entire optical beam path is nitrogen purged to avoid light absorption by oxygen and to avoid damage to optical components. All resonator optics were external to the angled chamber window equipped laser chamber. The gas mixture was 0.1% fluorine in 4 atmospheres of helium and the electrode gap was reduced to 10 mm.
With this unit, Applicants have successfully demonstrated the key parameters for a prototype lithography fluorine laser with only few straight-forward changes in an ArF laser currently in development.
Experimental results from experiments with the prototype unit are described below. The laser power was measured by a standard power meter and cross-correlated with a piezo-electric Joulemeter. Contributions of the red, atomic fluorine laser were subtracted and usually amounted to less than 1% of the total energy. By venting the beam delivery tubes to air, which strongly absorbs 157 nm light, the red radiation could be measured.
The laser wavelength in this prototype unit was operated in single-line mode at 157.6 nm by tuning with a set of two external prisms. The laser could also be tuned to the 157.5 nm transition line with reduced efficiency. The transition at 156.7 run was not observed. The laser spectrum as recorded by a 2 meter Jobin Yvon VUV spectrometer indicates a measurement-limited linewidth of 6 pm.
In broadband (or multi-line) operation a maximum power of 12 W was obtained at a repetition rate of 1000 Hz. The power increased linearly with repetition rate without signs of saturation. The behavior in single line mode was similar, but at one third of the energy. This energy decrease is due to a large cavity length increase in the present prism set-up and can be significantly reduced. In burst mode a 3 sigma stability of 5% was recorded. Only a benign burst transient on the output energy was observed. This compares favorably to ArF lasers which show larger energy instability and a gas flow related burst transient. From this one can conclude that a production fluorine lithography laser will have even better energy stability than present day ArF lasers. The integral square pulse duration was 30 ns which is approaching the performance of ArF lasers.
Careful selection of laser chamber materials and preionization by a corona discharge enabled laser operation without cryogenic purification and without halogen injection over a period of several hours and 3 M shots with minimal energy degradation.
The dependence of broadband laser power upon repetition rate is displayed in the top portion of FIG. 10A. The bottom portion of
A good measure for energy stability is gained by observing the energy transient in burst mode. For this the laser is repeatedly fired in bursts and the average energy for every pulse position in the burst is recorded. Also, for every pulse number in the burst the average variation in energy from burst to burst is calculated. The resulting energy and stability curves for the fluorine laser and for comparison also for a line-narrowed ArF laser are displayed in FIGS. 10B1 and 2. The fluorine laser exhibits only minor energy variations over a 120 shot burst. The energy stability shows an initial increase in the beginning of the bursts and then stabilizes on a 3 sigma level of about 3%. By contrast the ArF laser exhibits a large transient in the energy and a 3 sigma instability around 7%. The ArF laser obtained a dose stability of 0.5% in a 60 pulse window, therefore the fluorine laser is expected to deliver at least the same dose stability.
A spectrum of the broadband fluorine laser as recorded by VUV spectrometer is shown in FIGS. 10D1 and 2. Clearly visible are the two transition lines at 157.52 nm and at 157.63 nm, 87% of the laser energy is located in the longer wavelength line at 157.63 nm. The transition at 156.7 nm was not observed. Single-line mode operation at 157.63 nm was achieved by tuning with a set of two external prisms. The laser could also be tuned to the 157.52 nm transition line, but at reduced efficiency. Also shown in FIGS. 10D1 and 2 is an expanded view of the laser line at 157.63 nm. Convolved linewidths of 1.14 pm FWHM and 2.35 pm 95% were measured. These linewidths are much narrower than previously expected. Therefore, a line selected fluorine laser without additional line-narrowing will be sufficient for all but fully refractive imagine systems. The laser power vs. repetition rate behavior of the single line laser exhibits the same linear rise as the broadband laser. However, the maximum power in this initial experiment was limited to 4 W. The reduced output power was caused by reflection losses in the line selection optics and by an overly long cavity length.
The horizontal and vertical beam profiles were measured at 1 m distance from the laser. (See FIGS. 10E and 2). The beam shows smooth profiles with a high degree of symmetry. These kinds of profiles are easily managed by currently used homogenizer technology to produce very uniform illumination.
As estimation of the gas lifetime is derived by operating the fluorine laser at constant voltage without fluorine injection and recording the evolution of laser power versus the number of shots. No cryogenic purification was used in these measurements. As evident in
Although this F2 laser system has been described with reference to a particular embodiment, it is to be appreciated that various adaptations and modifications may be made. For example, many alternative embodiments are discussed in the patent applications listed in the first sentence of this specification, all of which have been incorporated herein by reference. An etalon output coupler could be used to provide additional line narrowing. The buffer gas could be neon instead of helium. The invention is to be limited only by the appended claims.
Das, Palash P., Sandstrom, Richard L., Partlo, William N., Hofmann, Thomas, Morton, Richard G., Ishihara, Toshihiko, Ness, Richard M., Besaucele, Herve A., Newman, Peter C., Duffey, Thomas P., Hueber, Jean-Marc, Melchior, John T., Rothweil, Daniel A.
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