For irradiating a layer a radiation beam is directed and focussed to a spot on the layer, relative movement of the layer relative to the lens is caused so that, successively, different portions of the layer are irradiated and an interspace between a surface of the lens nearest to the layer is maintained. Furthermore, at least a portion of the interspace through which the radiation irradiates the spot on the layer is maintained filled with a liquid, the liquid being supplied via a supply conduit. At least a portion of the liquid fills up a recess through which the radiation irradiates the spot.
|
0. 21. A structure for a lithography apparatus comprising a movable wafer support table configured to support a wafer, and an optical element, nearest to the wafer support table, configured to pass a radiation beam from a reticle or mask to the wafer, the structure configured for being located adjacent the optical element, configured to receive a liquid and configured to maintain an interspace between a bottom surface of the optical element and the wafer support table and through which the radiation beam irradiates the wafer, filled with the liquid, the structure comprising:
an internal surface bounding at least a portion of the interspace between the bottom surface of the optical element and the wafer support table,
a wall between the wafer and the surface of the optical element, wherein the interspace is bounded at least in part by the wall and by the surface of the optical element, wherein the wall comprises an essentially plane parallel plate arranged to extend essentially perpendicularly to an optical axis, through the interspace, of the radiation beam,
a passage formed in the wall, the passage arranged to allow the radiation beam and liquid to pass therethrough out onto the wafer, and
a port configured to fill the interspace with the liquid, wherein the port is located inside the structure.
0. 28. A structure for a lithography apparatus comprising a movable wafer support table configured to support a wafer, and an optical element, nearest to the wafer support table, configured to pass a radiation beam from a reticle or mask to the wafer, the structure configured for being located adjacent the optical element, configured to receive a liquid and configured to maintain an interspace between a surface of the optical element and the wafer support table and through which the radiation beam irradiates the wafer, filled with the liquid, the structure comprising:
an internal surface to bound at least a portion of the interspace between the surface of the optical element and the wafer support table,
a wall configured to be between the wafer and the surface of the optical element, wherein the interspace is bounded at least in part by the wall and by the surface of the optical element, wherein the wall is arranged to have a surface nearest the wafer when supported by the wafer support table that is essentially perpendicular to an optical axis, through the interspace, of the radiation beam,
a passage formed in the wall, the passage arranged to allow the radiation beam and liquid to pass therethrough out onto the wafer, and
a port configured to fill the interspace with the liquid, wherein the port is located inside the structure.
0. 14. A structure for a lithography apparatus comprising a movable wafer support table configured to support a wafer, and an optical element, nearest to the wafer support table, configured to pass a radiation beam from a reticle or mask to the wafer, the structure configured for being located adjacent the optical element, configured to receive a liquid and configured to maintain an interspace between a bottom surface of the optical element and the wafer support table and through which the radiation beam irradiates the wafer, filled with the liquid, the structure comprising:
an internal surface to bound at least a portion of the interspace between the bottom surface of the optical element and the wafer support table,
a wall configured to be between the wafer and the surface of the optical element, wherein the interspace is bounded at least in part by the wall and by the surface of the optical element, wherein the wall is arranged to extend essentially perpendicularly to an optical axis, through the interspace, of the radiation beam and has its width in a horizontal direction larger than its height in a vertical direction,
a passage formed in the wall, the passage arranged to allow the radiation beam and liquid to pass therethrough out onto the wafer, and
a port configured to fill the interspace with the liquid, wherein the port is located inside the structure.
0. 1. A method of irradiating a layer including:
directing and focussing a radiation beam to a spot on said layer by means of at least one optical element;
causing relative movement of the layer relative to said at least one optical element so that, successively, different portions of the layer are irradiated and an interspace between a surface of said at least one optical element nearest to said layer is maintained; and
maintaining said interspace through which said radiation irradiates said spot on said layer filled with a liquid, the liquid being supplied via a supply conduit;
characterized in that at least a portion of said interspace is bounded by a recess which is filled by at least a portion of said liquid, said radiation beam passing through said liquid in said recess when irradiating said spot, wherein said recess is bounded by a passage in a wall between said layer and a surface of said at least one optical element nearest to said layer and by said at least one optical element nearest to said layer, said radiation beam passing through said passage.
0. 2. The method as claimed in
0. 3. The method as claimed in
0. 4. A The method as claimed in
0. 5. A The method as claimed in
0. 6. A The method as claimed in
0. 7. A method of irradiating a layer including:
directing and focusing a radiation beam to spot on said layer by means of at least one optical element;
causing relative movement of the layer relative to said at least one optical element so that, successively, different portions of the layer are irradiated and an interspace between a surface of said at least one optical element nearest to said layer is maintained; and
maintaining at least a portion of said interspace through which said radiation irradiates said spot on said layer filled with a liquid, the liquid being supplied via a supply conduit;
characterized in that at least a portion of said liquid fills up a recess through which said radiation irradiates said spot,
wherein said interspace between said layer and said surface of said at least one optical element nearest to said layer has a thickness H, the layer and the at least one optical element are moved relative to each other at a velocity V, the liquid is supplied via an outflow opening having a width W measured in a plane parallel to said layer and at a flow rate equal to 0.5*⋅*H*(W+⋅*H)*V, where ⋅ is a constant between 1 and 10 and ⋅ is a constant between 1 and 3.
0. 8. A device for directing radiation to a layer including:
at least one optical element for focussing radiation originating from said radiation source to a spot on said layer;
a displacement structure for causing relative movement of the layer relative to said at least one optical element so that, successively, different portions of the layer are irradiated and an interspace between said layer and a surface of said at least one optical element nearest to said spot is maintained; and
an outflow opening for supplying liquid to fill said interspace, in operation, said radiation irradiates said spot on said layer through said liquid,
characterized in that said device further comprises a recess having an internal surface bounding at least said portion of said interspace through which said radiation irradiates said spot, said outflow opening being formed in said recess, wherein said recess is bounded by a passage in a wall between said spot and a surface of said at least one optical element nearest to said spot and by said surface of said at least one optical element nearest to said spot, said passage forming said outflow opening.
0. 9. The device as claimed in
0. 10. The device as claimed in
0. 11. The device as claimed in
0. 12. The device as claimed in
0. 13. The device claimed in
0. 15. The structure of claim 14, wherein the wall is configured to extend at least partly underneath the surface of the optical element.
0. 16. The structure of claim 14, further comprising a channel configured to be located at least partly below the surface of the optical element, the channel configured to direct a flow of the liquid in a direction essentially perpendicular to the optical axis.
0. 17. The structure of claim 16, wherein parts of the channel are arranged to be located on opposite sides of the optical axis.
0. 18. The structure of claim 14, wherein a cross-sectional dimension of the passage is arranged to be smaller than a cross-sectional dimension of the optical element.
0. 19. The structure of claim 14, wherein the wall is arranged to intersect at an angle a further wall at a location below the surface of the optical element.
0. 20. The structure of claim 14, wherein the structure has its width in a horizontal direction larger than its height in a vertical direction.
0. 22. The structure of claim 21, wherein the wall is configured to extend at least partly underneath the surface of the optical element.
0. 23. The structure of claim 21, further comprising a channel configured to be located at least partly below the surface of the optical element, the channel configured to direct a flow of the liquid in a direction essentially perpendicular to the optical axis.
0. 24. The structure of claim 21, wherein a cross-sectional dimension of the passage is arranged to be smaller than a cross-sectional dimension of the optical element.
0. 25. The structure of claim 21, wherein the wall has its width in a horizontal direction larger than its height in a vertical direction.
0. 26. The structure of claim 21, wherein the wall is arranged to intersect at an angle a further wall at a location below the surface of the optical element.
0. 27. The structure of claim 21, wherein the structure has its width in a horizontal direction larger than its height in a vertical direction.
0. 29. The structure of claim 28, wherein the wall is configured to extend at least partly underneath the surface of the optical element.
0. 30. The structure of claim 28, further comprising a channel configured to be located at least partly below the surface of the optical element, the channel configured to direct a flow of the liquid in a direction essentially perpendicular to the optical axis.
0. 31. The structure of claim 28, wherein a cross-sectional dimension of the passage is arranged to be smaller than a cross-sectional dimension of the optical element.
0. 32. The structure of claim 28, wherein the wall has its width in a horizontal direction larger than its height in a vertical direction.
0. 33. The structure of claim 28, wherein the structure has its width in a horizontal direction larger than its height in a vertical direction.
|
, a passage 90 is provided in the wall 65, which faces the layer 5. The wall 65 containing the passage 90 and the surface 63 of the lens 59 nearest to the layer 5 form a recess 92, inclusive of the passage 90, in the surface of the wall 65 facing the spot 11 to which the radiation 7 is directed. The surface 63 of the lens 59 nearest to the layer 5 is part of the internal surface of the recess 92 and bounds the portion of the interspace 53 through which the radiation 7 irradiates the spot 11. According to the present example, the surface 63 of the lens 59 nearest to the layer 5 is flat, however, this surface may also be concave or convex.
In the carrier 61, a liquid supply 67 has a port 69 that opens into the recess 92 directly adjacent the lens 59 nearest to the layer 5. In operation, the portion of the interspace 53 through which the radiation 7 irradiates the spot 11 on the layer 5 is maintained filled with liquid 91. To this end, the liquid 91 is supplied via the port 69 into a portion of the interspace 53 in the recess 92 and through which the radiation 7 irradiates the spot 11. Via a most downstream outflow opening, formed by the passage 90 in the wall 65 between the spot 11 and the surface 63 of the lens 59, the liquid 91 is subsequently also fed to and fills up a portion of the interspace 53 between the wall 65 and the layer 5. In the recess 92, the liquid 91 is, at least to an important extent, protected against being entrained from the interspace 53. Since, the liquid 91 is less susceptible to being entrained away from the portion of the interspace 53 through which the radiation passes to the spot 11, occurrence of the associated optical distortion caused by the portion of the interspace 53 through which the radiation passes not being completely filled with liquid is thus counteracted.
Moreover, the size of the interspace 53 measured parallel to the optical axis of the lenses 55, 59—and thus the distance between the lens 59 and the layer 5—can be relatively large without causing the liquid to be entrained along with movement of the layer 5 too easily. In turn, this reduces the risk of damage to the lens 59 nearest to the layer 5. Moreover, the allowable tolerances on the tilt of the lens can be larger without increasing the risk of the lens 59 touching the layer 5.
The recess 92 may be positioned and of such dimensions, so that only a portion of the radiation passes through the recess. However, for a particularly effective protection of liquid 91 across the whole radiation beam, it is preferred that the recess 92 has a rim portion 93 closest to the layer 5, which extends around the radiation 7 irradiating the spot 11. Accordingly, the portion of the interspace 53 in the recess 92 in which liquid 91 is shielded from being entrained extends throughout the whole cross-section of the radiation beam 7.
According to the present example, the recess 92 is bounded by the passage 90 in the wall 65 containing the passage 90 between the spot 11 and the lens 59 nearest to the spot 11, and by the surface 63 of the lens 59. The surface 63 of the lens 59 nearest to the spot 11 is thereby shield by the wall 65, so that the risk of damage to the lens 59 is virtually eliminated. Moreover, since the wall 65 also shields the liquid 91, the nearest lens 59 does not need to be positioned very near to the layer 5 to effectively keep the interspace 53 between the layer 5 and the nearest lens 59 filled with liquid. The distance between the wall 65 and the layer 5 can be selected to be quite small so that a very effective capillary effect can be achieved for keeping a liquid film in place in the portion of the interspace 53 in the periphery of the passage 90, because inadvertent contact between the wall 65 and the layer 5 has far less detrimental effects than contact between an optical surface such as a lens surface and the layer 5. The wall 65 is preferably made of or covered with a relatively soft material, such as plastic material, so that there is little risk of damage in the event of inadvertent contact between the wall 65 and the layer 5.
The optimum working distance between the layer 5 and the wall 65, i.e. the portion of the lens assembly nearest to the layer 5, is determined by two factors. On the one hand, the distance should be large enough to retain sufficient tolerance on the distance between the substrate 3 and arrangement of the lenses 55, 59 and the housing 61. On the other hand, this distance should not be too large because this would require a too large liquid flow to maintain the immersed condition of the portion of the interspace 53 through which the radiation passes to the spot 11. A presently preferred range for the smallest thickness of the interspace 53 is 3-1500 μm and more preferably 3-500 μm if the liquid is water, larger values for the smallest thickness of the interspace can be particularly advantageous if the liquid has a larger viscosity than water. Also the width of the outflow opening affects the upper end of the preferred range for the smallest thickness of the interspace, the smallest thickness of the interspace being preferably smaller than (100+½*W) μm in which W is the overall width of the outflow opening measured in a plane parallel to the layer 5.
Due to the presence of a recess facing the layer 5, the distance between the layer 5 and the nearest optical surface may be larger than approximately 10 μm, for instance larger than 15 m, 30 μm or even 100 μm, to increase the insensitivity to tolerances and to further reduce the risk of contact between the layer and an optical surface.
In the device 25 according to the present example, the liquid supply structure 67 communicates with the passage 90 for maintaining a liquid outflow via the passage 90.
Since the liquid 91 flows out towards the layer 5 via the passage 90 in the wall 65 between the lens 59 and the layer S through which also the radiation 7 passes to the spot 11, the liquid 91 is particularly effectively guided through the interspace 53 through which the radiation passes to the spot 11. Moreover, since the radiation 7 passes to the spot 11 through the outflow opening 90 through which the liquid 91 is directed, the radiation beam 7 extends through the area through which the liquid 91 flows out. This results in a very reliable full immersion of the portion of the interspace 53 through which the radiation passes to the spot during movement parallel to the layer 5 of the lens 59 and the layer 5 relative to each other. Yet another advantage of causing the liquid to flow out via an opening through which also the radiation for irradiating the spot is passed is that a relatively high pressure can be maintained in the immersed area through which the radiation passes. This in turn reduces the risk of bubble formation, which may for instance be caused by gasses dissolved in the liquid under influence of an increase of temperature.
To avoid inclusion of air bubbles in the liquid and for reliably maintaining the filled condition of the portion of the interspace 53 through which the radiation 7 passes to the spot 11, liquid outflow via the outflow opening 90 is preferably such that a liquid volume between the wall 65 and the layer 5 is maintained which includes a liquid volume upstream of the portion of the interspace 53 through which the radiation irradiates the spot 11. Thus, a safety margin of liquid upstream (in a direction opposite to the direction of relative movement of the layer 5 in the area of the spot 11) is formed which ensures that, variations in the distance over which liquid is urged in upstream direction do not cause a disruption of the completely filled condition of the portion of the interspace 53 intersected by the radiation 7 passing to the spot 11.
Furthermore, the liquid 91 flows out from the most downstream outflow opening 90 over a cross-section larger than the largest cross section 94 of the portion of the interspace 53 through which the radiation irradiates the spot 11. This also contributes to the reliable immersion of the interspace 53 with the liquid 91.
As can be seen in
According to the present example, the portion of the interspace 53 through which the radiation 7 irradiates the spot 11 is also centrally located relative to the outflow opening 90 to such an extent that the trace 95 of liquid 91 fed from the outflow opening 90 into the interspace 53 completely immerses the portion of the interspace 53 through which the radiation 7 irradiates the spot 11, not only while, in the position of the spot 11, the layer 5 and the at least one lens system 9 move relative to each other in the direction indicated by the arrow 52 (which indicates the direction of movement of the layer 5 relative to the lens system 9), but also while, in the position of the spot 11, the layer 5 and lens system 9 move relative to each other in opposite direction.
More specifically, because in the example shown in
The more the direction of movement of the layer 5 and the lens system 9 parallel to the layer 5 in the area of the spot 11 can be changed without disrupting the immersion of the portion 94 of the area 53 through which the radiation passes, the more the device is suitable for applications in which the spot 11 needs to move over the surface of the layer in widely varying directions, such as in imaging processes in which the spot is a two-dimensional image projected to the layer 5. In such applications, the advantage of a comparatively large refractive index between the lens system and the medium between the lens system and the irradiated surface is that the image can be projected with a higher resolution, which in turn allows further miniaturization and/or an improved reliability.
An example of such applications is optical projection lithography for the processing of wafers for the manufacture of semiconductor devices. An apparatus and a method for this purpose are schematically illustrated in
The projection lithography apparatus according to
Usually one of two principles of operation are applied in optical lithography. In the so-called wafer stepper mode, the projector projects a complete image of the reticle onto one of the areas 16 on the wafer 15. When the required exposure time has been reached, the light beam is switched off or obscured and the wafer 15 is moved by the spindle drives 21, 22 until a next area 16 of the wafer is in the required position in front of the lens assembly 14. Dependent on the relative positions of the exposed area and the next area to be exposed, this may involve relatively quick movement of the lens assembly 14 along the surface of the wafer in widely varying directions. The size of the irradiated spot on the surface of the wafer in which the image of the reticle is projected is typically about 20×20 mm, but larger and smaller spots are conceivable.
In particular when it is desired to manufacture larger semiconductor units, it is advantageous to project the image in the other mode, generally referred to as the wafer scanner mode. In that mode, only a slit-shaped portion of the reticle is projected as a slit shaped spot having a length that is several (for instance four or more times) times larger than its width in an area 16 of the surface of the wafer 15. A typical size for the spot is for instance about 30×5 mm). Then, the reticle 17 to be scanned is moved along scanning window while the wafer support 12 is synchronously moved relative to the lens assembly 14 under control of the control unit 23 with a velocity adapted so that only the projection spot, but not the scanned partial image portions of the reticle 17 that are projected on the wafer move relative to the wafer 15. Thus, the image of the reticle 17 is transferred to an area 16 of the wafer. The movement of the wafer 15 relative to the lens assembly 14 while a running window portion of the reticle is projected onto the wafer 15 is usually carried out slowly and usually each time in the same direction. After the complete image of a reticle 17 has been projected onto the wafer 15, the wafer 15 is generally moved much more quickly relative to the lens assembly 14 to bring a next area of the wafer 15 where a next image of the or a reticle 17 is to be projected in front of the lens assembly 14. This movement is carried out in widely varying directions dependent on the relative positions of the exposed area 16 of the wafer 15 and the next area 16 of the wafer 15 to be exposed. To be able to recommence radiating the surface of the wafer 15 after the displacement of the wafer 15 relative to the lens 14 (i.e. also the lens or the lens and the wafer may be moved), it is advantageous if the liquid volume in the interspace between the lens 14 and the surface of the wafer 15 through which the radiation passes is immediately filled with liquid after completion of that movement, so that the space is reliably immersed before irradiation is recommenced.
Also for optical lithography, water can be used, for instance if the radiation is light of a wavelength of 193 nm. However in some circumstances other liquids may be more suitable.
In
For supplying liquid 191 to the interspace 153 between the lens 159 and the layer 5, a liquid supply conduit 167 extends through the housing 161 and leads to an outflow opening 190. According to the present example, the outflow opening 190 has the form of a canal structure in a surface 154 facing the layer 5. The canal structure 190 is open towards the layer 5, for distributing supplied liquid 191 longitudinally along the canal 190 and dispensing distributed liquid towards the layer 5. In operation, the liquid 191 is distributed by the canal structure 190 longitudinally along that canal structure and liquid 191 is dispensed from the canal structure 190 towards the layer 5. This results in a relatively wide, flat liquid trace 195 and full immersion of the portion 194 of the interspace 153 through which the radiation beam 107 passes, even if the direction of movement of the lens system 109 and the layer 5 relative to each other parallel to the plane of the layer 5 is changed substantially.
The canal 190 can have various forms. In the embodiment shown in FIGS, 4 and 5, the canal is formed such that the outflow opening 190 is located outside the radiation beam 107 and extends around the portion 194 of the interspace 153 through which the radiation 7 irradiates the spot 11. The cross 196 indicates the centre, seen in a direction parallel to the optical axis of the lens system 109, of the total cross-sectional passage area of the outflow opening 190. Also in this embodiment, seen in a direction parallel to the optical axis of the lens system 109, the centre of the total cross-sectional passage area of the outflow opening 190 is located inside the portion 194 of the interspace 153 through which the radiation 107 irradiates the spot 11. Furthermore, as in the embodiment discussed above, the portion 194 of the interspace 153 through which the radiation 107 irradiates the spot 11 is centrally located relative to the cross-sectional area of the outflow opening 190 to such an extent that the direction of movement of the lens system 9 and the layer 5, relative to each other and parallel to the plane of the layer 5, can be reversed without disrupting the full immersion of the portion 194 of the interspace 153 through which the radiation beam 107 passes.
Another feature the outflow opening 190 of the example shown in
The liquid 191 is preferably supplied at a pressure drop over the liquid between the canal structure 190 and the environment that is just sufficient to keep portion of the interspace 153 through which the radiation passes reliably immersed. Thus, the amount of water fed to the surface is kept to a minimum.
Furthermore, when the liquid 191 is dispensed via a canal shaped outflow opening 190, the smallest thickness of the interspace 153 (in this example the distance between the layer 5 and the surface 154 of the wall portion 165) may be larger, without causing an undue risk of disrupting the immersion of the portion 194 of the interspace through which the radiation passes.
The flow rate with which the liquid 191 is supplied is preferably as follows: if the interspace 153 between layer 5 and the surface of the lens system 109 nearest to the layer 5 has a smallest thickness H (measured perpendicular to the layer 5), the layer 5 and the at least one lens 159 are moved relative to each other at a velocity V, the liquid 191 is supplied via an outflow opening 190 having a diameter D measured in a plane parallel to the layer 5, the flow rate is preferably equal to 0.5*β*H*(D+α*H)*V, where α is a constant between 1 and 10 and β is a constant between 1 and 3.
Thus, it can be reliably ensured that a laminar flow with an essentially linear velocity profile and preferably a homogeneous Couette flow is present in the interspace 153. Such a flow exerts a substantially constant force on the wall 165 in which the canal 190 is provided and on the side 163 of the lens 159 nearest to the layer 5. As a result, the water present in the interspace 153 exerts substantially no variable liquid forces on the lens system 109. Such varying liquid forces would lead to undesirable vibrations of the lens system 109 and hence to focusing errors and positioning errors of the radiation beam 107 on the photosensitive layer 5. The flow is preferably free of air inclusions, so that the radiation beam 107 is not disturbed thereby.
In
As in the example shown in
The lens system 309 shown in
Also in the lens system 309 according to this example, seen in a direction parallel to the optical axis of the lens system 309, the centre 396 of the total cross-sectional passage area of the outflow openings 390, 390′ is located inside the portion 394 of the interspace 353 through which the radiation passes to the spot 11.
A particular advantage of having a plurality of outflow openings circumferentially spaced around the portion 394 of the interspace through which the radiation passes to the spot on the layer to be irradiated is, that dependent of the direction of movement of the layer and the lens system 309 relative to each other, liquid can be fed selectively from the outflow opening or openings upstream of the spot on the layer to be irradiated only. Thus, the flow rate of the liquid can be limited and the amount of liquid that needs to be picked up is reduced.
Van Santen, Helmar, Neijzen, Jacobus Hermanus Maria
Patent | Priority | Assignee | Title |
Patent | Priority | Assignee | Title |
3648587, | |||
4480910, | Mar 18 1981 | Hitachi, Ltd. | Pattern forming apparatus |
4704348, | Apr 24 1981 | Hitachi, Ltd.; Veb Carl Zeiss Jena. DDR. | Exposure of uniform fine pattern on photoresist |
5121256, | Mar 14 1991 | The Board of Trustees of the Leland Stanford Junior University | Lithography system employing a solid immersion lens |
5610683, | Nov 27 1992 | Canon Kabushiki Kaisha | Immersion type projection exposure apparatus |
5825043, | Oct 07 1996 | NIKON PRECISION INC | Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus |
6000996, | Feb 03 1997 | SCREEN HOLDINGS CO , LTD | Grinding process monitoring system and grinding process monitoring method |
6104687, | Aug 26 1996 | Digital Papyrus Corporation | Method and apparatus for coupling an optical lens to a disk through a coupling medium having a relatively high index of refraction |
6191429, | Oct 09 1996 | Nikon Precision Inc. | Projection exposure apparatus and method with workpiece area detection |
6649093, | Aug 08 2000 | Koninklijke Philips Electronics N.V. | Method of manufacturing an optically scannable information carrier |
6788477, | Oct 22 2002 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus for method for immersion lithography |
6867844, | Jun 19 2003 | ASML Holding N.V. | Immersion photolithography system and method using microchannel nozzles |
6952253, | Nov 12 2002 | ASML NETHERLANDS, B V | Lithographic apparatus and device manufacturing method |
6954256, | Oct 31 2003 | ASML NETHERLANDS B V | Gradient immersion lithography |
6970228, | Jul 16 1999 | Nikon Corporation | Exposure method and system |
7009682, | Nov 18 2002 | ASML NETHERLANDS B V | Lithographic apparatus and device manufacturing method |
7061578, | Aug 11 2003 | GLOBALFOUNDRIES U S INC | Method and apparatus for monitoring and controlling imaging in immersion lithography systems |
7075616, | Nov 12 2002 | ASML NETHERLANDS B V | Lithographic apparatus and device manufacturing method |
7081943, | Nov 12 2002 | ASML NETHERLANDS B V | Lithographic apparatus and device manufacturing method |
7193232, | Nov 12 2002 | ASML NETHERLANDS B V | Lithographic apparatus and device manufacturing method with substrate measurement not through liquid |
7199858, | Nov 12 2002 | ASML NETHERLANDS B V | Lithographic apparatus and device manufacturing method |
7234477, | Jun 30 2000 | Lam Research Corporation | Method and apparatus for drying semiconductor wafer surfaces using a plurality of inlets and outlets held in close proximity to the wafer surfaces |
7358507, | Dec 13 2002 | ASML NETHERLANDS B V | Liquid removal in a method and device for irradiating spots on a layer |
7416281, | Aug 06 2002 | Ricoh Company, LTD | Electrostatic actuator formed by a semiconductor manufacturing process |
7436486, | Dec 10 2002 | Nikon Corporation | Exposure apparatus and device manufacturing method |
20010037819, | |||
20020020821, | |||
DE206607, | |||
DE221563, | |||
JP10255319, | |||
JP200058436, | |||
JP59019912, | |||
JP6124873, | |||
WO9949504, |
Executed on | Assignor | Assignee | Conveyance | Frame | Reel | Doc |
Jul 22 2004 | NEIJZEN, JACOBUS HERMANUS MARIA | KONINKLIJKE PHILIPS ELECTRONICS, N V | ASSIGNMENT OF ASSIGNORS INTEREST SEE DOCUMENT FOR DETAILS | 043066 | /0976 | |
Jul 22 2004 | VAN SANTEN, HELMAR | KONINKLIJKE PHILIPS ELECTRONICS, N V | ASSIGNMENT OF ASSIGNORS INTEREST SEE DOCUMENT FOR DETAILS | 043066 | /0976 | |
Mar 06 2013 | Koninklijke Philips Electronics N V | ASML NETHERLANDS B V | ASSIGNMENT OF ASSIGNORS INTEREST SEE DOCUMENT FOR DETAILS | 043066 | /0997 | |
May 16 2017 | ASML Netherlands B.V. | (assignment on the face of the patent) | / |
Date | Maintenance Fee Events |
Date | Maintenance Schedule |
Apr 13 2024 | 4 years fee payment window open |
Oct 13 2024 | 6 months grace period start (w surcharge) |
Apr 13 2025 | patent expiry (for year 4) |
Apr 13 2027 | 2 years to revive unintentionally abandoned end. (for year 4) |
Apr 13 2028 | 8 years fee payment window open |
Oct 13 2028 | 6 months grace period start (w surcharge) |
Apr 13 2029 | patent expiry (for year 8) |
Apr 13 2031 | 2 years to revive unintentionally abandoned end. (for year 8) |
Apr 13 2032 | 12 years fee payment window open |
Oct 13 2032 | 6 months grace period start (w surcharge) |
Apr 13 2033 | patent expiry (for year 12) |
Apr 13 2035 | 2 years to revive unintentionally abandoned end. (for year 12) |