A solid state image sensor includes an area sensor section having photoelectric conversion pixels arranged in the form of a matrix, a pixel selection section for selecting a pixel of the area sensor section and reading out a video signal, an analog signal processor section for performing signal processing for the video signal, an analog-digital conversion section for converting the processed signal into a digital signal, a digital signal processor section for performing signal processing to convert the digital signal into a digital signal having a predetermined signal format, and an interface section which operates in accordance with an external command, and has the function of selecting a video signal obtained by digitizing a pixel or a signal obtained by performing processing for the luminance and color difference signals of the video signal. These sections are mounted on a single chip.
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1. A solid state image sensor controlled by a command signal, comprising:
an area sensor having pixels arranged two-dimensionally;
an interface configured to receive the command signal;
a selector configured to select one of a plurality of readout schemes of reading out a pixel signal from the area sensor in accordance with the command signal from the interface;
a scanner configured to scan the area sensor in accordance with the scheme selected by the selector, to read out the pixel signal from the area sensor;
an analog signal processor configured to subject the pixel signal to signal processing and output a processed signal;
an analog-to-digital converter configured to convert the processed signal into a digital signal; and
a digital signal processor configured to convert the digital signal into the digital video signal having a predetermined signal format;
wherein said area sensor, said selector, said scanner, said analog signal processor, said analog-to-digital converter, said digital signal processor, and said interface are mounted on a single chip.
2. A solid state image sensor according to
3. A solid state image sensor according to
4. A solid state image sensor according to
5. A solid state image sensor according to
6. A solid state image sensor according to
7. A solid state image sensor according to
8. A solid state image sensor according to
9. A solid state image sensor according to
10. A solid state image sensor according to
11. A solid state image sensor according to
12. A solid state image sensor according to
13. A video system comprising: a solid state image sensor according to
a visual processing unit configured to perform visual information processing by using at least one of the digital video signal, the pixel signal, a status signal of said solid state image sensor, and characteristic information of said solid state image sensor.
0. 14. A solid state image sensor according to claim 1, wherein said interface comprises shared signal lines for inputting the command signal and outputting information.
0. 15. A solid state image sensor according to claim 1, wherein said interface comprises a register storing input information.
0. 16. A solid state image sensor according to claim 1, wherein said interface comprises input lines and a register, information being input to the register through the input lines.
0. 17. A solid state image sensor according to claim 1, further comprising a timing generator, wherein said interface is connected to the timing generator.
0. 18. A solid state image sensor according to claim 17, wherein said interface controls the timing generator based upon the command signal.
0. 19. A solid state image sensor according to claim 1, further comprising a timing generator, wherein said timing generator is controlled based upon the command signal.
0. 20. A video system according to claim 13, wherein said interface comprises shared signal lines for inputting the command signal and outputting information.
0. 21. A video system according to claim 13, wherein said interface comprises a register storing input information.
0. 22. A video system according to claim 13, wherein said interface comprises input lines and a register, information being input to the register through the input lines.
0. 23. A video system according to claim 13, further comprising a timing generator, wherein said interface is connected to the timing generator.
0. 24. A video system according to claim 23, wherein said interface controls the timing generator based upon the command signal.
0. 25. A video system according to claim 13, further comprising a timing generator, wherein said timing generator is controlled based upon the command signal.
0. 26. A video system according to claim 13, further comprising a changing device configured to change a frame rate of the digital video signal in accordance with the command signal.
0. 27. A video system according to claim 13, further comprising a changing device configured to change an effective charge integration time for at least some of said pixels in accordance with the command signal.
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The present invention relates to the structure of a solid state image sensor and a system using the solid state image sensor.
Conventional video input systems using solid state image sensors have been used for video cameras which record motion video data on tapes, supervisory cameras, still video cameras which record still video data on video floppy disks and digital memory media, industrial cameras, and the like. Most of these systems use area CCD image sensors.
An area CCD image sensor includes a photoelectric converter constituted by a two-dimensional array of photoelectric elements corresponding to pixels. An optical image is formed on this photoelectric converter. Signals converted into charges by the photoelectric converter are sequentially read out as pixel signals by a vertical transfer CCD and a horizontal transfer CCD.
As another solid state image sensor, a MOS type image sensor is available. The MOS type image sensor uses no CCDs for vertical and horizontal transfer. In this sensor, pixels selected by selection lines constituted by aluminum lines are read out through read. lines, like a memory device. The MOS type image sensors were once actually used for video cameras. However, the MOS type image sensors were replaced with CCD image sensors because the MOS type image sensors cause larger noise than the CCD image sensors.
The MOS type image sensor, however, has characteristic features which the CCD image sensor does not have. For example, a CMOS type image sensor is driven by a single drive source unlike the CCD image sensor which is driven by multiple drive sources.
More specifically, to drive the CCD image sensor, a plurality of positive and negative power supply potentials, e.g., +20V, +15V, and −10V, are required. In contrast to this, the MOS type image sensor can be driven by a single power supply of, e.g., +5V; it requires only one power supply potential. The same power supply voltage as that used for other circuits making up an image sensing system, e.g., an amplification circuit and a control circuit, can be used for the MOS type image sensor. The number of power supplies can therefore be decreased.
The power consumption of the MOS type image sensor is also smaller than that of the CCD image sensor.
The MOS type image sensor has another characteristic feature which the CCD image sensor does not have. That is, a logic circuit, an analog circuit, an analog/digital conversion circuit, and the like can be easily formed on the sensor by using a single MOS circuit manufacturing process. It is a well-known fact that peripheral circuits, associated circuits, and the like can be easily formed on the MOS type image sensor. Prototypes of such sensors have been reported at academic meetings (e.g., ISSCC in 1996).
As described above, the MOS type image sensor has characteristic features which the CCD image sensor does not have. To make the most of these characteristic features, however, a circuit structure in the sensor which is suited to a system to be used and an interface for other circuit portions are required. If, for example, an appropriate interface is not used, a large number of pins are required to result in an increase in the chip area of the sensor or the size of the package. An increase in cost cannot therefore be avoided.
Video compression techniques for teleconferences, videophones, and the like have been standardized. With the widespread use of personal computers and communication services for personal computers, a desktop conference using personal computers will soon become a reality. Image compression techniques are also used for this purpose.
A video camera recorder or a portable video camera is used for an image capture section of such a video system. Outputs from these cameras are still analog video outputs. It is as a matter of course that in the future such cameras are connected to personal computers by digital direct coupling or incorporated therein. If a solid state image sensor incorporating a video processing circuit is available as an image sensor used for such purposes, the number of parts can be decreased. A reduction in cost can therefore be attained.
As described above, the MOS type image sensor as a solid state image sensor has many advantages over the CCD image sensor except for noise. With advances in noise suppression techniques, the MOS type image sensor has regained attention. When the MOS type image sensor is to be used as an image sensing device, a pixel selection function, an image compression function, a low speed shot control function, an image data conversion function, and the like may be implemented as MOS circuits on the same chip as that of the MOS type image sensor, in addition to an image sensing function. With this structure, only processing results can be used. As a result, a reduction in load can be attained in terms of design and manufacture of an actual system using the MOS type image sensor to take place of peripheral circuits for the above functions.
If, therefore, a solid state image sensor with video processing circuits is available as an image sensor, the number of parts can be reduced, and a reduction in cost can be attained.
If, however, these video processing circuits are simply implemented on the chip of the MOS type image sensor, a problem is posed in terms of operability when this chip is applied to a system. If, for example, a function is designed on the basis of the specifications required by the user, the resultant device becomes a single-function device. That is, a dedicated device, i.e., a device used for a special purpose, is obtained, resulting in poor versatility.
Considering the social background of an information-oriented society and the popularity of multimedia, an image capture function will be increasingly required in various fields. In addition, with increasing demand in space and energy savings, reductions in the size and power consumption of a function element are required. Under the circumstances, it is urgently necessary to realize a high-performance, high-versatility solid state image sensor using a MOS type image sensor which can meet these demands.
It is an object of the present invention to provide a compact, high-performance solid state image sensor having high general versatility and using a MOS type image sensor capable of energy-saving. It is another object of the present invention to provide a video system using this solid state image sensor.
According to the first aspect of the present invention, there is provided a solid state image sensor comprising: an area sensor section in which pixels for performing photoelectric conversion are arranged two-dimensionally; a pixel selection section for selecting a pixel of the area sensor section and reading out a pixel signal from the pixel; an analog signal processor section for performing signal processing for the pixel signal read out from the pixel; an analog-digital conversion section for converting the processed signal into a digital signal; a digital signal processor section for processing to convert the digital signal into luminance and color difference signals; and an interface section which can externally output the digital video signal, operates in accordance with an external command, and has a function of selecting one of the digital signal from the analog-digital conversion section and luminance and color difference signals, wherein the area sensor section, the pixel selection section, the analog signal processor section, the analog-digital conversion section, the digital signal processor section, and the interface section are mounted on a single chip.
According to the second aspect of the present invention, there is provided a solid state image sensor comprising: an area sensor section in which pixels for performing photoelectric conversion are arranged two-dimensionally; a pixel selection section for selecting a pixel of the area sensor section and reading out a pixel signal from the pixel; an analog signal processor section for performing signal processing for the pixel signal read out from the pixel; an analog-digital conversion section for converting the processed signal into a digital signal; a digital signal processor section for performing motion video processing and still image processing; and an interface section which can externally output the digital video signal, operates in accordance with an external command, and has a function of selecting one of a motion video signal obtained by performing the motion video processing and a still image signal obtained by performing the still image processing, wherein the area sensor section, the pixel selection section, the analog signal processor section, the analog-digital conversion section, the digital signal processor section, and the interface section are mounted on a single chip.
According to the third aspect of the present invention, there is provided a solid state image sensor comprising: an area sensor section in which pixels for performing photoelectric conversion are arranged two-dimensionally; a pixel selection section for selecting a pixel of the area sensor section and reading out a pixel signal from the pixel; an analog signal processor section for performing signal processing for the pixel signal read out from the pixel to output a processed signal; an analog-digital conversion section for converting the processed signal into a digital signal; a digital signal processor section including means for performing signal processing for the digital signal to convert the digital signal into a digital video signal having a predetermined signal format, and storage means for storing the digital video signal; and an interface circuit for externally outputting the digital video signal from the storage means in accordance with an external command, wherein the area sensor section, the pixel selection section, the analog signal processor section, the analog-digital conversion section, the digital signal processor section, and the interface section are mounted on a single chip.
According to the fourth aspect of the present invention, there is provided a solid state image sensor comprising: an area sensor section in which pixels for performing photoelectric conversion are arranged two-dimensionally; a pixel selection section for selecting a pixel of the area sensor section and reading out a pixel signal from the pixel; an analog signal processor section for performing signal processing for the pixel signal read out from the pixel; an analog-digital conversion section for converting the processed signal into a digital signal; a digital signal processor section for performing signal processing to convert the digital signal into a digital video signal having a predetermined signal format; an interface section for externally outputting the digital video signal and inputting an external command; and means capable of changing a charge integration time for at least some of the pixels in accordance with an external command, wherein the area sensor section, the pixel selection section, the analog signal processor section, the analog-digital conversion section, the digital signal processor section, the interface section, and the means are mounted on a single chip.
According to the fifth aspect of the present invention, there is provided a solid state image sensor comprising: an area sensor section in which pixels for performing photoelectric conversion are arranged two-dimensionally; a pixel selection section for selecting a pixel of the area sensor section and reading out a pixel signal from the pixel; an analog signal processor section for performing signal processing for the pixel signal read out from the pixel; an analog-digital conversion section for converting the processed signal into a digital signal; a digital signal processor section for performing signal processing to convert the digital signal into luminance and color difference signals; and an interface section for externally outputting the digital video signal by alternately outputting the luminance and color difference signals, wherein the area sensor section, the pixel selection section, the analog signal processor section, the analog-digital conversion section, the digital signal processor section, and the interface section are mounted on a single chip.
According to the sixth aspect of the present invention, there is provided a solid state image sensor comprising: an area sensor section in which pixels for performing photoelectric conversion are arranged two-dimensionally; a pixel selection section for selecting a pixel of the area sensor section and reading out a pixel signal from the pixel; an analog signal processor section for performing signal processing for the pixel signal read out from the pixel; an analog-digital conversion section for converting the processed signal into a digital signal; a digital signal processor section for performing signal processing to convert the digital signal into a digital video signal having a predetermined signal format; an information section which holds information indicating characteristic of the sensor; and an interface section which externally outputs the digital video signal, can input an external command, and allows the information to be read out in accordance with the external command, wherein the area sensor section, the pixel selection section, the analog signal processor section, the analog-digital conversion section, the digital signal processor section, the information section and the interface section are mounted on a single chip.
According to the seventh aspect of the present invention, there is provided a video system comprising: a solid state image sensor including: an area sensor section in which pixels for performing photoelectric conversion are arranged two-dimensionally, a pixel selection section for selecting a pixel of the area sensor section and reading out a pixel signal from the pixel, a signal processor section for performing signal processing for the pixel signal read out from the pixel and outputting at least one of a digital video signal, an analog video signal, a status signal, and characteristic information of the solid state image sensor, and an interface section which operates in response to an external command and externally outputs at least one of a digital video signal, a status signal, and characteristic information of the solid state image sensor, wherein the area sensor section, the pixel selection section, the signal processor section, and the interface section are mounted on a single chip; and a visual processing unit for performing visual information processing by using at least one of a digital video signal, an analog video signal, a status signal, and characteristic information of said solid state image sensor which are output from said solid state image sensor.
Additional object and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The object and advantages of the invention may be realized and obtained by means of the instrumentalities and combinations particularly pointed out in the appended claims.
The accompanying drawings, which are incorporated in and constitute a part of the specification, illustrate presently preferred embodiments of the invention, and together with the general description given above and the detailed description of the preferred embodiments given below, serve to explain the principles of the invention.
The embodiments of the present invention will be described in detail below with reference to the accompanying drawing.
For example, as the area sensor section 102, a CMOS type image sensor is used. The vertical scanner section 103 performs vertical scanning control on the CMOS type image sensor. The horizontal scanner section 104 performs horizontal scanning control on the CMOS type image sensor. These scanner sections perform predetermined scanning control on the basis of output signals from the timing generator section 101.
It is important that in this embodiment commands can be externally input to the image sensor 100, and the modes, output signal formats, and signal output timings, and the like of the image sensor 100 can be controlled in accordance with the commands. The interface section 108 is used to execute this command input operation. Upon reception of a predetermined command from the outside, the interface section 108 controls the associated constituent elements to perform control corresponding to the received command. The interface section 108 also has the function of outputting digital video data output through the digital signal processor section 107 to the outside of the image sensor 100.
The analog signal processor section 105 performs predetermined signal processing for the video signal read out from the area sensor section 102, and outputs the resultant signal to the A/D converter section 106. The A/D converter section 106 converts this video signal into a digital signal, and outputs it. The digital signal processor section 107 outputs the video data, which has undergone digital conversion and is output from the A/D converter section 106, to the interface section 108.
The timing generator section 101 generates timing signals for reading out pixel signals having undergone photoelectric conversion through the respective pixels on the basis of external signals. The vertical and horizontal scanner sections 103 and 104 read out charges having undergone photoelectric conversion in the respective pixels in accordance with these timing signals.
As an external signal, a master clock signal having a fundamental frequency, a sync signal, or both of them may be used.
Each of
As an external signal, a master clock signal having a fundamental frequency, a sync signal, or both of them may be used. The structure shown in
In the structure shown in
In the structure shown in
The analog signal processor section 105 performs noise reduction, amplification, gamma correction, and clamp processing for a video signal. The resultant signal is then converted into a digital signal by the A/D converter section 106. The digital signal processor section 107 converts the pixel array signal of the digital signal into an output signal suited for external output. For example, as this signal, a luminance signal, an RGB signal, luminance/color-difference signals (YCrCb, YUV), or the like can be conceived.
The respective signals may be output in the order based on the pixel sequential scheme of outputting the signals in units of pixels or the frame sequential scheme of outputting the signal in units of frames. Note that the pixel array signal may be output without signal processing.
In addition, signal processing may be performed on the basis of these signals. For example, still image data compression processing represented by JPEG, video compression processing such as H. 261 or H. 263 for teleconferences, MPEG 1, MPEG 2, or MPEG 4, the standard of which is under deliberation, can be implemented on the basis of these signals. Furthermore, gamma correction may be performed by the digital signal processor section 107 instead of the analog signal processor section 105.
As shown in
Upon reception of an external command, the image sensor 100 of the present invention is set in a mode corresponding to the command input, and can perform processing corresponding to the command. This image sensor is characterized in this point. This characteristic feature will be described in detail below.
An embodiment in which the image sensor has a plurality of output formats, and can change output data by switching/selecting the output format in accordance with command data will be described first.
In the embodiment shown in
In this structure, the digital signal processor section 107 has a path through which pixel data itself is output, and a path through which pixel data is converted into a YCrCb signal by the digital circuit. The digital signal processor section 107 can switch to select one of the paths so as to output data through the path designated upon switching.
The structure shown in
In the case shown in
In the above embodiment, the type of video data to be output can be selected in accordance with a command. Another embodiment in which data can be output in accordance with an external command will be described next.
An image sensor used for a general video camera which outputs video data to a TV monitor. For this reason, when the NTSC scheme is used, the image sensor outputs video data at a rate of 30 frames/second. When such an image sensor is used for a teleconference, a videophone, a desktop conference, or the like, the number of frames output per second is often smaller than 30 owing to a limitation imposed on transmission capacity. For this reason, the image sensor need not always output the currently sensed signal.
Upon reception of an output request from the outside, the image sensor outputs data. While no request is received, unnecessary circuit operations on the image sensor are stopped to reduce the power consumption.
Still another embodiment in which the output frame rates are set stepwise for an image sensor 100 in advance, and these rates are switched in accordance with an external command will be described next.
According to this embodiment, letting M be a rational number, a plurality of set values of M frames/second are prepared. These set values can be switched so that a frame rate suited to specific conditions for the system to be used or the preference of the user can be selected. That is, the set values of M are switched in accordance with a command input to the image sensor 100.
In this case, a timing generator section 101 has the function of implementing a plurality of read methods. The timing generator section 101 can select one of the methods and change the output rate in accordance with the above command. If, for example, a reference frame rate, i.e., N frames/second, and frame rates obtained by multiplying the reference rate by 1/n are set, like “30 frames/second”, “15 frames/second”, “7.5 frames/second”, and 3.75 frames/second”, are set, as shown in
For example, the following methods are available frame rate selection methods.
For example, a method of checking the data transfer rate of a transmission line in a start-up operation, and causing software to select a frame rate is used in a camera 301 using the image sensor 100 of the present invention, as shown in
A structure of the camera 301 in
Assume that the camera 301 connected to the personal computer 300 is the personal computer built-in camera 301a in
Assume that the camera 301 has the structure shown in
For example, the above structure is designed such that the data space occupation in the transmission buffer 307 in
Compact, lightweight, portable terminals such as hand-hold personal computers have recently become popular. For example, in a structure in which a communication means and the image sensor 100 are incorporated into a portable information device, as shown in
In the system shown in
An embodiment in which the pixel output order can be changed or pixels to be read out can be selected in accordance with an external command will be described next.
For example, an image sensor 100 of the present invention uses a CMOS type image sensor as an area sensor. This CMOS type image sensor can be designed to selectively activate horizontal and vertical scanning lines to allow arbitrary pixels to be read out, unlike a CCD image sensor.
In a system for outputting video data to a TV or a personal computer monitor, data are generally read out in units of lines. For example, in a system using data compression by block encoding, frame video data having an n×m pixel configuration are generally processed in units of blocks each consisting of 8×8 pixels or 16×16 pixels. To cope with these read methods, a plurality of read schemes or read schemes and a plurality of corresponding processing circuits may be incorporated into a timing generator section 101, a digital signal processor section 107, or both of them. In this case, the above processing can be easily coped with by switching these schemes in accordance with an external command.
This case will be described next.
For example,
When the timing generator section 101 is designed to select one of the read schemes in this manner, a single image sensor can cope with the above methods.
The image sensor 100 of the present invention can selectively output pixels. Therefore, the image sensor 100 can easily sub-sample at intervals of a predetermined number of pixels or read out only part of an image. These embodiments will be described next.
In a sub-sampling system that sub-samples at intervals of a predetermined number of pixels, a small resolution (the resolution in this case indicates the number of pixels) can be set in the motion video capture mode, a large resolution can be set in the still image capture mode, and the resolution can be changed in accordance with the transmission capacity set in a desktop conference. In this case, it suffices if a timing generator section 101 is designed as shown in
The all-pixels output mode controller 101i generates a timing signal for reading out all pixels on the basis of a clock sync signal. The sub-sampling mode controller 101j generates a timing signal for a read operation in the sub-sampling mode on the basis of a clock sync signal. The switch circuit 101e switches and supplies these timing signals to the vertical scanning signal generator 101a and the horizontal scanning signal generator 101b. The switch circuit 101e selects and extracts one of outputs from the mode controllers 101i and 101j in accordance with the switching command supplied from the interface section 108. Upon reception of an external command, the interface section 108 generates a switching command in accordance with the command, and supplies it to the switch circuit 101e. When an image read operation is to be performed, all pixels are generally read out, as shown in
The embodiment shown in
According to this scheme, for example, green pixels closest to the luminance signal are used to capture a black-and-white image.
An embodiment in which only part of video data is output will be described next. In outputting “only partial video data”, which is the video data of only a partial frame area of a sensed image, motion video data can be efficiently encoded by exclusively outputting a moving portion or a portion to be seen in detail. In this case, as shown in
In this case, the area around the point is a predetermined range centered on the designated point P, as shown in
An embodiment in which the electronic shutter setting in an image sensor 100 can be changed in accordance with an external command will be described next. As shown in
This embodiment will be described in detail below with reference to
In a CCD image sensor, the charge integration times for all pixels are the same. In contrast to this, in the image sensor 100 used in the present invention, when, for example, a CMOS type image sensor is used as an area sensor, since this area sensor reads out video data in units of pixels, lines, or blocks, the starts and ends of the charge integration times differ in units of pixels, lines, or blocks. In this case, video data are read out in units of lines.
Assume that the pixels of each frame are line-sequentially read out, as shown in
When the electronic shutter is to be operated, the effective charge integration interval can be shortened by delaying the pixel reset timing at which ineffective charges are reset, as shown in
In addition, effective charge integration operation setting can be performed in units of lines or blocks in accordance with a command.
By allowing electronic shutter setting in this manner, each object can be image-picked up conveniently. Assume that the object has a light-emitting portion. In this case, if the electronic shutter setting, i.e., the effective charge integration interval, is set in accordance with this light-emitting portion, the remaining portion becomes dark.
If, however, the effective charge integration interval for pixels, lines, or blocks corresponding to the light-emitting portion is set to be shorter than that for the remaining portions, an excellent image can be obtained.
In another embodiment of the above method of switching the modes of the timing generator section 101, a ROM 1011 is arranged in the timing generator section 101, as shown in
The structure of the timing generator section 101 in the image sensor 100 of the present invention has been described above. An embodiment in which an image sensor incorporates a vector detection circuit for detecting the motion vector in motion video data will be described next.
In this embodiment, the image sensor 100 incorporates a video data compression circuit 107q for compressing motion video data, as shown in
The motion vector detection circuit 107r is a circuit for detecting the motion vector in an image. The luminance signal (Y data) generated by the digital signal processor section 107 is input to the motion vector detection circuit 107r to be used for processing. As a luminance signal, an output from a Y color difference signal processing circuit 107p for obtaining Y data and color difference data from the video data output from an A/D converter section 106 is used.
In the image sensor 100 shown in
In a single-plate image sensor, one color filter is generally formed on each pixel (more specifically, each of the cells constituting each pixel), and a plurality of (three or four in general) such color filters are used to obtain a color image.
These color filters are arranged into repetitive patterns in a mosaic or stripe form, as a whole, on the respective cells arranged in the form of a matrix. By selecting one of the colors of the filters, the motion vector can be calculated. This structure simplifies the circuit.
For example, in the image sensor 100 having the area sensor section 102 with a Bayer pattern structure like the one shown in
When the video data compression circuit 400 is externally connected to the image sensor 100, as shown in
When the camera using the image sensor 100 of the present invention is mounted on the above portable information device (see
Referring to
In this case, a digital signal processor section 107 in the image sensor 100 has a structure like the one shown in
Assume that this structure is used for a supervisory camera system. In this case, when motion is detected, the corresponding video data can be recorded on a recording medium, or an alarm can be generated. That is, a useful system can be formed. In addition, when a system is formed by using a personal computer, an interrupt may be generated in the personal computer in accordance with a motion detection signal. As a motion detection signal, a status signal (to be described later) may be output to the outside.
As the effective charge integration interval for a portion in motion is shortened, the image blur decreases. As in this case, when the electronic shutter setting is changed in accordance with the magnitude of the motion vector, the image quality improves.
Assume that no motion detection circuit is arranged in an image sensor 100, but a video data compression circuit including a motion vector detection section is externally connected to the image sensor 100. In this case, the electronic shutter setting of the image sensor 100 may be changed in accordance with this motion vector detection result as a command input.
The structure obtained by adding the motion vector detection circuit to the digital signal processor section 107 of the image sensor 100 of the present invention and its application examples have been described above. An interface section 108 of an image sensor 100 of the present invention will be described next.
This structure requires a large number of signal lines, but allows easy connection to the outside. In addition, the internal structure of the image sensor 100 is not complicated. Video data is output in accordance with an output enable signal generated on the basis of a signal for activating the image sensor 100.
Alternatively, the image sensor may have a temporary storage function so that video data can be output in accordance with a data request from the system side.
In the case shown in
Still another embodiment will be described below with reference to
Assume that an image sensor 100 reads data in units of pixels. In this case, the image sensor may use either a scheme of reading out one pixel of video data by one read operation, and a scheme of reading out one pixel by a plurality of read operations. In the former scheme, for example, an output section 108a has read data pins for luminance signals independently of read data pins for color signals to read out and output luminance signals and color signals independently of each other, as shown in
In the latter scheme, the output section 108a alternately reads out luminance signals and color signals in units of pixels, as shown in
The data bits of one pixel can be read out by a plurality of read operations.
Assume that the video data with a resolution of p bits is to be read out through p signal lines, as shown in
In the above read operation, if bits having larger influences on the circuit on the subsequent stage are preferentially output, the circuit on the subsequent stage can be simplified. For example, such bits include the MSB (Most Significant Bit). As is apparent, when p bits are to be read out by q read operations, the number of signal lines can be reduced to p/q.
Still another embodiment will be described below with reference to
In this embodiment, an image sensor 100 incorporates a circuit for calculating the motion vector. In this case, an output section 108a has input and output terminals respectively used for video data and motion vector data so that motion vector data can be output from the image sensor through signal lines independently of video data.
The image sensor of the embodiment shown in
In the structure in
In the embodiment shown in
With this structure, the state of the image sensor 100 can be checked on the system side using the image sensor 100.
As a means for discriminating input/output of data, a means for writing command data in the image sensor at intervals of video data outputs may be used. For example, as indicated by the timing chart of
According to this structure, while video data is output, a signal indicating the output state is output from the image sensor 100. While no video data is output, command data can be written in the image sensor 100. That is, a system using the image sensor 100 checks a signal indicating the output state, and writes a command in the image sensor 100 while no video data is output.
The image sensor 100 in
In the above embodiment, the image sensor having the basic structure shown in
An example of control including switching of the image sensor output signal formats in accordance with a command will be described referring to the solid state image sensor of
The output modes of this solid state image sensor include a blanking waveform mode having blanking portions and a non-blanking waveform mode having no blanking portion. These waveform modes can be switched in accordance with a command.
In general, blanking portions are required as flyback periods for a scanning beam to output a video signal to a monitor. In addition, when an image is to be captured into a personal computer (to be referred to as a PC hereinafter) through a video capture board with analog input specifications, the input signal must comply with a video signal determined by the capture board. A signal having blanking portions is generally used as such a signal. When, however, the input signal is to be directly input as digital data to the PC, the input signal need not always have blanking periods in which no effective video data are present. In this case, therefore, time can be saved by omitting these blanking periods, leading to an increase in processing speed in subsequent processing.
If a signal having blanking periods and a signal having no blanking period can be switched, the waveforms/formats can be switched in accordance with a system using the image sensor, and no dedicated image sensors are required, resulting in a reduction in cost. Even if the image sensor is to be used in the fixed mode having no blanking period, a conventional measuring instrument for a waveform with blanking periods can be used in a shipment test on the image sensor.
Referring to
In the embodiment shown in
If only an analog video signal output is used, the solid state image sensor shown in
An embodiment in which a sync signal mode and a non-sync signal mode are switched in accordance with a command will be described next.
As shown in
The sync signal mode or the non-sync signal mode may also be set for digital video data corresponding to the structure in
An embodiment in which the gains of the analog amplifier of a solid state image sensor can be switched in accordance with a command will be described next with reference to
In this embodiment, the gains of an analog amplifier 523 in an analog signal processor section 503 are switched in accordance with an external amplifier switching command. More specifically, each of the analog signal processor sections 503 shown in
The analog signal processor section 503 used in the structure shown in
When the analog signal processor section 503 in
An embodiment in which signal processing filters are switched in accordance with a command will be described next.
According to this embodiment, in a command switching structure, a command is used to switch filters used for signal processing in the digital signal processor section 507 in
In this case, two types of filters are used. However, a plurality of types of filters may be used, as shown in
Other filter switching operations may be performed as follows. Filters having the same number of taps but having different coefficients may be switched. A band-limitation filter for general image generation and a filter for special image generation such as contour extraction are switched. A one-dimensional filter, a two-dimensional filter, and a three-dimensional filter may be switched. In addition, a correction filter may be used to correct any pixel defect in the image sensor.
According to the above embodiments of the present invention, there is provided a high-performance image sensor which incorporates peripheral circuits as well as an image sensing function to perform various types of processing for video data, and allows the various types of processing to be executed upon designation using commands.
A video system using a solid state image sensor according to the embodiments described above will be described last with reference to
As described above, the solid state image sensor can output data corresponding to a request from the image system to which the image sensor is applied, contributing to a decrease in the number of parts of the overall video system. In addition, since both an analog video signal output and a digital video data output in the embodiment of
A CMOS sensor which can be applied to the above solid state image sensor will be described next.
Assume that in this structure, a reference voltage is applied to a vertical signal line 8 while the vertical selection transistor 65 is turned off and the reset transistor 66 is turned on. In this case, when electrons flow into the drain of the reset transistor 66 through the gate channel of the reset transistor 66, the drain voltage drops.
When the reset transistor 66 is turned on, since the drain and gate of the reset transistor 66 are electrically connected to each other, the gate voltage drops, and the quantity of incoming electrons decreases. Finally, the reference voltage applied to the source becomes almost equal to the channel potential. In this state, the channel potential becomes equal to the externally applied voltage. No variations arising from the specific structures of transistors used therefore appear.
According to this embodiment, the feedback transistor (reset transistor 66) is inserted between the gate and drain of the amplification transistor 64 to perform a feedback operation so as to apply a constant voltage to the source. With this operation, threshold variations can be corrected.
Vertical address lines 6-1, 6-2, . . . extending horizontally from a vertical address circuit 5 as a component of a vertical scanning circuit section are respectively connected to the unit cells on the respective rows to determine horizontal lines through which signals are to be read out. Similarly, reset lines 7-1, 7-2, . . . extending horizontally from the vertical address circuit 5 are respectively connected to the unit cells on the respective columns.
The unit cells on the respective columns are respectively connected to vertical signal lines 8-1, 8-2, . . . arranged in the column direction. Each of load transistors 9-1, 9-2, . . . is connected to one end of a corresponding one of the vertical signal lines 8-1, 8-2, . . . . The gates and drains of the load transistors 9-1, 9-2, . . . are commonly connected to a drain voltage terminal 20.
The other end of each of the vertical signal lines 8-1, 8-2, . . . is connected to the gate of a corresponding one of MOS transistors 26-1, 26-2, . . . . The sources of the MOS transistors 26-1, 26-2, . . . are respectively connected to the drains of MOS transistors 28-1, 28-2, . . . . The MOS transistors 26-1, 26-2, . . . and 28-1, 28-2, . . . operate as a source follow circuit. The gates of the MOS transistors 28-1, 28-2, . . . are connected to a common gate terminal 36.
Each of the nodes between the MOS transistors 26-1, 26-2, . . . and the MOS transistors 28-1, 28-2, . . . is connected to one end of a corresponding one of clamp capacitances 32-1, 32-2, . . . through a corresponding one of sample/hold transistors 30-1, 30-2, . . . . A corresponding one of sample/hold capacitances 34-1, 34-2, . . . and a corresponding one of clamp transistors 40-1, 40-2, . . . are connected in parallel with the other end of each of the clamp capacitances 32-1, 32-2, . . . The other end of each of the sample/hold capacitances 34-1, 34-2, . . . is grounded. The other end of each of the clamp capacitances 32-1, 32-2, . . . is also connected to a horizontal signal lines 15 through a corresponding one of horizontal selection transistors 12-1, 12-2.
The vertical address circuit 5 is a circuit for shifting a plurality of signals, two signals in this case, together, and is realized by the circuit shown in
The operation of the MOS type solid state image sensor having the above structure will be described next with reference to the timing chart of
When a high-level address pulse is applied to the vertical address line 6-1, the vertical selection transistors 65 of the unit cells P4-1-1, P4-1-2, . . . connected to the vertical address line 6-1 are turned on. As a result, the amplification transistors 64 and the load transistors 9-1, 9-2, . . . constitute a source follower circuit.
The common gate 37 of the sample/hold transistors 30-1, 30-2, . . . is set at high level to turn on the sample/hold transistors 30-1, 30-2, . . . . Thereafter, the common gate 42 of the clamp transistors 40-1, 40-2, . . . is set at high level to turn on the clamp transistors 40-1, 40-2, . . . .
Subsequently, the common gate 42 of the clamp transistors 40-1, 40-2, . . . is set at low level to turn off the clamp transistors 40-1, 40-2, . . . . With this operation, the signal plus noise components appearing on the vertical signal lines 8-1, 8-2, . . . . are accumulated in the clamp capacitances 32-1, 32-2, . . . .
After the vertical address pulse is restored to low level, a reset pulse is applied to the reset line 7-1. As a result, the reset transistors 66 of the unit cells P4-1-1, P4-1-2, . . . connected to the reset line 7-1 are turned on, and the charges at the input terminals of output circuits 68 are reset.
When a high-level address pulse is applied to the vertical address line 6-1 again, the vertical selection transistors 65 of the unit cells P4-1-1, P4-1-2, . . . connected to the vertical address line 6-1 are turned on. As a result, the amplification transistors 64 and the load transistors 9-1, 9-2, . . . constitute a source follower circuit, and only noise components whose signal components are reset appear on the vertical signal lines 8-1, 8-2, . . . .
Since the signal plus noise components are accumulated in the clamp capacitances 32-1, 32-2, . . . , as described above, only voltage changes on the vertical signal lines 8-1, 8-2, . . . , i.e., only signal voltages without fixed pattern noise obtained by subtracting the noise components from the signal component pulse noise components, appear on clamp nodes 41-1, 41-2.
The common gate 37 of the sample/hold transistors 30-1, 30-2, . . . is set at low level to turn off the sample/hold transistors 30-1, 30-2, . . . . As a result, the voltages without noise which are appearing on the clamp nodes 41-1, 41-2, . . . are accumulated in the sample/hold capacitances 34-1, 34-2, . . . .
Horizontal address pulses are sequentially applied to the horizontal selection transistors 12-1, 12-2. As a result, the signals without noise which are output from the photodiodes 62 and accumulated in the sample/hold capacitances 34-1, 34-2, . . . are read out from the output terminal (horizontal signal line) 15.
Subsequently, the above operation is repeated with respect to the vertical address lines 6-1, 6-2, . . . in the same manner as described above, thereby extracting signals from all the cells arranged two-dimensionally.
The sequence of operation based on the timing shown in
“rise of vertical address pulse·rise of sample/hold pulse rise of clamp pulse”→“rise of reset pulse”→“fall of reset pulse”→“fall of sample/hold pulse”→“fall of vertical address pulse” Note that the sequence of the rise of the vertical address pulse, the rise of the sample/hold pulse, and the rise of the clamp pulse can be arbitrarily set. The above sequence is, however, preferable.
As described above, according to the operation shown in
Note that the noise cancelers of this embodiment are connected to the vertical signal lines 8 through the impedance conversion circuits 26 and 28 constituted by source follow circuits. That is, the vertical signal lines are connected to the gates of the transistors 26. Since the capacitances of these gates are very small, the amplification transistors 64 of the cells charge only the vertical signal lines 8-1, 8-2, . . . . For this reason, the time constant of each CR is small, and a steady state is quickly set. Therefore, the reset pulse application timing can be quickened, and noise cancellation can be performed within a short period of time.
A cell matrix CM is addressed by the vertical decoder circuit DV to output pixel signals from the corresponding vertical cells to a noise canceler NC. The noise canceler NC performs noise cancel processing for the pixel signals read out from the cell matrix CM. In this case, when the horizontal address signal is input form the horizontal decoder circuit DH to the noise canceler NC, the video signal having undergone noise cancel processing is output from the CMOS sensor.
Additional advantages and modifications will readily occur to those skilled in the art. Therefore, the invention in its broader aspects is not limited to the specific details and representative embodiments shown and described herein. Accordingly, various modifications may be made without departing from the spirit or scope of the general inventive concept as defined by the appended claims and their equivalent.
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