A solid-state imaging device including a plurality of pixel units configured and disposed in an imaging area in such a way that a plurality of pixels corresponding to different colors are treated as one unit, the amount of shift of a position of each of the pixels in the pixel unit being set as to differ depending on distance from a center of the imaging area to the pixel unit and a color.
|
0. 5. A solid-state imaging device comprising:
a plurality of pixel units disposed in a matrix in an imaging area in such a way that a plurality of pixels corresponding to different colors are treated as one pixel unit; and
a light blocking part provided corresponding to the plurality of pixel units and having apertures corresponding to the pixels in each of the pixel units,
wherein sizes of the apertures of the light blocking part for each of the pixels in each of the pixel units are so set as to differ depending on distances from a center of the imaging area to a center of the respective pixel unit and depending on a color of the respective pixel,
wherein the imaging area includes a first region and a second region,
wherein the first region is closer to a center of the imaging area than the second region,
wherein the plurality of pixels includes a first pixel, a second pixel, a third pixel, and a fourth pixel,
wherein the apertures of the light blocking part include:
a first aperture disposed corresponding to the first pixel of a first color in the first region;
a second aperture disposed corresponding to the second pixel of a second color in the first region;
a third aperture disposed corresponding to the third pixel of the first color in the second region; and
a fourth aperture disposed corresponding to the forth pixel of the second color in the second region,
wherein a size of the first aperture is larger than a size of the third aperture, and
wherein a size of the second aperture is smaller than a size of the fourth aperture.
0. 1. A solid-state imaging device comprising:
a plurality of pixel units disposed in a matrix in an imaging area in such a way that a plurality of pixels corresponding to different colors are treated as one pixel unit; and
a light blocking part provided corresponding to the plurality of pixel units and having apertures corresponding to the pixels in each of the pixel units,
wherein,
the sizes of the apertures of the light blocking part for each of the pixels in each of the pixel units are so set as to differ depending on distances from a center of the imaging area to a center of the respective pixel unit and depending on a color of the respective pixel.
0. 2. The solid-state imaging device according to
3. The solid-state imaging device according to claim 1 5, wherein the pixels are so configured as to capture light from a surface on an opposite side to a surface over which an interconnect layer is formed, of a substrate.
0. 4. The solid-state imaging device according to
0. 6. The solid-state imaging device of claim 5, wherein the first color is blue, and wherein the second color is red.
0. 7. The solid-state imaging device of claim 6,
wherein the plurality of pixels includes a fifth pixel and a sixth pixel,
wherein the apertures of the light blocking part further include:
a fifth aperture disposed corresponding to the fifth pixel of a third color in the first region; and
a sixth aperture disposed corresponding to the sixth pixel of the third color in the second region,
wherein a size of the fifth aperture is a same size as the sixth aperture.
0. 8. The solid-state imaging device of claim 7, wherein the third color is green.
0. 9. The solid-state imaging device of claim 5, further comprising:
a substrate, wherein the pixels are included in the substrate; and
a plurality of color filters adjacent a first surface of the substrate.
0. 10. The solid-state imaging device according to claim 9, further comprising:
an interconnect layer adjacent a second surface of the substrate.
0. 11. The solid-state imaging device of claim 10, further comprising:
an antireflection film, wherein the antireflection film is between the substrate and the color filters.
0. 12. The solid-state imaging device of claim 11, wherein the antireflection film is an HfO film.
0. 13. The solid-state imaging device of claim 12, wherein the antireflection film has a thickness of at least 64 nm.
0. 14. The solid-state imaging device of claim 11, further comprising:
an interlayer insulating film, wherein the interlayer insulating film is between the antireflection film and the color filters.
0. 15. The solid-state imaging device of claim 14, further comprising: a plurality of microlenses, wherein the microlenses are provided on a side of the color filters opposite the substrate.
0. 16. The solid-state imaging device of claim 5, wherein the light blocking part is composed of tungsten.
0. 17. The solid-state imaging device of claim 5, further comprising:
a vertical drive circuit, wherein the vertical drive circuit has a readout scanning system operable to selective scan the pixels.
0. 18. The solid-state imaging device of claim 17, further comprising:
a plurality of column circuits, wherein the column circuits receive signals output from respective pixels.
0. 19. The solid-state imaging device of claim 18, wherein the column circuits execute correlated double sampling of the received signals.
0. 20. The solid-state imaging device of claim 18, wherein the column circuits perform AD conversion.
|
This application is a
(the amount ΔGr of shift of the Gr pixel)
ΔGr=√(Xgr′−Xgr)2+(Ygr′−Ygr)2
(the amount ΔB of shift of the B pixel)
ΔB=√(Xb′−Xb)2+(Yb′−Yb)2
(the amount ΔGb of shift of the Gb pixel)
ΔGb=√(Xgb′−Xgb)2+(Ygb′−Ygb)2
In the solid-state imaging device of the first embodiment, the amount ΔR of shift of the R pixel, the amount ΔGr of shift of the Gr pixel, the amount ΔB of shift of the B pixel, and the amount ΔGb of shift of the Gb pixel are so set as to differ corresponding to the respective colors. Specifically, the amount of shift of the center position of the energy profile dependent on the image height is obtained in advance for each of the colors of red (R), green (G), and blue (B). In matching with these amounts of shift, the values of ΔR, ΔGr, ΔB, and ΔGb are set on a color-by-color basis.
Specifically, the value of ΔR is set in matching with the shift of the center position of the energy profile in red (R) dependent on the image height. The values of ΔGr and ΔGb are set in matching with the shift of the center position of the energy profile in green (G) dependent on the image height. The value of ΔB is set in matching with the shift of the center position of the energy profile in blue (B) dependent on the image height. Thereby, the color shift in each pixel unit 100 is suppressed over the area from the center of the imaging area S to the periphery thereof.
The directions of the movement of the respective pixels 10 based on ΔR, ΔGr, ΔB, and ΔGb are directions toward the position at which the image height is 0%. The values of ΔR, ΔGr, ΔB, and ΔGb can be obtained from functions including the image height as a variable or can be obtained from table data.
In
For four pixels 10 in the pixel unit 100 corresponding to the position at which the image height is 0%, the light reception areas of the respective pixels 10 are shown as follows.
the light reception area of the R pixel 10 . . . Qr
the light reception area of the Gr pixel 10 . . . Qgr
the light reception area of the B pixel 10 . . . Qb
the light reception area of the Gb pixel 10 . . . Qgb
For four pixels 10 in the pixel unit 100 corresponding to the position at which the image height is 100%, the light reception areas of the respective pixels 10 are shown as follows.
the light reception area of the R pixel 10 . . . Qr′
the light reception area of the Gr pixel 10 . . . Qgr′
the light reception area of the B pixel 10 . . . Qb′
the light reception area of the Gb pixel 10 . . . Qgb′
In the solid-state imaging device 1, difference is set in the magnitude of the light reception area of the pixels 10 of the corresponding colors in the pixel unit 100 depending on the image height. This feature is response to the characteristic that the spread of the energy profile changes depending on the image height as shown in
The differences in the magnitude of the light reception area of the pixels 10 of the respective colors in the pixel unit 100 dependent on the image height are as follows.
(the difference ΔQR in the magnitude of the light reception area of the R pixel)
ΔQR=Qr′−Qr
(the difference ΔQGr in the magnitude of the light reception area of the Gr pixel)
ΔQGr=Qgr′−Qgr
(the difference ΔQB in the magnitude of the light reception area of the B pixel)
ΔQB=Qb′−Qb
(the difference ΔQGb in the magnitude of the light reception area of the Gb pixel)
ΔQGb=Qgb′−Qgb
In the solid-state imaging device of the second embodiment, the values of ΔQR, ΔQGr, ΔQB, and ΔQGb are so set as to differ corresponding to the respective colors. Specifically, the change in the spread of the energy profile dependent on the image height is obtained in advance for each of the colors of red (R), green (G), and blue (B). In matching with these changes, the values of ΔQR, ΔQGr, ΔQB, and ΔQGb are set on a color-by-color basis.
Specifically, the value of ΔQR is set in matching with the change in the spread of the energy profile in red (R) dependent on the image height. The values of ΔQGr and ΔQGb are set in matching with the change in the spread of the energy profile in green (G) dependent on the image height. The value of ΔQB is set in matching with the change in the spread of the energy profile in blue (B) dependent on the image height. Thereby, the color shift in each pixel unit 100 is suppressed over the area from the center of the imaging area S to the periphery thereof.
The values of ΔQR, ΔQGr, ΔQB, and ΔQGb can be obtained from functions including the image height as a variable or can be obtained from table data.
In
For four pixels 10 in the pixel unit 100 corresponding to the position at which the image height is 0%, the center positions of the apertures of the light blocking part W for the respective pixels 10 in the xy coordinate system whose origin is the center O of the pixel unit 100 are shown as follows.
the aperture Wr of the light blocking part W for the R pixel 10 . . . (Xwr, Ywr)
the aperture Wgr of the light blocking part W for the Gr pixel 10 . . . (Xwgr, Ywgr)
the aperture Wb of the light blocking part W for the B pixel 10 . . . (Xwb, Ywb)
the aperture Wgb of the light blocking part W for the Gb pixel 10 . . . (Xwgb, Ywgb)
For four pixels 10 in the pixel unit 100 corresponding to the position at which the image height is 100%, the center positions of the apertures of the light blocking part W for the respective pixels 10 in the xy coordinate system whose origin is the center O of the pixel unit 100 are shown as follows.
the aperture Wr of the light blocking part W for the R pixel 10 . . . (Xwr′, Ywr′)
the aperture Wgr of the light blocking part W for the Gr pixel 10 . . . (Xwgr′, Ywgr′)
the aperture Wb of the light blocking part W for the B pixel 10 . . . (Xwb′, Ywb′)
the aperture Wgb of the light blocking part W for the Gb pixel 10 . . . (Xwgb′, Ywgb′)
In the solid-state imaging device 1, the amount of shift is set for the position of the apertures of the light blocking part W for the pixels 10 of the corresponding colors in the pixel unit 100 depending on the image height. This feature is response to the characteristic that the center position of the energy profile is shifted depending on the image height as shown in
The amounts of shift for the pixels 10 of the respective colors in the pixel unit 100 dependent on the image height are as follows.
(the amount ΔWR of shift of the aperture Wr for the R pixel)
ΔWR=√(Xwr′−Xwr)2+(Ywr′−Ywr)2
(the amount ΔWGr of shift of the aperture Wgr for the Gr pixel)
ΔWGr=√(Xwgr′−Xwgr)2+(Ywgr′−Ywgr)2
(the amount ΔWB of shift of the aperture Wb for the B pixel)
ΔWB=√(Xwb′−Xwb)2+(Ywb′−Ywb)2
(the amount ΔWGb of shift of the aperture Wgb for the Gb pixel)
ΔWGb=√(Xwgb′−Xwgb)2+(Ywgb′−Ywgb)2
In the solid-state imaging device of the third embodiment, the above-described ΔWR, ΔWGr, ΔWB, and ΔWGb are so set as to differ corresponding to the respective colors. Specifically, the amount of shift of the center position of the energy profile dependent on the image height is obtained in advance for each of the colors of red (R), green (G), and blue (B). In matching with these amounts of shift, the values of ΔWR, ΔWGr, ΔWB, and ΔWGb are set on a color-by-color basis.
Specifically, the value of ΔWR is set in matching with the shift of the center position of the energy profile in red (R) dependent on the image height. The values of ΔWGr and ΔWGb are set in matching with the shift of the center position of the energy profile in green (G) dependent on the image height. The value of ΔWB is set in matching with the shift of the center position of the energy profile in blue (B) dependent on the image height. Thereby, the color shift in each pixel unit 100 is suppressed over the area from the center of the imaging area S to the periphery thereof.
The directions of the movement of the respective apertures based on ΔWR, ΔWGr, ΔWB, and ΔWGb are directions toward the position at which the image height is 0%. The values of ΔWR, ΔWGr, ΔWB, and ΔWGb can be obtained from functions including the image height as a variable or can be obtained from table data.
In
For four pixels 10 in the pixel unit 100 corresponding to the position at which the image height is 0%, the sizes of the apertures of the light blocking part W for the respective pixels 10 are shown as follows.
the size of the aperture Wr of the light blocking part W for the R pixel 10 . . . Qwr
the size of the aperture Wgr of the light blocking part W for the Gr pixel 10 . . . Qwgr
the size of the aperture Wb of the light blocking part W for the B pixel 10 . . . Qwb
the size of the aperture Wgb of the light blocking part W for the Gb pixel 10 . . . Qwgb
For four pixels 10 in the pixel unit 100 corresponding to the position at which the image height is 100%, the sizes of the apertures of the light blocking part W for the respective pixels 10 are shown as follows.
the size of the aperture Wr of the light blocking part W for the R pixel 10 . . . Qwr′
the size of the aperture Wgr of the light blocking part W for the Gr pixel 10 . . . Qwgr′
the size of the aperture Wb of the light blocking part W for the B pixel 10 . . . Qwb′
the size of the aperture Wgb of the light blocking part W for the Gb pixel 10 . . . Qwgb′
In the solid-state imaging device 1, difference is set in the size of the apertures of the light blocking part W for the pixels 10 of the corresponding colors in the pixel unit 100 depending on the image height. This feature is response to the characteristic that the spread of the energy profile changes depending on the image height as shown in
The differences in the size of the aperture of the light blocking part W for the pixels 10 of the respective colors in the pixel unit 100 dependent on the image height are as follows.
(the difference ΔQWR in the size of the aperture Wr for the R pixel)
ΔQWR=Qwr′−Qwr
(the difference ΔQWGr in the size of the aperture Wgr for the Gr pixel)
ΔQWGr=Qwgr′−Qwgr
(the difference ΔQWB in the size of the aperture Wb for the B pixel)
ΔQWB=Qwb′−Qwb
(the difference ΔQWGb in the size of the aperture Wgb for the Gb pixel)
ΔQWGb=Qwgb′−Qwgb
In the solid-state imaging device of the fourth embodiment, the values of ΔQWR, ΔQWGr, ΔQWB, and ΔQWGb are so set as to differ corresponding to the respective colors. Specifically, the change in the spread of the energy profile dependent on the image height is obtained in advance for each of the colors of red (R), green (G), and blue (B). In matching with these changes, the values of ΔQWR, ΔQWGr, ΔQWB, and ΔQWGb are set on a color-by-color basis.
Specifically, the value of ΔQWR is set in matching with the change in the spread of the energy profile in red (R) dependent on the image height. The values of ΔQWGr and ΔQWGb are set in matching with the change in the spread of the energy profile in green (G) dependent on the image height. The value of ΔQWB is set in matching with the change in the spread of the energy profile in blue (B) dependent on the image height. Thereby, the color shift in each pixel unit 100 is suppressed over the area from the center of the imaging area S to the periphery thereof.
The values of ΔQWR, ΔQWGr, ΔQWB, and ΔQWGb can be obtained from functions including the image height as a variable or can be obtained from table data.
The above-described first to fourth embodiments may be each independently employed and may be employed in appropriate combination. Specifically, the setting of the positions of the pixels according to the first embodiment may be combined with the setting of the positions of the apertures of the light blocking part for the pixels according to the third embodiment. Furthermore, the setting of the positions of the pixels according to the first embodiment may be combined with the setting of the sizes of the apertures of the light blocking part for the pixels according to the fourth embodiment. In addition, the setting of the light reception areas of the pixels according to the second embodiment may be combined with the setting of the positions of the apertures of the light blocking part for the pixels according to the third embodiment.
In the case in which the embodiment is not employed, shown in
The lens group 91 captures incident light (image light) from a subject and forms the image on the imaging plane of the solid-state imaging device 92. The solid-state imaging device 92 converts the amount of light of the incident light from which the image is formed on the imaging plane by the lens group 91 into an electric signal on a pixel-by-pixel basis, and outputs the electric signal as a pixel signal. As this solid-state imaging device 92, the solid-state imaging device of any of the above-described embodiments is used.
The display device 95 is formed of a panel display device such as a liquid crystal display device or an organic electro luminescence (EL) display device, and displays a moving image or a still image obtained by the imaging by the solid-state imaging device 92. The recording device 96 records a moving image or a still image obtained by the imaging by the solid-state imaging device 92 in a recording medium such as a nonvolatile memory, a video tape, or a digital versatile disk (DVD).
The operating system 97 issues an operation command about various functions of the present imaging apparatus under operation by a user. The power supply system 98 appropriately supplies various kinds of power serving as the operating power for the DSP circuit 93, the frame memory 94, the display device 95, the recording device 96, and the operating system 97 to these supply targets.
Such imaging apparatus 90 is applied to a camera module for mobile apparatus such as a video camcorder, a digital still camera, and a cellular phone. By using the solid-state imaging device according to any of the above-described embodiments as this solid-state imaging device 92, imaging apparatus excellent in the color balance can be provided.
It should be understood by those skilled in the art that various modifications, combinations, sub-combinations and alterations may occur depending on design requirements and other factor in so far as they are within the scope of the appended claims or the equivalents thereof.
Patent | Priority | Assignee | Title |
Patent | Priority | Assignee | Title |
6829008, | Aug 20 1998 | Canon Kabushiki Kaisha | Solid-state image sensing apparatus, control method therefor, image sensing apparatus, basic layout of photoelectric conversion cell, and storage medium |
20020025164, | |||
20040141087, | |||
20040145665, | |||
20040159774, | |||
20040196563, | |||
20040239784, | |||
20050062863, | |||
20050133879, | |||
20050190453, | |||
20050225654, | |||
20050230597, | |||
20050253943, | |||
20060006488, | |||
20070087275, | |||
20070210398, | |||
20080211939, | |||
20080257998, | |||
20090027541, | |||
20100097491, | |||
20100253819, | |||
EP1912434, | |||
JP2000036587, | |||
JP2001160973, | |||
JP2006269923, | |||
JP2007288107, | |||
JP2008078258, | |||
JP2009164385, | |||
JP62042449, | |||
JP63042449, | |||
KR1020080031796, | |||
WO128224, |
Executed on | Assignor | Assignee | Conveyance | Frame | Reel | Doc |
Jul 22 2015 | Sony Corporation | (assignment on the face of the patent) | / |
Date | Maintenance Fee Events |
Sep 24 2020 | M1552: Payment of Maintenance Fee, 8th Year, Large Entity. |
Dec 21 2024 | M1553: Payment of Maintenance Fee, 12th Year, Large Entity. |
Date | Maintenance Schedule |
Mar 27 2021 | 4 years fee payment window open |
Sep 27 2021 | 6 months grace period start (w surcharge) |
Mar 27 2022 | patent expiry (for year 4) |
Mar 27 2024 | 2 years to revive unintentionally abandoned end. (for year 4) |
Mar 27 2025 | 8 years fee payment window open |
Sep 27 2025 | 6 months grace period start (w surcharge) |
Mar 27 2026 | patent expiry (for year 8) |
Mar 27 2028 | 2 years to revive unintentionally abandoned end. (for year 8) |
Mar 27 2029 | 12 years fee payment window open |
Sep 27 2029 | 6 months grace period start (w surcharge) |
Mar 27 2030 | patent expiry (for year 12) |
Mar 27 2032 | 2 years to revive unintentionally abandoned end. (for year 12) |