The present invention provides a single-layer type electrophotosensitive material comprising a conductive substrate and a photosensitive layer formed on the conductive substrate, wherein the photosensitive layer contains a phthalocyanine compound as an electric charge generating material, a hole transferring material and an electron transferring material in a binder resin, and that a difference in absolute value between a plus polarity sensitivity and a minus polarity sensitivity measured under the conditions of an exposure wavelength of 780 nm and an exposure energy of 1.0 μJ/cm2 is not more than 500 312 V, and a reversal development type digital image forming apparatus using the electrophotosensitive material, which does not include a charge neutralizing step.
  
		  
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			 9.  A method of producing a single-layer type electrophotosensitive material comprising a conductive substrate and a photosensitive layer formed on the conductive substrate, the photosensitive layer containing a phthalocyanine compound as an electric charge generating material, a hole transferring material and an electron transferring material in a binder resin, characterized in that the photosensitive layer is formed by selecting the phthalocyanine compound, hole transferring material, electron transferring material and binder resin so that a difference in absolute value between a plus polarity sensitivity and a minus polarity sensitivity is not more than 500  312 V under the measuring conditions of an exposure wavelength of 780 nm and an exposure energy of 1.0 μJ/cm2. 
1.  A single-layer type electrophotosensitive material comprising a conductive substrate and a photosensitive layer formed on the conductive substrate, characterized in that the photosensitive layer contains a phthalocyanine compound as an electric charge generating material, a hole transferring material and an electron transferring material in a binder resin, and that a difference in absolute value between a plus polarity sensitivity and a minus polarity sensitivity measured under the conditions of an exposure wavelength of 780 nm and an exposure energy of 1.0 μJ/cm2 is not more than 500 V  312 V, wherein the single-layer type electrophotosensitive material is used in a method including charging the electrophotosensitive material, exposing an image to form a static latent image, developing the static image to form a toner image, and transferring the toner image along a forward direction of the electrophotosensitive material, the method not including a charge neutralizing step.  
			  
			  
			  2.  The single-layer type electrophotosensitive material according to  
3.  The single-layer type electrophotosensitive material according to  
wherein R1 and R3 are the same or different and each represents an alkyl group which may have a substituent, an aryl group which may have a substituent, or an aralkyl or alkoxy group which may have a substituent; and R2 and R4 are the same or different and each represents a hydrogen atom, or an alkyl or alkoxy group which may have a substituent, provided that R2 and R4 are hydrogen atoms when R2 and R4 are substituted at the para-position. 
4.  The single-layer type electrophotosensitive material according to  
wherein R5 represents a halogen atom, or an alkyl or aryl group which may have a substituent; and R6 represents an alkyl or alkoxy group which may have a substituent, or a group: —O—R6a, which represents an alkyl or aryl group which may have a substituent; 
the general formula (3): 
##STR00011##
 
wherein R7 and R8 are the same or different and each represents an alkyl group, a halogenated alkyl group, an aryl group, an aralkyl group, an alkoxy group, an aryloxy group, an aralkyloxy group, an acyl group, an alkoxycarbonyl group, an aryloxycarbonyl group, an aralkyloxycarbonyl group, or a nitro group; and n represents an integer of 0 to 3; 
the general formula (4): 
##STR00012##
 
wherein R9a, R9b, R9c and R9d are the same or different and each represents a hydrogen atom, or an alkyl or aryl group which may have a substituent; and 
the general formula (5): 
##STR00013##
 
wherein R10 and R11 are the same or different and each represents an alkyl group, a halogenated alkyl group, an aryl group, an aralkyl group, an alkoxy group, an aryloxy group, an aralkyloxy group, an acyl group, an alkoxycarbonyl group, an aryloxycarbonyl group, an aralkyloxycarbonyl group, or nitro group; and n represents an integer of 0 to 3. 
5.  The single-layer type electrophotosensitive material according to  
6.  The single-layer type electrophotosensitive material according to  
7.  The single-layer type electrophotosensitive material according to  
8.  The single-layer type electrophotosensitive material according to  
10.  The method of producing a single-layer type electrophotosensitive material according to  
wherein R5 represents a halogen atom, or an alkyl or aryl group which may have a substituent; and R6 represents an alkyl or alkoxy group which may have a substituent, or a group: —O—R6a, which represents an alkyl or aryl group which may have a substituent; 
the formula (3): 
##STR00015##
 
wherein R7 and R8 are the same or different and each represents an alkyl group, a halogenated alkyl group, an aryl group, an aralkyl group, an alkoxy group, an aryloxy group, an aralkyloxy group, an acyl group, an alkoxycarbonyl group, an aryloxycarbonyl group, an aralkyloxycarbonyl group, or a nitro group; and n represents an integer of 0 to 3; 
the formula (4): 
##STR00016##
 
wherein R9a, R9b, R9c and R9d are the same or different and each represents a hydrogen atom, 
or an alkyl or aryl group which may have a substituent; and the formula (5): 
##STR00017##
 
wherein R10 and R11 are the same or different and each represents an alkyl group, a halogenated alkyl group, an aryl group, an aralkyl group, an alkoxy group, an aryloxy group, an aralkyloxy group, an acyl group, an alkoxycarbonyl group, an aryloxycarbonyl group, an aralkyloxycarbonyl group, or nitro group; and n represents an integer of 0 to 3. 
11.  A method for reversal development in a digital image forming apparatus comprising charging the apparatus with  the single-layer type electrophotosensitive material of  
			  
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100 msec 50 msec.) was irradiated (exposure energy: 1.0 μJ/cm2) with monochromic light having a wavelength of 780 nm (half-width: 20 nm, light intensity: 20 μW/cm2) from white light of a halogen lamp as an exposure light source through a band-pass filter, and then a surface potential at the time at which 500 msec. have passed since the beginning of exposure was measured as a potential after exposure VLP (V). The smaller the potential after exposure, the higher the sensitivity of the photosensitive material.
[Evaluation of minus polarity sensitivity]
In the same manner as in case of the <evaluation of plus polarity sensitivity>, except that a voltage was applied to the electrophotosensitive materials of the respective Examples and Comparative Examples to charge the surface at −800 V using a drum sensitivity tester (manufactured by GENTEC Co. under the trade name of GENTEC SINCIA 30 M)), a surface potential at the time at which 500 msec. have passed since the beginning of exposure was measured as a potential after exposure VLN (V)
<Evaluation of transfer memory potential>
After the electrophotosensitive materials of the respective Examples and Comparative Examples were installed in a multifunction printer Antico 40 excluding a charge neutralizing lamp, manufactured by KYOCERA-MITA Co., Ltd., a surface potential on application of no transfer bias and a surface potential on application of a transfer bias after the following charge step were measured and a difference between them was taken as a transfer memory potential. The case where the transfer memory potential is 45 V or less at which no transfer memory image is generated was rated “Pass”, whereas, the case where the transfer memory potential is 45 V or more was rated “Fail”.
<Evaluation of exposure memory potential>
After the electrophotosensitive materials of the respective Examples and Comparative Examples were installed in a multifunction printer Antico 40 excluding a charge neutralizing lamp, manufactured by KYOCERA-MITA Co., Ltd., a surface potential on no exposure and a surface potential on exposure after the following charge step were measured and a difference between them was taken as an exposure memory potential. Similar to the case of the transfer memory potential, the case where the exposure memory potential is 45 V or less at which no transfer memory image is generated was rated “Pass”, whereas, the case where the exposure memory potential is 45 V or more was rated “Fail”.
<Evaluation of transfer memory image>
After the electrophotosensitive materials of the respective Examples and Comparative Examples were installed in a multifunction printer Antico 40 excluding a charge neutralizing lamp, manufactured by KYOCERA-MITA Co., Ltd., a printing test was carried out and it was visually judged whether a transfer memory image is generated or not. As shown in FIG. 2, the transfer memory image refers to an image wherein a black lateral band was generated in a drum longitudinal direction by a reduction in surface potential of the photosensitive material at the portion to which the transfer bias was applied in case where the printing test was carried out using an original having a gray front surface (Munsell value: N=6.5).
<Evaluation of exposure memory image>
After the electrophotosensitive materials of the respective Examples and Comparative Examples were installed in a multifunction printer Antico 40 excluding a charge neutralizing lamp, manufactured by KYOCERA-MITA Co., Ltd., a printing test was carried out and it was visually judged whether an exposure memory image is generated or not. The exposure memory image refers to an image wherein a ghost image of the exposed portion was generated at the gray portion by a reduction in surface potential of the photosensitive material at the strongly exposed portion (black solid portion) in case where the printing test was carried out using an original as shown in FIG. 3.
 
 TABLE 1 
 
 
 
 
 
 Plus 
Minus 
Difference in 
Transfer 
Exposure 
 Exposure 
 
 
 polarity 
polarity 
absolute value 
memory 
memory 
 memory 
 
  Kind of 
sensitivity 
sensitivity 
of sensitivity 
potential 
potential 
Transfer 
potential 
 
  ETM 
(V) 
(V) 
(V) 
(V) 
(V) 
memory image 
(V) 
 
 
 
 
 
 
Example 1 
ET-1 
132 
150 
18 
15 
10 
No memory image 
No memory image 
 
 
 
 
 
 
 
 was generated 
was generated 
 
Example 2 
ET-2 
141 
290 
149 
20 
26 
No memory image 
No memory image 
 
 
 
 
 
 
 
 was generated 
was generated 
 
Example 3 
ET-3 
144 
341 
197 
30 
32 
No memory image 
No memory image 
 
 
 
 
 
 
 
 was generated 
was generated 
 
Example 4 
ET-4 
150 
352 
202 
26 
10 
No memory image 
No memory image 
 
 
 
 
 
 
 
 was generated 
was generated 
 
Example 5 
ET-5 
131 
153 
22 
15 
25 
No memory image 
No memory image 
 
 
 
 
 
 
 
 was generated 
was generated 
 
Example 6 
ET-6 
205 
322 
117 
35 
32 
No memory image 
No memory image 
 
 
 
 
 
 
 
 was generated 
was generated 
 
Example 7 
ET-7 
252 
550 
298 
35 
36 
No memory image 
No memory image 
 
 
 
 
 
 
 
 was generated 
was generated 
 
Example 8 
ET-8 
223 
704 
481 
25 
44 
No memory image 
No memory image 
 
 
 
 
 
 
 
 was generated 
was generated 
 
Comp. 
ET-9 
131 
652 
521 
55 
66 
Lateral black 
Ghost image was 
 
Example 1 
 
 
 
 
 
 band was 
generated 
 
 
 
 
 
 
 
 generated 
 
Comp. 
ET-10 
123 
663 
540 
70 
76 
Lateral black 
Ghost image was 
 
Example 2 
 
 
 
 
 
 band was 
generated 
 
 
 
 
 
 
 
 generated 
 
Comp. 
ET-11 
130 
661 
531 
85 
90 
Lateral black 
Ghost image was 
 
Example 3 
 
 
 
 
 
 band was 
generated 
 
 
 
 
 
 
 
 generated 
 
 
 
 TABLE 2 
 
 
 
 
 
 Plus 
Minus 
Difference in 
Transfer 
Exposure 
 Exposure 
 
 
 polarity 
polarity 
absolute value 
memory 
memory 
 memory 
 
  Kind of 
sensitivity 
sensitivity 
of sensitivity 
potential 
potential 
Transfer 
potential 
 
  ETM 
(V) 
(V) 
(V) 
(V) 
(V) 
memory image 
(V) 
 
 
 
 
 
 
Example 9 
ET-1 
109 
128 
19 
13 
4 
No memory image 
No memory image 
 
 
 
 
 
 
 
 was generated 
was generated 
 
Example 10 
ET-2 
112 
250 
138 
18 
24 
No memory image 
No memory image 
 
 
 
 
 
 
 
 was generated 
was generated 
 
Example 11 
ET-3 
109 
312 
203 
24 
29 
No memory image 
No memory image 
 
 
 
 
 
 
 
 was generated 
was generated 
 
Example 12 
ET-4 
115 
320 
205 
22 
5 
No memory image 
No memory image 
 
 
 
 
 
 
 
 was generated 
was generated 
 
Example 13 
ET-5 
108 
322  
14 
13 
25 
No memory image 
No memory image 
 
 
 
 122 
 
 
 was generated 
was generated 
 
Example 14 
ET-6 
173 
290 
117 
32 
30 
No memory image 
No memory image 
 
 
 
 
 
 
 
 was generated 
was generated 
 
Example 15 
ET-7 
211 
523 
312 
33 
30 
No memory image 
No memory image 
 
 
 
 
 
 
 
 was generated 
was generated 
 
Example 16 
ET-8 
189 
675 
486 
20 
42 
No memory image 
No memory image 
 
 
 
 
 
 
 
 was generated 
was generated 
 
Comp. 
ET-9 
100 
623 
523 
56 
60 
Lateral black 
Ghost image was 
 
Example 4 
 
 
 
 
 
 band was 
generated 
 
 
 
 
 
 
 
 generated 
 
Comp. 
ET-10 
95 
630 
535 
68 
70 
Lateral black 
Ghost image was 
 
Example 5 
 
 
 
 
 
 band was 
generated 
 
 
 
 
 
 
 
 generated 
 
Comp. 
ET-11 
103 
620 
517 
90 
86 
Lateral black 
Ghost image was 
 
Example 6 
 
 
 
 
 
 band was 
generated 
 
 
 
 
 
 
 
 generated 
 
 
As is apparent from Table 1, Table 2 and FIG. 1, when a difference in absolute value between a plus polarity sensitivity and a minus polarity sensitivity is 500 V or less, both of a transfer memory potential and an exposure memory potential becomes 45 V or less so that no memory image is generated.
The disclosure of Japanese Patent Application Serial No. 11-302914, filed on Oct. 25, 1999, is incorporated herein by reference.
Tanaka, Yuji, Hayashi, Masakatsu, Iwasaki, Hiroaki, Imanaka, Yukikatsu
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