A semiconducting processing method for making electrical contacts with an active area in sub-micron geometries includes: (a) providing a pair of conductive runners on a semiconductor wafer; (b) providing insulative spacers on the sides of the conductive runners wherein adjacent spacers are spaced a selected distance apart at a selected location on the wafer; (c) providing an active area between the conductive runners at the selected location; (d) providing an oxide layer over the active area and conductive runners; (e) providing a planarized nitride layer atop the oxide layer; (f) patterning and etching the nitride layer selectively relative to the oxide layer to define a first contact opening therethrough, wherein the first contact opening has an aperture width at the nitride layer upper surface which is greater than the selected distance between the insulative spacers; (g) etching the oxide layer within the first contact opening to expose the active area; (h) providing a polysilicon plug within the first contact opening over the exposed active areas; (i) providing an insulating layer over the nitride layer and the polysilicon plug; (j) patterning and etching the insulating layer to form a second contact opening to and exposing the polysilicon plug; and (k) providing a conductive layer over the insulating layer and into the second opening to electrically contact the polysilicon plug. A semiconductor device having buried landing plugs of approximately uniform height across the wafer is also described.
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0. 29. A method of processing a device comprising a transistor, said method comprising:
providing a plug in electrical communication with said transistor;
providing a conductive material in electrical communication with said plug; and
providing an insulating layer lateral to said conductive material, wherein said step of providing an insulating layer occurs before said step of providing a conductive material.
0. 27. A method of providing electrical communication with a transistor including a source/drain, said method comprising:
providing a conductor over said source/drain that extends upward and is laterally surrounded by a first layer of insulation;
providing a second layer of insulation over said first layer of insulation, wherein said second layer of insulation is higher than said conductor and exposes said conductor; and
allowing electrical communication with said source/drain only by way of said conductor.
0. 17. A semiconductor processing method of forming an electrical contact structure for an active area on a semiconductor wafer, the method comprising the following steps:
providing a pair of conductive runners on a semiconductor wafer, individual conductive runners having sides;
providing an insulative layer on the mutually adjacent sides of the conductive runners, the insulated mutually adjacent sides of adjacent conductive runners being spaced a selected distance apart;
providing an active area between the insulated mutually adjacent sides of conductive runners;
providing a layer of first oxide to a selected thickness over the active area and conductive runners, the first oxide layer selected thickness being less than one-half the selected distance between the insulated sides of adjacent conductive runners;
providing a first insulating layer having a planarized upper surface atop the first oxide layer, the first layer of insulating material being selectively etchable relative to the first oxide;
patterning the first insulating layer for definition of a first contact opening therethrough to the active area;
etching the patterned first insulating layer selectively relative to the first oxide layer to define the first contact opening therethrough, the first contact opening having an aperture width at the first insulating layer planarized upper surface, the aperture width being greater than the selected distance between the insulated sides of adjacent conductive runners;
etching the first oxide layer within the first contact opening to expose the active area; and
providing a conductive plug of within the first contact opening over the exposed active area.
0. 22. A semiconductor processing method of forming an electrical contact structure for an active area on a semiconductor wafer, the method comprising the following steps:
providing a pair of conductive runners on a semiconductor wafer, individual conductive runners having sides;
providing an insulative layer on the mutually adjacent sides of the conductive runners, the insulated mutually adjacent sides of adjacent conductive runners being spaced a selected distance apart;
providing an active area between the insulated mutually adjacent sides of conductive runners;
providing a layer of first oxide to a selected thickness over the active area and conductive runners, the first oxide layer selected thickness being less than one-half the selected distance between the insulated sides of adjacent conductive runners;
providing a first insulating layer having a planarized upper surface atop the first oxide layer, the first insulating layer being selectively etchable relative to the first oxide, said step performed by,
providing a conformal first layer of insulating material atop the first oxide layers; and
polishing the wafer to planarize the first insulating layer upper surface;
patterning the first insulating layer for definition of a first contact opening therethrough to the active area;
etching the patterned first insulating layer selectively relative to the first oxide layer to define the first contact opening therethrough, the first contact opening having an aperture width at the first insulating layer planarized upper surface, the aperture width being greater than the selected distance between the insulated sides of adjacent conductive runners;
etching the first oxide layer within the first contact opening to expose the active area; and
providing a conductive plug within the first contact opening over the exposed active area.
0. 23. A semiconductor processing method for making electrical contact with an active area on a semiconductor wafer comprising the steps of:
providing a pair of conductive runners on a semiconductor wafer, individual conductive runners having a top and sides;
providing insulative spacers on mutually adjacent sides of the runners, the insulative spacers being spaced a selected distance apart at a selected location on the wafer;
providing an active area between the conductive runners at the selected location;
depositing a first oxide layer over the wafer to a thickness from about 100 to 1,000 Angstroms, the first oxide layer having an upper surface defining a highest elevational location above the active area;
providing a nitride layer having an upper surface over the first oxide layer to a selected thickness, the nitride layer upper surface defining a lowest elevational location above the active area which is elevationally higher than the highest elevational location of the first oxide layer, the nitride being selectively etchable relative to the first oxide;
planarizing an upper surface of the nitride layer to a first elevational height above the active area, the first elevational height being higher than the highest elevational location of the first oxide layer upper surface;
patterning the nitride layer for definition of a first contact opening therethrough to the active area;
etching the patterned nitride layer selectively relative to the first oxide layer to define the first contact opening therethrough, the first contact opening having an aperture width at the nitride layer upper surface which is greater than the selected distance between the insulative spacers at the mutually adjacent sides of the conductive runners;
etching the first oxide layer within the first contact opening to expose the active area;
providing a polysilicon plug within the first contact opening over the exposed active area to a second elevational height; and
depositing a second oxide layer over the nitride layer and the polysilicon plug.
0. 1. A semiconductor processing method of making electrical contact with an active area on a semiconductor wafer, the method comprising the following steps:
providing a pair of conductive runners on a semiconductor wafer, individual conductive runners having sides;
providing an insulative layer on the sides of the conductive runners, the insulative sides of adjacent conductive runners being spaced a selected distance apart at a selected location on the wafer;
providing an active area between the conductive runners at the selected location;
providing a layer of first oxide to a selected thickness over the active area and conductive runners, the first oxide layer selected thickness being less than one-half the selected distance between the insulative sides of adjacent conductive runners;
providing a first planarized layer of insulating material atop the first oxide layer, the first layer of insulating material being selectively etchable relative to the first oxide, the first layer of insulating material having an upper surface;
patterning the planarized first insulating layer for definition of a first contact opening therethrough to the active area;
etching the patterned first insulating layer selectively relative to the first oxide layer to define the first contact opening therethrough, the first contact opening having an aperture width at the planarized first insulating layer upper surface, the aperture width being greater than the selected distance between the insulative sides of adjacent conductive runners;
etching the first oxide layer within the first contact opening to expose the active area;
providing a plug of conductive material within the first contact opening over the exposed active area;
providing a second insulating layer over the first insulating layer and the conductive plug;
patterning and etching the second insulating layer to form a second contact opening to and exposing the conductive plug; and
providing a conductive layer over the second insulating layer and into the second contact opening, the conductive layer electrically contacting the conductive plug.
0. 2. A semiconductor processing method according to
0. 3. A semiconductor processing method according to
0. 4. A semiconductor processing method according to
0. 5. A semiconductor processing method according to
0. 6. A semiconductor processing method according to
providing a conformal first layer of insulating material atop the first oxide layer; and
chemical mechanical polishing the wafer to planarize the first insulating layer.
0. 7. A semiconductor processing method according to
providing a layer of conductive material over the first insulating layer and within the first contact opening over the exposed active area;
chemical mechanical polishing the wafer to remove the conductive layer from the first insulating layer upper surface and to define a plug within the first contact opening, the plug having an upper surface slightly below the first insulating layer upper surface to ensure that the plug is electrically isolated.
0. 8. A semiconductor processing method according to
0. 9. A semiconductor processing method according to
the first insulating layer is formed of a nitride;
the conductive plug is formed of polysilicon; and
the second insulating layer is etched with an etchant selective to both the nitride insulating layer and the polysilicon plug.
0. 10. A semiconductor processing method for making electrical contact with an active area on a semiconductor wafer comprising the steps of:
providing a pair of conductive runners on a semiconductor wafer, individual conductive runners having a top and sides;
providing insulative spacers on the sides of the runners, the insulative spacers being spaced a selected distance apart at a selected location on the wafer;
providing an active area between the conductive runners at the selected location;
depositing a first oxide layer over the wafer to a thickness from about 100 to 1,000 Angstroms, the first oxide layer having an upper surface defining a highest elevational location above the active area;
providing a nitride layer having an upper surface over the first oxide layer to a selected thickness, the nitride layer upper surface defining a lowest elevational location above the active area which is elevationally higher than the highest elevational location of the first oxide layer, the nitride being selectively etchable relative to the first oxide;
planarizing the nitride layer to a first elevational height above the active area, the first elevational height being higher than the highest elevational location of the first oxide layer;
patterning the planarized nitride layer for definition of a first contact opening therethrough to the active area;
etching the patterned nitride layer selectively relative to the first oxide layer to define the first contact opening therethrough, the first contact opening having an aperture width at the nitride layer upper surface which is greater than the selected distance between the insulative sides of adjacent conductive runners;
etching the first oxide layer within the first contact opening to expose the active area;
providing a polysilicon plug within the first contact opening over the exposed active area to a second elevational height;
depositing a second oxide layer over the nitride layer and the polysilicon plug;
patterning and etching the second oxide layer to form a second contact opening to and exposing the polysilicon plug; and
providing a conductive layer over the second oxide layer and into the second contact opening, the conductive layer electrically contacting the conductive plug.
0. 11. A semiconductor processing method according to
0. 12. A semiconductor processing method according to
0. 13. A semiconductor processing method according to
providing a layer of polysilicon over the nitride layer and within the first contact opening over the exposed active area;
chemical mechanical polishing the wafer to remove the polysilicon layer from the nitride layer upper surface and to define a polysilicon plug within the first contact opening.
0. 14. A semiconductor processing method according to
0. 15. A semiconductor processing method according to
0. 16. A semiconductor processing method according to
0. 18. A semiconductor processing method according to
providing a layer of conductive material over the first insulating layer and within the first contact opening over the exposed active area; and
polishing the wafer to remove the conductive layer from the first insulating layer planarized upper surface and to define the conductive plug within the first contact opening, the plug having an upper surface slightly below the first insulating layer planarized upper surface.
0. 19. A semiconductor processing method according to
providing a second insulating layer and the conductive plug; and
patterning and etching the second insulating layer to form a second contact opening to expose the conductive plug.
0. 20. A semiconductor processing method according to
0. 21. A semiconductor processing method according to
forming the first insulating layer of a nitride;
forming the conductive plug of polysilicon; and
etching the second insulating layer with an etchant selective to both the nitride insulating layer and the polysilicon plug.
0. 24. A semiconductor processing method according to
0. 25. A semiconductor processing method according to
providing a layer of polysilicon over the nitride layer and within the first contact opening over the exposed active area; and
polishing the wafer to remove the polysilicon layer from the nitride layer upper surface and to define a polysilicon plug within the first contact opening.
0. 26. A semiconductor processing method according to
0. 28. The method in
0. 30. The method in
0. 31. The method in
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Notice: More than one reissue application has been filed for the reissue of U.S. Pat. No. 5,229,326. The reissue applications are U.S. application Ser. No. 09/488,099 (the present application) and U.S. application Ser. No. 08/504,943, now RE 36,518, of which the present application is a continuation.
This invention relates to semiconductor processing methods for making electrical contact with an active area and more particularly, for making electrical contact with an active area through sub-micron contact openings. This invention also relates to semiconductor devices having buried contact plugs.
As semiconductor devices are scaled down to increase packing density, distances between adjacent components are becoming increasingly smaller. Sub-micron geometries are possible with currently available technologies. In some high-density memory devices, distances between adjacent word lines are required to be 0.4 micron or less to produce a sufficiently dense cell. At these geometries, problems arise when attempting to define contact openings to active areas between these adjacent, tightly spaced word lines. Present photolithographic alignment and metallization techniques are only possible to 0.35 micron features, with a misalignment error of ±0.15 micron. Without the use of self-aligned active area contacts, the minimum word line spacing would be approximately greater than 0.85 micron which is equal to the minimum photolithographic feature of 0.35 micron, plus twice the misalignment tolerance of 0.15 micron, plus twice the processing margin of 0.10 micron (or, 0.35 micron+2×0.15 micron+2×0.10 micron=0.85 micron). Present processing techniques are therefore incapable of producing narrow and properly aligned contact openings to active areas for geometries of 0.4 micron or less.
This invention provides a processing method for making contacts to active areas between semiconductor word line (conductive runners) having sub-micron geometries.
One or more preferred embodiments of the invention are described below with reference to the following accompanying drawings.
This disclosure of the invention is submitted in furtherance of the constitutional purposes of the U.S. Patent Laws “to promote the progress of science and useful arts” (Article 1, Section 8).
In accordance with one aspect of the invention, a semiconductor processing method of making electrical contact with an active area on a semiconductor wafer comprises the following steps:
providing a pair of conductive runners on a semiconductor wafer, individual conductive runners having sides;
providing an insulative layer on the sides of the conductive runners, the insulative sides of adjacent conductive runners being spaced a selected distance apart at a selected location on the wafer;
providing an active area between the conductive runners at the selected location;
providing a layer of first oxide to a selected thickness over the active area and conductive runners, the first oxide layer selected thickness being less than one-half the selected distance between the insulative sides of adjacent conductive runners;
providing a first planarized layer of insulating material atop the first oxide layer, the first layer of insulating material being selectively etchable relative to the first oxide, the first layer of insulating material having an upper surface;
patterning the planarized first insulating layer for definition of a first contact opening therethrough to the active area;
etching the patterned first insulating layer selectively relative to the first oxide layer to define the first contact opening therethrough, the first contact opening having an aperture width at the planarized first insulating layer upper surface, the aperture width being greater than the selected distance between the insulative sides of adjacent conductive runners;
etching the first oxide layer within the first contact opening to expose the active area;
providing a plug of conductive material within the first contact opening over the exposed active area;
providing a second insulating layer over the first insulating layer and the conductive plug;
patterning and etching the second insulating layer to form a second contact opening to and exposing the conductive plug; and providing a conductive layer over the second insulating layer and into the second contact opening, the conductive layer electrically contacting the conductive plug.
In accordance with another aspect of the invention, the step of providing a first planarized layer of insulating material comprises:
providing a conformal first layer of insulating material atop the first oxide layer; and
chemical mechanical polishing the wafer to planarize the first insulating layer.
In accordance with yet another aspect of the invention, a semiconductor device comprises:
conductive runners formed on the semiconductor wafer, individual runners having a top and sides;
insulative spacers provided on the sides of the conductive runners, the spacers of adjacent runners being spaced a selected distance apart at selected locations on the wafer;
active areas positioned between the conductive runners at the selected locations;
an insulating layer with an upper surface formed over the runners, the insulating layer having first contact openings between adjacent runners above the selected locations, the first contact openings having an aperture width at the upper surface which is greater than the selected distance;
conductive plugs disposed in the first contact openings to electrically contact the active areas, individual conductive plugs having a substantially flat upper surface, the upper surfaces of the conductive plugs being approximately uniform in elevational height across the wafer;
an oxide layer provided above the insulating layer and having second contact openings formed therethrough which extend to the upper surfaces of the conductive plugs; and
a conductive layer disposed above the oxide layer and in the second contact openings to electrically contact the conductive plugs.
A semiconductor processing method of making electrical contact with an active area on a semiconductor wafer is described with reference to
In
An insulative layer is provided over wafer 10, and then patterned and etched to define insulative spacers 34 on the sides of conductive runners 20, 22, 24, and 26. Insulative spacers 34 on the sides of adjacent conductive runners 20, 22 and 24, 26 are spaced a distance D apart at a selected location on wafer 10 in which a buried contact is eventually formed.
An impurity is implanted into substrate 12 to define source/drain regions 36, 38, 40, and 42. In subsequent steps discussed below, buried contact openings are formed to expose source/drain region 38 of active area 16 and source/drain region 40 of active area 18.
In
A thick conformal first layer of insulating material 48 is provided on top of first oxide layer 44. First insulating layer 48 is formed of a material which is selectively etchable relative to first oxide layer 44, and is preferably formed of a nitride. First insulating layer 48 has an upper surface 50 which generally follows the contour defined by the underlying topography of the runners and field oxide. Upper surface 50 defines a lowest elevational location H above active areas 16 and 18 which is elevationally higher than highest elevational location K of first oxide layer 44.
In
In
In
In
One of the advantages of this invention is that plugs 58 and 60 have relatively large upper surface areas. The distance across plugs 58 and 60 at upper surfaces 62 and 64 is equal to width W of contact openings 54 and 56 (FIG. 4). This distance is significantly greater than distance D (
According to one aspect of the invention, conductive plugs 58 and 60 are formed by providing a layer of conductive material (preferably polysilicon) over first insulating layer 48 and within first contact openings 54 and 56. The semiconductor wafer is then subjected to chemical mechanical polishing to remove the conductive layer from upper surface 52 of first insulating layer 48. All the conductive material is removed from upper surface 52 to electrically isolate individual plugs 58 and 60 and to prevent formation of undesired stray conductive traces between conductive plugs 58 and 60. To help insure that all conductive material is removed from upper surface 52, plugs 58 and 60 are over polished such that plug surfaces 62 ad 64 are slightly below first insulating layer upper surface 52. In this manner, individual plugs 58 and 60 are electrically isolated from one another.
An alternative technique to chemical mechanical polishing is to subject the layer of conductive material to a resist etch back process to define the slightly recessed plug surfaces 62 and 64 of respective plugs 58 and 60.
In
In
In
Another advantage provided by this invention relates to misalignment tolerance. In
This invention defines a processing method for submicron geometries, and is most useful at geometries of less than 0.4 micron. The combined thin oxide and thick nitride layers afford a structure suitable for highly selective etching to define contact openings on the scale of 0.3 to 0.4 micron. The uniformly elevated and significantly wide landing plugs provide an easy target for conventional photolithographic techniques when forming the second contact openings. Additionally, the wide landing plugs provide misalignment tolerance which helps increase production yield.
In compliance with the statute, the invention has been described in language more or less specific as to methodical features. It is to be understood, however, that the invention is not limited to the specific features described, since the means herein disclosed comprise preferred forms of putting the invention into effect. The invention is, therefore, claimed in any of its forms or modifications within the proper scope of the appended claims appropriately interpreted in accordance with the doctrine of equivalents.
Blalock, Guy T., Dennison, Charles H.
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