A projection exposure apparatus includes illuminating optical means for illuminating a projection negative, and projection optical means for projection-exposing the projection negative illuminated by the illuminating optical means onto a substrate, the illuminating optical means including light source means for supplying exposure light, annular light source forming means for forming an annular secondary light source by the light from the light source means, and condenser means for condensing the light beam from the annular light source forming means on the projection negative, and is designed to satisfy the following condition:
⅓≦d1/d2≦⅔,
where d1 is the inner diameter of the annular secondary light source, and d2 is the outer diameter of the annular secondary light source.
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0. 47. A projection exposure apparatus comprising:
an illumination optical system disposed in an optical path between a light source and a mask so as to illuminate the mask;
a projection optical system disposed in an optical path between the mask and a substrate so as to project an image of the mask onto the substrate; and
an optical system disposed within the illumination optical system so as to form one of a circular secondary light source and an annular secondary light source selectively based on light from the light source, the optical system changing a size of the circular secondary light source and changing an annular ratio of the annular secondary light source.
0. 62. A projection exposure apparatus comprising:
an illumination optical system that illuminates a mask and comprising a light source including an excimer laser, and an optical system disposed in an optical path formed by the light source so as to form an annular secondary light source having a light intensity distribution with a substantially annular shape on a pupil of the illumination optical system and an deflection member disposed in an optical path between said light source and said optical system; and
a projection optical system disposed in an optical path between the mask and a substrate so as to project an image of the mask onto the substrate;
wherein said optical system changes an annular ratio with respect to the light intensity distribution.
0. 39. A projection exposure apparatus comprising:
an illumination optical system disposed in an optical path of light emitted by a light source so as to illuminate a mask, the illumination optical system including an optical system disposed in an optical path between the light source and the mask so as to form an annular illumination source, said optical system changing an annular ratio of the annular illumination source in accordance with a pattern formed on the mask; and
a projection optical system disposed in an optical path between the mask and a substrate so as to project an image of the mask onto the substrate, said projection optical system including a pupil defining unit disposed within the projection optical system so as to define a pupil of the projection optical system;
wherein the pupil defining unit comprises a variable aperture stop.
0. 26. A projection exposure apparatus comprising:
an illumination optical system in which an optical system is disposed on an optical path to form an annular secondary light source with light emitted by a first light source, said optical system changing an annular ratio of an inner diameter to an outer diameter with respect to the annular secondary light source; and
a projection optical system disposed in an optical path between the mask and a substrate so as to project an image of the mask onto the substrate;
said illumination optical system satisfying the following condition:
1/3≦d1/d2≦ 2/3 wherein d1 is the inner diameter of the annular secondary light source and d2 is the outer diameter of the annular secondary light source.
0. 53. A projection exposure apparatus comprising:
an illumination optical system in which an internal reflection type integrator is disposed on an optical axis to illuminate a mask with light from a light source passing through the internal reflection type integrator; and
a projection optical system, disposed in an optical path between the mask and a substrate, through which light from the mask passes, the projection optical system including a pupil defining unit disposed within the projection optical system so as to define a pupil of the projection optical system;
said illumination optical system including an optical device disposed on the optical axis to form a light intensity distribution having a substantially annular shape on a pupil plane of the illumination optical system, the optical device being capable of changing at least one of the annular ratio, the outer diameter, and the inner diameter of the light intensity distribution in accordance with a pattern on the mask.
0. 33. A projection exposure apparatus comprising:
an illumination optical system disposed on an optical path of light emitted by a light source so as to illuminate a mask, the illumination optical system including an optical system disposed in an optical path between the light source and the mask so as to form a variable annular illumination source, said optical system changing an annular ratio of the variable annular illumination source; and
a projection optical system disposed in an optical path between the mask and a substrate so as to project an image of the mask onto the substrate;
said projection exposure apparatus satisfying the following condition:
0.45≦NA2/NA1≦0.8 wherein NA1 is the numerical aperture of said projection optical system, and NA2 is the numerical aperture of said illumination optical system determined by the outer diameter of said variable annular illumination source.
0. 75. A projection exposure apparatus comprising:
an illumination optical system disposed in an optical path of light emitted by a light source so as to illuminate a mask, said illumination optical system including an optical system disposed in an optical path between the light source and the mask so as to form a variable annular illumination source, said optical system changing an annular ratio with respect to the annular illumination source; and
a projection optical system disposed in an optical path between the mask and a substrate so as to project an image of the mask onto the substrate, said projection optical system including a pupil defining unit disposed within said projection optical system so as to define a pupil of said projection optical system;
said projection exposure apparatus satisfying the following condition:
0.45≦NA2/NA1 wherein NA1 is a numerical aperture of said projection optical system, and NA2 is a numerical aperture of said illumination optical system determined by the outer diameter of said variable annular illumination source.
21. A projection exposure apparatus comprising: an illuminating optical system; and
a projection optical system;
said illumination optical system including a light source, an optical integrator and a condenser optical system;
light from said light source passing through said optical integrator, said condenser optical system, a projection negative and said projection optical system, and onto a substrate;
said optical integrator forming a plurality of annular light source images; and
the following conditions being satisfied:
⅓≦d1/d2≦⅔ 0.45≦NA2/NA1≦0.8 where d1 is an inner diameter of said plurality of annular light source images, d2 is an outer diameter of said plurality of annular light source images, NA1 is the numerical aperture of said projection optical system at a side of said projection negative and NA2 is the numerical aperture of said condenser optical system at an exit side determined by the outer diameter of said plurality of annular light source images.
22. A projection exposure apparatus including:
an illumination optical system; and
a projection optical system;
said illumination optical system including a light source, an optical integrator, an annular stop and a condenser optical system;
light from said light source passing through said optical integrator, said condenser optical system, a projection negative and said projection optical system and onto a substrate;
said annular stop being provided at a position where a plurality of images are formed by said illumination optical system;
said apparatus satisfying the following conditions:
⅓≦d1/d2≦⅔ 0.45≦NA2/NA1≦0.8 where d1 is an inner diameter of an opening of said annular stop, d2 is an outer diameter of the opening of said annular stop, NA1 is the numerical aperture of said projection optical system at a side of said projection negative and NA2 is the numerical aperture of said condenser optical system at an exit side determined by the outer diameter of the opening of said annular stop.
23. A projection exposure apparatus comprising:
an illuminating optical system; and
a projection optical system;
said illuminating optical system including a light source, an optical integrator, an annular stop and a condenser optical system;
light from said light source passing through said optical integrator, said condenser optical system, a projection negative and said projection optical system and onto a substrate;
said illuminating optical system forming a plurality of annular light source images satisfying the following condition:
⅓≦d1/d2≦⅔ where d1 is an inner diameter of said plurality of annular light source images and d2 is an outer diameter of said plurality of annular light source images; and
said projection exposure apparatus satisfying the following condition:
0.45≦NA2/NA1≦0.8, where NA1 is the numerical aperture of said projection optical system at a side of said projection negative, and NA2 is the numerical aperture of said condenser optical system at an exit side determined by an outer diameter of an opening of said annular stop.
1. A projection exposure apparatus including:
illuminating optical means for illuminating a projection negative; and
projection optical means for projection-exposing said projection negative illuminated by said illuminating optical means onto a substrate;
said illuminating optical means including light source means for supplying exposure light, annular light source forming means for forming an annular secondary light source, which has a plurality of light source images, by the light from said light source means, and condenser means for condensing light from said annular light source forming means on said projection negative;
said apparatus satisfying the following condition:
⅓≦d1/d2≦⅔, where d1 is the inner diameter of said annular secondary light source, and d2 is the outer diameter of said annular secondary light source;
said apparatus also satisfying the following condition:
0.45≦NA2/NA1≦0.8, where NA1 is the numerical aperture of said projection optical means, and NA2 is the numerical aperture of said illuminating optical means determined by the outer diameter of said annular secondary light source.
25. A projection exposure apparatus comprising:
an illuminating optical system; and
a projection optical system;
said illuminating optical system including a light source, an optical integrator, a first annular stop, a second annular stop and a condenser optical system;
light from said light source passing through said optical integrator, said condenser optical system, a projection negative and said projection optical system and onto a substrate;
said first and second annular stops satisfying the following condition:
⅓≦d1/d2≦⅔, where d1 is an inner diameter of an opening of said annular stops and d2 is an outer diameter of an opening of said annular stops;
said first and second annular stops being selectively disposed in a position where a plurality of light source images are formed by said illuminating optical system; and
said projection exposure apparatus satisfying the following condition:
0.45≦NA2/NA1≦0.8, where NA1 is the numerical aperture of said projection optical system at a side of said projection negative, and NA2 is the numerical aperture of said condenser optical system at an exit side determined by the outer diameter of said plurality of annular light source images.
24. A projection exposure apparatus comprising:
an illuminating optical system; and
a projection optical system;
said illuminating optical system including a light source, an optical integrator and a condenser optical system;
light from said light source passing through said optical integrator, said condenser optical system, a projection negative and said projection optical system and onto a substrate;
said illuminating optical system forming a plurality of annular light source images satisfying the following condition:
⅓≦d1/d2≦⅔, where d1 is an inner diameter of said plurality of annular light source images, d2 is an outer diameter of said plurality of annular light source images;
the ratio between the inner diameter and the outer diameter of said annular light source images being variable within the range of said condition;
said projection exposure apparatus satisfying the following condition:
0.45≦NA2/NA1≦0.8, where NA1 is the numerical aperture of said projection optical system at a side of said projection negative, and NA2 is the numerical aperture of said condenser optical system at an exit side determined by the outer diameter of said plurality of annular light source images.
12. A projection exposure apparatus including:
illumination optical means for illuminating a projection negative; and
projection optical means for projection-exposing said projection negative illuminated by said illumination optical means onto a substrate;
said illumination optical means including light source means for supplying exposure light, means for forming a secondary light source, which has a plurality of light source images, by the light from said light source means, means including annular ratio changing means for converting said secondary light source into an annular secondary light source and changing a ratio between an inner diameter and outer diameter of said annular secondary light source, and condenser means for condensing light from said annular secondary light source onto said projection negative,
said apparatus satisfying the following condition:
⅓≦d1/d2≦⅔ where d1 is the inner diameter of said annular secondary light source, and d2 is the outer diameter of said annular secondary light source, and said apparatus satisfying the following condition:
0.45≦NA2/NA1≦0.8 where NA1 is the numerical aperture of said projection optical means, and NA2 is the numerical aperture of said illumination optical means determined by the outer diameter of said annular secondary light source.
2. A projection exposure apparatus according to
an optical integrator; and
stop means disposed in the optical path of light emerging from said optical integrator and having an annular opening portion.
3. A projection exposure apparatus according to
4. A projection exposure apparatus according to
5. A projection exposure apparatus according to
6. A projection exposure apparatus according to
7. A projection exposure apparatus according to
driving means for disposing one of said plurality of opening portions in said optical path;
input means for inputting information regarding various conditions during exposure; and
control means for controlling said driving means on the basis of the input information from said input means.
8. A projection exposure apparatus according to
9. A projection exposure apparatus according to
driving means for varying said diameter of the opening of said aperture stop;
input means for inputting information regarding various conditions during exposure; and
control means for controlling said driving means on the basis of the input information from said input means.
10. A projection exposure apparatus according to
11. A projection exposure apparatus according to
13. A projection exposure apparatus according to
14. A projection exposure apparatus according to
15. A projection exposure apparatus according to
16. A projection exposure apparatus according to
17. A projection exposure apparatus according to
driving means for disposing one of said plurality of opening portions in said optical path;
input means for inputting information regarding various conditions during exposure; and
control means for controlling said driving means on the basis of the input information from said input means.
18. A projection exposure apparatus according to
input means for inputting information regarding various conditions during exposure; and
control means for controlling said annular ratio changing means on the basis of the input information from said input means.
19. A projection exposure apparatus according to
20. A projection exposure apparatus according to
0. 27. An apparatus according to
0. 28. An apparatus according to
0. 29. An apparatus according to
0.45≦NA2/NA1≦0.8 wherein NA1 is the numerical aperture of said projection optical system, and NA2 is the numerical aperture of said illumination optical system determined by the outer diameter of said annular secondary light source.
0. 30. An apparatus according to
0. 31. An apparatus according to
0. 32. An apparatus according to
0. 34. An apparatus according to
0. 35. An apparatus according to
0. 36. An apparatus according to
0. 37. An apparatus according to
0. 38. An apparatus according to
0. 40. An apparatus according to
0. 41. An apparatus according to
1/3≦d1/d2 wherein d1 is the inner diameter of the annular secondary light source and d2 is the outer diameter of the annular secondary light source.
0. 42. An apparatus according to
0.45≦NA2/NA1 wherein NA1 is a numerical aperture of said projection optical system, and NA2 is a numerical aperture of said illumination optical system determined by the outer diameter of said variable annular illumination source.
0. 43. An apparatus according to
0. 44. An apparatus according to
0. 45. An apparatus according to
0. 46. An apparatus according to
0. 48. An apparatus according to
0.45≦NA2/NA1 wherein NA1 is a numerical aperture of said projection optical system, and NA2 is a numerical aperture of said illumination optical system determined by the outer diameter of said variable annular illumination source.
0. 49. An apparatus according to
0. 50. An apparatus according to
0. 51. An apparatus according to
1/3≦d1/d2 wherein d1 is the inner diameter of the annular secondary light source and d2 is the outer diameter of the annular secondary light source.
0. 52. An apparatus according to
1/3≦d1/d2 wherein d1 is the inner diameter of the annular secondary light source and d2 is the outer diameter of the annular secondary light source.
0. 54. An apparatus according to
0. 55. An apparatus according to
0. 56. An apparatus according to
0. 57. An apparatus according to
0. 58. An apparatus according to
1/3≦d1/d2 wherein d1 is the inner diameter of the annular secondary light source and d2 is the outer diameter of the annular secondary light source.
0. 59. An apparatus according to
0.45≦NA2/NA1 wherein NA1 is a numerical aperture of said projection optical system, and NA2 is a numerical aperture of said illumination optical system determined by the outer diameter of said variable annular illumination source.
0. 60. An apparatus according to
0. 61. An apparatus according to
0.45≦NA2/NA1 wherein NA1 is a numerical aperture of said projection optical system, and NA2 is a numerical aperture of said illumination optical system determined by the outer diameter of said variable annular illumination source.
0. 63. An apparatus according to
0.45≦NA2/NA1 wherein NA1 is a numerical aperture of said projection optical system, and NA2 is a numerical aperture of said illumination optical system determined by the outer diameter of said variable annular illumination source.
0. 64. An apparatus according to
an optical integrator disposed in an optical path between said optical system and the mask, said optical integrator including a fly-eye type integrator or an internal reflection type integrator.
0. 65. An apparatus according to
0. 66. An apparatus according to
0. 67. An apparatus according to
0. 68. An apparatus according to
0. 69. An apparatus according to
1/3≦d1/d2≦ 2/3 where d1 is the inner diameter of the annular secondary light source and d2 is the outer diameter of the annular secondary light source.
0. 70. An apparatus according to
0. 71. An apparatus according to
0. 72. An apparatus according to
0. 73. An apparatus according to
0. 74. An apparatus according to
0. 76. An apparatus according to
0. 77. An apparatus according to
0. 78. An apparatus according to
0. 79. An apparatus according to
0. 80. An apparatus according to
0. 81. An apparatus according to
0. 82. An apparatus according to
1/3≦d1/d2 wherein d1 is the inner diameter of the annular secondary light source and d2 is the outer diameter of the annular secondary light source.
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where d1 is the inner diameter of the annular secondary light source, and d2 is the outer diameter of the annular secondary light source.
As described above, the projection exposure apparatus according to an embodiment of the present invention is designed to illuminate the reticle by the exposure light from the light source means, i.e., effect so-called annular illumination (or inclined illumination).
At this time, the annular secondary light source of the annular light source forming means is designed to satisfy the above-mentioned conditional expression (1), whereby the depth of focus of projection means can be improved to achieve an improvement in practical resolution.
When as an example, the wavelength λ of light source means is i-line (365 nm) and the wafer side numerical aperture NA of a projection lens is 0.4, the line width which can be resolved by a prior-art exposure apparatus in which the process coefficient is 0.7 is of the order of 0.64 μm from k×λ/NA, while in the projection exposure apparatus according to an embodiment of the present invention, the process coefficient k is of the order of 0.5 and therefore, the line width which can be resolved is 0.46 μm. Thus, it will be seen that in the projection exposure apparatus according to the present invention, an improvement in resolution after a practically more sufficient depth of focus than in the prior-art apparatus has been secured is achieved.
If the lower limit of the above condition (1) is exceeded, the inner diameter of the annular second light source becomes too small, and the effect or advantage caused by the annular illumination according to the invention is reduced so that it is difficult to improve depth of focus as well as resolution of the projection optical system.
If the upper limit of the condition (1) is exceeded, the width of each line forming a pattern or patterns on a reticle, which width is uniform and the same, becomes uneven or varied depending on repetition of the lines or line-to-line distances of the pattern when transferred onto the wafer, and accordingly it is not possible to transfer the pattern on the reticle onto the wafer accurately.
Further, if the upper limit of the condition (1) is exceeded, change in line width for change in exposure amount is enlarged and it is difficult to form a pattern of a desired line width on the wafer.
Further, to sufficiently bring out the effect of annular illumination according to the present invention, it is desirable that when the projection negative side numerical aperture of the projection optical means is NA1 and the numerical aperture of the illuminating optical means determined by the outer diameter of the annular secondary light source is NA2, the projection exposure apparatus according to the present invention be designed to the following conditional expression (2):
0.45≦NA2/NA1≦0.8 (2)
If the lower limit of this conditional expression (2) is exceeded, the angle of incidence of the light which inclination-illuminates the reticle by annular illumination will become small and the effect of annular illumination according to the present invention can hardly be obtained. Therefore, effecting annular illumination will become meaningless in itself.
If conversely, the upper limit of conditional expression (2) is exceeded, the resolution as a spatial image will be improved, but the depth of focus will be reduced. Further, the contrast at the best focus will be greatly reduced, and this is not preferable.
As described above, in the projection exposure apparatus according to the present invention, a depth of focus greater than in the prior-art projection exposure apparatus can be secured and therefore, exposure under a practically higher resolution can be realized. Thereby, more minute patterns than in the prior-art projection exposure apparatus can be transferred onto wafers.
Other objects, features and effects of the present invention will become fully apparent from the following detailed description taken in conjunction with the accompanying drawings.
Some embodiments of the present invention will hereinafter be described with reference to the drawings.
Light (for example, light of g-line (436 nm), i-line (365 nm) or the like) from a mercury arc lamp 1 is condensed by an elliptical mirror 2 and is converted into a parallel light beam by a collimator lens 4 via a reflecting mirror 3. Thereafter, when the parallel light beam passes through a fly-eye lens 5 (optical integrator) comprised of an aggregate of a plurality of bar-like lens elements, a plurality of light source images are formed on the exit side thereof corresponding to the number of the bar-like lens elements constituting the fly-eye lens 5.
An aperture stop 6 having an annular transmitting portion is provided at a location whereat the secondary light source is formed, and here is formed an annular light source.
The aperture stop 6, as shown in
When here, the diameter of the light intercepting member 6b of the aperture stop 6 (the inner diameter of the annular transmitting portion 6a) is d1 and the diameter of the light intercepting member 6c of the aperture stop 6 (the outer diameter of the annular transmitting portion 6a) is d2 and d1/d2 is defined as an annular ratio, the annular ratio of the aperture stop 6 is designed within a range of ⅓ to ⅔.
Now, the light from the annular secondary light source formed by the aperture stop 6 is condensed by a condenser lens 8 via a reflecting mirror 7 and superposedly uniformly illuminate a circuit pattern 9a on a reticle 9 from an oblique direction. Thereupon, the image of the circuit pattern on the reticle 9 is formed on the exposure area of a wafer 11 by a projection optical system 10. Accordingly, resist applied onto the wafer 11 is sensitized and the image of the circuit pattern on the reticle 9 is transferred thereto.
Thereafter, the projection exposure apparatus drives a stage 12 on which the wafer 11 is placed, and moves the wafer 11 so that the circuit pattern can be transferred to an area discrete from the afore-mentioned exposure area. The illuminated circuit pattern on the reticle 9 is then transferred by the projection optical system 10. In this manner, the projection exposure apparatus transfers circuit patterns in succession onto the wafer 11.
An aperture stop 10a is provided at the position of the pupil (entrance pupil) of the projection optical system 10, and this aperture stop 10a is provided conjugately with the aperture stop 6.
When here, the diameter of the opening portion of the aperture stop 10a is D3, the ratio (D2/D3) of the outer diameter of the image of the secondary light source to the diameter of the opening portion A of the aperture stop 10a is called a coherence factor, i.e., σ value, and at this time, the image I of the annular secondary light source is formed within the range of the σ value of 0.45 to 0.8, as shown in FIG. 3.
When as shown in
σ=NA2/NA1
Now, in the process of printing a circuit pattern on the wafer 11, there are various processes such as a process in which the printing of a minute pattern is required, and a process in which a great depth of focus is required, and the optimum depth of focus and resolution in each of these processes are found.
Therefore, in the present embodiment, the aperture of the aperture stop 10a is variably designed and the σ value is varied to thereby control the depth of focus and resolution on the wafer 11.
A desired depth of focus and resolution are first input by means of an input portion 16 such as a keyboard. A control portion 14 determines the σ value on the basis of this input information, and controls a driving portion 15 for varying the aperture of the aperture stop 10a. The driving portion 15 varies the diameter of the opening portion A of the aperture stop 10a and changes the σ value.
Also, as shown in
As described above, in the present embodiment, annular illumination is effected by the disposition of the aperture stop 6 and therefore, greater improvements in the depth of focus and resolution can be achieved. Further, the σ value is variable and therefore, an optimum illuminating condition conforming to each process can be achieved.
Also, in the embodiments shown in
In
Only the differences of the second embodiment from the first embodiment will hereinafter be described in detail. In the projection exposure apparatus shown in
In the present embodiment, the aperture stops (60b-60c, 60f-60h) having optimum annular ratios are set on the exit side of the fly-eye lens 5 and the depth of focus and resolution on the wafer 11 are controlled.
Turning back to
Process information and information regarding the required depth of focus and minimum line width are input by the use of the input portion 16 such as a keyboard.
On the basis of such input information, the control portion 14 selects one of the aperture stops (60b-60c, 60f-60h). The control portion 14 then controls a driving portion 61 for driving the circular substrate 60 so that the selected one of the aperture stops (60b-60c, 60f-60h) may be positioned on the exit side of the fly-eye lens 5.
Thereby, the depth of focus and resolution on the wafer 11 can be controlled and therefore, optimum annular illumination under an optimum σ value can be accomplished. Also, of the aperture stops (60a, 60e) having an usual circular opening are set on the exit side of the fly-eye lens 5, exposure by usual illumination can be accomplished.
Also, as shown in
A third embodiment of the present invention will now be described with reference to
The difference of the third embodiment from the first embodiment is that instead of the aperture stop 6 provided between the fly-eye lens 5 and the reflecting mirror 7, there are provided a condensing lens 20 and a light guide 21 comprised of a plurality of optical fibers having their entrance sides bundled into a circular shape and having their exit sides bundled into an annular shape, and a number of annular light sources are formed without intercepting a light beam from the fly-eye lens 5.
In the third embodiment of
As shown in
The ratio of the inner diameter of the exit end of the light guide 21 to the outer diameter of the exit end of the light guide 21, i.e., the annular ratio, is designed so as to be ⅓ to ⅔, and as shown in
By the above-described construction, in the present embodiment, annular illumination can be effected efficiently without intercepting the light from the light source 1 and therefore, not only greater improvements in the depth of focus and resolution can be achieved, but also exposure under a high throughput can be accomplished.
Again in the present embodiment, as described above, means for detecting a mark including various kinds of information on the reticle may be provided and on the basis of the information detected thereby, the optimum diameter of the opening portion of the aperture stop 10a may be set, and annular illumination under an optimum σ value may be effected.
Further, in the present embodiment, provision may be made of a plurality of light guides differing in annular ratio and outer diameter from one another and design may be made such that in conformity with the required depth of focus and resolution, one of the plurality of light guides is positioned between the condensing lens 20 and the condenser lens 8. Thereby, the depth of focus and resolution can be controlled without the illumination efficiency being reduced and optimum annular illumination under an optimum σ value can be accomplished.
Of course, an excimer laser (KrF: 248 nm, ArF: 193 nm, etc.) may be used as the light source of the projection exposure apparatus according to the present embodiment.
Also, in the embodiment shown in
In the embodiment shown in
In the embodiment shown in
Further, in the embodiment shown in
In the above described embodiments, the aperture stop may be formed by a transparent type liquid crystal display device, an electrochromic device or the like.
Ushida, Kazuo, Kameyama, Masaomi, Mori, Takashi
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