Organic light emitting display device and method of manufacturing the same

Abstract

A design for an organic light-emitting display device that increases capacitor capacity and increases aperture ratio by forming an initializing voltage electrode on a different layer than an electrode of the capacitor and forming only one via hole for an entire set of three sub-pixels. One of the source electrodes and the drain electrodes of switching transistors for the three sub-pixels are formed in common, along with the gate electrodes of the switching transistors.

Description

wirings wiring formed from the same layer which form forms the drain electrode and a lower electrode of the capacitor Cst, however, although not shown, the present invention is not limited thereto. Alternatively, the first drain electrode DE1, the second drain electrode DE2, and the third drain electrode DE3 may be commonly formed, which may refer to a common drain electrode.

According to the current embodiment of the present invention, an organic light-emitting display device includes just a single via-hole VH is formed to provide electrical connection to the common source electrode SEc to deliver an initializing signal to each of the first through third sub-pixels P1 through P3. Also, a scanning signal that is transmitted to the first through third gate electrodes GE1 through GE3, and thus each of the first through third switching devices TR1 through TR3 are turned on. Then, an initializing signal is applied to the common source electrode SEc and a channel is formed in each of the first through third active layers 131 through 133, and thus the initializing signal may be transmitted to the first through third drain electrodes DE1 through DE3. That is, the first through third switching devices TR1 through TR3 may simultaneously transmit the initializing signal to the first through third sub-pixels P1 through P3 due to the common source electrode SEc.

Referring now to FIG. 6, a gate insulating layer 13 for insulating the active layer 130 from the gate electrode GE layer may be formed between the active layer 130 and the gate electrode GE. Also, and insulating interlayer 15 is formed on the gate electrode GE. The gate insulating layer 13 and the insulating interlayer 15 may be made out of silicon oxide, tantalum oxide, aluminum oxide, or the like, but the present invention is not limited thereto.

Referring now to FIGS. 4 and 6, also, the common contact hole CTc may be formed in the gate insulating layer 13 and in the insulating interlayer 15 to electrically connect the common source electrode SEc to the active layer 130. That is, the common contact hole CTc is formed in portions where the gate insulating layer 13 and the insulating interlayer 15 are partially removed, to expose the active layer 130 in correspondence to an area where the common source electrode SEc is to be formed. Since the common contact hole CTc is related to the common source electrode SEc, just one common contact hole CTc is needed to provide electrical connection from common source electrode SEc to each of first through third sub-pixels P1 through P3.

Referring now to FIG. 4, the first through third drain electrodes DE1 through DE3 may also be electrically connected to the active layer 130. Although not shown in FIG. 4, each of the first through third drain electrodes DE1 through DE3 contacts and is electrically connected to the other active layer 135 that is connected to the first through third active layers 131 through 133, however the present invention is not limited thereto. Each of the first through third drain electrodes DE1 through DE3 may instead contact and be electrically connected to any portion of the active layer 130.

Referring now to FIG. 6, a planarization layer 17 is formed on the first through third switching devices TR1 through TR3. In detail, the planarization layer 17 is formed on each of the first through third drain electrodes DE1 through DE3 and the common source electrode SEc. The planarization layer 17 may be formed to planarize an uneven surface due to the underlying structure, however, the present invention is not limited thereto. A passivation layer for protecting the switching devices may further be formed under the planarization layer 17.

The via-hole VH is formed in the planarization layer 17. The via-hole VH is formed in portions where the planarization layer 17 is partially removed, to expose the common source electrode SEc in correspondence to an area where the common source electrode SEc is arranged. The via-hole VH is arranged at a location that corresponds to the common source electrode SEc, and thus just one via hole VH is needed to provide electrical connection to each of the first through third sub-pixels P1 through P3.

The initializing electrode VLi contacts and is electrically connected to the common source electrode SEc via the via-hole VH. Referring to FIG. 5, the via-hole VH may be formed near the common contact hole CTc. The via-hole VH allows the initializing electrode VLi to electrically connect to the common source electrode SEc, and the common contact hole CTc allows the common source electrode SEc to electrically connect to the active layer 130. That is, the via-hole VH is formed to correspond to the common source electrode SEc. According to the current embodiment of the present invention, the common source electrode SEc is formed to have an island shape, and thus the via-hole VH and the common contact hole CTc are formed close to each other.

Referring now to FIG. 5, the initializing electrode VLi receives an initializing voltage or an initializing signal from the outside and transmits the initializing voltage or the initializing signal to the common source electrode SEc electrically connected thereto. According to the current embodiment of the present invention, the initializing electrode VLi may be formed from the same layer as the pixel electrode PE.

Turning now to FIG. 7, FIG. 7 illustrates FIGS. 1 and 7 illustrate the OLED included in each sub-pixel. The OLED includes the pixel electrode PE formed on the planarization layer 17, the organic light-emitting layer OL formed on the pixel electrode PE, and a counter electrode 200 covering the organic layer OL and formed on the entire sub-pixel. Although not shown in FIG. 7, the OLED is electrically connected to a driving transistor (not shown) included in the sub-pixel. In detail, similar to the first through third switching devices TR1 through TR3, the planarization layer 17 is formed on the driving transistor, and the pixel electrode PE and driving transistor contact each other via a hole formed in the planarization layer 17. After the pixel electrode PE is formed, a pixel-defining layer 19 is formed on at least a part of the pixel electrode PE to expose the at least a part of the pixel electrode PE by a pixel opening OA. The organic light-emitting layer OL is formed on the pixel electrode PE exposed by the pixel opening OA so that the pixel opening OA includes an organic light-emitting layer. As discussed previously in conjunction with FIG. 1, the first through third sub-pixels P1 through P3 may be formed to have different types of organic light-emitting layers. The counter electrode 200 is formed on the organic layer OL and the pixel electrode PE. The counter electrode 200 is formed to entirely cover a layer including the pixel-defining layer 19 and the organic layer OL. Accordingly, if a voltage is applied from the driving transistor to the pixel electrode PE and thus an appropriate voltage condition is formed between the pixel electrode PE and the counter electrode 200, light emission occurs in the OLED.

In a top emission type display, in which an image is displayed toward the counter electrode 200, the pixel electrode PE may be a reflective electrode and the counter electrode 200 may be a light-transmitting type electrode. In this case, the counter electrode 200 may include a semi-transmission reflective layer made out of any one material selected from the group consisting of Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, and Ca and formed to be thin, or may include a light-transmitting metal oxide such as indium tin oxide (ITO), indium zinc oxide (IZO), or zinc oxide (ZnO). In a bottom emission type display, the counter electrode 200 may have a reflection function by being deposited with any one material selected from the group consisting of Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, and Ca.

When the pixel electrode PE is used as an anode, the pixel electrode PE may include a layer made out of a metal oxide having a high work-function (an absolute value), for example, ITO, IZO, or ZnO. When the pixel electrode PE is used as a cathode, the pixel electrode PE may include a highly conductive metal having a low work-function, for example, Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, or Ca. When the pixel electrode PE is used as an anode, the counter electrode 200 may be used as a cathode, or vice-versa.

Also, according to the current embodiment of the present invention, the initializing electrode VLi may be made out of the same material and be arranged on the same layer as the pixel electrode PE. That is, after a metal layer constituting of the pixel electrode PE is formed, the initializing electrode VLi and the pixel electrode PE are patterned at the same time. As illustrated in FIGS. 5 and 6, both the pixel electrode PE and the initializing electrode VLi are formed on the planarization layer 17, and thus both may be formed from the same layer.

First, according to the current embodiment of the present invention, when the initializing electrode VLi and the pixel electrode PE of the OLED are formed from the same layer, a spatial gain is obtained in which the capacitor Cst disposed of a different layer from the pixel electrode PE may be formed to have a high capacity.

When the initializing electrode VLi is formed from the same layer as a gate wiring, a longitudinal length of the sub-pixel is reduced in order to secure a space for the initializing electrode VLi to be disposed in a row direction. The capacitor Cst is formed by using the other gate electrode 150 formed from the same layer as the gate electrode of the sub-pixel as a lower electrode and using a wiring formed from the same layer as the source/drain electrode as an upper electrode. Accordingly, when the longitudinal length of the sub-pixel is reduced in order to secure a space for the initializing electrode VLi, an area of the capacitor Cst is reduced. Consequently, a high resolution pixel may not secure a sufficient charging capacity. However, according to the current embodiment of the present invention, the area of the capacitor Cst is not reduced by forming the initializing electrode VLi from the pixel electrode PE layer.

Turning now to FIG. 8, FIG. 8 is a diagram illustrating an organic light-emitting display device according to a comparative example of the present invention and the organic light-emitting display device illustrated in FIG. 1. Differences between the organic light-emitting display device according to the comparative example of the present invention and the organic light-emitting display device illustrated in FIG. 1 will now be described with reference to FIG. 8.

FIG. 8(a) illustrates the organic light-emitting display device in which first through third switching devices TR1 through TR3 corresponding to each sub-pixel do not have a common source electrode SEc, and thus a via-hole VH is formed for each sub-pixel.

FIG. 8(b) illustrates the organic light-emitting display device illustrated in FIG. 1 in which the common source electrode SEc is formed in common to with the first through third switching devices TR1 through TR3 respectively corresponding to the first through third sub-pixels P1 through P3, and thus a single via-hole VH is formed common to the first through third sub-pixels P1 through P3.

Referring to FIG. 8(b), an area where the via-holes VH of FIG. 8(a) are formed may provide a space where the pixel openings OA may be formed larger. In this regard, the pixel opening OA, as described above, is a portion where the pixel-defining layer 19 is removed from at least a part of an upper portion of the pixel electrode PE to expose at least apart of the pixel electrode PE and where light emission occurs, wherein the pixel opening OA is covered by the organic light-emitting layer OL. Experimentally, aperture ratios of the first and second sub-pixels P1 and P2 of FIG. 8(b) are increased by about 11.7%, compared to those of FIG. 8(a). Also, an aperture ratio of the third sub-pixel P3 of FIG. 8(b) is increased by about 13.5%, compared to that of FIG. 8(a). As such, an organic light-emitting display device designed to increase an aperture ratio has a longer lifespan and an increased image quality.

Also, the organic light-emitting display device according to the embodiment of the present invention is manufactured according to the above-described operations. In short, the substrate 1 is prepared, and the buffer layer 11 is formed on the substrate 1, and then the active layer 130 is formed on the buffer layer 11, as illustrated in FIG. 2. When the active layer 130 is patterned, the first through third active layers 131 through 133 may be connected to one another. Also, the other active layer 135 to be used as a lower electrode of the capacitor Cst may be patterned to be connected to the first through third active layers 131 through 133.

Next, the gate insulating layer 13 is formed on the active layer 130. Then, as illustrated in FIG. 3, the gate electrode GE layer is formed on the gate insulating layer 13 and is then patterned. At this point, the first through third gate electrodes GE1 through GE3 and the gate line GLn-1 may be patterned to be connected to one another.

Next, the insulating interlayer 15 is formed on the gate electrode GE. Then, the common contact hole CTc is formed by partially removing the insulating interlayer 15 and the gate insulating layer 13. Then, as illustrated in FIG. 4, the metal layer is formed thereon and is then patterned to form the source and drain electrodes SE and DE. At this point, the metal layer is patterned to form a wiring corresponding to an upper electrode of capacitor Cst, the common source electrode SEc and the first through third drain electrodes DE1 through DE3. The common source electrode SEc contacts the active layer 130 via the common contact hole CTc.

Next, the planarization layer 17 is formed on the source/drain metal, and the via-hole VH is formed in the planarization layer 17. Then, as illustrated in FIG. 5, a metal pixel electrode PE layer is formed on the planarization layer 17 to form the pixel electrode PE and the initializing electrode VLi by patterning the metal pixel electrode PE layer. In this regard, the initializing electrode VLi contacts the common source electrode SEc via the via-hole VH.

Next, the pixel-defining layer 19 is formed on the pixel electrode PE metal. In this regard, the pixel opening OA is formed in an area of the pixel electrode PE where a light emission unit is to be formed by partially removing the pixel-defining layer 19. The organic light-emitting layer OL is deposited on the pixel electrode PE exposed by the pixel opening OA. Then, the counter electrode 200 is entirely formed on the entireties of the organic light-emitting layer OL and on the pixel-defining layer 19.

Turning now to FIG. 9, FIG. 9 is a circuit diagram illustrating switching devices according to an embodiment of the present invention. Referring to FIG. 9, unlike FIG. 1, only a single via-hole VH is formed to accommodate initializing electrode VLi, and a source terminal of each of first through third switching devices TR1 through TR3 is connected to a common node. Portions illustrated as a resistor R in the common node are portions that are electrically connected to each other by an active layer 130. In FIG. 9, Vi denotes an initializing voltage and Sn-1 denotes an n-1-th scanning signal for turning on each of the first through third switching devices TR1 through TR3.

According to the present invention, when an initializing electrode and a pixel electrode of an OLED are formed from the same layer, a spatial gain is obtained in which a capacitor disposed on a different layer from the pixel electrode may be formed to have a high capacity.

Also, according to the present invention, any one of a drain electrode and a source electrode of switching devices corresponding to each sub-pixel is commonly formed and thus a via-hole is formed common to a plurality of sub-pixels, so that an area where a via-hole is formed in each sub-pixel may provide a space where a pixel opening may be formed larger, thereby increasing an aperture ratio of an organic light-emitting display device.

While the present invention has been particularly shown, and described with reference to exemplary embodiments thereof, it will be understood by those of ordinary skill in the art that various changes in form, and details may be made therein without departing from the spirit, and scope of the present invention as defined by the following claims.

Claims

1. An organic light-emitting display device, comprising:

first through third sub-pixels each comprising at least one capacitor, at least one thin-film transistor (TFT), and an organic light-emitting device (OLED);

first, second and third switching devices including one of a common source electrode and a common drain electrode, the first, second and third switching devices being electrically connected to the first through third sub-pixels, respectively to apply an initializing voltage to the first, second and third sub-pixels when the first, second and third switching devices are turned on;

a planarization layer arranged on the first, second and third switching devices;

a via-hole arranged through the planarization layer to expose the one of a common source electrode and a common drain electrode; and

an initializing electrode electrically connected to the one of a common source electrode and a common drain electrode through the via-hole, the initializing electrode to transmit the initializing voltage to the one of a common source electrode and a common drain electrode.

2. The organic light-emitting display device of claim 1, the organic light-emitting display device is composed of just one via hole to serve first, second and third sub-pixels.

3. The organic light-emitting display device of claim 1, wherein each organic light-emitting device comprises:

a pixel electrode;

a counter electrode; and

an organic layer arranged between the pixel electrode and the counter electrode.

4. The organic light-emitting display device of claim 3, wherein the initializing electrode is comprised of a same material and is arranged on a same layer as the pixel electrode.

5. The organic light-emitting display device of claim 1,

wherein the first switching device comprises:

a first active layer to form a channel,

a first gate electrode insulated from the first active layer,

a first source electrode electrically connected to the first active layer, and

a first drain electrode;

wherein the second switching device comprises:

a second active layer to form a channel,

a second gate electrode insulated from the second active layer,

a second source electrode electrically connected to the second active layer, and

a second drain electrode;

wherein the third switching device comprises:

a third active layer to form a channel,

a third gate electrode insulated from the third active layer,

a third source electrode electrically connected to the third active layer, and

a third drain electrode; and

wherein the first through third source electrodes commonly constitute a common source electrode.

6. The organic light-emitting display device of claim 5, wherein the first, second and third active layers are connected together.

7. The organic light-emitting display device of claim 5, wherein the first, second and third gate electrodes are connected together.

8. The organic light-emitting display device of claim 5, further comprising:

a gate insulating layer arranged between the first, second and third active layers and the first through third gate electrodes;

an insulating interlayer arranged on the first, second and third gate electrodes; and

a common contact hole arranged in the gate insulating layer and in the insulating interlayer to electrically connect the common source electrode to the first, second and third active layers.

9. The organic light-emitting display device of claim 8, the organic light-emitting display device being composed of just one common contact hole to serve the first, second and third sub-pixels.

10. The organic light-emitting display device of claim 8, wherein the common contact hole is arranged near the via-hole.

11. A method of manufacturing an organic light-emitting display device, the method comprising:

defining first through third sub-pixels each comprising at least one capacitor, at least one thin-film transistor (TFT), and an organic light-emitting device (OLED);

forming first through third switching devices electrically connected to first through third sub-pixels, respectively, the first through third switching devices include one of a commonly formed drain electrode or a commonly formed source electrode, the first through third switching devices to apply an initializing voltage to the first through third sub-pixels when the first through third switching devices are turned on;

forming a planarization layer on the first through third switching devices;

forming a via-hole through the planarization layer to expose the one of a commonly formed drain electrode or a commonly formed source electrode; and

forming an initializing electrode electrically connected to the one of a commonly formed drain electrode or a commonly formed source electrode via the via-hole to transmit the initializing voltage to the one of a commonly formed drain electrode or a commonly formed source electrode.

12. The method of claim 11, the organic light-emitting display device is composed of just one via hole to serve first through third sub-pixels.

13. The method of claim 11, wherein each organic light-emitting device comprises:

a pixel electrode;

a counter electrode; and

an organic layer arranged between the pixel electrode and the counter electrode.

14. The method of claim 13, wherein the initializing electrode is comprised of the same material and is arranged on the same layer as the pixel electrode.

15. The method of claim 11, wherein the first switching device is formed by sequentially forming a first active layer to form a channel, a first gate electrode insulated from the first active layer, a first source electrode electrically connected to the first active layer, and a first drain electrode; the second switching device is formed by sequentially forming a second active layer to form a channel, a second gate electrode insulated from the second active layer, a second source electrode electrically connected to the second active layer, and a second drain electrode; the third switching device is formed by sequentially forming a third active layer to form a channel, a third gate electrode insulated from the third active layer, a third source electrode electrically connected to the third active layer, and a third drain electrode; and wherein the first through third source electrodes commonly constitute a common source electrode.

16. The method of claim 15, wherein the first through third active layers are connected together.

17. The method of claim 15, wherein the first through third gate electrodes are connected together.

18. The method of claim 15, further comprising:

forming a gate insulating layer between the first through third active layers and the first through third gate electrodes;

forming an insulating interlayer on the first through third gate electrodes; and

forming a common contact hole in the gate insulating layer and in the insulating interlayer to electrically connect the common source electrode to the first through third active layers.

19. The method of claim 18, the organic light-emitting display device being composed of just one common contact hole to serve the first through third sub-pixels.

20. The method of claim 11, wherein the organic light emitting display device comprises:

the first through third sub-pixels each comprising at least one capacitor, at least one thin-film transistor (TFT), and an organic light-emitting device (OLED);

first through third switching devices including one of the commonly formed source electrode and the commonly formed drain electrode, the first through third switching devices being electrically connected to the first through third sub-pixels, respectively to apply the initializing voltage to the first through third sub-pixels when the first through third switching devices are turned on;

the planarization layer arranged on the first through third switching devices;

the via-hole arranged through the planarization layer to expose the one of the commonly formed source electrode and the commonly formed drain electrode; and

the initializing electrode electrically connected to the one of the commonly formed source electrode and the commonly formed drain electrode through the via-hole, the initializing electrode to transmit the initializing voltage to the one of the commonly formed source electrode and the commonly formed drain electrode.

21. An organic light-emitting display device, comprising:

a plurality of sub-pixels;

a plurality of switching devices comprising a plurality of switching thin-film transistors (TFTs), each of the plurality of switching TFTs being electrically connected to a corresponding one of the plurality of sub-pixels to apply an initializing voltage to the corresponding one of the plurality of sub-pixels in response to the each of the plurality of switching TFTs being turned on, each of the plurality of switching TFTs comprising an active layer and a gate electrode insulated from the active layer, the gate electrodes of the plurality of switching TFTs being connected together, the active layers of the plurality of switching TFTs being connected together, the plurality of switching devices comprising an electrode electrically connected to the active layers and commonly constituting a common source electrode or a common drain electrode for the plurality of switching TFTs;

a planarization layer on the plurality of switching TFTs and comprising a via-hole, the via hole being located between a neighboring two sub-pixels of the plurality of sub-pixels; and

an initializing voltage line on the planarization layer, the initializing voltage line being electrically connected to at least one of the plurality of switching TFTs through the via-hole.

22. The organic light-emitting display device of claim 21, further comprising:

a gate line extending in a first direction.

23. The organic light-emitting display device of claim 22, wherein the initializing voltage line extends along the first direction.

24. The organic light-emitting display device of claim 21, wherein:

each of the plurality of sub-pixels comprises a capacitor and an organic light-emitting device (OLED); and

the OLED comprises a pixel electrode, an organic material layer, and a counter electrode.

25. The organic light-emitting display device of claim 24, wherein the initializing voltage line is comprised of a same material as the pixel electrode.

26. The organic light-emitting display device of claim 21, wherein the common source electrode or the common drain electrode is located between neighboring sub-pixels.

27. The organic light-emitting display device of claim 21, wherein the active layers for the plurality of switching TFTs are connected together.

28. The organic light-emitting display device of claim 21, wherein the gate electrodes for the plurality of switching TFTs are formed as a single body.

29. The organic light-emitting display device of claim 21, further comprising:

a gate insulating layer arranged between the active layers and the gate electrodes for the plurality of switching TFTs;

an insulating interlayer on the gate insulating layer; and

a common contact hole in the gate insulating layer and the insulating interlayer.

30. The organic light-emitting display device of claim 29, wherein the common contact hole is located near the via-hole.

31. An organic light-emitting display device, comprising:

a gate line extending in a first direction;

a plurality of sub-pixels, each of the plurality of sub-pixels comprising a capacitor and an organic light-emitting device (OLED), the OLED comprising a pixel electrode;

a plurality of switching devices comprising a plurality of switching thin-film transistors (TFTs), each of the plurality of switching TFTs being electrically connected to a corresponding one of the plurality of sub-pixels to apply an initializing voltage to the corresponding one of plurality of sub-pixels in response to the each of the plurality of switching TFTs being turned on, each of the plurality of switching TFTs comprising a gate electrode, the gate electrodes of the plurality of TFTs being connected together by the gate line;

a planarization layer on the plurality of switching TFTs and comprising a via-hole, the via hole being located between a neighboring two sub-pixels of the plurality of sub-pixels; and

an initializing voltage line extending in the first direction and being disposed on the planarization layer, the initializing voltage line being electrically connected to at least one of the plurality of switching TFTs through the via-hole,

wherein the pixel electrode of one of the OLEDs overlaps the capacitor of the one of the OLEDs.

32. An organic light-emitting display device, comprising:

a gate line extending in a first direction;

a plurality of sub-pixels, each of the plurality of sub-pixels comprising a capacitor and an organic light-emitting device (OLED);

a plurality of switching thin-film transistors (TFTs) comprising one of a source electrode and a drain electrode, each of the plurality of switching TFTs being electrically connected to a corresponding one of the plurality of sub-pixels, each of the plurality of switching TFTs comprising a gate electrode, the gate electrodes of the plurality of switching TFTs being connected together by the gate line;

an initializing voltage line extending in the first direction and being electrically connected to the one of the source electrode and the drain electrode, the initializing voltage line being configured to transmit the initializing voltage to the one of the source electrode and the drain electrode; and

an insulating layer between the gate electrodes and the initializing voltage line.

33. The organic light-emitting display device of claim 32, wherein each of the OLEDs comprises:

a pixel electrode;

a counter electrode; and

an organic layer arranged between the pixel electrode and the counter electrode.

34. The organic light-emitting display device of claim 33, wherein the initializing voltage line comprises a same material as the pixel electrode.

35. The organic light-emitting display device of claim 33, wherein the pixel electrode of one of the OLEDs overlaps the capacitor.

36. The organic light-emitting display device of claim 32, further comprising:

a single via hole serving the plurality of sub-pixels.

37. The organic light-emitting display device of claim 36, wherein the single via hole is located adjacent a neighboring two sub-pixels.

38. The organic light-emitting display device of claim 32, wherein:

each of the plurality of switching TFTs comprises an active layer, the gate electrode insulated from the active layer, and an electrode electrically connected to the active layer; and

the electrode corresponds to a source electrode or a drain electrode.

39. The organic light-emitting display device of claim 32, wherein:

the capacitor comprises a lower electrode and an upper electrode; and

the lower electrode is formed from a same layer as the gate electrode.

40. An organic light-emitting display device, comprising:

a plurality of sub-pixels, each of the plurality of sub-pixels comprising a capacitor and an organic light-emitting device (OLED);

a plurality of switching thin-film transistors (TFTs) comprising one of a source electrode and a drain electrode, each of the plurality of switching TFTs being electrically connected to a corresponding one of the plurality of sub-pixels, each of the plurality of switching TFTs comprising a gate electrode, the gate electrodes of the plurality of switching TFTs being connected together;

an initializing voltage line electrically connected to the one of the source electrode and the drain electrode, the initializing voltage line being configured to transmit the initializing voltage to the one of the source electrode and the drain electrode;

an insulating layer between the gate electrodes and the initializing voltage line; and

a single via hole serving the plurality of sub-pixels, the single via hole being defined in the insulating layer.

41. An organic light-emitting display device, comprising:

a plurality of sub-pixels, each of the plurality of sub-pixels comprising a capacitor and an organic light-emitting device (OLED);

a plurality of switching thin-film transistors (TFTs) comprising one of a source electrode and a drain electrode, each of the plurality of switching TFTs being electrically connected to a corresponding one of the plurality of sub-pixels, each of the plurality of switching TFTs comprising a gate electrode, the gate electrodes of the plurality of switching TFTs being connected together;

an initializing voltage line electrically connected to the one of the source electrode and the drain electrode, the initializing voltage line being configured to transmit the initializing voltage to the one of the source electrode and the drain electrode; and

an insulating layer between the gate electrodes and the initializing voltage line,

wherein:

each of the plurality of switching TFTs comprises an active layer, the gate electrode insulated from the active layer, and an electrode electrically connected to the active layer;

the electrode corresponds to a source electrode or a drain electrode; and

the electrodes for each of the plurality of switching TFTs commonly constitute a common source electrode or a common drain electrode.

42. An organic light-emitting display device, comprising:

a plurality of sub-pixels, each of the plurality of sub-pixels comprising a capacitor and an organic light-emitting device (OLED);

a plurality of switching thin-film transistors (TFTs) comprising one of a source electrode and a drain electrode, each of the plurality of switching TFTs being electrically connected to a corresponding one of the plurality of sub-pixels, each of the plurality of switching TFTs comprising a gate electrode, the gate electrodes of the plurality of switching TFTs being connected together;

an initializing voltage line electrically connected to the one of the source electrode and the drain electrode, the initializing voltage line being configured to transmit the initializing voltage to the one of the source electrode and the drain electrode; and

an insulating layer between the gate electrodes and the initializing voltage line,

wherein:

each of the plurality of switching TFTs comprises an active layer, the gate electrode insulated from the active layer, and an electrode electrically connected to the active layer;

the electrode corresponds to a source electrode or a drain electrode; and

the active layers for the plurality of switching TFTs are connected together.