Isolation region fabrication for replacement gate processing

Abstract

A semiconductor structure includes a silicon-on-insulator (SOI) substrate, the SOI substrate comprising a bottom silicon layer, a buried oxide (BOX) layer, and a top silicon layer; a plurality of active devices formed on the top silicon layer; and an isolation region located between two of the active devices, wherein at least two of the plurality of active devices are electrically isolated from each other by the isolation region, and wherein the isolation region extends through the top silicon layer to the BOX layer.

Description

CROSS-REFERENCE TO RELATED APPLICATION

This application is is in some embodiments. The semiconductor structure may include any appropriate semiconductor structure that includes dummy gates, including but not limited to a fin field effect transistor (finFET) structure. An embodiment of such a semiconductor structure 200A is shown in FIG. 2A. The substrate is a silicon-on-insulator substrate, including bottom silicon layer 201, buried oxide (BOX) layer 202, and top silicon layer 203. Dummy gates 204 are located on top silicon layer 203. In some embodiments, a gate dielectric layer 207 is formed underneath each dummy gate 204. The dummy gate structure 204 may be polysilicon in some embodiments. The gate dielectric layer 207 may be any appropriate dielectric material, and in some embodiments may include a bottom dielectric layer and a top metal layer. Spacers 205 are formed on either side of the dummy gates 204. FIG. 2B shows a top view of an embodiment of the semiconductor structure 200A of FIG. 2A in which the top silicon layer 203 has been patterned to form fins for finFETs. In the semiconductor structure 200B of FIG. 2B, the dummy gates 204 wrap around and cover the fins that comprise top silicon layer 203. After formation of the dummy gates 204, as shown in FIG. 3, ILD 301 is formed over the dummy gates 204 and spacers 205, and ILD 301 is planarized such that the top surfaces of dummy gates 204 are exposed.

Returning to method 100, in block 102, a block mask is applied to the top surface of the dummy gates and the ILD, and the block mask is patterned to selectively expose the dummy gates that are to become isolation regions. The block mask may comprise, for example, photoresist. FIG. 4 shows an embodiment of the semiconductor structure 200A after application and patterning of photoresist 401 to form the block mask, which exposes a dummy gate 402. Then, turning again to method 100, in block 103, the exposed dummy gate is removed, and the portion of the top silicon layer located underneath the removed dummy gate is etched down to the BOX layer to form an isolation region recess. FIG. 5 shows an embodiment of a device including an isolation region recess 501. The etch used to remove exposed dummy gate 402 and its respective gate dielectric layer 207, and to form the recess 501 in top silicon layer 203, may be a sequential multistage etch. The sequential multistage etch may have 3 or 4 different stages depending on the materials that make up dummy gate 204 and gate dielectric layer 207. In embodiments in which the dummy gate 402 is polysilicon, dummy gate 402 may be removed using a dry etch such as a bromine-based etch. The respective gate dielectric layer 207 may next be removed using a wet etch, such as a hydrofluoric etch for example. In embodiments in which respective gate dielectric layer 207 includes a bottom dielectric layer and a top metal layer, the etch to remove the gate dielectric layer 207 may be a 2-stage etch. Then, the recess 501 may be formed in the top silicon layer 203 using a dry etch such as a bromine-based etch to etch down to BOX layer 202.

Next, in method 100 of FIG. 1, in block 104, the recess that was formed during the etch performed in block 103 is filled with an insulating material to form the isolation region, and the top surface of the insulating material is planarized such as is shown in FIG. 6. In FIG. 6, the recess 501 is filled with an insulator, and the top surface of the insulator is planarized, to form isolation region 601. The insulator that comprises isolation region 601 may include silicon dioxide or silicon nitride in various embodiments. Then, flow of method 100 proceeds to block 105, in which a hardmask layer is formed over the isolation region and the photoresist is removed. FIG. 7 shows an embodiment of a hardmask layer 701 formed over the isolation region 601. The hardmask layer 701 may be silicon nitride. The photoresist 401 is also removed to expose the top surfaces of the remaining dummy gates 204.

Lastly, in block 106 of method 100 of FIG. 1, replacement gate processing is performed on the remaining dummy gates, resulting in an IC device including electrical devices separated by isolation regions. An example of an IC device 800 including an isolation region 601 between two active devices is shown in FIG. 7 8. Dummy gates 204 have been replaced with gate stacks 801 to form active FETs 802, including gate stacks 801, gate dielectric layer 207, spacers 205, and source/drain and channel regions located underneath the devices in the top silicon layer 203. The active FETs 802 may include raised source/drain regions (not shown) located under the spacers 205 in some embodiments. The active FETs 802 are separated by the isolation region 601, which extends down to BOX layer 202, preventing electrical leakage between active FETs 802. The hardmask layer 701 acts to protect the isolation region 601 during the replacement gate processing. The hardmask layer 701 may be left on the device 800 in some embodiments, or in other embodiments the hardmask layer 701 may be removed after replacement gate processing is completed. FIGS. 2A-8 are shown for illustrative purposes only; a device formed using method 100 may include any appropriate number, type, and layout of FETs separated by any appropriate number and layout of isolation regions. For example, in some embodiments, two active devices in a semiconductor structure may have two isolation regions located between the two active devices. Also, in some embodiments, the gate dielectric layer that is initially formed underneath the dummy gate may be replaced during the replacement gate processing. The finished active devices may comprise finFETs in some embodiments, or any other appropriate type of active device that may be formed by replacement gate processing in other embodiments.

The technical effects and benefits of exemplary embodiments include formation of an IC having relatively high device density and low capacitance through replacement gate processing.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the singular forms “a”, “an”, and “the” are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms “comprises” and/or “comprising,” when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.

The corresponding structures, materials, acts, and equivalents of all means or step plus function elements in the claims below are intended to include any structure, material, or act for performing the function in combination with other claimed elements as specifically claimed. The description of the present invention has been presented for purposes of illustration and description, but is not intended to be exhaustive or limited to the invention in the form disclosed. Many modifications and variations will be apparent to those of ordinary skill in the art without departing from the scope and spirit of the invention. The embodiment was chosen and described in order to best explain the principles of the invention and the practical application, and to enable others of ordinary skill in the art to understand the invention for various embodiments with various modifications as are suited to the particular use contemplated.

Claims

1. A semiconductor structure, comprising:

a silicon-on-insulator (SOI) substrate, the SOI substrate comprising a bottom silicon layer, a buried oxide (BOX) layer, and a top silicon layer;

a plurality of active devices formed on the top silicon layer; and

an isolation region located between two of the plurality of active devices, wherein at least two of the plurality of active devices are electrically isolated from each other by the isolation region, wherein the isolation region extends through the top silicon layer to the BOX layer, wherein the isolation region further extends between a pair of spacers that are located on the top silicon layer on either side of the isolation region, and wherein the isolation region further extends through an interlevel dielectric (ILD) layer that is located over the pair of spacers.

2. The semiconductor structure of claim 1, further comprising a hardmask layer located over the isolation region.

3. The semiconductor structure of claim 2, wherein the hardmask layer comprises silicon nitride.

4. A semiconductor device comprising:

a substrate including a top silicon layer that includes a fin;

a first gate structure disposed on the fin;

a second gate structure disposed on the fin;

an isolation region disposed between the first gate structure and the second gate structure, and electrically isolating the first gate structure from the second gate structure;

a first region disposed on a first side of the isolation region and disposed on the substrate;

a second region disposed on a second side of the isolation region and disposed on the substrate;

a third region including an interlevel dielectric (ILD) layer and including a first portion disposed on the first region and a second portion disposed on the second region; and

a silicon nitride layer disposed on the first region and the second region,

wherein the isolation region extends between the first region and the second region, and extends through the third region,

the isolation region extends from above a top of the fin to a bottom of the fin,

the fin extends in a first horizontal direction and at least the first gate structure extends in a second horizontal direction perpendicular to the first horizontal direction, and

wherein a top surface of the first gate structure is at substantially the same level as a top surface of the isolation region.

5. The semiconductor device of claim 4, wherein the third region includes a third portion disposed on the first gate structure and a fourth portion disposed on the second gate structure.

6. The semiconductor device of claim 4, wherein the silicon nitride layer is disposed on the isolation region.

7. The semiconductor device of claim 4, wherein the silicon nitride layer is disposed on the third region.

8. The semiconductor device of claim 4, wherein the isolation region extends through the third region in a direction that is substantially parallel with respect to a top surface of the substrate.

9. The semiconductor device of claim 4, wherein the isolation region extends through the third region in a direction that is substantially perpendicular with respect to a top surface of the substrate.

10. The semiconductor device of claim 4, wherein the third region is disposed on a sidewall of the first region and on a sidewall of the second region.

11. The semiconductor device of claim 4, wherein the third region is disposed on a top surface of the first region and on a top surface of the second region.

12. The semiconductor device of claim 4, wherein the isolation region contacts the third region.

13. The semiconductor device of claim 4, wherein the isolation region contacts the silicon nitride layer.

14. A semiconductor device comprising:

a substrate including a top silicon layer that includes a fin;

a first gate structure disposed on the fin;

a second gate structure disposed on the fin;

an isolation region disposed between the first gate structure and the second gate structure, and electrically isolating the first gate structure from the second gate structure;

a first region disposed on a first side of the isolation region and disposed on the substrate;

a second region disposed on a second side of the isolation region and disposed on the substrate;

a third region including a first portion disposed on the first region and a second portion disposed on the second region;

a silicon nitride layer disposed on the first region and the second region, disposed on the isolation region above the isolation region to vertically overlap the isolation region, and disposed adjacent to the third region;

a first channel disposed below the first gate structure; and

a second channel disposed below the second gate structure,

wherein the isolation region extends between the first region and the second region, and extends through the third region that is disposed on the first region and the second region.