The present invention provides a single-layer type electrophotosensitive material comprising a conductive substrate and a photosensitive layer formed on the conductive substrate, wherein the photosensitive layer contains a phthalocyanine compound as an electric charge generating material, a hole transferring material and an electron transferring material in a binder resin, and that a difference in absolute value between a plus polarity sensitivity and a minus polarity sensitivity measured under the conditions of an exposure wavelength of 780 nm and an exposure energy of 1.0 μJ/cm2 is not more than 500 312 V, and a reversal development type digital image forming apparatus using the electrophotosensitive material, which does not include a charge neutralizing step.
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9. A method of producing a single-layer type electrophotosensitive material comprising a conductive substrate and a photosensitive layer formed on the conductive substrate, the photosensitive layer containing a phthalocyanine compound as an electric charge generating material, a hole transferring material and an electron transferring material in a binder resin, characterized in that the photosensitive layer is formed by selecting the phthalocyanine compound, hole transferring material, electron transferring material and binder resin so that a difference in absolute value between a plus polarity sensitivity and a minus polarity sensitivity is not more than 500 312 V under the measuring conditions of an exposure wavelength of 780 nm and an exposure energy of 1.0 μJ/cm2.
1. A single-layer type electrophotosensitive material comprising a conductive substrate and a photosensitive layer formed on the conductive substrate, characterized in that the photosensitive layer contains a phthalocyanine compound as an electric charge generating material, a hole transferring material and an electron transferring material in a binder resin, and that a difference in absolute value between a plus polarity sensitivity and a minus polarity sensitivity measured under the conditions of an exposure wavelength of 780 nm and an exposure energy of 1.0 μJ/cm2 is not more than 500 V 312 V, wherein the single-layer type electrophotosensitive material is used in a method including charging the electrophotosensitive material, exposing an image to form a static latent image, developing the static image to form a toner image, and transferring the toner image along a forward direction of the electrophotosensitive material, the method not including a charge neutralizing step.
2. The single-layer type electrophotosensitive material according to
3. The single-layer type electrophotosensitive material according to
wherein R1 and R3 are the same or different and each represents an alkyl group which may have a substituent, an aryl group which may have a substituent, or an aralkyl or alkoxy group which may have a substituent; and R2 and R4 are the same or different and each represents a hydrogen atom, or an alkyl or alkoxy group which may have a substituent, provided that R2 and R4 are hydrogen atoms when R2 and R4 are substituted at the para-position.
4. The single-layer type electrophotosensitive material according to
wherein R5 represents a halogen atom, or an alkyl or aryl group which may have a substituent; and R6 represents an alkyl or alkoxy group which may have a substituent, or a group: —O—R6a, which represents an alkyl or aryl group which may have a substituent;
the general formula (3):
##STR00011##
wherein R7 and R8 are the same or different and each represents an alkyl group, a halogenated alkyl group, an aryl group, an aralkyl group, an alkoxy group, an aryloxy group, an aralkyloxy group, an acyl group, an alkoxycarbonyl group, an aryloxycarbonyl group, an aralkyloxycarbonyl group, or a nitro group; and n represents an integer of 0 to 3;
the general formula (4):
##STR00012##
wherein R9a, R9b, R9c and R9d are the same or different and each represents a hydrogen atom, or an alkyl or aryl group which may have a substituent; and
the general formula (5):
##STR00013##
wherein R10 and R11 are the same or different and each represents an alkyl group, a halogenated alkyl group, an aryl group, an aralkyl group, an alkoxy group, an aryloxy group, an aralkyloxy group, an acyl group, an alkoxycarbonyl group, an aryloxycarbonyl group, an aralkyloxycarbonyl group, or nitro group; and n represents an integer of 0 to 3.
5. The single-layer type electrophotosensitive material according to
6. The single-layer type electrophotosensitive material according to
7. The single-layer type electrophotosensitive material according to
8. The single-layer type electrophotosensitive material according to
10. The method of producing a single-layer type electrophotosensitive material according to
wherein R5 represents a halogen atom, or an alkyl or aryl group which may have a substituent; and R6 represents an alkyl or alkoxy group which may have a substituent, or a group: —O—R6a, which represents an alkyl or aryl group which may have a substituent;
the formula (3):
##STR00015##
wherein R7 and R8 are the same or different and each represents an alkyl group, a halogenated alkyl group, an aryl group, an aralkyl group, an alkoxy group, an aryloxy group, an aralkyloxy group, an acyl group, an alkoxycarbonyl group, an aryloxycarbonyl group, an aralkyloxycarbonyl group, or a nitro group; and n represents an integer of 0 to 3;
the formula (4):
##STR00016##
wherein R9a, R9b, R9c and R9d are the same or different and each represents a hydrogen atom,
or an alkyl or aryl group which may have a substituent; and the formula (5):
##STR00017##
wherein R10 and R11 are the same or different and each represents an alkyl group, a halogenated alkyl group, an aryl group, an aralkyl group, an alkoxy group, an aryloxy group, an aralkyloxy group, an acyl group, an alkoxycarbonyl group, an aryloxycarbonyl group, an aralkyloxycarbonyl group, or nitro group; and n represents an integer of 0 to 3.
11. A method for reversal development in a digital image forming apparatus comprising charging the apparatus with the single-layer type electrophotosensitive material of
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100 msec 50 msec.) was irradiated (exposure energy: 1.0 μJ/cm2) with monochromic light having a wavelength of 780 nm (half-width: 20 nm, light intensity: 20 μW/cm2) from white light of a halogen lamp as an exposure light source through a band-pass filter, and then a surface potential at the time at which 500 msec. have passed since the beginning of exposure was measured as a potential after exposure VLP (V). The smaller the potential after exposure, the higher the sensitivity of the photosensitive material.
[Evaluation of minus polarity sensitivity]
In the same manner as in case of the <evaluation of plus polarity sensitivity>, except that a voltage was applied to the electrophotosensitive materials of the respective Examples and Comparative Examples to charge the surface at −800 V using a drum sensitivity tester (manufactured by GENTEC Co. under the trade name of GENTEC SINCIA 30 M)), a surface potential at the time at which 500 msec. have passed since the beginning of exposure was measured as a potential after exposure VLN (V)
<Evaluation of transfer memory potential>
After the electrophotosensitive materials of the respective Examples and Comparative Examples were installed in a multifunction printer Antico 40 excluding a charge neutralizing lamp, manufactured by KYOCERA-MITA Co., Ltd., a surface potential on application of no transfer bias and a surface potential on application of a transfer bias after the following charge step were measured and a difference between them was taken as a transfer memory potential. The case where the transfer memory potential is 45 V or less at which no transfer memory image is generated was rated “Pass”, whereas, the case where the transfer memory potential is 45 V or more was rated “Fail”.
<Evaluation of exposure memory potential>
After the electrophotosensitive materials of the respective Examples and Comparative Examples were installed in a multifunction printer Antico 40 excluding a charge neutralizing lamp, manufactured by KYOCERA-MITA Co., Ltd., a surface potential on no exposure and a surface potential on exposure after the following charge step were measured and a difference between them was taken as an exposure memory potential. Similar to the case of the transfer memory potential, the case where the exposure memory potential is 45 V or less at which no transfer memory image is generated was rated “Pass”, whereas, the case where the exposure memory potential is 45 V or more was rated “Fail”.
<Evaluation of transfer memory image>
After the electrophotosensitive materials of the respective Examples and Comparative Examples were installed in a multifunction printer Antico 40 excluding a charge neutralizing lamp, manufactured by KYOCERA-MITA Co., Ltd., a printing test was carried out and it was visually judged whether a transfer memory image is generated or not. As shown in FIG. 2, the transfer memory image refers to an image wherein a black lateral band was generated in a drum longitudinal direction by a reduction in surface potential of the photosensitive material at the portion to which the transfer bias was applied in case where the printing test was carried out using an original having a gray front surface (Munsell value: N=6.5).
<Evaluation of exposure memory image>
After the electrophotosensitive materials of the respective Examples and Comparative Examples were installed in a multifunction printer Antico 40 excluding a charge neutralizing lamp, manufactured by KYOCERA-MITA Co., Ltd., a printing test was carried out and it was visually judged whether an exposure memory image is generated or not. The exposure memory image refers to an image wherein a ghost image of the exposed portion was generated at the gray portion by a reduction in surface potential of the photosensitive material at the strongly exposed portion (black solid portion) in case where the printing test was carried out using an original as shown in FIG. 3.
TABLE 1
Plus
Minus
Difference in
Transfer
Exposure
Exposure
polarity
polarity
absolute value
memory
memory
memory
Kind of
sensitivity
sensitivity
of sensitivity
potential
potential
Transfer
potential
ETM
(V)
(V)
(V)
(V)
(V)
memory image
(V)
Example 1
ET-1
132
150
18
15
10
No memory image
No memory image
was generated
was generated
Example 2
ET-2
141
290
149
20
26
No memory image
No memory image
was generated
was generated
Example 3
ET-3
144
341
197
30
32
No memory image
No memory image
was generated
was generated
Example 4
ET-4
150
352
202
26
10
No memory image
No memory image
was generated
was generated
Example 5
ET-5
131
153
22
15
25
No memory image
No memory image
was generated
was generated
Example 6
ET-6
205
322
117
35
32
No memory image
No memory image
was generated
was generated
Example 7
ET-7
252
550
298
35
36
No memory image
No memory image
was generated
was generated
Example 8
ET-8
223
704
481
25
44
No memory image
No memory image
was generated
was generated
Comp.
ET-9
131
652
521
55
66
Lateral black
Ghost image was
Example 1
band was
generated
generated
Comp.
ET-10
123
663
540
70
76
Lateral black
Ghost image was
Example 2
band was
generated
generated
Comp.
ET-11
130
661
531
85
90
Lateral black
Ghost image was
Example 3
band was
generated
generated
TABLE 2
Plus
Minus
Difference in
Transfer
Exposure
Exposure
polarity
polarity
absolute value
memory
memory
memory
Kind of
sensitivity
sensitivity
of sensitivity
potential
potential
Transfer
potential
ETM
(V)
(V)
(V)
(V)
(V)
memory image
(V)
Example 9
ET-1
109
128
19
13
4
No memory image
No memory image
was generated
was generated
Example 10
ET-2
112
250
138
18
24
No memory image
No memory image
was generated
was generated
Example 11
ET-3
109
312
203
24
29
No memory image
No memory image
was generated
was generated
Example 12
ET-4
115
320
205
22
5
No memory image
No memory image
was generated
was generated
Example 13
ET-5
108
322
14
13
25
No memory image
No memory image
122
was generated
was generated
Example 14
ET-6
173
290
117
32
30
No memory image
No memory image
was generated
was generated
Example 15
ET-7
211
523
312
33
30
No memory image
No memory image
was generated
was generated
Example 16
ET-8
189
675
486
20
42
No memory image
No memory image
was generated
was generated
Comp.
ET-9
100
623
523
56
60
Lateral black
Ghost image was
Example 4
band was
generated
generated
Comp.
ET-10
95
630
535
68
70
Lateral black
Ghost image was
Example 5
band was
generated
generated
Comp.
ET-11
103
620
517
90
86
Lateral black
Ghost image was
Example 6
band was
generated
generated
As is apparent from Table 1, Table 2 and FIG. 1, when a difference in absolute value between a plus polarity sensitivity and a minus polarity sensitivity is 500 V or less, both of a transfer memory potential and an exposure memory potential becomes 45 V or less so that no memory image is generated.
The disclosure of Japanese Patent Application Serial No. 11-302914, filed on Oct. 25, 1999, is incorporated herein by reference.
Tanaka, Yuji, Hayashi, Masakatsu, Iwasaki, Hiroaki, Imanaka, Yukikatsu
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