An immersion lithographic apparatus includes a voltage generator or power source that applies a potential difference to an object in contact with the immersion liquid such that bubbles and/or particles in the immersion liquid are either attracted or repelled from that object due to the electrokinetic potential of the surface of the bubble in the immersion liquid.
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31. A device manufacturing method, comprising:
projecting a patterned beam of radiation onto a target portion of a substrate using a projection system;
providing an immersion liquid from a liquid supply system to the space between the projection system and the substrate; and
applying a force on at least one of bubbles and particles, when in the space, in the immersion liquid provided by the liquid supply system by applying a charge to an object.
0. 34. A lithographic apparatus, comprising:
a substrate table configured to hold a substrate;
a projection system configured to project a patterned beam onto a target portion of the substrate;
a liquid supply system configured to at least partly fill a space between the projection system and the substrate with an immersion liquid; and
a force applicator constructed and arranged to move particles, when in the space, in the immersion liquid independent of the flow or pressure of the immersion liquid, the particles being of different material than the immersion liquid.
0. 45. A lithographic apparatus, comprising:
a substrate table configured to hold a substrate;
a projection system configured to project a patterned beam onto a target portion of the substrate;
a liquid supply system configured to at least partly fill a space between the projection system and the substrate with an immersion liquid; and
a force applicator constructed and arranged in a supply channel upstream of the space to move particles, when in the space, in the immersion liquid independent of the flow or pressure of the immersion liquid, the particles being of different material than the immersion liquid.
0. 44. A lithographic apparatus, comprising:
a substrate table configured to hold a substrate;
a projection system configured to project a patterned beam onto a target portion of the substrate;
a liquid supply system configured to at least partly fill a space between the projection system and the substrate with an immersion liquid; and
a force applicator constructed and arranged to move particles in the immersion liquid independent of the flow or pressure of the immersion liquid and from the substrate, from an optical axis of the projection system, or from both the substrate and the optical axis, the particles being of different material than the immersion liquid.
30. A lithographic apparatus, comprising:
a support configured to support a patterning structure which is configured to impart a beam of radiation with a pattern in its cross-section;
a substrate table configured to hold a substrate;
a projection system configured to project the patterned beam onto a target portion of the substrate;
a liquid supply system configured to at least partly fill a space between the projection system and the substrate with an immersion liquid;
the liquid supply system having a potential field generator configured to generate an electrical field in the immersion liquid effective to move at least one of bubbles and particles, when in the space, in the immersion liquid supplied by the liquid supply system.
28. A lithographic apparatus, comprising:
a support configured to support a patterning structure which is configured to impart a beam of radiation with a pattern in its cross-section;
a substrate table configured to hold a substrate;
a projection system configured to project the patterned beam onto a target portion of the substrate;
a liquid supply system configured to at least partly fill a space between the projection system and the substrate with an immersion liquid; and
the liquid supply system having means for moving at least one of bubbles and particles, when in the space, in the immersion liquid supplied by the liquid supply system by the application of a voltage to the immersion liquid, the bubbles and/or the particles.
1. A lithographic apparatus, comprising:
an illumination system configured to provide a projection beam of radiation;
a support configured to support a patterning structure which is configured to impart the projection beam with a pattern in its cross-section;
a substrate table configured to hold a substrate;
a projection system configured to project the patterned beam onto a target portion of the substrate;
a liquid supply system configured to at least partly fill a space between the projection system and the substrate with an immersion liquid; and
a power source configured to apply a first electrical potential across the immersion liquid supplied by the liquid supply system to move at least one of bubbles and particles, when in the space, in the immersion liquid.
29. A lithographic apparatus, comprising:
a support configured to support a patterning structure configured to impart a beam of radiation with a pattern in its cross-section;
a substrate table configured to hold a substrate;
a projection system configured to project the patterned beam onto a target portion of the substrate;
a liquid supply system configured to at least partly fill a space between the projection system and the substrate with an immersion liquid, wherein the liquid supply system comprises means for applying a charge to an object, the charge being the same or opposite in polarity to an electrokinetic potential of bubbles in the immersion liquid such that at least one of bubbles and particles, when in the space, in the immersion liquid supplied by the liquid supply system have a force on them in a direction away from or towards the object.
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33. A method according to
0. 35. An apparatus according to claim 34, wherein the force applicator is constructed and arranged to move the particles (i) away from the substrate, or (ii) from an optical axis of the projection system, or (iii) towards a final optical element of the projection system, or (iv) towards a liquid confinement structure, or (v) towards an object close to a final optical element of the projection system, or (vi) any combination selected from (i)-(v).
0. 36. An apparatus according to claim 34, wherein the force applicator comprises a power source.
0. 37. An apparatus according to claim 36, wherein the power source is configured to apply a first electrical potential across the immersion liquid.
0. 38. An apparatus according to claim 37, wherein the first electrical potential is applied to a first object.
0. 39. An apparatus according to claim 38, wherein the first object is in contact with the immersion liquid.
0. 40. An apparatus according to claim 38, wherein the first object forms a border of the space.
0. 41. An apparatus according to claim 38, wherein the first object is in contact with the immersion liquid in a supply channel upstream of the space.
0. 42. An apparatus according to claim 34, further comprising an illumination system configured to provide a projection beam of radiation.
0. 43. An apparatus according to claim 34, further comprising a support configured to support a patterning structure, the patterning structure configured to impart a projection beam with a pattern in its cross-section.
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More than one reissue application has been filed for the reissue of Pat. No. 7,050,146. The reissue applications are continuation reissue application No. 13/214,955 and parent reissue application No. 12/153,717 (the present application), all of which are reissue applications of Pat. No. 7,050,146.
1. Field of the Invention
The present invention relates to a lithographic apparatus and a device manufacturing method.
2. Description of the Related Art
A lithographic apparatus is a machine that applies a desired pattern onto a target portion of a substrate. Lithographic apparatus can be used, for example, in the manufacture of integrated circuits (ICs). In that circumstance, a patterning structure, such as a mask, may be used to generate a circuit pattern corresponding to an individual layer of the IC, and this pattern can be imaged onto a target portion (e.g. including part of one or several dies) on a substrate (e.g. a silicon wafer) that has a layer of radiation-sensitive material (resist). In general, a single substrate will contain a network of adjacent target portions that are successively exposed. Known lithographic apparatus include so-called steppers, in which each target portion is irradiated by exposing an entire pattern onto the target portion in one go, and so-called scanners, in which each target portion is irradiated by scanning the pattern through the projection beam in a given direction (the “scanning” direction) while synchronously scanning the substrate parallel or anti-parallel to this direction.
It has been proposed to immerse the substrate in the lithographic projection apparatus in a liquid having a relatively high refractive index, e.g. water, so as to fill a space between the final element of the projection system and the substrate. This enables imaging of smaller features because the exposure radiation will have a shorter wavelength in the liquid. (The effect of the liquid may also be regarded as increasing the effective NA of the system and also increasing the depth of focus.)
However, submersing the substrate or substrate and substrate table in a bath of liquid (see, for example, U.S. Pat. No. 4,509,852) means that there is a large body of liquid that must be accelerated during a scanning exposure. This requires additional or more powerful motors and turbulence in the liquid may lead to undesirable and unpredictable effects.
One of the solutions proposed is for a liquid supply system to provide liquid on only a localized area of the substrate and in between the final element of the projection system and the substrate using a liquid confinement system (the substrate generally has a larger surface area than the final element of the projection system). One way which has been proposed to arrange for this is disclosed in WO 99/49504. As illustrated in
Another solution which has been proposed is to provide the liquid supply system with a seal member which extends along at least a part of a boundary of the space between the final element of the projection system and the substrate table. The seal member is substantially stationary relative to the projection system in the XY plane though there may be some relative movement in the Z direction (in the direction of the optical axis). A seal is formed between the seal member and the surface of the substrate. Preferably the seal is a contactless seal such as a gas seal. Such a system is disclosed in European Patent Application No. 03252955.4 hereby incorporated in its entirety by reference.
Other types of seal members are clearly possible including those with different arrangements of inlets and outlets and also those which are asymmetric.
A difficulty in immersion lithography has been found to be the existence of bubbles in the immersion liquid. These bubbles can be of any size, but bubbles of the order of a few μm have presented a particular problem. This is especially the case when the μm bubbles lie on the surface of the substrate or a sensor which is to be imaged because in this position the bubbles have a maximum disturbing influence on the projection beam.
It is an aspect of the present invention to reduce the effect of bubbles in immersion liquid on the imaging quality in immersion lithography.
According to an aspect of the present invention, there is provided a lithographic apparatus including an illumination system configured to provide projection beam of radiation; a support configured to support a patterning structure, the patterning structure configured to impart the projection beam with a pattern in its cross-section; a substrate table configured to hold a substrate; a projection system configured to project the patterned beam onto a target portion of the substrate; a liquid supply system configured to at least partly fill a space between a final element of the projection system and the substrate with an immersion liquid; and a power source configured to apply a first electrical potential to a first object effective to move bubbles and/or particles in the immersion liquid.
In this way, it is possible to apply a force on bubbles in the immersion liquid in a direction either towards or away from the first object. This is because bubbles in the immersion liquid will have a natural electrokinetic potential which is a potential difference between the surface of the bubble and the fully dissociated ionic concentration in the body of the liquid. Thus, by choosing the first electrical potential to be either the same or opposite polarity to the electrokinetic potential of the bubble it can be determined whether the bubble moves towards or away from the first object. Thus, this system can be used to move bubbles in the immersion liquid to places where their effect on the imaging quality of the apparatus is minimized. The present invention works in the same way on small particles as it does on bubbles.
Preferably, the first object forms a border of the space so that the positions of the bubbles in the immersion liquid in the space can be controlled. Alternatively, the first object can be in contact with the immersion liquid in a supply channel upstream of the space. In this way it is possible to avoid the generation of excessive electrical potential fields in the space which might be deleterious to sensors in the space or might be difficult to arrange for because of the limited space for objects under the projection system.
It is desirable to have a second power source or voltage to apply a second electrical potential to a second object in contact with the immersion liquid. In this way, the force on the bubbles may be increased as the first electrical potential could be made effective to repel the bubbles whilst the second electrical potential could be made effective to attract the bubbles, or vice versa.
In one embodiment, the substrate can be made to be the first object so that bubbles can be repelled from the substrate itself. In another embodiment, the second object can be the final element of the projection system so that bubbles can be attracted towards that and thereby away from the substrate. The first and second objects may be the other way round.
In another embodiment, the first object still forms a border of the space but is positioned distal from the optical axis of the apparatus. In this way bubbles can be moved away from the optical axis of the apparatus so that the liquid through which imaging is actually taking place is substantially free of bubbles.
According to a further aspect of the present invention, there is provided a device manufacturing method including projecting a patterned beam of radiation onto a target portion of a substrate using a projection system; providing an immersion liquid between a final element of the projection system and the substrate; and applying a force on bubbles in the immersion liquid by applying a charge to an object in contact with the immersion liquid.
Although specific reference may be made in this text to the use of lithographic apparatus in the manufacture of ICs, it should be understood that the lithographic apparatus described herein may have other applications, such as the manufacture of integrated optical systems, guidance and detection patterns for magnetic domain memories, liquid-crystal displays (LCDs), thin-film magnetic heads, etc. One of ordinary skill will appreciate that, in the context of such alternative applications, any use of the terms “wafer” or “die” herein may be considered as synonymous with the more general terms “substrate” or “target portion”, respectively. The substrate referred to herein may be processed, before or after exposure, in for example a track (a tool that typically applies a layer of resist to a substrate and develops the exposed resist) or a metrology or inspection tool. Where applicable, the disclosure herein may be applied to such and other substrate processing tools. Further, the substrate may be processed more than once, for example in order to create a multi-layer IC, so that the term substrate used herein may also refer to a substrate that already contains multiple processed layers.
The terms “radiation” and “beam” used herein encompass all types of electromagnetic radiation, including ultraviolet (UV) radiation (e.g. having a wavelength of 365, 248, 193, 157 or 126 nm).
The term “patterning structure” used herein should be broadly interpreted as referring to a structure that can be used to impart a projection beam with a pattern in its cross-section such as to create a pattern in a target portion of the substrate. It should be noted that the pattern imparted to the projection beam may not exactly correspond to the desired pattern in the target portion of the substrate. Generally, the pattern imparted to the projection beam will correspond to a particular functional layer in a device being created in the target portion, such as an integrated circuit.
Patterning structures may be transmissive or reflective. Examples of patterning structures include masks, programmable mirror arrays, and programmable LCD panels. Masks are well known in lithography, and include mask types such as binary, alternating phase-shift, and attenuated phase-shift, as well as various hybrid mask types. An example of a programmable mirror array employs a matrix arrangement of small mirrors, each of which can be individually tilted so as to reflect an incoming radiation beam in different directions. In this manner, the reflected beam is patterned. In each example of a patterning structure, the support structure may be a frame or table, for example, which may be fixed or movable as required and which may ensure that the patterning structure is at a desired position, for example with respect to the projection system. Any use of the terms, “reticle” or “mask” herein may be considered synonymous with the more general term “patterning structure”.
The term “projection system” used herein should be broadly interpreted as encompassing various types of projection system, including refractive optical systems, reflective optical systems, and catadioptric optical systems, as appropriate for example for the exposure radiation being used, or for other factors such as the use of an immersion fluid or the use of a vacuum. Any use of the term “lens” herein may be considered as synonymous with the more general term “projection system”.
The illumination system may also encompass various types of optical components, including refractive, reflective, and catadioptric optical components for directing, shaping, or controlling the projection beam of radiation, and such components may also be referred to below, collectively or singularly, as a “lens”.
The lithographic apparatus may be of a type having two (dual stage) or more substrate tables (and/or two or more mask tables). In such “multiple stage” machines the additional tables may be used in parallel, or preparatory steps may be carried out on one or more tables while one or more other tables are being used for exposure.
Embodiments of the present invention will now be described, by way of example only, with reference to the accompanying schematic drawings in which corresponding reference symbols indicate corresponding parts, and in which:
As here depicted, the apparatus is of a transmissive type (e.g. employing a transmissive mask). Alternatively, the apparatus may be of a reflective type (e.g. employing a programmable mirror array of a type as referred to above).
The illuminator IL receives a beam of radiation from a radiation source LA. The source and the lithographic apparatus may be separate entities, for example when the source is an excimer laser. In such cases, the source is not considered to form part of the lithographic apparatus and the radiation beam is passed from the source LA to the illuminator IL with the aid of a beam delivery system Ex including, for example, suitable directing mirrors and/or a beam expander. In other cases, the source may be an integral part of the apparatus, for example when the source is a mercury lamp. The source LA and the illuminator IL, together with the beam delivery system Ex if required, may be referred to as a radiation system.
The illuminator IL may include an adjusting device AM to adjust the angular intensity distribution of the beam. Generally, at least the outer and/or inner radial extent (commonly referred to as σ-outer and σ-inner, respectively) of the intensity distribution in a pupil plane of the illuminator can be adjusted. In addition, the illuminator IL generally includes various other components, such as an integrator IN and a condenser CO. The illuminator provides a conditioned beam of radiation, referred to as the projection beam PB, having a desired uniformity and intensity distribution in its cross-section.
The projection beam PB is incident on the mask MA, which is held on the mask table MT. Having traversed the mask MA, the projection beam PB passes through the lens PL, which focuses the beam onto a target portion C of the substrate W. With the aid of the second positioning device PW and a position sensor IF (e.g. an interferometric device), the substrate table WT can be moved accurately, e.g. so as to position different target portions C in the path of the beam PB. Similarly, the first positioning device PM and another position sensor (which is not explicitly depicted in
The depicted apparatus can be used in the following preferred modes:
Combinations and/or variations on the above described modes of use or entirely different modes of use may also be employed.
The present invention is applicable to any type of liquid supply system. The supply system may be configured to supply any type of immersion liquid and may use any type of system for confining the immersion liquid between the projection system PL and the substrate W.
The liquid supply system of
Immersion liquid is supplied to the space between the projection system PL and the substrate W through a conduit 30. The immersion liquid is then removed from the space. This removal of liquid is not illustrated but may be in any way, for example by a low pressure source.
Micro bubbles and small particles can be present in the immersion liquid and, if these are close to the surface of the substrate W during imaging, can deleteriously effect the quality of the projected image and the resulting product. The present invention addresses this issue drawing on the discovery made by the mining industry that small solid particles adhere to bubble surfaces in a liquid. It was found that electrical forces between micron size bubbles and the solid particles play an important role in the adhesion. It was found that bubbles in a liquid have, on their surface, an electrokinetic (or zeta) potential which results in a potential difference between the surface of the bubble and the fully disassociated ionic concentration in the body of the liquid. This also applies to small particles.
In the present invention, a power source or voltage supply V (or charge, voltage, electrical field or potential difference generator or supply) is used to apply an electrical potential to one or more objects of the immersion apparatus. The principle of operation is that if repulsion is required a potential difference between the fully disassociated ionic concentration of the liquid and the object is generated, which is of the same polarity as the potential difference between the fully disassociated ionic concentration in the body of the liquid and the surface of the bubble. If attraction between the object and the bubble is required the potential differences should have opposite polarity. In this way forces can be generated on the bubbles towards or away from the objects (e.g. electrodes) which are in contact with the immersion liquid.
In
In pure water, which is a candidate for use as an immersion liquid at 193 nm projection beam wavelength, it has been found that the surface potential of μm bubbles is about −50 mV. This potential will vary with bubble size and also with type of immersion liquid. However, the same principles as described here can be used for other immersion liquids and bubble sizes and the invention is fully applicable to those. Additives may be added to the immersion liquid to change the effect of the surface potential. CaCl2 and NaCl are suitable additives for this purpose.
In
Alternatively, the objects to be charged or have a voltage applied to them could be attached to a surface of the barrier member 10. In
Another place to use the present invention is upstream of the space 5 between the final element 20 of the projection system PL and the substrate W in the liquid supply system. In this case, as the immersion liquid passes along conduits 30 and through a housing 40, oppositely charged and opposing plates (e.g., electrodes) 42, 44 produce a force on the bubbles which is effective to move the bubbles, when the immersion liquid is in the space 5, further away from the substrate W than they would be without the application of the electrical field upstream of the space 5. The immersion liquid with a high concentration of bubbles, i.e. near the electrode 44, could even be removed and not supplied to the space 5. The removed liquid could be subjected to a bubble removal process before being recycled in the liquid supply system.
In all of the above examples, the higher the voltage applied by the voltage generator V the greater the force on the bubbles. The potential on the objects should not be so high as to cause disassociation of the immersion liquid but should be high enough to provide a force on the bubbles such that the present invention is effective. For an immersion liquid comprised mainly of water, typical potential differences applied to the objects are 5 mV to 5V, preferably 10 mV to 500 mV. An electrical field of 5 mV/mm to 500 mV/mm due to the application of the potential is preferred.
In
While specific embodiments of the invention have been described above, it will be appreciated that the invention may be practiced otherwise than as described. The description is not intended to limit the invention.
Kolesnychenko, Aleksey Yurievich, Van Santen, Helmar, Duineveld, Paulus Cornelis, Dirksen, Peter
Patent | Priority | Assignee | Title |
8363208, | Jun 11 2003 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
9036128, | Dec 20 2007 | ASML Netherlands B.V. | Lithographic apparatus and in-line cleaning apparatus |
9110389, | Jun 11 2003 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
9405205, | Dec 20 2007 | ASML Netherlands B.V. | Lithographic apparatus and in-line cleaning apparatus |
9785061, | Dec 20 2007 | ASML Netherlands B.V. | Lithographic apparatus and in-line cleaning apparatus |
9964858, | Jun 11 2003 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
Patent | Priority | Assignee | Title |
3527684, | |||
3573975, | |||
3648587, | |||
4013554, | May 17 1974 | Sachs-Systemtechnik GmbH | Method and apparatus for purifying water contaminated with anodically oxidizable organic matter |
4346164, | Oct 06 1980 | MERCOTRUST AKTIENGESELLSCHAFT, A CORP OF LIECOTENSTEIN | Photolithographic method for the manufacture of integrated circuits |
4390273, | Feb 17 1981 | CENSOR Patent-und Versuchsanstalt | Projection mask as well as a method and apparatus for the embedding thereof and projection printing system |
4396705, | Sep 19 1980 | JAMES RIVER PAPER COMPANY, INC , A CORP OF VA | Pattern forming method and pattern forming apparatus using exposures in a liquid |
4480910, | Mar 18 1981 | Hitachi, Ltd. | Pattern forming apparatus |
4509852, | Oct 06 1980 | MERCOTRUST AKTIENGESELLSCHAFT, A CORP OF LIECOTENSTEIN | Apparatus for the photolithographic manufacture of integrated circuit elements |
4569739, | Dec 31 1984 | Dorr-Oliver Incorporated | Electrofilter using an improved electrode assembly |
5040020, | Mar 31 1988 | Cornell Research Foundation, Inc. | Self-aligned, high resolution resonant dielectric lithography |
5121256, | Mar 14 1991 | The Board of Trustees of the Leland Stanford Junior University | Lithography system employing a solid immersion lens |
5223331, | Jul 31 1990 | Matsushita Electric Industrial Co., Ltd. | Organic device and method for producing the same |
5289001, | Aug 07 1989 | HITACHI PRINTING SOLUTIONS, LTD | Laser beam scanning apparatus having a variable focal distance device and the variable focal distance device for use in the apparatus |
5610683, | Nov 27 1992 | Canon Kabushiki Kaisha | Immersion type projection exposure apparatus |
5715039, | May 19 1995 | Hitachi, LTD | Projection exposure apparatus and method which uses multiple diffraction gratings in order to produce a solid state device with fine patterns |
5825043, | Oct 07 1996 | NIKON PRECISION INC | Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus |
5900354, | Jul 03 1997 | Method for optical inspection and lithography | |
6191429, | Oct 09 1996 | Nikon Precision Inc. | Projection exposure apparatus and method with workpiece area detection |
6207331, | Jul 07 1997 | Fuji Xerox Co., Ltd. | Aqueous image recording method for electrochemically depositing an image forming material |
6236634, | Aug 26 1996 | Digital Papyrus Corporation | Method and apparatus for coupling an optical lens to a disk through a coupling medium having a relatively high index of refraction |
6413401, | Jul 03 1996 | Caliper Technologies Corp. | Variable control of electroosmotic and/or electrophoretic forces within a fluid-containing structure via electrical forces |
6496257, | Nov 21 1997 | Nikon Corporation | Projection exposure apparatus and method |
6560032, | Mar 27 2000 | Olympus Corporation | Liquid immersion lens system and optical apparatus using the same |
6600547, | Sep 24 2001 | Nikon Corporation | Sliding seal |
6603130, | Apr 19 1999 | ASML NETHERLANDS B V | Gas bearings for use with vacuum chambers and their application in lithographic projection apparatuses |
6633365, | Dec 11 2000 | Nikon Corporation | Projection optical system and exposure apparatus having the projection optical system |
6952253, | Nov 12 2002 | ASML NETHERLANDS, B V | Lithographic apparatus and device manufacturing method |
6954256, | Oct 31 2003 | ASML NETHERLANDS B V | Gradient immersion lithography |
7006209, | Jul 25 2003 | GLOBALFOUNDRIES U S INC | Method and apparatus for monitoring and controlling imaging in immersion lithography systems |
7009682, | Nov 18 2002 | ASML NETHERLANDS B V | Lithographic apparatus and device manufacturing method |
7014966, | Sep 02 2003 | GLOBALFOUNDRIES U S INC | Method and apparatus for elimination of bubbles in immersion medium in immersion lithography systems |
7050146, | Feb 09 2004 | ASML NETHERLANDS B V | Lithographic apparatus and device manufacturing method |
7075616, | Nov 12 2002 | ASML NETHERLANDS B V | Lithographic apparatus and device manufacturing method |
7081943, | Nov 12 2002 | ASML NETHERLANDS B V | Lithographic apparatus and device manufacturing method |
7091502, | May 12 2004 | Taiwan Semiconductor Manufacturing, Co., Ltd. | Apparatus and method for immersion lithography |
7193232, | Nov 12 2002 | ASML NETHERLANDS B V | Lithographic apparatus and device manufacturing method with substrate measurement not through liquid |
7199858, | Nov 12 2002 | ASML NETHERLANDS B V | Lithographic apparatus and device manufacturing method |
7213963, | Jun 09 2003 | ASML NETHERLANDS B V | Lithographic apparatus and device manufacturing method |
7224427, | Aug 03 2004 | Taiwan Semiconductor Manufacturing Company, Ltd. | Megasonic immersion lithography exposure apparatus and method |
7224434, | Oct 19 2004 | Canon Kabushiki Kaisha | Exposure method |
7307263, | Jul 14 2004 | ASML NETHERLANDS B V | Lithographic apparatus, radiation system, contaminant trap, device manufacturing method, and method for trapping contaminants in a contaminant trap |
7317504, | Apr 08 2004 | ASML NETHERLANDS B V | Lithographic apparatus and device manufacturing method |
7326522, | Feb 11 2004 | ASML NETHERLANDS B V | Device manufacturing method and a substrate |
7359030, | Nov 29 2002 | ASML NETHERLANDS B V | Lithographic apparatus and device manufacturing method |
7385670, | Oct 05 2004 | ASML NETHERLANDS B V | Lithographic apparatus, cleaning system and cleaning method for in situ removing contamination from a component in a lithographic apparatus |
7394521, | Dec 23 2003 | ASML NETHERLANDS B V | Lithographic apparatus and device manufacturing method |
7405417, | Dec 20 2005 | ASML NETHERLANDS B V | Lithographic apparatus having a monitoring device for detecting contamination |
7462850, | Dec 08 2005 | ASML NETHERLANDS B V | Radical cleaning arrangement for a lithographic apparatus |
20020020821, | |||
20020163629, | |||
20030123040, | |||
20030136668, | |||
20030174408, | |||
20040000627, | |||
20040017989, | |||
20040021844, | |||
20040036019, | |||
20040075895, | |||
20040109237, | |||
20040119954, | |||
20040125351, | |||
20050024609, | |||
20050037269, | |||
20050110973, | |||
20050132914, | |||
20050175776, | |||
20050264774, | |||
20050274898, | |||
20060023185, | |||
20060050351, | |||
20060103818, | |||
20060132731, | |||
20060232757, | |||
20060256316, | |||
20070064215, | |||
20070127001, | |||
20070146657, | |||
20070146658, | |||
20070159610, | |||
20070206279, | |||
20070247600, | |||
20070251543, | |||
20070258072, | |||
20070285631, | |||
20080002162, | |||
20080049201, | |||
20080218712, | |||
20080273181, | |||
20080284990, | |||
20090025753, | |||
20090027635, | |||
20090027636, | |||
DE206607, | |||
DE221263, | |||
DE224448, | |||
DE242880, | |||
DED206607, | |||
DED221563, | |||
EP23231, | |||
EP418427, | |||
EP605103, | |||
EP834773, | |||
EP1039511, | |||
FR2474708, | |||
JP10228661, | |||
JP10255319, | |||
JP10303114, | |||
JP10340846, | |||
JP1078649, | |||
JP11176727, | |||
JP2000058436, | |||
JP2000162761, | |||
JP2001091849, | |||
JP2004193252, | |||
JP2005072404, | |||
JP2005079222, | |||
JP2006134999, | |||
JP3209479, | |||
JP4305915, | |||
JP4305917, | |||
JP58202448, | |||
JP6124873, | |||
JP6168866, | |||
JP62065326, | |||
JP62121417, | |||
JP6262005, | |||
JP63157419, | |||
JP7132262, | |||
JP7220990, | |||
JPP2000323396, | |||
WO3077036, | |||
WO3077037, | |||
WO2004019128, | |||
WO2004053596, | |||
WO2004053950, | |||
WO2004053951, | |||
WO2004053952, | |||
WO2004053953, | |||
WO2004053954, | |||
WO2004053955, | |||
WO2004053956, | |||
WO2004053957, | |||
WO2004053958, | |||
WO2004053959, | |||
WO2004055803, | |||
WO2004057589, | |||
WO2004057590, | |||
WO2005122218, | |||
WO2006041086, | |||
WO2006062065, | |||
WO9949504, |
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