A filter includes at least two different adsorptive media. first, chemisorptive media, which is porous and includes an acidic functional group, is used to remove molecular bases, including ammonia, organic amines, imides and aminoalchols, from the atmosphere used in semiconductor fabrication and other processes that require uncontaminated gaseous environments of high quality. second, physisorptive media is able to adsorb condensable contaminants, particularly those having a boiling point greater than 150 degrees C. The physisorptive media can include untreated, activated carbon.
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0. 43. An apparatus for removing contaminants from a gas in a semiconductor processing device comprising:
a filter enclosure having an inlet for receiving a gas and an outlet for discharging a gas;
a filter system within the enclosure having a plurality of parallel filter elements and at least one filter element in series with at least one of the parallel filter elements, wherein filters positioned in series comprise a first filter element that filters a first contaminant and a second filter element that filters a second contaminant, and further wherein the first filter element comprises a physisorptive filter media and the second filter element comprises a chemisorptive filter media.
21. An apparatus for removing contaminants from a gas in a semiconductor processing device comprising:
a filter enclosure having an inlet for receiving a gas and an outlet for discharging a gas;
a filter system within the enclosure having a plurality of parallel filter elements and at least one filter element in series with at least one of the parallel filter elements; and
a plurality of sampling ports for sampling gas flowing through the enclosure including a sampling port positioned between the at least one filter element that is positioned in series with at least one of the parallel filter elements to collect a gas sample from the gas flowing between the filter elements positioned in series.
1. A method for removing contaminants from a gas in a semiconductor processing device comprising:
flowing a gas through an enclosure having an inlet for receiving the gas and an outlet for discharging the gas;
filtering the gas in the enclosure with a filter unit coupled to the inlet and the outlet and having a plurality of parallel filter elements located within said filter unit for removing at least a portion of said contaminants from said gas passing through said enclosure, the filter unit further comprising at least one filter element positioned in series with at least one of the parallel filter elements; and
sampling the gas with a sampling port coupled to the gas flow between filter elements positioned in series within the filter unit to collect sample data.
0. 35. A method for removing contaminants from a gas in a semiconductor processing device comprising:
flowing a gas through an enclosure having an inlet for receiving the gas and an outlet for discharging the gas;
filtering the gas in the enclosure with a filter unit coupled to the inlet and the outlet and having a plurality of parallel filter elements located within said filter unit for removing at least a portion of said contaminants from said gas passing through said enclosure, the filter unit further comprising at least one filter element positioned in series with at least one of the parallel filter elements, wherein filters positioned in series comprise a first filter element that filters a first contaminant and a second filter element that filters a second contaminant, and further wherein the first filter element comprises a physisorptive filter media and the second filter element comprises a chemisorptive filter media.
3. The method of
5. The method of
11. The method of
12. The method of
13. The method of
14. The method of
15. The method of
16. The method of
17. The method of
18. The method of
19. The method of
20. The method of
22. The apparatus of
24. The apparatus of
25. The apparatus of
26. The apparatus of
27. The apparatus of
28. The apparatus of
31. The apparatus of
32. The apparatus of
33. The apparatus of
34. The apparatus of
0. 36. The method of claim 35 wherein the physisorptive filter media is upstream of chemisorptive filter media.
0. 37. The method of claim 36 wherein the physisorptive media comprises an activated carbon.
0. 38. The method of claim 36 wherein the chemisorptive media comprises an acidic material.
0. 39. The method of claim 38 wherein the acidic material comprises a sulfonated material.
0. 40. The method of claim 39 wherein the sulfonated material comprises a sulfonated divinyl benzene styrene copolymer.
0. 41. The method of claim 38 wherein the acidic material comprises a carboxylic functional group.
0. 42. The method of claim 36 further comprising removing amine contaminants.
0. 44. The apparatus of claim 43 wherein the physisorptive filter media is upstream of chemisorptive filter media.
0. 45. The apparatus of claim 44 wherein said contaminants include amines.
0. 46. The apparatus of claim 44 wherein the physisorptive media comprises an activated carbon.
0. 47. The apparatus of claim 44 wherein the chemisorptive media comprises an acidic material.
0. 48. The apparatus of claim 47 wherein the acidic material comprises a sulfonated material.
0. 49. The apparatus of claim 47 wherein the sulfonated material comprises a sulfonated divinyl benzene styrene copolymer.
0. 50. The apparatus of claim 49 wherein the acidic material comprises a carboxylic functional group.
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The present application is a
Where R° is an organic free radical, and oxygen, O2, reacts as
O220°
Such that
Si—R°+O°Si—R—O or R—Si—O
Repeating the above reaction n-times provides
Si—R+O2Si—O2+R+R—O+ . . .
thereby producing Si—O2, which is a non-volatile inorganic oxide that is condensable on the sacrificial lens 602. Therefore, by exposing the Si—R to UV radiation, the acoustic wave detector 600 is able to detect the amount of Si—R in the sampled air.
Rather than connecting the sampling port to an analytical device, the sampling port 510 can be connected to a concentrator 524, as illustrated in
While this invention has been particularly shown and described with references to preferred embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the scope of the invention encompassed by the appended claims.
Kishkovich, Oleg P., Grayfer, Anatoly, Goodwin, William M., Kinkead, Devon, Ruede, David
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