Catadioptric reduction projection optical system and exposure apparatus having the same

Abstract

A catadioptric projection optical system is provided, which can use a beam splitting optical system smaller in size than a conventional polarizing beam splitter, can set a long optical path from a concave reflecting mirror to an image plane, allows easy adjustment of the optical system, and has excellent imaging performance. A light beam from an object surface forms a first intermediate image through a refracting lens group. A light beam from the first intermediate image passes through a polarizing beam splitter and is reflected by a concave reflecting mirror to form a second intermediate image in the polarizing beam splitter. A light beam from the second intermediate image is reflected by the polarizing beam splitter means to form a final image on the image plane via a refracting lens group. The polarizing beam splitter means is arranged near the positions at which the intermediate images are formed.

Description

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a catadioptric reduction optical system suitably applied to a projection optical system for reduction projection in a projection exposure apparatus of a one-shot exposure method or a scanning exposure method, used to manufacture a semiconductor element or a liquid crystal display element in a photolithographic process and, more particularly, to a catadioptric reduction projection optical system having a magnification of about 1/4 to 1/5 with a resolution on the submicron order in the ultraviolet wavelength range.

2. Related Background Art

In fabricating semiconductor devices or liquid crystal display devices, etc. by photolithography process, the projection exposure apparatus is used for demagnifying through a projection optical system a pattern image on a reticle (or photomask, etc.) for example at a ratio of about 1/4 to 1/5 to effect exposure of the image on a wafer (or glass plate, etc.) coated with a photoresist and the like.

With the recent increase in the integration degree of semiconductor elements and the like, a higher resolution is required for a projection optical system used in a projection exposure apparatus. In order to meet this requirement, the wavelength of illumination light (exposure wavelength) for exposure must be shortened, or the numerical aperture (NA) of the projection optical system must be increased. If, however, the exposure wavelength is shortened, the types of optical glass which can be used in practice are limited because of the absorption of illumination light. In particular, as the exposure wavelength becomes 300 nm or less, only synthetic quartz and fluorite can be used in practice as glass materials.

The difference between the Abbe constants of the synthetic quartz and the fluorite is not large enough to correct chromatic aberration. For this reason, if the exposure wavelength becomes 300 nm or less, and a projection optical system is constituted by only a refracting optical system, chromatic aberration correction is very difficult to perform. In addition, since fluorite undergoes a considerable change in refractive index with a change in temperature, i.e., has poor temperature characteristics, and involves many problems in a lens polishing process, fluorite cannot be used for many portions. It is, therefore, very difficult to form a projection optical system having a required solution by using only a refracting system.

In contrast to this, attempts have been made to form a projection optical system by using only a reflecting system. In this case, however, the projection optical system increases in size and requires aspherical reflecting surfaces. It is very difficult to manufacture large, high-precision, aspherical surfaces

Under the circumstances, various techniques have been proposed to form a reduction projection optical system by using a so-called catadioptric optical system constituted by a combination of a reflecting system and a refracting system consisting of optical glass usable in relating to the exposure wavelength to be used. As an example, a reduction projection exposure apparatus including a catadioptric projection optical system having a beam splitter constituted by a cubic prism and serving to project a reticle image entirely by using a light beam near the optical axis is disclosed in, e.g., U.S. Pat. Nos. 4,953,960, 5,220,454, 5,089,913, or 5,402,267.

SUMMARY OF THE INVENTION

The present invention has as its object to provide a catadioptric reduction projection optical system which can use a beam splitting optical system smaller in size than a conventional polarizing beam splitter, can set a long optical path from a concave reflecting mirror to the image plane, can easily adjust the optical system, and has excellent imaging performance.

It is another object of the present invention to provide a catadioptric reduction projection optical system which can reduce the size of a beam splitting optical system such as a polarizing beam splitter and still has a space in which an aperture stop can be arranged.

It is still another object of the present invention to provide a catadioptric reduction projection optical system which uses a compact beam splitting optical system and can be applied to a projection optical apparatus of the scanning exposure scheme.

The catadioptric reduction projection optical system can be applied to a projection exposure apparatus of a scanning exposure method, based on use of a compact beam splitting means such as a polarizing beam splitter and the like. Besides a projection exposure apparatus of a one-shot exposure method, the catadioptric reduction projection optical system can be also applied to a recent apparatus employing a scanning exposure method such as the slit scan method or the step-and-scan method, etc. for effecting exposure while relatively scanning a reticle and a wafer to a projection optical system.

To achieve the above objects, as shown in FIGS. 1 and 2. an projection exposure apparatus of the present invention comprises at least a wafer stage 3 being movable and allowing photosensitive substrate W to be held on a main surface thereof, an illumination optical system 1 for emitting exposure light of a predetermined wavelength and transferring a predetermined pattern of a mask (reticle R) onto the substrate W, and a catadioptric reduction projection optical system 5 provided between a first surface P1 on which the mask R is disposed and a second surface P2 on which a surface of the substrate W is corresponded, for projecting an image of the pattern of the mask R onto the substrate W. The illumination optical system 1 includes an alignment optical system 110 for adjusting a relative positions between the mask R and the substrate W, and the mask R is disposed on a reticle stage 2 which is movable in parallel with respect to the main surface of the wafer stage 3. The catacioptric reduction projection optical system has a space permitting an aperture stop 6 to be set therein. The sensitive substrate W comprises a wafer 8 such as a silicon wafer or a glass plate, etc., and a photosensitive material 7 such as a photoresist and the like coating a surface of the wafer 8.

In particular, the catadioptric reduction projection optical system, as shown in FIGS. 3 and 4, includes at least a first imaging optical system having a focal length f₁ (refracting lens group

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Various embodiments of the catadioptric reduction projection optical system according to the present invention will be described with reference to the drawings. In the examples, the optical system is applied to the projection optical system in the projection exposure apparatus for projecting a reduced image of patterns of reticle onto a wafer coated by a photoresist, using a one-shot exposure method or a scanning exposure method. FIG. 1 shows a basic structure of the exposure apparatus using a one-shot exposure method. As shown in FIG. 1, an exposure apparatus comprises at least a movable wafer-stage 3 allowing a photosensitive substrate W to be held on a main surface 3a thereof, an illumination optical system 1 for emitting exposure light of a predetermined wavelength and transferring a predetermined pattern of a mask (reticle R) onto the substrate W, a light source 100 for supplying an exposure light to the illumination optical system 1, a catadioptric reduction projection optical system 5 provided between a first surface P1 (object plane) on which the mask R is disposed and a second surface P2 (image plane) to which a surface of the substrate W is corresponded, for projecting an image of the pattern of the mask R onto the substrate W. The illumination optical system 1 includes an alignment optical system 110 for adjusting a relative positions between the mask R and the wafer W, and the mask R is disposed on a reticle stage 2 which is movable in parallel with respect to the main surface of the waver stage 3. A reticle exchange system 200 conveys and changes a reticle (mask R) to be set on the reticle stage 2. The reticle exchange system 200 includes a stage driver for moving the reticle stage 2 in parallel with respect to the main surface 3a of the wafer stage 3. The catadioptric reduction projection optical system 5 has a space permitting an aperture stop 6 to be set therein. The sensitive substrate W comprises a wafer 8 such as a silicon wafer or a glass plate, etc., and a photosensitive material 7 such as a photoresist or the like coating a surface of the wafer 8. The wafer stage 3 is moved in parallel with respect to a object plane P1 by a stage control system 300. Further, since a main control section 400 such as a computer system controls the light source 100, the reticle exchange system 200, the stage control system 300 or the like, the exposure apparatus can perform a harmonious action as a whole.

FIG. 2 shows the basic structure of an exposure apparatus using a scanning exposure method. In FIG. 2, the exposure apparatus also comprises a wafer stage 3, a reticle stage 2, an illumination optical system 1, and a catadioptric reduction projection optical system 5. The illumination optical system 1 emits a light beam from the light source 100 to an illumination region on the reticle R, the illumination region being a predetermined shaped. The catadioptric reduction projection optical system 5 projects a reduced image of a pattern of the region on the reticle R to an exposure region on the wafer W (photosensitive substrate). The reticle stage control system 210 can move the reticle stage 2 with respect to the surface P2 of the wafer W and is included in the reticle exchange system 200. The main control section 400 such as a computer system controls the light source 100, the reticle exchange system 200. In particular, the main control section 400 separately controls the reticle stage control system 210 and the wafer stage control system 300 and, thereby can perform a scanning exposure method with changing a relative position between an illumination region on the reticle R and an exposure region on the wafer W.

The techniques relating to an exposure, apparatus of the present invention are described, for example, in U.S. patent applications Ser. No. 255,927, No. 260,398, No. 299,305, U.S. Pat. No. 4,497,015, No. 4,666,273, No. 5,194,893, No. 5,253,110, No. 5,333,035, No. 5,365,051. No. 5,379,091, or the like. The reference of U.S. patent application Ser. No. 255,927 teaches an illumination optical system (using a laser source) applied to a scan type exposure apparatus. The reference of U.S. patent application Ser. No. 260,398 teaches an illumination optical system (using a lamp source) applied to a scan type exposure apparatus. The reference of U.S. patent application Ser. No. 299,305 teaches an alignment optical system applied to a scan type exposure apparatus. The reference of U.S. Pat. No. 4,497,015 teaches an illumination optical system (using a lamp source) applied to a scan type exposure apparatus. The reference of U.S. Pat. No. 4,666,273 teaches a step-and repeat type exposure apparatus capable of using the catadioptric projection optical system of the present invention. The reference of U.S. Pat. No. 5,194,893 teaches an illumination optical system, an illumination region, mask-side and reticle-side interferometers, a focusing optical system, alignment optical system, or the like. The reference of U.S. Pat. No. 5,253,110 teaches an illumination optical system (using a laser source) applied to a step-and-repeat type exposure apparatus. The '110 reference can be applied to a scan type exposure apparatus. The reference of U.S. Pat. No. 5,333,035 teaches an application of an illumination optical system applied to an exposure apparatus. The reference of U. S. Pat. No. 5,365,051 teaches a auto-focusing system applied to an exposure apparatus. The reference of U.S. Pat. No. 5,379,091 teaches an illumination optical system (using a laser source) applied to a scan type exposure apparatus.

Next, as described above, the optical system is applied to projection exposure apparatuses of a one-shot exposure method and a scanning exposure method, which are designed to project an image of a pattern on a reticle onto a wafer coated with a photoresist at a predetermined magnification.

With regard to the lens arrangement in each of the following embodiments, for example, as shown in FIG. 11, flat virtual planes (e.g., a plane r₂₉) are respectively used as the reflecting surface (r₃₀) and mirror surface of a concave reflecting mirror M₁. In order to express the shapes of lenses and the distances therebetween, the pattern surface of a reticle R is assumed to be the 0th plane, and each of the planes through which light emerging from the reticle R passes until it reaches a wafer W is sequentially assumed to be the ith plane (i=1, 2, . . . ), whereas the positive sign of the radius of curvature, r_i, of the ith plane indicates a convex lens with respect to a light beam from the reticle R. In addition, the plane distance between the ith plane and the (i+1)th plane is represented by d_i. SiO₂ represents fused quartz as a glass material. The fused quartz has the following refractive index with respect to the used reference wavelength (193 nm):

refractive index of fused quartz: 1.5610

First Embodiment

The first embodiment is a projection optical system suitable for a projection optical apparatus (e.g., a stepper) of a one-shot exposure method and having a magnification of 1/4×.

FIGS. 3 and 4 show the overall arrangement of the first embodiment. Referring to FIGS. 3 and 4, a reticle R (see FIG. 11) on which a pattern to be transferred is drawn is placed on an object plane P1, and a wafer W (see FIG. 11) coated with a photoresist is placed on an image plane P2. The reticle R on the object plane P1 is illuminated with exposure illumination light from the light source 100 of the illumination optical system 1, and a light beam passing through the reticle R forms a first intermediate image 9 via a refracting lens group G₁ as a focusing lens group having a focal length f₁. A light beam from the first intermediate image 9 is incident on a polarizing beam splitter (PBS) 10. A p-polarized light beam transmitted through a polarizing/reflecting surface 10a of the polarizing beam splitter 10 passes through λ/4 plate 11 and is reflected by a catadioptric lens group G₂, having a focal length f₂ and including a concave reflecting mirror M₁. Thereafter, the light beam returns as an s-polarized light beam to the polarizing beam splitter 10 via the λ/4 plate 11 to form a second intermediate image 12 in the polarizing beam splitter 10. Note that the catadioptric lens group G₂(f₂) includes a refracting lens in practice, as shown in FIG. 11.

Most of the s-polarized light beam from the second intermediate image 12 is reflected by the polarizing/reflecting surface 10a to form a reduced image of the reticle pattern onto the wafer W on the image plane P1 via a refracting lens group G₃ as a focusing lens group having a Focal length f₃. In addition, an aperture stop 6a is arranged near the pupil plane of the refracting lens group G₁(f₁) along an optical axis AX₁ of the refracting lens group G₁(f₁), and an aperture stop 6b is arranged near the pupil plane of the refracting lens group G₃(f₃) along an optical axis AX₂ of the refracting lens group G₃(f₃).

In this embodiment, since the second intermediate image 12 is formed to be closer to the concave reflecting mirror M₁ than the polarizing/reflecting surface 10a, the polarizing beam splitter 10, in particular, can be reduced in size.

FIG. 11 shows the detailed lens arrangement in the first embodiment of FIG. 3 (FIG. 4). The λ/4 plate 11 in FIG. 3 is omitted from the arrangement shown in FIG. 11.

As shown in FIG. 11, the refracting lens group G₁(f₁) is constituted by in the following order from the reticle side: a negative meniscus lens L₁₁ having a convex surface facing the reticle R, a negative meniscus lens L₁₂ having a concave surface facing the reticle R, a bioconvex lens (to be simply referred to as a convex lens hereinafter) L₁₃, a convex lens L₁₄, a negative meniscus lens L₁₅ having a convex surface facing the reticle R, a negative meniscus lens L₁₆ having a concave surface facing the reticle R, a convex lens L₁₇, a convex lens L₁₈, a convex lens L₁₉, a bioconcave lens (to be simply referred to as a concave lens hereinafter) L_1A, a convex lens L_1B, and a convex lens L_1C. The catadioptric lens group G₂(f₂) is constituted by a negative meniscus lens L₂₀ having a concave surface facing the reticle R and the concave reflecting mirror M₁.

The refracting lens group G₃(f₃) is constituted by a convex lens L₃₁, a positive meniscus lens L₃₂ having a convex surface facing the reticle R (polarizing beam splitter 10), a negative meniscus lens L₃₃ having a convex surface facing the reticle R, a convex lens L₃₄, a convex lens L₃₅, a convex lens L₃₆, a negative meniscus lens L₃₇ having a concave surface facing the reticle R, a negative meniscus lens L₃₈ having a concave surface Facing the reticle R, a positive meniscus lens L₃₉ having a concave surface facing the reticle R, a negative meniscus lens L_3A having a concave surface facing the reticle R, a convex lens L_3B, a negative meniscus lens L_3C having a convex surface facing the reticle R, a positive meniscus lens L_3D having a convex surface facing the reticle R, and a negative meniscus lens L_3E having a convex surface facing the reticle R.

The aperture stop 6a is arranged at the Fourier transform plane in the refracting lens group G₁(f₁), i.e., between the convex lens L₁₇ and the convex lens L₁₈. The aperture stop 6b is arranged at the Fourier transform plane in the refracting lens group G₃(f₃), i.e., near the reticle-side surface of the negative meniscus lens L₃₇.

The reduction ratio of the overall system is 1/4×, the numerical aperture (NA) on the wafer side (image side) is 0.5, and the object height is 60 mm.

One type of optical glass consisting of fused quartz is used for all the refracting lenses. The system is corrected for axial chromatic aberration and for chromatic aberration of magnification with respect to a wavelength width of 1 nm in the wavelength (193 nm) of an ultraviolet excimer laser beam. In addition, spherical aberration, coma, astigmatism, and distortion are corrected to attain an almost aberration-free state, thereby realizing an optical system having excellent imaging performance.

The curvature radii r_i, plane distances d_i, and glass materials used in the first embodiment shown in FIG. 11 are shown in Table 1. In Table 1, the 29th and 34th planes are virtual planes indicating the polarizing/reflecting surfaces of the concave reflecting mirror M₁ and the polarizing beam splitter 10.

TABLE 1
			Glass				Glass
i	ri	di	Material	i	ri	di	Material
0	--	34.6		33	∞	41.2	SiO2
1	107.95	30.0	SiO2	34	∞	0.0
2	93.49	60.0		35	∞	0.0	SiO2
3	-63.39	30.0	SiO2	36	∞	7.1
4	-80.34	31.2		37	412.21	18.0	SiO2
5	1879.66	42.0	SiO2	38	-151.48	3.0
6	-234.73	7.2		39	90.81	24.0	SiO2
7	1112.81	30.0	SiO2	40	422.76	7.2
8	-209.18	6.0		41	1244.69	9.0	SiO2
9	655.92	13.5	SiO2	42	90.94	12.0
10	129.99	37.5		43	753.18	19.2	SiO2
11	-80.54	12.0	SiO2	44	-187.50	29.7
12	-161.37	9.0		45	318.30	18.0	SiO2
13	212.17	36.0	SiO2	46	-383.26	3.0
14	-235.30	186.0		47	167.48	18.0	SiO2
15	999.87	27.0	SiO2	48	-2492.32	27.3
16	-175.63	3.0		49	-113.03	16.8	SiO2
17	203.15	18.0	SiO2	50	-139.99	36.6
18	-3006.49	21.3		51	-125.26	24.6	SiO2
19	-94.09	18.0	SiO2	52	-135.38	1.5
20	282.07	30.6		53	-454.54	24.6	SiO2
21	7834.80	33.0	SiO2	54	-142.46	9.0
22	-111.27	3.0		55	-82.96	18.0	SiO2
23	103.80	30.0	SiO2	56	-107.78	1.5
24	-6760.25	78.5		57	394.38	30.0	SiO2
25	∞	82.5	SiO2	58	-157.74	1.5
26	∞	162.3		59	63.96	17.1	SiO2
27	-76.86	7.5	SiO2	60	47.02	3.0
28	-189.23	10.5		61	47.29	30.0	SiO2
29	∞	0.0		62	151.47	1.5
20	126.03	10.5		63	55.43	11.4	SiO2
31	189.23	7.5	SiO2	64	47.29	19.9
32	76.86	162.3

FIGS. 12 to 14 respectively show longitudinal aberration charts in the first embodiment; FIG. 12 shows a spherical aberration of this embodiment; FIG. 13 shows an astigmatism of this embodiment; and FIG. 14 shows a distortion of this embodiment. Further, FIG. 15 shows a magnification chromatic aberration chart in the first embodiment. FIGS. 16(a), 16(b) and 16(c) show transverse aberration charts in the first embodiment. In these aberration charts, reference symbols J, P, and Q respectively denote characteristic curves at the used reference wavelength (193 nm), 192.5 nm, and 193.5 nm.

The height of the projection optical system of this embodiment is mainly determined by the refracting lens group G₃(f₃). The height of the refracting lens group G₃(f₃) is about 600 mm at most. That is, the height of this system is about 1/2 that of a projection optical system constituted by a conventional refracting system.

In this embodiment, as shown in FIG. 3, of the light from the refracting lens group G₁(f₁), a light beam which is transmitted through the polarizing beam splitter 10 is guided to the catadioptric lens group G₂(f₂). As shown in FIG. 4, however, of the light from the refracting lens group G₂(f₂), a light beam which is reflected by the polarizing beam splitter 10 may be guided to the catadioptric lens group G₂(f₂) via the λ/4 plate 11. In this case, the light beam reflected by the concave reflecting mirror M₂ in the catadioptric lens group G₂(f₂) is converted into a p-polarized light beam by the λ/4 plate 11 to form the second intermediate image 12 in the polarizing beam splitter 10. After most of the light beam from the second intermediate image 12 is transmitted through the polarizing/reflecting surface 10a, the light forms a reticle pattern image on the wafer W via the refracting lens group G₃(f₃).

Second Embodiment

The second embodiment is a projection optical system suitable for a projection optical apparatus based on the scanning exposure scheme and having a magnification of 1/4×.

FIG. 5 shows the overall arrangement of the second embodiment. Referring to FIG. 5, a reticle R is placed on an object plane P1, and a wafer W is placed on an image plane P2. FIG. 6 is a plane view showing the reticle R when viewed in the direction of a refracting lens group G₁(f₁) in FIG. 5. In this case, a bar-shaped illumination region 22, on the reticle R, which is slightly offset from the optical axis of the projection optical system is illuminated with illumination light from the light source 100 of the illumination optical system 1.

Referring to FIG. 5, a light beam passing through the illumination region 22 forms a first intermediate image 9 via the refracting lens group G₁, and a light beam from the first intermediate image 9 passes through a side surface of a mirror (to be referred to as a partial mirror hereinafter) 13 set at an angle of almost 45°C with respect to an optical axis AX₁ to cover the lower half portion of the optical axis AX₁. The light beam is then reflected by a catadioptric lens group G₂(f₂) including a concave reflecting mirror M₁ to form a second intermediate image 12 in front of the partial mirror 13. Note that the catadioptric lens group G₂(f₂) includes a refracting lens in practice, as shown in FIG. 17.

A light beam from the second intermediate image 12 is reflected by the partial mirror 13 to form a reduced image of a reticle pattern on the wafer W on the image plane P2 via a refracting lens group G₃(f₃). In addition, an aperture stop 6a is arranged near the pupil plane of the refracting lens group G₁(f₁), and an aperture stop 6b is arranged near the pupil plane of the refracting lens group G₃(f₃).

FIG. 7 is a plan view of the wafer W in FIG. 5. As shown in FIG. 5, the reduced image of the reticle pattern is projected onto a bar-shaped exposure region 24, on the wafer W, which is slightly offset from an optical axis AX₂. Therefore, in order to exposure the pattern on the entire surface of the reticle R, the wafer W may be scanned to the right (or the left) at a velocity V_W (=β·V_R) in synchronism with the downward (upward) scanning of the reticle R at a velocity V_R in FIG. 5, provided that the magnification of the overall system is represented by β.

In this embodiment, since the second intermediate image 12 is formed at the concave reflecting mirror side of the partial mirror 13 and is located between the concave reflecting mirror M₁ and the partial mirror 13, the projection optical system can be reduced in size in the vertical direction in particular.

FIG. 17 shows the detailed lens arrangement in the second embodiment.

As shown in FIG. 17, the refracting lens group G₁(f₁) is constituted by in the following order from the reticle side: a positive meniscus lens L₁₁ having a convex surface facing the reticle R, a negative meniscus lens L₁₂ having a convex surface facing the reticle R, a negative meniscus lens L₁₃ having a concave surface facing the reticle R, a positive meniscus lens L₁₄ having a concave surface facing the reticle R, a convex lens L₁₅, a positive meniscus lens L₁₆ having a concave surface facing the reticle R, a negative meniscus lens L₁₇ having a convex surface facing the reticle R, a negative meniscus lens L₁₈ having a concave surface facing the reticle R, a convex lens L₁₉, a positive meniscus lens L_1A having a concave surface facing the reticle R, a positive meniscus lens L_1B having a concave surface facing the reticle R, a convex lens L_1C, a negative meniscus lens L_1D having a concave surface facing the reticle R, a positive meniscus lens L_1E having a concave surface facing the reticle R, and a positive meniscus lens L_1F having a convex surface facing the reticle R. The catadioptric lens group G₂(f₂) is constituted by a negative meniscus lens L₂₀ having a concave surface facing the reticle R and the concave reflecting mirror M₁.

A refracting lens group G₂(f₃) is constituted by a convex lens L₃₁, a convex lens L₃₂, a negative meniscus lens L₃₃ having a convex surface facing the reticle R (partial mirror 12), a positive meniscus lens L₃₄ having a concave surface facing the reticle R, a convex lens L₃₅, a positive meniscus lens L₃₆ having a convex surface facing the reticle R, a negative meniscus lens L₃₇ having a concave surface facing the reticle R, a positive meniscus lens L₃₈ having a concave surface facing the reticle R, a negative meniscus lens L₃₉ having a concave surface facing the reticle R, a convex lens L_3A, a negative meniscus lens L_3B having a convex surface facing the reticle R, a positive meniscus lens L_3C having a convex surface facing the reticle R, and a negative meniscus lens L_3D having a convex surface facing the reticle R. The aperture stop 6a is arranged near the Fourier transform plane in the refracting lens group G₁(f₁), i.e., at a plane near the positive meniscus lens L_1B on the reticle R. The aperture stop 6b is arranged near the Fourier transform plane in the refracting lens group G₃(f₃), i.e., a plane near the positive meniscus lens L₃₈ on the reticle R.

The reduction ratio of the overall system is 1/4×, the numerical aperture (NA) on the wafer W side (image side) is 0.45, and the object height is 60 mm.

One type of optical glass consisting of fused quartz is used for all the refracting lenses. The system is corrected for axial chromatic aberration and for chromatic aberration of magnification with respect to a wavelength width of 1 nm in the wavelength (193 nm) of an ultraviolet excimer laser beam. In addition, spherical aberration, coma, astigmatism, and distortion are corrected to attain an almost aberration-free state, thereby realizing an optical system having excellent imaging performance.

The curvature radii r_i, plane distances d_i, and glass materials used in the second embodiment shown in FIG. 17 are shown in Table 2. In Table 2, the 34th plane is a virtual plane indicating the reflecting surfaces of the concave reflecting mirror M₁.

TABLE 2
			Glass				Glass
i	ri	di	Material	i	ri	di	Material
0	--	33.7		33	-200.63	5.1
1	115.59	24.0	SiO2	34	∞	0.0
2	206.01	3.0		35	124.83	5.1
3	82.23	15.0	SiO2	36	200.63	8.5	SiO2
4	64.61	51.0		37	78.74	195.8
5	-65.23	6.0	SiO2	38	∞	30.0
6	-487.74	6.0		39	4302.84	18.0	SiO2
7	-187.92	36.0	SiO2	40	-160.56	3.0
8	-85.94	24.0		41	111.38	18.0	SiO2
9	256.51	42.0	SiO2	42	-1676.43	3.0
10	-210.33	7.0		43	977.92	21.0	SiO2
11	-296.05	30.0	SiO2	44	102.28	12.0
12	-182.85	6.0		45	-988.64	28.2	SiO2
13	176.46	13.4	SiO2	46	-117.27	30.4
14	87.59	36.0		47	251.58	18.0	SiO2
15	-72.74	18.0	SiO2	48	-351.71	3.0
16	-182.58	3.0		49	186.32	18.0	SiO2
17	292.35	36.1	SiO2	50	731.15	27.0
18	-177.49	17.6		51	-205.32	16.8	SiO2
19	-204.01	30.0	SiO2	52	-482.46	60.5
20	-157.05	87.0		53	-481.92	24.7	SiO2
21	-277.13	27.0	SiO2	54	-142.39	9.0
22	-163.85	64.8		55	-92.11	20.2	SiO2
23	318.99	24.0	SiO2	56	-133.33	1.5
24	-723.51	26.8		57	207.89	24.0	SiO2
25	-115.97	18.0	SiO2	58	-204.01	1.5
26	-335.19	12.0		59	60.36	17.1	SiO2
27	-827.23	33.0	SiO2	60	49.08	9.0
28	-159.61	3.0		61	55.94	27.0	SiO2
29	93.92	24.0	SiO2	62	420.19	1.5
30	1239.44	105.0		63	39.71	11.2	SiO2
31	∞	195.8		64	36.46	21.0
32	-78.74	8.5	SiO2

FIGS. 18 to 20 respectively are longitudinal aberration charts in the second embodiment; FIG. 18 shows a spherical aberration of this embodiment; FIG. 19 shows an astigmatism of this embodiment; and FIG. 20 shows a distortion. Further, FIG. 21 shows a magnification chromatic aberration chart in the second embodiment. FIGS. 22(a), 22(b) and 22(c) show transverse aberration charts in the second embodiment.

Although the second embodiment exemplifies the scanning exposure apparatus, the present invention can be applied to a projection exposure apparatus of a one-shot exposure method.

Third Embodiment

The third embodiment is a projection optical system suitable for a projection exposure apparatus of a scanning exposure method and having a magnification of 1/4×. A partial mirror is used in the third embodiment like in the second embodiment. However, an off-axis light ray further offset from the optical axis than in the second embodiment is used in the third embodiment.

FIG. 8 shows the overall arrangement of the second embodiment. Referring to FIG. 8 which indicates similar or same parts with the same reference numerals as in FIG. 5, a reticle 21 is placed on an object plane P1, and a wafer W is placed on an image plane P2. FIG. 9 is a plane view showing the reticle R when viewed in the direction of a refracting lens group G₁(f₁). As shown in FIG. 9, an arcuated illumination region 22A, on the reticle R, which is slightly offset from the optical axis of the projection optical system is illuminated.

Referring to FIG. 8, a light beam passing through the illumination region 22A forms a reduced image of a reticle pattern on an exposure region 24A (see FIG. 10) on the wafer W through the refracting lens group G₁(f₁), a catadioptric lens group G₂(f₂) including a concave reflecting mirror M₁, a partial mirror 13, and a refracting lens group G₃(f₃). In this case, in order to expose the pattern on the entire surface of the reticle R onto the wafer W, the wafer W may be scanned to the right (or the left) in synchronism with the downward (or upward) scanning of the reticle R in FIG. 9.

In this embodiment, a second intermediate image 12 is formed at the reflecting lens group side of the partial mirror 13 and is located between the refracting lens group G₃(f₃) and the mirror 13.

FIG. 23 shows the detailed lens arrangement in the third embodiment.

As shown in FIG. 23, the refracting lens group G₁(f₁) is constituted by in the following order from the reticle side: a positive meniscus lens L₁₁ having a convex surface facing the reticle R, a negative meniscus lens L₁₂ having a convex surface facing the reticle R, a negative meniscus lens L₁₃ having a concave surface facing the reticle R, a positive meniscus lens L₁₄ having a concave surface facing the reticle R, a convex lens L₁₅, a negative meniscus lens L₁₆ having a concave surface facing the reticle R, a negative meniscus lens L₁₇ having a convex surface facing the reticle R, a negative meniscus lens L₁₈ having a concave surface facing the reticle R, a convex lens L₁₉, a positive meniscus lens L₁₄ having a concave surface facing the reticle R, a positive meniscus lens L_1B having a concave surface facing the reticle R, a convex lens L_1C, a negative meniscus lens L_1D having a concave surface facing the reticle R, a negative meniscus lens L_1E having a concave surface facing the reticle R, and a positive meniscus lens L_1F having a convex surface facing the reticle R. The catadioptric lens group G₂(f₂) is constituted by a negative meniscus lens L₂₀ having a concave surface facing the reticle R and the concave reflecting mirror M₁.

A refracting lens group G₃(f₃) is constituted by a positive meniscus lens L₃₁ having a concave surface facing the reticle side (partial mirror 13), a convex lens L₃₂, a concave lens L₃₃, a positive meniscus lens L₃₄ having a concave surface facing the reticle R, a convex lens L₃₅, a positive meniscus lens L₃₆ having a convex surface facing the reticle R, a negative meniscus lens L₃₇ having a concave surface Lacing the reticle R, a positive meniscus lens L₃₈ having a concave surface facing the reticle R, a negative meniscus lens L₃₉ having a concave surface facing the reticle R, a positive meniscus lens L_3A having a convex surface facing the reticle R, a convex lens L_3B, a positive meniscus lens L_3C having a convex surface Lacing the reticle R, and a negative meniscus lens L_3D having a convex surface facing the reticle R. An aperture stop 6a is arranged near the Fourier transform plane in the refracting lens group G₁(f₁), i.e., between the positive meniscus lens L_1B and the convex lens L_1C. A portion near the Fourier transform plane in the refracting lens group G₃(f₃), i.e., the lens frame of the negative meniscus lens L₃₇, serves as an aperture stop.

The reduction ratio of the overall system is 1/4×, the numerical aperture (NA) on the wafer side (image side) is 0.5, and the object height is 60 mm. The width of the bar-shaped exposure region 24A on the wafer W, shown in FIG. 10, in the scanning direction is 4 mm.

One type of optical glass consisting of fused quartz is used for all the refracting lenses. The system is corrected for axial chromatic aberration and for chromatic aberration for magnification with respect to a wavelength width of 1 nm in the wavelength (193 nm) of an ultraviolet excimer laser beam. In addition, spherical aberration, coma, astigmatism, and distortion are corrected to attain an almost aberration-free state, thereby realizing an optical system having excellent imaging performance.

The curvature radii r_i, plane distances d_i, and glass materials used in the third embodiment shown in FIG. 23 are shown in Table 3. In Table 3, the 34th plane is a virtual plane indicating the reflecting surfaces of the concave reflecting mirror M₁.

TABLE 3
			Glass				Glass
i	ri	di	Material	i	ri	di	Material
0	--	33.7		33	-198.40	11.1
1	115.52	24.0	SiO2	34	∞	0.0
2	201.62	3.0		35	125.71	11.1
3	102.72	21.0	SiO2	36	198.40	8.5	SiO2
4	79.03	54.0		37	76.19	161.4
5	-69.98	9.0	SiO2	38	∞	55.0
6	-831.37	9.0		39	-2718.54	18.0	SiO2
7	-158.10	36.0	SiO2	40	-114.25	3.0
8	-87.19	24.0		41	201.91	24.0	SiO2
9	189.29	48.0	SiO2	42	-214.05	3.0
10	-178.69	7.0		43	-1582.73	15.0	SiO2
11	-153.53	24.0	SiO2	44	309.83	12.0
12	-169.00	6.0		45	-337.52	28.2	SiO2
13	131.04	13.4	SiO2	46	-156.44	30.4
14	78.51	45.0		47	225.73	18.0	SiO2
15	-69.71	18.0	SiO2	48	-1363.11	3.0
16	-117.02	3.0		49	150.18	18.0	SiO2
17	303.29	36.1	SiO2	50	426.42	27.0
18	-172.25	17.6		51	-167.12	16.8	SiO2
19	-174.43	30.0	SiO2	52	-719.40	48.0
20	-156.46	18.0		53	-299.90	24.7	SiO2
21	-206.73	27.0	SiO2	54	-158.30	15.0
22	-177.68	64.8		55	-88.33	20.2	SiO2
23	275.50	36.0	SiO2	56	-88.98	1.5
24	-127.44	26.8		57	492.66	24.0	SiO2
25	-84.26	18.0	SiO2	58	1972.64	1.5
26	-181.12	12.0		59	136.67	30.0	SiO2
27	-58.86	24.0	SiO2	60	-999.05	1.5
28	-66.54	12.2		61	66.31	54.0	SiO2
29	69.08	33.0	SiO2	62	166.17	4.5
30	668.69	97.5		63	321.60	11.2	SiO2
31	∞	161.4		64	168.79	18.4
32	-76.19	8.5	SiO2

FIGS. 24 and 25 respectively show longitudinal aberration charts in the third embodiment; FIG. 24 shows an astigmatism of this embodiment; and FIG. 25 shows a distortion of this embodiment. Further, FIG. 26 shows a magnification chromatic aberration chart in the second embodiment. FIGS. 27(a), 27(b) and 27(d) show traverse aberration charts in the third embodiment.

According to the present invention, relations (1) to (6) above are preferably satisfied. The relationship between each of the above embodiments and the relations will be described below. Tables 4 to 6 respectively show the curvature radii r of the concave reflecting mirror M₁, focal lengths f_i of lens groups G_i (i=1 to 3), Petzval sums p_i, imaging magnifications β_i, magnifications β_ij of the synthetic systems of the refracting lens groups G₁ and the catadioptric lens group G₂, and magnifications β₃ of the refracting lens groups G₃. Note that each total system is represented by G_T, and a Petzval sum p_i and imaging magnification β of the total system G_T are written in the columns of "Petzval Sum p_i" and "Imaging Magnification β" corresponding to the total system G_T.

TABLE 4
Specifications of first embodiment
	r	fi	pi	ni	βi	βij
G1	--	1411.25	0.00690	0.10269	-0.47409	0.36471
G2	-126.038	106.851	-0.02142	-0.43692	-0.76928
G3	--	-130.078	0.01462	-0.52583	-0.68386	-0.68386
GT	--	--	0.00010	--	-0.24941	-0.24941

TABLE 5
Specifications of second embodiment
	r	fi	pi	ni	βi	βij
G1	--	1421.107	0.00611	0.115168	-0.46807	0.37808
G2	-124.838	110.143	-0.02157	-0.420914	-0.807742
G3	--	-103.285	0.01565	-0.618653	-0.66108	-0.66108
GT	--	--	0.00020	--	-0.24994	-0.24994

TABLE 6
Specifications of third embodiment
	r	fi	pi	ni	βi	βij
G1	--	1115.522	0.00680	0.131830	-0.43865	0.34218
G2	-125.712	108.028	-0.02172	-0.426192	-0.780075
G3	--	-107.560	0.01490	-0.623969	-0.731048	-0.731048
GT	--	--	0.00003	--	-0.25015	-0.25015

Further, based on Table 5 to Table 8, values are calculated for (p₁+p₃), p₂, |p₁+p₂+p₃|, |β₁₂|, |β₃|, and |β| in each embodiment, and the following Table 9 shows the calculated values.

TABLE 7
Table of correspondence conditions
Conditions/Embodiment	1	2	3
(1) p1 + p3 > 0	0.02152	0.02176	0.02170
(2) p2 < 0	-0.02142	-0.02157	-0.02172
(3) |p1 + p2 + p3 | < 0.1	0.00010	0.00020	0.00003
(4) 0.1 ≦ | β1 | ≦ 1	0.47409	0.46807	0.43865
(5) 0.5 ≦ | β2 | ≦ 2	0.76928	0.80774	0.780075
(6) 0.25 ≦ | β3 | ≦ 1.5	0.68386	0.66108	0.731048

As is apparent from the above tables, relations (1) to (6) given above are satisfied in each of the above embodiments.

In each embodiment described above, as the half mirror, a compact mirror covering a half portion of the optical axis is used. However, as the half mirror, a partial reflecting mirror constituted by a large glass plate and having a reflecting film formed on only one surface side of the optical axis may be used. Alternatively, as the half mirror, a prism type beam splitter having a reflecting film formed on only, e.g., the lower half portion of the joined surface serving as a reflecting surface may be used.

In each embodiment described above, quartz is used as a glass material for a refracting optical system. However, optical glass such as fluorite may be used.

Next, an embodiment of a common exposure apparatus using the catadioptric reduction projection optical system 5 of the present invention. In this embodiment, as shown in FIG. 28, the first refracting lens group G₁(f₁) includes a reflector 14 changing a traveling direction of light that travels in the first refracting lens group G₁(f₁). Therefore, the optical axis AX1 of the first refracting lens group G₁ is constituted by optical axes AX1a and AX1b as shown in FIG. 28. The techniques relating to an exposure apparatus using a catadioptric projection optical system is described, for example, in Japanese Laid-Open Patent Application No. 5-72478, or the like.

As described above, the present invention is not limited to the above embodiments. Various changes and modifications of the embodiments can be made without departing from the spirit and scope of the present invention.

According to the present invention, the primary imaging operation is performed between the first surface (object surface) and the concave reflecting mirror, and the secondary imaging operation is performed between the concave reflecting mirror and the second surface (image plane). For this reason, the beam splitting means for splitting a light beam incident on the concave reflecting mirror from a light beam reflected thereby can be reduced in size. In addition, since an image formed by the secondary imaging operation is relayed to the second surface via the third imaging optical system, the optical path from the concave reflecting mirror and the image plane can be set to be sufficiently long, and the working distance can be increased. Furthermore, since the imaging magnification of the first imaging optical system can be arbitrarily changed within a predetermined range, excellent optical performance can be realized.

An aperture stop can be arranged in the first or third imaging optical system (or both). For this reason, the coherent factor (σ value) can be arbitrarily controlled.

In the conventional catadioptric optical system, since the optical axis is decentered, an adjusting operation is difficult to perform. It is, therefore, difficult to realize designed imaging performance. However, in the catadioptric reduction projection optical system of the present invention, since the optical path can be deflected near the first or second intermediate image, the adverse effect of any decentering error on the imaging characteristics is small. In addition, for example, when the optical path is to be deflected near the second intermediate image, the first and second imaging optical system are integrated into one system, and this system and the third imaging optical system can be independently adjusted. After this adjustment, the two optical systems are arranged such that their optical axes are almost perpendicular to each other. Therefore, decentering adjustment and the like can be easily performed.

When a prism type beam splitter is to be used as a beam splitting means, since a compact prism type beam splitter can be used, a deterioration in imaging characteristics due to nonuniform characteristics at the half-transmitting surface of the beam splitter can be reduced. In addition, the blanket wafer exposure scheme can be used with a large numerical aperture unlike a ring field optical system for projecting only an annular zone by using an off-axis beam.

From the invention thus described, it will be obvious that the invention may be varied in many ways. Such variations are not to be regarded as a departure from the spirit and scope of the invention, and all such modifications as would be obvious to one skilled in the art are intended to be included within the scope of the following claims.

The basic Japanese Application No. 198350/1994 filed on Aug. 23, 1994 is hereby incorporated by reference.

Claims

1. A catadioptric reduction projection optical system for projecting a reduced image of a pattern of a first surface onto a second surface, comprising:

a first imaging optical system having a positive refractive power and for forming a first intermediate image as a reduced image of the pattern on the first surface;

beam splitting means for splitting at least part of a light beam from said first imaging optical system;

a second imaging optical system including a concave reflecting mirror for reflecting a light beam split by said beam splitting means, said second imaging optical system having a positive refractive power and for forming a second intermediate image as an image of the first intermediate image; and

a third imaging optical system for forming a third intermediate image as an image of the second intermediate image on the second surface on the basis of a light beam, of a light beam from said second imaging optical system, which is split by said beam splitting means.

2. A system according to claim 1, wherein said beam splitting means is a prism type beam splitter, and at least one of the first intermediate image and the second intermediate image is formed in said prism type beam splitter.

3. A system according to claim 2, wherein an optical axis of said first imaging optical system corresponds to an optical axis of said second imaging optical system, and said beam splitting means is disposed between said first imaging optical system and said second imaging optical system.

4. A system according to claim 2, wherein an optical axis of said second imaging optical system corresponds to an optical axis of said third imaging optical system, and said beam splitting means is disposed between said second imaging optical system and said third imaging optical system.

5. A system according to claim 1, wherein said beam splitting means is a partial reflecting mirror for partially reflecting a light beam, and the second intermediate image is formed between said beam splitting means and said concave reflecting mirror of said second imaging optical system.

6. A system according to claim 5, wherein said partial reflecting mirror is disposed so as to avoid optical axes of said first and third imaging optical systems.

7. A system according to claim 1, wherein the following conditions are satisfied:

p₁+p₃>0, p₂<0,

and

|p₁+p₂+p₃|<0.1

where p₁ is the Petzval sum of said first imaging optical system, p₂ is the Petzval sum of said second imaging optical system, and p₃ is the Petzval sum of said third imaging optical system, and the following conditions are satisfied:

0.1≦|β₁|≦1,

0.5≦|β₂|≦2,

0.25≦|β₃|≦1.5, and

|β₁·β₂·β₃|<1

where β₁ is the magnification between the pattern of the first surface and the first intermediate image, β₂ is the magnification between the first intermediate image and the second intermediate image, and β₃ is the magnification between the second intermediate image and the third intermediate image.

8. An exposure apparatus comprising:

a first stage allowing a photosensitive substrate to be held on a main surface thereof;

a second stage for supporting a mask on which a predetermined pattern is formed;

an illumination optical system for emitting exposure light of a predetermined wavelength and transferring the pattern of the mask onto the substrate; and

a catadioptric reduction projection optical system provided between said first stage and said second stage, for projecting a reduced image of the pattern of the mask onto the substrate, said catadioptric reduction projection optical system including:

a first imaging optical system having a positive refractive power and for forming a first intermediate image as a reduced image of the pattern on the mask;

beam splitting means for splitting at least part of a light beam from said first imaging optical system;

a second imaging optical system including a concave reflecting mirror for reflecting a light beam split by said beam splitting means, and for forming a second intermediate image as an image of the first intermediate image; and

a third imaging optical system for forming a third intermediate image as an image of the second intermediate image on the substrate on the basis of a light beam, of a light beam from said second imaging optical system, which is split by said beam splitting means.

9. An apparatus according to claim 8, wherein said beam splitting means is a prism type beam splitter, and at least one of the first intermediate image and the second intermediate image is formed in said prism type beam splitter.

10. An apparatus according to claim 9, wherein an optical axis of said first imaging optical system corresponds to an optical axis of said second imaging optical system, and said beam splitting means is disposed between said first imaging optical system and said second imaging optical system.

11. An apparatus according to claim 9, wherein an optical axis of said second imaging optical system corresponds to an optical axis of said third imaging optical system, and said beam splitting means is disposed between said second imaging optical system and said third imaging optical system.

12. An apparatus according to claim 8, wherein said beam splitting means is a partial reflecting mirror for partially reflecting a light beam, and the second intermediate image is formed between said beam splitting means and said concave reflecting mirror of said second imaging optical system.

13. An apparatus according to claim 12, wherein said partial reflecting mirror is disposed so as to avoid optical axes of said first and third imaging optical systems.

14. An apparatus according to claim 8, wherein the following conditions are satisfied:

p₁+p₃>0, p₂<0,

and

|p₁+p₂+p₃|<0.1

where p₁ is the Petzval sum of said first imaging optical system, p₂ is the Petzval sum of said second imaging optical system, and p₃ is the Petzval sum of said third imaging optical system, and the following conditions are satisfied:

0.1≦|β₁|≦1,

0.5≦|β₂|≦2,

0.25≦|β₃|≦1.5, and

|β₁·β₂·β₃|<1

where β₁ is the magnification between the pattern of the first surface and the first intermediate image, β₂ is the magnification between the first intermediate image and the second intermediate image, and β₃ is the magnification between the second intermediate image and the third intermediate image.

15. A catadioptric imaging optical system in a projection exposure apparatus in which a pattern on a reticle placed on a first surface is transmitted onto a substrate placed on a second surface, comprising:

a first dioptric imaging optical sub-system;

a catadioptric imaging optical sub-system in an optical path between said first dioptric imaging optical sub-system and the second surface, comprising a concave mirror and a catadioptric optical axis; and

a second dioptric imaging optical sub-system in an optical path between said catadioptric imaging optical sub-system and the second surface, comprising a second dioptric optical axis,

wherein

a primary image is formed between said first dioptric imaging optical sub-system and said catadioptric imaging optical sub-system,

a secondary image is formed between said catadioptric imaging optical sub-system and said second dioptric imaging optical sub-system, and

the catadioptric optical axis intersects the second dioptric optical axis.

16. The optical system according to claim 15, wherein said catadioptric imaging optical sub-system further comprises a negative power lens.

17. The optical system according to claim 15, further comprising a turning mirror located off the second dioptric optical axis.

18. The optical system according to claim 17, wherein the secondary image is formed between said turning mirror and the concave mirror.

19. The optical system according to claim 15, further comprising an aperture stop in said first and/or second dioptric optical sub-system, which controls a coherent factor.

20. The optical system according to claim 15, wherein the second dioptric optical axis is along a straight line.

21. The optical system according to claim 20, wherein said first dioptric imaging optical sub-system comprises a first dioptric optical axis along a straight line.

22. A projection exposure apparatus which transfers a pattern on a reticle onto a substrate, comprising:

a catadioptric imaging optical system according to claim 15, wherein said catadioptric imaging optical system forms an exposure area at a position off the second dioptric optical axis.

23. The projection exposure apparatus according to claim 22, wherein the reticle and the substrate are scanned at different speeds corresponding to a magnification of said catadioptric imaging optical system.

24. A method of imaging a pattern on a reticle onto a substrate, comprising:

passing a light from the reticle through a first dioptric imaging optical sub-system;

passing a light from the first dioptric imaging optical sub-system through a catadioptric imaging optical subsystem having a concave mirror;

passing a light from the catadioptric optical sub-system through a second dioptric imaging optical sub-system;

forming a primary image between the first dioptric imaging optical sub-system and the catadioptric imaging optical system;

forming a secondary image between the catadioptric imaging optical system and the second dioptric imaging optical sub-system; and

turning an optical path near the primary image.

25. A method of imaging a pattern on a reticle onto a substrate, comprising:

passing a light from the reticle through a first dioptric imaging optical sub-system;

passing a light from the first dioptric imaging optical sub-system through a catadioptric imaging optical subsystem having a concave mirror;

passing a light from the catadioptric optical sub-system through a second dioptric imaging optical sub-system;

forming a primary image between the first dioptric imaging optical sub-system and the catadioptric imaging optical system;

forming a secondary image between the catadioptric imaging optical system and the second dioptric imaging optical sub-system; and

turning an optical path near the secondary image.

26. The method according to claim 25, wherein the optical path is turned by a turning mirror located off an optical axis of the second dioptric imaging optical sub-system.

27. The method according to claim 25, further comprising controlling a coherent factor using an aperture stop in the first and/or second dioptric imaging optical sub-system.

28. The method according to claim 27, further comprising arranging the reticle and the substrate to be parallel.

29. The method according to claim 28, further comprising turning an optical path in the first dioptric imaging optical sub-system.

30. A catadioptric imaging optical system in a projection exposure apparatus in which a pattern on a reticle placed on a first surface is transferred onto a substrate placed on a second surface, comprising:

a first dioptric imaging optical sub-system;

a catadioptric imaging optical sub-system in an optical path between said first dioptric imaging optical sub-system and the second surface, comprising a concave mirror;

a second dioptric imaging optical sub-system in an optical path between said catadioptric imaging optical sub-system and the second surface; and

a turning mirror between said catadioptric imaging optical system and said second dioptric imaging optical sub-system,

wherein

a primary image is formed between said first dioptric imaging optical sub-system and said catadioptric imaging sub-system, and

a secondary image is formed between said catadioptric imaging optical sub-system and said second dioptric imaging optical sub-system.

31. The optical system according to claim 30, wherein the secondary image is formed between said turning mirror and the concave mirror.

32. The optical system according to claim 30, further comprising an aperture stop in said first and/or second dioptric optical sub-system, which controls a coherent factor.

33. The optical system according to claim 30, wherein said second dioptric imaging optical sub-system has an optical axis along a straight line.

34. The optical system according to claim 33, wherein said first dioptric imaging optical sub-system has an optical axis along a straight line.

35. A projection exposure apparatus which transfers a pattern on a reticle onto a substrate, comprising:

a catadioptric imaging optical system according to claim 30, wherein said catadioptric imaging optical system forms an exposure area off an optical axis of said second dioptric imaging optical sub-system.

36. The projection exposure apparatus according to claim 35, wherein the reticle and the substrate are scanned at different speeds corresponding to a magnification of said catadioptric imaging optical system.

37. A method of imaging a pattern on a reticle onto a substrate, comprising:

forming a primary image of the reticle by a first dioptric imaging optical sub-system, based on light from the reticle;

forming a secondary image of the reticle using a catadioptric imaging optical sub-system having a concave mirror, based on light from the first dioptric imaging optical sub-system;

forming a final image of the reticle on the substrate using a second dioptric imaging optical sub-system, based on light from the catadioptric imaging optical system; and

turning an optical path between the catadioptric imaging optical system and the second dioptric imaging optical sub-system.

38. A catadioptric imaging optical system in a projection exposure apparatus in which a pattern on a reticle placed on a first surface is transferred onto a substrate placed on a second surface, comprising:

a first dioptric imaging optical sub-system comprising an optical axis along a straight line;

a catadioptric imaging optical sub-system in an optical path between said first dioptric imaging optical sub-system and the second surface, comprising a concave mirror and an optical axis along a straight line; and

a second dioptric imaging optical sub-system in an optical path between said catadioptric imaging optical sub-system and the second surface, comprising an optical axis along a straight line.

39. The optical system according to claim 15, wherein said first dioptric imaging optical sub-system, said catadioptric imaging optical sub-system, and said second dioptric imaging optical sub-system further comprise lenses having the same material.

40. The optical system according to claim 15, wherein the optical system satisfies the following conditions:

0.1≦|β₁|≦1,

0.5≦|β₂|≦2,

0.25≦|β₃|≦1.5, and

|β₁·β₂·β₃|<1

e####

where β₁ is the magnification for said first dioptric imaging optical sub-system, β₂ is a magnification for said catadioptric imaging optical sub-system, and β₃ is a magnification for said second dioptric imaging sub-system.